KR100706847B1 - 상부 전극 상에 스트론튬 루테늄 산화물 보호층을형성하는 방법 - Google Patents

상부 전극 상에 스트론튬 루테늄 산화물 보호층을형성하는 방법 Download PDF

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KR100706847B1
KR100706847B1 KR1020010048646A KR20010048646A KR100706847B1 KR 100706847 B1 KR100706847 B1 KR 100706847B1 KR 1020010048646 A KR1020010048646 A KR 1020010048646A KR 20010048646 A KR20010048646 A KR 20010048646A KR 100706847 B1 KR100706847 B1 KR 100706847B1
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layer
upper electrode
ferroelectric
crystallized
cap
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KR20020070624A (ko
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선샨
히커트조지
마쯔우라가쯔요시
사이또다께야스
오자와소이치로
사또나오유끼
후지끼미쯔시
미하라사또루
스캇크로스제프리
호리이요시마사
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후지쯔 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Semiconductor Memories (AREA)
KR1020010048646A 2001-02-28 2001-08-13 상부 전극 상에 스트론튬 루테늄 산화물 보호층을형성하는 방법 Expired - Fee Related KR100706847B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/797,005 2001-02-28
US09/797,005 US6674633B2 (en) 2001-02-28 2001-02-28 Process for producing a strontium ruthenium oxide protective layer on a top electrode

Publications (2)

Publication Number Publication Date
KR20020070624A KR20020070624A (ko) 2002-09-10
KR100706847B1 true KR100706847B1 (ko) 2007-04-13

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KR1020010048646A Expired - Fee Related KR100706847B1 (ko) 2001-02-28 2001-08-13 상부 전극 상에 스트론튬 루테늄 산화물 보호층을형성하는 방법

Country Status (4)

Country Link
US (1) US6674633B2 (enExample)
JP (1) JP4104342B2 (enExample)
KR (1) KR100706847B1 (enExample)
TW (1) TWI240987B (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN103972044A (zh) * 2013-02-01 2014-08-06 中芯国际集成电路制造(上海)有限公司 Mim电容器的制备方法以及半导体器件的制备方法

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US6674633B2 (en) * 2001-02-28 2004-01-06 Fujitsu Limited Process for producing a strontium ruthenium oxide protective layer on a top electrode
KR20030041495A (ko) * 2001-11-20 2003-05-27 주식회사 하이닉스반도체 반도체 소자 및 제조 방법
JP4228569B2 (ja) * 2001-11-28 2009-02-25 セイコーエプソン株式会社 電子デバイス用基板の製造方法及び電子デバイスの製造方法
CN100336226C (zh) * 2001-12-14 2007-09-05 株式会社日立制作所 半导体器件
US6573587B1 (en) * 2002-05-28 2003-06-03 Oki Electric Industry Co., Ltd. Metal oxide capacitor with hydrogen diffusion blocking covering
US6785119B2 (en) * 2002-11-29 2004-08-31 Infineon Technologies Ag Ferroelectric capacitor and process for its manufacture
JP3924286B2 (ja) * 2003-10-31 2007-06-06 Ｔｄｋ株式会社 積層セラミック電子部品の製造方法
EP1557665A1 (fr) * 2004-01-21 2005-07-27 CSEM Centre Suisse d'Electronique et de Microtechnique SA Système d'electrodes pour capteur electrochimique
JP4589092B2 (ja) * 2004-12-03 2010-12-01 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100591776B1 (ko) * 2005-01-03 2006-06-26 삼성전자주식회사 강유전체 메모리 소자 및 그 제조방법
JP4438659B2 (ja) * 2005-03-24 2010-03-24 Ｔｄｋ株式会社 積層セラミック電子部品の製造方法
KR100725451B1 (ko) * 2005-06-07 2007-06-07 삼성전자주식회사 강유전체 캐패시터의 제조 방법 및 이를 이용한 반도체장치의 제조 방법
US20070212797A1 (en) * 2006-03-08 2007-09-13 Suk-Hun Choi Method of forming a ferroelectric device
JP4983172B2 (ja) * 2006-09-12 2012-07-25 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US7709359B2 (en) * 2007-09-05 2010-05-04 Qimonda Ag Integrated circuit with dielectric layer
KR20100122960A (ko) * 2008-03-26 2010-11-23 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 루테늄 및 알칼리 토금속 함유 3원 산화물 필름의 증착
JP5502302B2 (ja) * 2008-09-26 2014-05-28 ローム株式会社 半導体装置およびその製造方法
US7939442B2 (en) * 2009-04-10 2011-05-10 Micron Technology, Inc. Strontium ruthenium oxide interface
US8859047B2 (en) 2010-02-23 2014-10-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
US8395196B2 (en) 2010-11-16 2013-03-12 International Business Machines Corporation Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip
US20170133581A1 (en) * 2014-06-20 2017-05-11 Ulvac, Inc. Method of manufacturing multi-layered film and multi-layered film

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KR100199095B1 (ko) * 1995-12-27 1999-06-15 구본준 반도체 메모리 셀의 캐패시터 구조 및 그 제조방법
KR19990055174A (ko) * 1997-12-27 1999-07-15 김영환 누설전류가 감소된 하부전극을 갖는 강유전체 커패시터 형성 방법
KR20000027802A (ko) * 1998-10-29 2000-05-15 김영환 강유전체램 소자의 제조방법
JP2000208725A (ja) * 1998-11-10 2000-07-28 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2002314044A (ja) * 2001-02-28 2002-10-25 Fujitsu Ltd 集積半導体装置、強誘電体キャパシタ及び半導体装置の製造方法

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KR100292012B1 (ko) * 1995-06-28 2001-11-15 엔, 마이클 그로브 실리콘에집적된강유전체커패시터를위한장벽층
JP3171110B2 (ja) 1996-06-19 2001-05-28 ソニー株式会社 強誘電体キャパシタ構造の製造方法
US5990507A (en) * 1996-07-09 1999-11-23 Kabushiki Kaisha Toshiba Semiconductor device having ferroelectric capacitor structures
US6115281A (en) * 1997-06-09 2000-09-05 Telcordia Technologies, Inc. Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
US6172385B1 (en) * 1998-10-30 2001-01-09 International Business Machines Corporation Multilayer ferroelectric capacitor structure

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
KR100199095B1 (ko) * 1995-12-27 1999-06-15 구본준 반도체 메모리 셀의 캐패시터 구조 및 그 제조방법
KR19990055174A (ko) * 1997-12-27 1999-07-15 김영환 누설전류가 감소된 하부전극을 갖는 강유전체 커패시터 형성 방법
KR20000027802A (ko) * 1998-10-29 2000-05-15 김영환 강유전체램 소자의 제조방법
JP2000208725A (ja) * 1998-11-10 2000-07-28 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP2002314044A (ja) * 2001-02-28 2002-10-25 Fujitsu Ltd 集積半導体装置、強誘電体キャパシタ及び半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103972044A (zh) * 2013-02-01 2014-08-06 中芯国际集成电路制造(上海)有限公司 Mim电容器的制备方法以及半导体器件的制备方法

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Publication number Publication date
KR20020070624A (ko) 2002-09-10
US6674633B2 (en) 2004-01-06
JP4104342B2 (ja) 2008-06-18
US20020149040A1 (en) 2002-10-17
JP2002314044A (ja) 2002-10-25
TWI240987B (en) 2005-10-01

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