KR100716933B1 - 감광성 수지 조성물 - Google Patents
감광성 수지 조성물 Download PDFInfo
- Publication number
- KR100716933B1 KR100716933B1 KR1020050091728A KR20050091728A KR100716933B1 KR 100716933 B1 KR100716933 B1 KR 100716933B1 KR 1020050091728 A KR1020050091728 A KR 1020050091728A KR 20050091728 A KR20050091728 A KR 20050091728A KR 100716933 B1 KR100716933 B1 KR 100716933B1
- Authority
- KR
- South Korea
- Prior art keywords
- photosensitive resin
- resin composition
- acrylate
- photosensitive
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
| 구분 | 모노머 |
| HHPA | 12 |
| EO | 36 |
| IEM | 22 |
| [주] HHPA: 헥사하이드로 프탈산 EO: 에틸렌 옥사이드 IEM: 2-이소시아네이토에틸 메타크릴레이트 | |
| 구분 (중량%) | 실시예 | 비교예 | |||||
| 1 | 2 | 3 | 1 | 2 | 3 | ||
| A | 모노머 1 | 10 | 10 | 10 | 10 | 10 | 10 |
| B | SC-2703 | 20 | - | 10 | 30 | - | 15 |
| TX-46 | - | 20 | 10 | - | 30 | 15 | |
| 아크릴레이트계 가교성 올리고머 | 10 | 10 | 10 | - | - | - | |
| 알칼리 가용성 화합물 | 10 | 10 | 10 | 10 | 10 | 10 | |
| 광중합개시제 | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 | 1.5 | |
| 광증감제 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | |
| 염료 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | |
| 용제 | 48 | 48 | 48 | 48 | 48 | 48 | |
| [주] A: 2 개의 우레탄 결합을 가지는 아크릴레이트 모노머 (PGMEA 30 % 포함) B: 우레탄 계열의 가교성 모노머(SC-2703: 미원상사, TX-46: 네가미 화학) 아크릴레이트계 가교성 올리고머 : M2031(에틸렌옥사이드 30개가 부가된 비스페놀A 다이메타크릴레이트 알칼리 가용성 화합물: CAP(셀룰로오스 아세테이트 프탈레이트, 와코 퓨어 케미칼) 광증감제 : A-DMA(트리(4-디에틸아미노페닐)메탄(트리아릴메탄계 광증감제, 호도가야케미칼 제조) 광중합개시제 : 바스프사 루시린 TPO 용제: MEK(메틸 에틸 케톤) | |||||||
| 구분 | 실시예 | 비교예 | ||||
| 1 | 2 | 3 | 1 | 2 | 3 | |
| 접착력 | 115 gf | 98 gf | 95 gf | 100 gf | 86 gf | 68 gf |
| 구분 | 실시예 | 비교예 | |||||
| 1 | 2 | 3 | 1 | 2 | 3 | ||
| 해상도 | 현상 후 | 50 ㎛ | 50 ㎛ | 50 ㎛ | 80 ㎛ | 80 ㎛ | 80 ㎛ |
| 샌드 후 | 50 ㎛ | 55 ㎛ | 50 ㎛ | 80 ㎛ | 80 ㎛ | 80 ㎛ | |
| 구분 | 실시예 1 | 실시예 2 | 실시예 3 | 비교예 1 | 비교예 2 | 비교예 3 |
| 텐팅 강도 | 5.2 ㎏/f | 4.8 ㎏/f | 4.8 ㎏/f | 0.2 ㎏/f | 1.0 ㎏/f | 1.1 ㎏/f |
Claims (12)
- a) 2 개의 우레탄 결합을 가지는 아크릴레이트 모노머 1 내지 30 중량%;b) 적어도 2 개의 에틸렌계 이중결합을 가지는 우레탄계의 가교성 모노머 10 내지 60 중량%;c) 아크릴레이트계 가교성 올리고머 3 내지 15 중량%;d) 알칼리 가용성 화합물 5 내지 15 중량%;e) 광중합 개시제 0.5 내지 10 중량%; 및f) 잔량의 용제를 포함하는 감광성 수지 조성물.
- 제1항에 있어서,상기 아크릴레이트 모노머의 평균분자량이 1,000 내지 10,000인 것을 특징으로 하는 감광성 수지 조성물.
