TWI240987B - Process for producing a strontium ruthenium oxide protective layer on a top electrode - Google Patents
Process for producing a strontium ruthenium oxide protective layer on a top electrode Download PDFInfo
- Publication number
- TWI240987B TWI240987B TW090125108A TW90125108A TWI240987B TW I240987 B TWI240987 B TW I240987B TW 090125108 A TW090125108 A TW 090125108A TW 90125108 A TW90125108 A TW 90125108A TW I240987 B TWI240987 B TW I240987B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- top electrode
- ferroelectric
- annealing
- ferroelectric capacitor
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000011241 protective layer Substances 0.000 title claims description 56
- 230000008569 process Effects 0.000 title description 9
- JFWLFXVBLPDVDZ-UHFFFAOYSA-N [Ru]=O.[Sr] Chemical compound [Ru]=O.[Sr] JFWLFXVBLPDVDZ-UHFFFAOYSA-N 0.000 title 1
- 239000003990 capacitor Substances 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000012298 atmosphere Substances 0.000 claims abstract description 30
- 238000000137 annealing Methods 0.000 claims abstract description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 230000001590 oxidative effect Effects 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 179
- 239000000463 material Substances 0.000 claims description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 11
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 210000002816 gill Anatomy 0.000 claims description 3
- 229910001923 silver oxide Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229910003449 rhenium oxide Inorganic materials 0.000 claims 1
- 230000001131 transforming effect Effects 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 description 22
- 229910052739 hydrogen Inorganic materials 0.000 description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 20
- 230000015654 memory Effects 0.000 description 14
- 239000012790 adhesive layer Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 230000010287 polarization Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 238000006731 degradation reaction Methods 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052756 noble gas Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002353 SrRuO3 Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- XJFYLPNRLBQCQX-UHFFFAOYSA-N bismuth samarium Chemical compound [Sm].[Bi] XJFYLPNRLBQCQX-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052861 titanite Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/797,005 US6674633B2 (en) | 2001-02-28 | 2001-02-28 | Process for producing a strontium ruthenium oxide protective layer on a top electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI240987B true TWI240987B (en) | 2005-10-01 |
Family
ID=25169649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090125108A TWI240987B (en) | 2001-02-28 | 2001-10-11 | Process for producing a strontium ruthenium oxide protective layer on a top electrode |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6674633B2 (enExample) |
| JP (1) | JP4104342B2 (enExample) |
| KR (1) | KR100706847B1 (enExample) |
| TW (1) | TWI240987B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6674633B2 (en) * | 2001-02-28 | 2004-01-06 | Fujitsu Limited | Process for producing a strontium ruthenium oxide protective layer on a top electrode |
| KR20030041495A (ko) * | 2001-11-20 | 2003-05-27 | 주식회사 하이닉스반도체 | 반도체 소자 및 제조 방법 |
| JP4228569B2 (ja) * | 2001-11-28 | 2009-02-25 | セイコーエプソン株式会社 | 電子デバイス用基板の製造方法及び電子デバイスの製造方法 |
| JPWO2003052829A1 (ja) * | 2001-12-14 | 2005-04-28 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| US6573587B1 (en) * | 2002-05-28 | 2003-06-03 | Oki Electric Industry Co., Ltd. | Metal oxide capacitor with hydrogen diffusion blocking covering |
| US6785119B2 (en) * | 2002-11-29 | 2004-08-31 | Infineon Technologies Ag | Ferroelectric capacitor and process for its manufacture |
| JP3924286B2 (ja) * | 2003-10-31 | 2007-06-06 | Ｔｄｋ株式会社 | 積層セラミック電子部品の製造方法 |
| EP1557665A1 (fr) * | 2004-01-21 | 2005-07-27 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Système d'electrodes pour capteur electrochimique |
| JP4589092B2 (ja) * | 2004-12-03 | 2010-12-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| KR100591776B1 (ko) * | 2005-01-03 | 2006-06-26 | 삼성전자주식회사 | 강유전체 메모리 소자 및 그 제조방법 |
| JP4438659B2 (ja) * | 2005-03-24 | 2010-03-24 | Ｔｄｋ株式会社 | 積層セラミック電子部品の製造方法 |
| KR100725451B1 (ko) * | 2005-06-07 | 2007-06-07 | 삼성전자주식회사 | 강유전체 캐패시터의 제조 방법 및 이를 이용한 반도체장치의 제조 방법 |
| US20070212797A1 (en) * | 2006-03-08 | 2007-09-13 | Suk-Hun Choi | Method of forming a ferroelectric device |
| JP4983172B2 (ja) * | 2006-09-12 | 2012-07-25 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US7709359B2 (en) * | 2007-09-05 | 2010-05-04 | Qimonda Ag | Integrated circuit with dielectric layer |
| WO2009118708A1 (en) * | 2008-03-26 | 2009-10-01 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Deposition of ternary oxide films containing ruthenium and alkali earth metals |
| JP5502302B2 (ja) * | 2008-09-26 | 2014-05-28 | ローム株式会社 | 半導体装置およびその製造方法 |
| US7939442B2 (en) * | 2009-04-10 | 2011-05-10 | Micron Technology, Inc. | Strontium ruthenium oxide interface |
| US8859047B2 (en) | 2010-02-23 | 2014-10-14 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of ruthenium tetroxide as a precursor and reactant for thin film depositions |
| US8395196B2 (en) * | 2010-11-16 | 2013-03-12 | International Business Machines Corporation | Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip |
| CN103972044A (zh) * | 2013-02-01 | 2014-08-06 | 中芯国际集成电路制造(上海)有限公司 | Mim电容器的制备方法以及半导体器件的制备方法 |
| EP3159428A4 (en) * | 2014-06-20 | 2017-12-20 | ULVAC, Inc. | Multilayer film and method for manufacturing same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2225681C (en) * | 1995-06-28 | 2001-09-11 | Bell Communications Research, Inc. | Barrier layer for ferroelectric capacitor integrated on silicon |
| KR100199095B1 (ko) * | 1995-12-27 | 1999-06-15 | 구본준 | 반도체 메모리 셀의 캐패시터 구조 및 그 제조방법 |
| JP3171110B2 (ja) | 1996-06-19 | 2001-05-28 | ソニー株式会社 | 強誘電体キャパシタ構造の製造方法 |
| US5990507A (en) * | 1996-07-09 | 1999-11-23 | Kabushiki Kaisha Toshiba | Semiconductor device having ferroelectric capacitor structures |
| US6115281A (en) * | 1997-06-09 | 2000-09-05 | Telcordia Technologies, Inc. | Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors |
| KR100458084B1 (ko) * | 1997-12-27 | 2005-06-07 | 주식회사 하이닉스반도체 | 누설전류가 감소된 하부전극을 갖는 강유전체 커패시터 형성 방법 |
| KR100335399B1 (ko) * | 1998-10-29 | 2002-07-18 | 박종섭 | 강유전체램 소자의 제조방법 |
| US6172385B1 (en) * | 1998-10-30 | 2001-01-09 | International Business Machines Corporation | Multilayer ferroelectric capacitor structure |
| JP3249496B2 (ja) * | 1998-11-10 | 2002-01-21 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
| US6674633B2 (en) * | 2001-02-28 | 2004-01-06 | Fujitsu Limited | Process for producing a strontium ruthenium oxide protective layer on a top electrode |
-
2001
- 2001-02-28 US US09/797,005 patent/US6674633B2/en not_active Expired - Lifetime
- 2001-08-13 KR KR1020010048646A patent/KR100706847B1/ko not_active Expired - Fee Related
- 2001-10-11 TW TW090125108A patent/TWI240987B/zh not_active IP Right Cessation
-
2002
- 2002-02-19 JP JP2002042139A patent/JP4104342B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20020149040A1 (en) | 2002-10-17 |
| KR100706847B1 (ko) | 2007-04-13 |
| JP2002314044A (ja) | 2002-10-25 |
| KR20020070624A (ko) | 2002-09-10 |
| US6674633B2 (en) | 2004-01-06 |
| JP4104342B2 (ja) | 2008-06-18 |
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