KR100895032B1 - 스핀 헤드 - Google Patents
스핀 헤드 Download PDFInfo
- Publication number
- KR100895032B1 KR100895032B1 KR1020070079570A KR20070079570A KR100895032B1 KR 100895032 B1 KR100895032 B1 KR 100895032B1 KR 1020070079570 A KR1020070079570 A KR 1020070079570A KR 20070079570 A KR20070079570 A KR 20070079570A KR 100895032 B1 KR100895032 B1 KR 100895032B1
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- South Korea
- Prior art keywords
- suction pipe
- fume
- rotating shaft
- substrate
- back nozzle
- Prior art date
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- 239000003517 fume Substances 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 238000005507 spraying Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Abstract
Description
Claims (8)
- 삭제
- 삭제
- 회전 가능한 몸체;상기 몸체의 상부에 구비되어 기판을 지지하는 척킹핀;중공형의 형상을 갖고, 상기 몸체와 결합하여 상기 몸체를 회전시키는 회전축;상기 회전축 내부에 구비되고, 상기 척킹핀이 지지하는 기판의 후면에 처리액을 분사하는 백노즐; 및상기 회전축 내부에 구비되어 상기 처리액으로부터 발생된 흄을 흡입하여 외부로 배출하는 흡입관을 포함하고,상기 흡입관은,상기 몸체의 표면으로부터 돌출되고 측부에 개구부가 형성되어 상기 개구부를 통해 상기 흄을 흡입하는 돌출부; 및상기 돌출부의 상부에 구비되어 상기 백노즐로부터 분사된 상기 처리액이 상기 흡입관으로 유입되는 것을 방지하는 덮개부를 포함하는 것을 특징으로 하는 스핀 헤드.
- 회전 가능한 몸체;상기 몸체의 상부에 구비되어 기판을 지지하는 척킹핀;중공형의 형상을 갖고, 상기 몸체와 결합하여 상기 몸체를 회전시키는 회전축;상기 회전축 내부에 구비되어 상기 척킹핀이 지지하는 기판의 후면에 처리액을 분사하는 백노즐; 및상기 회전축 내부에 구비되어 상기 처리액으로부터 발생된 흄을 흡입하여 외부로 배출하는 흡입관을 포함하고,상기 흡입관은 상기 몸체의 회전 중심에 인접하여 구비되며,상기 백노즐은 상기 흡입관의 주변에 위치하되, 상기 백노즐과 상기 몸체의 회전 중심과의 이격거리는 상기 흡입관과 상기 몸체의 회전 중심과의 이격거리 보다 큰 것을 특징으로 하는 스핀 헤드.
- 제 4 항에 있어서, 상기 회전축에 상기 백노즐이 복수개 구비되고, 상기 백노즐은 상기 흡입관 둘레에 배치되는 것을 특징으로 하는 스핀 헤드.
- 제3항 내지 제5항 중 어느 한 항에 있어서, 상기 처리액은 식각액인 것을 특징으로 하는 스핀 헤드.
- 회전 가능한 몸체;상기 몸체의 상부에 구비되어 기판을 지지하는 척킹핀;상기 몸체에 설치되고, 상기 척킹핀이 지지하는 기판의 후면에 처리액을 분사하는 백노즐; 및상기 몸체에 설치되고, 상기 백노즐과 별개로 구비되며, 상기 처리액으로부터 발생된 흄을 흡입하여 외부로 배출하는 흡입관을 포함하는 것을 특징으로 하는 스핀 헤드.
- 제 7 항에 있어서, 상기 흡입관은,상기 몸체의 상면보다 돌출되어 위치하고, 측부에 상기 흄이 유입되는 개구부가 형성된 돌출부를 포함하는 것을 특징으로 하는 스핀 헤드.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070079570A KR100895032B1 (ko) | 2007-08-08 | 2007-08-08 | 스핀 헤드 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070079570A KR100895032B1 (ko) | 2007-08-08 | 2007-08-08 | 스핀 헤드 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090015332A KR20090015332A (ko) | 2009-02-12 |
KR100895032B1 true KR100895032B1 (ko) | 2009-04-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070079570A KR100895032B1 (ko) | 2007-08-08 | 2007-08-08 | 스핀 헤드 |
Country Status (1)
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KR (1) | KR100895032B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150047206A (ko) | 2013-10-24 | 2015-05-04 | 세메스 주식회사 | 기판 처리 장치 |
CN106816399A (zh) * | 2015-11-30 | 2017-06-09 | 细美事有限公司 | 基板处理装置及方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101038234B1 (ko) | 2009-02-24 | 2011-06-01 | 삼성전기주식회사 | 전자기 밴드갭 구조를 이용한 emi 노이즈 저감 기판 |
KR101853404B1 (ko) * | 2012-06-14 | 2018-06-20 | 주식회사 탑 엔지니어링 | 흄 배기장치 및 이를 갖는 기판식각장치 |
KR102245294B1 (ko) | 2019-06-21 | 2021-04-28 | 세메스 주식회사 | 기판 지지 유닛 및 이를 갖는 기판 처리 장치 |
KR102406089B1 (ko) * | 2020-05-28 | 2022-06-10 | 엘에스이 주식회사 | 백노즐 이물질 제거장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001358109A (ja) | 2000-06-14 | 2001-12-26 | Semiconductor Leading Edge Technologies Inc | 枚葉式洗浄装置、及びウェハ洗浄方法。 |
KR20060124314A (ko) * | 2005-05-31 | 2006-12-05 | 삼성전자주식회사 | 퓸 배기 다중 통로를 구비한 베벨 식각 공정 장비 |
KR20070073500A (ko) * | 2006-01-05 | 2007-07-10 | 삼성전자주식회사 | 반도체 웨이퍼의 약액 처리 장치 |
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2007
- 2007-08-08 KR KR1020070079570A patent/KR100895032B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001358109A (ja) | 2000-06-14 | 2001-12-26 | Semiconductor Leading Edge Technologies Inc | 枚葉式洗浄装置、及びウェハ洗浄方法。 |
KR20060124314A (ko) * | 2005-05-31 | 2006-12-05 | 삼성전자주식회사 | 퓸 배기 다중 통로를 구비한 베벨 식각 공정 장비 |
KR20070073500A (ko) * | 2006-01-05 | 2007-07-10 | 삼성전자주식회사 | 반도체 웨이퍼의 약액 처리 장치 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150047206A (ko) | 2013-10-24 | 2015-05-04 | 세메스 주식회사 | 기판 처리 장치 |
CN106816399A (zh) * | 2015-11-30 | 2017-06-09 | 细美事有限公司 | 基板处理装置及方法 |
US10032657B2 (en) | 2015-11-30 | 2018-07-24 | Semes Co., Ltd. | Apparatus and method for treating a substrate |
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Publication number | Publication date |
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KR20090015332A (ko) | 2009-02-12 |
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