CN1319851C - 使用气态氟化氢制备高纯溶液的方法 - Google Patents

使用气态氟化氢制备高纯溶液的方法 Download PDF

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Publication number
CN1319851C
CN1319851C CNB008058881A CN00805888A CN1319851C CN 1319851 C CN1319851 C CN 1319851C CN B008058881 A CNB008058881 A CN B008058881A CN 00805888 A CN00805888 A CN 00805888A CN 1319851 C CN1319851 C CN 1319851C
Authority
CN
China
Prior art keywords
hydrogen fluoride
solution
purity
gaseous
anhydrous solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008058881A
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English (en)
Chinese (zh)
Other versions
CN1346331A (zh
Inventor
W·西韦特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Specialty Chemicals Seelze GmbH
Original Assignee
Honeywell Specialty Chemicals Seelze GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Specialty Chemicals Seelze GmbH filed Critical Honeywell Specialty Chemicals Seelze GmbH
Publication of CN1346331A publication Critical patent/CN1346331A/zh
Application granted granted Critical
Publication of CN1319851C publication Critical patent/CN1319851C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/09—Bromine; Hydrogen bromide
    • C01B7/093—Hydrogen bromide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/01—Chlorine; Hydrogen chloride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C01B7/195—Separation; Purification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Gas Separation By Absorption (AREA)
  • ing And Chemical Polishing (AREA)
CNB008058881A 1999-03-29 2000-03-29 使用气态氟化氢制备高纯溶液的方法 Expired - Fee Related CN1319851C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19914243.2 1999-03-29
DE19914243A DE19914243A1 (de) 1999-03-29 1999-03-29 Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff

Publications (2)

Publication Number Publication Date
CN1346331A CN1346331A (zh) 2002-04-24
CN1319851C true CN1319851C (zh) 2007-06-06

Family

ID=7902836

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008058881A Expired - Fee Related CN1319851C (zh) 1999-03-29 2000-03-29 使用气态氟化氢制备高纯溶液的方法

Country Status (13)

Country Link
EP (1) EP1171379B1 (https=)
JP (1) JP4084929B2 (https=)
KR (1) KR100742575B1 (https=)
CN (1) CN1319851C (https=)
AT (1) ATE321009T1 (https=)
AU (1) AU4291300A (https=)
BR (1) BR0009387A (https=)
CA (1) CA2368441A1 (https=)
DE (2) DE19914243A1 (https=)
HK (1) HK1045977A1 (https=)
IL (1) IL145623A0 (https=)
MX (1) MXPA01009861A (https=)
WO (1) WO2000058208A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153095B2 (en) * 1999-03-29 2012-04-10 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
EP1509476A1 (en) * 2002-06-05 2005-03-02 Honeywell International Inc. Method for producing highly pure anhydrous solutions containing hydrogen fluoride
US7192860B2 (en) 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
TWI282814B (en) * 2002-09-13 2007-06-21 Daikin Ind Ltd Etchant and etching method
CN1326771C (zh) * 2005-10-18 2007-07-18 自贡市金典化工有限公司 碘化铵的生产方法
CN102774813A (zh) * 2011-05-12 2012-11-14 特力生有限公司 氢氟酸制造方法
CN110369126B (zh) * 2019-08-05 2020-06-23 潍坊奇为新材料科技有限公司 一种高饱和磁通量导磁介质

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
CH664978A5 (en) * 1985-06-25 1988-04-15 Industrieorientierte Forsch Etching oxidic material - with hydrogen fluoride soln. in organic cpd. including nitrogen cpd. forming complex, esp. pyridine, useful in optical industry
DD281173A5 (de) * 1989-04-04 1990-08-01 Nuenchritz Chemie Verfahren zur herstellung von hochreinem, kristallisierten ammoniumfluorid
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5336356A (en) * 1992-05-22 1994-08-09 Mitsubishi Denki Kabushiki Kaisha Apparatus for treating the surface of a semiconductor substrate
EP0679607A1 (en) * 1994-04-28 1995-11-02 Phillips Petroleum Company Transportation of hydrogen fluoride
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
EP0887323A1 (en) * 1997-06-25 1998-12-30 International Business Machines Corporation Selective etching of silicate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2520947A (en) * 1946-04-08 1950-09-05 Phillips Petroleum Co Recovery of hydrogen halides
US2537076A (en) * 1948-08-25 1951-01-09 Standard Oil Co Hydrogen fluoride recovery
FR1477742A (fr) * 1966-03-11 1967-04-21 Pechiney Saint Gobain Procédé d'extraction et de concentration de l'acide fluorhydrique gazeux par des solvants aminés
US4629610A (en) * 1985-05-10 1986-12-16 Dow Chemical Co. Hydrogen fluoride recovery process
DD254373A1 (de) * 1986-12-09 1988-02-24 Nuenchritz Chemie Verfahren zur gewinnung hochreiner fluorwasserstoffsaeure

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4230523A (en) * 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
CH664978A5 (en) * 1985-06-25 1988-04-15 Industrieorientierte Forsch Etching oxidic material - with hydrogen fluoride soln. in organic cpd. including nitrogen cpd. forming complex, esp. pyridine, useful in optical industry
DD281173A5 (de) * 1989-04-04 1990-08-01 Nuenchritz Chemie Verfahren zur herstellung von hochreinem, kristallisierten ammoniumfluorid
US5336356A (en) * 1992-05-22 1994-08-09 Mitsubishi Denki Kabushiki Kaisha Apparatus for treating the surface of a semiconductor substrate
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
EP0679607A1 (en) * 1994-04-28 1995-11-02 Phillips Petroleum Company Transportation of hydrogen fluoride
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
EP0887323A1 (en) * 1997-06-25 1998-12-30 International Business Machines Corporation Selective etching of silicate

Also Published As

Publication number Publication date
WO2000058208A3 (de) 2001-04-26
ATE321009T1 (de) 2006-04-15
AU4291300A (en) 2000-10-16
KR100742575B1 (ko) 2007-08-02
HK1045977A1 (zh) 2002-12-20
DE50012445D1 (de) 2006-07-13
IL145623A0 (en) 2002-06-30
JP2002540257A (ja) 2002-11-26
CN1346331A (zh) 2002-04-24
CA2368441A1 (en) 2000-10-05
DE19914243A1 (de) 2000-10-05
BR0009387A (pt) 2002-01-29
MXPA01009861A (es) 2003-06-24
JP4084929B2 (ja) 2008-04-30
KR20020024577A (ko) 2002-03-30
EP1171379A2 (de) 2002-01-16
EP1171379B1 (de) 2006-03-22
WO2000058208A2 (de) 2000-10-05

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