KR100851156B1 - 액티브 구동형 유기 el 표시 장치 및 그 제조 방법 - Google Patents
액티브 구동형 유기 el 표시 장치 및 그 제조 방법Info
- Publication number
- KR100851156B1 KR100851156B1 KR1020017014144A KR20017014144A KR100851156B1 KR 100851156 B1 KR100851156 B1 KR 100851156B1 KR 1020017014144 A KR1020017014144 A KR 1020017014144A KR 20017014144 A KR20017014144 A KR 20017014144A KR 100851156 B1 KR100851156 B1 KR 100851156B1
- Authority
- KR
- South Korea
- Prior art keywords
- organic
- electrical connection
- connection member
- lower electrode
- color conversion
- Prior art date
Links
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/30—Devices specially adapted for multicolour light emission
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Abstract
Description
Claims (23)
- 상부 전극 및 하부 전극 사이에 유기 발광 매체를 유지하여 구성한 유기 EL 소자와 해당 유기 EL 소자의 발광 제어용 박막 트랜지스터(TFT)를 구비한 액티브 구동형 유기 EL 표시 장치에 있어서,상기 유기 EL 소자의 발광을 상기 하부 전극측으로부터 취출하고, 또한 상기 하부 전극과 상기 박막 트랜지스터 사이에 색 변환 매체가 마련되어 있고,또한, 상기 색 변환 매체의 측단에, 전기 접속 부재를 경사시키기 위한 사행 부재를 마련하고, 상기 사행 부재의 사면을 따라서, 경사진 상기 전기 접속 부재를 마련하여, 상기 색 변환 매체를 마련함으로써 생기는 상기 하부 전극과 상기 박막 트랜지스터 사이의 단차를 통해서 상기 하부 전극과 상기 박막 트랜지스터를 접속하는것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항에 있어서,상기 전기 접속 부재의 평면 방향에 대한 경사 각도를 10°∼80° 범위내의 값으로 하는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 삭제
- 삭제
- 제 1 항 또는 제 2 항에 있어서,상기 전기 접속 부재가 상기 유기 EL 소자와 상기 박막 트랜지스터 사이의 층간 절연막에 형성한 비아 홀인 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 전기 접속 부재가 도전성 페이스트를 소결하여 이루어지는 전기 배선인 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 전기 접속 부재가 본딩 와이어인 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 전기 접속 부재가 인듐 아연 산화물(IZO)로 구성되어 있는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 하부 전극이 인듐 아연 산화물 또는 인듐 주석 산화물로 구성되어 있는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 9 항에 있어서,상기 하부 전극과 상기 전기 접속 부재가 비결정성 도전 산화물을 이용하여 일체적으로 형성되어 있는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 전기 접속 부재의 일부에 메탈라이즈부가 마련되어 있는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 전기 접속 부재의 두께를 0.01∼100㎛ 범위내의 값으로 하는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 색 변환 매체가 지지 기판내에 매설되어 있는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 박막 트랜지스터와 지지 기판 사이에, 박막 트랜지스터의 높이 위치를 조절하기 위한 위치 조절층이 마련되어 있는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 상부 전극 및 하부 전극 사이에 유기 발광 매체를 유지하여 구성한 유기 EL 소자와, 하부 전극측으로부터 취출한 EL 발광을 색 변환하기 위한 색 변환 매체와, 유기 EL 소자의 발광 제어용 박막 트랜지스터를 구비한 액티브 구동형 유기 EL 표시 장치의 제조 방법에 있어서,상기 박막 트랜지스터를 형성하는 공정과,하부 전극과 박막 트랜지스터의 사이에 상기 색 변환 매체를 형성하고, 상기 색 변환 매체의 측단에 사행 부재를 마련하는 공정과,상기 하부 전극과 박막 트랜지스터 간의 단차에 전기 접속 부재를 상기 사행 부재의 사면을 따라 경사지게 형성하는 공정과,상기 유기 EL 소자를 형성하는 공정을 포함하는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치의 제조 방법.
- 삭제
- 제 15 항에 있어서,상기 하부 전극과 상기 전기 접속 부재를 비결정성 도전 산화물을 이용하여 일체적으로 형성하는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치의 제조 방법.
- 제 15 항에 있어서,상기 전기 접속 부재를 진공 증착법 또는 스퍼터링법을 이용하여 형성하는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치의 제조 방법.
- 제 15 항에 있어서,상기 전기 접속 부재를 졸겔법을 이용하여 형성하는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치의 제조 방법.
- 제 15 항에 있어서,상기 전기 접속 부재의 적어도 일부를 메탈라이즈화하는 공정을 포함하는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 사행 부재는 평탄화막인 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 사행 부재는 상기 색 변환 매체 상에 형성되어 있는 평탄화막인 것을 특징으로하는 액티브 구동형 유기 EL 표시 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 사행 부재는 상기 전기 접속 부재가 접속되는 박막 트랜지스터의 드레인 부분만이 개구되는 패턴으로, 상기 색 변환 매체 상에 형성되어 있는 것을 특징으로 하는 액티브 구동형 유기 EL 표시 장치.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101069050B1 (ko) | 2007-03-29 | 2011-09-29 | 파이오니아 가부시키가이샤 | 유기 el 표시장치 및 그 제조방법 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW495812B (en) * | 2000-03-06 | 2002-07-21 | Semiconductor Energy Lab | Thin film forming device, method of forming a thin film, and self-light-emitting device |
CN1170458C (zh) * | 2000-03-07 | 2004-10-06 | 出光兴产株式会社 | 有源驱动型有机el显示装置及其制造方法 |
SG143063A1 (en) * | 2002-01-24 | 2008-06-27 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
US6933520B2 (en) * | 2002-02-13 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
EP1343206B1 (en) | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
US7474045B2 (en) * | 2002-05-17 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device having TFT with radiation-absorbing film |
JP4234376B2 (ja) * | 2002-08-28 | 2009-03-04 | 東芝松下ディスプレイテクノロジー株式会社 | 表示装置及び電子機器 |
TWI272872B (en) * | 2002-12-13 | 2007-02-01 | Lg Philips Lcd Co Ltd | Dual panel-type organic electroluminescent display device and method of fabricating the same |
KR100503129B1 (ko) | 2002-12-28 | 2005-07-22 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그 제조방법 |
JP4266648B2 (ja) * | 2003-01-21 | 2009-05-20 | 三洋電機株式会社 | エレクトロルミネッセンス表示装置 |
JP4273809B2 (ja) * | 2003-03-31 | 2009-06-03 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
TWI228384B (en) * | 2003-06-26 | 2005-02-21 | Ind Tech Res Inst | Active matrix organic light emitting diode |
JP4195352B2 (ja) | 2003-09-10 | 2008-12-10 | 三星エスディアイ株式会社 | 発光素子基板およびそれを用いた発光素子 |
TWI245426B (en) * | 2004-01-07 | 2005-12-11 | Hannstar Display Corp | Shielded-junction TFT structure |
JP3743005B2 (ja) * | 2004-01-29 | 2006-02-08 | 日本精機株式会社 | 有機elパネル |
JP2005234091A (ja) * | 2004-02-18 | 2005-09-02 | Hitachi Displays Ltd | 表示装置 |
TWI231723B (en) * | 2004-04-16 | 2005-04-21 | Ind Tech Res Inst | Organic electroluminescence display device |
US7642711B2 (en) * | 2004-07-06 | 2010-01-05 | Fujifilm Corporation | Functional layer having wiring connected to electrode and barrier metal between electrode and wiring |
JP2006202709A (ja) * | 2005-01-24 | 2006-08-03 | Victor Co Of Japan Ltd | 有機エレクトロルミネセンス表示装置 |
KR101267357B1 (ko) * | 2005-04-14 | 2013-05-27 | 톰슨 라이센싱 | 하부 겹층 전극을 가지는 전기 광학 요소를 구비한 능동 매트릭스 디스플레이 |
JP5235269B2 (ja) * | 2005-12-19 | 2013-07-10 | エルジー ディスプレイ カンパニー リミテッド | 画像表示装置およびその製造方法 |
KR100835053B1 (ko) * | 2006-01-05 | 2008-06-03 | 삼성전기주식회사 | 반도체 발광 소자를 이용한 플렉서블 디스플레이 및 그제조 방법 |
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
DE102006051745B4 (de) * | 2006-09-28 | 2024-02-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
GB0803702D0 (en) | 2008-02-28 | 2008-04-09 | Isis Innovation | Transparent conducting oxides |
CN101834009B (zh) * | 2009-03-13 | 2013-05-01 | 中国科学院福建物质结构研究所 | 一种低铟掺杂量氧化锌透明导电膜及其制备方法 |
JP5271173B2 (ja) * | 2009-06-26 | 2013-08-21 | 三菱電機株式会社 | 画像表示素子及びその製造方法 |
GB0915376D0 (en) | 2009-09-03 | 2009-10-07 | Isis Innovation | Transparent conducting oxides |
KR101789309B1 (ko) | 2009-10-21 | 2017-10-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 아날로그 회로 및 반도체 장치 |
KR101344977B1 (ko) | 2010-09-29 | 2014-01-15 | 파나소닉 주식회사 | El 표시 패널, el 표시 장치 및 el 표시 패널의 제조 방법 |
JP5573686B2 (ja) * | 2011-01-06 | 2014-08-20 | ソニー株式会社 | 有機el表示装置及び電子機器 |
KR101827849B1 (ko) * | 2011-02-09 | 2018-02-12 | 삼성디스플레이 주식회사 | 블랙 매트릭스 레지스트 조성물, 블랙 매트릭스 레지스트 제조 방법, 컬러 필터 표시판 및 그 제조 방법 |
JP2013122903A (ja) * | 2011-11-10 | 2013-06-20 | Nitto Denko Corp | 有機elデバイス、および、有機elデバイスの製造方法 |
WO2014073278A1 (ja) * | 2012-11-06 | 2014-05-15 | ソニー株式会社 | 光電変換素子および固体撮像装置ならびに電子機器 |
CN102929060B (zh) * | 2012-11-16 | 2015-06-17 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
KR20140080812A (ko) | 2012-12-18 | 2014-07-01 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
WO2014199673A1 (ja) * | 2013-06-11 | 2014-12-18 | シャープ株式会社 | 有機エレクトロルミネッセンス表示装置 |
JP6357349B2 (ja) * | 2014-05-16 | 2018-07-11 | 株式会社ジャパンディスプレイ | 表示装置 |
TWI582968B (zh) * | 2014-08-15 | 2017-05-11 | 群創光電股份有限公司 | 陣列基板結構及接觸結構 |
CN104362157B (zh) * | 2014-12-02 | 2017-05-03 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN104880879A (zh) * | 2015-06-19 | 2015-09-02 | 京东方科技集团股份有限公司 | Coa阵列基板及其制造方法、显示装置 |
CN107154419A (zh) * | 2017-04-06 | 2017-09-12 | 惠科股份有限公司 | 显示面板及其制造方法 |
KR20210042195A (ko) * | 2019-10-08 | 2021-04-19 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111834538B (zh) * | 2020-02-26 | 2021-07-06 | 昆山国显光电有限公司 | 显示面板、显示装置和显示面板的制造方法 |
KR20210124556A (ko) | 2020-04-03 | 2021-10-15 | 삼성디스플레이 주식회사 | 표시 패널 |
CN112040743A (zh) * | 2020-09-09 | 2020-12-04 | 广东思泉新材料股份有限公司 | 一种具有包覆层结构的导热片 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08125297A (ja) * | 1994-10-21 | 1996-05-17 | Nippondenso Co Ltd | スルーホール両面基板 |
JPH10206888A (ja) * | 1997-01-21 | 1998-08-07 | Sharp Corp | 液晶表示装置及びその製造方法 |
KR0180249B1 (ko) * | 1993-10-05 | 1999-05-15 | 아키모토 유기 | 전도성 막 형성용 조성물 |
KR19990058637A (ko) * | 1997-12-30 | 1999-07-15 | 구자홍 | 액정표시장치 및 그 제조방법 |
KR19990067490A (ko) * | 1995-11-28 | 1999-08-25 | 포만 제프리 엘 | 유기 전자 발광 소자를 향상시키기 위하여 사용된 유기/무기 합금 |
KR19990083050A (ko) * | 1998-04-08 | 1999-11-25 | 니시무로 타이죠 | 표시장치용 어레이 기판 및 그 제조방법 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2914981B2 (ja) | 1988-07-27 | 1999-07-05 | パイオニア株式会社 | 表示装置 |
JP3016808B2 (ja) | 1990-02-06 | 2000-03-06 | パイオニア株式会社 | 電界発光素子及びその製造方法 |
JPH088148B2 (ja) * | 1990-12-18 | 1996-01-29 | 富士ゼロックス株式会社 | El発光素子 |
US5640067A (en) | 1995-03-24 | 1997-06-17 | Tdk Corporation | Thin film transistor, organic electroluminescence display device and manufacturing method of the same |
US6091194A (en) * | 1995-11-22 | 2000-07-18 | Motorola, Inc. | Active matrix display |
TW364275B (en) | 1996-03-12 | 1999-07-11 | Idemitsu Kosan Co | Organic electroluminescent element and organic electroluminescent display device |
JP4011649B2 (ja) * | 1996-06-11 | 2007-11-21 | 出光興産株式会社 | 多色発光装置およびその製造方法 |
JP2847360B2 (ja) | 1996-08-09 | 1999-01-20 | 岡谷電機産業株式会社 | Led表示装置 |
DE69739633D1 (de) * | 1996-11-28 | 2009-12-10 | Casio Computer Co Ltd | Anzeigevorrichtung |
JPH10161563A (ja) * | 1996-11-29 | 1998-06-19 | Tdk Corp | 有機el表示装置 |
JP3530362B2 (ja) * | 1996-12-19 | 2004-05-24 | 三洋電機株式会社 | 自発光型画像表示装置 |
