KR100719612B1 - 초전도체 형성 방법 및 반응기 - Google Patents
초전도체 형성 방법 및 반응기 Download PDFInfo
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- KR100719612B1 KR100719612B1 KR1020047001533A KR20047001533A KR100719612B1 KR 100719612 B1 KR100719612 B1 KR 100719612B1 KR 1020047001533 A KR1020047001533 A KR 1020047001533A KR 20047001533 A KR20047001533 A KR 20047001533A KR 100719612 B1 KR100719612 B1 KR 100719612B1
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- superconducting material
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- gas
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- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- JIDMEYQIXXJQCC-UHFFFAOYSA-L copper;2,2,2-trifluoroacetate Chemical compound [Cu+2].[O-]C(=O)C(F)(F)F.[O-]C(=O)C(F)(F)F JIDMEYQIXXJQCC-UHFFFAOYSA-L 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- LZJJVTQGPPWQFS-UHFFFAOYSA-L copper;propanoate Chemical compound [Cu+2].CCC([O-])=O.CCC([O-])=O LZJJVTQGPPWQFS-UHFFFAOYSA-L 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 125000002346 iodo group Chemical group I* 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000012703 sol-gel precursor Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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Abstract
Description
Claims (52)
- 기판 표면 상에 플루오르화 바륨(barium fluoride)을 포함하는 막을 제공하는 단계;상기 막 상으로 제 1 반응가스 혼합물(reactant gas mixture)을 상기 기판의 상기 표면에 대해 적어도 5˚의 각도로 충돌시키는 단계; 및상기 막 상으로 상기 제 1 반응 가스 혼합물을 충돌시키는 동안 상기 기판의 상기 표면상에 초전도 물질을 제공하기 위하여 상기 기판을 제 1 온도로 가열하는 단계를 포함하는 방법.
- 제1항에 있어서,상기 각도가 상기 기판의 상기 표면에 대해 적어도 10˚인 방법.
- 제1항에 있어서,상기 막의 표면 상으로 상기 제 1 반응 가스 혼합물을 충돌시키기에 앞서, 상기 막은 구리 산화물 및 이트륨 산화물을 더 포함하는 방법.
- 제1항에 있어서,상기 제 1 반응 가스 혼합물은 수분을 포함하는 방법.
- 제1항에 있어서,상기 제 1 온도는 적어도 675℃인 방법.
- 제1항에 있어서,상기 기판이 제 1 온도인 동안, 제 2 반응 가스 혼합물을 상기 기판의 상기 표면쪽으로 향하게 하는 방법.
- 제6항에 있어서,상기 제 1 반응 가스 혼합물은 상기 제 2 반응 가스 혼합물과 상이한 방법.
- 제6항에 있어서,상기 제 2 반응 가스 혼합물이 상기 기판의 상기 표면쪽으로 향하고 있는 동안, 상기 초전도 물질의 온도는 상기 제 1 온도와 동일한 방법.
- 제8항에 있어서,상기 제 1 온도는 적어도 675℃인 방법.
- 제6항에 있어서,상기 제 2 반응 가스 혼합물은 상기 기판의 상기 표면에 대해 적어도 5˚의 각도로 상기 기판의 상기 표면쪽으로 향하는 방법.
- 제1항에 있어서,상기 기판은 합금을 포함하는 방법.
- 제 11 항에 있어서,상기 기판은 상기 합금 위에 배치된 적어도 하나의 버퍼층을 더 포함하는 방법.
- 제1항에 있어서,상기 기판의 상기 표면상에 전구 물질 용액(precursor solution)을 제공하는 단계; 및상기 기판의 상기 표면상에 플루오르화 바륨을 포함하는 막을 제공하도록 상기 전구 물질 용액을 처리하는 단계를 포함하는 방법.
