KR20090015332A - 스핀 헤드 - Google Patents
스핀 헤드 Download PDFInfo
- Publication number
- KR20090015332A KR20090015332A KR1020070079570A KR20070079570A KR20090015332A KR 20090015332 A KR20090015332 A KR 20090015332A KR 1020070079570 A KR1020070079570 A KR 1020070079570A KR 20070079570 A KR20070079570 A KR 20070079570A KR 20090015332 A KR20090015332 A KR 20090015332A
- Authority
- KR
- South Korea
- Prior art keywords
- suction pipe
- spin head
- substrate
- fume
- nozzle
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000003517 fume Substances 0.000 claims abstract description 27
- 239000007788 liquid Substances 0.000 claims description 12
- 238000003672 processing method Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims 1
- 230000035515 penetration Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 27
- 239000010409 thin film Substances 0.000 description 8
- 238000000059 patterning Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Abstract
Description
Claims (8)
- 회전 가능한 몸체;상기 몸체의 상부에 구비되어 기판을 지지하는 척킹핀;중공형의 형상을 갖고, 상기 몸체와 결합하여 상기 몸체를 회전시키는 회전축;상기 회전축 내부에 구비되어 상기 기판의 후면에 처리액을 분사하는 백노즐; 및상기 회전축 내부에 구비되어 상기 처리액으로부터 발생된 흄을 흡입하여 외부로 배출하는 흡입관을 포함하는 것을 특징으로 하는 스핀 헤드.
- 제 1 항에 있어서, 상기 흡입관은,상기 몸체의 표면으로부터 돌출되고, 측부에 개구부가 형성되어 상기 개구부를 통해 상기 흄을 흡입하는 돌출부를 포함하는 것을 특징으로 하는 스핀 헤드.
- 제 2 항에 있어서, 상기 흡입관은,상기 돌출부의 상부에 구비되어 상기 백노즐로부터 분사된 상기 처리액이 상기 흡입관으로 유입되는 것을 방지하는 덮개부를 더 포함하는 것을 특징으로 하는 스핀 헤드.
- 제 1 항에 있어서, 상기 흡입관은 상기 몸체의 회전 중심에 인접하여 구비되고, 상기 백노즐은 상기 흡입관의 주변에 위치하되, 상기 백노즐과 상기 몸체의 회전 중심과의 이격거리는 상기 흡입관과 상기 몸체의 회전 중심과의 이격거리 보다 큰 것을 특징으로 하는 스핀 헤드.
- 제 4 항에 있어서, 상기 회전축에 상기 백노즐이 복수개 구비되고, 상기 백노즐은 상기 흡입관 둘레에 배치되는 것을 특징으로 하는 스핀 헤드.
- 제 1 항에 있어서, 상기 처리액은 식각액인 것을 특징으로 하는 스핀 헤드.
- 스핀 헤드에 놓여진 기판의 후면으로 처리액을 공급하고, 상기 처리액으로부터 발생된 흄을 상기 스핀 헤드에 제공된 흡입관을 이용하여 강제 흡입하는 것을 특징으로 하는 기판 처리 방법.
- 제 7 항에 있어서, 상기 강제 흡입은 상기 기판에 상기 처리액이 공급이 완료된 후에 이루어지는 것을 특징으로 하는 기판 처리 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070079570A KR100895032B1 (ko) | 2007-08-08 | 2007-08-08 | 스핀 헤드 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070079570A KR100895032B1 (ko) | 2007-08-08 | 2007-08-08 | 스핀 헤드 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090015332A true KR20090015332A (ko) | 2009-02-12 |
KR100895032B1 KR100895032B1 (ko) | 2009-04-24 |
Family
ID=40684912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070079570A KR100895032B1 (ko) | 2007-08-08 | 2007-08-08 | 스핀 헤드 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100895032B1 (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009046926A1 (de) | 2009-02-24 | 2011-05-12 | Samsung Electro - Mechanics Co., Ltd., Suwon | Platine mit elektromagnetischer Bandgap-Struktur zur Verminderung des Rauschens durch elektromagnetische Interferenz |
KR20130140473A (ko) * | 2012-06-14 | 2013-12-24 | 주식회사 탑 엔지니어링 | 흄 배기장치 및 이를 갖는 기판식각장치 |
US10032657B2 (en) | 2015-11-30 | 2018-07-24 | Semes Co., Ltd. | Apparatus and method for treating a substrate |
KR20210147320A (ko) * | 2020-05-28 | 2021-12-07 | 무진전자 주식회사 | 백노즐 이물질 제거장치 |
US11721575B2 (en) | 2019-06-21 | 2023-08-08 | Semes Co., Ltd. | Substrate support unit and substrate treating apparatus having the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102188352B1 (ko) | 2013-10-24 | 2020-12-08 | 세메스 주식회사 | 기판 처리 장치 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001358109A (ja) | 2000-06-14 | 2001-12-26 | Semiconductor Leading Edge Technologies Inc | 枚葉式洗浄装置、及びウェハ洗浄方法。 |
KR20060124314A (ko) * | 2005-05-31 | 2006-12-05 | 삼성전자주식회사 | 퓸 배기 다중 통로를 구비한 베벨 식각 공정 장비 |
KR20070073500A (ko) * | 2006-01-05 | 2007-07-10 | 삼성전자주식회사 | 반도체 웨이퍼의 약액 처리 장치 |
-
2007
- 2007-08-08 KR KR1020070079570A patent/KR100895032B1/ko active IP Right Grant
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009046926A1 (de) | 2009-02-24 | 2011-05-12 | Samsung Electro - Mechanics Co., Ltd., Suwon | Platine mit elektromagnetischer Bandgap-Struktur zur Verminderung des Rauschens durch elektromagnetische Interferenz |
KR20130140473A (ko) * | 2012-06-14 | 2013-12-24 | 주식회사 탑 엔지니어링 | 흄 배기장치 및 이를 갖는 기판식각장치 |
US10032657B2 (en) | 2015-11-30 | 2018-07-24 | Semes Co., Ltd. | Apparatus and method for treating a substrate |
US11721575B2 (en) | 2019-06-21 | 2023-08-08 | Semes Co., Ltd. | Substrate support unit and substrate treating apparatus having the same |
KR20210147320A (ko) * | 2020-05-28 | 2021-12-07 | 무진전자 주식회사 | 백노즐 이물질 제거장치 |
Also Published As
Publication number | Publication date |
---|---|
KR100895032B1 (ko) | 2009-04-24 |
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