TWI371102B - Shared-pixel-type image sensors for controlling capacitance of floating diffusion region - Google Patents
Shared-pixel-type image sensors for controlling capacitance of floating diffusion regionInfo
- Publication number
- TWI371102B TWI371102B TW096101401A TW96101401A TWI371102B TW I371102 B TWI371102 B TW I371102B TW 096101401 A TW096101401 A TW 096101401A TW 96101401 A TW96101401 A TW 96101401A TW I371102 B TWI371102 B TW I371102B
- Authority
- TW
- Taiwan
- Prior art keywords
- pixel
- shared
- diffusion region
- image sensors
- floating diffusion
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060004116A KR100772892B1 (ko) | 2006-01-13 | 2006-01-13 | 플로팅 확산 영역의 커패시턴스를 제어할 수 있는 공유픽셀형 이미지 센서 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200729471A TW200729471A (en) | 2007-08-01 |
TWI371102B true TWI371102B (en) | 2012-08-21 |
Family
ID=38262363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096101401A TWI371102B (en) | 2006-01-13 | 2007-01-15 | Shared-pixel-type image sensors for controlling capacitance of floating diffusion region |
Country Status (4)
Country | Link |
---|---|
US (1) | US8264579B2 (zh) |
JP (1) | JP4953299B2 (zh) |
KR (1) | KR100772892B1 (zh) |
TW (1) | TWI371102B (zh) |
Families Citing this family (31)
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JP2008235350A (ja) * | 2007-03-16 | 2008-10-02 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
JP2009038263A (ja) * | 2007-08-02 | 2009-02-19 | Sharp Corp | 固体撮像素子および電子情報機器 |
JP5187550B2 (ja) * | 2007-08-21 | 2013-04-24 | ソニー株式会社 | 撮像装置 |
US20090102211A1 (en) * | 2007-10-22 | 2009-04-23 | Amir Antar | Portable pet waste receptacle |
KR100853194B1 (ko) * | 2007-10-29 | 2008-08-21 | (주)실리콘화일 | 4t-2s 스텝 & 리피트 단위 셀 |
JP5292787B2 (ja) | 2007-11-30 | 2013-09-18 | ソニー株式会社 | 固体撮像装置及びカメラ |
JP5142749B2 (ja) | 2008-02-14 | 2013-02-13 | キヤノン株式会社 | 撮像装置、撮像装置の制御方法及び撮像システム |
KR101503682B1 (ko) * | 2008-04-18 | 2015-03-20 | 삼성전자 주식회사 | 공유 픽셀형 이미지 센서 및 그 제조 방법 |
EP2320460B1 (en) * | 2008-08-11 | 2013-03-13 | Honda Motor Co., Ltd. | Pixel, pixel forming method, imaging device and image forming method |
US8350939B2 (en) | 2008-10-01 | 2013-01-08 | Micron Technology, Inc. | Vertical 4-way shared pixel in a single column with internal reset and no row select |
TWI433307B (zh) * | 2008-10-22 | 2014-04-01 | Sony Corp | 固態影像感測器、其驅動方法、成像裝置及電子器件 |
JP5374110B2 (ja) | 2008-10-22 | 2013-12-25 | キヤノン株式会社 | 撮像センサ及び撮像装置 |
US8130302B2 (en) * | 2008-11-07 | 2012-03-06 | Aptina Imaging Corporation | Methods and apparatus providing selective binning of pixel circuits |
US8338868B2 (en) | 2008-12-03 | 2012-12-25 | Electronics And Telecommunications Research Institute | Shared photodiode image sensor |
JP5029624B2 (ja) | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP2011023917A (ja) * | 2009-07-15 | 2011-02-03 | Nikon Corp | 固体撮像素子 |
KR101652933B1 (ko) * | 2010-02-17 | 2016-09-02 | 삼성전자주식회사 | 센서, 이의 동작 방법, 및 이를 포함하는 거리 측정 장치 |
US20110205384A1 (en) * | 2010-02-24 | 2011-08-25 | Panavision Imaging, Llc | Variable active image area image sensor |
JP5644177B2 (ja) | 2010-05-07 | 2014-12-24 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
JP5458043B2 (ja) * | 2011-03-08 | 2014-04-02 | 株式会社東芝 | 固体撮像装置 |
