US20070235135A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
US20070235135A1
US20070235135A1 US11/513,233 US51323306A US2007235135A1 US 20070235135 A1 US20070235135 A1 US 20070235135A1 US 51323306 A US51323306 A US 51323306A US 2007235135 A1 US2007235135 A1 US 2007235135A1
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Prior art keywords
voltage
electrode
measurement circuit
lower electrode
wafer
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US11/513,233
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English (en)
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Ryoji Nishio
Tsutomu Iida
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication of US20070235135A1 publication Critical patent/US20070235135A1/en
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    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Definitions

  • the present invention relates to a technique for manufacturing semiconductors.
  • the present invention relates to a plasma processing apparatus suitable for conducting plasma processing on semiconductor wafers by using plasma.
  • the circuit pattern goes on becoming finer. Accordingly, demanded working dimension precision is becoming stricter and stricter. Furthermore, the diameter of the wafer has become as large as 300 mm with the object of reducing the manufacturing cost of semiconductor elements. However, it is demanded to make plasma uniform in a wide range between the center of the wafer and the vicinity of the outer periphery and make high-quality uniform working possible with the object of increasing the yield.
  • a high frequency bias having the same frequency is applied to each of the upper electrode and the lower electrode (wafer).
  • a technique of monitoring the voltages and phases of the upper electrode and the lower electrode in order to control the high frequency voltage phase between those biases is known (see, for example, JP-A-8-162292).
  • a phenomenon that poses a problem in the plasma processing apparatus is resonance caused by an inductance and a stray capacitance in a high frequency power feeding system or a capacitance of an ion sheath generated on a front face of an electrode capacitance-coupled to plasma, such as the wafer.
  • Resonance caused by the stray capacitance and the inductance of the power feeding system and resonance caused by the capacitance of the ion sheath and the inductance of the power feeding system are independent of each other. In other words, the two resonance phenomena occur at the same time.
  • This poses a problem that information such as a voltage obtained from a measurement point indicates a value that is widely different from a state such as a voltage that is being actually generated on the wafer or the electrode.
  • a problem of the conventional technique is that these resonance phenomena are not taken into consideration essentially.
  • JP-A-2003-174015 has a precondition that information obtained from a measurement point, such as a voltage, is the same as the information concerning the wafer or has the same quality as the information concerning the wafer. If this precondition is not satisfied, the precision of the present technique is degraded remarkably.
  • JP-A-2002-203835 corresponding to U.S. Pat. No. 6,771,481 attention is paid to the fact that the precondition is not satisfied in the typical plasma processing apparatus.
  • the capacitance of the ion sheath is very difficult, and substantially impossible, to incorporate the capacitance of the ion sheath into the equivalent circuit and evaluate it accurately. Because the capacitance of the sheath depends upon plasma characteristics (an electron density, an electron temperature and a gas density and distribution of them on the wafer), which in turn depend upon a large number of parameters such as the gas pressure and gas component and high frequency power for plasma generation, and high frequency power for bias applied to the wafer, and consequently the capacitance value of the sheath cannot be calculated accurately. As a matter of course, there is a theory for calculating the capacitance. However, it is not possible to know accurate values of numerical values to be substituted into the theory. In other words, precision assurance cannot be conducted.
  • the capacitance of the ion sheath is a major element that determines a value of the load impedance seen from the wafer.
  • a high frequency voltage generated on the wafer depends upon a combination of a circuit ranging from a matching circuit to the wafer and the load impedance.
  • the capacitance of the ion sheath has a property that it depends upon the high frequency voltage generated on the wafer.
  • the capacitance and the wafer voltage depend on each other and they are related by a nonlinear relation.
  • determination of the capacitance and the wafer voltage therefore, it cannot be solved by using ordinary equivalent circuit simulation. They cannot be determined without executing a recursive calculation using a numerical computation method. It is very difficult to conduct the present calculation in real time from the viewpoint of both aligning numerical values of basic data for calculation start and the calculation time.
  • the technique disclosed in JP-A-2001-338917 is a technique of directly measuring the wafer potential and the resonance phenomenon in question can be avoided in principle.
  • the present technique has a problem of reliability, and it is difficult to put the present technique to practical use.
