KR100608588B1 - 스테레오리소그라피용 액체 광경화 조성물 - Google Patents
스테레오리소그라피용 액체 광경화 조성물 Download PDFInfo
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- KR100608588B1 KR100608588B1 KR1020007011144A KR20007011144A KR100608588B1 KR 100608588 B1 KR100608588 B1 KR 100608588B1 KR 1020007011144 A KR1020007011144 A KR 1020007011144A KR 20007011144 A KR20007011144 A KR 20007011144A KR 100608588 B1 KR100608588 B1 KR 100608588B1
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- liquid
- epoxy
- resin composition
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- 239000007788 liquid Substances 0.000 title claims abstract description 86
- 239000000203 mixture Substances 0.000 title claims description 161
- 150000001875 compounds Chemical class 0.000 claims abstract description 46
- 239000011342 resin composition Substances 0.000 claims abstract description 28
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 21
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 21
- 239000000178 monomer Substances 0.000 claims abstract description 12
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 11
- 239000012949 free radical photoinitiator Substances 0.000 claims abstract description 9
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- -1 aromatic alcohols Chemical class 0.000 claims description 63
- 239000000047 product Substances 0.000 claims description 51
- 239000007787 solid Substances 0.000 claims description 42
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- 229920003986 novolac Polymers 0.000 claims description 33
- 125000002091 cationic group Chemical group 0.000 claims description 31
- 125000001931 aliphatic group Chemical group 0.000 claims description 26
- 150000001768 cations Chemical class 0.000 claims description 25
- 150000003254 radicals Chemical class 0.000 claims description 23
- 125000003118 aryl group Chemical group 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 239000011368 organic material Substances 0.000 claims description 21
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 20
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 19
- 239000003607 modifier Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 15
- 229960000834 vinyl ether Drugs 0.000 claims description 15
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 14
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- 229930003836 cresol Natural products 0.000 claims description 14
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- 238000010538 cationic polymerization reaction Methods 0.000 claims description 8
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 claims description 7
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- 230000005855 radiation Effects 0.000 claims description 7
- 238000010526 radical polymerization reaction Methods 0.000 claims description 6
- VZTQQYMRXDUHDO-UHFFFAOYSA-N [2-hydroxy-3-[4-[2-[4-(2-hydroxy-3-prop-2-enoyloxypropoxy)phenyl]propan-2-yl]phenoxy]propyl] prop-2-enoate Chemical compound C=1C=C(OCC(O)COC(=O)C=C)C=CC=1C(C)(C)C1=CC=C(OCC(O)COC(=O)C=C)C=C1 VZTQQYMRXDUHDO-UHFFFAOYSA-N 0.000 claims description 5
- 125000000524 functional group Chemical group 0.000 claims description 5
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 claims description 4
- 125000003161 (C1-C6) alkylene group Chemical group 0.000 claims description 3
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical group C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 claims description 3
- 150000001491 aromatic compounds Chemical class 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000011417 postcuring Methods 0.000 claims description 2
- 125000004356 hydroxy functional group Chemical group O* 0.000 claims 4
- HNRMPXKDFBEGFZ-UHFFFAOYSA-N ethyl trimethyl methane Natural products CCC(C)(C)C HNRMPXKDFBEGFZ-UHFFFAOYSA-N 0.000 claims 2
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- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 16
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 16
- 239000003822 epoxy resin Substances 0.000 description 14
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 13
- 229920003319 Araldite® Polymers 0.000 description 12
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- 150000001450 anions Chemical class 0.000 description 12
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 12
- 239000012952 cationic photoinitiator Substances 0.000 description 12
- 239000000945 filler Substances 0.000 description 12
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- 125000000217 alkyl group Chemical group 0.000 description 11
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 8
- 125000003545 alkoxy group Chemical group 0.000 description 7
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- 150000003077 polyols Chemical class 0.000 description 7
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000000539 dimer Substances 0.000 description 6
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- CDBAMNGURPMUTG-UHFFFAOYSA-N 4-[2-(4-hydroxycyclohexyl)propan-2-yl]cyclohexan-1-ol Chemical compound C1CC(O)CCC1C(C)(C)C1CCC(O)CC1 CDBAMNGURPMUTG-UHFFFAOYSA-N 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical class OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 5
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 5
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 4
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 4
- 229910017008 AsF 6 Inorganic materials 0.000 description 4
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- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 125000002947 alkylene group Chemical group 0.000 description 4
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- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 4
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- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 2
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
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- B33Y10/00—Processes of additive manufacturing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
- B33Y70/10—Composites of different types of material, e.g. mixtures of ceramics and polymers or mixtures of metals and biomaterials
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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Abstract
Description
Claims (40)
- 하기의 물질을 포함하는 액체 수지 조성물:a) 55 내지 90중량%의 하나 이상의 고체 또는 액체 화학선 광경화 및 양이온 중합성 유기 물질; 여기서, 성분(a)는a1) 90 내지 700g/당량의 에폭시 당량을 갖는 3개 이상의 에폭시기를 갖는 폴리히드릭 지방족, 지환족 또는 방향족 알코올의 하나 이상의 글리시딜에테르, 및a2) 단량체 순도가 80중량% 이상인 2개 이상의 에폭시기를 갖는 80 내지 330의 에폭시 당량을 갖는 하나 이상의 고체 또는 액체 지환족 에폭시드 또는 그의 혼합물을 포함하고,b) 0.05 내지 12중량%의 양이온 중합용 화학선 감광성 개시제;c) 4 내지 30중량%의 화학선 광경화 및 라디칼 중합성 유기 물질;d) 0.02 내지 10중량%의 라디칼 중합용 화학선 감광성 개시제; 및e) 0.5 내지 40중량%의 하나 이상의 고체 또는 액체 양이온 반응 개질제-가요제;이때, 성분(a) 내지 성분(e)의 총량은 100중량%임.
