KR100823043B1 - 집적 회로 및 집적 회로 제조 방법 - Google Patents

집적 회로 및 집적 회로 제조 방법 Download PDF

Info

Publication number
KR100823043B1
KR100823043B1 KR1020010037069A KR20010037069A KR100823043B1 KR 100823043 B1 KR100823043 B1 KR 100823043B1 KR 1020010037069 A KR1020010037069 A KR 1020010037069A KR 20010037069 A KR20010037069 A KR 20010037069A KR 100823043 B1 KR100823043 B1 KR 100823043B1
Authority
KR
South Korea
Prior art keywords
integrated circuit
adhesive pads
conductive
substrate
conductive runners
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010037069A
Other languages
English (en)
Korean (ko)
Other versions
KR20020001632A (ko
Inventor
랸비비안
실링토마스헐버트
Original Assignee
에이저 시스템즈 가디언 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이저 시스템즈 가디언 코포레이션 filed Critical 에이저 시스템즈 가디언 코포레이션
Publication of KR20020001632A publication Critical patent/KR20020001632A/ko
Application granted granted Critical
Publication of KR100823043B1 publication Critical patent/KR100823043B1/ko
Assigned to 에이저 시스템즈 엘엘시 reassignment 에이저 시스템즈 엘엘시 권리의 전부이전등록 Assignors: 에이저 시스템즈 가디언 코포레이션
Assigned to 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 reassignment 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 권리의 전부이전등록 Assignors: 에이저 시스템즈 엘엘시
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor
    • H10P74/277Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2884Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020010037069A 2000-06-27 2001-06-27 집적 회로 및 집적 회로 제조 방법 Expired - Fee Related KR100823043B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/604,519 2000-06-27
US09/604,519 US6833557B1 (en) 2000-06-27 2000-06-27 Integrated circuit and a method of manufacturing an integrated circuit

Publications (2)

Publication Number Publication Date
KR20020001632A KR20020001632A (ko) 2002-01-09
KR100823043B1 true KR100823043B1 (ko) 2008-04-17

Family

ID=24419923

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010037069A Expired - Fee Related KR100823043B1 (ko) 2000-06-27 2001-06-27 집적 회로 및 집적 회로 제조 방법

Country Status (5)

Country Link
US (1) US6833557B1 (https=)
JP (1) JP3944764B2 (https=)
KR (1) KR100823043B1 (https=)
GB (1) GB2368973A (https=)
TW (1) TW512511B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7888672B2 (en) 2002-11-23 2011-02-15 Infineon Technologies Ag Device for detecting stress migration properties
DE10254756B4 (de) * 2002-11-23 2011-07-07 Infineon Technologies AG, 81669 Vorrichtung und Verfahren zur Erfassung von Stressmigrations-Eigenschaften
JP4949733B2 (ja) * 2006-05-11 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置
KR100764660B1 (ko) * 2006-11-01 2007-10-08 삼성전기주식회사 주파수 종속 특성을 가지는 다중 배선의 신호 천이시뮬레이션 방법
DE102014222203B3 (de) * 2014-10-30 2016-03-10 Infineon Technologies Ag Überprüfung von Randschäden
US20190250208A1 (en) * 2018-02-09 2019-08-15 Qualcomm Incorporated Apparatus and method for detecting damage to an integrated circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04199651A (ja) * 1990-11-29 1992-07-20 Fujitsu Ltd 半導体装置およびその製造方法
JPH06177221A (ja) * 1992-12-07 1994-06-24 Fujitsu Ltd 信頼性評価用半導体装置及び信頼性評価用の評価パターンを内蔵した製品lsi、ウエハー
JPH07201855A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387736A (ja) * 1986-09-30 1988-04-19 Nec Corp 半導体装置
JP2842598B2 (ja) * 1988-12-01 1999-01-06 日本電気株式会社 半導体集積回路
JP3269171B2 (ja) * 1993-04-08 2002-03-25 セイコーエプソン株式会社 半導体装置およびそれを有した時計
JP3270807B2 (ja) * 1995-06-29 2002-04-02 シャープ株式会社 テープキャリアパッケージ
KR100190927B1 (ko) * 1996-07-18 1999-06-01 윤종용 슬릿이 형성된 금속막을 구비한 반도체 칩 장치
JP3111938B2 (ja) * 1997-09-16 2000-11-27 日本電気株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04199651A (ja) * 1990-11-29 1992-07-20 Fujitsu Ltd 半導体装置およびその製造方法
JPH06177221A (ja) * 1992-12-07 1994-06-24 Fujitsu Ltd 信頼性評価用半導体装置及び信頼性評価用の評価パターンを内蔵した製品lsi、ウエハー
JPH07201855A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
TW512511B (en) 2002-12-01
US6833557B1 (en) 2004-12-21
JP2002093918A (ja) 2002-03-29
JP3944764B2 (ja) 2007-07-18
KR20020001632A (ko) 2002-01-09
GB0115078D0 (en) 2001-08-15
GB2368973A (en) 2002-05-15

Similar Documents

Publication Publication Date Title
JP5011459B2 (ja) 集積回路の試験方法
US20080128693A1 (en) Reliability test structure for multilevel interconnect
US6066561A (en) Apparatus and method for electrical determination of delamination at one or more interfaces within a semiconductor wafer
US8323991B2 (en) Method for detecting stress migration properties
US6897475B2 (en) Test structure and related methods for evaluating stress-induced voiding
US7247552B2 (en) Integrated circuit having structural support for a flip-chip interconnect pad and method therefor
US9875964B2 (en) Semiconductor device components and methods
US8174010B2 (en) Unified test structure for stress migration tests
KR100823043B1 (ko) 집적 회로 및 집적 회로 제조 방법
US6091080A (en) Evaluation method for wirings of semiconductor device
KR102463139B1 (ko) 켈빈 저항 테스트 구조 및 그 제조 방법
US6864171B1 (en) Via density rules
KR100638042B1 (ko) 캘빈 저항 검사용 패턴 및 이 패턴이 형성된 반도체 장치
Chien et al. A thermal performance measurement method for blind through silicon vias (TSVs) in a 300mm wafer
US6218726B1 (en) Built-in stress pattern on IC dies and method of forming
US6500685B2 (en) Method for evaluating molding material with dams formed on a semiconductor substrate to define slits for capturing fillers contained in the molding material
KR100450260B1 (ko) 박막의 파괴강도 시험방법
US20030155933A1 (en) Dielectric test structure and test method
JP2000243800A (ja) 配線のエレクトロマイグレーション耐性評価方法
JPH06302664A (ja) 検査方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20130320

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20140320

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20160411

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20170412

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20170412

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000