- 초전도 물질 형성 방법으로서,제 1 아티클(article)을 형성하도록 기판의 표면상에 플루오르화 바륨을 포함하는 막을 제공하는 단계;상기 기판의 상기 표면상에 초전도 물질을 형성하도록 상기 제 1 아티클을 반응기(reactor)의 제 1 영역 내의 제 1 가스 환경에 노출시키면서 상기 제 1 아티클을 가열하여 상기 기판의 상기 표면상이 초전도체를 포함하는 제 2 아티클을 형성하는 단계;상기 반응기의 제 2 영역으로 상기 제 2 아티클을 이동시키는 단계; 및실질적으로 상기 막에 존재하는 상기 플루오르화 바륨 전체가 상기 초전도 물질로 변환되도록 상기 제 2 아티클을 상기 반응기의 상기 제 2 영역 내의 제 2 가스 환경에 노출시키는 단계를 포함하고,상기 제1 가스 환경은, 상기 기판의 표면에 대하여 적어도 5°의 각도로 상기 막에 부딪히는 제1 반응가스를 포함하거나, 혹은, 상기 제2 가스 환경은, 상기 기판의 표면에 대하여 적어도 5°의 각도로 상기 막에 부딪히는 제2 반응가스를 포함하는 것을 특징으로 하는 초전도 물질 형성 방법.
- 제14항에 있어서,상기 제 1 아티클이 상기 제 1 영역 내에서 적어도 675℃의 온도로 가열되는 초전도 물질 형성 방법.
- 제14항에 있어서,상기 제 1 영역 내의 상기 제1 아티클의 온도는, 상기 제2 영역 내의 상기 제2 아티클의 온도와 동일한 초전도 물질 형성 방법.
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- 제14항에 있어서,상기 기판은 합금을 포함하는 초전도 물질 형성 방법.
- 제19항에 있어서,상기 기판은 상기 합금상에 배치된 적어도 하나의 버퍼층을 더 포함하는 초전도 물질 형성 방법.
- 제14항에 있어서,상기 반응기가 관상로(tube furnace)를 포함하는 초전도 물질 형성 방법.
- 제14항에 있어서,상기 기판의 상기 표면상에 전구 물질 용액을 제공하는 단계; 및상기 기판의 상기 표면상에 상기 막을 제공하도록 상기 전구 물질 용액을 가열하는 단계를 더 포함하는 초전도 물질 형성 방법.
- 초전도 물질 형성 방법으로서,상기 초전도 물질을 형성하기 위한 플루오르화 바륨을 포함한 막의 표면상에 반응 가스를 충돌시키는 단계를 포함하되,상기 초전도 물질은 기판의 표면에 의하여 지지되고(supported), 상기 초전도 물질은 상기 기판의 상기 표면에 실질적으로 수직한 방향에서 적어도 초당 1Å의 c-축 성장률을 가지고,상기 반응 가스는, 상기 기판의 표면에 대하여 적어도 5°의 각도로 상기 막에 부딪히는 것을 특징으로 하는 초전도 물질 형성 방법.
- 제23항에 있어서,상기 초전도 물질은 상기 기판의 상기 표면에 실질적으로 수직한 방향에서 적어도 초당 2Å의 c-축 성장률을 갖는 초전도 물질 형성 방법.
- 제23항에 있어서,상기 초전도 물질은 상기 기판의 상기 표면에 실질적으로 수직한 방향에서 적어도 초당 3Å의 c-축 성장률을 갖는 초전도 물질 형성 방법.
- 초전도 물질 형성 방법으로서,기판의 표면상에 플루오르화 바륨을 포함하는 막을 제공하는 단계; 및상기 기판의 상기 표면상에 상기 초전도 물질을 형성하기 위하여 상기 막의 표면상에 반응 가스를 충돌시키는 단계를 포함하고,상기 초전도 물질의 표면상 제 1 지점에 배치된 상기 초전도 물질의 일부는 상기 기판의 상기 표면에 실질적으로 수직한 방향에서 제 1 c-축 성장률을 가지고, 상기 제 1 지점과 적어도 5센티미터 떨어져 있는 상기 초전도 물질의 표면상의 제 2 지점에 배치된 상기 초전도 물질의 일부는 상기 기판의 상기 표면에 실질적으로 수직한 방향에서 상기 제 1 c-축 성장률과 실질적으로 동일한 제 2 c-축 성장률을 가지며,상기 반응 가스는, 상기 기판의 표면에 대하여 적어도 5°의 각도로 상기 막에 부딪히는 것을 특징으로 하는 초전도 물질 형성 방법.
