KR100621226B1 - 수송 중합 및 화학기상증착을 위한 신규한 증착 시스템 및 방법 - Google Patents

수송 중합 및 화학기상증착을 위한 신규한 증착 시스템 및 방법 Download PDF

Info

Publication number
KR100621226B1
KR100621226B1 KR1020007004417A KR20007004417A KR100621226B1 KR 100621226 B1 KR100621226 B1 KR 100621226B1 KR 1020007004417 A KR1020007004417 A KR 1020007004417A KR 20007004417 A KR20007004417 A KR 20007004417A KR 100621226 B1 KR100621226 B1 KR 100621226B1
Authority
KR
South Korea
Prior art keywords
delete delete
cracker
reactor
precursor
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020007004417A
Other languages
English (en)
Korean (ko)
Other versions
KR20010031400A (ko
Inventor
리청제이.
왕후이
포지아토지오반니안토니오
Original Assignee
캐논 유.에스.에이. 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 유.에스.에이. 인코포레이티드 filed Critical 캐논 유.에스.에이. 인코포레이티드
Publication of KR20010031400A publication Critical patent/KR20010031400A/ko
Application granted granted Critical
Publication of KR100621226B1 publication Critical patent/KR100621226B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020007004417A 1997-10-24 1998-10-15 수송 중합 및 화학기상증착을 위한 신규한 증착 시스템 및 방법 Expired - Lifetime KR100621226B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/958,352 1997-10-24
US8/958,352 1997-10-24
US08/958,352 US6086679A (en) 1997-10-24 1997-10-24 Deposition systems and processes for transport polymerization and chemical vapor deposition

Publications (2)

Publication Number Publication Date
KR20010031400A KR20010031400A (ko) 2001-04-16
KR100621226B1 true KR100621226B1 (ko) 2006-09-13

Family

ID=25500877

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007004417A Expired - Lifetime KR100621226B1 (ko) 1997-10-24 1998-10-15 수송 중합 및 화학기상증착을 위한 신규한 증착 시스템 및 방법

Country Status (5)

