KR100742575B1 - 기체 플루오르화수소를 사용한 고순도 용액의 제조 방법 - Google Patents

기체 플루오르화수소를 사용한 고순도 용액의 제조 방법 Download PDF

Info

Publication number
KR100742575B1
KR100742575B1 KR1020017012480A KR20017012480A KR100742575B1 KR 100742575 B1 KR100742575 B1 KR 100742575B1 KR 1020017012480 A KR1020017012480 A KR 1020017012480A KR 20017012480 A KR20017012480 A KR 20017012480A KR 100742575 B1 KR100742575 B1 KR 100742575B1
Authority
KR
South Korea
Prior art keywords
hydrogen fluoride
solution
high purity
gas
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020017012480A
Other languages
English (en)
Korean (ko)
Other versions
KR20020024577A (ko
Inventor
시베르트볼프강
Original Assignee
허니웰 스페셜티 케미칼스 젤체 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 허니웰 스페셜티 케미칼스 젤체 게엠베하 filed Critical 허니웰 스페셜티 케미칼스 젤체 게엠베하
Publication of KR20020024577A publication Critical patent/KR20020024577A/ko
Application granted granted Critical
Publication of KR100742575B1 publication Critical patent/KR100742575B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/09—Bromine; Hydrogen bromide
    • C01B7/093—Hydrogen bromide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/01—Chlorine; Hydrogen chloride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Gas Separation By Absorption (AREA)
  • ing And Chemical Polishing (AREA)
KR1020017012480A 1999-03-29 2000-03-29 기체 플루오르화수소를 사용한 고순도 용액의 제조 방법 Expired - Fee Related KR100742575B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19914243.2 1999-03-29
DE19914243A DE19914243A1 (de) 1999-03-29 1999-03-29 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff

Publications (2)

Publication Number Publication Date
KR20020024577A KR20020024577A (ko) 2002-03-30
KR100742575B1 true KR100742575B1 (ko) 2007-08-02

Family

ID=7902836

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017012480A Expired - Fee Related KR100742575B1 (ko) 1999-03-29 2000-03-29 기체 플루오르화수소를 사용한 고순도 용액의 제조 방법

Country Status (13)

Country Link
EP (1) EP1171379B1 (https=)
JP (1) JP4084929B2 (https=)
KR (1) KR100742575B1 (https=)
CN (1) CN1319851C (https=)
AT (1) ATE321009T1 (https=)
AU (1) AU4291300A (https=)
BR (1) BR0009387A (https=)
CA (1) CA2368441A1 (https=)
DE (2) DE19914243A1 (https=)
HK (1) HK1045977A1 (https=)
IL (1) IL145623A0 (https=)
MX (1) MXPA01009861A (https=)
WO (1) WO2000058208A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153095B2 (en) * 1999-03-29 2012-04-10 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
EP1509476A1 (en) * 2002-06-05 2005-03-02 Honeywell International Inc. Method for producing highly pure anhydrous solutions containing hydrogen fluoride
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
TWI282814B (en) * 2002-09-13 2007-06-21 Daikin Ind Ltd Etchant and etching method
CN1326771C (zh) * 2005-10-18 2007-07-18 自贡市金典化工有限公司 碘化铵的生产方法
CN102774813A (zh) * 2011-05-12 2012-11-14 特力生有限公司 氢氟酸制造方法
CN110369126B (zh) * 2019-08-05 2020-06-23 潍坊奇为新材料科技有限公司 一种高饱和磁通量导磁介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336356A (en) * 1992-05-22 1994-08-09 Mitsubishi Denki Kabushiki Kaisha Apparatus for treating the surface of a semiconductor substrate
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
EP0887323A1 (en) * 1997-06-25 1998-12-30 International Business Machines Corporation Selective etching of silicate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520947A (en) * 1946-04-08 1950-09-05 Phillips Petroleum Co Recovery of hydrogen halides
US2537076A (en) * 1948-08-25 1951-01-09 Standard Oil Co Hydrogen fluoride recovery
FR1477742A (fr) * 1966-03-11 1967-04-21 Pechiney Saint Gobain Procédé d'extraction et de concentration de l'acide fluorhydrique gazeux par des solvants aminés
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US4629610A (en) * 1985-05-10 1986-12-16 Dow Chemical Co. Hydrogen fluoride recovery process
CH664978A5 (en) * 1985-06-25 1988-04-15 Industrieorientierte Forsch Etching oxidic material - with hydrogen fluoride soln. in organic cpd. including nitrogen cpd. forming complex, esp. pyridine, useful in optical industry
DD254373A1 (de) * 1986-12-09 1988-02-24 Nuenchritz Chemie Verfahren zur gewinnung hochreiner fluorwasserstoffsaeure
DD281173A5 (de) * 1989-04-04 1990-08-01 Nuenchritz Chemie Verfahren zur herstellung von hochreinem, kristallisierten ammoniumfluorid
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
CA2141492C (en) * 1994-04-28 1999-07-27 Bruce B. Randolph Transportation of hydrogen fluoride

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5336356A (en) * 1992-05-22 1994-08-09 Mitsubishi Denki Kabushiki Kaisha Apparatus for treating the surface of a semiconductor substrate
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
EP0887323A1 (en) * 1997-06-25 1998-12-30 International Business Machines Corporation Selective etching of silicate
EP0887323B1 (en) * 1997-06-25 2001-08-01 International Business Machines Corporation Selective etching of silicate

Also Published As

Publication number Publication date
WO2000058208A3 (de) 2001-04-26
ATE321009T1 (de) 2006-04-15
AU4291300A (en) 2000-10-16
HK1045977A1 (zh) 2002-12-20
DE50012445D1 (de) 2006-07-13
IL145623A0 (en) 2002-06-30
JP2002540257A (ja) 2002-11-26
CN1346331A (zh) 2002-04-24
CA2368441A1 (en) 2000-10-05
DE19914243A1 (de) 2000-10-05
BR0009387A (pt) 2002-01-29
MXPA01009861A (es) 2003-06-24
JP4084929B2 (ja) 2008-04-30
KR20020024577A (ko) 2002-03-30
EP1171379A2 (de) 2002-01-16
CN1319851C (zh) 2007-06-06
EP1171379B1 (de) 2006-03-22
WO2000058208A2 (de) 2000-10-05

Similar Documents

Publication Publication Date Title
EP3024779B1 (en) Synthesis of hydrogen bis(fluorosulfonyl)imide
EP0739228A1 (en) Recycling of wafer cleaning substances
KR101800299B1 (ko) 알코올 용매를 이용한 리튬 플루오로술포닐이미드의 제조 방법
KR100742575B1 (ko) 기체 플루오르화수소를 사용한 고순도 용액의 제조 방법
KR102636891B1 (ko) 폐 nmp의 정제방법
CN114040888B (zh) 生产双(氟磺酰基)酰亚胺的碱金属盐的方法
US8153095B2 (en) Method for producing highly pure solutions using gaseous hydrogen fluoride
CN1407949A (zh) 生产三氟化氮的方法及其应用
JP2003095648A (ja) 高純度フッ化カルシウムおよびその中間体の製造方法
JP2005528316A (ja) フッ化水素を含有する高純度無水溶液の製造方法
JP4554193B2 (ja) ヒドロキシルアミン安定剤の製造方法及び精製方法
KR20240112842A (ko) 리튬 비스(플루오로설포닐)이미드의 제조 방법
US7045655B2 (en) Preparation and purification of hydroxylamine stabilizers
JP4110314B2 (ja) 第四級アンモニウム塩の過酸化水素化物の分析方法
CN119317593A (zh) 高纯度盐酸的制造方法
WO2004076353A1 (en) Process for producing calcium fluoride
CN116924894A (zh) 一种1-(1-乙氧基乙氧基)-3-乙烯基苯的合成方法
JPH0379350B2 (https=)
JPH0813775B2 (ja) ３，３−ジメチル酪酸の製造法
JP2003221367A (ja) 第四級アンモニウム塩の過酸化水素化物の安定化方法

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20080417

Republication note text: Request for Correction Notice (Document Request)

Gazette number: 1007425750000

Gazette reference publication date: 20070802

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20110629

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20120720

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20120720