KR100780301B1 - 기상 박막 성장 장치의 서셉터 및 그 서셉터를 이용한 기상 박막 성장 장치 - Google Patents
기상 박막 성장 장치의 서셉터 및 그 서셉터를 이용한 기상 박막 성장 장치 Download PDFInfo
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- KR100780301B1 KR100780301B1 KR1020060084219A KR20060084219A KR100780301B1 KR 100780301 B1 KR100780301 B1 KR 100780301B1 KR 1020060084219 A KR1020060084219 A KR 1020060084219A KR 20060084219 A KR20060084219 A KR 20060084219A KR 100780301 B1 KR100780301 B1 KR 100780301B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
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- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
금속 오염량(atoms/㎠) | ||
실시예 | 비교예 | |
Na | 1.1 | 7.1 |
K | <0.1 | 2.4 |
Cr | <0.1 | 1.3 |
Fe | 0.2 | 5.8 |
Co | <0.1 | 2.1 |
Cu | 0.9 | 6.3 |
Zn | <0.1 | <0.1 |
Claims (7)
- 반도체 기판을 상면에 얹어놓아 회전 가능하게 설치된 기상 박막 성장 장치의 서셉터에 있어서, 상기 서셉터 이면 주연부에 상기 이면에서 돌출한 정류부가 설치되어 서셉터 회전 시의 이면을 따라서 그 중심부에서 주연부를 향하여 흐르는 분위기 가스의 기류를 상기 정류부에 의해서 아래쪽으로 유도하는 것을 특징으로 하는 기상 박막 성장 장치의 서셉터.
- 제1항에 있어서, 상기 정류부가 서셉터의 이면 주연부에서 아래쪽으로 돌출한 고리 형상 주벽인 것을 특징으로 하는 기상 박막 성장 장치의 서셉터.
- 제1항 또는 제2항에 있어서, 상기 고리 형상 주벽이 서셉터와 일체로 형성되어 있는 것을 특징으로 하는 기상 박막 성장 장치의 서셉터.
- 제2항에 있어서, 상기 고리 형상 주벽의 내측면이 곡면 형상 또는 경사면 형상으로 형성되어 있는 것을 특징으로 하는 기상 박막 성장 장치.
- 반응로와, 상기 반응로 내에 반도체 기판을 상면에 얹어놓아 회전 가능하게 설치된 서셉터와,상기 서셉터의 이면 주연부에 아래쪽으로 돌출하여 설치된 정류부와,상기 서셉터를 회전시키는 회전 구동 수단과,상기 서셉터의 상면에 얹어놓아진 반도체 기판을 가열하는 가열 수단과,상기 반도체 기판 상에 박막을 형성하기 위한 원료 가스를 포함하는 반응 가스를 상기 반응로 내에 도입하는 도입 수단과,반응로 내의 미반응 가스 등을 배기하는 배기 수단을 구비하며,상기 서셉터의 정류부에 의해서, 서셉터 회전 시에 발생하는 서셉터의 이면을 따라서 그 중심부에서 주연부를 향하여 흐르는 분위기 가스의 기류를 아래쪽으로 유도하도록 구성되는 것을 특징으로 하는 기상 박막 성장 장치.
- 제5항에 있어서, 상기 서셉터 이면의 아래쪽으로 가스 정류용 부재가 배치되며 상기 가스 정류용 부재의 상단부가 상기 서셉터의 정류부에 근접하여 있는 것을 특징으로 하는 기상 박막 성장 장치.