JP6003291B2 (ja) * | 2011-08-22 | 2016-10-05 | ソニー株式会社 | 固体撮像装置及び電子機器 |
KR20130038035A (ko) * | 2011-10-07 | 2013-04-17 | 삼성전자주식회사 | 촬상소자 |
JP2013157883A (ja) | 2012-01-31 | 2013-08-15 | Sony Corp | 固体撮像素子およびカメラシステム |
TWI696278B (zh) | 2015-03-31 | 2020-06-11 | 日商新力股份有限公司 | 影像感測器、攝像裝置及電子機器 |
KR102406996B1 (ko) * | 2017-04-07 | 2022-06-08 | 삼성전자주식회사 | 이미지 센서 |
JP6536627B2 (ja) * | 2017-06-07 | 2019-07-03 | ソニー株式会社 | 固体撮像装置及び電子機器 |
KR102591525B1 (ko) * | 2018-05-28 | 2023-10-23 | 에스케이하이닉스 주식회사 | 공통 선택 트랜지스터를 가진 유닛 픽셀 블록을 포함하는 이미지 센서 |
US10510796B1 (en) * | 2018-06-14 | 2019-12-17 | Omnivision Technologies, Inc. | Small pixels having dual conversion gain providing high dynamic range |
KR20220042813A (ko) | 2020-09-28 | 2022-04-05 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
KR20220043449A (ko) * | 2020-09-29 | 2022-04-05 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
CN114690156B (zh) * | 2020-12-31 | 2022-12-20 | 武汉市聚芯微电子有限责任公司 | 一种飞行时间传感单元、传感器及其解调方法 |
Family Cites Families (16)
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US6107655A (en) * | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
US6320474B1 (en) * | 1998-12-28 | 2001-11-20 | Interchip Corporation | MOS-type capacitor and integrated circuit VCO using same |
US6657665B1 (en) | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
KR100504562B1 (ko) | 2001-07-18 | 2005-08-03 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서 |
US7075049B2 (en) | 2003-06-11 | 2006-07-11 | Micron Technology, Inc. | Dual conversion gain imagers |
US20050128327A1 (en) * | 2003-12-10 | 2005-06-16 | Bencuya Selim S. | Device and method for image sensing |
JP2005217302A (ja) | 2004-01-30 | 2005-08-11 | Sony Corp | 固体撮像装置 |
US7087883B2 (en) * | 2004-02-04 | 2006-08-08 | Omnivision Technologies, Inc. | CMOS image sensor using shared transistors between pixels with dual pinned photodiode |
JP4553612B2 (ja) | 2004-03-18 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 撮像素子およびそれを備えた撮像装置 |
KR101003246B1 (ko) * | 2004-04-28 | 2010-12-21 | 크로스텍 캐피탈, 엘엘씨 | Cmos 이미지센서 |
JP2006005711A (ja) * | 2004-06-18 | 2006-01-05 | Iwate Toshiba Electronics Co Ltd | Cmosイメージセンサ |
KR20060000321A (ko) * | 2004-06-28 | 2006-01-06 | (주)그래픽테크노재팬 | Cmos 이미지센서 |
JP4455435B2 (ja) * | 2004-08-04 | 2010-04-21 | キヤノン株式会社 | 固体撮像装置及び同固体撮像装置を用いたカメラ |
KR100657863B1 (ko) * | 2005-02-07 | 2006-12-14 | 삼성전자주식회사 | 핑거드 타입 소스 폴로워 트랜지스터를 이용한 상보성금속 산화막 반도체 액티브 픽셀 센서 |
US7830437B2 (en) * | 2005-05-11 | 2010-11-09 | Aptina Imaging Corp. | High fill factor multi-way shared pixel |
KR100690912B1 (ko) * | 2005-08-12 | 2007-03-09 | 삼성전자주식회사 | 전하 전송 특성이 향상된 4 공유 픽셀형 이미지 센서 |
-
2006
- 2006-01-13 KR KR1020060004116A patent/KR100772892B1/ko not_active IP Right Cessation
-
2007
- 2007-01-12 JP JP2007004447A patent/JP4953299B2/ja not_active Expired - Fee Related
- 2007-01-12 US US11/652,602 patent/US8264579B2/en not_active Expired - Fee Related
- 2007-01-15 TW TW096101401A patent/TWI371102B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US8264579B2 (en) | 2012-09-11 |
JP2007189696A (ja) | 2007-07-26 |
KR20070075629A (ko) | 2007-07-24 |
US20070164332A1 (en) | 2007-07-19 |
TW200729471A (en) | 2007-08-01 |
KR100772892B1 (ko) | 2007-11-05 |
JP4953299B2 (ja) | 2012-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |