KR100940352B1 - 서로 다른 두께의 게이트 절연층들을 갖는 트랜지스터의 제조 방법 - Google Patents

서로 다른 두께의 게이트 절연층들을 갖는 트랜지스터의 제조 방법 Download PDF

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Publication number
KR100940352B1
KR100940352B1 KR1020047018365A KR20047018365A KR100940352B1 KR 100940352 B1 KR100940352 B1 KR 100940352B1 KR 1020047018365 A KR1020047018365 A KR 1020047018365A KR 20047018365 A KR20047018365 A KR 20047018365A KR 100940352 B1 KR100940352 B1 KR 100940352B1
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South Korea
Prior art keywords
substrate
gate insulating
material layer
insulating layers
sacrificial material
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Expired - Fee Related
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KR1020047018365A
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English (en)
Korean (ko)
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KR20040106546A (ko
Inventor
불러제임스에프.
치코존디.
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication of KR20040106546A publication Critical patent/KR20040106546A/ko
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Publication of KR100940352B1 publication Critical patent/KR100940352B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
KR1020047018365A 2002-05-14 2002-12-17 서로 다른 두께의 게이트 절연층들을 갖는 트랜지스터의 제조 방법 Expired - Fee Related KR100940352B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/145,519 US6541321B1 (en) 2002-05-14 2002-05-14 Method of making transistors with gate insulation layers of differing thickness
US10/145,519 2002-05-14
PCT/US2002/040500 WO2003098685A1 (en) 2002-05-14 2002-12-17 Method of making transistors with gate insulation layers of differing thickness

Publications (2)

Publication Number Publication Date
KR20040106546A KR20040106546A (ko) 2004-12-17
KR100940352B1 true KR100940352B1 (ko) 2010-02-04

Family

ID=22513473

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047018365A Expired - Fee Related KR100940352B1 (ko) 2002-05-14 2002-12-17 서로 다른 두께의 게이트 절연층들을 갖는 트랜지스터의 제조 방법

Country Status (7)

Country Link
US (1) US6541321B1 (enExample)
EP (1) EP1504470A1 (enExample)
JP (1) JP2005526399A (enExample)
KR (1) KR100940352B1 (enExample)
CN (1) CN1310314C (enExample)
AU (1) AU2002353166A1 (enExample)
WO (1) WO2003098685A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004519090A (ja) * 2000-08-07 2004-06-24 アンバーウェーブ システムズ コーポレイション 歪み表面チャネル及び歪み埋め込みチャネルｍｏｓｆｅｔ素子のゲート技術
WO2002103760A2 (en) * 2001-06-14 2002-12-27 Amberware Systems Corporation Method of selective removal of sige alloys
KR20040077900A (ko) * 2002-02-01 2004-09-07 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 고품질 산화물층 형성 방법 및 비휘발성 메모리 소자
US6879007B2 (en) * 2002-08-08 2005-04-12 Sharp Kabushiki Kaisha Low volt/high volt transistor
CN100521071C (zh) * 2003-07-11 2009-07-29 Nxp股份有限公司 一种半导体器件的制造方法及在这种方法中使用的装置
DE602004024071D1 (de) * 2003-07-11 2009-12-24 Nxp Bv Verfahren für das herstellen eines halbleiterbauelements
US20050112824A1 (en) * 2003-11-26 2005-05-26 Yu-Chang Jong Method of forming gate oxide layers with multiple thicknesses on substrate
JP4040602B2 (ja) * 2004-05-14 2008-01-30 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2006344634A (ja) * 2005-06-07 2006-12-21 Renesas Technology Corp Ｃｍｏｓ型半導体装置の製造方法および、ｃｍｏｓ型半導体装置
US7410874B2 (en) * 2006-07-05 2008-08-12 Chartered Semiconductor Manufacturing, Ltd. Method of integrating triple gate oxide thickness
KR100853796B1 (ko) * 2007-06-07 2008-08-25 주식회사 동부하이텍 반도체 소자의 제조 방법
US20090065820A1 (en) * 2007-09-06 2009-03-12 Lu-Yang Kao Method and structure for simultaneously fabricating selective film and spacer
US8232605B2 (en) * 2008-12-17 2012-07-31 United Microelectronics Corp. Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor device
US8828834B2 (en) 2012-06-12 2014-09-09 Globalfoundries Inc. Methods of tailoring work function of semiconductor devices with high-k/metal layer gate structures by performing a fluorine implant process
US8975143B2 (en) 2013-04-29 2015-03-10 Freescale Semiconductor, Inc. Selective gate oxide properties adjustment using fluorine
US9263270B2 (en) 2013-06-06 2016-02-16 Globalfoundries Inc. Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5918116A (en) * 1994-11-30 1999-06-29 Lucent Technologies Inc. Process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US6251747B1 (en) * 1999-11-02 2001-06-26 Philips Semiconductors, Inc. Use of an insulating spacer to prevent threshold voltage roll-off in narrow devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0136935B1 (ko) * 1994-04-21 1998-04-24 문정환 메모리 소자의 제조방법
JP3194370B2 (ja) * 1998-05-11 2001-07-30 日本電気株式会社 半導体装置とその製造方法
JP2000003965A (ja) * 1998-06-15 2000-01-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6335262B1 (en) * 1999-01-14 2002-01-01 International Business Machines Corporation Method for fabricating different gate oxide thicknesses within the same chip

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5918116A (en) * 1994-11-30 1999-06-29 Lucent Technologies Inc. Process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US6251747B1 (en) * 1999-11-02 2001-06-26 Philips Semiconductors, Inc. Use of an insulating spacer to prevent threshold voltage roll-off in narrow devices

Also Published As

Publication number Publication date
KR20040106546A (ko) 2004-12-17
CN1310314C (zh) 2007-04-11
JP2005526399A (ja) 2005-09-02
WO2003098685A1 (en) 2003-11-27
CN1625803A (zh) 2005-06-08
EP1504470A1 (en) 2005-02-09
AU2002353166A1 (en) 2003-12-02
US6541321B1 (en) 2003-04-01

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