KR100706093B1 - 발광 재료 및 유기 el 장치와 그 제조 방법 - Google Patents
발광 재료 및 유기 el 장치와 그 제조 방법 Download PDFInfo
- Publication number
- KR100706093B1 KR100706093B1 KR1020050075481A KR20050075481A KR100706093B1 KR 100706093 B1 KR100706093 B1 KR 100706093B1 KR 1020050075481 A KR1020050075481 A KR 1020050075481A KR 20050075481 A KR20050075481 A KR 20050075481A KR 100706093 B1 KR100706093 B1 KR 100706093B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- organic
- film
- film forming
- emitting layer
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000007788 liquid Substances 0.000 claims abstract description 32
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 29
- 239000002904 solvent Substances 0.000 claims abstract description 28
- 239000007791 liquid phase Substances 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims description 21
- 238000005191 phase separation Methods 0.000 abstract description 9
- -1 organic EL device Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 119
- 239000010408 film Substances 0.000 description 67
- 239000000243 solution Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 23
- 238000002347 injection Methods 0.000 description 18
- 239000007924 injection Substances 0.000 description 18
- 238000009835 boiling Methods 0.000 description 15
- 238000009832 plasma treatment Methods 0.000 description 15
- 239000010409 thin film Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 239000002798 polar solvent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- NPDIDUXTRAITDE-UHFFFAOYSA-N 1-methyl-3-phenylbenzene Chemical group CC1=CC=CC(C=2C=CC=CC=2)=C1 NPDIDUXTRAITDE-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- ZZLCFHIKESPLTH-UHFFFAOYSA-N 4-Methylbiphenyl Chemical group C1=CC(C)=CC=C1C1=CC=CC=C1 ZZLCFHIKESPLTH-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- HHNHBFLGXIUXCM-GFCCVEGCSA-N cyclohexylbenzene Chemical compound [CH]1CCCC[C@@H]1C1=CC=CC=C1 HHNHBFLGXIUXCM-GFCCVEGCSA-N 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- UOHMMEJUHBCKEE-UHFFFAOYSA-N prehnitene Chemical compound CC1=CC=C(C)C(C)=C1C UOHMMEJUHBCKEE-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- DTBDAFLSBDGPEA-UHFFFAOYSA-N 3-Methylquinoline Natural products C1=CC=CC2=CC(C)=CN=C21 DTBDAFLSBDGPEA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Chemical class 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000005678 ethenylene group Chemical class [H]C([*:1])=C([H])[*:2] 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 239000001022 rhodamine dye Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
Claims (6)
- 액상법에 의한 성막에 사용되는 성막 재료이고, 또한 발광층을 형성하기 위한 발광 재료로서,복수의 막 형성 성분과 이들 막 형성 성분을 용해하는 용매로 이루어지는 용액이고,형성하는 발광층 안에서의 각 막 형성 성분의 소망비에 편중되고, 상기 각 막 형성 성분이 상기 소망비와 같은 비로 조제되어 상기 용매에 용해되어 있으며,상기 용액의 소정 온도에서의 상기 각 막 형성 성분의 포화 농도가 상기 편중에 대응하여 편중되어 있는 것을 특징으로 하는 발광 재료.
- 제 1 항에 있어서,상기 막 형성 성분이 2종류이며, 형성하는 발광층 안에서의 각 막 형성 성분의 소망비가 x:y(단, x>y)라고 하면, 상기 용액의 상기 소정 온도에서의 상기 각 막 형성 성분의 포화 농도의 비가 (x±0.2x):y인 것을 특징으로 하는 발광 재료.
- 제 1 항 또는 제 2 항에 있어서,상기 막 형성 성분이 인광 재료에서의 호스트(host) 성분과 게스트(guest) 성분인 것을 특징으로 하는 발광 재료.
- 제 1 항에 있어서,상기 발광 재료가 액체 방울 토출법에 의한 성막에 사용되는 재료인 것을 특징으로 하는 발광 재료.
- 제 1 항에 기재된 발광 재료를 사용하여 성막하고, 그 후 상기의 소정 온도에서 건조함으로써 발광층을 형성하는 것을 특징으로 하는 유기 EL 장치의 제조 방법.