  • an oxide film or a nitride film located on the back of the wafer is broken through by a hard needle of WC (tungsten carbide), and direct measurement of the wafer voltage is implemented.
  • WC tungsten carbide
  • the resonance in question is a phenomenon that the inductance of the high frequency transmission path and the capacitance of the ion sheath cause resonance.
  • the resonance in question is a phenomenon that occurs not only when a high frequency bias is applied to the wafer but also when a high frequency bias is applied to the electrode opposed to the wafer as described in JP-A-8-162292.
  • FIG. 1 schematically shows a block diagram of components ranging from a wafer bias RF power supply to an electrode. Beginning with an output of the wafer bias RF power supply, a matching circuit, a Vpp detector, a power feeding cable, and an electrode are included in the cited order. The components ranging from the RF power supply to the power feeding cable are in the air, and the electrode for mounting the wafer is in the vacuum. A circuit shown in FIG. 2 is obtained by replacing each of the blocks shown in FIG. 1 with an equivalent circuit.
  • the power feeding cable is an ordinary coaxial line, and it includes an inductance (L 1 +L 2 ) of a central conductor and a stray capacitance (C 1 ).
  • the electrode is divided into a high frequency transmission part (having an equivalent circuit that is the same as the coaxial structure has) and a spray deposit (C 3 +R 1 ) for electrostatic chucking on a wafer.
  • a high voltage probe (8 pF and 10 M ⁇ ) for voltage measurement is connected to the wafer. Since the impedance is very high and it can be neglected, however, it is not written in the equivalent circuit.
  • the equivalent circuit shown in FIG. 2 is a typical one.
  • FIG. 3 A result obtained by measuring frequency characteristics with the configuration shown in FIG. 1 by using the actual electrode is shown in FIG. 3 .
  • Its abscissa indicates a frequency applied as a bias, and its ordinate indicates a ratio between voltages in positions V 1 and V 2 shown in FIG. 2 .
  • FIG. 4 It is found that the measured resonance phenomenon can be reproduced. This can be understood by means of the typically known resonant frequency represented by the following expression (1).
  • a total inductance Lt of the transmission line is approximately 1.7 ⁇ H and a total stray capacitance Ct of the transmission line and the electrode is approximately 908 pF.
  • Substituting them into the Expression 1 yields 4.1 MHz, and the result of the measurement can be explained well.
  • the resonance phenomenon itself can be reproduced by the simulation, the voltage ratio cannot be reproduced. This is because it is scarcely possible to replace electrical characteristics of the actual structure by such an accurate equivalent circuit that the measurement precision can be assured.
  • the inductance Lt and the stray capacitance Ct are respectively 1.7 ⁇ H and 908 pF, and consequently they are not extremely large values. They are the inductance and stray capacitance generated easily by connecting a high frequency transmission path having a length of several meters to the electrode. According to the experience of the present inventors, it is necessary to take this resonance phenomenon into consideration when using a bias having a frequency of at least 1 MHz, although it depends upon the design technique and the apparatus configuration.
  • the second resonance i.e., the resonance caused by the capacitance of the ion sheath and the inductance of the high frequency transmission system will now be described.
  • the wafer is capacitance-coupled to the plasma. Therefore, it becomes necessary to take a new capacitance generated by the plasma into consideration.
  • the resonant frequency it is conceivable that there is a case where the resonant frequency further falls as compared with the case shown in FIG. 3 or 4 .
  • the capacitance of the ion sheath formed on the front face of the wafer becomes dominant.
  • a thickness d sh of this ion sheath is theoretically given by the following expression (2).
  • V sh of the sheath can be defined by the following expression (3).
  • V sh 1 2 ⁇ ⁇ ⁇ ⁇ 0 2 ⁇ ⁇ ⁇ ( V S ⁇ ( ⁇ ) - V B ⁇ ( ⁇ ) ) ⁇ ⁇ ⁇ ( 3 )
  • ⁇ is an angular frequency of the bias
  • V s ( ⁇ ) is a plasma space potential
  • V B ( ⁇ ) is a bias potential
  • the final capacitance of the ion sheath is represented by the following expression (4) using the thickness d sh of the ion sheath.