- 제1항에 있어서,상기 b)의 가교성 모노머가 디이소시아네이트 화합물과 디올 화합물의 반응생성물에 (메타)아크릴레이트 화합물을 반응시켜 얻어지는 우레탄 (메타)아크릴레이트 올리고머인 것을 특징으로 하는 감광성 수지 조성물.
- 제1항에 있어서,상기 c)의 아크릴레이트계 가교성 올리고머가 에틸렌 옥사이드가 부가된 비스페놀 A 다이아크릴레이트, 에틸렌 옥사이드가 부가된 비스페놀 A 다이메타아크릴레이트, 프로필렌 옥사이드기가 부가된 비스페놀 A 다이아크릴레이트, 프로필렌 옥사이드가 부가된 비스페놀 A 다이메타아크릴레이트, 에틸렌 옥사이드기가 부가된 다이아크릴레이트, 에틸렌 옥사이드기가 부가된 다이메타크릴레이트, 프로필렌 옥사이드가 부가된 다이아크릴레이트, 또는 프로필렌 옥사이드가 부가된 다이메타크 릴레이트인 것을 특징으로 하는 감광성 수지 조성물.
- 제1항에 있어서,상기 d)의 알칼리 가용성 화합물이 셀룰로오스 아세테이트 프탈레이트(cellulose acetate phthalate, CAP), 히드록시 프로필 메틸 셀룰로오스 프탈레이트(hydroxy propryl methyl cellulose phthalate, HPMCP), 및 에틸 히드록시 에틸 셀룰로오스 프탈레이트(ethyl hydroxy ethyl cellulose phthalate, EHECP)로 이루어지는 군으로부터 1종 이상 선택되는 것을 특징으로 하는 감광성 수지 조성물.
- 제1항에 있어서,상기 d) 광중합 개시제가 2,4-비스트리클로로메틸-6-p-메톡시스틸-s-트라이진, 2-p-메톡시스틸-4,6-비스트리클로로메틸-s-트리아진, 2,4-트리클로로메틸-6-트리아진, 2,4-트리클로로메틸-4-메틸나프틸-6-트리아진, 벤조페논, p-(디에틸아미노)벤조페논, 2,2-디클로로-4-페녹시아세토페논, 2,2'-디에톡시아세토페논, 2,2'-디부톡시아세토페논, 2-히드록시-2-메틸프로리오페논, p-t-부틸트리클로로아세토페논, 디페닐 (2,4,6-트리메틸벤조일) 포스핀 옥사이드, 비스(2,4,6-트리메틸벤조일) 페닐 포스핀 옥사이드, 2-메틸티오크산톤, 2-이소부틸티오크산톤, 2-도데실티오크산톤, 2,4-디메틸티오크산톤, 2,4-디에틸티오크산톤, 및 2,2'-비스-2-클로로페닐-4,5,4',5'-테트라페닐-2'-1,2'-비이미다졸 화합물로 이루어지는 군으로부터 1 종 이상 선택되는 것을 특징으로 하는 감광성 수지 조성물.
- 제1항에 있어서,상기 감광성 수지 조성물이 염료, 발색제, 중합억제제, 계면활성제 또는 가소제를 추가로 포함하는 것을 특징으로 하는 감광성 수지 조성물.
- 제1항 내지 제8항 중 어느 한 항의 감광성 수지 조성물을 기재필름에 코팅하여 건조시킨 감광성 수지막을 포함하는 감광성 드라이필름 레지스트.
- 제9항에 있어서,상기 감광성 수지막 위에 보호필름층을 더욱 포함하는 감광성 드라이필름 레지스트.
- 디스플레이의 패턴형성방법에 있어서,제1항 내지 제8항 중 어느 한 항의 감광성 수지 조성물을 이용하는 것을 특징으로 하는 디스플레이의 패턴형성방법.
- 제11항에 있어서,상기 디스플레이의 패턴은 유기발광 다이오드의 홀 캡 가공인 것을 특징으로 하는 디스플레이의 패턴형성방법.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050091728A KR100716933B1 (ko) | 2005-09-30 | 2005-09-30 | 감광성 수지 조성물 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050091728A KR100716933B1 (ko) | 2005-09-30 | 2005-09-30 | 감광성 수지 조성물 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070036818A KR20070036818A (ko) | 2007-04-04 |
| KR100716933B1 true KR100716933B1 (ko) | 2007-05-14 |
Family
ID=38158816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020050091728A Expired - Fee Related KR100716933B1 (ko) | 2005-09-30 | 2005-09-30 | 감광성 수지 조성물 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100716933B1 (ko) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004109748A (ja) | 2002-09-20 | 2004-04-08 | Nippon Synthetic Chem Ind Co Ltd:The | 平面画像表示装置用隔壁 |
| JP2004318047A (ja) | 2003-03-31 | 2004-11-11 | Sumitomo Bakelite Co Ltd | 感光性樹脂組成物、積層体、配線板およびフレキシブル配線板 |
-
2005
- 2005-09-30 KR KR1020050091728A patent/KR100716933B1/ko not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004109748A (ja) | 2002-09-20 | 2004-04-08 | Nippon Synthetic Chem Ind Co Ltd:The | 平面画像表示装置用隔壁 |
| JP2004318047A (ja) | 2003-03-31 | 2004-11-11 | Sumitomo Bakelite Co Ltd | 感光性樹脂組成物、積層体、配線板およびフレキシブル配線板 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070036818A (ko) | 2007-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101464312B1 (ko) | 저온 경화 가능한 감광성 수지 조성물 | |
| KR101073620B1 (ko) | 감광성 수지 조성물 | |
| CN120988008B (zh) | 一种用于感光树脂组合物的二氨基磷酸蒽酯、其感光树脂组合物、感光干膜及应用 | |
| JP2008233617A (ja) | サンドブラスト用感光性樹脂組成物及びその積層体 | |
| JP2008185949A (ja) | サンドブラスト用感光性樹脂組成物及び積層体 | |
| JP2018084591A (ja) | 感光性樹脂組成物、感光性エレメント、サンドブラスト用マスク材、及び被処理体の表面加工方法 | |
| KR101142631B1 (ko) | 샌드블라스트 레지스트용 감광성 수지 조성물 및 드라이필름 포토레지스트 | |
| JPH10239840A (ja) | サンドブラスト用感光性樹脂組成物及びその用途 | |
| KR20070036818A (ko) | 감광성 수지 조성물 | |
| KR102177312B1 (ko) | 감광성 수지 조성물 및 이를 이용한 드라이 필름 포토레지스트, 감광성 엘리먼트, 회로기판, 및 디스플레이 장치 | |
| JP2002062645A (ja) | サンドブラスト用感光性樹脂積層体 | |
| KR102250827B1 (ko) | 감광성 수지층, 및 이를 이용한 드라이 필름 포토레지스트, 감광성 엘리먼트, 회로기판, 및 디스플레이 장치 | |
| JP2006023369A (ja) | サンドブラスト用感光性樹脂積層体 | |
| JPH11188631A (ja) | サンドブラスト用感光性樹脂組成物及びその用途 | |
| JP5284742B2 (ja) | 感光性樹脂組成物、感光性樹脂積層体、被加工基材の表面加工方法及びプラズマディスプレイパネルの背面板の製造方法 | |
| JP3283239B2 (ja) | 感光性樹脂組成物 | |
| KR101071420B1 (ko) | 샌드블라스트 레지스트용 감광성 수지 조성물 및 이로부터제조된 드라이 필름 포토레지스트 | |
| JP4044189B2 (ja) | 感光性樹脂組成物 | |
| JP4497862B2 (ja) | サンドブラスト用感光性樹脂積層体 | |
| TWI572987B (zh) | 乾膜光阻用光敏樹脂組成物 | |
| JPWO2014119562A1 (ja) | 感光性樹脂組成物、感光性エレメント、サンドブラスト用マスク材、及び被処理体の表面加工方法 | |
| KR20200001490U (ko) | 샌드 블라스트용 감광성 수지 구성체 | |
| KR20140147526A (ko) | 감광성 수지 조성물 및 이로부터 제조된 드라이 필름 포토레지스트 | |
| JP2001117225A (ja) | 感光性樹脂組成物 | |
| JP2006054069A (ja) | プラズマディスプレイパネルの背面板の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
|
| D14-X000 | Search report completed |
St.27 status event code: A-1-2-D10-D14-srh-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| FPAY | Annual fee payment |
Payment date: 20100426 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20110411 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| FPAY | Annual fee payment |
Payment date: 20120423 Year of fee payment: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20130313 Year of fee payment: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20140401 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| FPAY | Annual fee payment |
Payment date: 20150318 Year of fee payment: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20160308 Year of fee payment: 10 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20170505 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20170505 |

