ATE321009T1 - Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff - Google Patents
Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoffInfo
- Publication number
- ATE321009T1 ATE321009T1 AT00922565T AT00922565T ATE321009T1 AT E321009 T1 ATE321009 T1 AT E321009T1 AT 00922565 T AT00922565 T AT 00922565T AT 00922565 T AT00922565 T AT 00922565T AT E321009 T1 ATE321009 T1 AT E321009T1
- Authority
- AT
- Austria
- Prior art keywords
- hydrogen fluoride
- highly pure
- gaseous hydrogen
- producing highly
- pure solutions
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/09—Bromine; Hydrogen bromide
- C01B7/093—Hydrogen bromide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/01—Chlorine; Hydrogen chloride
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
- C01B7/191—Hydrogen fluoride
- C01B7/195—Separation; Purification
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Hydrogen, Water And Hydrids (AREA)
- Gas Separation By Absorption (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19914243A DE19914243A1 (de) | 1999-03-29 | 1999-03-29 | Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE321009T1 true ATE321009T1 (de) | 2006-04-15 |
Family
ID=7902836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00922565T ATE321009T1 (de) | 1999-03-29 | 2000-03-29 | Verfahren zur herstellung hochreiner lösungen unter verwendung von gasförmigem fluorwasserstoff |
Country Status (13)
| Country | Link |
|---|---|
| EP (1) | EP1171379B1 (https=) |
| JP (1) | JP4084929B2 (https=) |
| KR (1) | KR100742575B1 (https=) |
| CN (1) | CN1319851C (https=) |
| AT (1) | ATE321009T1 (https=) |
| AU (1) | AU4291300A (https=) |
| BR (1) | BR0009387A (https=) |
| CA (1) | CA2368441A1 (https=) |
| DE (2) | DE19914243A1 (https=) |
| HK (1) | HK1045977A1 (https=) |
| IL (1) | IL145623A0 (https=) |
| MX (1) | MXPA01009861A (https=) |
| WO (1) | WO2000058208A2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8153095B2 (en) * | 1999-03-29 | 2012-04-10 | Honeywell International Inc. | Method for producing highly pure solutions using gaseous hydrogen fluoride |
| EP1509476A1 (en) * | 2002-06-05 | 2005-03-02 | Honeywell International Inc. | Method for producing highly pure anhydrous solutions containing hydrogen fluoride |
| US7192860B2 (en) | 2002-06-20 | 2007-03-20 | Honeywell International Inc. | Highly selective silicon oxide etching compositions |
| TWI282814B (en) * | 2002-09-13 | 2007-06-21 | Daikin Ind Ltd | Etchant and etching method |
| CN1326771C (zh) * | 2005-10-18 | 2007-07-18 | 自贡市金典化工有限公司 | 碘化铵的生产方法 |
| CN102774813A (zh) * | 2011-05-12 | 2012-11-14 | 特力生有限公司 | 氢氟酸制造方法 |
| CN110369126B (zh) * | 2019-08-05 | 2020-06-23 | 潍坊奇为新材料科技有限公司 | 一种高饱和磁通量导磁介质 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2520947A (en) * | 1946-04-08 | 1950-09-05 | Phillips Petroleum Co | Recovery of hydrogen halides |
| US2537076A (en) * | 1948-08-25 | 1951-01-09 | Standard Oil Co | Hydrogen fluoride recovery |
| FR1477742A (fr) * | 1966-03-11 | 1967-04-21 | Pechiney Saint Gobain | Procédé d'extraction et de concentration de l'acide fluorhydrique gazeux par des solvants aminés |
| US3979241A (en) * | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
