KR100931617B1 - 포지티브 레지스트 조성물 - Google Patents

포지티브 레지스트 조성물 Download PDF

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Publication number
KR100931617B1
KR100931617B1 KR1020020057202A KR20020057202A KR100931617B1 KR 100931617 B1 KR100931617 B1 KR 100931617B1 KR 1020020057202 A KR1020020057202 A KR 1020020057202A KR 20020057202 A KR20020057202 A KR 20020057202A KR 100931617 B1 KR100931617 B1 KR 100931617B1
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KR
South Korea
Prior art keywords
group
resin
acid
component
positive resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020020057202A
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English (en)
Korean (ko)
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KR20030051186A (ko
Inventor
후지모리토루
카와베야스마사
Original Assignee
후지필름 가부시키가이샤
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Publication of KR20030051186A publication Critical patent/KR20030051186A/ko
Application granted granted Critical
Publication of KR100931617B1 publication Critical patent/KR100931617B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020020057202A 2001-09-19 2002-09-19 포지티브 레지스트 조성물 Expired - Fee Related KR100931617B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001285180 2001-09-19
JPJP-P-2001-00285180 2001-09-19
JPJP-P-2002-00000563 2002-01-07
JP2002000563A JP4025074B2 (ja) 2001-09-19 2002-01-07 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR20030051186A KR20030051186A (ko) 2003-06-25
KR100931617B1 true KR100931617B1 (ko) 2009-12-14

Family

ID=26622506

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020057202A Expired - Fee Related KR100931617B1 (ko) 2001-09-19 2002-09-19 포지티브 레지스트 조성물

Country Status (6)

Country Link
US (1) US7255971B2 (enrdf_load_stackoverflow)
EP (1) EP1296190B1 (enrdf_load_stackoverflow)
JP (1) JP4025074B2 (enrdf_load_stackoverflow)
KR (1) KR100931617B1 (enrdf_load_stackoverflow)
DE (1) DE60236243D1 (enrdf_load_stackoverflow)
TW (1) TWI273346B (enrdf_load_stackoverflow)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3827290B2 (ja) 2001-10-03 2006-09-27 富士写真フイルム株式会社 ポジ型感光性組成物
JP4025075B2 (ja) * 2002-01-10 2007-12-19 富士フイルム株式会社 ポジ型感光性組成物
US7214465B2 (en) * 2002-01-10 2007-05-08 Fujifilm Corporation Positive photosensitive composition
TWI307819B (en) * 2002-05-28 2009-03-21 Arch Spec Chem Inc Acetal protected polymers and photoresist compositions thereof
US7214467B2 (en) * 2002-06-07 2007-05-08 Fujifilm Corporation Photosensitive resin composition
CN1732408B (zh) * 2002-12-28 2010-04-21 Jsr株式会社 辐射敏感性树脂组合物
JP4115322B2 (ja) * 2003-03-31 2008-07-09 富士フイルム株式会社 ポジ型レジスト組成物
JP4530751B2 (ja) * 2003-07-24 2010-08-25 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
US7867697B2 (en) 2003-07-24 2011-01-11 Fujifilm Corporation Positive photosensitive composition and method of forming resist pattern
JP4092571B2 (ja) * 2003-08-05 2008-05-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
JP4033826B2 (ja) * 2003-10-14 2008-01-16 ダイセル化学工業株式会社 フォトレジスト用樹脂及びフォトレジスト用樹脂組成物
JP4347110B2 (ja) * 2003-10-22 2009-10-21 東京応化工業株式会社 電子線又はｅｕｖ用ポジ型レジスト組成物
US7122291B2 (en) * 2004-08-02 2006-10-17 Az Electronic Materials Usa Corp. Photoresist compositions
US7622240B2 (en) 2005-02-28 2009-11-24 International Business Machines Corporation Low blur molecular resist
JP2009029848A (ja) * 2007-07-24 2009-02-12 Mitsubishi Rayon Co Ltd 重合体及びその製造方法、レジスト組成物及びパターンが形成された基板の製造方法
JP5806800B2 (ja) 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5841707B2 (ja) * 2008-09-05 2016-01-13 富士フイルム株式会社 ポジ型レジスト組成物、該組成物を用いたパターン形成方法及び該組成物に用いられる樹脂
JP5548416B2 (ja) * 2008-09-29 2014-07-16 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5537920B2 (ja) * 2009-03-26 2014-07-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法
JP5448651B2 (ja) * 2009-08-31 2014-03-19 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP5639772B2 (ja) 2010-03-10 2014-12-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いたレジスト膜及びパターン形成方法
JP5560854B2 (ja) * 2010-03-31 2014-07-30 Ｊｓｒ株式会社 感放射線性樹脂組成物およびそれに用いる重合体
JP6144005B2 (ja) * 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
JP5780222B2 (ja) * 2011-09-16 2015-09-16 信越化学工業株式会社 パターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0520654A1 (en) * 1991-06-21 1992-12-30 Hoechst Celanese Corporation Deep UV light sensitive positive photoresist compositions
KR19980078080A (ko) * 1996-04-25 1998-11-16 무네유키 마사유키 포지티브형 광감성 조성물
KR100228467B1 (ko) * 1996-04-02 1999-11-01 카나가와 치히로 화학 증폭 포지형 레지스트 재료
KR20000076585A (ko) * 1999-02-02 2000-12-26 미우라 아끼라 방사선 민감성 수지 조성물
KR20010053380A (ko) * 1998-07-03 2001-06-25 가네꼬 히사시 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법

