JP4551510B2 - 色素含有感光性耐食膜および方法ならびにこれを含む工業製品 - Google Patents

色素含有感光性耐食膜および方法ならびにこれを含む工業製品 Download PDF

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Publication number
JP4551510B2
JP4551510B2 JP00983899A JP983899A JP4551510B2 JP 4551510 B2 JP4551510 B2 JP 4551510B2 JP 00983899 A JP00983899 A JP 00983899A JP 983899 A JP983899 A JP 983899A JP 4551510 B2 JP4551510 B2 JP 4551510B2
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JP
Japan
Prior art keywords
resistant film
corrosion
photosensitive
anthracene
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP00983899A
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English (en)
Japanese (ja)
Other versions
JPH11265061A5 (enExample
JPH11265061A (ja
Inventor
エフ． シンタ ロジャー
エム．ジドウスキー トーマス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
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Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC, DuPont Electronic Materials International LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JPH11265061A publication Critical patent/JPH11265061A/ja
Publication of JPH11265061A5 publication Critical patent/JPH11265061A5/ja
Application granted granted Critical
Publication of JP4551510B2 publication Critical patent/JP4551510B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/127—Spectral sensitizer containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP00983899A 1998-01-15 1999-01-18 色素含有感光性耐食膜および方法ならびにこれを含む工業製品 Expired - Fee Related JP4551510B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/007623 1998-01-15
US09/007,623 US5976770A (en) 1998-01-15 1998-01-15 Dyed photoresists and methods and articles of manufacture comprising same

Publications (3)

Publication Number Publication Date
JPH11265061A JPH11265061A (ja) 1999-09-28
JPH11265061A5 JPH11265061A5 (enExample) 2006-03-02
JP4551510B2 true JP4551510B2 (ja) 2010-09-29

Family

ID=21727240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP00983899A Expired - Fee Related JP4551510B2 (ja) 1998-01-15 1999-01-18 色素含有感光性耐食膜および方法ならびにこれを含む工業製品

Country Status (5)

Country Link
US (2) US5976770A (enExample)
EP (1) EP0930543B1 (enExample)
JP (1) JP4551510B2 (enExample)
KR (1) KR100609767B1 (enExample)
DE (1) DE69837984T2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976770A (en) * 1998-01-15 1999-11-02 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
US7736833B2 (en) * 1999-02-23 2010-06-15 International Business Machines Corporation Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof
KR100324644B1 (ko) * 1999-10-26 2002-02-27 박호군 α-아미노안트라센 유도체 및 그의 공중합체와, 이를 이용한 형광 화상 형성 방법
JP3918542B2 (ja) * 2001-12-11 2007-05-23 住友化学株式会社 化学増幅型ポジ型レジスト組成物
EP1343048A3 (en) * 2002-03-08 2004-01-14 JSR Corporation Anthracene derivative and radiation-sensitive resin composition
US7067227B2 (en) * 2002-05-23 2006-06-27 Applied Materials, Inc. Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
US7344992B2 (en) * 2003-12-31 2008-03-18 Dongbu Electronics Co., Ltd. Method for forming via hole and trench for dual damascene interconnection
US7776504B2 (en) * 2004-02-23 2010-08-17 Nissan Chemical Industries, Ltd. Dye-containing resist composition and color filter using same
US7566527B2 (en) * 2007-06-27 2009-07-28 International Business Machines Corporation Fused aromatic structures and methods for photolithographic applications
JP5286236B2 (ja) * 2009-11-30 2013-09-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いて形成した膜及びそれを用いたパターン形成方法
US8871423B2 (en) * 2010-01-29 2014-10-28 Samsung Electronics Co., Ltd. Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same
WO2013119134A1 (en) 2012-10-16 2013-08-15 Eugen Pavel Photoresist with rare-earth sensitizers
DE112015000546T5 (de) * 2014-02-25 2016-11-10 Tokyo Electron Limited Chemische Verstärkungsverfahren und -methoden für entwickelbare untere Antireflexbeläge und gefärbte Implantationsresists
GB201517273D0 (en) * 2015-09-30 2015-11-11 Univ Manchester Resist composition
WO2017057226A1 (ja) * 2015-09-30 2017-04-06 富士フイルム株式会社 パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物
WO2025099025A1 (en) * 2023-11-09 2025-05-15 Merck Patent Gmbh Resist composition and method for producing resist film using the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
DE69027799T2 (de) * 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
US5059512A (en) * 1989-10-10 1991-10-22 International Business Machines Corporation Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions
US5055439A (en) * 1989-12-27 1991-10-08 International Business Machines Corporation Photoacid generating composition and sensitizer therefor
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5296332A (en) * 1991-11-22 1994-03-22 International Business Machines Corporation Crosslinkable aqueous developable photoresist compositions and method for use thereof
US5322765A (en) * 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
US5498748A (en) * 1993-07-20 1996-03-12 Wako Pure Chemical Industries, Ltd. Anthracene derivatives
US5576359A (en) * 1993-07-20 1996-11-19 Wako Pure Chemical Industries, Ltd. Deep ultraviolet absorbent composition
EP0675410B1 (en) * 1994-03-28 1999-08-04 Wako Pure Chemical Industries Ltd Resist composition for deep ultraviolet light
JP2847479B2 (ja) * 1994-03-28 1999-01-20 和光純薬工業株式会社 遠紫外線用レジスト組成物及びこれを用いた微細パターン形成方法
US5705116A (en) * 1994-06-27 1998-01-06 Sitzmann; Eugene Valentine Increasing the useful range of cationic photoinitiators in stereolithography
JP3579946B2 (ja) * 1995-02-13 2004-10-20 Ｊｓｒ株式会社 化学増幅型感放射線性樹脂組成物
TW439016B (en) * 1996-09-20 2001-06-07 Sumitomo Chemical Co Positive resist composition
AT404069B (de) 1996-10-04 1998-08-25 Vaillant Gmbh Brauchwasserheizer
US7147983B1 (en) * 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
US5976770A (en) * 1998-01-15 1999-11-02 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same

Also Published As

Publication number Publication date
EP0930543B1 (en) 2007-06-27
EP0930543A1 (en) 1999-07-21
US6706461B1 (en) 2004-03-16
DE69837984D1 (de) 2007-08-09
KR19990067912A (ko) 1999-08-25
US5976770A (en) 1999-11-02
JPH11265061A (ja) 1999-09-28
DE69837984T2 (de) 2008-03-06
KR100609767B1 (ko) 2006-08-10

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