Country Link
US (1) US6086679A (cg-RX-API-DMAC10.html)
JP (1) JP4425461B2 (cg-RX-API-DMAC10.html)
KR (1) KR100621226B1 (cg-RX-API-DMAC10.html)
AU (1) AU1188899A (cg-RX-API-DMAC10.html)
WO (1) WO1999022043A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102052075B1 (ko) * 2013-03-28 2020-01-09 삼성디스플레이 주식회사 증착 장치, 이를 이용한 박막 형성 방법, 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3199006B2 (ja) * 1997-11-18 2001-08-13 日本電気株式会社 層間絶縁膜の形成方法および絶縁膜形成装置
KR20010071175A (ko) * 1998-05-01 2001-07-28 세슈 비. 데스 화학 기상 증착에 의해 증착된 옥사이드/유기 폴리머 다층박막
US6316055B1 (en) * 1998-05-01 2001-11-13 Virginia Tech Intellectual Properties, Inc. Near-room temperature thermal chemical vapor deposition of oxide films
JP4212707B2 (ja) * 1998-11-26 2009-01-21 スピードファム株式会社 ウエハ平坦化システム及びウエハ平坦化方法
JP3719021B2 (ja) * 1998-12-04 2005-11-24 信越半導体株式会社 シリコンウエーハの製造方法およびシリコンウエーハ
US6540838B2 (en) * 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
EP1208002A4 (en) * 1999-06-03 2006-08-02 Penn State Res Found MATERIALS WITH NETWORK OF SURFACE POROSITY COLUMNS DEPOSITED IN THIN FILM
US6495208B1 (en) 1999-09-09 2002-12-17 Virginia Tech Intellectual Properties, Inc. Near-room temperature CVD synthesis of organic polymer/oxide dielectric nanocomposites
US6329227B2 (en) * 2000-02-22 2001-12-11 Matsushita Electric Industrial Co., Ltd. Method of patterning organic polymer film and method for fabricating semiconductor device
US6596343B1 (en) * 2000-04-21 2003-07-22 Applied Materials, Inc. Method and apparatus for processing semiconductor substrates with hydroxyl radicals
JP2002009152A (ja) * 2000-06-21 2002-01-11 Nec Corp 半導体装置及びその製造方法
US6576564B2 (en) * 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
US7192645B2 (en) 2001-02-26 2007-03-20 Dielectric Systems, Inc. Porous low E (<2.0) thin films by transport co-polymerization
US7026052B2 (en) 2001-02-26 2006-04-11 Dielectric Systems, Inc. Porous low k(<2.0) thin film derived from homo-transport-polymerization
US20040255862A1 (en) * 2001-02-26 2004-12-23 Lee Chung J. Reactor for producing reactive intermediates for low dielectric constant polymer thin films
US20040055539A1 (en) * 2002-09-13 2004-03-25 Dielectric Systems, Inc. Reactive-reactor for generation of gaseous intermediates
US6881447B2 (en) 2002-04-04 2005-04-19 Dielectric Systems, Inc. Chemically and electrically stabilized polymer films
CN100524652C (zh) * 2001-07-05 2009-08-05 东京毅力科创株式会社 基片处理装置及基片处理方法
EP1470738A2 (en) * 2002-01-30 2004-10-27 N.V. Bekaert S.A. Heating in a vacuum atmosphere in the presence of a plasma
US6787185B2 (en) * 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
US6746970B2 (en) * 2002-06-24 2004-06-08 Macronix International Co., Ltd. Method of forming a fluorocarbon polymer film on a substrate using a passivation layer
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
US6783598B2 (en) * 2002-08-15 2004-08-31 Fibersense Technology Corp. Moisture barrier sealing of fiber optic coils
JP4372443B2 (ja) * 2003-04-01 2009-11-25 東京エレクトロン株式会社 処理装置および処理方法
JP4179041B2 (ja) * 2003-04-30 2008-11-12 株式会社島津製作所 有機el用保護膜の成膜装置、製造方法および有機el素子
US7611587B2 (en) * 2003-05-16 2009-11-03 Chow Peter P Thin-film deposition evaporator
US9257302B1 (en) 2004-03-25 2016-02-09 Novellus Systems, Inc. CVD flowable gap fill
US7309395B2 (en) 2004-03-31 2007-12-18 Dielectric Systems, Inc. System for forming composite polymer dielectric film
US6962871B2 (en) 2004-03-31 2005-11-08 Dielectric Systems, Inc. Composite polymer dielectric film
US7094661B2 (en) 2004-03-31 2006-08-22 Dielectric Systems, Inc. Single and dual damascene techniques utilizing composite polymer dielectric film
US20060201426A1 (en) * 2004-05-25 2006-09-14 Lee Chung J Reactor for Producing Reactive Intermediates for Transport Polymerization
US20060046044A1 (en) * 2004-08-24 2006-03-02 Lee Chung J Porous composite polymer dielectric film
US8986780B2 (en) 2004-11-19 2015-03-24 Massachusetts Institute Of Technology Method and apparatus for depositing LED organic film
US8128753B2 (en) 2004-11-19 2012-03-06 Massachusetts Institute Of Technology Method and apparatus for depositing LED organic film
US20060274474A1 (en) * 2005-06-01 2006-12-07 Lee Chung J Substrate Holder
JP4690148B2 (ja) * 2005-09-01 2011-06-01 株式会社アルバック 有機薄膜製造方法および光cvd装置
US7549905B2 (en) 2005-09-30 2009-06-23 International Display Systems, Inc. Method of encapsulating an organic light emitting device
US8039049B2 (en) * 2005-09-30 2011-10-18 Tokyo Electron Limited Treatment of low dielectric constant films using a batch processing system
US7621794B2 (en) 2005-11-09 2009-11-24 International Display Systems, Inc. Method of encapsulating an organic light-emitting device
US7947148B2 (en) * 2006-06-01 2011-05-24 The Regents Of The University Of Michigan Dry adhesion bonding
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US7799377B2 (en) 2006-12-07 2010-09-21 Electronics And Telecommunications Research Institute Organic/inorganic thin film deposition method
US20080156264A1 (en) * 2006-12-27 2008-07-03 Novellus Systems, Inc. Plasma Generator Apparatus
US8399047B2 (en) * 2007-03-22 2013-03-19 The Regents Of The Univeristy Of Michigan Multifunctional CVD coatings
