KR100749169B1 - 플라즈마처리장치 - Google Patents

플라즈마처리장치 Download PDF

Info

Publication number
KR100749169B1
KR100749169B1 KR1020060082851A KR20060082851A KR100749169B1 KR 100749169 B1 KR100749169 B1 KR 100749169B1 KR 1020060082851 A KR1020060082851 A KR 1020060082851A KR 20060082851 A KR20060082851 A KR 20060082851A KR 100749169 B1 KR100749169 B1 KR 100749169B1
Authority
KR
South Korea
Prior art keywords
voltage
electrode
phase
measuring circuit
electrostatic chuck
Prior art date
Application number
KR1020060082851A
Other languages
English (en)
Korean (ko)
Inventor
료지 니시오
츠토무 이이다
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Application granted granted Critical
Publication of KR100749169B1 publication Critical patent/KR100749169B1/ko

Links

Images

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020060082851A 2006-04-07 2006-08-30 플라즈마처리장치 KR100749169B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00105816 2006-04-07
JP2006105816A JP4928817B2 (ja) 2006-04-07 2006-04-07 プラズマ処理装置

Publications (1)

Publication Number Publication Date
KR100749169B1 true KR100749169B1 (ko) 2007-08-14

Family

ID=38573890

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060082851A KR100749169B1 (ko) 2006-04-07 2006-08-30 플라즈마처리장치

Country Status (3)

Country Link
US (1) US20070235135A1 (ja)
JP (1) JP4928817B2 (ja)
KR (1) KR100749169B1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009078949A2 (en) * 2007-12-13 2009-06-25 Lam Research Corporation Method for using an rc circuit to model trapped charge in an electrostatic chuck

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4920991B2 (ja) 2006-02-22 2012-04-18 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2008277275A (ja) * 2007-03-30 2008-11-13 Tokyo Electron Ltd プラズマ処理装置、計測装置、計測方法および制御装置
US8241457B2 (en) 2007-03-30 2012-08-14 Tokyo Electron Limited Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
JP5711953B2 (ja) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9530617B2 (en) * 2013-01-30 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. In-situ charging neutralization
KR102498784B1 (ko) * 2014-12-11 2023-02-09 어플라이드 머티어리얼스, 인코포레이티드 고온 rf 애플리케이션들을 위한 정전 척
KR102159894B1 (ko) * 2016-11-30 2020-09-24 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치
US10435789B2 (en) * 2016-12-06 2019-10-08 Asm Ip Holding B.V. Substrate treatment apparatus
JP2021103641A (ja) * 2019-12-25 2021-07-15 東京エレクトロン株式会社 プラズマ発生源の検査方法及び負荷

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08335567A (ja) * 1995-06-07 1996-12-17 Tokyo Electron Ltd プラズマ処理装置
JPH0927395A (ja) * 1995-07-12 1997-01-28 Kobe Steel Ltd プラズマ処理装置及び該装置を用いたプラズマ処理方法
JP2002270577A (ja) 2001-03-07 2002-09-20 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
KR20050010517A (ko) * 2002-06-17 2005-01-27 미츠비시 쥬고교 가부시키가이샤 웨이퍼 전위 또는 온도의 측정방법 및 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0723548B2 (ja) * 1988-05-27 1995-03-15 日本電気株式会社 ドライエッチングの終点検出方法
US5467013A (en) * 1993-12-07 1995-11-14 Sematech, Inc. Radio frequency monitor for semiconductor process control
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
JP3959200B2 (ja) * 1999-03-19 2007-08-15 株式会社東芝 半導体装置の製造装置
US6563076B1 (en) * 1999-09-30 2003-05-13 Lam Research Corporation Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor
JP4590031B2 (ja) * 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
JP3621900B2 (ja) * 2000-09-12 2005-02-16 株式会社日立製作所 プラズマ処理装置および方法
JP3665265B2 (ja) * 2000-12-28 2005-06-29 株式会社日立製作所 プラズマ処理装置
JP4676189B2 (ja) * 2004-11-02 2011-04-27 東京エレクトロン株式会社 高周波給電装置及びプラズマ処理装置
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
JP5150053B2 (ja) * 2006-02-03 2013-02-20 株式会社日立ハイテクノロジーズ プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08335567A (ja) * 1995-06-07 1996-12-17 Tokyo Electron Ltd プラズマ処理装置
JPH0927395A (ja) * 1995-07-12 1997-01-28 Kobe Steel Ltd プラズマ処理装置及び該装置を用いたプラズマ処理方法
JP2002270577A (ja) 2001-03-07 2002-09-20 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
KR20050010517A (ko) * 2002-06-17 2005-01-27 미츠비시 쥬고교 가부시키가이샤 웨이퍼 전위 또는 온도의 측정방법 및 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009078949A2 (en) * 2007-12-13 2009-06-25 Lam Research Corporation Method for using an rc circuit to model trapped charge in an electrostatic chuck
WO2009078949A3 (en) * 2007-12-13 2009-10-01 Lam Research Corporation Method for using an rc circuit to model trapped charge in an electrostatic chuck
US8055489B2 (en) 2007-12-13 2011-11-08 Lam Research Corporation Method for using an RC circuit to model trapped charge in an electrostatic chuck

Also Published As

Publication number Publication date
JP2007281205A (ja) 2007-10-25
JP4928817B2 (ja) 2012-05-09
US20070235135A1 (en) 2007-10-11

Similar Documents

Publication Publication Date Title
KR100749169B1 (ko) 플라즈마처리장치
KR100838749B1 (ko) 공진대책 기능을 가지는 플라즈마처리장치
US7019543B2 (en) Impedance monitoring system and method
JP3977114B2 (ja) プラズマ処理装置
JP3937453B2 (ja) プラズマ中のイオン流の測定方法及び装置
US8901935B2 (en) Methods and apparatus for detecting the confinement state of plasma in a plasma processing system
US7737706B2 (en) Method and apparatus for inspecting process performance for use in a plasma processing apparatus
KR100532523B1 (ko) 플라즈마를 사용하여 반도체 웨이퍼를 처리하는반도체제조장치 및 처리방법 및 웨이퍼 전위프로브
US5339039A (en) Langmuir probe system for radio frequency excited plasma processing system
US8193097B2 (en) Plasma processing apparatus and impedance adjustment method
US6714033B1 (en) Probe for direct wafer potential measurements
JP4728405B2 (ja) 表面処理装置
KR100838750B1 (ko) 플라즈마처리장치 및 플라즈마처리방법
JP2010016124A (ja) プラズマ処理装置およびプラズマ処理方法
CN110416049A (zh) 可调节边缘射频等离子体分布的ccp刻蚀装置及其方法
WO2003083911A1 (en) A system and method for determining the state of a film in a plasma reactor using an electrical property
JP2008513940A (ja) プラズマの励起電流の特性を測定するためのプローブ、および関連するプラズマ反応器
JP2002063999A (ja) プラズマ電位測定方法と測定用プローブ
CN112345814A (zh) 直流偏压检测方法、装置、治具以及下电极系统
KR101177377B1 (ko) 보조 이중 프로브가 구비된 플라즈마 진단장치
JP2004079929A (ja) プラズマリーク監視方法，プラズマ処理装置およびプラズマ処理方法
JP2007115867A (ja) プラズマ処理装置およびプラズマ処理装置の制御方法

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120724

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20130722

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee