KR100834174B1 - 전해질을 평탄한 기판 표면에 공급하기 위한 양극조립체와그 방법 - Google Patents

전해질을 평탄한 기판 표면에 공급하기 위한 양극조립체와그 방법 Download PDF

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KR100834174B1
KR100834174B1 KR1020037014220A KR20037014220A KR100834174B1 KR 100834174 B1 KR100834174 B1 KR 100834174B1 KR 1020037014220 A KR1020037014220 A KR 1020037014220A KR 20037014220 A KR20037014220 A KR 20037014220A KR 100834174 B1 KR100834174 B1 KR 100834174B1
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South Korea
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chamber
anode
solution
anode assembly
housing
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Korean (ko)
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KR20040038912A (ko
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사이프리안이. 우조
호메이윤 탈리에
버렌트엠. 바솔
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에이에스엠 누툴, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
KR1020037014220A 2001-05-01 2002-02-06 전해질을 평탄한 기판 표면에 공급하기 위한 양극조립체와그 방법 Expired - Lifetime KR100834174B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/845,262 US6695962B2 (en) 2001-05-01 2001-05-01 Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs
US09/845,262 2001-05-01
PCT/US2002/003330 WO2002088431A1 (en) 2001-05-01 2002-02-06 Anode assembly and process for supplying electrolyte to a planar substrate surface

Publications (2)

Publication Number Publication Date
KR20040038912A KR20040038912A (ko) 2004-05-08
KR100834174B1 true KR100834174B1 (ko) 2008-05-30

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Application Number Title Priority Date Filing Date
KR1020037014220A Expired - Lifetime KR100834174B1 (ko) 2001-05-01 2002-02-06 전해질을 평탄한 기판 표면에 공급하기 위한 양극조립체와그 방법

Country Status (6)

Country Link
US (2) US6695962B2 (enExample)
EP (1) EP1392889A4 (enExample)
JP (1) JP2004530791A (enExample)
KR (1) KR100834174B1 (enExample)
CN (1) CN1289712C (enExample)
WO (1) WO2002088431A1 (enExample)

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KR101607537B1 (ko) * 2014-09-26 2016-03-31 주식회사 티케이씨 웨이퍼 도금시 아노드에서 발생되는 가스의 제거 기능을 가진 도금장치

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KR100651919B1 (ko) * 2005-09-29 2006-12-01 엘지전자 주식회사 녹화 속도 조절 기능을 갖는 이동통신단말기 및 이를이용한 방법
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) * 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
WO2020097354A2 (en) * 2018-11-09 2020-05-14 Illinois Tool Works Inc. Modular fluid application device for varying fluid coat weight
CN110528042B (zh) * 2019-08-28 2021-02-09 深圳赛意法微电子有限公司 一种半导体器件电镀方法及用于电镀的活化槽

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Also Published As

Publication number Publication date
CN1529769A (zh) 2004-09-15
JP2004530791A (ja) 2004-10-07
CN1289712C (zh) 2006-12-13
US20020162750A1 (en) 2002-11-07
US6695962B2 (en) 2004-02-24
EP1392889A4 (en) 2006-10-04
WO2002088431A1 (en) 2002-11-07
KR20040038912A (ko) 2004-05-08
US20040163963A1 (en) 2004-08-26
EP1392889A1 (en) 2004-03-03

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