KR100772892B1 - 플로팅 확산 영역의 커패시턴스를 제어할 수 있는 공유픽셀형 이미지 센서 - Google Patents

플로팅 확산 영역의 커패시턴스를 제어할 수 있는 공유픽셀형 이미지 센서 Download PDF

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KR100772892B1
KR100772892B1 KR1020060004116A KR20060004116A KR100772892B1 KR 100772892 B1 KR100772892 B1 KR 100772892B1 KR 1020060004116 A KR1020060004116 A KR 1020060004116A KR 20060004116 A KR20060004116 A KR 20060004116A KR 100772892 B1 KR100772892 B1 KR 100772892B1
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active
gate
floating diffusion
dual lobe
read
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Korean (ko)
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KR20070075629A (ko
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백기현
이석하
이강복
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삼성전자주식회사
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Priority to KR1020060004116A priority Critical patent/KR100772892B1/ko
Priority to US11/652,602 priority patent/US8264579B2/en
Priority to JP2007004447A priority patent/JP4953299B2/ja
Priority to TW096101401A priority patent/TWI371102B/zh
Publication of KR20070075629A publication Critical patent/KR20070075629A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020060004116A 2006-01-13 2006-01-13 플로팅 확산 영역의 커패시턴스를 제어할 수 있는 공유픽셀형 이미지 센서 Expired - Fee Related KR100772892B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020060004116A KR100772892B1 (ko) 2006-01-13 2006-01-13 플로팅 확산 영역의 커패시턴스를 제어할 수 있는 공유픽셀형 이미지 센서
US11/652,602 US8264579B2 (en) 2006-01-13 2007-01-12 Shared-pixel-type image sensors for controlling capacitance of floating diffusion region
JP2007004447A JP4953299B2 (ja) 2006-01-13 2007-01-12 共有ピクセル型イメージセンサ
TW096101401A TWI371102B (en) 2006-01-13 2007-01-15 Shared-pixel-type image sensors for controlling capacitance of floating diffusion region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060004116A KR100772892B1 (ko) 2006-01-13 2006-01-13 플로팅 확산 영역의 커패시턴스를 제어할 수 있는 공유픽셀형 이미지 센서

Publications (2)

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KR20070075629A KR20070075629A (ko) 2007-07-24
KR100772892B1 true KR100772892B1 (ko) 2007-11-05

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Country Status (4)

Country Link
US (1) US8264579B2 (enExample)
JP (1) JP4953299B2 (enExample)
KR (1) KR100772892B1 (enExample)
TW (1) TWI371102B (enExample)

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KR101503682B1 (ko) * 2008-04-18 2015-03-20 삼성전자 주식회사 공유 픽셀형 이미지 센서 및 그 제조 방법
US9357148B2 (en) 2009-01-15 2016-05-31 Sony Corporation Solid-state imaging device and electronic apparatus

