DE60238029D1 - Resistzusammensetzung und Musterübertragungsverfahren - Google Patents

Resistzusammensetzung und Musterübertragungsverfahren

Info

Publication number
DE60238029D1
DE60238029D1 DE60238029T DE60238029T DE60238029D1 DE 60238029 D1 DE60238029 D1 DE 60238029D1 DE 60238029 T DE60238029 T DE 60238029T DE 60238029 T DE60238029 T DE 60238029T DE 60238029 D1 DE60238029 D1 DE 60238029D1
Authority
DE
Germany
Prior art keywords
resist composition
transfer method
pattern transfer
pattern
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60238029T
Other languages
English (en)
Inventor
Hideto Kato
Yoshinori Hirano
Toshihiko Fujii
Hiromasa Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE60238029D1 publication Critical patent/DE60238029D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
DE60238029T 2001-12-27 2002-12-24 Resistzusammensetzung und Musterübertragungsverfahren Expired - Lifetime DE60238029D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001396234 2001-12-27

Publications (1)

Publication Number Publication Date
DE60238029D1 true DE60238029D1 (de) 2010-12-02

Family

ID=19189073

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60238029T Expired - Lifetime DE60238029D1 (de) 2001-12-27 2002-12-24 Resistzusammensetzung und Musterübertragungsverfahren

Country Status (5)

Country Link
US (1) US6866982B2 (de)
EP (1) EP1324134B1 (de)
KR (1) KR100877663B1 (de)
DE (1) DE60238029D1 (de)
TW (1) TWI282906B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4691442B2 (ja) 2005-12-09 2011-06-01 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4553140B2 (ja) * 2005-12-13 2010-09-29 信越化学工業株式会社 ポジ型フォトレジスト組成物
JP5729312B2 (ja) * 2011-01-19 2015-06-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP6105490B2 (ja) * 2012-01-27 2017-03-29 旭化成株式会社 ドライエッチング用熱反応型レジスト材料、及びモールドの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043464A (en) * 1989-04-25 1991-08-27 Shin-Etsu Chemical Co., Ltd. Fluorine-containing surfactant and process for producing the same
US5124467A (en) * 1990-07-20 1992-06-23 Ciba-Geigy Corporation Perfluoroalkypolyoxyalkylpolysiloxane surfactants
JP3104939B2 (ja) 1992-10-01 2000-10-30 東京応化工業株式会社 半導体デバイス製造用レジスト現像液組成物
TW546540B (en) * 1997-04-30 2003-08-11 Wako Pure Chem Ind Ltd An agent for reducing the substrate dependence of resist and a resist composition
JPH11109629A (ja) 1997-09-30 1999-04-23 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
EP0887707B1 (de) 1997-06-24 2003-09-03 Fuji Photo Film Co., Ltd. Positiv-Fotoresist-Zusammensetzung
JP3702590B2 (ja) 1997-07-11 2005-10-05 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3632383B2 (ja) 1997-07-11 2005-03-23 Ｊｓｒ株式会社 化学増幅型ポジ型レジスト用感放射線性樹脂組成物
JP3922673B2 (ja) * 1998-04-22 2007-05-30 富士フイルム株式会社 ポジ型感光性樹脂組成物及びパターン形成方法
JP3901342B2 (ja) 1998-05-14 2007-04-04 富士フイルム株式会社 ポジ型感光性樹脂組成物
JPH11352700A (ja) 1998-06-04 1999-12-24 Nippon Hyomen Kagaku Kk ホトレジスト用アルカリ性現像液
JP2000267268A (ja) 1999-03-17 2000-09-29 Tokyo Ohka Kogyo Co Ltd 微細パターン形成材料
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP3890380B2 (ja) * 1999-05-28 2007-03-07 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
TW552475B (en) * 1999-06-09 2003-09-11 Wako Pure Chem Ind Ltd A resist composition
US6579658B2 (en) * 2000-02-17 2003-06-17 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process

Also Published As

Publication number Publication date
US6866982B2 (en) 2005-03-15
EP1324134A2 (de) 2003-07-02
EP1324134B1 (de) 2010-10-20
TWI282906B (en) 2007-06-21
KR20030076207A (ko) 2003-09-26
EP1324134A3 (de) 2004-08-11
KR100877663B1 (ko) 2009-01-12
US20030175617A1 (en) 2003-09-18
TW200303454A (en) 2003-09-01

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