  • ⁇ 0 is the dielectric constant of the vacuum
  • S W is an area of the wafer.
  • the capacitance of the ion sheath is in inverse proportion to the thickness of the ion sheath.
  • a condition under which the thickness of the ion sheath becomes thin is equivalent to a condition under which the resonant frequency becomes low.
  • the Debye length is the basic length of the electric field shielding capability, and it becomes short in inverse proportion to the density of the plasma.
  • the electron temperature changes only by several tens percents at most. Neglecting the electron temperature change accordingly, it is appreciated from the Expression 2 that a condition under which the thickness of the ion sheath becomes thin is satisfied when the plasma density is high and the bias voltage is low.
  • the resonant frequency in question is not constant but it changes depending upon the plasma generation condition and wafer working condition even in the same apparatus or if the apparatus is different.
  • the electron temperature is approximately 3 eV and the plasma density is in the range of 10 10 to 10 12 cm ⁇ 3 .
  • the bias voltage is in the range of 100 to 4,000 Vpp.
  • the capacitance of the ion sheath obtained from this is in the range of approximately 200 to 8,000 pF.
  • the resonance is simulated.
  • FIG. 5 A schematic equivalent circuit is shown in FIG. 5 .
  • C 3 which is a capacitance of the electrode spray deposit, in series with C 5 .
  • the resonant frequency at the time when there is plasma depends on the composite capacitance of the capacitance of the ion sheath and the capacitance of the electrode spray deposit and the inductance of the transmission line. Since the capacitance of the electrode spray deposit assumes a value unique to the apparatus, it can be concluded that the resonance phenomenon is generated by the inductance of the transmission line and the capacitance of the ion sheath.
  • FIG. 7 shows frequency characteristics obtained when the wafer bias power supply is output so as to make Vpp on the electrode equal to a constant voltage of 20 V.
  • the resonant frequency becomes extremely low. In this case, the resonant frequency becomes 2 MHz or below. Supposing that the inductance Lt of the transmission line is 1.7 ⁇ H in calculation, the composite capacitance is estimated to be approximately 4,300 pF. Since Vpp is extremely low in this case, the capacitance of the sheath amounts to approximately 10,000 pF. It is appreciated that the resonant frequency falls remarkably when the bias voltage is low, as predicted in accordance with the theory described heretofore.
  • the first resonance phenomenon is generated by the inductance and the stray capacitance of the high frequency transmission line.
  • the second resonance phenomenon is generated by the inductance of the high frequency transmission line and the capacitance of the ion sheath.
  • the resonant frequency based on the capacitance of the ion sheath has strong dependence on the bias voltage and the plasma density.
  • the resonant frequency based on the capacitance of the ion sheath changes greatly depending upon the wafer processing condition.
  • An object of the present invention is to provide a technique by which voltage and phase measurement can be easily set to arbitrary goal precision even under presence of the resonance phenomenon.
  • a plasma processing apparatus including a vacuum vessel, a lower electrode provided in the vacuum vessel to place a sample thereon, a matcher connected to the lower electrode, and a power supply for supplying power to the lower electrode via the matcher includes an electrostatic chuck electrode provided within the lower electrode to hold the sample, and a voltage measurement circuit provided within the lower electrode to measure a voltage at the electrostatic chuck electrode and output the measured voltage as a DC voltage.
  • the present invention it is possible to implement a detection circuit that is not susceptible to the influence of resonance even if the resonance is present. As a result, the high frequency voltage and phase can be detected accurately. Furthermore, it becomes possible to run the operation of the plasma processing apparatus stably in an optimum state.
