KR100834300B1 - 고체 촬상 소자의 제조 방법 - Google Patents

고체 촬상 소자의 제조 방법 Download PDF

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Publication number
KR100834300B1
KR100834300B1 KR1020010020743A KR20010020743A KR100834300B1 KR 100834300 B1 KR100834300 B1 KR 100834300B1 KR 1020010020743 A KR1020010020743 A KR 1020010020743A KR 20010020743 A KR20010020743 A KR 20010020743A KR 100834300 B1 KR100834300 B1 KR 100834300B1
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KR
South Korea
Prior art keywords
ion implantation
sensor
substrate surface
solid
region
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Expired - Fee Related
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KR1020010020743A
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English (en)
Korean (ko)
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KR20010098696A (ko
Inventor
오하시마사노리
Original Assignee
소니 가부시끼 가이샤
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Publication of KR20010098696A publication Critical patent/KR20010098696A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
KR1020010020743A 2000-04-19 2001-04-18 고체 촬상 소자의 제조 방법 Expired - Fee Related KR100834300B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000117326A JP2001308304A (ja) 2000-04-19 2000-04-19 固体撮像素子の製造方法
JP2000-117326 2000-04-19

Publications (2)

Publication Number Publication Date
KR20010098696A KR20010098696A (ko) 2001-11-08
KR100834300B1 true KR100834300B1 (ko) 2008-06-02

Family

ID=18628657

Family Applications (1)

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KR1020010020743A Expired - Fee Related KR100834300B1 (ko) 2000-04-19 2001-04-18 고체 촬상 소자의 제조 방법

Country Status (3)

Country Link
US (1) US6551910B2 (https=)
JP (1) JP2001308304A (https=)
KR (1) KR100834300B1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100700269B1 (ko) * 2001-11-22 2007-03-26 매그나칩 반도체 유한회사 시모스 이미지센서 및 그 제조방법
KR100700270B1 (ko) * 2001-11-22 2007-03-26 매그나칩 반도체 유한회사 시모스 이미지센서 및 그 제조방법
FR2833408B1 (fr) * 2001-12-12 2004-03-12 St Microelectronics Sa Procede de controle du sur eclairement d'une photodiode et circuit integre correspondant
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法
JP4490075B2 (ja) * 2003-10-28 2010-06-23 富士フイルム株式会社 固体撮像素子及びその製造方法
JP4444754B2 (ja) * 2004-08-12 2010-03-31 富士フイルム株式会社 固体撮像装置の駆動方法
US7098067B2 (en) * 2004-12-13 2006-08-29 International Business Machines Corporation Masked sidewall implant for image sensor
JP4981255B2 (ja) * 2005-01-24 2012-07-18 オンセミコンダクター・トレーディング・リミテッド 電荷結合装置及び固体撮像装置
US7141836B1 (en) * 2005-05-31 2006-11-28 International Business Machines Corporation Pixel sensor having doped isolation structure sidewall
WO2008022918A2 (de) * 2006-08-23 2008-02-28 Basf Se Verbindungen und ihre verwendung zur herstellung von leder und als dispergiermittel
US8072015B2 (en) 2007-06-04 2011-12-06 Sony Corporation Solid-state imaging device and manufacturing method thereof
US8772891B2 (en) 2008-12-10 2014-07-08 Truesense Imaging, Inc. Lateral overflow drain and channel stop regions in image sensors
US8804021B2 (en) * 2011-11-03 2014-08-12 Omnivision Technologies, Inc. Method, apparatus and system for providing improved full well capacity in an image sensor pixel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240388A (ja) * 1994-02-28 1995-09-12 Nec Corp 半導体装置のイオン注入方法
JPH09289309A (ja) * 1996-04-19 1997-11-04 Nec Corp 電荷結合素子およびその製造方法
KR0136924B1 (ko) * 1994-07-06 1998-04-24 문정환 씨씨디(ccd) 영상소자의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE39611B1 (en) * 1973-08-14 1978-11-22 Siemens Ag Improvements in or relating to two-phase charge coupled devices
JP2970158B2 (ja) * 1991-12-20 1999-11-02 日本電気株式会社 固体撮像装置の製造方法
FR2735904B1 (fr) * 1995-06-21 1997-07-18 Commissariat Energie Atomique Procede de realisation d'un semi-conducteur avec une zone fortement dopee situee entre des zones faiblement dopees, pour la fabrication de transistors
US6023081A (en) * 1997-11-14 2000-02-08 Motorola, Inc. Semiconductor image sensor
US6114210A (en) * 1997-11-26 2000-09-05 Advanced Micro Devices, Inc. Method of forming semiconductor device comprising a drain region with a graded N-LDD junction with increased HCI lifetime
US6333526B1 (en) * 1997-11-27 2001-12-25 Nec Corporation Charge transfer device and a manufacturing process therefor
US6194278B1 (en) * 1999-06-21 2001-02-27 Infineon Technologies North America Corp. Device performance by employing an improved method for forming halo implants

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240388A (ja) * 1994-02-28 1995-09-12 Nec Corp 半導体装置のイオン注入方法
KR0136924B1 (ko) * 1994-07-06 1998-04-24 문정환 씨씨디(ccd) 영상소자의 제조방법
JPH09289309A (ja) * 1996-04-19 1997-11-04 Nec Corp 電荷結合素子およびその製造方法

Also Published As

Publication number Publication date
KR20010098696A (ko) 2001-11-08
US20020003611A1 (en) 2002-01-10
US6551910B2 (en) 2003-04-22
JP2001308304A (ja) 2001-11-02

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