KR100629203B1 - 네가티브형 포토레지스트 조성물 - Google Patents

네가티브형 포토레지스트 조성물 Download PDF

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Publication number
KR100629203B1
KR100629203B1 KR1019990003492A KR19990003492A KR100629203B1 KR 100629203 B1 KR100629203 B1 KR 100629203B1 KR 1019990003492 A KR1019990003492 A KR 1019990003492A KR 19990003492 A KR19990003492 A KR 19990003492A KR 100629203 B1 KR100629203 B1 KR 100629203B1
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South Korea
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groups
substituent
formula
alkyl
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KR1019990003492A
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English (en)
Korean (ko)
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KR19990072386A (ko
Inventor
사토켄이치로오
Original Assignee
후지 샤신 필름 가부시기가이샤
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Application granted granted Critical
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Assigned to 후지필름 가부시키가이샤 reassignment 후지필름 가부시키가이샤 권리의 전부이전등록 Assignors: 후지필름 홀딩스 가부시끼가이샤
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
    • C07D498/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D498/04—Ortho-condensed systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
KR1019990003492A 1998-02-03 1999-02-03 네가티브형 포토레지스트 조성물 Expired - Lifetime KR100629203B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02216898A JP3865919B2 (ja) 1998-02-03 1998-02-03 ネガ型フォトレジスト組成物
JP98-22168 1998-02-03

Publications (2)

Publication Number Publication Date
KR19990072386A KR19990072386A (ko) 1999-09-27
KR100629203B1 true KR100629203B1 (ko) 2006-09-27

Family

ID=12075290

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990003492A Expired - Lifetime KR100629203B1 (ko) 1998-02-03 1999-02-03 네가티브형 포토레지스트 조성물

Country Status (3)

Country Link
US (1) US6103449A (https=)
JP (1) JP3865919B2 (https=)
KR (1) KR100629203B1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000015014A (ko) * 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
KR100400291B1 (ko) * 1998-11-27 2004-02-05 주식회사 하이닉스반도체 신규의포토레지스트용단량체,그의공중합체및이를이용한포토레지스트조성물
US6465147B1 (en) * 1998-12-31 2002-10-15 Hyundai Electronics Industries Co., Ltd. Cross-linker for photoresist, and process for forming a photoresist pattern using the same
JP3734012B2 (ja) * 1999-10-25 2006-01-11 信越化学工業株式会社 レジスト材料及びパターン形成方法
TWI257528B (en) * 1999-12-16 2006-07-01 Fuji Photo Film Co Ltd Positive resist composition
JP4105354B2 (ja) * 2000-01-17 2008-06-25 富士フイルム株式会社 ポジ型フォトレジスト組成物
KR100490278B1 (ko) * 2000-03-06 2005-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 재료 및 패턴 형성 방법
US6251560B1 (en) * 2000-05-05 2001-06-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers having lactone moiety
KR100506882B1 (ko) * 2000-07-13 2005-08-08 주식회사 하이닉스반도체 Ｔｉｐｓ용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
TW557304B (en) * 2000-09-14 2003-10-11 Shinetsu Chemical Co Polymer, resist composition and patterning process
CN1496496A (zh) * 2000-11-29 2004-05-12 纳幕尔杜邦公司 聚合物中的保护基,光刻胶及微细光刻的方法
KR100555287B1 (ko) * 2001-01-17 2006-03-03 신에쓰 가가꾸 고교 가부시끼가이샤 에테르 화합물, 고분자 화합물, 레지스트 재료 및 패턴형성 방법
JP4262422B2 (ja) * 2001-06-28 2009-05-13 富士フイルム株式会社 ポジ型フォトレジスト組成物及びそれを用いたパターン形成方法
JP4337602B2 (ja) * 2004-03-31 2009-09-30 日本ゼオン株式会社 感放射線組成物、積層体及びその製造方法並びに電子部品
TWI644929B (zh) 2013-11-26 2018-12-21 住友化學股份有限公司 樹脂、光阻組成物以及光阻圖案的製造方法
TWI637998B (zh) * 2013-11-26 2018-10-11 住友化學股份有限公司 樹脂、光阻組成物，以及光阻圖案之製造方法
US9514651B2 (en) 2014-08-19 2016-12-06 Here Global B.V. Optimal warning distance

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789278A2 (en) * 1996-02-09 1997-08-13 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4571375A (en) * 1983-10-24 1986-02-18 Benedikt George M Ring-opened polynorbornene negative photoresist with bisazide
US5932391A (en) * 1995-08-18 1999-08-03 Kabushiki Kaisha Toshiba Resist for alkali development
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3859353B2 (ja) * 1998-04-28 2006-12-20 富士通株式会社 ネガ型レジスト組成物およびレジストパターンの形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789278A2 (en) * 1996-02-09 1997-08-13 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition

Also Published As

Publication number Publication date
JP3865919B2 (ja) 2007-01-10
KR19990072386A (ko) 1999-09-27
US6103449A (en) 2000-08-15
JPH11218918A (ja) 1999-08-10

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