  • FIG. 1 is a block diagram of components included in the range of a wafer bias RF power supply to an electrode;
  • FIG. 2 is an equivalent circuit diagram for the block diagram shown in FIG. 1 ;
  • FIG. 3 is a diagram showing frequency characteristics in the configuration shown in FIG. 1 ;
  • FIG. 4 shows a result of simulation conducted by using the equivalent circuit shown in FIG. 2 ;
  • FIG. 5 is an equivalent circuit diagram for a range from the wafer bias RF power supply to plasma
  • FIG. 6 shows a result of simulation conducted by using the equivalent circuit shown in FIG. 5 ;
  • FIG. 7 is a frequency characteristic diagram obtained when Vpp on the electrode is set equal to a constant voltage of 20 V;
  • FIG. 8 is an equivalent circuit diagram obtained when a Vpp detector is incorporated into the electrode
  • FIG. 9 is a schematic diagram showing a first embodiment of a plasma etching apparatus
  • FIG. 10 is a schematic diagram showing a second embodiment of a plasma etching apparatus
  • FIG. 11 is an equivalent circuit diagram for the configuration shown in FIG. 10 ;
  • FIGS. 12A-12C show results of simulation conducted by using the equivalent circuit shown in FIG. 11 ;
  • FIG. 13 is an equivalent circuit diagram obtained when a phase detector is incorporated into the electrode
  • FIG. 14 is an equivalent circuit diagram obtained when the phase detector is disposed outside the electrode
  • FIG. 16 is a schematic diagram showing a plasma etching apparatus according to a third embodiment.
  • the resonances do not disappear, and correction using a calculation or calibration cannot be conducted. Therefore, it is appreciated that it is important in attaining the object to configure the apparatus so as to cause the voltage and phase information at the measurement point to be equivalent to or have the same quality as the voltage and phase information at an electrode of the measurement subject (an electrode capacitance-coupled to plasma on the wafer or the like). Specifically, it is important to form a configuration having a detection circuit that is not susceptible to the influence of resonance even if the resonances are present.
  • Such a configuration can be achieved by incorporating the Vpp detector incorporated in the matcher shown in FIGS. 1 and 2 into the electrode. This configuration is shown in FIG. 8 . According to this configuration, the Vpp detector becomes unsusceptible to the influence of L 1 to L 4 causing the resonance and it becomes possible to convert a voltage generated directly at the electrode to a DC voltage and output the DC voltage.
  • FIG. 9 is a longitudinal section diagram of an etching chamber used in the present invention.
  • a VHF plasma etching apparatus for forming plasma by utilizing a VHF (Very High Frequency) and a magnetic field is shown.
  • An upper opening part including a cylindrical processing vessel 104 , a platelike antenna electrode 103 formed of a conductor such as silicon, and a dielectric window 102 formed of quartz and sapphire capable of transmitting electromagnetic waves is placed on a vacuum vessel 101 via a vacuum seal material 127 , such as an O-ring, so as to be hermetically sealed.
  • a processing chamber 105 is formed inside.
  • a magnetic field generating coil 114 is provided on an outer periphery part of the processing chamber 104 so as to surround the processing chamber.
  • the antenna electrode 103 has a perforated structure for letting an etching gas flow.
  • a flon gas such as CF 4 , C 4 F 6 , C 4 F 8 , C 5 F 8 , CHF 3 or CH 2 F 2 , an inert gas such as Ar or N 2 , or O 2 or a gas containing an oxide such as CO is controlled by a flow rate adjuster (not illustrated) including an MFC (mass flow controller) provided in a gas supplier 107 , and led into the processing chamber 105 via the gas supplier 107 .
  • a vacuum exhauster 106 is connected to the vacuum vessel 101 .
  • the inside of the processing chamber 105 is kept at a predetermined pressure by a vacuum exhauster (not illustrated) including an MP (turbo-molecular pump) provided in the vacuum exhauster 106 and a pressure governor (not illustrated) including an APC.
  • a coaxial line 111 is provided over the antenna electrode 103 .
  • a high frequency power supply for plasma generation (first high frequency power supply) 108 (having, for example, a frequency of 200 MHz) is connected to the antenna electrode 103 via the coaxial line 111 , a coaxial waveguide 125 and a matcher 109 .
  • a substrate electrode 115 on which a wafer 116 can be disposed is provided in a lower part in the vacuum vessel 101 .
  • a coaxial line 151 is provided under the substrate electrode 115 .
  • a wafer bias power supply (second high frequency power supply) 119 (having, for example, a frequency of 4 MHz) is connected to the substrate electrode 115 via the coaxial line 151 , a coaxial waveguide 152 , a power feeding cable 153 , and a matcher 118 .
  • the coaxial line 151 and the coaxial waveguide 152 are, for example, the high frequency transmission part in the electrode shown in FIG. 2 , and they are in the vacuum.
  • the power feeding cable 153 is on the atmospheric pressure side.
  • An electrostatic chuck electrode 124 having an electrostatic chuck function for adsorbing the wafer 116 electrostatically is buried in the substrate electrode 115 .
  • An electrostatic chuck power supply 123 is connected to the electrostatic chuck electrode 124 via a filter 122 .
  • the filter 122 passes through DC power from the electrostatic chuck power supply 123 , and effectively cuts off power from the plasma generation high frequency power supply 108 and the wafer bias power supply 119 .
  • a wafer voltage measurement circuit 154 is incorporated right under the electrostatic chuck electrode 124 in the vacuum.
  • the influence of the resonance is eliminated by thus attaching the measurement circuit directly to a place where the voltage to be measured is generated, converting the measured voltage to a DC voltage on the spot, and taking out a resultant signal to the outside of the vacuum.
  • a composite impedance of C 6 and C 7 in the voltage measurement circuit 154 shown in FIG. 8 must be sufficiently high. To which degree the composite impedances must be high will be described with reference to a second embodiment. However, this method has several problems.
  • the problems are: (1) electric parts (such as resistors, capacitors, coils and diodes) in use are premised on use in the atmosphere, and the performance is not assured for use in the vacuum; (2) since heat generation from the electric parts is inevitable and little heat is radiated in the vacuum, continuous use is impossible; the possibility that part degradation will be caused by a corrosive gas is high; (4) when film deposition occurs, the possibility that circuit operation will be affected is high; (5) the possibility that the circuit will be damaged by turnaround of the high frequency for plasma generation is high; and (6) the possibility that the circuit will be damaged or the circuit operation will be affected by plasma generated around the circuit because of turnaround of the high frequency for plasma generation is high. Each of these problems is not insoluble.
  • the problems can be solved by burying the whole of the voltage measurement circuit 154 into resin, housing the whole of the voltage measurement circuit 154 into a hermetically sealed structure to protect the voltage measurement circuit 154 from the corrosive gas, and housing the whole of the voltage measurement circuit 154 into a hermetically sealed vessel that can be shielded electromagnetically.
  • FIG. 10 A second embodiment in which the problems of the first embodiment are solved more thoroughly is shown in FIG. 10 .
  • the voltage measurement point is the electrostatic chuck electrode 124 in the same way as FIG. 9 .
  • This voltage is taken out to the outside of the vacuum by using a coaxial cable 157 .
  • the voltage taken out to the outside of the vacuum is converted to a DC voltage signal by using the voltage measurement circuit 154 .
  • This configuration has a merit that the demerit of the configuration shown in FIG. 9 is eliminated because the voltage measurement circuit 154 can be disposed on the atmosphere side.
  • the above-described resonance phenomenon loses no relation because it suffices that the voltage at the electrostatic chuck electrode 124 is equal to the voltage at the voltage measurement circuit 154 .
  • a special contrivance becomes necessary in the coaxial cable 157 and the voltage measurement circuit 154 in order to make the voltage at the electrostatic chuck electrode 124 equal to the voltage at the voltage measurement circuit 154 .
  • FIG. 11 An equivalent circuit for the apparatus shown in FIG. 10 is shown in FIG. 11 .
  • the equivalent circuit shown in FIG. 11 differs from the equivalent circuit shown in FIG. 8 in that a coaxial cable is inserted between the electrode and the voltage measurement circuit.
  • the above-described special contrivance is to make a composite impedance Zs of the coaxial cable and the voltage measurement circuit sufficiently higher than a load impedance Zp inclusive of the plasma. If Zs is small, then a voltage drop is caused by Zs and large reactive current flows, resulting in a heavy burden on the transmission system. If an RF power supply shown in FIG. 11 is controlled to output constant power, then such a demerit is not eliminated completely, but it can be suppressed to a negligible level in an allowable range.
  • V 1 ′/V 1 (Zs/(Zp+Zs)) ⁇ 0.5.
  • ⁇ represents precision of the measured voltage value in the state in which the voltage measurement circuit is coupled.
  • a is a value in the range of 0 to 1.