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JP2009038263A (ja) * 2007-08-02 2009-02-19 Sharp Corp 固体撮像素子および電子情報機器
JP5187550B2 (ja) * 2007-08-21 2013-04-24 ソニー株式会社 撮像装置
US20090102211A1 (en) * 2007-10-22 2009-04-23 Amir Antar Portable pet waste receptacle
KR100853194B1 (ko) * 2007-10-29 2008-08-21 (주)실리콘화일 4ｔ－2ｓ 스텝 ＆ 리피트 단위 셀
JP5292787B2 (ja) 2007-11-30 2013-09-18 ソニー株式会社 固体撮像装置及びカメラ
JP5142749B2 (ja) 2008-02-14 2013-02-13 キヤノン株式会社 撮像装置、撮像装置の制御方法及び撮像システム
JP5506683B2 (ja) * 2008-08-11 2014-05-28 本田技研工業株式会社 画素、画素の製造方法、撮像装置および画像形成方法
US8350939B2 (en) 2008-10-01 2013-01-08 Micron Technology, Inc. Vertical 4-way shared pixel in a single column with internal reset and no row select
TWI433307B (zh) * 2008-10-22 2014-04-01 Sony Corp 固態影像感測器、其驅動方法、成像裝置及電子器件
JP5374110B2 (ja) 2008-10-22 2013-12-25 キヤノン株式会社 撮像センサ及び撮像装置
US8130302B2 (en) * 2008-11-07 2012-03-06 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits
US8338868B2 (en) 2008-12-03 2012-12-25 Electronics And Telecommunications Research Institute Shared photodiode image sensor
JP2011023917A (ja) * 2009-07-15 2011-02-03 Nikon Corp 固体撮像素子
KR101652933B1 (ko) * 2010-02-17 2016-09-02 삼성전자주식회사 센서, 이의 동작 방법, 및 이를 포함하는 거리 측정 장치
US20110205384A1 (en) * 2010-02-24 2011-08-25 Panavision Imaging, Llc Variable active image area image sensor
JP5644177B2 (ja) 2010-05-07 2014-12-24 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5458043B2 (ja) * 2011-03-08 2014-04-02 株式会社東芝 固体撮像装置
JP6003291B2 (ja) 2011-08-22 2016-10-05 ソニー株式会社 固体撮像装置及び電子機器
KR20130038035A (ko) * 2011-10-07 2013-04-17 삼성전자주식회사 촬상소자
JP2013157883A (ja) 2012-01-31 2013-08-15 Sony Corp 固体撮像素子およびカメラシステム
TWI696278B (zh) 2015-03-31 2020-06-11 日商新力股份有限公司 影像感測器、攝像裝置及電子機器
KR102406996B1 (ko) * 2017-04-07 2022-06-08 삼성전자주식회사 이미지 센서
JP6536627B2 (ja) * 2017-06-07 2019-07-03 ソニー株式会社 固体撮像装置及び電子機器
CN115332276A (zh) * 2017-06-21 2022-11-11 索尼半导体解决方案公司 成像元件、层叠式成像元件和固态成像装置
KR102591525B1 (ko) * 2018-05-28 2023-10-23 에스케이하이닉스 주식회사 공통 선택 트랜지스터를 가진 유닛 픽셀 블록을 포함하는 이미지 센서
US10510796B1 (en) * 2018-06-14 2019-12-17 Omnivision Technologies, Inc. Small pixels having dual conversion gain providing high dynamic range
KR102856412B1 (ko) 2020-09-28 2025-09-05 에스케이하이닉스 주식회사 이미지 센싱 장치
KR102834447B1 (ko) * 2020-09-29 2025-07-15 에스케이하이닉스 주식회사 이미지 센싱 장치
CN114690156B (zh) * 2020-12-31 2022-12-20 武汉市聚芯微电子有限责任公司 一种飞行时间传感单元、传感器及其解调方法

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JP4455435B2 (ja) * 2004-08-04 2010-04-21 キヤノン株式会社 固体撮像装置及び同固体撮像装置を用いたカメラ
KR100657863B1 (ko) * 2005-02-07 2006-12-14 삼성전자주식회사 핑거드 타입 소스 폴로워 트랜지스터를 이용한 상보성금속 산화막 반도체 액티브 픽셀 센서
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KR101503682B1 (ko) * 2008-04-18 2015-03-20 삼성전자 주식회사 공유 픽셀형 이미지 센서 및 그 제조 방법
US9357148B2 (en) 2009-01-15 2016-05-31 Sony Corporation Solid-state imaging device and electronic apparatus
US9543341B2 (en) 2009-01-15 2017-01-10 Sony Corporation Solid-state imaging device and electronic apparatus
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Publication number Publication date
KR20070075629A (ko) 2007-07-24
US20070164332A1 (en) 2007-07-19
TW200729471A (en) 2007-08-01
JP2007189696A (ja) 2007-07-26
US8264579B2 (en) 2012-09-11
TWI371102B (en) 2012-08-21
JP4953299B2 (ja) 2012-06-13

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