KR100877663B1 - 레지스트 재료 및 패턴 형성 방법 - Google Patents

레지스트 재료 및 패턴 형성 방법 Download PDF

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Publication number
KR100877663B1
KR100877663B1 KR1020020083957A KR20020083957A KR100877663B1 KR 100877663 B1 KR100877663 B1 KR 100877663B1 KR 1020020083957 A KR1020020083957 A KR 1020020083957A KR 20020083957 A KR20020083957 A KR 20020083957A KR 100877663 B1 KR100877663 B1 KR 100877663B1
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KR
South Korea
Prior art keywords
group
resist material
compound
formula
acid
Prior art date
Application number
KR1020020083957A
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English (en)
Korean (ko)
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KR20030076207A (ko
Inventor
히데또 가또
요시노리 히라노
도시히꼬 후지이
히로마사 야마구찌
Original Assignee
신에쓰 가가꾸 고교 가부시끼가이샤
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Publication of KR20030076207A publication Critical patent/KR20030076207A/ko
Application granted granted Critical
Publication of KR100877663B1 publication Critical patent/KR100877663B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
KR1020020083957A 2001-12-27 2002-12-26 레지스트 재료 및 패턴 형성 방법 KR100877663B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00396234 2001-12-27
JP2001396234 2001-12-27

Publications (2)

Publication Number Publication Date
KR20030076207A KR20030076207A (ko) 2003-09-26
KR100877663B1 true KR100877663B1 (ko) 2009-01-12

Family

ID=19189073

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020083957A KR100877663B1 (ko) 2001-12-27 2002-12-26 레지스트 재료 및 패턴 형성 방법

Country Status (5)

Country Link
US (1) US6866982B2 (US06866982-20050315-C00007.png)
EP (1) EP1324134B1 (US06866982-20050315-C00007.png)
KR (1) KR100877663B1 (US06866982-20050315-C00007.png)
DE (1) DE60238029D1 (US06866982-20050315-C00007.png)
TW (1) TWI282906B (US06866982-20050315-C00007.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4691442B2 (ja) * 2005-12-09 2011-06-01 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4553140B2 (ja) * 2005-12-13 2010-09-29 信越化学工業株式会社 ポジ型フォトレジスト組成物
JP5729312B2 (ja) * 2011-01-19 2015-06-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
KR101614628B1 (ko) * 2012-01-27 2016-04-21 아사히 가세이 이-매터리얼즈 가부시키가이샤 미세 요철 구조체, 건식 에칭용 열반응형 레지스트 재료, 몰드의 제조 방법 및 몰드

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0347190A (ja) * 1989-04-25 1991-02-28 Shin Etsu Chem Co Ltd 含フッ素界面活性剤及びその製造方法
JPH11327145A (ja) 1998-05-14 1999-11-26 Fuji Photo Film Co Ltd ポジ型感光性樹脂組成物
JP2000010287A (ja) * 1998-04-22 2000-01-14 Fuji Photo Film Co Ltd ポジ型感光性樹脂組成物
JP2000267268A (ja) 1999-03-17 2000-09-29 Tokyo Ohka Kogyo Co Ltd 微細パターン形成材料

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5124467A (en) * 1990-07-20 1992-06-23 Ciba-Geigy Corporation Perfluoroalkypolyoxyalkylpolysiloxane surfactants
JP3104939B2 (ja) 1992-10-01 2000-10-30 東京応化工業株式会社 半導体デバイス製造用レジスト現像液組成物
TW546540B (en) * 1997-04-30 2003-08-11 Wako Pure Chem Ind Ltd An agent for reducing the substrate dependence of resist and a resist composition
DE69817687T2 (de) 1997-06-24 2004-07-08 Fuji Photo Film Co., Ltd., Minami-Ashigara Positiv-Fotoresist-Zusammensetzung
JPH11109629A (ja) 1997-09-30 1999-04-23 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP3632383B2 (ja) 1997-07-11 2005-03-23 Ｊｓｒ株式会社 化学増幅型ポジ型レジスト用感放射線性樹脂組成物
JP3702590B2 (ja) 1997-07-11 2005-10-05 Ｊｓｒ株式会社 感放射線性樹脂組成物
JPH11352700A (ja) 1998-06-04 1999-12-24 Nippon Hyomen Kagaku Kk ホトレジスト用アルカリ性現像液
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP3890380B2 (ja) * 1999-05-28 2007-03-07 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
TW552475B (en) * 1999-06-09 2003-09-11 Wako Pure Chem Ind Ltd A resist composition
US6579658B2 (en) * 2000-02-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0347190A (ja) * 1989-04-25 1991-02-28 Shin Etsu Chem Co Ltd 含フッ素界面活性剤及びその製造方法
JP2000010287A (ja) * 1998-04-22 2000-01-14 Fuji Photo Film Co Ltd ポジ型感光性樹脂組成物
JPH11327145A (ja) 1998-05-14 1999-11-26 Fuji Photo Film Co Ltd ポジ型感光性樹脂組成物
JP2000267268A (ja) 1999-03-17 2000-09-29 Tokyo Ohka Kogyo Co Ltd 微細パターン形成材料

Also Published As

Publication number Publication date
EP1324134A3 (en) 2004-08-11
US6866982B2 (en) 2005-03-15
KR20030076207A (ko) 2003-09-26
EP1324134B1 (en) 2010-10-20
TW200303454A (en) 2003-09-01
DE60238029D1 (de) 2010-12-02
TWI282906B (en) 2007-06-21
US20030175617A1 (en) 2003-09-18
EP1324134A2 (en) 2003-07-02

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