KR100704108B1 - 무산소 플라즈마 공정에서의 종점 검출 방법 - Google Patents

무산소 플라즈마 공정에서의 종점 검출 방법 Download PDF

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Publication number
KR100704108B1
KR100704108B1 KR1020000065250A KR20000065250A KR100704108B1 KR 100704108 B1 KR100704108 B1 KR 100704108B1 KR 1020000065250 A KR1020000065250 A KR 1020000065250A KR 20000065250 A KR20000065250 A KR 20000065250A KR 100704108 B1 KR100704108 B1 KR 100704108B1
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South Korea
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plasma
gas
signal
photoresist
endpoint
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Korean (ko)
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KR20010051436A (ko
Inventor
한큉그얀
삭티벨팔라니
루핀릭키알
칼도소앤드레길
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액셀리스 테크놀로지스, 인크.
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Assigned to 램 리써치 코포레이션 reassignment 램 리써치 코포레이션 권리의 전부이전등록 Assignors: 액셀리스 테크놀로지스, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G01N21/68—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using high frequency electric fields
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020000065250A 1999-11-05 2000-11-03 무산소 플라즈마 공정에서의 종점 검출 방법 Expired - Lifetime KR100704108B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/434,617 US6492186B1 (en) 1999-08-05 1999-11-05 Method for detecting an endpoint for an oxygen free plasma process
US9/434,617 1999-11-05
US09/434,617 1999-11-05

Publications (2)

Publication Number Publication Date
KR20010051436A KR20010051436A (ko) 2001-06-25
KR100704108B1 true KR100704108B1 (ko) 2007-04-05

Family

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KR1020000065250A Expired - Lifetime KR100704108B1 (ko) 1999-11-05 2000-11-03 무산소 플라즈마 공정에서의 종점 검출 방법

Country Status (6)

Country Link
US (1) US6492186B1 (https=)
EP (1) EP1098189B1 (https=)
JP (1) JP5051332B2 (https=)
KR (1) KR100704108B1 (https=)
DE (1) DE60021982T2 (https=)
TW (1) TWI239390B (https=)

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US7374696B2 (en) * 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
US20040195208A1 (en) * 2003-02-15 2004-10-07 Pavel Elizabeth G. Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
US7101805B2 (en) * 2003-05-09 2006-09-05 Unaxis Usa Inc. Envelope follower end point detection in time division multiplexed processes
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US20040235299A1 (en) * 2003-05-22 2004-11-25 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
US7147122B2 (en) * 2004-03-11 2006-12-12 Crown Packaging Technology, Inc. Easy open can end
US7312865B2 (en) 2004-03-31 2007-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for in situ monitoring of chamber peeling
JP2006128380A (ja) * 2004-10-28 2006-05-18 Toshiba Corp 半導体装置の製造方法および製造装置
DE102004061269A1 (de) * 2004-12-10 2006-06-14 Siemens Ag Verfahren zum Reinigen eines Werkstückes mit Halogenionen
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
JP2006303063A (ja) * 2005-04-19 2006-11-02 Elpida Memory Inc 半導体装置の製造方法
US7479191B1 (en) 2005-04-22 2009-01-20 Novellus Systems, Inc. Method for endpointing CVD chamber cleans following ultra low-k film treatments
KR100827435B1 (ko) * 2006-01-31 2008-05-06 삼성전자주식회사 반도체 소자에서 무산소 애싱 공정을 적용한 게이트 형성방법
EP2058844A1 (en) * 2007-10-30 2009-05-13 Interuniversitair Microelektronica Centrum (IMEC) Method of forming a semiconductor device
US8262800B1 (en) 2008-02-12 2012-09-11 Novellus Systems, Inc. Methods and apparatus for cleaning deposition reactors
US8591661B2 (en) * 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
JP6002411B2 (ja) * 2012-03-28 2016-10-05 芝浦メカトロニクス株式会社 Ｅｕｖマスク製造方法およびｅｕｖマスク製造装置
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
WO2016057990A2 (en) * 2014-10-10 2016-04-14 Orthobond, Inc. Method for detecting and analyzing surface films
KR102833984B1 (ko) 2020-08-31 2025-07-15 삼성전자주식회사 반도체 장치 제조 공정의 모니터링 방법 및 이를 포함하는 반도체 장치의 제조 방법
CN114628268B (zh) * 2022-05-12 2022-07-29 广东气派科技有限公司 一种防超时的芯片产品腐球检验工艺

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JPH05102089A (ja) * 1991-10-09 1993-04-23 Tokyo Electron Ltd ドライエツチング方法
US5811358A (en) * 1997-01-03 1998-09-22 Mosel Vitelic Inc. Low temperature dry process for stripping photoresist after high dose ion implantation
KR100263406B1 (ko) * 1993-08-23 2000-11-01 히가시 데쓰로 플라즈마처리의종점검지방법및장치
WO2001004707A1 (en) * 1999-07-07 2001-01-18 Advanced Micro Devices, Inc. Photoresist removal process using forming gas plasma

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JPH05102089A (ja) * 1991-10-09 1993-04-23 Tokyo Electron Ltd ドライエツチング方法
KR100263406B1 (ko) * 1993-08-23 2000-11-01 히가시 데쓰로 플라즈마처리의종점검지방법및장치
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WO2001004707A1 (en) * 1999-07-07 2001-01-18 Advanced Micro Devices, Inc. Photoresist removal process using forming gas plasma

Also Published As

Publication number Publication date
JP2001189305A (ja) 2001-07-10
DE60021982D1 (de) 2005-09-22
JP5051332B2 (ja) 2012-10-17
EP1098189B1 (en) 2005-08-17
TWI239390B (en) 2005-09-11
DE60021982T2 (de) 2006-07-06
KR20010051436A (ko) 2001-06-25
EP1098189A2 (en) 2001-05-09
EP1098189A3 (en) 2002-04-17
US6492186B1 (en) 2002-12-10

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