- 제26항에 있어서,상기 초전도 물질의 상기 표면의 상기 제 1 및 제 2 지점이 적어도 10센티미터 떨어져 있는 초전도 물질 형성 방법.
- 제26항에 있어서,상기 초전도 물질의 상기 표면의 상기 제 1 및 제 2 지점이 적어도 15센티미터 떨어져 있는 초전도 물질 형성 방법.
- 초전도체 형성 방법으로서,기판의 표면상에 플루오르화 바륨을 포함하는 막을 제공하는 단계;상기 막의 표면에 접촉시키기에 앞서 반응 가스를 가열하는 단계; 및상기 초전도체를 형성하도록 상기 막의 상기 표면상에 상기 가열된 반응 가스를 충돌시키는 단계를 포함하고,상기 가열된 가스는, 상기 기판의 표면에 대하여 적어도 5°의 각도로 상기 막에 부딪히는 것을 특징으로 하는 초전도체 형성 방법.
- 제29항에 있어서,상기 막의 상기 표면이 상기 가열된 반응 가스에 의하여 접촉되기 이전에 실질적으로 예열되지 않는 초전도체 형성 방법.
- 제29항에 있어서,상기 반응 가스는 상기 막에 접촉하기에 앞서 적어도 100℃의 온도로 가열되는 초전도체 형성 방법.
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- 제1항에 있어서,상기 기판의 상기 표면에 실질적으로 평행한 각도로 상기 기판의 상기 막에서 적어도 하나의 가스를 제거하는 단계를 더 포함하는 방법.
- 제14항에 있어서,상기 기판의 상기 표면에 실질적으로 평행한 각도로 상기 기판의 상기 막에서 적어도 하나의 가스를 제거하는 단계를 더 포함하는 초전도 물질 형성 방법.
- 제23항에 있어서,상기 기판의 상기 표면에 실질적으로 평행한 각도로 상기 막의 상기 표면에서 적어도 하나의 가스를 제거하는 단계를 더 포함하는 초전도 물질 형성 방법.
- 제26항에 있어서,상기 기판의 상기 표면에 실질적으로 평행한 각도로 상기 막의 상기 표면에서 적어도 하나의 가스를 제거하는 단계를 더 포함하는 초전도 물질 형성 방법.
- 제29항에 있어서,상기 기판의 상기 표면에 실질적으로 평행한 각도로 상기 막의 상기 표면에 서 적어도 하나의 가스를 제거하는 단계를 더 포함하는 초전도체 형성 방법.
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- 2002-07-30 EP EP02805695A patent/EP1419538B1/en not_active Expired - Lifetime
- 2002-07-30 US US10/208,134 patent/US6797313B2/en not_active Expired - Lifetime
- 2002-07-30 AU AU2002365423A patent/AU2002365423A1/en not_active Abandoned
- 2002-07-30 DE DE60218697T patent/DE60218697T2/de not_active Expired - Lifetime
-
2006
- 2006-05-17 JP JP2006138050A patent/JP2006228754A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2003067672A3 (en) | 2004-03-18 |
CN1539172A (zh) | 2004-10-20 |
JP2005516882A (ja) | 2005-06-09 |
US20030127051A1 (en) | 2003-07-10 |
JP2006228754A (ja) | 2006-08-31 |
DE60218697D1 (de) | 2007-04-19 |
DE60218697T2 (de) | 2007-11-08 |
CN100367525C (zh) | 2008-02-06 |
WO2003067672A2 (en) | 2003-08-14 |
EP1419538A2 (en) | 2004-05-19 |
KR20040043173A (ko) | 2004-05-22 |
US6797313B2 (en) | 2004-09-28 |
EP1419538B1 (en) | 2007-03-07 |
AU2002365423A8 (en) | 2003-09-02 |
AU2002365423A1 (en) | 2003-09-02 |
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