KR100605454B1 - Transcription material and manufacturing method thereof, and wiring board manufactured by using transcription material - Google Patents

Abstract

It is an object of the present invention to provide a transfer material which can reliably and easily transfer a fine wiring pattern to a substrate. A transfer material having at least three layers of a first metal layer 101 as a carrier, a second metal layer 103 to be transferred to a substrate as a wiring pattern, and a release layer 102 to detachably join the first and second metal layers. to be. The unevenness | corrugation corresponding to a wiring pattern is formed in the surface layer part of the 1st metal layer 101, and the peeling layer 102 and the 2nd metal layer 103 are formed in the convex part area | region.

Description

Transcription material and manufacturing method thereof and wiring board manufactured using the same

BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing which shows the structure outline of 1st Embodiment (1st transfer material) of the transfer pattern formation material (henceforth a transfer material) which concerns on this invention,

2 is a cross-sectional view showing a configuration outline of a second embodiment (second transfer material) of the transfer material according to the present invention;

3 is a cross-sectional view showing a configuration outline of a third embodiment (third transfer material) of the transfer material according to the present invention;

4 (a) to 4 (f) are cross-sectional views showing the outline of the manufacturing process of the first transfer material;

5 (a) to 5 (e) are cross-sectional views showing the outline of the manufacturing process of the second transfer material;

6 (a) to 6 (e) are cross-sectional views showing the outline of the manufacturing process of the third transfer material;

7 (a) to 7 (c) are cross-sectional views showing an outline of an example of the manufacturing process of the composite wiring board using the transfer material of the present invention;

8 is a cross-sectional view showing the outline of the construction of a ceramic wiring board manufactured using the transfer material of the present invention;

FIG. 9 is a cross-sectional view illustrating a configuration in which a semiconductor chip is flip-chip mounted on the ceramic wiring board of FIG. 8; FIG.

10 (a) to 10 (j) are cross-sectional views schematically showing an example of a manufacturing process of a multilayer wiring board using the transfer material of the present invention;

11 is a cross-sectional view showing a configuration schematic of an example of a multilayer wiring board manufactured using the transfer material of the present invention;

12 is a cross-sectional view showing a configuration schematic of another example of a multilayer wiring board produced using the transfer material of the present invention;

Fig. 13 is a sectional view showing the construction of still another example of a multilayer wiring board fabricated using the transfer material of the present invention;

Fig. 14 is a sectional view showing the construction of still another example of a multilayer wiring board fabricated using the transfer material of the present invention;

Fig. 15 is a sectional view showing the construction of still another example of a multilayer wiring board fabricated using the transfer material of the present invention;

16 (a) to 16 (c) are cross-sectional views showing an outline of an example of a manufacturing process of a multilayer wiring board using the transfer material of the present invention;

17 (a) to 17 (c) are cross-sectional views showing the outline of another example of the manufacturing process of the multilayer wiring board using the transfer material of the present invention;

18 (a) to 18 (e) are cross-sectional views schematically showing still another example of the manufacturing process of the multilayer wiring board using the transfer material of the present invention;

19 (a) and 19 (b) are cross-sectional views showing the outline of the configuration of the transfer part wiring pattern forming material (fourth transfer material) according to the fifth embodiment of the present invention;

20 is a cross-sectional view showing a configuration outline of a transfer part wiring pattern forming material (fifth transfer material) in a sixth embodiment of the present invention;

FIG. 21 is a cross-sectional view showing a configuration outline of a transfer part wiring pattern forming material (sixth transfer material) in a seventh embodiment of the present invention; FIG.

22 (a) to 22 (g ') are sectional views showing an outline of a manufacturing process of a multilayer circuit board using the fourth transfer material;

23 (a) to 23 (h) are cross-sectional views showing an outline of a manufacturing process of a circuit board using the fifth transfer material;

24 (a) to (h) are cross-sectional views showing an outline of a manufacturing process of a circuit board using the sixth transfer material;

25 is a cross-sectional view of a multilayer circuit board manufactured using the fourth to sixth transfer materials;

26 (a) to 26 (c) are cross-sectional views schematically showing a method for forming a single layer wiring board constituting each layer of the multilayer circuit board shown in FIG. 25 by using the sixth transfer material of the present invention;

26 (a ') to (c') are sectional views of each layer of the multilayer circuit board formed by the respective methods of (a) to (c);

Fig. 26 (d ') is a sectional view of a wiring board of the lowermost layer of the multilayer circuit board.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transfer material for transferring a fine wiring pattern to a substrate of a circuit component, and a method of manufacturing the same, and a wiring board on which a wiring pattern or a circuit component is formed using the transfer material, and a method of manufacturing the same.

In recent years, in accordance with the demand for high performance and miniaturization of electronic devices, higher density and higher functionality of semiconductors have been demanded. For this reason, the circuit board for mounting the semiconductor is also required to be smaller and higher density.

In response to these demands, for example, electrical wiring between large-scale integrated circuits (LSI) or mounting components can be connected in the shortest distance. Since the inner via hole (IVH) connection method, which is an electrical connection method between the substrate layers, enables the most dense wiring, development has been advanced in each aspect.

Generally, as the wiring board of the IVH configuration, for example, a multilayer ceramic wiring board, a multilayer printed wiring board by a build-up method, a multilayer composite wiring board made of a mixture of a resin and an inorganic filler, and the like.

The multilayer ceramic wiring board can be produced, for example, as shown below. First, several sheets of green sheets made of ceramic powder such as alumina, an organic binder and a plasticizer are prepared. A via hole is provided in the green sheet, and a conductive paste is filled in the via hole. Then, wiring pattern printing is performed on this green sheet, and each said green sheet is laminated | stacked. The multilayer ceramic wiring board can be produced by debindering and firing the laminate. Since the multilayer ceramic wiring board has an IVH structure, a very high density wiring pattern can be formed, which is optimal for miniaturization of electronic devices.

Moreover, the printed wiring board by the said buildup method which mimics the structure of this multilayer ceramic wiring board is also developed in each area. For example, Japanese Patent Laid-Open No. 9-116267, Japanese Patent Laid-Open No. 9-51168, and the like disclose a conventional general build-up method. In this method, after using a glass-epoxy substrate conventionally used as a core, forming a photosensitive insulating layer on the surface of the substrate, a via hole is formed by photolithography and a copper plating layer is formed on the entire surface. A method of chemically etching copper plating to form a wiring pattern is disclosed.

In addition, Japanese Patent Laid-Open No. 9-326562 discloses a method of filling a conductive hole in a via hole processed by the photolithography method similarly to the build-up method. In Japanese Patent Laid-Open Nos. 9-36551 and 10-51139, a conductive circuit is formed on one surface of an insulating hard substrate, and an adhesive layer is formed on the other surface, and through holes are provided in the conductive paste. After filling, a multi-layered method of laminating a plurality of substrates is disclosed.

Further, Patent Nos. 2601128, Patents 263053, and Patent 2587596 provide a through hole in an aramid-epoxy prepreg by laser processing, and after filling a conductive paste therein, laminating copper foil. It is a method of carrying out patterning, and using this board | substrate as a core, and multi-layering by reinserting in the prepreg which filled the electrically conductive paste.                         

As described above, for example, when the resin-based printed wiring board is IVH-connected, similarly to the multilayer ceramic wiring board, electrical connection between only necessary layers is possible, and since there is no through hole in the uppermost layer of the wiring board, it is also excellent in mountability.

However, resin-based printed wiring boards having a high density package having such an IVH structure generally have low thermal conductivity and it is difficult to dissipate heat generated from the components as the mounting of the components becomes high.

In 2000, the clock frequency of the CPU is about 1 kHz, and the power consumption of the CPU is estimated to reach 100 to 150 W per chip as the function of the CPU is advanced.

In general, ceramic wiring boards excellent in thermal conductivity are excellent in heat dissipation, but there are problems such as relatively expensive ones, and defects in falling resistance when applied to substrates and modules used in portable terminals.

Accordingly, a structure in which a resin-based printed wiring board and a ceramic substrate are laminated for the purpose of supplementing the resin printed wiring board with a problem in thermal conductivity or for forming a capacitor in the multilayered resin substrate is disclosed in Patent No. 3063427. It is proposed in the publication or Unexamined-Japanese-Patent No. 7-142867.

Moreover, in order to improve the thermal conductivity of the base material itself, a multilayer composite wiring board is proposed in Japanese Patent Laid-Open Nos. 9-270584, 8-125291, 8-288596, and 10-173097. have. This multilayer composite wiring board is a board | substrate which mixed and mixed thermosetting resins, such as an epoxy resin, and an inorganic filler (for example, ceramic powder etc.) which is excellent in thermal conductivity, and compounded. Since this substrate can contain the said inorganic filler at high concentration, thermal conductivity can be improved. In addition, by selecting the kind of the inorganic filler, for example, the dielectric constant, thermal expansion coefficient and the like can be arbitrarily controlled.

On the other hand, in advancing high density mounting of a board | substrate, formation of a fine wiring pattern is important. In the multilayer ceramic wiring board, a method of forming a wiring pattern by, for example, screen printing a film-thick conductive paste onto a ceramic substrate and sintering by firing is generally used. However, in this screen printing method, it is known that mass production of wiring patterns having a line width of 100 µm or less is difficult.

Moreover, in the normal printed wiring board, the method of forming a wiring pattern by the subtractive method is common, for example. In this subtractive method, a wiring pattern is formed on a substrate by chemically etching a copper foil having a thickness of about 18 to 35 µm, and this method is also known to be difficult to mass produce a wiring pattern having a line width of 75 µm or less. In order to further refine the wiring pattern, it is necessary to thin the copper foil.

