KR100777850B1 - 어레이 기판 및 평면 표시 장치 - Google Patents

어레이 기판 및 평면 표시 장치 Download PDF

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Publication number
KR100777850B1
KR100777850B1 KR1020040086220A KR20040086220A KR100777850B1 KR 100777850 B1 KR100777850 B1 KR 100777850B1 KR 1020040086220 A KR1020040086220 A KR 1020040086220A KR 20040086220 A KR20040086220 A KR 20040086220A KR 100777850 B1 KR100777850 B1 KR 100777850B1
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KR
South Korea
Prior art keywords
array substrate
display device
gate electrode
electrode wiring
pixels
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Expired - Fee Related
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KR1020040086220A
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English (en)
Korean (ko)
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KR20050040763A (ko
Inventor
다바따께히로시
가와무라데쯔야
가와무라신이찌
이나다가쯔히꼬
다께다아쯔시
이마이노부오
다까미아끼히로
Original Assignee
도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드
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Application filed by 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 filed Critical 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드
Publication of KR20050040763A publication Critical patent/KR20050040763A/ko
Application granted granted Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1020040086220A 2003-10-28 2004-10-27 어레이 기판 및 평면 표시 장치 Expired - Fee Related KR100777850B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003367276A JP4319517B2 (ja) 2003-10-28 2003-10-28 アレイ基板および平面表示装置
JPJP-P-2003-00367276 2003-10-28

Publications (2)

Publication Number Publication Date
KR20050040763A KR20050040763A (ko) 2005-05-03
KR100777850B1 true KR100777850B1 (ko) 2007-11-21

Family

ID=34645329

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040086220A Expired - Fee Related KR100777850B1 (ko) 2003-10-28 2004-10-27 어레이 기판 및 평면 표시 장치

Country Status (6)

Country Link
US (1) US7564511B2 (https=)
JP (1) JP4319517B2 (https=)
KR (1) KR100777850B1 (https=)
CN (1) CN100397157C (https=)
SG (1) SG111282A1 (https=)
TW (1) TW200527053A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5514418B2 (ja) * 2008-09-05 2014-06-04 株式会社ジャパンディスプレイ 液晶表示装置
CN103217843B (zh) * 2013-03-25 2016-02-17 京东方科技集团股份有限公司 阵列基板及其制造方法和液晶面板
JP2015072434A (ja) * 2013-10-04 2015-04-16 株式会社ジャパンディスプレイ 液晶表示装置
CN105185740B (zh) * 2015-06-26 2019-01-15 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示面板和显示装置
JP6947550B2 (ja) * 2017-06-27 2021-10-13 株式会社ジャパンディスプレイ 表示装置
CN111554730B (zh) * 2020-06-09 2022-12-02 云谷（固安）科技有限公司 一种显示面板及显示装置
CN114578624B (zh) * 2021-12-29 2023-01-17 滁州惠科光电科技有限公司 阵列基板及显示面板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06332008A (ja) * 1993-05-25 1994-12-02 Matsushita Electric Ind Co Ltd アクティブマトリクス基板とその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69202893T2 (de) * 1991-03-20 1995-11-02 Toshiba Kawasaki Kk Flüssigkristall-Anzeigevorrichtung.
CN100414411C (zh) * 1995-10-03 2008-08-27 精工爱普生株式会社 有源矩阵基板的制造方法和薄膜元件的制造方法
JP3072707B2 (ja) 1995-10-31 2000-08-07 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 液晶表示装置及びその製造方法
JP3006584B2 (ja) * 1998-05-14 2000-02-07 日本電気株式会社 薄膜トランジスタアレイ
KR100430773B1 (ko) * 1998-07-14 2004-05-10 가부시끼가이샤 도시바 액티브 매트릭스형 액정표시장치
KR100695303B1 (ko) * 2000-10-31 2007-03-14 삼성전자주식회사 제어 신호부 및 그 제조 방법과 이를 포함하는 액정 표시장치 및 그 제조 방법
TW588179B (en) * 2001-07-25 2004-05-21 Hannstar Display Corp Substrate structure for thin film transistor array
JP2003110019A (ja) 2001-10-01 2003-04-11 Ricoh Co Ltd 半導体装置
JP4082493B2 (ja) * 2002-06-06 2008-04-30 株式会社 日立ディスプレイズ 液晶表示装置
JP2004054069A (ja) * 2002-07-23 2004-02-19 Advanced Display Inc 表示装置及び表示装置の断線修復方法
JP3791517B2 (ja) * 2002-10-31 2006-06-28 セイコーエプソン株式会社 電気光学装置及び電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06332008A (ja) * 1993-05-25 1994-12-02 Matsushita Electric Ind Co Ltd アクティブマトリクス基板とその製造方法

Also Published As

Publication number Publication date
US20050140570A1 (en) 2005-06-30
JP2005134446A (ja) 2005-05-26
KR20050040763A (ko) 2005-05-03
SG111282A1 (en) 2005-05-30
CN1612004A (zh) 2005-05-04
TW200527053A (en) 2005-08-16
TWI294052B (https=) 2008-03-01
JP4319517B2 (ja) 2009-08-26
US7564511B2 (en) 2009-07-21
CN100397157C (zh) 2008-06-25

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