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JPH05173333A (ja) 1991-12-20 1993-07-13 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JPH0950126A (ja) * 1995-08-08 1997-02-18 Fujitsu Ltd レジスト組成物及びレジストパターン形成方法
TW448344B (en) * 1995-10-09 2001-08-01 Shinetsu Chemical Co Chemically amplified positive resist composition
JP3591672B2 (ja) 1996-02-05 2004-11-24 富士写真フイルム株式会社 ポジ型感光性組成物
JP3570477B2 (ja) 1997-01-24 2004-09-29 信越化学工業株式会社 高分子化合物及び化学増幅ポジ型レジスト材料
KR100538968B1 (ko) * 1997-02-18 2006-07-11 후지 샤신 필름 가부시기가이샤 포지티브감광성조성물
US6037098A (en) 1997-03-31 2000-03-14 Fuji Photo Film Co., Ltd. Positive photosensitive composition
KR100574257B1 (ko) * 1998-07-27 2006-04-27 후지 샤신 필름 가부시기가이샤 포지티브 감광성 조성물
JP3991466B2 (ja) 1998-08-21 2007-10-17 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4480835B2 (ja) 1999-02-12 2010-06-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポジ型感放射線性樹脂組成物
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP2001083709A (ja) 1999-09-09 2001-03-30 Fuji Photo Film Co Ltd ポジ型感放射線性樹脂組成物
JP3755571B2 (ja) 1999-11-12 2006-03-15 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP3963624B2 (ja) * 1999-12-22 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP2001215704A (ja) 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
KR100585365B1 (ko) * 2000-04-13 2006-06-01 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0520654A1 (en) * 1991-06-21 1992-12-30 Hoechst Celanese Corporation Deep UV light sensitive positive photoresist compositions
KR100228467B1 (ko) * 1996-04-02 1999-11-01 카나가와 치히로 화학 증폭 포지형 레지스트 재료
KR19980078080A (ko) * 1996-04-25 1998-11-16 무네유키 마사유키 포지티브형 광감성 조성물
KR20010053380A (ko) * 1998-07-03 2001-06-25 가네꼬 히사시 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
KR20000076585A (ko) * 1999-02-02 2000-12-26 미우라 아끼라 방사선 민감성 수지 조성물

Also Published As

Publication number Publication date
DE60236243D1 (de) 2010-06-17
JP4025074B2 (ja) 2007-12-19
TWI273346B (en) 2007-02-11
US7255971B2 (en) 2007-08-14
EP1296190B1 (en) 2010-05-05
US20030134225A1 (en) 2003-07-17
JP2003167333A (ja) 2003-06-13
KR20030051186A (ko) 2003-06-25
EP1296190A1 (en) 2003-03-26

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