KR100805598B1 - 감방사선성 수지 조성물, 표시 패널용 스페이서 및 표시패널 - Google Patents

감방사선성 수지 조성물, 표시 패널용 스페이서 및 표시패널 Download PDF

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KR100805598B1
KR100805598B1 KR1020050011100A KR20050011100A KR100805598B1 KR 100805598 B1 KR100805598 B1 KR 100805598B1 KR 1020050011100 A KR1020050011100 A KR 1020050011100A KR 20050011100 A KR20050011100 A KR 20050011100A KR 100805598 B1 KR100805598 B1 KR 100805598B1
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다이고 이찌노헤
도모꼬 이와부찌
도시히로 니시오
도오루 가지따
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제이에스알 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D333/72—Benzo[c]thiophenes; Hydrogenated benzo[c]thiophenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
    • C08F20/10—Esters
    • C08F20/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
    • C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Crystal (AREA)
KR1020050011100A 2004-02-13 2005-02-07 감방사선성 수지 조성물, 표시 패널용 스페이서 및 표시패널 KR100805598B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00035973 2004-02-13
JP2004035973A JP4315010B2 (ja) 2004-02-13 2004-02-13 感放射線性樹脂組成物、表示パネル用スペーサーおよび表示パネル

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KR20070070286A KR20070070286A (ko) 2007-07-04
KR100805598B1 true KR100805598B1 (ko) 2008-02-20

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JP (1) JP4315010B2 (zh)
KR (1) KR100805598B1 (zh)
CN (1) CN100538518C (zh)
TW (1) TWI343510B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4448381B2 (ja) * 2004-05-26 2010-04-07 東京応化工業株式会社 感光性組成物
JP4633582B2 (ja) * 2005-09-06 2011-02-16 東京応化工業株式会社 感光性組成物
JP4826415B2 (ja) * 2005-10-12 2011-11-30 東レ株式会社 感光性樹脂組成物
JP4816917B2 (ja) * 2006-03-17 2011-11-16 Ｊｓｒ株式会社 感放射線性樹脂組成物、液晶表示パネル用スペーサー、液晶表示パネル用スペーサーの形成方法、および液晶表示パネル
JP4954650B2 (ja) * 2006-09-14 2012-06-20 太陽ホールディングス株式会社 感光性ペースト組成物及びそれを用いて形成された焼成物パターン
JP4833040B2 (ja) * 2006-11-22 2011-12-07 東京応化工業株式会社 感光性樹脂組成物及び液晶パネル用スペーサ
JP4998735B2 (ja) * 2006-12-28 2012-08-15 Ｊｓｒ株式会社 感放射線性組成物、カラーフィルタ、ブラックマトリックスおよび液晶表示素子
JP4826803B2 (ja) * 2007-03-20 2011-11-30 Ｊｓｒ株式会社 感放射線性樹脂組成物および液晶表示素子用スペーサーとその製造法
KR101121038B1 (ko) * 2008-07-01 2012-03-15 주식회사 엘지화학 복수의 광개시제를 포함한 감광성 수지 조성물, 이를 이용한 투명 박막층 및 액정 표시 장치
KR102006751B1 (ko) 2012-12-11 2019-08-02 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 표시 소자용 경화막, 표시 소자용 경화막의 형성 방법 및 표시 소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940005718A (ko) * 1992-07-24 1994-03-22 마쯔모또 에이이찌 에폭시기 함유 수지 조성물
KR20020073403A (ko) * 2001-03-15 2002-09-26 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 표시 패널용 스페이서, 및 표시패널
KR20030026210A (ko) * 2001-09-25 2003-03-31 제이에스알 가부시끼가이샤 광 확산 반사막 형성용 조성물, 광 확산 반사막의 형성방법 및 광 확산 반사막, 및 액정 표시 소자

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Publication number Priority date Publication date Assignee Title
US4483758A (en) * 1982-01-25 1984-11-20 Polychrome Corporation Method for making a negative working lithographic printing plate
DE3421511A1 (de) * 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Polymerisierbare, perfluoralkylgruppen aufweisende verbindungen, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck
JPH08507563A (ja) * 1993-03-11 1996-08-13 ミネソタ マイニング アンド マニュファクチャリング カンパニー 放射線硬化性アクリレート／シリコーンの恒久的再▲剥▼離性感圧接着剤
JP4117668B2 (ja) * 1999-03-03 2008-07-16 Ｊｓｒ株式会社 感放射線性樹脂組成物
WO2002019034A1 (fr) * 2000-08-29 2002-03-07 Jsr Corporation Composition possedant un indice de refraction sensiblement modifiable par rayonnement et procede pour former un motif d'indice de refraction

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940005718A (ko) * 1992-07-24 1994-03-22 마쯔모또 에이이찌 에폭시기 함유 수지 조성물
KR20020073403A (ko) * 2001-03-15 2002-09-26 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 표시 패널용 스페이서, 및 표시패널
KR20030026210A (ko) * 2001-09-25 2003-03-31 제이에스알 가부시끼가이샤 광 확산 반사막 형성용 조성물, 광 확산 반사막의 형성방법 및 광 확산 반사막, 및 액정 표시 소자

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TWI343510B (en) 2011-06-11
JP2005227525A (ja) 2005-08-25
KR20070070286A (ko) 2007-07-04
CN1655060A (zh) 2005-08-17
CN100538518C (zh) 2009-09-09
TW200535568A (en) 2005-11-01
JP4315010B2 (ja) 2009-08-19

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