- 제 1항에 있어서, 성분(a)를 20 내지 75중량% 포함하는 조성물.
- 제 1항 또는 제 2항에 있어서, 성분(a)가 분자 내에 2개 이상의 양이온 반응기를 갖는 하나 이상의 액체 또는 고체 비닐에테르 화합물 20중량% 이하 또는 히드록시 관능성 모노(폴리)비닐에테르 또는 그의 혼합물을 더 포함하는 조성물.
- 제 1항 또는 제 2항에 있어서, 성분(a)가 분자내에 2개 이상의 양이온 반응기를 갖는 하나 이상의 액체 또는 고체 에폭시 크레졸 노볼락 또는 에폭시 페놀 노볼락, 옥세탄 또는 스피로-오르토 에스테르 화합물 또는 그의 혼합물을 더 포함하는 조성물.
- 제 1항 또는 제 2항에 있어서, 성분 a1)이 성분 a2)의 3 내지 90중량%인 조성물.
- 삭제
- 하기의 물질을 포함하는 액체 수지 조성물:a) 55-90중량%의 하나 이상의 고체 또는 액체 화학선 광경화 및 양이온 중합성 유기 물질; 여기서, 성분(a)는a1) 90 내지 700g/당량의 에폭시 당량을 갖는 3개 이상의 에폭시기를 갖는 폴리히드릭 지방족, 지환족 또는 방향족 알코올의 하나 이상의 글리시딜에테르, 및a3) 2개 이상의 관능기를 갖는 130 내지 350의 에폭시 당량을 갖는 하나 이상의 고체 또는 액체 에폭시 크레졸 노볼락 또는 에폭시 페놀 노볼락 또는 그의 혼합물을 포함하고,b) 0.05 내지 12중량%의 양이온 중합용 화학선 감광성 개시제;c) 4 내지 30중량%의 화학선 광경화 및 라디칼 중합성 유기 물질;d) 0.02 내지 10중량%의 라디칼 중합용 화학선 감광성 개시제; 및e) 0.5 내지 40중량%의 하나 이상의 고체 또는 액체 양이온 반응 개질제-가요제;이때, 성분(a) 내지 성분(e)의 총량은 100중량%임.
- 제 7항에 있어서, 성분(a)가 성분 a3)을 2 내지 50중량% 포함하는 조성물.
- 제 7항 또는 제 8항에 있어서, 성분(a)가 분자내에 2개 이상의 양이온 반응기를 갖는 하나 이상의 액체 또는 고체 비닐에테르 화합물의 20중량% 이하 또는 히드록시 관능성 모노(폴리)비닐에테르 또는 그의 혼합물을 더 포함하는 조성물.
- 제 7항 또는 제 8항에 있어서, 성분(a)가 분자 내에 2개 이상의 양이온 반응기를 갖는 하나 이상의 액체 또는 고체 지환족 다관능성 에폭시드, 옥세탄 또는 스피로-오르토 에스테르 화합물 또는 그의 혼합물을 더 포함하는 조성물.
- 제 7항 또는 제 8항에 있어서, 성분 a1)이 성분 a3)의 3 내지 90중량%인 조성물.
- 삭제
- 제 7항 또는 제 8항에 있어서, 성분 a3)이 4 이상의 에폭시 관능성을 갖는 조성물.
- 삭제
- 제 1항에 있어서, 하나 이상의 고체 또는 액체 양이온 반응 개질제가 반응성 에폭시 개질제 또는 반응성 비닐에테르 개질제 또는 그의 혼합물인 조성물.
