TW447114B - Semiconductor device and the manufacturing method thereof - Google Patents

Semiconductor device and the manufacturing method thereof Download PDF

Info

Publication number
TW447114B
TW447114B TW088113639A TW88113639A TW447114B TW 447114 B TW447114 B TW 447114B TW 088113639 A TW088113639 A TW 088113639A TW 88113639 A TW88113639 A TW 88113639A TW 447114 B TW447114 B TW 447114B
Authority
TW
Taiwan
Prior art keywords
film
electrode
reaction
semiconductor device
preventing
Prior art date
Application number
TW088113639A
Other languages
English (en)
Chinese (zh)
Inventor
Kazunari Torii
Hiroshi Miki
Yoshihisa Fujisaki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW447114B publication Critical patent/TW447114B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals

Landscapes

  • Semiconductor Memories (AREA)
TW088113639A 1998-09-10 1999-08-10 Semiconductor device and the manufacturing method thereof TW447114B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25628798A JP3931445B2 (ja) 1998-09-10 1998-09-10 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW447114B true TW447114B (en) 2001-07-21

Family

ID=17290566

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088113639A TW447114B (en) 1998-09-10 1999-08-10 Semiconductor device and the manufacturing method thereof

Country Status (4)

Country Link
US (2) US6822276B1 (https=)
JP (1) JP3931445B2 (https=)
KR (1) KR100709130B1 (https=)
TW (1) TW447114B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100428790B1 (ko) * 2001-06-26 2004-04-28 삼성전자주식회사 확장된 플레이트 라인을 갖는 강유전체 메모리소자 및 그제조방법
US6734477B2 (en) * 2001-08-08 2004-05-11 Agilent Technologies, Inc. Fabricating an embedded ferroelectric memory cell
KR100450669B1 (ko) * 2002-01-30 2004-10-01 삼성전자주식회사 산소 침투 경로 및 캡슐화 장벽막을 구비하는 강유전체메모리 소자 및 그 제조 방법
KR100604871B1 (ko) * 2004-06-17 2006-07-31 삼성전자주식회사 상보형 불휘발성 메모리 소자와 그 동작 방법과 그 제조 방법과 그를 포함하는 논리소자 및 반도체 장치
JP4798979B2 (ja) * 2004-09-28 2011-10-19 Ｏｋｉセミコンダクタ株式会社 強誘電体メモリの製造方法
EP1758153A2 (en) * 2005-08-24 2007-02-28 Tokyo Electron Limited Perovskite type capacitor and method of manufacturing the same
US7960774B2 (en) 2005-12-05 2011-06-14 Electronics And Telecommunications Research Institute Memory devices including dielectric thin film and method of manufacturing the same
JP6540791B2 (ja) * 2015-02-27 2019-07-10 株式会社村田製作所 可変容量素子

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02288368A (ja) 1989-04-28 1990-11-28 Seiko Epson Corp 半導体装置の製造方法
JP2898686B2 (ja) 1990-03-06 1999-06-02 株式会社日立製作所 半導体記憶装置およびその製造方法
JPH0590606A (ja) 1991-09-25 1993-04-09 Seiko Epson Corp 半導体装置
US5478772A (en) * 1993-04-02 1995-12-26 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
JPH0714993A (ja) * 1993-06-18 1995-01-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3256358B2 (ja) 1993-12-17 2002-02-12 三井化学株式会社 高屈折率プラスチックレンズ用組成物およびレンズ
US5416042A (en) * 1994-06-09 1995-05-16 International Business Machines Corporation Method of fabricating storage capacitors using high dielectric constant materials
JP3623834B2 (ja) * 1995-01-31 2005-02-23 富士通株式会社 半導体記憶装置及びその製造方法
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon
JP3388089B2 (ja) * 1996-04-25 2003-03-17 シャープ株式会社 不揮発性半導体メモリ素子の製造方法
DE19640246A1 (de) * 1996-09-30 1998-04-02 Siemens Ag Halbleiteranordnung mit geschützter Barriere für eine Stapelzelle
US6043529A (en) * 1996-09-30 2000-03-28 Siemens Aktiengesellschaft Semiconductor configuration with a protected barrier for a stacked cell
US6693318B1 (en) * 1997-12-18 2004-02-17 Infineon Technologies North America Reduced diffusion of a mobile specie from a metal oxide ceramic
US6211035B1 (en) * 1998-09-09 2001-04-03 Texas Instruments Incorporated Integrated circuit and method
KR100343287B1 (ko) * 1999-09-21 2002-07-15 윤종용 고집적 강유전체 메모리 소자의 형성 방법
KR100560803B1 (ko) * 2004-02-04 2006-03-13 삼성전자주식회사 캐패시터를 갖는 반도체 소자 및 그 제조방법

Also Published As

Publication number Publication date
US20050074936A1 (en) 2005-04-07
JP3931445B2 (ja) 2007-06-13
US6822276B1 (en) 2004-11-23
KR100709130B1 (ko) 2007-04-18
JP2000091509A (ja) 2000-03-31
KR20000022925A (ko) 2000-04-25

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