JP2004530791A - 平坦な基板表面へ電解液を供給するための陽極組立体及び方法 - Google Patents
平坦な基板表面へ電解液を供給するための陽極組立体及び方法 Download PDFInfo
- Publication number
- JP2004530791A JP2004530791A JP2002585704A JP2002585704A JP2004530791A JP 2004530791 A JP2004530791 A JP 2004530791A JP 2002585704 A JP2002585704 A JP 2002585704A JP 2002585704 A JP2002585704 A JP 2002585704A JP 2004530791 A JP2004530791 A JP 2004530791A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- solution
- anode
- anode assembly
- housing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/04—Planarisation of conductive or resistive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/845,262 US6695962B2 (en) | 2001-05-01 | 2001-05-01 | Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs |
| PCT/US2002/003330 WO2002088431A1 (en) | 2001-05-01 | 2002-02-06 | Anode assembly and process for supplying electrolyte to a planar substrate surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004530791A true JP2004530791A (ja) | 2004-10-07 |
| JP2004530791A5 JP2004530791A5 (enExample) | 2005-12-22 |
Family
ID=25294798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002585704A Pending JP2004530791A (ja) | 2001-05-01 | 2002-02-06 | 平坦な基板表面へ電解液を供給するための陽極組立体及び方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6695962B2 (enExample) |
| EP (1) | EP1392889A4 (enExample) |
| JP (1) | JP2004530791A (enExample) |
| KR (1) | KR100834174B1 (enExample) |
| CN (1) | CN1289712C (enExample) |
| WO (1) | WO2002088431A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110528042A (zh) * | 2019-08-28 | 2019-12-03 | 深圳赛意法微电子有限公司 | 一种半导体器件电镀方法及用于电镀的活化槽 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7195696B2 (en) * | 2000-05-11 | 2007-03-27 | Novellus Systems, Inc. | Electrode assembly for electrochemical processing of workpiece |
| US7128823B2 (en) | 2002-07-24 | 2006-10-31 | Applied Materials, Inc. | Anolyte for copper plating |
| US7247222B2 (en) * | 2002-07-24 | 2007-07-24 | Applied Materials, Inc. | Electrochemical processing cell |
| US6852209B2 (en) * | 2002-10-02 | 2005-02-08 | Applied Materials, Inc. | Insoluble electrode for electrochemical operations on substrates |
| DE10322894A1 (de) * | 2003-05-21 | 2004-12-16 | Prominent Dosiertechnik Gmbh | Chloritsensor |
| KR100651919B1 (ko) * | 2005-09-29 | 2006-12-01 | 엘지전자 주식회사 | 녹화 속도 조절 기능을 갖는 이동통신단말기 및 이를이용한 방법 |
| US9523155B2 (en) | 2012-12-12 | 2016-12-20 | Novellus Systems, Inc. | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
| KR101607537B1 (ko) * | 2014-09-26 | 2016-03-31 | 주식회사 티케이씨 | 웨이퍼 도금시 아노드에서 발생되는 가스의 제거 기능을 가진 도금장치 |
| US10364505B2 (en) | 2016-05-24 | 2019-07-30 | Lam Research Corporation | Dynamic modulation of cross flow manifold during elecroplating |
| US11001934B2 (en) | 2017-08-21 | 2021-05-11 | Lam Research Corporation | Methods and apparatus for flow isolation and focusing during electroplating |
| US10781527B2 (en) * | 2017-09-18 | 2020-09-22 | Lam Research Corporation | Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating |
| WO2020097354A2 (en) * | 2018-11-09 | 2020-05-14 | Illinois Tool Works Inc. | Modular fluid application device for varying fluid coat weight |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL191790A (enExample) * | 1954-10-23 | |||
| US3328273A (en) | 1966-08-15 | 1967-06-27 | Udylite Corp | Electro-deposition of copper from acidic baths |
| US4258316A (en) * | 1978-12-08 | 1981-03-24 | Coulter Electronics, Inc. | Use of fluid retarding ion conducting material |
| FR2510145B1 (fr) | 1981-07-24 | 1986-02-07 | Rhone Poulenc Spec Chim | Additif pour bain de cuivrage electrolytique acide, son procede de preparation et son application au cuivrage des circuits imprimes |
| US4948474A (en) | 1987-09-18 | 1990-08-14 | Pennsylvania Research Corporation | Copper electroplating solutions and methods |
| DE3836521C2 (de) | 1988-10-24 | 1995-04-13 | Atotech Deutschland Gmbh | Wäßriges saures Bad zur galvanischen Abscheidung von glänzenden und rißfreien Kupferüberzügen und Verwendung des Bades |
| US5084071A (en) | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US5256565A (en) | 1989-05-08 | 1993-10-26 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical planarization |
| US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| US5516412A (en) | 1995-05-16 | 1996-05-14 | International Business Machines Corporation | Vertical paddle plating cell |
| US5681215A (en) | 1995-10-27 | 1997-10-28 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| US5795215A (en) | 1995-06-09 | 1998-08-18 | Applied Materials, Inc. | Method and apparatus for using a retaining ring to control the edge effect |
| EP0751567B1 (en) | 1995-06-27 | 2007-11-28 | International Business Machines Corporation | Copper alloys for chip interconnections and method of making |
| US5755859A (en) | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
| US5762544A (en) | 1995-10-27 | 1998-06-09 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| US5840629A (en) | 1995-12-14 | 1998-11-24 | Sematech, Inc. | Copper chemical mechanical polishing slurry utilizing a chromate oxidant |
| US5858813A (en) | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| US5793272A (en) | 1996-08-23 | 1998-08-11 | International Business Machines Corporation | Integrated circuit toroidal inductor |