  • Zs must have an impedance that is at least 9.3 times as large as Zp. It is also possible to replace C 6 and C 7 in the voltage measurement circuit by resistors. Unless resistances of the resistors are sufficiently high (for example, at least 10 M ⁇ ), however, power loss is caused in the resistors. Accordingly, care should be taken.
  • FIGS. 12A-12C Equivalent circuit simulation results obtained by using circuit constants heretofore described are shown in FIGS. 12A-12C .
  • FIG. 12A shows a voltage ratio between V 1 and V 2 (indicated in FIG. 11 ) obtained when the voltage measurement circuit is not connected, and shows the same result as that of FIG. 6 .
  • V 1 /V 2 ratio and V 1 /V 3 ratio obtained when the voltage measurement circuit having the above-described circuit constants is connected are shown in FIGS. 12B and 12C , respectively. Comparing the V 1 /V 2 ratio shown in FIG. 12A with that shown in FIG. 12B , it is appreciated that an influence of the voltage measurement circuit is noticeable at 40 MHz or above, but the influence of the voltage measurement circuit is hardly noticeable at 10 MHz or below.
  • FIGS. 8 and 11 Block diagrams corresponding to FIGS. 8 and 11 are shown in FIGS. 13 and 14 , respectively.
  • Results obtained by simulating phase differences of V 1 /V 2 and V 1 /V 3 in FIG. 14 under the same conditions as FIGS. 12A-12C are shown in FIGS. 15A and 15B , respectively.
  • the phase difference between V 1 and V 2 exhibits complicated behavior.
  • the phase difference between V 1 and V 3 suddenly changes from 0° to 180° at a resonant frequency of 41 MHz.
  • phase detection circuit is formed of only an inductance and a capacitance without using resistances. If resistances are used, then unadvantageously the phase difference exhibits a comparatively gently-sloping change. It is appreciated from this result that there are no problems as regards the phase measurement as long as the restriction represented by the Expression 6 is observed.
  • the circuit concerning the voltage measurement and phase measurement heretofore described can be applied to not only the electrode having a wafer mounted thereon, but also all electrodes capacitance-coupled to plasma. This embodiment will now be described.
  • FIG. 16 is a longitudinal section diagram of an etching chamber used in the present invention.
  • FIG. 16 differs from FIG. 10 in that not only the high frequency power supply for plasma generation (the first high frequency power supply) 108 (having a frequency of, for example, 200 MHz) is connected to the antenna electrode 103 via the matcher 109 but also an antenna bias power supply 113 which is a third high frequency power supply is connected to the antenna electrode 103 via a matcher 112 .
  • the antenna bias power supply 113 and the wafer bias power supply 119 are connected to a phase controller 120 . As a result, phases of the high frequencies output from the antenna bias power supply 113 and the wafer bias power supply 119 can be controlled.
  • the antenna bias power supply 113 and the wafer bias power supply 119 are made to have the same frequency (for example, 4 MHz).
  • a difference in phase (for example, 180°) between the antenna biasing high frequency appearing on the antenna electrode 103 and the wafer biasing high frequency appearing on the wafer 116 is controlled, and a bias can be applied to each of the antenna electrode 103 and the wafer 116 effectively.
  • the voltage and phase at the electrostatic chuck electrode 124 are detected by pulling out the voltage to the atmospheric pressure side by the use of the coaxial cable 157 and providing a phase measurement circuit 155 .
  • phase controller 120 compares phases obtained from the two phase measurement circuits 155 and 156 , and determines a phase difference in high frequencies to be sent to the antenna bias power supply 113 and the wafer bias power supply 119 so as to generate a predetermined phase difference.
  • the matcher 109 incorporates a filter 110 for cutting off the frequency of the antenna bias power supply 113 .
  • the matcher 112 incorporates a filter 121 for cutting off the frequency of the high frequency power supply 108 for plasma generation. Outputs of the two matchers 109 and 112 are combined by using a coaxial cable 158 , and a resultant signal is coupled to the coaxial line 111 which is the high frequency transmission system for the antenna electrode.

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US10435789B2 (en) * 2016-12-06 2019-10-08 Asm Ip Holding B.V. Substrate treatment apparatus
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