DE60218697D1 - Verfahren und reaktoren zur herstellung von supraleiterschichten - Google Patents

Verfahren und reaktoren zur herstellung von supraleiterschichten

Info

Publication number
DE60218697D1
DE60218697D1 DE60218697T DE60218697T DE60218697D1 DE 60218697 D1 DE60218697 D1 DE 60218697D1 DE 60218697 T DE60218697 T DE 60218697T DE 60218697 T DE60218697 T DE 60218697T DE 60218697 D1 DE60218697 D1 DE 60218697D1
Authority
DE
Germany
Prior art keywords
supercial
reactors
layers
producing
supercial layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60218697T
Other languages
English (en)
Other versions
DE60218697T2 (de
Inventor
Leslie G Fritzemeier
Darren P Verebelyi
Martin W Rupich
Wei Zhang
Qi Li
Xiaoping Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
American Superconductor Corp
Original Assignee
American Superconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Superconductor Corp filed Critical American Superconductor Corp
Application granted granted Critical
Publication of DE60218697D1 publication Critical patent/DE60218697D1/de
Publication of DE60218697T2 publication Critical patent/DE60218697T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
    • C04B35/4508—Type 1-2-3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3215—Barium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
    • C04B2235/445—Fluoride containing anions, e.g. fluosilicate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/787—Oriented grains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49014—Superconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60218697T 2001-07-31 2002-07-30 Verfahren und reaktoren zur herstellung von supraleiterschichten Expired - Lifetime DE60218697T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30895701P 2001-07-31 2001-07-31
US308957P 2001-07-31
PCT/US2002/024101 WO2003067672A2 (en) 2001-07-31 2002-07-30 Methods and reactors for forming superconductor layers

Publications (2)

Publication Number Publication Date
DE60218697D1 true DE60218697D1 (de) 2007-04-19
DE60218697T2 DE60218697T2 (de) 2007-11-08

Family

ID=27734196

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60218697T Expired - Lifetime DE60218697T2 (de) 2001-07-31 2002-07-30 Verfahren und reaktoren zur herstellung von supraleiterschichten

Country Status (8)

Country Link
US (1) US6797313B2 (de)
EP (1) EP1419538B1 (de)
JP (2) JP2005516882A (de)
KR (1) KR100719612B1 (de)
CN (1) CN100367525C (de)
AU (1) AU2002365423A1 (de)
DE (1) DE60218697T2 (de)
WO (1) WO2003067672A2 (de)