- 제 5 항에 기재된 유기 EL 장치의 제조 방법에 의해 얻어진 유기 EL 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004347203A JP4168999B2 (ja) | 2004-11-30 | 2004-11-30 | 発光材料及び有機el装置の製造方法 |
JPJP-P-2004-00347203 | 2004-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060060541A KR20060060541A (ko) | 2006-06-05 |
KR100706093B1 true KR100706093B1 (ko) | 2007-04-12 |
Family
ID=36566729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050075481A KR100706093B1 (ko) | 2004-11-30 | 2005-08-18 | 발광 재료 및 유기 el 장치와 그 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060113897A1 (ko) |
JP (1) | JP4168999B2 (ko) |
KR (1) | KR100706093B1 (ko) |
CN (1) | CN100574546C (ko) |
TW (1) | TWI284490B (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080032039A1 (en) * | 2006-08-07 | 2008-02-07 | Toppan Printing Co., Ltd. | Method of manufacturing organic electroluminescence device |
JP2008078181A (ja) * | 2006-09-19 | 2008-04-03 | Seiko Epson Corp | 有機el発光材料、及び有機el装置の製造方法 |
US8207667B2 (en) * | 2007-08-31 | 2012-06-26 | Sharp Kabushiki Kaisha | Organic EL display and manufacturing method thereof |
CN102113147A (zh) * | 2008-07-31 | 2011-06-29 | 三菱化学株式会社 | 有机场致发光元件用组合物、有机薄膜、有机场致发光元件、有机el显示装置及有机el照明 |
US8187916B2 (en) * | 2009-06-17 | 2012-05-29 | Universal Display Corporation | Liquid compositions for inkjet printing of organic layers or other uses |
EP2559079B1 (en) | 2010-04-12 | 2020-04-01 | Merck Patent GmbH | Composition and method for preparation of organic electronic devices |
KR20130044118A (ko) * | 2010-08-06 | 2013-05-02 | 파나소닉 주식회사 | 유기 el 표시 패널, 표시 장치, 및 유기 el 표시 패널의 제조 방법 |
WO2013118196A1 (ja) * | 2012-02-10 | 2013-08-15 | パナソニック株式会社 | 有機elパネルとその製造方法 |
KR20140081314A (ko) * | 2012-12-21 | 2014-07-01 | 삼성디스플레이 주식회사 | 발광 표시 장치 및 그 제조 방법 |
WO2019239998A1 (ja) * | 2018-06-12 | 2019-12-19 | 住友化学株式会社 | 有機エレクトロルミネッセンス素子 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010101319A (ko) * | 1999-10-25 | 2001-11-14 | 구사마 사부로 | 발광 장치 |
KR20030055121A (ko) * | 2001-12-26 | 2003-07-02 | 세이코 엡슨 가부시키가이샤 | 발수화 처리 방법, 박막 형성 방법 및 이 방법을 사용한유기 el 장치의 제조 방법, 유기 el 장치, 전자 기기 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1966607A (zh) * | 1998-12-28 | 2007-05-23 | 出光兴产株式会社 | 用于有机场致发光装置的材料 |
JP2001279134A (ja) * | 2000-03-31 | 2001-10-10 | Seiko Epson Corp | 吐出組成物及び機能膜作製法 |
JP2001341296A (ja) * | 2000-03-31 | 2001-12-11 | Seiko Epson Corp | インクジェット法による薄膜形成方法、インクジェット装置、有機el素子の製造方法、有機el素子 |
JP4021177B2 (ja) * | 2000-11-28 | 2007-12-12 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法および有機エレクトロルミネッセンス装置並びに電子機器 |
JP3896876B2 (ja) * | 2001-03-12 | 2007-03-22 | セイコーエプソン株式会社 | 膜の製造方法、機能素子の製造方法、電気光学装置の製造方法、及び電子機器の製造方法 |
TWI289156B (en) * | 2001-08-09 | 2007-11-01 | Ritek Corp | Phosphorescent material |
KR100478521B1 (ko) * | 2001-10-29 | 2005-03-28 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자용 고분자 발광 혼합 조성물 및 그를이용한 유기 전계 발광 소자 |
ATE401201T1 (de) * | 2001-12-20 | 2008-08-15 | Add Vision Inc | Siebdruckfähige, elektrolumineszierende polymertinte |
KR20020025918A (ko) * | 2002-02-15 | 2002-04-04 | 박병주 | 습식 공정으로 제작된 유기 반도체 디바이스 및 유기전계발광 소자 |
DE112004000832T5 (de) * | 2003-05-12 | 2006-03-23 | Sumitomo Chemical Co. Ltd. | Lichtemittierende Polymerzusammensetzung |
US20050067949A1 (en) * | 2003-09-30 | 2005-03-31 | Sriram Natarajan | Solvent mixtures for an organic electronic device |
JP4175397B2 (ja) * | 2006-06-28 | 2008-11-05 | セイコーエプソン株式会社 | 有機エレクトロルミネセンス装置の製造方法 |
