CA2368441A1 - Method for producing high-purity solutions using gaseous hydrogen fluoride - Google Patents

Method for producing high-purity solutions using gaseous hydrogen fluoride Download PDF

Info

Publication number
CA2368441A1
CA2368441A1 CA002368441A CA2368441A CA2368441A1 CA 2368441 A1 CA2368441 A1 CA 2368441A1 CA 002368441 A CA002368441 A CA 002368441A CA 2368441 A CA2368441 A CA 2368441A CA 2368441 A1 CA2368441 A1 CA 2368441A1
Authority
CA
Canada
Prior art keywords
hydrogen fluoride
water
highly pure
gas
accordance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002368441A
Other languages
English (en)
French (fr)
Inventor
Wolfgang Sievert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Specialty Chemicals Seelze GmbH
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2368441A1 publication Critical patent/CA2368441A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/09—Bromine; Hydrogen bromide
    • C01B7/093—Hydrogen bromide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/01—Chlorine; Hydrogen chloride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Gas Separation By Absorption (AREA)
  • ing And Chemical Polishing (AREA)
CA002368441A 1999-03-29 2000-03-29 Method for producing high-purity solutions using gaseous hydrogen fluoride Abandoned CA2368441A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19914243.2 1999-03-29
DE19914243A DE19914243A1 (de) 1999-03-29 1999-03-29 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff
PCT/EP2000/002763 WO2000058208A2 (de) 1999-03-29 2000-03-29 Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff

Publications (1)

Publication Number Publication Date
CA2368441A1 true CA2368441A1 (en) 2000-10-05

Family

ID=7902836

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002368441A Abandoned CA2368441A1 (en) 1999-03-29 2000-03-29 Method for producing high-purity solutions using gaseous hydrogen fluoride

Country Status (13)

Country Link
EP (1) EP1171379B1 (https=)
JP (1) JP4084929B2 (https=)
KR (1) KR100742575B1 (https=)
CN (1) CN1319851C (https=)
AT (1) ATE321009T1 (https=)
AU (1) AU4291300A (https=)
BR (1) BR0009387A (https=)
CA (1) CA2368441A1 (https=)
DE (2) DE19914243A1 (https=)
HK (1) HK1045977A1 (https=)
IL (1) IL145623A0 (https=)
MX (1) MXPA01009861A (https=)
WO (1) WO2000058208A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004108592A1 (en) * 2003-06-05 2004-12-16 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
CN102774813A (zh) * 2011-05-12 2012-11-14 特力生有限公司 氢氟酸制造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1509476A1 (en) * 2002-06-05 2005-03-02 Honeywell International Inc. Method for producing highly pure anhydrous solutions containing hydrogen fluoride
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
TWI282814B (en) * 2002-09-13 2007-06-21 Daikin Ind Ltd Etchant and etching method
CN1326771C (zh) * 2005-10-18 2007-07-18 自贡市金典化工有限公司 碘化铵的生产方法
CN110369126B (zh) * 2019-08-05 2020-06-23 潍坊奇为新材料科技有限公司 一种高饱和磁通量导磁介质

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520947A (en) * 1946-04-08 1950-09-05 Phillips Petroleum Co Recovery of hydrogen halides
US2537076A (en) * 1948-08-25 1951-01-09 Standard Oil Co Hydrogen fluoride recovery
FR1477742A (fr) * 1966-03-11 1967-04-21 Pechiney Saint Gobain Procédé d'extraction et de concentration de l'acide fluorhydrique gazeux par des solvants aminés
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US4629610A (en) * 1985-05-10 1986-12-16 Dow Chemical Co. Hydrogen fluoride recovery process
CH664978A5 (en) * 1985-06-25 1988-04-15 Industrieorientierte Forsch Etching oxidic material - with hydrogen fluoride soln. in organic cpd. including nitrogen cpd. forming complex, esp. pyridine, useful in optical industry
DD254373A1 (de) * 1986-12-09 1988-02-24 Nuenchritz Chemie Verfahren zur gewinnung hochreiner fluorwasserstoffsaeure
DD281173A5 (de) * 1989-04-04 1990-08-01 Nuenchritz Chemie Verfahren zur herstellung von hochreinem, kristallisierten ammoniumfluorid
JP2896268B2 (ja) * 1992-05-22 1999-05-31 三菱電機株式会社 半導体基板の表面処理装置及びその制御方法
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
CA2141492C (en) * 1994-04-28 1999-07-27 Bruce B. Randolph Transportation of hydrogen fluoride
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
TW434196B (en) * 1997-06-25 2001-05-16 Ibm Selective etching of silicate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153095B2 (en) 1999-03-29 2012-04-10 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
WO2004108592A1 (en) * 2003-06-05 2004-12-16 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
CN102774813A (zh) * 2011-05-12 2012-11-14 特力生有限公司 氢氟酸制造方法

Also Published As

Publication number Publication date
WO2000058208A3 (de) 2001-04-26
ATE321009T1 (de) 2006-04-15
AU4291300A (en) 2000-10-16
KR100742575B1 (ko) 2007-08-02
HK1045977A1 (zh) 2002-12-20
DE50012445D1 (de) 2006-07-13
IL145623A0 (en) 2002-06-30
JP2002540257A (ja) 2002-11-26
CN1346331A (zh) 2002-04-24
DE19914243A1 (de) 2000-10-05
BR0009387A (pt) 2002-01-29
MXPA01009861A (es) 2003-06-24
JP4084929B2 (ja) 2008-04-30
KR20020024577A (ko) 2002-03-30
EP1171379A2 (de) 2002-01-16
CN1319851C (zh) 2007-06-06
EP1171379B1 (de) 2006-03-22
WO2000058208A2 (de) 2000-10-05

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued