KR100709130B1 - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR100709130B1
KR100709130B1 KR1019990037619A KR19990037619A KR100709130B1 KR 100709130 B1 KR100709130 B1 KR 100709130B1 KR 1019990037619 A KR1019990037619 A KR 1019990037619A KR 19990037619 A KR19990037619 A KR 19990037619A KR 100709130 B1 KR100709130 B1 KR 100709130B1
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South Korea
Prior art keywords
film
electrode
diffusion barrier
insulating film
reaction
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Expired - Fee Related
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KR1019990037619A
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English (en)
Korean (ko)
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KR20000022925A (ko
Inventor
토리이카즈요시
미키히로시
후지사키요시히사
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals

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  • Semiconductor Memories (AREA)
KR1019990037619A 1998-09-10 1999-09-06 반도체 장치 및 그 제조방법 Expired - Fee Related KR100709130B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25628798A JP3931445B2 (ja) 1998-09-10 1998-09-10 半導体装置の製造方法
JP98-256287 1998-09-10

Publications (2)

Publication Number Publication Date
KR20000022925A KR20000022925A (ko) 2000-04-25
KR100709130B1 true KR100709130B1 (ko) 2007-04-18

Family

ID=17290566

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990037619A Expired - Fee Related KR100709130B1 (ko) 1998-09-10 1999-09-06 반도체 장치 및 그 제조방법

Country Status (4)

Country Link
US (2) US6822276B1 (https=)
JP (1) JP3931445B2 (https=)
KR (1) KR100709130B1 (https=)
TW (1) TW447114B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100428790B1 (ko) * 2001-06-26 2004-04-28 삼성전자주식회사 확장된 플레이트 라인을 갖는 강유전체 메모리소자 및 그제조방법
US6734477B2 (en) * 2001-08-08 2004-05-11 Agilent Technologies, Inc. Fabricating an embedded ferroelectric memory cell
KR100450669B1 (ko) * 2002-01-30 2004-10-01 삼성전자주식회사 산소 침투 경로 및 캡슐화 장벽막을 구비하는 강유전체메모리 소자 및 그 제조 방법
KR100604871B1 (ko) * 2004-06-17 2006-07-31 삼성전자주식회사 상보형 불휘발성 메모리 소자와 그 동작 방법과 그 제조 방법과 그를 포함하는 논리소자 및 반도체 장치
JP4798979B2 (ja) * 2004-09-28 2011-10-19 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリの製造方法
EP1758153A2 (en) * 2005-08-24 2007-02-28 Tokyo Electron Limited Perovskite type capacitor and method of manufacturing the same
US7960774B2 (en) 2005-12-05 2011-06-14 Electronics And Telecommunications Research Institute Memory devices including dielectric thin film and method of manufacturing the same
JP6540791B2 (ja) * 2015-02-27 2019-07-10 株式会社村田製作所 可変容量素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960030423A (ko) * 1995-01-31 1996-08-17 세키사와 다다시 반도체 기억장치 및 그 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02288368A (ja) 1989-04-28 1990-11-28 Seiko Epson Corp 半導体装置の製造方法
JP2898686B2 (ja) 1990-03-06 1999-06-02 株式会社日立製作所 半導体記憶装置およびその製造方法
JPH0590606A (ja) 1991-09-25 1993-04-09 Seiko Epson Corp 半導体装置
US5478772A (en) * 1993-04-02 1995-12-26 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
JPH0714993A (ja) * 1993-06-18 1995-01-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3256358B2 (ja) 1993-12-17 2002-02-12 三井化学株式会社 高屈折率プラスチックレンズ用組成物およびレンズ
US5416042A (en) * 1994-06-09 1995-05-16 International Business Machines Corporation Method of fabricating storage capacitors using high dielectric constant materials
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
JP3388089B2 (ja) * 1996-04-25 2003-03-17 シャープ株式会社 不揮発性半導体メモリ素子の製造方法
DE19640246A1 (de) * 1996-09-30 1998-04-02 Siemens Ag Halbleiteranordnung mit geschützter Barriere für eine Stapelzelle
US6043529A (en) * 1996-09-30 2000-03-28 Siemens Aktiengesellschaft Semiconductor configuration with a protected barrier for a stacked cell
US6693318B1 (en) * 1997-12-18 2004-02-17 Infineon Technologies North America Reduced diffusion of a mobile specie from a metal oxide ceramic
US6211035B1 (en) * 1998-09-09 2001-04-03 Texas Instruments Incorporated Integrated circuit and method
KR100343287B1 (ko) * 1999-09-21 2002-07-15 윤종용 고집적 강유전체 메모리 소자의 형성 방법
KR100560803B1 (ko) * 2004-02-04 2006-03-13 삼성전자주식회사 캐패시터를 갖는 반도체 소자 및 그 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960030423A (ko) * 1995-01-31 1996-08-17 세키사와 다다시 반도체 기억장치 및 그 제조방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
1019960030423 *

Also Published As

Publication number Publication date
US20050074936A1 (en) 2005-04-07
TW447114B (en) 2001-07-21
JP3931445B2 (ja) 2007-06-13
US6822276B1 (en) 2004-11-23
JP2000091509A (ja) 2000-03-31
KR20000022925A (ko) 2000-04-25

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