Moreover, according to the said subtractive method, since it becomes a structure which the wiring pattern was outstanding on the board | substrate surface, it is difficult to put solder, an electrically conductive adhesive, etc. for electrical connection on the bump formed in the semiconductor, and the said bump wiring pattern There is a fear that it may shorten due to movement in the liver. Moreover, for the protruding wiring pattern, there is a possibility that it may be an obstacle when sealing with a sealing resin in a later step, for example.

In addition, in the printed wiring board by the build-up method, for example, an additive method, in addition to the subtractive method, tends to be adopted. In this additive method, for example, a wiring pattern having a line width of about 30 μm can be formed on the substrate surface on which a resist is formed by selectively plating the wiring pattern. However, this method has a problem that the adhesion strength of the wiring pattern to the substrate is weak compared to the subtractive method described above.

Therefore, after forming a fine wiring pattern in advance and performing a pattern inspection, the method of transferring only the good wiring pattern to a desired board | substrate is proposed. For example, U.S. Patent No. 5,407,511 is a method of previously forming a fine pattern on the surface of a carbon plate by printing and firing, and transferring this to a ceramic substrate. Also, Japanese Patent Laid-Open Nos. 10-84186 and 10-41611 disclose a method of transferring a wiring pattern made of copper foil formed on a releasable support plate to a prepreg. Similarly, Japanese Patent Laid-Open No. 11-261219 discloses a method of transferring a wiring pattern made of copper foil on a weight-forming support plate made of copper foil through a nickel phosphorus alloy peeling layer. Moreover, Japanese Patent Laid-Open No. 8-330709 discloses a method of transferring to a substrate by using different degrees of adhesion between a rough screen and a glossy surface of a copper foil as a wiring pattern.

Since the wiring pattern transferred by such a transfer method is filled with the substrate surface, and the surface of the obtained wiring substrate has a flat structure, the problem caused by the protrusion of the wiring pattern can be avoided as described above. Further, Japanese Patent Laid-Open No. 10-190191 discloses an effect of compressing the conductive via paste filled in the through hole by the thickness of the wiring pattern when the wiring pattern is filled on the substrate surface.

In recent years, further miniaturization of wiring patterns has been required. In the conventional technique for transferring wiring patterns, it is difficult to form finer wiring patterns on the releasable support plate. That is, when patterning copper foil adhered to the said release property support plate, for example, if the adhesive strength with respect to the said release property support plate is weak, a fine wiring pattern will peel at the chemical etching time. On the contrary, when the said adhesive strength is strong, after transferring the said wiring pattern to a board | substrate, when peeling the said release property support plate, a wiring pattern will also peel together. Moreover, there is also a method of transferring copper foil to a substrate by roughening the surface of the copper foil and making the adhesive strength of the copper foil with the substrate higher than the adhesive strength with the releasable support plate. In this method, fine wiring patterns are formed. It is difficult.

Further, even if a method of forming a wiring pattern by sintering the conductive paste screen-printed with the ceramic substrate by firing, for example, is used, there is a limit in miniaturization of the wiring pattern, and the sintering of the conductive paste containing conductive powder is performed. Unlike the metal layer like copper foil, electrical conductivity deteriorates and there exists a possibility that it may become a problem about subsequent high frequency.

On the other hand, it was conventionally difficult to manufacture the ceramic multilayer board | substrate formed by wiring by metal foil, such as copper foil. This is because it was difficult to form wiring from the metal foil without damaging the properties and shape of the green sheet on the green sheet.

Moreover, when considering the manufacturing method of a resin-based printed wiring board, conventionally, the lamination | stacking method using sequential lamination | stacking is common, and the press process also takes many times. For this reason, in order to realize reliable interlayer connection, it was not possible to pass through complicated processes, such as correction of hardening shrinkage which arises in each press process.

Moreover, the structure itself which laminated | stacked the resin-based printed wiring board and the ceramic board | substrate for the purpose of complementing the resin printed wiring board which has a subject in heat conductivity, etc., or the purpose of forming a capacitor in a multilayered resin board is already proposed. . However, in reality, damages such as cracks mainly occur in the ceramic layer through the lamination process or the like, and it is difficult to produce resin-based and ceramic laminates.

MEANS TO SOLVE THE PROBLEM This invention is a transfer wiring pattern formation material for transferring a fine wiring pattern to a board | substrate, in order to solve the said conventional problem, The transfer wiring pattern formation which can carry out transfer to a board | substrate easily and reliably, and is low cost is formed. The purpose is to provide ash.

In addition, in order to advance high-density mounting of a board | substrate, not only refine | miniaturization of a wiring pattern but how to form and mount the circuit component connected to a wiring pattern becomes an important point. Conventionally, passive components such as inductors, capacitors, and resistors are generally mounted in a state of protruding from the substrate surface, and it is difficult to embed them in the substrate. For this reason, a limit occurred in high density mounting.

For example, in the conventional method disclosed in the above-mentioned publications, all of the patterns formed on the transfer forming material are only wiring portions of copper foil. In order to improve the mounting density, a method of mounting a passive component or the like on a transfer forming material in the form of a chip can also be proposed. When the passive component is embedded in a substrate, disconnection of the connection portion with the wiring pattern, positional shift of the chip, etc. Several problems are occurring.

Accordingly, the present invention is a transfer part wiring pattern forming material for embedding fine wiring patterns and circuit components into a circuit board, and is used to accurately and low-cost circuit components, while ensuring connection with wiring patterns. Another object is to provide a transfer component wiring pattern forming material which can be mounted.

Further, an object of the present invention is to provide a wiring board on which wiring patterns and circuit components are formed, using the above-mentioned transfer wiring pattern forming material or transfer component wiring pattern forming material (transfer material).

In order to achieve the said objective, the transfer material which concerns on the 1st structure of this invention is interposed between the 1st metal layer as a carrier, the 2nd metal layer as a wiring pattern, and the said 1st metal layer and a 2nd metal layer, and said 1st At least three layers of a peeling layer for joining the metal layer and the second metal layer in a peelable state, wherein a convex portion having a shape corresponding to the wiring pattern is formed in the first metal layer surface layer portion, and the peeling portion is formed on the convex portion region. A layer and the said 2nd metal layer are formed, It is characterized by the above-mentioned.

The transfer material according to the second configuration of the present invention has at least two layers of a first metal layer as a carrier and a second metal layer as a wiring pattern, and is connected to the printing method so as to be electrically connected to the second metal layer on the first metal layer. The circuit component formed by this is characterized by the above-mentioned.

According to the transfer material according to the second configuration, circuit components such as an inductor, a capacitor, and a resistor can be collectively formed by printing. In particular, the formation of a resistor is easy. The circuit components are not limited to these passive components, and active components such as semiconductor chips may be formed.                         

In addition, since the mounting of circuit components using solder or the like becomes unnecessary, the mounting process can be simplified. In addition, as the solder connection is reduced, the reliability of the wiring board can be improved. In addition, by forming a circuit component on the transfer material by printing, it is possible to realize a lowering of the circuit component as compared with the case of solder mounting the component chip. It can be done easily. In addition, the arrangement of the circuit components is free, and the high-frequency characteristics can be improved, for example, with the shortest wiring distance to the built-in capacitor or the like.

In addition, the transfer material according to the second configuration can reuse the first metal layer by forming a new second metal layer, a wiring pattern, or a component pattern on the first metal layer which is the peeled carrier after the transfer, and the structure of the wiring pattern can be reused. Also not particularly limited. For this reason, cost reduction can be attained and it is very useful also industrially.

In addition, in order to achieve the above object, the first manufacturing method of the transfer material of the present invention,

Forming a release layer on the first metal layer,

Forming a second metal layer on the release layer;

By etching the surface layer portions of the second metal layer, the peeling layer and the first metal layer by a chemical etching method, the second metal layer and the peeling layer are formed in a wiring pattern shape, and the convex portions are formed on the surface layer portion of the first metal layer. It is characterized in that an uneven portion having a shape corresponding to the wiring pattern is formed.

Moreover, the 2nd manufacturing method of the transfer material of this invention,

Forming a second metal layer in the shape of a wiring pattern on the first metal layer,                         

A circuit component is formed by printing so as to be electrically connected to the second metal layer.

The second metal layer serving as the wiring pattern may be directly formed on the first metal layer serving as the carrier using a plating method, a vapor deposition method, a sputtering method, or the like. At the time of forming the second metal layer, the thin film resistor may be similarly formed by the sputtering method or the like.

In addition, the third manufacturing method of the transfer material of the present invention,

Forming a release layer and a second metal layer on the second metal layer,

The second metal layer and the peeling layer are processed into a wiring pattern shape,

A circuit component is formed by printing so as to be electrically connected to the second metal layer.

In addition, the wiring board according to the first aspect of the present invention is an wiring board including an electrically insulating substrate and a wiring pattern formed on at least one circumferential surface of the electrically insulating substrate by a transfer method using the transfer material according to the first configuration. The wiring pattern may be formed in a recess formed on the main surface.

The wiring board according to the second aspect of the present invention is a multilayer wiring board having an inner via hole structure formed by stacking a plurality of wiring boards, wherein at least one layer is provided with the wiring board according to the first configuration.

In addition, the wiring board according to the third aspect of the present invention includes an electrically insulating substrate, wiring patterns and circuit components formed on at least one circumferential surface of the electrically insulating substrate by a transfer method using the transfer material according to the second configuration. And the circuit component is electrically connected to the wiring pattern, and the circuit component and the wiring pattern are embedded in the main surface.

A wiring board according to a fourth aspect of the present invention is a multilayer wiring board having an inner via hole structure formed by stacking a plurality of wiring boards, wherein at least one layer is provided with the wiring board according to the third configuration.

The first manufacturing method of the wiring board of the present invention is a manufacturing method of the wiring board using the transfer material according to the first configuration.

The side where the wiring pattern metal layer including the at least second metal layer in the transfer material is formed is pressed onto at least one peripheral surface of the sheet-like base material in an uncured state,

The said wiring pattern metal layer is transferred to the said sheet-like base material by peeling the said 1st metal layer joined by the said peeling layer to the said 2nd metal layer from the said 2nd metal layer.

The second manufacturing method of the wiring board of the present invention,

Through-holes are formed in the ceramic sheet,

On both sides of the ceramic sheet on which the through-holes are formed, a restraint sheet mainly composed of an inorganic composition which is not substantially sintered at the sintering temperature of the ceramic sheet is disposed,

Firing the ceramic sheet together with the restraint sheet,

After firing, the restraint sheet is removed,

The through hole is filled with a thermosetting conductive composition to obtain a ceramic substrate with a via conductor,

The side where the wiring pattern metal layer containing the at least 2nd metal layer in the transfer material which concerns on said 1st structure was formed was crimped | bonded to at least one peripheral surface of the sheet-like base material of the uncured state containing a thermosetting resin composition,

The wiring pattern metal layer is transferred to the sheet-like substrate by peeling the first metal layer bonded to the second metal layer by the release layer from the second metal layer.

Before or after the transfer, through holes are formed in the sheet-like base material containing the thermosetting resin composition, and the through holes are filled with a thermosetting conductive composition to obtain a composite wiring board with a via conductor.

A multilayer wiring board is obtained by laminating and heating the ceramic substrate and the composite wiring board and pressing them while heating.

According to a third manufacturing method of a wiring board of the present invention, in the manufacturing method of the wiring board using the transfer material according to the second configuration,

At least the second metal layer in the transfer material and the side on which the circuit component is formed are pressed to at least one peripheral surface of the insulating sheet-like base material in an uncured state,

By peeling the said 1st metal layer, at least the said 2nd metal layer and the said circuit component are transferred to the said sheet-like base material, It is characterized by the above-mentioned.

The fourth manufacturing method of the wiring board of the present invention,

Through-holes are formed in the ceramic sheet,                         

On both sides of the ceramic sheet on which the through-holes are formed, a restraining sheet mainly composed of an inorganic composition which is not substantially sintered at the sintering temperature of the ceramic sheet is disposed,

Firing the ceramic sheet together with the restraint sheet,

After firing, the restraint sheet is removed,

The through hole is filled with a thermosetting conductive adjuster to obtain a ceramic substrate with a via conductor,

The side where the wiring pattern metal layer containing the at least 2nd metal layer in the transfer material which concerns on the said 2nd structure was formed was crimped | bonded to at least one peripheral surface of the sheet-like base material of the uncured state containing a thermosetting resin composition,

The wiring pattern metal layer is transferred to the sheet-like base material by peeling the first metal layer bonded to the second metal layer by the release layer from the second metal layer.

Before or after the transfer, through holes are formed in the sheet-like base material containing the thermosetting resin composition, and the through holes are filled with a thermosetting conductive composition to obtain a composite wiring board with a via conductor,

The multilayer wiring board is obtained by laminating the ceramic substrate and the composite wiring board and pressing them while heating.

By using the transfer material according to the second configuration, the circuit component can be transferred to any layer of the multilayer board, and the place of the component can be freed, which greatly improves the freedom of electronic circuit design.

(Embodiment 1)

A schematic schematic example of the first embodiment of the transfer wiring pattern forming material according to the present invention (hereinafter referred to as a first transfer material) is shown in the cross-sectional view of FIG. 1.

As shown, the first transfer material has a first metal layer 101 having an uneven portion (for example, a height of a recessed portion of about 1 to 12 µm) formed on the surface layer portion. In the first metal layer 101, the convex portion forms a shape corresponding to the wiring pattern. The peeling layer 102 which consists of an organic layer or a metal plating layer, and the 2nd metal layer 103 are formed on this convex part area | region. That is, the first transfer material has a three-layer structure in which the first metal layer 101 and the second metal layer 103 are bonded through the release layer 102.

In the first transfer material, the second metal layer 103 is a wiring pattern, and the first metal layer 101 functions as a carrier for transferring the wiring pattern to the substrate. That is, the first metal layer 101 is transferred from the substrate together with the release layer 102 after transferring the second metal layer 103, which is a wiring pattern, to the substrate.

The manufacturing method of the first transfer material is, for example,

(a) forming a three-layer structure by forming a second metal layer containing a metal having the same component as that of the first metal layer through a release layer composed of an organic layer or a metal plating layer on the first metal layer;

(b) The process of forming not only a 2nd metal layer and a peeling layer but a surface layer part of a 1st metal layer in a wiring pattern shape by a chemical etching method, and forming an uneven part in the surface layer part of a 1st metal layer.

According to this manufacturing method, by using chemical etching, such as a photolithography method, a 2nd metal layer can be formed in a fine wiring pattern. In addition, since the metal foil constituting the wiring pattern (second metal layer) includes the same material as the metal foil (first metal layer) constituting the carrier, the second metal layer is formed on the first metal layer constituting the carrier in one etching step. Unevenness | corrugation of the same pattern as a wiring pattern can be formed.

Moreover, the 1st transfer material of this embodiment reuses the 1st metal layer which peeled after use, and forms the 2nd metal layer of the same shape as the convex part of this 1st metal layer through peeling layers, such as a plating layer, and is the same transfer material. Can play. Alternatively, the first metal layer may be applied to other uses, such as a pattern forming material for convex printing. Therefore, since the 1st transfer material of this embodiment can utilize a resource effectively, it is very advantageous at the point of resource saving and waste reduction. Moreover, this is the same also about each transfer material demonstrated in other embodiment mentioned later.

Moreover, circuit components, such as an inductor, a capacitor | condenser, a resistor, or a semiconductor element, can be formed so that it may electrically connect to the wiring pattern of the transfer material of this embodiment, and it can also transfer with a wiring pattern to a board | substrate. The inductor, the capacitor, the resistor, and the passive component are preferably formed on the transfer material by a printing method such as screen printing.

(Embodiment 2)

Next, the structural outline of an example of 2nd Embodiment (Hereinafter, it is called a 2nd transfer material) of the transfer material of this invention is shown in sectional drawing of FIG.

As shown in FIG. 2, the second transfer material has a first metal layer 101 having an uneven portion formed in the surface layer portion. The convex portion forms a shape corresponding to the broken line pattern. The second transfer material has a four-layer structure in which a peeling layer 102 made of an organic layer or a metal plating layer and a second metal layer 103 are formed on the convex portion region, and a third metal layer 104 is formed thereon. That is, the first metal layer 101 and the second metal layer 103 are bonded through the release layer 102.

In the second transfer material, the second metal layer 103 and the third metal layer 104 are wiring patterns having a two-layer structure, and the first metal layer 101 functions as a carrier for transferring the wiring pattern to the substrate. That is, the first metal layer 101 is transferred from the substrate together with the release layer 102 after transferring the second metal layer 103 and the third metal layer 104, which are wiring patterns, to the substrate.

The manufacturing method of the second transfer material is, for example,

(a) forming a three-layer structure by forming a second metal layer containing a metal having the same component as that of the first metal layer through a peeling layer composed of an organic layer or a metal plating layer on the first metal layer;

(b) forming a plating resist in an arbitrary region on the second metal layer, such that the exposed region without covering the plating resist becomes a wiring pattern shape;

(c) forming a third metal layer made of a plating layer on the exposed wiring pattern region on the surface of the second metal layer by a pattern plating method;

(d) removing the plating resist to form the third metal layer on the second metal layer, and forming a convex portion in the shape of a wiring pattern;

(e) a step of selectively removing the upper layer portion of the second metal layer, the peeling layer, and the first metal layer in the region where the third metal layer is not formed by the chemical etching method.

In this manufacturing method, when a metal having the same component as the second metal layer is used as the third metal layer, for example, when a copper plating layer (third metal layer) is formed on the copper foil (second metal layer), Since the additive method is adopted, the second and third metal layers can be formed in a fine wiring pattern.

Moreover, since a 2nd metal layer and a peeling layer are thin compared with a 3rd metal layer, it can remove by a short time etching process, and can basically leave the layer thickness of a 3rd metal layer hardly reducing. Therefore, the thickness of the wiring pattern can be arbitrarily controlled.

On the other hand, when gold (third metal layer) is formed by pattern plating on a metal different from the second metal layer, for example, copper foil (second metal layer) as the third metal layer, the third metal layer functions as an etching resist, so that the wiring The upper layer portions of the second metal layer, the peeling layer, and the first metal layer in the region where the third metal layer having the pattern shape is not formed can be selectively removed. When gold is used for the third metal layer, the uppermost layer of the wiring pattern of the transfer material becomes gold. For example, if a bare chip or a SAW (filter surface acoustic wave filter) of the bear is mounted on the wiring pattern, a low resistance can be obtained. A stable connection can be obtained. Moreover, the same effect can be acquired also when silver is used for a 3rd metal layer.

Moreover, in the said manufacturing method, it is preferable to roughen the surface of the said 2nd metal layer before forming a 3rd metal layer on the said 2nd metal layer. Before the third metal layer is formed, before the mask for forming the wiring pattern (the plating resist) is formed on the second metal layer or along the wiring pattern on the second metal layer masked in the shape of the wiring pattern. , Before forming the third metal layer. As described above, when the second metal layer is roughened, adhesion between the second metal layer and the third metal layer is improved.