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US20040131773A1 (en) * 2000-08-07 2004-07-08 Venkat Selvamanickam Fabrication of high curret coated high temperature superconducting tapes
US20030130129A1 (en) * 2001-07-13 2003-07-10 Massachusetts Institute Of Technology Vacuum processing for fabrication of superconducting films fabricated by metal-organic processing
JP3725085B2 (ja) * 2002-03-05 2005-12-07 株式会社東芝 超電導層及びその製造方法
US20040016401A1 (en) * 2002-07-26 2004-01-29 Metal Oxide Technologies, Inc. Method and apparatus for forming superconductor material on a tape substrate
US20060063680A1 (en) * 2002-07-26 2006-03-23 Metal Oxide Technologies, Inc. System and method for joining superconductivity tape
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
US20050065035A1 (en) * 2003-06-10 2005-03-24 Rupich Martin W. Superconductor methods and reactors
US7531205B2 (en) * 2003-06-23 2009-05-12 Superpower, Inc. High throughput ion beam assisted deposition (IBAD)
ITTO20030693A1 (it) * 2003-09-11 2005-03-12 Edison Termoelettrica Spa Metodo per formare strati con tessitura biassiale su substrati
US8227019B2 (en) * 2003-12-15 2012-07-24 Superpower Inc. High-throughput ex-situ method for rare-earth-barium-copper-oxide (REBCO) film growth
US20050159298A1 (en) * 2004-01-16 2005-07-21 American Superconductor Corporation Oxide films with nanodot flux pinning centers
US7261776B2 (en) * 2004-03-30 2007-08-28 American Superconductor Corporation Deposition of buffer layers on textured metal surfaces
US20050223984A1 (en) * 2004-04-08 2005-10-13 Hee-Gyoun Lee Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US7338683B2 (en) * 2004-05-10 2008-03-04 Superpower, Inc. Superconductor fabrication processes
US7582328B2 (en) * 2004-08-20 2009-09-01 American Superconductor Corporation Dropwise deposition of a patterned oxide superconductor
US7496390B2 (en) * 2004-08-20 2009-02-24 American Superconductor Corporation Low ac loss filamentary coated superconductors
US7463915B2 (en) * 2004-08-20 2008-12-09 American Superconductor Corporation Stacked filamentary coated superconductors
US7622424B2 (en) * 2004-10-01 2009-11-24 American Superconductor Corporation Thick superconductor films with improved performance
US7816303B2 (en) * 2004-10-01 2010-10-19 American Superconductor Corporation Architecture for high temperature superconductor wire
US7622426B2 (en) * 2004-10-07 2009-11-24 Brookhaven Science Associates, Llc Methods of controlling hydrogen fluoride pressure during chemical fabrication processes
JP4401992B2 (ja) * 2005-03-25 2010-01-20 財団法人国際超電導産業技術研究センター テープ状酸化物超電導線の製造方法及びその製造装置
WO2006110382A2 (en) * 2005-03-31 2006-10-19 American Superconductor Corporation Mesh-type stabilizer for filamentary coated superconductors
ES2553261T3 (es) * 2005-07-29 2015-12-07 American Superconductor Corporation Cables y bobinas superconductores a altas temperaturas
WO2007025062A2 (en) * 2005-08-25 2007-03-01 Wakonda Technologies, Inc. Photovoltaic template
JP4716324B2 (ja) * 2005-12-26 2011-07-06 古河電気工業株式会社 超電導体用基材およびその製造方法
US7674751B2 (en) * 2006-01-10 2010-03-09 American Superconductor Corporation Fabrication of sealed high temperature superconductor wires
JP4690246B2 (ja) * 2006-05-19 2011-06-01 住友電気工業株式会社 超電導薄膜材料およびその製造方法
WO2008118127A1 (en) * 2006-07-21 2008-10-02 American Superconductor Corporation Low resistance splice for high temperature superconductor wires
US7902120B2 (en) * 2006-07-24 2011-03-08 American Superconductor Corporation High temperature superconductors having planar magnetic flux pinning centers and methods for making the same
DE102007007567B4 (de) * 2007-02-15 2009-07-30 Zenergy Power Gmbh Verfahren zum Herstellen eines HTSL-Bandes
US7893006B2 (en) * 2007-03-23 2011-02-22 American Superconductor Corporation Systems and methods for solution-based deposition of metallic cap layers for high temperature superconductor wires
US8195260B2 (en) 2008-07-23 2012-06-05 American Superconductor Corporation Two-sided splice for high temperature superconductor laminated wires
WO2010088366A1 (en) * 2009-01-28 2010-08-05 Wakonda Technologies, Inc. Large-grain crystalline thin-film structures and devices and methods for forming the same
US8530845B2 (en) * 2009-02-04 2013-09-10 Trustees Of Boston University Synthesis of advanced scintillators via vapor deposition techniques
US20100270653A1 (en) * 2009-04-24 2010-10-28 Christopher Leitz Crystalline thin-film photovoltaic structures and methods for forming the same
JP5096422B2 (ja) 2009-07-10 2012-12-12 住友電気工業株式会社 基板および超電導線材の製造方法
ES2567462T3 (es) 2010-02-05 2016-04-22 Sunam Co. Ltd. Método para la formación de un hilo cerámico
US9045821B2 (en) 2010-03-02 2015-06-02 Sumitomo Metal Mining Co., Ltd. Laminate, method for producing same, and functional element using same
US8428671B2 (en) 2010-03-31 2013-04-23 American Superconductor Corporation Thick oxide film by single coating
ES2394395T3 (es) * 2010-07-19 2013-01-31 Bruker Hts Gmbh Método de producción de un conductor recubierto de HTS y conducto recubiertor de HTS con pérdidas reducidas
DE102010031741B4 (de) * 2010-07-21 2012-09-20 Siemens Aktiengesellschaft Verfahren und Anordnung zur Herstellung von supraleitenden Schichten auf Substraten
JP5688804B2 (ja) * 2011-04-27 2015-03-25 住友電気工業株式会社 酸化物超電導薄膜層形成用の中間層、酸化物超電導薄膜層および酸化物超電導薄膜線材
GB2498565B (en) * 2012-01-20 2014-09-17 Siemens Plc Methods for forming joints between magnesium diboride conductors
US8703651B2 (en) 2012-07-06 2014-04-22 Dale Richard Harshman Layered ionic superconductor
CN108796474B (zh) * 2018-06-15 2020-05-12 电子科技大学 一种基于溶液法同质外延MgO薄膜的制备方法
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
JP7278111B2 (ja) 2019-03-08 2023-05-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
CN113774348B (zh) * 2021-09-22 2023-06-02 季华实验室 一种具有非晶氧化钒薄膜的高温超导体及其制备方法和高温超导线圈

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CA2378833A1 (en) * 1999-07-23 2001-02-01 American Superconductor Corporation Enhanced high temperature coated superconductors

Also Published As

Publication number Publication date
KR100719612B1 (ko) 2007-05-17
US20030127051A1 (en) 2003-07-10
AU2002365423A8 (en) 2003-09-02
EP1419538A2 (de) 2004-05-19
JP2005516882A (ja) 2005-06-09
DE60218697T2 (de) 2007-11-08
US6797313B2 (en) 2004-09-28
EP1419538B1 (de) 2007-03-07
WO2003067672A3 (en) 2004-03-18
AU2002365423A1 (en) 2003-09-02
CN100367525C (zh) 2008-02-06
JP2006228754A (ja) 2006-08-31
KR20040043173A (ko) 2004-05-22
WO2003067672A2 (en) 2003-08-14
CN1539172A (zh) 2004-10-20

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