JP2008130449A (ja) * | 2006-11-22 | 2008-06-05 | Alps Electric Co Ltd | 発光装置およびその製造方法 |
-
2004
- 2004-11-30 JP JP2004347203A patent/JP4168999B2/ja active Active
-
2005
- 2005-08-02 US US11/194,618 patent/US20060113897A1/en not_active Abandoned
- 2005-08-18 KR KR1020050075481A patent/KR100706093B1/ko active IP Right Grant
- 2005-09-13 CN CNB2005100995133A patent/CN100574546C/zh active Active
- 2005-09-30 TW TW094134294A patent/TWI284490B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010101319A (ko) * | 1999-10-25 | 2001-11-14 | 구사마 사부로 | 발광 장치 |
KR20030055121A (ko) * | 2001-12-26 | 2003-07-02 | 세이코 엡슨 가부시키가이샤 | 발수화 처리 방법, 박막 형성 방법 및 이 방법을 사용한유기 el 장치의 제조 방법, 유기 el 장치, 전자 기기 |
Also Published As
Publication number | Publication date |
---|---|
US20060113897A1 (en) | 2006-06-01 |
TW200621078A (en) | 2006-06-16 |
JP2006156824A (ja) | 2006-06-15 |
TWI284490B (en) | 2007-07-21 |
CN1784103A (zh) | 2006-06-07 |
JP4168999B2 (ja) | 2008-10-22 |
CN100574546C (zh) | 2009-12-23 |
KR20060060541A (ko) | 2006-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100706093B1 (ko) | 발광 재료 및 유기 el 장치와 그 제조 방법 | |
US7300686B2 (en) | Organic electro-luminescent device, manufacturing method for the same, and electronic equipment | |
US8877532B2 (en) | Method of manufacturing organic electroluminescence display device | |
US6087196A (en) | Fabrication of organic semiconductor devices using ink jet printing | |
US7056180B2 (en) | Manufacturing method of organic electroluminescent device, organic electroluminescent device, and electronic apparatus | |
US7198814B2 (en) | Compositions, methods for producing films, functional elements, methods for producing functional elements, method for producing electro-optical devices and methods for producing electronic apparatus | |
US20060046062A1 (en) | Method of producing a functional film, a coating liquid for forming a functional film and a functional device | |
JP2003282244A (ja) | 薄膜、薄膜の製造方法、薄膜製造装置、有機el装置、有機el装置の製造方法、有機el装置の製造装置、及び電子機器 | |
US20120252149A1 (en) | Method of manufacturing organic electroluminescence display device | |
US20050073249A1 (en) | Organic light-emitting device, manufacturing method thereof, and electronic apparatus thereof | |
US20110092076A1 (en) | Apparatus and method of vapor coating in an electronic device | |
KR100553858B1 (ko) | 전기광학장치, 그 제조방법 및 전자기기 | |
JP2005056614A (ja) | 有機エレクトロルミネッセンス素子の製造装置及びその製造方法 | |
JP4765857B2 (ja) | 有機el発光材料、及び有機el装置の製造方法 | |
JP2008078181A (ja) | 有機el発光材料、及び有機el装置の製造方法 | |
JP4285264B2 (ja) | 有機エレクトロルミネッセンス装置の製造方法 | |
JP2005158584A (ja) | パターン形成方法及び表示装置の製造方法 | |
JP2007095595A (ja) | 機能層の形成方法、有機半導体素子、発光素子及び電子機器 | |
JP2003338380A (ja) | 有機el正孔注入層用インクおよびその製造方法、有機el表示装置の製造方法、ならびに有機el表示装置 | |
JP4830941B2 (ja) | 有機el装置の製造方法 | |
JP4961694B2 (ja) | 有機el素子の製造方法 | |
JP2008186766A (ja) | 有機エレクトロルミネッセンス素子の製造方法 | |
CN101164178A (zh) | 制造显示装置的方法 | |
JP2005322436A (ja) | 有機el素子の製造方法及び装置、並びに有機el素子 | |
JP2006156258A (ja) | 有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130321 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140319 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20160318 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170302 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180316 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190319 Year of fee payment: 13 |