In the above production method, it is preferable to form the third metal layer on the second metal layer by electroplating. By forming the third metal layer or the metal layer for forming the wiring pattern by the electrolytic plating method, not only proper adhesion can be obtained on the adhesive surface between the second metal layer and the third metal layer, but also the metal Since no gap is generated between the layers, a good wiring pattern can be formed even by performing etching or the like, for example. On the other hand, after forming the said 3rd metal layer by panel plating on a 2nd metal layer, you may mask on a wiring pattern, and pattern formation may be performed. In this case, it is effective to prevent surface oxidation of the second metal layer after transfer and to improve solder leakage.

In the above manufacturing method, it is preferable to process the second and third metal layers into the wiring pattern shape by including the surface layer portion of the first metal layer by the chemical etching method.

In the above production method, for the same reason as described above, the second metal layer comprises at least one metal selected from the group consisting of copper, alumina, silver and nickel, and particularly preferably copper. Since the 1st metal layer forms the convex part like the wiring pattern (2nd metal layer) in the surface layer part simultaneously with the etching of a 2nd metal layer by chemical etching, it is preferable to have the same metal component as a 2nd metal layer. Especially, it is preferable that a 1st and 2nd metal layer consists of copper foil, Especially preferably, it is an electrolytic copper foil.

It does not specifically limit as a manufacturing method of the said 1st and 2nd metal layer, For example, it can manufacture by a well-known metal foil manufacturing method etc ..

As said roughening process, blackening process, a soft etching process, a sandblasting process, etc. can be employ | adopted, for example.

Moreover, circuit components, such as an inductor, a capacitor | condenser, a resistor, or a semiconductor element, can be formed so that it may electrically connect to the wiring pattern of the transfer material of this embodiment, and it can also transfer with a wiring pattern to a board | substrate. Moreover, it is preferable to form passive components, such as an inductor, a capacitor, and a resistor, on the transfer material by printing methods, such as screen printing.

(Embodiment 3)

Next, the structure outline of an example of 3rd embodiment (hereinafter called 3rd transfer material) of the transfer material of this invention is shown in sectional drawing of FIG.

As shown, the third transfer material has a first metal layer 101 having an uneven portion formed in the surface layer portion. The convex portion forms a shape corresponding to the wiring pattern. As for the third transfer material, a peeling layer 102 made of an organic layer or a metal plating layer and a second metal layer 103 are formed on the convex portion, and a third metal layer 104 is formed thereon, and a fourth metal layer thereon. It consists of a 5-layered structure in which 105 is formed. The first metal layer 101 and the second metal layer 103 are joined through the release layer 102.                     

In the third transfer material, the second metal layer 103, the third metal layer 104 and the fourth metal layer 105 are wiring patterns having a three-layer structure. The first metal layer 101 functions as a carrier for transferring the wiring pattern to the substrate. That is, the first metal layer 101 transfers the second metal layer 103, the third metal layer 104, and the fourth metal layer 105, which are wiring patterns, to the substrate, and then peels off from the substrate together with the release layer 102. do.

The manufacturing method of a 3rd transfer material is as follows, for example.

(a) forming a three-layer structure on the first metal layer by forming a second metal layer containing a metal having the same component as that of the first metal layer through the release layer;

(b) forming a plating resist in an arbitrary region on the second metal layer so that the exposed region without covering the plating resist becomes a wiring pattern shape;

(c) manufacturing a third metal layer made of a plating layer on the exposed wiring pattern region in the second metal layer;

(d) producing a fourth metal layer on the third metal layer, the fourth metal layer comprising a metal component that is chemically stable with respect to the etchant that corrodes the first to third metal layers with a metal component different from the first to third metal layers. and,

(e) removing the plating resist so that two layers of the third and fourth metal layers are formed in the convex portion of the wiring pattern shape;

(f) selectively removing the upper layer portions of the second metal layer, the peeling layer, and the first metal layer in regions where the third and fourth metal layers having the wiring pattern shape are not formed by the chemical etching method. .                     

According to this manufacturing method, since the above-mentioned reason and the additive method are employ | adopted, a fine wiring pattern can be formed. Moreover, the thickness of a wiring pattern can be arbitrarily controlled.

In the above production method, it is preferable to roughen the surface of the second metal layer before forming the third metal layer on the second metal layer. Before forming the third metal layer, before forming the mask for forming the wiring pattern on the second metal layer or along the wiring pattern on the second metal layer masked in the shape of the wiring pattern, the third metal layer is formed. Say before forming. As described above, when the second metal layer is roughened, adhesion between the second metal layer and the third metal layer is improved.

In the above production method, it is preferable to form the third metal layer on the second metal layer by electroplating. By forming the third metal layer or the metal layer for forming the wiring pattern by the electrolytic plating method, not only proper adhesion can be obtained on the adhesive surface between the second metal layer and the third metal layer, but also the metal Since no gap is generated between the layers, a good wiring pattern can be formed even by performing etching or the like, for example.

In addition, after forming the said 3rd metal layer by panel plating on a 2nd metal layer, you may mask on a wiring pattern, and pattern formation may be performed. In this case, it is effective to prevent surface oxidation of the second metal layer after transfer and to improve solder leakage.

In the above production method, the fourth metal layer formed on the third metal layer is preferably formed by an electroplating method. As the material of the fourth metal layer, a chemically stable metal component of the step (f) is selected by selecting a chemically stable metal component with respect to an etching solution that corrodes the first to third metal layers, that is, the first to third metal layers. Also, the second, third and fourth metal layers can be processed into a wiring pattern shape together with the surface layer portion of the first metal layer without reducing the thickness thereof, which is preferable.

In the above production method, for the same reason as described above, the second and third metal layers contain at least one metal selected from the group consisting of copper, aluminum, silver and nickel, and particularly preferably include copper. Since the 1st metal layer forms the convex part like the wiring pattern (2nd metal layer) in the surface layer part simultaneously with the etching of a 2nd metal layer by chemical etching, it is preferable to have the same metal component as a 2nd metal layer. Especially, it is preferable that these metal layers consist of copper foil, for example, Especially preferably, it is electrolytic copper foil. As the fourth metal layer, for example, a chemically stable Ag or Au plating layer having low resistance is preferable.

Although it does not specifically limit as a manufacturing method of the said 1st and 2nd metal layer, For example, it can manufacture by well-known metal foil manufacturing method etc ..

As said roughening process, blackening process, a soft etching process, a sand blast process, etc. can be employ | adopted, for example.

Further, in the first, second and third transfer materials of the above embodiments 1 to 3, it is preferable that the adhesive strength between the first metal layer and the second metal layer through the release layer is weak, for example, 50 gf / cm or less. . The release layer may be an organic layer much thinner than 1 μm having an adhesive force, such as a urethane resin, an epoxy resin, a phenol resin, or the like, which is a thermosetting resin, but is not limited thereto, and other thermoplastic resins may be used. However, when it is thicker than 1 micrometer, peeling performance may deteriorate and transfer may become difficult.

In the first to third transfer materials, a plating layer may be interposed as a release layer for the purpose of intentionally lowering the adhesive force. For example, a metal plating layer, a nickel plating layer, a nickel-phosphorus alloy layer, or an aluminum plating layer or a chromium plating layer, which is much thinner than 1 μm, may be interposed between copper foils (first and second metal layers) to have peelability. You may. Accordingly, after the second metal layer is transferred to the substrate, the second metal layer is difficult to peel off from the first metal layer, so that only the second metal layer is easily transferred to the substrate. When the release layer is composed of a metal plating layer, a thickness level of 100 nm to 1 μm is sufficient, and as the thickness becomes thicker, it is preferable to be thinner than at least 1 μm.

In the first to third transfer materials, if the peeling layer is intentionally difficult to be peeled from the first metal layer by Au plating, when the first metal layer is peeled from the substrate after the transfer, the peeling layer is formed of the wiring pattern. It remains on the surface of the second metal layer. Thereby, the wiring pattern in which the surface was Au-plated was obtained, and it is excellent in FC mounting (flip chip mounting), component mounting, etc.

In the first to third transfer materials, the first metal layer preferably includes at least one metal selected from the group consisting of copper, aluminum, silver, and nickel, but particularly preferably copper. The second metal layer, like the first metal layer, preferably contains at least one metal selected from the group consisting of copper, aluminum, silver and nickel, but particularly preferably copper. Moreover, although the said metal may be one type, you may use two or more types together.

Moreover, in the said 1st-3rd transfer material, when performing etching etc., for example, it is easy to process the metal layer of a two-layer structure simultaneously, It is preferable that the said 1st metal layer and the 2nd metal layer contain the metal of the same component. In this case, since there is no difference in coefficient of thermal expansion between the first metal layer and the second metal layer, pattern deformation hardly occurs at the time of heating, and is suitable for transferring fine wiring patterns. Moreover, when using a plating layer for a peeling layer, it is preferable that it can process with a copper etching liquid. Moreover, if the metal of the said same component is included, the kind of metal will not be restrict | limited in particular, What consists of copper foil is preferable, Since it is excellent in electroconductivity, Especially preferably, it is electrolytic copper foil. Moreover, one type may be sufficient as the said metal and it may use two or more types together.

Moreover, in the said 1st-3rd transfer material, it is preferable that center line average roughness Ra of the surface of the said 2nd metal layer is 2 micrometers or more, Especially preferably, it is 3 micrometers or more. In the case of the 1st transfer material, when the said centerline average roughness is less than 2 micrometers, there exists a possibility that adhesiveness with the board | substrate to be transferred may become inadequate. On the other hand, in the second and third transfer materials, when the center line average roughness is less than 2 μm, the adhesion between the metal layers constituting the multilayer wiring pattern becomes insufficient, for example, when etching the metal layer, the metal layer gap There is a risk that the etching liquid enters the wiring pattern and the wiring pattern becomes poor.

Moreover, in the said 1st-3rd transfer material, it is preferable that the thickness of a said 2nd metal layer is the range of 1-18 micrometers, Especially preferably, it is the range of 3-12 micrometers. When the thickness is thinner than 3 mu m, there is a fear that good conductivity is not exhibited when the second metal layer is transferred to the substrate, and when the thickness is thicker than 18 mu m, there is a fear that it is difficult to form a fine wiring pattern. have.

Moreover, in the said 1st-3rd transfer material, it is preferable that the thickness of the said 1st metal layer is the range of 4-40 micrometers, Especially preferably, it is the range of 20-40 micrometers. Since the first metal layer functions as a carrier and the surface layer portion is etched like the wiring layer to form a structure having irregularities, the first metal layer is preferably a metal layer having a sufficient thickness. Moreover, the 1st-3rd transfer material made the carrier the metal layer (1st metal layer), and shows sufficient mechanical strength and heat resistance with respect to the thermal deformation which arises at the time of transfer, and the stress deformation of a plane direction.

The thickness of the entire first to third transfer materials is usually in the range of 40 to 150 m, and preferably in the range of 40 to 80 m. In addition, the line width of the wiring pattern is usually required to be about 25 μm as a fine line width, and such a line width is also preferable in the present invention.

Moreover, circuit components, such as an inductor, a capacitor | condenser, a resistor, or a semiconductor element, can be formed so that it may electrically connect to the wiring pattern of the transfer material of this embodiment, and it can also transfer with a wiring pattern to a board | substrate. Moreover, it is preferable to form passive components, such as an inductor, a capacitor, and a resistor, on the transfer material by printing methods, such as screen printing.

(Embodiment 4)

In this embodiment, the manufacturing method of the wiring board using the various transfer wiring pattern forming materials (1st-3rd transfer material) of this invention, and the structure of the wiring board produced by the manufacturing method are demonstrated.

As the manufacturing method of the wiring board using the transfer material which concerns on this invention, the following two manufacturing methods are mentioned, for example.

First, the first manufacturing method

(h) At least one of the first to third transfer materials described in the first to third embodiments is prepared, and the wiring layer side (the side on which the second metal layer is formed) is at least one of the sheet-like substrate (substrate material). Arranging them in contact with the surface of and bonding them;

(i) It is a method including the process of transferring only a wiring layer to the said sheet-like base material by peeling a 1st metal layer from the said transfer material.

Thereby, the wiring board in which the fine wiring pattern was formed in concave shape in the said sheet-like base material can be manufactured. In addition, since the wiring portion has a concave shape, the concave portion can be used for positioning, and is excellent in, for example, semiconductor flip chip mounting.

The second manufacturing method is a method including a step of laminating the wiring board obtained by the first manufacturing method in two or more layers in the manufacturing method of the multilayer wiring board. According to the first manufacturing method, since the wiring pattern can be transferred and formed at a low temperature of 100 ° C. or lower, the wiring pattern can be transferred even if any of the ceramic green sheet and the thermosetting resin sheet is used as the sheet-based substrate. After a while, the sheet can be kept in an uncured state. Thereby, after laminating | stacking the uncured wiring board, it becomes possible to collectively thermoset shrinkage. Therefore, compared with the conventional manufacturing method of the multilayer wiring board which repeats the step of stacking the wiring boards one by one, the multilayer wiring board having four or more layers can be used. There is an advantage that no correction is necessary. In addition, the process can be simplified.

As a result, a multilayer wiring board having a fine wiring pattern can be manufactured. However, in the multilayer wiring board, the wiring pattern formed on the wiring board of the inner layer need not be concave. Therefore, in the transfer material for forming this wiring pattern, the surface layer portion of the first metal layer need not be formed in an uneven shape, and may be flat. In this case, for example, by controlling the chemical etching time when forming the wiring pattern shape, it is possible to stop the processing in the step etched to the release layer so that the first metal layer is not etched. In addition, when the peeling layer is a Ni-based plating layer, for example, when a base liquid in which ammonium ion is added to an aqueous copper chloride solution is used as an etching solution, only the copper foil (wiring pattern) portion can be etched away, leaving a peeling layer. . When this transfer material peels a carrier copper foil (1st metal layer) after crimping | bonding to a board | substrate, since the plating layer which is a peeling layer peels simultaneously, there is no problem in transfer.

When the first transfer material is used, the convex portions of the second metal layer and the first metal layer are filled in the sheet-like base material by pressing the first transfer material onto the sheet-like base material (substrate material). Thereafter, by peeling the first metal layer, a wiring board having a recessed part on the surface and a wiring layer made of a second metal layer at the bottom of the recessed part is produced.

In the case where the second transfer material is used, the second transfer material is pressed against the sheet-like substrate, for example, after the convex portions of the second and third metal layers and the convex portions of the first metal layer are filled in the sheet-like substrate. 1 The metal layer is removed. As a result, a wiring board having a concave portion of the same depth as the thickness of the convex portion of the first metal layer on the surface, and a wiring layer having a two-layer structure consisting of the second and third metal layers formed at the bottom of the concave portion.

Similarly, in the case where the third transfer material is used, for example, the first metal layer is removed after the entirety of the second, third and fourth metal layers and the convex portions of the first metal layer are filled in the sheet-like substrate. As a result, a wiring board having a concave portion having a depth equal to the thickness of the convex portion of the first metal layer on the surface, and having a wiring layer having a three-layer structure composed of the second, third and fourth metal layers at the bottom of the concave portion is provided. do.

In the above method of manufacturing the first and second wiring boards, the sheet-like base material includes an inorganic filler and a thermosetting resin composition, and has at least one through hole, and the through hole is preferably filled with a conductive paste. Do. Accordingly, a high density mounting composite wiring board having excellent thermal conductivity and having, for example, an IVH structure in which wiring patterns are electrically connected to both surfaces of the substrate by the conductive paste can be easily obtained. When the sheet-like substrate is used, no high temperature treatment is necessary at the time of manufacturing the wiring board, and a low temperature treatment of about 20 ° C., which is a curing temperature of the thermosetting resin, is sufficient.

It is preferable that the ratio of an inorganic filler is 70-95 weight%, and the ratio of a thermosetting resin composition is 5-30 weight%, Especially preferably, the said sheet-like base material is 85-90 weight%, The proportion of the thermosetting resin composition is 10 to 15% by weight. Since the sheet-like substrate can contain a high concentration of the inorganic filler, the thermal expansion coefficient, thermal conductivity, dielectric constant and the like on the wiring board can be arbitrarily set by the content thereof.

The inorganic filler is preferably at least one inorganic filler selected from the group consisting of Al ₂ O ₃ , MgO, BN, AlN, and SiO ₂ . By appropriately determining the type of the inorganic filler, for example, thermal conductivity, thermal expansion, and dielectric constant can be set to desired conditions. For example, the thermal expansion coefficient in the planar direction in the sheet-like substrate can be set to the same level as that of the semiconductor to be mounted, and high thermal conductivity can be provided.

Among the inorganic fillers, for example, the sheet-like base material using Al ₂ O ₃ , BN, AlN or the like is excellent in thermal conductivity, and the sheet-like base material using MgO is excellent in thermal conductivity and can increase the coefficient of thermal expansion. In addition, SiO ₂ , In particular, when amorphous SiO ₂ is used, the coefficient of thermal expansion is small and light, and a sheet-like base material having a low dielectric constant can be obtained. Moreover, one type may be sufficient as the said inorganic filler, and it may use two or more types together.

The sheet-like base material containing the said inorganic filler and a thermosetting resin composition can be produced, for example by the following methods. First, the solvent for viscosity adjustment is added to the mixture containing the said inorganic filler and a thermosetting resin composition, and the slurry which is arbitrary slurry viscosity is prepared. As said viscosity preparation solvent, methyl ethyl ketone, toluene, etc. can be used, for example.

Then, on the release film prepared in advance, by using the slurry, for example, a film was prepared by a doctor blade method or the like and treated at a temperature lower than the curing temperature of the thermosetting resin to exert the solvent for viscosity adjustment. By removing the release film, a sheet-like substrate can be produced.

Although the film thickness at the time of manufacturing the said film | membrane is suitably determined according to the composition of the said mixture and the quantity of the said solvent for viscosity adjustment to add, it is the range of 80-200 micrometers thickness normally. Moreover, although the conditions which exhibit the said solvent for viscosity preparation are suitably determined according to the kind of the said solvent for viscosity preparation, the kind of the said thermosetting resin, etc., it is 5 to 15 minutes normally at the temperature of 70-150 degreeC.

As the release film, an organic film can usually be used, for example, in the group consisting of polyethylene, polyethylene terephthalate, polyethylene naphthalate, polyphenylene sulfide (PPS), polyphenylene terephthalate, polyimide and polyamide It is preferred that it is an organic film comprising at least one resin selected, particularly preferably PPS.

Moreover, as another sheet-like base material, the sheet-like reinforcement material is impregnated with the thermosetting resin composition, and there exists a sheet-like base material which has at least 1 through-hole, and the said through-hole is filled with the electrically conductive paste.