| US4269654A (en) * | 1977-11-18 | 1981-05-26 | Rca Corporation | Silicon nitride and silicon oxide etchant |
| US4230523A (en) * | 1978-12-29 | 1980-10-28 | International Business Machines Corporation | Etchant for silicon dioxide films disposed atop silicon or metallic silicides |
| US4629610A (en) * | 1985-05-10 | 1986-12-16 | Dow Chemical Co. | Hydrogen fluoride recovery process |
| CH664978A5 (en) * | 1985-06-25 | 1988-04-15 | Industrieorientierte Forsch | Etching oxidic material - with hydrogen fluoride soln. in organic cpd. including nitrogen cpd. forming complex, esp. pyridine, useful in optical industry |
| DD254373A1 (de) * | 1986-12-09 | 1988-02-24 | Nuenchritz Chemie | Verfahren zur gewinnung hochreiner fluorwasserstoffsaeure |
| DD281173A5 (de) * | 1989-04-04 | 1990-08-01 | Nuenchritz Chemie | Verfahren zur herstellung von hochreinem, kristallisierten ammoniumfluorid |
| JP2896268B2 (ja) * | 1992-05-22 | 1999-05-31 | 三菱電機株式会社 | 半導体基板の表面処理装置及びその制御方法 |
| US5320709A (en) * | 1993-02-24 | 1994-06-14 | Advanced Chemical Systems International Incorporated | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution |
| CA2141492C (en) * | 1994-04-28 | 1999-07-27 | Bruce B. Randolph | Transportation of hydrogen fluoride |
| WO1997002958A1 (en) * | 1995-07-10 | 1997-01-30 | Advanced Chemical Systems International | Organic amine/hydrogen fluoride etchant composition and method |
| TW434196B (en) * | 1997-06-25 | 2001-05-16 | Ibm | Selective etching of silicate |
-
1999
- 1999-03-29 DE DE19914243A patent/DE19914243A1/de not_active Ceased
-
2000
- 2000-03-29 MX MXPA01009861A patent/MXPA01009861A/es unknown
- 2000-03-29 HK HK02107547.1A patent/HK1045977A1/zh unknown
- 2000-03-29 CA CA002368441A patent/CA2368441A1/en not_active Abandoned
- 2000-03-29 WO PCT/EP2000/002763 patent/WO2000058208A2/de not_active Ceased
- 2000-03-29 JP JP2000607921A patent/JP4084929B2/ja not_active Expired - Fee Related
- 2000-03-29 DE DE50012445T patent/DE50012445D1/de not_active Expired - Lifetime
- 2000-03-29 EP EP00922565A patent/EP1171379B1/de not_active Expired - Lifetime
- 2000-03-29 IL IL14562300A patent/IL145623A0/xx unknown
- 2000-03-29 AT AT00922565T patent/ATE321009T1/de not_active IP Right Cessation
- 2000-03-29 KR KR1020017012480A patent/KR100742575B1/ko not_active Expired - Fee Related
- 2000-03-29 AU AU42913/00A patent/AU4291300A/en not_active Abandoned
- 2000-03-29 BR BR0009387-4A patent/BR0009387A/pt not_active IP Right Cessation
- 2000-03-29 CN CNB008058881A patent/CN1319851C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000058208A3 (de) | 2001-04-26 |
| AU4291300A (en) | 2000-10-16 |
| KR100742575B1 (ko) | 2007-08-02 |
| HK1045977A1 (zh) | 2002-12-20 |
| DE50012445D1 (de) | 2006-07-13 |
| IL145623A0 (en) | 2002-06-30 |
| JP2002540257A (ja) | 2002-11-26 |
| CN1346331A (zh) | 2002-04-24 |
| CA2368441A1 (en) | 2000-10-05 |
| DE19914243A1 (de) | 2000-10-05 |
| BR0009387A (pt) | 2002-01-29 |
| MXPA01009861A (es) | 2003-06-24 |
| JP4084929B2 (ja) | 2008-04-30 |
| KR20020024577A (ko) | 2002-03-30 |
| EP1171379A2 (de) | 2002-01-16 |
| CN1319851C (zh) | 2007-06-06 |
| EP1171379B1 (de) | 2006-03-22 |
| WO2000058208A2 (de) | 2000-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| REN | Ceased due to non-payment of the annual fee |