KR100855767B1 - 기판처리방법 - Google Patents

기판처리방법 Download PDF

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Publication number
KR100855767B1
KR100855767B1 KR1020067005453A KR20067005453A KR100855767B1 KR 100855767 B1 KR100855767 B1 KR 100855767B1 KR 1020067005453 A KR1020067005453 A KR 1020067005453A KR 20067005453 A KR20067005453 A KR 20067005453A KR 100855767 B1 KR100855767 B1 KR 100855767B1
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KR
South Korea
Prior art keywords
film
gate
source
substrate processing
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067005453A
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English (en)
Korean (ko)
Other versions
KR20060090224A (ko
Inventor
야스오 고바야시
쓰요시 하시모토
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20060090224A publication Critical patent/KR20060090224A/ko
Application granted granted Critical
Publication of KR100855767B1 publication Critical patent/KR100855767B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/0131—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional conductive layer comprising a silicide layer formed by the silicidation reaction between the layer of silicon with a metal layer which is not formed by metal implantation

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020067005453A 2003-09-19 2004-09-01 기판처리방법 Expired - Fee Related KR100855767B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00328226 2003-09-19
JP2003328226A JP2005093909A (ja) 2003-09-19 2003-09-19 基板処理方法及び基板処理装置

Publications (2)

Publication Number Publication Date
KR20060090224A KR20060090224A (ko) 2006-08-10
KR100855767B1 true KR100855767B1 (ko) 2008-09-01

Family

ID=34372894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067005453A Expired - Fee Related KR100855767B1 (ko) 2003-09-19 2004-09-01 기판처리방법

Country Status (5)

Country Link
US (1) US20070032073A1 (https=)
JP (1) JP2005093909A (https=)
KR (1) KR100855767B1 (https=)
CN (1) CN1853259A (https=)
WO (1) WO2005029562A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7550381B2 (en) 2005-07-18 2009-06-23 Applied Materials, Inc. Contact clean by remote plasma and repair of silicide surface
JP2007214538A (ja) * 2006-01-11 2007-08-23 Renesas Technology Corp 半導体装置およびその製造方法
KR100920054B1 (ko) * 2008-02-14 2009-10-07 주식회사 하이닉스반도체 반도체 소자의 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010051575A (ko) * 1999-11-09 2001-06-25 조셉 제이. 스위니 살리사이드 처리를 위한 화학적 플라즈마 세정

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW209308B (en) * 1992-03-02 1993-07-11 Digital Equipment Corp Self-aligned cobalt silicide on MOS integrated circuits
JPH0738104A (ja) * 1993-07-22 1995-02-07 Toshiba Corp 半導体装置の製造方法
JPH0950973A (ja) * 1995-08-10 1997-02-18 Sony Corp シリサイド層の形成方法
US6114216A (en) * 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US6706334B1 (en) * 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
JP4057198B2 (ja) * 1999-08-13 2008-03-05 東京エレクトロン株式会社 処理装置及び処理方法
US6494959B1 (en) * 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
KR100316721B1 (ko) * 2000-01-29 2001-12-12 윤종용 실리사이드막을 구비한 반도체소자의 제조방법
US6335249B1 (en) * 2000-02-07 2002-01-01 Taiwan Semiconductor Manufacturing Company Salicide field effect transistors with improved borderless contact structures and a method of fabrication
JP4493796B2 (ja) * 2000-03-30 2010-06-30 東京エレクトロン株式会社 誘電体膜の形成方法
KR100434110B1 (ko) * 2002-06-04 2004-06-04 삼성전자주식회사 반도체 장치의 제조방법
KR100452273B1 (ko) * 2002-10-22 2004-10-08 삼성전자주식회사 챔버의 클리닝 방법 및 반도체 소자 제조 방법
KR100688493B1 (ko) * 2003-06-17 2007-03-02 삼성전자주식회사 폴리실리콘 콘택 플러그를 갖는 금속-절연막-금속캐패시터 및 그 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010051575A (ko) * 1999-11-09 2001-06-25 조셉 제이. 스위니 살리사이드 처리를 위한 화학적 플라즈마 세정
JP2001274111A (ja) * 1999-11-09 2001-10-05 Applied Materials Inc サリサイド・プロセス用の化学的プラズマ洗浄

Also Published As

Publication number Publication date
US20070032073A1 (en) 2007-02-08
WO2005029562A1 (ja) 2005-03-31
CN1853259A (zh) 2006-10-25
JP2005093909A (ja) 2005-04-07
KR20060090224A (ko) 2006-08-10

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