The sheet-like reinforcing material is not particularly limited as long as it is a porous material capable of holding the thermosetting resin, at least one selected from the group consisting of a woven fabric of glass fibers, a nonwoven fabric of glass fibers, a woven fabric of heat resistant organic fibers, and a nonwoven fabric of heat resistant organic fibers. It is preferable that it is a sheet-like reinforcing material of. As said heat resistant organic fiber, a wholly aromatic polyamide (aramid resin), wholly aromatic polyester, polybutylene oxide, etc. are mentioned, for example, Aramid resin is especially preferable. Another preferable base material is films, such as a polyimide. By using films, such as polyimide, the board | substrate excellent in fine liner fine via etc. can be obtained.

The thermosetting resin is not particularly limited as long as it is heat resistant, but is particularly excellent in heat resistance, and therefore it is preferable to include at least one resin selected from the group consisting of an epoxy resin, a phenol resin and a cyanate resin or a polyphenylene phthalate resin. Do. Moreover, any one kind of said thermosetting resin may be used, and it may use two or more types together.

Such a sheet-like base material can be produced by, for example, depositing the sheet-like reinforcing material in the thermosetting resin composition and then drying it to a semi-cured state. It is preferable to perform the said deposition so that the ratio of the said thermosetting resin in the whole said sheet-like base material may be 30 to 60 weight%.

In the manufacturing method of the said multilayer wiring board, when using the sheet-like base material containing the above-mentioned thermosetting resin, it is preferable to perform lamination | stacking of the said wiring board by hardening of the said thermosetting resin by a heat press process. According to this, in the lamination step of the wiring board, a low temperature treatment of about 200 ° C., which is a curing temperature of the thermosetting resin, is sufficient.

As another sheet-like base material, in a green sheet containing an organic binder, a plasticizer and a ceramic powder, there is at least one through hole, and the through hole is filled with a conductive paste. This sheet-shaped base material has high heat resistance, good sealing property, and is excellent also in thermal conductivity.

The ceramic powder preferably comprises at least one ceramic selected from the group consisting of Al ₂ O ₃ , MgO, ZrO ₂ , TiO ₂ , BeO, BN, SiO ₂ , CaO and glass, particularly preferably Al ₂ O _{3 It} is a mixture of 50-55 weight% and 45-50 weight% of glass powder. Moreover, one type of the said ceramic may be used and it may use two or more types together.

As the organic binder, for example, polyvinyl butyrate (PVB), acrylic resin, methyl cellulose resin and the like can be used, and as the plasticizer, for example, butyl benzyl butyrate (BBP), dibutyl phthalate (DBP) and the like can be used. have.

The green sheet containing such ceramic powder or the like can be produced, for example, by the same method as the method for producing the sheet-like base material containing the inorganic filler and the thermosetting resin. In addition, each processing condition is suitably determined by the kind etc. of the said constituent material.

In the manufacturing method of the multilayer wiring board, when the green sheet is used as the sheet-like substrate, lamination of the wiring substrate is performed by adhesion of the sheet-like substrate by heat and pressure treatment and sintering of ceramic powder by firing. It is preferable.

The thickness of the said sheet-like base material as mentioned above is the range of 30-250 micrometers normally.

As mentioned above, it is preferable that the said sheet-like base material has at least 1 through hole, and the said through hole is filled with the electrically conductive paste. The position of the through hole is not particularly limited as long as it is usually formed in contact with the wiring pattern, but the pitch is preferably formed at a position such as 250 to 500 µm.

The size of the through hole is not particularly limited, but is usually in the range of 100 to 200 µm in diameter, and preferably in the range of 100 to 150 µm in diameter.

The formation method of the through-hole is appropriately determined according to the type of the sheet-like base material, and the like, for example, carbon dioxide laser processing, processing by punching machine, collective processing by mold, and the like.

Although it will not restrict | limit especially if it has electroconductivity as said electroconductive paste, Resin etc. containing the particle | grains of an electroconductive metal material can be used normally. Copper, silver, gold, silver palladium, etc. can be used as said conductive metal material, and thermosetting resins, such as an epoxy resin, a phenol resin, and an acrylic resin, can be used as said resin. In addition, the content of the conductive metal material in the conductive paste is usually in the range of 80 to 95% by weight. In addition, when the said sheet-like base material is a ceramic green sheet, glass and an acrylic binder are used instead of a thermosetting resin.

Next, the method of adhering the transfer material and the sheet-like substrate in the step (h) and the method of peeling the first metal layer from the second metal layer in the step (i) are not particularly limited, but the sheet-like When a base material contains a thermosetting resin, it can carry out by the method as shown below, for example.

First, the transfer material and the sheet-like substrate are disposed as described above, and heat-pressurized to thereby melt-soften the thermosetting resin in the sheet-like substrate and form a wiring pattern on the sheet-like substrate ( A second metal layer). Subsequently, these are processed at the softening temperature or hardening temperature of the said thermosetting resin, and in the latter case, the said resin is hardened. Thereby, the said transfer material and a sheet-like base material can be adhere | attached, and the adhesion of the said 2nd metal layer and a sheet-like base material is also fixed.

The heating and pressing conditions are not particularly limited as long as the thermosetting resin is not completely cured, but the pressure is usually about 9.8 × 10 ^{5 to} 9.8 × 10 ⁶ Pa (10 to 100 kgf / cm 2), at a temperature of 70 to 260 ° C., The time is 30 to 120 minutes.

After the transfer material is adhered to the sheet-like substrate, for example, the first metal layer, which is the carrier layer, is pulled out and peeled in the release layer, whereby the first metal layer can be peeled from the second metal layer. That is, since the adhesive strength between the first metal layer and the second metal layer through the release layer is weaker than that between the sheet metal substrate and the second metal layer, which is the wiring layer, the adhesive surface between the first metal layer and the second metal layer is It peels and only a 2nd metal layer is transferred to the said sheet-like base material, and a 1st metal layer is peeled off. Moreover, you may perform hardening of the said thermosetting resin after peeling a 1st metal layer from the said 2nd metal layer.

In addition, when the said sheet-like base material is a green sheet containing the said ceramic, it can carry out by the method as shown below, for example. In the same manner as described above, by performing the heat press treatment, the metal layer forming the wiring pattern can be embedded in the sheet-like substrate, and the sheet-like substrate and the transfer material can be adhered to each other. Thereafter, similarly to the above-mentioned, constituent materials of the transfer material other than the wiring layer (second metal layer or the like) are removed by the peeling. Then, on both sides or one side of the green sheet to which the second metal layer or the like forming the wiring pattern is transferred, a restraining sheet mainly composed of an inorganic composition which is not substantially sintered and contracted at the sintering temperature of the green sheet is disposed and laminated. Thereafter, the binder removal treatment and the sintering treatment are performed. Further, the restraint sheet can then be removed to form a ceramic substrate having a wiring pattern composed of a second metal layer or the like.

The heating and pressing conditions carried out at the time of the transfer are appropriately determined by, for example, the type of thermosetting resin contained in the green sheet and the conductive paste, and the pressure is usually about 9.8 × 10 ^{5 to} 9.8 × 10 ⁷ Pa (10 to 200 kgf). / Cm 2), the temperature is 70 to 100 ° C., and the time is 2 to 30 minutes. Therefore, the wiring pattern can be formed without any damage to the green sheet.

Heating and pressing conditions for arranging and laminating a restraint sheet having an inorganic composition that does not substantially sinter shrink at a sintering temperature of the green sheet as a composition component on both surfaces or one side of the green sheet on which the wiring pattern is formed are, for example, the green sheet and Although it determines suitably according to the kind of thermosetting resin contained in a restraint sheet | seat, etc., it is usually about 1.96 * 10 <^6> -1.96 * 10 <^7> Pa (20-200kgf / cm <2>), temperature 70-100 degreeC, and time 1-10 minutes.

The debinding treatment is suitably determined by, for example, the type of the binder, the metal constituting the wiring pattern, and the like. Generally, the temperature rise time is 10 hours at a temperature of 500 to 700 ° C. using an air flow passage, and the holding time is: It can carry out by processing for 2 to 5 hours. In particular, in the case of copper foil wiring, using a green sheet composed of organic binders such as methacrylic acid-based acrylic binder excellent in thermal decomposition, debinding and firing are performed under a nitrogen atmosphere which is a non-oxidizing atmosphere.

The conditions of the firing treatment are appropriately determined depending on, for example, the type of the ceramic, and the like. Usually, the temperature is 860 to 950 ° C. for 30 to 60 minutes in air or nitrogen using a belt furnace. .

Here, the said 2nd manufacturing method is further demonstrated. When a multilayer wiring board is produced by this method, as described above, a single layer wiring board is laminated, and the interlayers are bonded. In addition, after stacking a plurality of single-layer wiring boards, it is also possible to collectively adhesively fix them.

For example, in the case of manufacturing a multilayer wiring board by laminating a wiring board produced using a sheet-like base material containing a thermosetting resin, as described above, the sheet-like base material is transferred from the transfer material to the sheet-like base material by heat and pressure treatment. Only the wiring layer (second metal layer, etc.) is transferred to obtain a single layer wiring board. In addition, when obtaining this wiring board, the thermosetting resin is not cured and is kept in an uncured state. Many single-layer wiring boards are prepared and stacked. Then, the laminate is heat-pressurized at the curing temperature of the thermosetting resin, and the thermosetting resin is cured to adhesively fix the wiring board. In the single layer wiring board, if the temperature of the heating and pressing process for transferring the wiring layer is intentionally set to 100 ° C or lower, the sheet-like substrate can be treated almost like prepreg even after the transfer. As a result, a multilayer wiring board can be produced by stacking single-layer wiring boards together and then adhesively fixing them together without stacking the single-layer wiring boards one after another.