| US5683564A (en) * | 1996-10-15 | 1997-11-04 | Reynolds Tech Fabricators Inc. | Plating cell and plating method with fluid wiper |
| US5773364A (en) | 1996-10-21 | 1998-06-30 | Motorola, Inc. | Method for using ammonium salt slurries for chemical mechanical polishing (CMP) |
| US5954997A (en) | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| KR20000057470A (ko) | 1996-12-16 | 2000-09-15 | 포만 제프리 엘 | 집적 회로 칩 상의 전기 도금된 상호 접속 구조체 |
| US5933753A (en) | 1996-12-16 | 1999-08-03 | International Business Machines Corporation | Open-bottomed via liner structure and method for fabricating same |
| US5807165A (en) | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
| US5911619A (en) | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
| US5930669A (en) | 1997-04-03 | 1999-07-27 | International Business Machines Corporation | Continuous highly conductive metal wiring structures and method for fabricating the same |
| US5922091A (en) | 1997-05-16 | 1999-07-13 | National Science Council Of Republic Of China | Chemical mechanical polishing slurry for metallic thin film |
| US5985123A (en) | 1997-07-09 | 1999-11-16 | Koon; Kam Kwan | Continuous vertical plating system and method of plating |
| US5964653A (en) | 1997-07-11 | 1999-10-12 | Applied Materials, Inc. | Carrier head with a flexible membrane for a chemical mechanical polishing system |
| WO1999016936A1 (en) * | 1997-09-30 | 1999-04-08 | Semitool, Inc. | Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations |
| US5897375A (en) | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
| US6159354A (en) | 1997-11-13 | 2000-12-12 | Novellus Systems, Inc. | Electric potential shaping method for electroplating |
| US6027631A (en) | 1997-11-13 | 2000-02-22 | Novellus Systems, Inc. | Electroplating system with shields for varying thickness profile of deposited layer |
| US6004880A (en) | 1998-02-20 | 1999-12-21 | Lsi Logic Corporation | Method of single step damascene process for deposition and global planarization |
| JP2002506488A (ja) * | 1998-04-21 | 2002-02-26 | アプライド マテリアルズ インコーポレイテッド | 電気化学堆積システム及び基体の電気めっき方法 |
| US6071388A (en) | 1998-05-29 | 2000-06-06 | International Business Machines Corporation | Electroplating workpiece fixture having liquid gap spacer |
| US6074544A (en) | 1998-07-22 | 2000-06-13 | Novellus Systems, Inc. | Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer |
| KR100683268B1 (ko) * | 1998-09-08 | 2007-02-15 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판도금장치 |
| US6244942B1 (en) | 1998-10-09 | 2001-06-12 | Applied Materials, Inc. | Carrier head with a flexible membrane and adjustable edge pressure |
| US6132587A (en) | 1998-10-19 | 2000-10-17 | Jorne; Jacob | Uniform electroplating of wafers |
| US6176992B1 (en) | 1998-11-03 | 2001-01-23 | Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
| US6103085A (en) | 1998-12-04 | 2000-08-15 | Advanced Micro Devices, Inc. | Electroplating uniformity by diffuser design |
| US6113759A (en) | 1998-12-18 | 2000-09-05 | International Business Machines Corporation | Anode design for semiconductor deposition having novel electrical contact assembly |
| US6066030A (en) | 1999-03-04 | 2000-05-23 | International Business Machines Corporation | Electroetch and chemical mechanical polishing equipment |
| US6136163A (en) | 1999-03-05 | 2000-10-24 | Applied Materials, Inc. | Apparatus for electro-chemical deposition with thermal anneal chamber |
| US6297155B1 (en) | 1999-05-03 | 2001-10-02 | Motorola Inc. | Method for forming a copper layer over a semiconductor wafer |
| US6299741B1 (en) | 1999-11-29 | 2001-10-09 | Applied Materials, Inc. | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus |
| JP2001234395A (ja) | 2000-02-28 | 2001-08-31 | Tokyo Electron Ltd | ウェハーめっき装置 |
| US6527920B1 (en) * | 2000-05-10 | 2003-03-04 | Novellus Systems, Inc. | Copper electroplating apparatus |
-
2001
- 2001-05-01 US US09/845,262 patent/US6695962B2/en not_active Expired - Lifetime
-
2002
- 2002-02-06 JP JP2002585704A patent/JP2004530791A/ja active Pending
- 2002-02-06 KR KR1020037014220A patent/KR100834174B1/ko not_active Expired - Lifetime
- 2002-02-06 EP EP02717390A patent/EP1392889A4/en not_active Withdrawn
- 2002-02-06 CN CNB028118448A patent/CN1289712C/zh not_active Expired - Lifetime
- 2002-02-06 WO PCT/US2002/003330 patent/WO2002088431A1/en not_active Ceased
-
2004
- 2004-02-24 US US10/784,191 patent/US20040163963A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110528042A (zh) * | 2019-08-28 | 2019-12-03 | 深圳赛意法微电子有限公司 | 一种半导体器件电镀方法及用于电镀的活化槽 |
| CN110528042B (zh) * | 2019-08-28 | 2021-02-09 | 深圳赛意法微电子有限公司 | 一种半导体器件电镀方法及用于电镀的活化槽 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1529769A (zh) | 2004-09-15 |
| CN1289712C (zh) | 2006-12-13 |
| US20020162750A1 (en) | 2002-11-07 |
| US6695962B2 (en) | 2004-02-24 |
| EP1392889A4 (en) | 2006-10-04 |
| WO2002088431A1 (en) | 2002-11-07 |
| KR20040038912A (ko) | 2004-05-08 |
| US20040163963A1 (en) | 2004-08-26 |
| EP1392889A1 (en) | 2004-03-03 |
| KR100834174B1 (ko) | 2008-05-30 |
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