KR100761369B1 - 온도변화 적응형 내부 전원 발생 장치 - Google Patents
온도변화 적응형 내부 전원 발생 장치 Download PDFInfo
- Publication number
- KR100761369B1 KR100761369B1 KR1020050027398A KR20050027398A KR100761369B1 KR 100761369 B1 KR100761369 B1 KR 100761369B1 KR 1020050027398 A KR1020050027398 A KR 1020050027398A KR 20050027398 A KR20050027398 A KR 20050027398A KR 100761369 B1 KR100761369 B1 KR 100761369B1
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- KR
- South Korea
- Prior art keywords
- reference voltage
- temperature
- internal power
- voltage
- internal
- Prior art date
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Dram (AREA)
- Control Of Electrical Variables (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
Description
Claims (2)
- 외부전원을 다운컨버팅하여 내부전원을 발생하는 내부전원 구동장치에 있어서,기준전압과 내부전원단으로부터 피드백된 피드백전압을 비교하기 위한 비교수단;상기 비교수단의 출력신호에 응답하여 상기 내부전원단을 풀업 구동하기 위한 구동수단; 및온도 독립 기준전압, 온도보상 기준전압, 온도비례 기준전압 각각에 제어받아 상기 비교수단에 바이어스 전류를 제공하기 위한 다수의 바이어스 수단을 구비하는 내부전원 구동장치.
- 제1항에 있어서,상기 다수의 바이어스 수단은,상기 온도 독립 기준전압을 게이트 입력으로 하는 제1 NMOS 트랜지스터와,상기 온도보상 기준전압을 게이트 입력으로 하는 제2 NMOS 트랜지스터와,상기 온도비례 기준전압을 게이트 입력으로 하는 제3 NMOS 트랜지스터를 구비하며, 상기 제1 내지 제3 NMOS 트랜지스터는 서로 병렬연결된 것을 특징으로 하는 내부전원 구동장치.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050027398A KR100761369B1 (ko) | 2005-03-31 | 2005-03-31 | 온도변화 적응형 내부 전원 발생 장치 |
US11/319,299 US7420358B2 (en) | 2005-03-31 | 2005-12-27 | Internal voltage generating apparatus adaptive to temperature change |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050027398A KR100761369B1 (ko) | 2005-03-31 | 2005-03-31 | 온도변화 적응형 내부 전원 발생 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060104899A KR20060104899A (ko) | 2006-10-09 |
KR100761369B1 true KR100761369B1 (ko) | 2007-09-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020050027398A KR100761369B1 (ko) | 2005-03-31 | 2005-03-31 | 온도변화 적응형 내부 전원 발생 장치 |
Country Status (2)
Country | Link |
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US (1) | US7420358B2 (ko) |
KR (1) | KR100761369B1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100806609B1 (ko) * | 2006-11-02 | 2008-02-25 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 온도 정보 출력장치 |
KR100803514B1 (ko) * | 2007-02-16 | 2008-02-14 | 매그나칩 반도체 유한회사 | 반도체 소자의 전압 레귤레이터 |
KR100924353B1 (ko) * | 2008-03-28 | 2009-11-02 | 주식회사 하이닉스반도체 | 내부전압 발생 장치 |
US8821012B2 (en) | 2011-08-31 | 2014-09-02 | Semiconductor Components Industries, Llc | Combined device identification and temperature measurement |
US8845189B2 (en) * | 2011-08-31 | 2014-09-30 | Semiconductor Components Industries, Llc | Device identification and temperature sensor circuit |
US9110484B2 (en) * | 2013-09-24 | 2015-08-18 | Freescale Semiconductor, Inc. | Temperature dependent biasing for leakage power reduction |
TWI491857B (zh) * | 2014-04-09 | 2015-07-11 | Univ Nat Sun Yat Sen | Temperature sensing means |
CN107390767B (zh) * | 2017-08-02 | 2018-08-17 | 东南大学 | 一种具有温度补偿的宽温度全mos电压基准源 |
KR20230112326A (ko) * | 2022-01-20 | 2023-07-27 | 에스케이하이닉스 주식회사 | 온도 변화에도 기준 전류 혹은 기준 전압을 생성하는 반도체 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62260355A (ja) * | 1986-05-06 | 1987-11-12 | Toshiba Corp | 半導体集積回路装置 |
US4778576A (en) | 1986-07-31 | 1988-10-18 | The Dow Chemical Company | Nickel alloy anodes for electrochemical dechlorination |
JP2000011649A (ja) * | 1998-06-26 | 2000-01-14 | Mitsubishi Electric Corp | 半導体装置 |
JP2000011671A (ja) | 1998-06-29 | 2000-01-14 | Hitachi Ltd | 半導体記憶装置 |
JP3954245B2 (ja) | 1999-07-22 | 2007-08-08 | 株式会社東芝 | 電圧発生回路 |
JP2002032988A (ja) * | 2000-07-18 | 2002-01-31 | Mitsubishi Electric Corp | 内部電圧発生回路 |
KR100400304B1 (ko) | 2000-12-27 | 2003-10-01 | 주식회사 하이닉스반도체 | 커런트 미러형의 밴드갭 기준전압 발생장치 |
US7009904B2 (en) | 2003-11-19 | 2006-03-07 | Infineon Technologies Ag | Back-bias voltage generator with temperature control |
US7266031B2 (en) | 2003-11-19 | 2007-09-04 | Infineon Technologies Ag | Internal voltage generator with temperature control |
DE102004005667B4 (de) | 2004-02-05 | 2006-02-09 | Infineon Technologies Ag | Integrierter Halbleiterspeicher mit temperaturabhängiger Spannungserzeugung und Verfahren zum Betrieb |
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2005
- 2005-03-31 KR KR1020050027398A patent/KR100761369B1/ko active IP Right Grant
- 2005-12-27 US US11/319,299 patent/US7420358B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7420358B2 (en) | 2008-09-02 |
KR20060104899A (ko) | 2006-10-09 |
US20060220633A1 (en) | 2006-10-05 |
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