- 제 1항에 있어서, 반응성 개질제-가요제가 100 내지 2000의 분자량을 갖는 양이온 반응기와 결합된 사슬 연장 절편을 함유하는 하나 이상의 양이온 반응 이관능성 지방족, 지환족 또는 방향족 화합물을 포함하는 조성물.
- 삭제
- 삭제
- 삭제
- 제 1항 또는 제 7항에 있어서, 4중량% 이상의 모노- 또는 디(메타)크릴레이트 및 3개 이상의 (메타)크릴레이트 관능성을 갖는 4중량% 이상의 폴리(메타)크릴레이트를 포함하는 7 내지 30중량%의 자유 라디칼 경화 성분을 함유하는 조성물.
- 제 1항 또는 제 7항에 따른 조성물을 화학선으로 처리시키는 것을 포함하는, 경화 제품의 제조 방법.
- 삭제
- 삭제
- 삭제
- 하기의 물질을 포함하는 액체 수지 조성물:a) 단량체 순도가 94% 이상인, 분자당 2개 이상의 에폭시기를 갖는 지환족 폴리에폭시드를 포함하는 1 이상의 양이온성 경화성 화합물 55 내지 90 중량%;b) 양이온 경화 화합물용의 1 이상의 광개시제 0.05 내지 12중량%;c) 자유 라디칼 경화성 성분 4 내지 30중량%;d) 자유 라디칼 광개시제 0.02 내지 10중량%; 및e) 하나 이상의 고체 또는 액체 양이온 반응 개질제-가요제 0.5 내지 40중량%;이때, 성분(a) 내지 성분(e)의 총량은 100중량%임.
- 제 25항에 있어서, 지환족 폴리에폭시드가 3,4-에폭시시클로헥실메틸 3',4'-에폭시시클로헥산카르복실레이트인 액체 수지 조성물.
- 제 25항 또는 제 26항에 있어서, 지환족 폴리에폭시드가 Uvacure 1500 또는 Celoxide 2021P인 액체 수지 조성물.
- 제 25항 또는 제 26항에 있어서, 자유 라디칼 경화성 성분 c)가 트리(메트)아크릴레이트 또는 펜타(메트)아크릴레이트인 액체 수지 조성물.
- 제 28항에 있어서, 트리(메트)아크릴레이트가 트리메틸프로판 트리(메트)아크릴레이트인 액체 수지 조성물.
- 제 29항에 있어서, 트리(메트)아크릴레이트 자유 라디칼 경화성 성분이 히드록시-함유 트리(메트)아크릴레이트인 액체 수지 조성물.
- 제 30항에 있어서, 히드록시-함유 트리(메트)아크릴레이트가 SR351, Aronix M309 또는 Viscoat-295인 액체 수지 조성물.
- 제 32항에 있어서, YF가 C1-6 알킬렌인 액체 수지 조성물.
- 제 32항에 있어서, 성분 c)가 비스페놀 A 디글리시딜에테르 디아크릴레이트인 액체 수지 조성물.
- 제 32항에 있어서, 성분 c)가 Ebecryl 3700, Ripoxy SP-1509 또는 Ripoxy VR77인 액체 수지 조성물.
- 제 25항에 있어서, 성분 a)는 분자당 3개 이상의 에폭시 기를 갖는 1 이상의 다관능성 지방족, 지환족 또는 방향족 글리시딜에테르를 부가적으로 포함하는 액체 수지 조성물.
- 제 25항에 있어서, 자유 라디칼 경화성 성분 c)가 폴리(메트)아크릴레이트인 액체 수지 조성물.
- 제 25항에 있어서, 성분 a)는a1) 90 내지 700g/당량의 에폭시 당량을 갖는 3개 이상의 에폭시기를 갖는 폴리히드릭 지방족, 지환족 또는 방향족 알코올의 하나 이상의 글리시딜에테르, 및a2) 단량체 순도가 94% 이상인 2개 이상의 에폭시기를 갖는 80 내지 330의 에폭시 당량을 갖는 하나 이상의 고체 또는 액체 지환족 에폭시드, 또는 그의 혼합물을 포함하는 액체 수지 조성물.
- 제 25항에 따른 조성물을 화학선에 처리시키는 것을 포함하는 경화 제품의 제조 방법.
- 하기의 단계를 포함하는 3차원 형태를 갖는 제품을 제조하는 방법:a) 제 1항, 제 7항 또는 제 25항 중 어느 한 항에 따른 액체 수지 조성물을 화학선으로 처리하여 원하는 단면적을 갖는 3차원 제품이 형성되도록 표면 영역 내의 상기 조성물의 표면상에 적어도 부분적으로 경화 층을 형성하는 단계;b) 단계 a)에서 제조된 적어도 부분적으로 경화된 층을 상기 액체 수지 조성물의 새로운 층으로 덮는 단계;c) 목적하는 형태를 갖는 제품이 형성될 때까지 단계 a) 및 b)를 반복하는 단계; 및d) 얻어진 제품을 충분한 시간 동안 승온 상태에서 후경화하여 110℃를 초과하는 열 편차 온도를 갖는 최종 제품을 수득하는 단계.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US09/055,832 US6100007A (en) | 1998-04-06 | 1998-04-06 | Liquid radiation-curable composition especially for producing cured articles by stereolithography having high heat deflection temperatures |
US9/055,832 | 1998-04-06 | ||
US09/055,832 | 1998-04-06 |
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KR20010042514A KR20010042514A (ko) | 2001-05-25 |
KR100608588B1 true KR100608588B1 (ko) | 2006-08-03 |
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KR1020007011144A KR100608588B1 (ko) | 1998-04-06 | 1999-03-25 | 스테레오리소그라피용 액체 광경화 조성물 |
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US (3) | US6100007A (ko) |
EP (2) | EP1086403B1 (ko) |
JP (1) | JP4798846B2 (ko) |
KR (1) | KR100608588B1 (ko) |
CN (2) | CN1690855B (ko) |
AT (1) | ATE242890T1 (ko) |
AU (1) | AU748042B2 (ko) |
BR (1) | BR9909404A (ko) |
CA (1) | CA2325716C (ko) |
DE (1) | DE69908775T2 (ko) |
IL (1) | IL138449A0 (ko) |
MY (1) | MY133766A (ko) |
TR (1) | TR200002895T2 (ko) |
TW (1) | TW593525B (ko) |
WO (1) | WO1999052017A1 (ko) |
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-
1999
- 1999-03-19 MY MYPI99001025A patent/MY133766A/en unknown
- 1999-03-25 TR TR2000/02895T patent/TR200002895T2/xx unknown
- 1999-03-25 BR BR9909404-5A patent/BR9909404A/pt not_active IP Right Cessation
- 1999-03-25 EP EP99917859A patent/EP1086403B1/en not_active Expired - Lifetime
- 1999-03-25 WO PCT/EP1999/002033 patent/WO1999052017A1/en active IP Right Grant
- 1999-03-25 KR KR1020007011144A patent/KR100608588B1/ko not_active IP Right Cessation
- 1999-03-25 DE DE69908775T patent/DE69908775T2/de not_active Expired - Lifetime
- 1999-03-25 CA CA002325716A patent/CA2325716C/en not_active Expired - Lifetime
- 1999-03-25 CN CN2005100659999A patent/CN1690855B/zh not_active Expired - Lifetime
- 1999-03-25 EP EP03075568.0A patent/EP1327911B1/en not_active Revoked
- 1999-03-25 CN CNB99804847XA patent/CN1273868C/zh not_active Expired - Lifetime
- 1999-03-25 AT AT99917859T patent/ATE242890T1/de not_active IP Right Cessation
- 1999-03-25 AU AU35993/99A patent/AU748042B2/en not_active Ceased
- 1999-03-25 IL IL13844999A patent/IL138449A0/xx unknown
- 1999-03-25 JP JP2000542694A patent/JP4798846B2/ja not_active Expired - Lifetime
- 1999-04-03 TW TW088105355A patent/TW593525B/zh not_active IP Right Cessation
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2000
- 2000-06-22 US US09/602,172 patent/US6413696B1/en not_active Expired - Lifetime
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EP1327911B1 (en) | 2014-05-07 |
WO1999052017A1 (en) | 1999-10-14 |
JP4798846B2 (ja) | 2011-10-19 |
CN1296578A (zh) | 2001-05-23 |
TR200002895T2 (tr) | 2001-01-22 |
AU3599399A (en) | 1999-10-25 |
CN1690855B (zh) | 2010-06-16 |
DE69908775T2 (de) | 2004-04-22 |
JP2002510748A (ja) | 2002-04-09 |
DE69908775D1 (de) | 2003-07-17 |
US6413696B1 (en) | 2002-07-02 |
CN1690855A (zh) | 2005-11-02 |
US6100007A (en) | 2000-08-08 |
EP1086403B1 (en) | 2003-06-11 |
EP1086403A1 (en) | 2001-03-28 |
AU748042B2 (en) | 2002-05-30 |
IL138449A0 (en) | 2001-10-31 |
KR20010042514A (ko) | 2001-05-25 |
CA2325716A1 (en) | 1999-10-14 |
BR9909404A (pt) | 2000-12-19 |
CN1273868C (zh) | 2006-09-06 |
EP1327911A1 (en) | 2003-07-16 |
CA2325716C (en) | 2007-05-15 |
ATE242890T1 (de) | 2003-06-15 |
MY133766A (en) | 2007-11-30 |
TW593525B (en) | 2004-06-21 |
US20020160309A1 (en) | 2002-10-31 |
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