In the case of a build-up substrate having a glass epoxy substrate or the like as a core layer, by using the transfer material of the present invention, the sheet-like substrate transfers the wiring pattern in an uncured state to form a single-layer wiring board, and these single layers The wiring boards can be sequentially laminated as they are in an uncured state, and can be produced by a method of collectively curing the laminate.

In the case of manufacturing a multilayer wiring board by laminating a ceramic wiring board using a sheet-like base material containing ceramic, for example, as described above, the transfer material is pressed onto the sheet-shaped base material so that only the wiring layer (second metal layer, etc.) is pressed. After the transfer, a large number of single-layer ceramic wiring boards are laminated, and heat-pressing treatment and firing of the ceramics are performed to adhesively fix the wiring boards.

Although the number of laminations in the multilayer wiring board is not particularly limited, it is usually 4 to 10 layers, and may be up to 20 layers. Moreover, the thickness of the whole multilayer wiring board is 200-1000 micrometers normally.

Further, since the wiring board constituting the outermost layer of the multilayer wiring board is excellent in electrical connection, as described above, the surface concave by using the transfer material (first, second or third transfer material) of the present invention. It is preferable that it is a structure which the wiring layer (2nd metal layer etc.) was filled in the part. The intermediate layer other than the outermost layer of the multilayer wiring board may be a wiring board having a flat surface structure, but may be a wiring board having a wiring layer (second metal layer or the like) formed in the recess of the surface.

Next, the structure of the wiring board of this invention is demonstrated in detail below.                     

As shown in FIG. 8, the first embodiment of the wiring board manufactured by using the transfer material (first, second or third transfer material) of the present invention has a wiring pattern (on the surface of the sheet-like base material 805). In the wiring board on which the 801 is formed, at least one recess has at least one surface, and the wiring pattern 801 is formed at the bottom of the recess. Further, a plating layer 802 such as gold is formed on the wiring pattern 801 by plating treatment.

According to this, for example, when semiconductor flip chip mounting is performed on this wiring board, as shown in FIG. 9, the concave portion can be used to position the bump 904 formed in the semiconductor 905. In addition, since the contact portion 903 with the semiconductor 905 is formed on a chemically stable gold plating layer or the like, the contact resistance is reduced and the reliability is improved. In addition, since the plating process is performed using the concave portion, a creeping distance can be ensured, short circuit between platings does not occur, and the reliability of the fine wiring pattern can be maintained.

In the wiring board, the thickness of the wiring pattern is preferably in the range of 3 to 35 mu m. When the said thickness is thinner than 3 micrometers, there exists a possibility that favorable electroconductivity may not be obtained. On the other hand, when it is thicker than 35 micrometers, there exists a possibility that it may become difficult to form a fine wiring pattern.

In the wiring board, the depth of the recess is preferably in the range of 1 to 12 mu m. When the said depth is deeper than 12 micrometers, when mounting a semiconductor, for example, there exists a possibility that all the bumps may not contact the said wiring pattern, or the sealing time of sealing resin may take. Moreover, when the said depth is shallower than 1 micrometer, there exists a possibility that the said recessed part may not be used for positioning of the said bump.

The second embodiment of the wiring board manufactured using the transfer material of the present invention is, for example, as shown in Fig. 10 (j), a multilayer in which wiring patterns (1002, etc.) are formed on the surface of the sheet-like substrate 1001. A wiring board, characterized in that it has at least one recessed part on at least one surface, and the said wiring pattern was formed in the bottom part of the said recessed part. By using the transfer material of the present invention, in this multilayer wiring board, it is possible to form a wiring pattern in the wiring board of each layer in the uncured or green sheet state. Thereby, after laminating | stacking a single layer wiring board, it becomes possible to carry out adhesive fixation at once, or to bake a sheet-like base material and metal foil wiring pattern simultaneously. As a result, a multilayer wiring board having extremely high positional accuracy of wiring patterns including interlayer vias of each layer can be obtained.

As shown in FIG. 11, the third embodiment of the wiring board manufactured by using the transfer material of the present invention is an electrically insulating substrate 1608 made of ceramic and an electrically insulating substrate 1602 including at least a thermosetting resin composition. It is a multilayer wiring board which has a laminated structure with. The electrically insulating substrate 1602 is formed in such a state that the wiring pattern does not protrude from the surface by using the transfer material of the present invention. In addition, an electrically insulating sheet comprising an uncured thermosetting resin composition in which a wiring pattern is transferred by the transfer material and an electrically insulating substrate made of ceramic can be laminated, and can be cured collectively at a relatively small press pressure. Multilayer wiring boards can be realized without damaging the layers.

On the other hand, the multilayer wiring board may be produced by forming a wiring pattern on a ceramic substrate in advance by printing and firing, and then joining it with an electrically insulating sheet containing a thermosetting resin composition. However, since the wiring pattern formed by printing becomes a projection, in the process of bonding with the electrically insulating sheet containing a thermosetting resin composition, stress concentration arises and it becomes the starting point of the crack of a ceramic substrate layer in many cases.

As shown in FIG. 12, the fourth embodiment of the wiring board manufactured by using the transfer material of the present invention is, like the wiring board according to the third embodiment, an electrically insulating substrate 1608 made of ceramic, and at least thermosetting. A multilayer wiring board having a laminated structure with an electrically insulating substrate 1602 containing a resin composition. Moreover, in each layer of the electrically insulating board | substrate laminated | stacked, the interlayer via hole 1603 in which the conductive via composition was filled in the predetermined position is arrange | positioned, and the wiring pattern 1610 electrically connected with this is formed. According to this structure, the multilayer wiring connection similar to the wiring rules of the multilayer wiring board which consists only of a ceramic substrate, or the multilayer wiring board which consists only of a resin substrate while being a laminated body of a ceramic substrate and a resin substrate can be obtained.

In this case, as the conductive composition used for the interlayer connection via of the ceramic substrate, the sintered product made of the metal powder and the glass powder is composed of a mixture of the metal powder and the thermosetting resin as the conductive composition used for the interlayer connection via of the resin substrate. The resin composition is used.

Moreover, at the interface between the electrically insulating substrate containing the thermosetting resin composition and the ceramic substrate, the wiring layer formed on the ceramic substrate is embedded in the ceramic substrate without protruding from the surface.

Moreover, in the baking process of a ceramic layer, after placing the restraint sheet which has an inorganic composition which does not sinter shrink substantially at the sintering temperature of a green sheet on both surfaces or one surface of the green sheet to which the wiring pattern was transferred, baking process It is preferable to carry out. Thereby, since non-shrinkage sintering can be implement | achieved in a planar direction, common interlayer via position data can be employ | adopted also in a resin substrate and lamination | stacking.

Of course, after forming a wiring pattern by printing and baking to the ceramic green sheet which filled the via paste previously, this and the electrically insulating sheet containing a thermosetting resin composition may be bonded together, and the interlayer connection of a laminated body may be implement | achieved. However, since the wiring pattern formed by printing becomes a projection, in the process of joining the electrically insulating sheet containing the thermosetting resin composition and the ceramic green sheet, stress concentration occurs and becomes the starting point of the crack of the ceramic substrate layer. There are many.

As shown in Fig. 13, by using the transfer material of the present invention, a ceramic substrate 1708 having a high sintering temperature, such as an aluminum substrate having relatively high mechanical strength or an aluminum nitride substrate characterized by high thermal conductivity, and at least, By the laminated structure with the electrically insulating board 1702 containing a thermosetting resin composition, the multilayer wiring board in which the low resistance wiring was formed can be manufactured. Here, the interlayer via used for the ceramic substrate and the interlayer via used for the resin substrate are also formed of a thermosetting conductive resin composition.                     

Of course, as the ceramic substrate used here, a low-temperature calcined ceramic capable of firing simultaneously with copper or silver, such as an aluminum-based glass ceramic, a Bi-Ca-Nb-O-based ceramic, or the like, may be used.

As shown in FIG. 14, the fifth aspect of the wiring board manufactured using the transfer material of the present invention is similar to the wiring board according to the third or fourth aspect, and includes an electrically insulating substrate containing a thermosetting resin composition. An electrically insulative substrate (1801 · 1802) made of a heterogeneous ceramic having a different composition through an electrically insulative substrate containing a thermosetting resin composition, which is a kind of a heterogeneous multilayer wiring board having a laminated structure with an electrically insulating substrate made of ceramic. ) Are stacked.

According to this structure, heterogeneous lamination between magnetic ceramics and dielectric ceramics, which have been technically difficult due to changes in sintering temperature, plastic shrinkage pattern, or mutual diffusion during sintering, and dielectric ceramics having high dielectric constant and low The heterogeneous lamination with the dielectric ceramic of permittivity can be easily configured. In the manufacturing process of the hetero-layered wiring board of the present invention, the wiring board of each layer is transferred by using a transfer material of the present invention, for example, by transferring a wiring pattern such as copper foil to a green sheet or a sheet containing an uncured thermosetting resin. To produce. Thereby, the laminated body which has wiring of all layers low resistance can be obtained, without damaging at the time of lamination | stacking.

In the wiring board according to the fifth aspect, it is possible to laminate ceramic substrates having different sintering temperatures by interposing an electrically insulating substrate containing a thermosetting resin composition between the ceramic substrates. As a result, for example, it is possible to easily realize a heterogeneous multilayer wiring board having a different dielectric constant of each layer, or a heterogeneous multilayer wiring substrate in which a magnetic layer and a dielectric layer are laminated.