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
JP5175927B2 (ja) * 2007-06-14 2013-04-03 マサチューセッツ インスティテュート オブ テクノロジー インク積層システム、積層装置、および制御システム
US8556389B2 (en) 2011-02-04 2013-10-15 Kateeva, Inc. Low-profile MEMS thermal printhead die having backside electrical connections
US7955840B2 (en) 2007-08-23 2011-06-07 Akonni Biosystems Thermal cycler for PCR including temperature control bladder
US7955841B2 (en) 2007-08-23 2011-06-07 Akonni Biosystems Temperature control device with a flexible temperature control surface
TWI364126B (en) * 2007-11-23 2012-05-11 Ind Tech Res Inst Plasma assisted apparatus for forming organic film
US20090226614A1 (en) * 2008-03-04 2009-09-10 Tokyo Electron Limited Porous gas heating device for a vapor deposition system
US9591738B2 (en) * 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
WO2009146744A1 (de) * 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
US11975546B2 (en) 2008-06-13 2024-05-07 Kateeva, Inc. Gas enclosure assembly and system
US8899171B2 (en) 2008-06-13 2014-12-02 Kateeva, Inc. Gas enclosure assembly and system
US9604245B2 (en) 2008-06-13 2017-03-28 Kateeva, Inc. Gas enclosure systems and methods utilizing an auxiliary enclosure
US10434804B2 (en) 2008-06-13 2019-10-08 Kateeva, Inc. Low particle gas enclosure systems and methods
US8383202B2 (en) 2008-06-13 2013-02-26 Kateeva, Inc. Method and apparatus for load-locked printing
US12018857B2 (en) 2008-06-13 2024-06-25 Kateeva, Inc. Gas enclosure assembly and system
US12064979B2 (en) 2008-06-13 2024-08-20 Kateeva, Inc. Low-particle gas enclosure systems and methods
US9048344B2 (en) 2008-06-13 2015-06-02 Kateeva, Inc. Gas enclosure assembly and system
US8916022B1 (en) 2008-09-12 2014-12-23 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US20100188457A1 (en) * 2009-01-05 2010-07-29 Madigan Connor F Method and apparatus for controlling the temperature of an electrically-heated discharge nozzle
JP5501807B2 (ja) * 2009-03-31 2014-05-28 東京エレクトロン株式会社 処理装置
EP2425470A2 (en) * 2009-05-01 2012-03-07 Kateeva, Inc. Method and apparatus for organic vapor printing
WO2012012376A1 (en) * 2010-07-22 2012-01-26 First Solar, Inc Deposition system
US9719169B2 (en) * 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
CN103229325B (zh) 2011-04-08 2018-02-16 卡帝瓦公司 用于利用面式滚筒印制的方法和设备
US8728239B2 (en) * 2011-07-29 2014-05-20 Asm America, Inc. Methods and apparatus for a gas panel with constant gas flow
JP6010621B2 (ja) 2011-08-09 2016-10-19 カティーバ, インコーポレイテッド 下向き印刷装置および方法
US9120344B2 (en) 2011-08-09 2015-09-01 Kateeva, Inc. Apparatus and method for control of print gap
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
KR101383255B1 (ko) * 2012-06-01 2014-04-10 삼화콘덴서공업주식회사 정전식 분말 코팅장치 및 이를 이용한 적층 세라믹 커패시터용 유전체 분말 코팅방법
JP2014049529A (ja) * 2012-08-30 2014-03-17 Tokyo Electron Ltd プラズマ処理装置及び金属の酸化膜を洗浄する方法
WO2014081817A2 (en) * 2012-11-20 2014-05-30 Massachusetts Institute Of Technology Fabrication and passivation of silicon surfaces
US8889225B2 (en) 2012-12-21 2014-11-18 The Gillette Company Chemical vapor deposition of fluorocarbon polymers
US20140299059A1 (en) * 2013-04-03 2014-10-09 Ofs Fitel, Llc Vapor delivery system
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10468279B2 (en) 2013-12-26 2019-11-05 Kateeva, Inc. Apparatus and techniques for thermal treatment of electronic devices
WO2015112454A1 (en) 2014-01-21 2015-07-30 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
CN106255775A (zh) * 2014-01-28 2016-12-21 Hzo股份有限公司 含构造成阻止热解管和相邻元件之间传热的导管的材料处理系统
JP6542245B2 (ja) * 2014-02-14 2019-07-10 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 射出アセンブリ付きの上方ドーム
EP3138123B1 (en) 2014-04-30 2021-06-02 Kateeva, Inc. Gas cushion apparatus and techniques for substrate coating
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
BR102014026134B1 (pt) * 2014-10-20 2022-09-27 Universidade Federal De Santa Catarina Processo e reator de plasma para tratamento termoquímico de superfície de peças metálicas
JP2016222984A (ja) * 2015-06-01 2016-12-28 株式会社フィルテック ヒートビーム成膜装置
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
JP6529129B2 (ja) * 2015-11-30 2019-06-12 株式会社フィルテック 成膜装置
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
JP7550450B2 (ja) * 2018-06-28 2024-09-13 リシナジー,インク. 炭化水素系廃棄物をオイルおよびガス燃料に変換するマイクロ波方法
CN109273339B (zh) * 2018-09-18 2021-03-19 惠科股份有限公司 一种反应室、干法刻蚀设备及刻蚀方法
GB201913140D0 (en) 2019-09-12 2019-10-30 Ucl Business Plc Methods and apparatuses for fabricating polymeric conformal coatings, parts coated with polymeric conformal coatings, and optical apparatus
GB201913141D0 (en) * 2019-09-12 2019-10-30 Ucl Business Plc Methods and apparatuses for fabricating polymeric conformal coatings, parts coated with polymeric conformal coatings, and optical apparatus
CN114950900A (zh) * 2022-04-22 2022-08-30 上海酷聚科技有限公司 一种有机膜层的制备方法、有机膜层结构及沉积设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268202A (en) * 1992-10-09 1993-12-07 Rensselaer Polytechnic Institute Vapor deposition of parylene-F using 1,4-bis (trifluoromethyl) benzene
US5536319A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including an atmospheric shroud and inert gas source

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3274267A (en) * 1963-09-23 1966-09-20 Union Carbide Corp Cyclic alpha-perfluoro-di-p-xylylenes
US3332891A (en) * 1963-09-23 1967-07-25 Union Carbide Corp Process for the preparation of alpha-per-fluoro-p-xylylene polymers
US3440277A (en) * 1965-12-13 1969-04-22 Us Air Force Fluoroaromatic compounds
US3342754A (en) * 1966-02-18 1967-09-19 Union Carbide Corp Para-xylylene polymers
US4291244A (en) * 1979-09-04 1981-09-22 Union Carbide Corporation Electrets
DE3240303C1 (de) * 1982-10-30 1984-01-19 Merck Patent Gmbh, 6100 Darmstadt Verfahren zur Herstellung von [2,2]-Paracyclophan
JPS5982720A (ja) * 1982-11-02 1984-05-12 Nec Corp 光気相成長法
JPS59135730A (ja) * 1983-01-24 1984-08-04 Hitachi Ltd 表面改質装置
US5714029A (en) * 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
JPS60231442A (ja) * 1984-04-28 1985-11-18 Toyota Central Res & Dev Lab Inc 撥水処理硝子の製造方法
US5178904A (en) * 1985-02-16 1993-01-12 Canon Kabushiki Kaisha Process for forming deposited film from a group II through group VI metal hydrocarbon compound
US4772486A (en) * 1985-02-18 1988-09-20 Canon Kabushiki Kaisha Process for forming a deposited film
US5139813A (en) * 1990-09-28 1992-08-18 Union Carbide Chemicals & Plastics Technology Corporation Method for inducing fluorescence in parylene films by an active plasma
US5230929A (en) * 1992-07-20 1993-07-27 Dow Corning Corporation Plasma-activated chemical vapor deposition of fluoridated cyclic siloxanes
US5210341A (en) * 1991-12-20 1993-05-11 Union Carbide Chemicals & Plastics Technology Corporation Processes for the preparation of octafluoro-[2,2]paracyclophane
US5324813A (en) * 1992-07-22 1994-06-28 International Business Machines Corporation Low dielectric constant fluorinated polymers and methods of fabrication thereof
US5424097A (en) * 1993-09-30 1995-06-13 Specialty Coating Systems, Inc. Continuous vapor deposition apparatus
JP3932206B2 (ja) * 1995-10-18 2007-06-20 スペシャルティ、コーティング、システムズ、インコーポレイテッド オクタフルオロ−〔2,2〕パラシクロファンの製造方法
US5536892A (en) * 1995-10-18 1996-07-16 Specialty Coating Systems, Inc. Processes for the preparation of octafluoro-[2,2]paracyclophane
EP0769788A3 (en) * 1995-10-20 1998-01-14 W.L. Gore & Associates, Inc. Low dielectric constant material for use as an insulation element in an electronic device
JP3808102B2 (ja) * 1995-10-27 2006-08-09 スペシャルティ、コーティング、システムズ、インコーポレイテッド 半導体ウエハ上へのパリレンaf4の蒸着方法
US5538758A (en) * 1995-10-27 1996-07-23 Specialty Coating Systems, Inc. Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers
US5534068A (en) * 1995-10-27 1996-07-09 Specialty Coating Systems, Inc. Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement
US5536321A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a post-pyrolysis filtering chamber and a deposition chamber inlet filter
US5536317A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a quartz crystal thickness/rate controller
US5536322A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a heated and cooled support platen and an electrostatic clamping device
TW297147B (en) * 1995-10-27 1997-02-01 Specialty Coating Systems Inc Multi-level circuit structure including fluorinated parylene polymer dielectric interlayers
US5556473A (en) * 1995-10-27 1996-09-17 Specialty Coating Systems, Inc. Parylene deposition apparatus including dry vacuum pump system and downstream cold trap
US5958510A (en) * 1996-01-08 1999-09-28 Applied Materials, Inc. Method and apparatus for forming a thin polymer layer on an integrated circuit structure
US6284933B1 (en) * 1996-10-23 2001-09-04 William R. Dolbier, Jr. TFPX synthesis
US5783614A (en) * 1997-02-21 1998-07-21 Copytele, Inc. Polymeric-coated dielectric particles and formulation and method for preparing same
US5841005A (en) * 1997-03-14 1998-11-24 Dolbier, Jr.; William R. Parylene AF4 synthesis

