KR100609767B1 - 염료 함유 포토레지스트, 이를 제조하는 방법 및 이를 포함하는 제품 - Google Patents

염료 함유 포토레지스트, 이를 제조하는 방법 및 이를 포함하는 제품 Download PDF

Info

Publication number
KR100609767B1
KR100609767B1 KR1019990000928A KR19990000928A KR100609767B1 KR 100609767 B1 KR100609767 B1 KR 100609767B1 KR 1019990000928 A KR1019990000928 A KR 1019990000928A KR 19990000928 A KR19990000928 A KR 19990000928A KR 100609767 B1 KR100609767 B1 KR 100609767B1
Authority
KR
South Korea
Prior art keywords
photoresist
dye
compound
anthracene
compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019990000928A
Other languages
English (en)
Korean (ko)
Other versions
KR19990067912A (ko
Inventor
신타로저에프
지도브스키토마스엠.
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 filed Critical 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
Publication of KR19990067912A publication Critical patent/KR19990067912A/ko
Application granted granted Critical
Publication of KR100609767B1 publication Critical patent/KR100609767B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/127—Spectral sensitizer containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019990000928A 1998-01-15 1999-01-15 염료 함유 포토레지스트, 이를 제조하는 방법 및 이를 포함하는 제품 Expired - Lifetime KR100609767B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9/007,623 1998-01-15
US09/007,623 1998-01-15
US09/007,623 US5976770A (en) 1998-01-15 1998-01-15 Dyed photoresists and methods and articles of manufacture comprising same

Publications (2)

Publication Number Publication Date
KR19990067912A KR19990067912A (ko) 1999-08-25
KR100609767B1 true KR100609767B1 (ko) 2006-08-10

Family

ID=21727240

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990000928A Expired - Lifetime KR100609767B1 (ko) 1998-01-15 1999-01-15 염료 함유 포토레지스트, 이를 제조하는 방법 및 이를 포함하는 제품

Country Status (5)

Country Link
US (2) US5976770A (enExample)
EP (1) EP0930543B1 (enExample)
JP (1) JP4551510B2 (enExample)
KR (1) KR100609767B1 (enExample)
DE (1) DE69837984T2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976770A (en) * 1998-01-15 1999-11-02 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
US7736833B2 (en) * 1999-02-23 2010-06-15 International Business Machines Corporation Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof
KR100324644B1 (ko) * 1999-10-26 2002-02-27 박호군 α-아미노안트라센 유도체 및 그의 공중합체와, 이를 이용한 형광 화상 형성 방법
JP3918542B2 (ja) * 2001-12-11 2007-05-23 住友化学株式会社 化学増幅型ポジ型レジスト組成物
EP1343048A3 (en) * 2002-03-08 2004-01-14 JSR Corporation Anthracene derivative and radiation-sensitive resin composition
US7067227B2 (en) * 2002-05-23 2006-06-27 Applied Materials, Inc. Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
US7344992B2 (en) * 2003-12-31 2008-03-18 Dongbu Electronics Co., Ltd. Method for forming via hole and trench for dual damascene interconnection
US7776504B2 (en) * 2004-02-23 2010-08-17 Nissan Chemical Industries, Ltd. Dye-containing resist composition and color filter using same
US7566527B2 (en) * 2007-06-27 2009-07-28 International Business Machines Corporation Fused aromatic structures and methods for photolithographic applications
JP5286236B2 (ja) * 2009-11-30 2013-09-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いて形成した膜及びそれを用いたパターン形成方法
US8871423B2 (en) * 2010-01-29 2014-10-28 Samsung Electronics Co., Ltd. Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same
US9547238B2 (en) 2012-10-16 2017-01-17 Eugen Pavel Photoresist with rare-earth sensitizers
DE112015000546T5 (de) * 2014-02-25 2016-11-10 Tokyo Electron Limited Chemische Verstärkungsverfahren und -methoden für entwickelbare untere Antireflexbeläge und gefärbte Implantationsresists
KR102072426B1 (ko) * 2015-09-30 2020-02-03 후지필름 가부시키가이샤 패턴 형성 방법, 및 감활성광선성 또는 감방사선성 수지 조성물
GB201517273D0 (en) * 2015-09-30 2015-11-11 Univ Manchester Resist composition
WO2025099025A1 (en) * 2023-11-09 2025-05-15 Merck Patent Gmbh Resist composition and method for producing resist film using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0726500A1 (en) * 1995-02-13 1996-08-14 Japan Synthetic Rubber Co., Ltd. Chemically amplified, radiation-sensitive resin composition

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
EP0388343B1 (en) * 1989-03-14 1996-07-17 International Business Machines Corporation Chemically amplified photoresist
US5059512A (en) * 1989-10-10 1991-10-22 International Business Machines Corporation Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions
US5055439A (en) * 1989-12-27 1991-10-08 International Business Machines Corporation Photoacid generating composition and sensitizer therefor
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5322765A (en) * 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
US5296332A (en) * 1991-11-22 1994-03-22 International Business Machines Corporation Crosslinkable aqueous developable photoresist compositions and method for use thereof
US5498748A (en) * 1993-07-20 1996-03-12 Wako Pure Chemical Industries, Ltd. Anthracene derivatives
US5576359A (en) * 1993-07-20 1996-11-19 Wako Pure Chemical Industries, Ltd. Deep ultraviolet absorbent composition
JP2847479B2 (ja) * 1994-03-28 1999-01-20 和光純薬工業株式会社 遠紫外線用レジスト組成物及びこれを用いた微細パターン形成方法
DE69511141T2 (de) * 1994-03-28 2000-04-20 Matsushita Electric Industrial Co., Ltd. Resistzusammensetzung für tiefe Ultraviolettbelichtung
US5705116A (en) * 1994-06-27 1998-01-06 Sitzmann; Eugene Valentine Increasing the useful range of cationic photoinitiators in stereolithography
TW439016B (en) * 1996-09-20 2001-06-07 Sumitomo Chemical Co Positive resist composition
AT404069B (de) 1996-10-04 1998-08-25 Vaillant Gmbh Brauchwasserheizer
US7147983B1 (en) * 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
US5976770A (en) * 1998-01-15 1999-11-02 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0726500A1 (en) * 1995-02-13 1996-08-14 Japan Synthetic Rubber Co., Ltd. Chemically amplified, radiation-sensitive resin composition

Also Published As

Publication number Publication date
EP0930543A1 (en) 1999-07-21
US5976770A (en) 1999-11-02
KR19990067912A (ko) 1999-08-25
US6706461B1 (en) 2004-03-16
DE69837984D1 (de) 2007-08-09
JP4551510B2 (ja) 2010-09-29
DE69837984T2 (de) 2008-03-06
EP0930543B1 (en) 2007-06-27
JPH11265061A (ja) 1999-09-28

Similar Documents

Publication Publication Date Title
KR100609767B1 (ko) 염료 함유 포토레지스트, 이를 제조하는 방법 및 이를 포함하는 제품
JP4250182B2 (ja) 染色されたフォトレジストとその方法及びそれからなる工業製品
KR100568887B1 (ko) 포토레지스트 조성물, 이를 사용하는 포토레지스트 릴리프 상의 제조방법 및 포토레지스트로 피복된 제품
KR100537381B1 (ko) 광산 발생제를 포함하는 반사 방지 조성물, 당해 조성물과 감광성 내식막이 피복된 기판 및 감광성 내식막 릴리프 화상의 형성방법
US5879856A (en) Chemically amplified positive photoresists
JP4297408B2 (ja) 厚膜フォトレジストとこれらの使用方法
JP3317597B2 (ja) ポジ型感光性組成物
CN100476583C (zh) 环状锍和氧化锍及含有它们的光致酸生成剂和光刻胶
KR20020011093A (ko) 반사방지 코팅 조성물
KR19990067913A (ko) 고정합성의 반사 방지성 코팅 조성물
JPH07306532A (ja) ポジ型感放射線性樹脂組成物
JPH08253534A (ja) 橋かけポリマー
JPH08225617A (ja) ポリマー
JPH11242326A (ja) 新規な色素を含む放射感受性組成物
JPH06266109A (ja) ポジ型感光性組成物
JP4991074B2 (ja) 光反応性酸発生剤およびそれを含有してなるフォトレジスト
JP2002055457A (ja) 高エネルギー放射線でのイメージング用フォトレジスト
KR20000076692A (ko) 신규한 중합체 및 이를 함유하는 포토레지스트 조성물
JP3503851B2 (ja) ポジ型感光性組成物
JPH10268519A (ja) 新規なポリマー及びそれを含有するフォトレジスト組成物
JP4198765B2 (ja) 不活性閉塞基を有する重合体を含む感照射線性組成物
JPH05155942A (ja) ナフトキノン−２−ジアジド−４−スルホニル基を含有する感放射線重合体およびポジ型記録材料における用途
JP3700164B2 (ja) 感放射線性組成物
JPH02275453A (ja) フオトレジスト組成物
JPH08227155A (ja) ポリマー

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19990115

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20040114

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19990115

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20051122

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20060711

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20060731

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20060801

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20090727

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20100709

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20110620

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20120628

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20130701

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20130701

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20140701

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20140701

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20150619

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20150619

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20160630

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20160630

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20170704

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20170704

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20180628

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20180628

Start annual number: 13

End annual number: 13

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20190715

Termination category: Expiration of duration