- 제5항 또는 제6항에 있어서, 상기 정류부가 서셉터의 이면 주연부에서 아래쪽으로 돌출한 고리 형상 주벽인 것을 특징으로 하는 기상 박막 성장 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34618699A JP4480056B2 (ja) | 1999-12-06 | 1999-12-06 | 半導体基板の昇降温制御方法とその装置 |
JPJP-P-1999-00346186 | 1999-12-06 | ||
JP36591299A JP4236230B2 (ja) | 1999-12-24 | 1999-12-24 | 気相薄膜成長装置のサセプタおよび該サセプタを用いた気相薄膜成長装置 |
JPJP-P-1999-00365912 | 1999-12-24 |
Related Parent Applications (1)
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KR1020000073217A Division KR100676404B1 (ko) | 1999-12-06 | 2000-12-05 | 반도체 기판의 온도 승강 제어 방법과 그 장치 |
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KR20060104960A KR20060104960A (ko) | 2006-10-09 |
KR100780301B1 true KR100780301B1 (ko) | 2007-11-29 |
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KR1020000073217A KR100676404B1 (ko) | 1999-12-06 | 2000-12-05 | 반도체 기판의 온도 승강 제어 방법과 그 장치 |
KR1020060084219A KR100780301B1 (ko) | 1999-12-06 | 2006-09-01 | 기상 박막 성장 장치의 서셉터 및 그 서셉터를 이용한 기상 박막 성장 장치 |
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KR1020000073217A KR100676404B1 (ko) | 1999-12-06 | 2000-12-05 | 반도체 기판의 온도 승강 제어 방법과 그 장치 |
Country Status (3)
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US (1) | US6461428B2 (ko) |
KR (2) | KR100676404B1 (ko) |
TW (1) | TW487971B (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4330949B2 (ja) * | 2003-07-01 | 2009-09-16 | 東京エレクトロン株式会社 | プラズマcvd成膜方法 |
JP5087238B2 (ja) * | 2006-06-22 | 2012-12-05 | 株式会社ニューフレアテクノロジー | 半導体製造装置の保守方法及び半導体製造方法 |
KR100888651B1 (ko) * | 2006-12-29 | 2009-03-13 | 세메스 주식회사 | 기판을 처리하는 방법 및 장치 |
JP5341706B2 (ja) | 2009-10-16 | 2013-11-13 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
KR101451772B1 (ko) * | 2009-11-02 | 2014-10-16 | 엘아이지에이디피 주식회사 | 화학기상증착장치 및 화학기상증착장치의 온도제어방법 |
KR101365202B1 (ko) * | 2009-11-02 | 2014-02-20 | 엘아이지에이디피 주식회사 | 화학기상증착장치의 온도제어방법 |
KR101062460B1 (ko) * | 2009-12-16 | 2011-09-05 | 엘아이지에이디피 주식회사 | 화학기상증착장치의 온도제어방법 |
JP5802069B2 (ja) * | 2011-06-30 | 2015-10-28 | 株式会社ニューフレアテクノロジー | 気相成長方法及び気相成長装置 |
KR101629770B1 (ko) * | 2013-12-03 | 2016-06-24 | 피에스케이 주식회사 | 온도 보상 방법 및 이를 이용하는 반도체 제조 장치 |
CN108198748B (zh) * | 2014-02-27 | 2022-04-29 | 斯克林集团公司 | 基板处理装置 |
US9765434B2 (en) * | 2014-04-18 | 2017-09-19 | Applied Materials, Inc. | Apparatus for susceptor temperature verification and methods of use |
KR20190005818A (ko) | 2018-12-28 | 2019-01-16 | 주식회사 테스 | 서셉터 어셈블리 및 이를 포함하는 mocvd 장치 |
US20220155148A1 (en) * | 2019-07-26 | 2022-05-19 | Applied Materials, Inc. | Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01278717A (ja) * | 1988-05-02 | 1989-11-09 | Matsushita Electron Corp | 化学気相エピタキシャル成長装置 |
US4986215A (en) | 1988-09-01 | 1991-01-22 | Kyushu Electronic Metal Co., Ltd. | Susceptor for vapor-phase growth system |
KR100845913B1 (ko) * | 2007-07-31 | 2008-07-11 | 주식회사 만도 | 전자제어유닛 고장 검출 시뮬레이터 |
Family Cites Families (2)
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US5873781A (en) * | 1996-11-14 | 1999-02-23 | Bally Gaming International, Inc. | Gaming machine having truly random results |
US6015465A (en) * | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
-
2000
- 2000-12-05 US US09/729,669 patent/US6461428B2/en not_active Expired - Lifetime
- 2000-12-05 KR KR1020000073217A patent/KR100676404B1/ko not_active IP Right Cessation
- 2000-12-06 TW TW089125967A patent/TW487971B/zh not_active IP Right Cessation
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2006
- 2006-09-01 KR KR1020060084219A patent/KR100780301B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01278717A (ja) * | 1988-05-02 | 1989-11-09 | Matsushita Electron Corp | 化学気相エピタキシャル成長装置 |
US4986215A (en) | 1988-09-01 | 1991-01-22 | Kyushu Electronic Metal Co., Ltd. | Susceptor for vapor-phase growth system |
KR100845913B1 (ko) * | 2007-07-31 | 2008-07-11 | 주식회사 만도 | 전자제어유닛 고장 검출 시뮬레이터 |
Also Published As
Publication number | Publication date |
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KR100676404B1 (ko) | 2007-01-31 |
US20010020439A1 (en) | 2001-09-13 |
US6461428B2 (en) | 2002-10-08 |
TW487971B (en) | 2002-05-21 |
KR20060104960A (ko) | 2006-10-09 |
KR20010062124A (ko) | 2001-07-07 |
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