KR100869458B1 - 레지스트 조성물 - Google Patents

레지스트 조성물 Download PDF

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Publication number
KR100869458B1
KR100869458B1 KR1020027006558A KR20027006558A KR100869458B1 KR 100869458 B1 KR100869458 B1 KR 100869458B1 KR 1020027006558 A KR1020027006558 A KR 1020027006558A KR 20027006558 A KR20027006558 A KR 20027006558A KR 100869458 B1 KR100869458 B1 KR 100869458B1
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South Korea
Prior art keywords
weight
resin
resist composition
compound
resist
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English (en)
Korean (ko)
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KR20030008216A (ko
Inventor
가시와기모또후미
구스노끼데쯔료
미따오노리유끼
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제온 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
KR1020027006558A 2000-02-21 2001-02-15 레지스트 조성물 Expired - Fee Related KR100869458B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00042167 2000-02-21
JP2000042167 2000-02-21

Publications (2)

Publication Number Publication Date
KR20030008216A KR20030008216A (ko) 2003-01-24
KR100869458B1 true KR100869458B1 (ko) 2008-11-19

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ID=18565277

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KR1020027006558A Expired - Fee Related KR100869458B1 (ko) 2000-02-21 2001-02-15 레지스트 조성물

Country Status (3)

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KR (1) KR100869458B1 (enExample)
TW (1) TWI292853B (enExample)
WO (1) WO2001061410A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI314249B (en) * 2004-03-31 2009-09-01 Zeon Corp Radiation-sensitive resin composition
JP4513965B2 (ja) * 2004-03-31 2010-07-28 日本ゼオン株式会社 感放射線性樹脂組成物
KR101298940B1 (ko) * 2005-08-23 2013-08-22 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
KR101357701B1 (ko) * 2006-02-08 2014-02-05 주식회사 동진쎄미켐 패턴 형성용 네거티브 포토레지스트 조성물 및 이를 이용한 표시장치 패턴 형성 방법
KR100833706B1 (ko) 2007-02-01 2008-05-29 삼성전자주식회사 감광성 폴리이미드 조성물, 폴리이미드 필름 및 이를 이용한 반도체 소자
KR101392291B1 (ko) * 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
JP5334743B2 (ja) * 2009-08-12 2013-11-06 富士フイルム株式会社 着色硬化性組成物、カラーフィルタ及びその製造方法、固体撮像素子、液晶ディスプレイ、有機ｅｌディスプレイ、並びに画像表示デバイス
JPWO2011102064A1 (ja) * 2010-02-19 2013-06-17 Jsr株式会社 ｎ型半導体層上の電極の形成方法
KR101015613B1 (ko) * 2010-02-24 2011-02-17 한국기계연구원 투명기판상 금속박막 패턴 형성방법
WO2011139073A2 (ko) 2010-05-04 2011-11-10 주식회사 엘지화학 네가티브 포토레지스트 조성물 및 소자의 패터닝 방법
CN110383172A (zh) 2017-03-29 2019-10-25 日本瑞翁株式会社 抗蚀剂图案形成方法
US10607856B2 (en) 2017-06-18 2020-03-31 Powertech Technology Inc. Manufacturing method of redistribution layer
CN111512228B (zh) * 2017-12-28 2024-09-06 默克专利有限公司 包含碱溶性树脂和交联剂的负型剥离抗蚀剂组合物以及在衬底上制造金属膜图案的方法
WO2020234222A1 (en) 2019-05-20 2020-11-26 Merck Patent Gmbh A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate.

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04314055A (ja) * 1991-04-12 1992-11-05 Sumitomo Chem Co Ltd ネガ型フォトレジスト組成物
JPH05165218A (ja) * 1991-12-16 1993-07-02 Nippon Zeon Co Ltd ネガ型感光性組成物
JPH07146556A (ja) * 1993-06-04 1995-06-06 Mitsubishi Chem Corp ネガ型感光性組成物
JPH10213902A (ja) * 1998-01-09 1998-08-11 Nippon Zeon Co Ltd リフトオフ法によるパターン形成用ネガ型感光性組成物
JPH1172913A (ja) * 1997-08-28 1999-03-16 Oki Electric Ind Co Ltd ネガ型レジストおよびレジストパターン形成方法
JPH11242326A (ja) * 1997-12-04 1999-09-07 Shipley Co Ltd Liability Co 新規な色素を含む放射感受性組成物
JP2000194143A (ja) * 1998-10-23 2000-07-14 Nippon Zeon Co Ltd 発光体蒸着膜のパタ―ン形成方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04314055A (ja) * 1991-04-12 1992-11-05 Sumitomo Chem Co Ltd ネガ型フォトレジスト組成物
JPH05165218A (ja) * 1991-12-16 1993-07-02 Nippon Zeon Co Ltd ネガ型感光性組成物
JPH07146556A (ja) * 1993-06-04 1995-06-06 Mitsubishi Chem Corp ネガ型感光性組成物
JPH1172913A (ja) * 1997-08-28 1999-03-16 Oki Electric Ind Co Ltd ネガ型レジストおよびレジストパターン形成方法
JPH11242326A (ja) * 1997-12-04 1999-09-07 Shipley Co Ltd Liability Co 新規な色素を含む放射感受性組成物
JPH10213902A (ja) * 1998-01-09 1998-08-11 Nippon Zeon Co Ltd リフトオフ法によるパターン形成用ネガ型感光性組成物
JP2000194143A (ja) * 1998-10-23 2000-07-14 Nippon Zeon Co Ltd 発光体蒸着膜のパタ―ン形成方法

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KR20030008216A (ko) 2003-01-24
WO2001061410A1 (en) 2001-08-23
TWI292853B (enExample) 2008-01-21

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