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268202A (en) * 1992-10-09 1993-12-07 Rensselaer Polytechnic Institute Vapor deposition of parylene-F using 1,4-bis (trifluoromethyl) benzene
US5536319A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including an atmospheric shroud and inert gas source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102052075B1 (ko) * 2013-03-28 2020-01-09 삼성디스플레이 주식회사 증착 장치, 이를 이용한 박막 형성 방법, 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법

Also Published As

Publication number Publication date
WO1999022043A1 (en) 1999-05-06
KR20010031400A (ko) 2001-04-16
JP2001521293A (ja) 2001-11-06
AU1188899A (en) 1999-05-17
JP4425461B2 (ja) 2010-03-03
US6086679A (en) 2000-07-11

Similar Documents

Publication Publication Date Title
JP4425461B2 (ja) 蒸着装置
KR100602222B1 (ko) 개선된 열안정성을 갖는 저유전상수 재료를 제조하기 위한전구체
US6140456A (en) Chemicals and processes for making fluorinated poly(para-xylylenes)
KR100573708B1 (ko) 광자 또는 플라즈마 보조 cvd로부터 제조되는 저유전상수 재료
US8389376B2 (en) Air gap integration scheme
US6818570B2 (en) Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strength
US20070299239A1 (en) Curing Dielectric Films Under A Reducing Atmosphere
US20030198578A1 (en) Multi-stage-heating thermal reactor for transport polymerization
US20030051662A1 (en) Thermal reactor for transport polymerization of low epsilon thin film
US6323297B1 (en) Low dielectric constant materials with improved thermal and mechanical properties
US7192645B2 (en) Porous low E (&lt;2.0) thin films by transport co-polymerization
KR100962044B1 (ko) 저유전 플라즈마 중합체 박막 및 그 제조 방법
US7094661B2 (en) Single and dual damascene techniques utilizing composite polymer dielectric film
US20030188683A1 (en) UV reactor for transport polymerization
US20040055539A1 (en) Reactive-reactor for generation of gaseous intermediates
KR100987183B1 (ko) 저유전 플라즈마 중합체 박막 및 그 제조 방법
US7718544B2 (en) Method of forming silicon-containing insulation film having low dielectric constant and low diffusion coefficient
JP3781730B2 (ja) 低誘電率及び高機械的強度を有するシリコン系絶縁膜の形成方法
Zhu Synthesis of low dielectric constant films

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20000424

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20031015

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20051114

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20060605

N234 Change of applicant [patent]: notification of change of applicant and registration of full transfer of right
PN2301 Change of applicant

Patent event date: 20060811

Comment text: Notification of Change of Applicant and Registration of Full Transfer of Right

Patent event code: PN23012R02D

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20060830

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20060831

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20090820

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20100813

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20110811

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20120808

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20120808

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20130821

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20130821

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20140807

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20140807

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20150807

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20150807

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20160811

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20160811

Start annual number: 11

End annual number: 11

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20190415

Termination category: Expiration of duration