US5834893A (en) | 1996-12-23 | 1998-11-10 | The Trustees Of Princeton University | High efficiency organic light emitting devices with light directing structures |
JP3463971B2 (ja) | 1996-12-26 | 2003-11-05 | 出光興産株式会社 | 有機アクティブel発光装置 |
JP4086925B2 (ja) * | 1996-12-27 | 2008-05-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクスディスプレイ |
JPH10208879A (ja) | 1997-01-27 | 1998-08-07 | Idemitsu Kosan Co Ltd | 蛍光変換膜の製造方法 |
JP3641342B2 (ja) | 1997-03-07 | 2005-04-20 | Tdk株式会社 | 半導体装置及び有機elディスプレイ装置 |
JPH10289784A (ja) * | 1997-04-14 | 1998-10-27 | Mitsubishi Chem Corp | 有機電界発光素子 |
JPH10303525A (ja) | 1997-04-24 | 1998-11-13 | Shinko Electric Ind Co Ltd | 配線基板、多層配線基板及びその製造方法 |
JP3901285B2 (ja) | 1997-05-26 | 2007-04-04 | 株式会社Kri | In2O3−SnO2系薄膜の製造方法 |
JPH118473A (ja) | 1997-06-18 | 1999-01-12 | Ngk Spark Plug Co Ltd | プリント配線板 |
JPH11212493A (ja) * | 1998-01-29 | 1999-08-06 | Sharp Corp | 発光表示装置 |
JP2000003785A (ja) | 1998-06-15 | 2000-01-07 | Sony Corp | エレクトロルミネッセント・ディスプレイの製造方法 |
US6280559B1 (en) * | 1998-06-24 | 2001-08-28 | Sharp Kabushiki Kaisha | Method of manufacturing color electroluminescent display apparatus and method of bonding light-transmitting substrates |
US6307322B1 (en) * | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
JP4542659B2 (ja) * | 2000-03-07 | 2010-09-15 | 出光興産株式会社 | アクティブ駆動型有機el表示装置およびその製造方法 |
CN1170458C (zh) * | 2000-03-07 | 2004-10-06 | 出光兴产株式会社 | 有源驱动型有机el显示装置及其制造方法 |
-
2001
- 2001-03-05 CN CNB018004547A patent/CN1170458C/zh not_active Expired - Lifetime
- 2001-03-05 EP EP01908299A patent/EP1178709A4/en not_active Withdrawn
- 2001-03-05 WO PCT/JP2001/001676 patent/WO2001067824A1/ja active Application Filing
- 2001-03-05 KR KR1020017014144A patent/KR100851156B1/ko active IP Right Grant
- 2001-03-05 US US09/959,601 patent/US6995736B2/en not_active Expired - Lifetime
- 2001-03-05 JP JP2001565708A patent/JP4608170B2/ja not_active Expired - Lifetime
- 2001-03-05 KR KR1020087012567A patent/KR20080056776A/ko not_active Application Discontinuation
- 2001-03-06 TW TW090105173A patent/TWI245577B/zh not_active IP Right Cessation
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2005
- 2005-05-24 US US11/135,341 patent/US7227518B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0180249B1 (ko) * | 1993-10-05 | 1999-05-15 | 아키모토 유기 | 전도성 막 형성용 조성물 |
JPH08125297A (ja) * | 1994-10-21 | 1996-05-17 | Nippondenso Co Ltd | スルーホール両面基板 |
KR19990067490A (ko) * | 1995-11-28 | 1999-08-25 | 포만 제프리 엘 | 유기 전자 발광 소자를 향상시키기 위하여 사용된 유기/무기 합금 |
JPH10206888A (ja) * | 1997-01-21 | 1998-08-07 | Sharp Corp | 液晶表示装置及びその製造方法 |
KR19990058637A (ko) * | 1997-12-30 | 1999-07-15 | 구자홍 | 액정표시장치 및 그 제조방법 |
KR19990083050A (ko) * | 1998-04-08 | 1999-11-25 | 니시무로 타이죠 | 표시장치용 어레이 기판 및 그 제조방법 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101069050B1 (ko) | 2007-03-29 | 2011-09-29 | 파이오니아 가부시키가이샤 | 유기 el 표시장치 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US7227518B2 (en) | 2007-06-05 |
KR20080056776A (ko) | 2008-06-23 |
US20050110716A1 (en) | 2005-05-26 |
KR20020001864A (ko) | 2002-01-09 |
TWI245577B (en) | 2005-12-11 |
CN1170458C (zh) | 2004-10-06 |
EP1178709A1 (en) | 2002-02-06 |
WO2001067824A1 (fr) | 2001-09-13 |
EP1178709A4 (en) | 2007-02-14 |
US20050218819A1 (en) | 2005-10-06 |
JP4608170B2 (ja) | 2011-01-05 |
CN1364396A (zh) | 2002-08-14 |
US6995736B2 (en) | 2006-02-07 |
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