Of course, after forming a wiring pattern by printing and baking to the ceramic green sheet which filled the via paste previously, you may join the electrically insulating sheet containing a thermosetting resin composition, and may perform the interlayer connection of a laminated body. However, since the wiring pattern formed by printing becomes a projection, it often becomes a starting point of the crack of a ceramic substrate layer in the process of joining with the electrically insulating sheet containing a thermosetting resin composition.

As shown in FIG. 15, the sixth form of the wiring board manufactured using the transfer material of the present invention is, as in the wiring board according to the fourth or fifth embodiment, an electrically insulating substrate 1801, 1802 made of ceramic. ) And an electrically insulating substrate 1807 containing at least a thermosetting resin composition. An electrically insulating substrate 1807 including the thermosetting resin composition is disposed on at least the uppermost layer or the lowest layer, and an electrically insulating substrate 1801 · 1802 made of ceramic is disposed on the inner layer. According to this structure, since the layer which covers the outermost surface of a board | substrate is formed from the thermosetting resin composition which has the property which is hard to be broken, it is excellent in fall resistance etc ..

Moreover, in the manufacturing process of these dissimilar laminated wiring boards, the wiring board of each layer is produced by using the transfer material of this invention, for example, transferring wiring patterns, such as copper foil, to a green sheet or the sheet | seat containing an uncured thermosetting resin. do. As a result, a multilayer wiring board can be obtained in which damage does not occur at the time of lamination and where the entire layer has low resistance wiring.

Of course, after forming a wiring pattern by printing and baking to the ceramic green sheet which filled the via paste previously, you may join with the electrically insulating sheet containing a thermosetting resin composition, and may perform the interlayer connection of a laminated body. However, since the wiring pattern formed by printing becomes a projection at the time of lamination | stacking, it is a starting point of the crack of a ceramic substrate layer in the process of bonding with the electrically insulating sheet containing a thermosetting resin composition.

Moreover, circuit components, such as an inductor, a capacitor | condenser, a resistor, or a semiconductor element, can be formed so that it may electrically connect to the wiring pattern of the transfer material of this embodiment, and it can also transfer with a wiring pattern to a board | substrate. In addition, passive components such as an inductor, a capacitor, and a resistor are preferably formed on the transfer material by a printing method such as screen printing.

Next, more specific examples of the first to fourth embodiments will be described below.

(Example 1)

As shown to Fig.4 (a)-(f), the 1st transfer material of this invention was produced.

As shown in FIG. 4A, an electrolytic copper foil having a thickness of 35 μm was prepared as the first metal layer 401. First, the copper salt raw material was melt | dissolved in the alkaline bath, it was electrodeposited to the rotating drum so that it might become high current density, the metal layer (copper layer) was produced, this copper layer was wound up continuously, and the electrolytic copper foil was produced.

Next, as shown in FIG.4 (b), the Ni-P alloy layer was formed in the surface of the said 1st metal layer 401 as the peeling layer 402 by the plating process, about 100 nm in thickness. As the second metal layer 403 for wiring pattern formation, the same electrolytic copper foil as the said 1st metal layer 401 was laminated | stacked by the electroplating method so that it might be set to 9 micrometers in thickness, and the laminated body which consists of a 3-layered structure was produced. .

The roughening process was performed so that the centerline average roughness Ra of the surface might be about 4 micrometers. Moreover, the said roughening process was performed by depositing fine grains of copper in the said electrolytic copper foil.

Next, as shown in Figs. 4C to 4E, the dry film resist (DFR) 404 is pasted by the photolithography method, and the wiring pattern portion is exposed and developed to form a laminate. The surface layer portions of the second metal layer 403, the peeling layer 402, and the first metal layer 401 were etched by chemical etching (immersion in an aqueous ferric chloride solution), and formed in an arbitrary wiring pattern.

Thereafter, as shown in Fig. 4 (f), the first transfer material was obtained by removing the mask portion (DFR 404) with a release agent. Since the first metal layer and the second metal layer are made of the same copper, not only the second metal layer but also the surface layer of the first metal layer can be etched in the shape of a wiring pattern by a single chemical etching. This first transfer material has a structural feature in that the surface layer portion of the first metal layer serving as the carrier layer is also processed into a wiring pattern shape.

In the produced said 1st transfer material, the peeling layer 402 which adhere | attaches the said 1st metal layer 401 and the 2nd metal layer 403 is excellent in chemical-resistance, even if adhesive force itself is weak. Thereby, even if an etching process is performed to the whole laminated body of the 1st metal layer 401, the peeling layer 402, and the 2nd metal layer 403, an interlayer does not peel and a wiring pattern can be formed without a problem. Meanwhile, the adhesive strength between the first metal layer 401 and the second metal layer 403 was 40 gf / cm, and the peelability was excellent. As a result of transferring the second metal layer 403 to the substrate using such a first transfer material, the adhesive surface between the second metal layer 403 and the release layer 402 is easily peeled off, and the second metal layer Only 403 could be transferred to the substrate.

In the first transfer material according to the present embodiment, the carrier (first metal layer) was made of 35 μm copper foil, so that the carrier layer could withstand the strain stress even if the transfer material deformed during transfer.

In the first transfer material, when the surface layer of the first metal layer, which is the carrier layer, the wiring pattern portion becomes a convex portion and the portions other than the wiring pattern become concave portions, when the transfer material is pressed against the sheet-like substrate (substrate material), The base material pushed out from the portion where the wiring pattern is filled easily flows into the recess, and the strain stress in the transverse direction to deform the pattern is easily suppressed. Therefore, the pattern deformation in this Example was only the quantity (0.08%) which generate | occur | produced by the cure shrinkage of the base material.

As a comparison, the surface layer of the first metal layer 401 was not etched at all, and only the second metal layer was formed of the wiring layer using a sheet-like substrate using a transfer material (that is, a transfer material having a flat surface of the carrier layer). As a result of the transfer, the deformation of the pattern was at most 0.16%. In this comparative example, since the carrier is a thick copper foil, the deformation is basically small as in the present embodiment, but in the part where the wiring is concentrated, the area where the base material flows in cannot be secured, so that the wiring pattern is partially somewhat It was confirmed that it was deformed. Although this pattern deformation amount is practically a small value, for example, when the transfer material according to the comparative example is used, the formed wiring pattern becomes flat or convex with the substrate surface, and the concave portion like the first transfer material according to the present embodiment is formed. Therefore, the effect of the transfer material of the present embodiment, which facilitates alignment during flip chip mounting, cannot be obtained. From this, the etching of the 1st metal layer which is a carrier layer could confirm the effect of the transfer material of this invention in which the convex part according to the wiring pattern was formed also in the carrier layer surface.

In this embodiment, a plating layer such as a Ni plating layer, a nickel-phosphorus alloy layer or an aluminum plating layer having a thickness of 200 nm or less is used as the peeling layer, but a peeling layer made of an organic layer may be used. As an organic layer, a solid long aliphatic carboxylic acid etc. are mentioned at normal temperature which can form a compound bond with Cu, for example. Even if these are used, the same transfer material as the transfer material of this embodiment can be realized.

(Example 2)

By the manufacturing method different from the said Example 1, as shown to FIG. 5 (a)-(e), the example of the 2nd transfer material which concerns on this invention was produced. This second transfer material is different in structure from the first transfer material according to the first embodiment and the wiring layer.

First, an electrolytic copper foil having a thickness of 35 μm was prepared as the first metal layer 501. The copper salt raw material was melt | dissolved in the alkaline bath, it was electrodeposited to the rotating drum so that it might become high current density, the metal layer (copper layer) was produced, this copper layer was wound up continuously, and the electrolytic copper foil was produced.

Next, on the surface of the first metal layer 501 made of the electrolytic copper foil, a release layer 502 composed of a nickel plating layer having a thickness of 100 nm or less was formed. As the second metal layer 503 for wiring pattern formation, the same electrolytic copper foil as the said 1st metal layer 501 is laminated | stacked by the electroplating method so that it may become thickness of 3 micrometers, and the 1st metal layer 501, The laminated body which consists of a 3-layered structure of the peeling layer 502 and the 2nd metal layer 503 was produced.

The roughening process was performed with respect to the surface of the 2nd metal layer 503 in this laminated body so that the centerline average roughness Ra of the surface might be about 3 micrometers. Moreover, the said roughening process was performed by depositing fine grains of copper in the said electrolytic copper foil. An adhesive (not shown) was apply | coated on it, and the dry film resist (DFR) 504 used for the photolithographic method was stuck. This DFR 504 has plating resistance and functions as a plating resist. By the above process, the laminated body shown to Fig.5 (a) was produced.

Next, as shown in FIG. 5B, after the DFR 504 is exposed to the wiring pattern shape, development is performed to reach the second metal layer 503 in the wiring pattern region in the DFR 504. A recess was formed. The depth of the recess was 25 μm. Thereafter, as shown in Fig. 5C, a metal layer 505 made of a copper plating layer having a thickness of 20 µm was formed in the recess by the electrolytic copper plating method. Next, as shown in FIG.5 (d), it dipped in the stripping liquid and removed DFR (504).

Finally, as shown in FIG.5 (e), patterning was performed by the chemical etching method which immerses in ferric chloride aqueous solution. This etching is performed to remove the thin second metal layer 503 and the thin release layer 502 (plating layer) having a thickness of 3 µm. As a result, since the etching is performed for a short time, the third metal layer 505 is also slightly etched to have a thickness of about 15 µm, and the surface layer portion of the first metal layer 501 is also partially eroded, as shown in FIG. As described above, the second transfer material was obtained.

Since the first, second and third metal layers are made of the same copper, not only the second and third metal layers but also the first metal layers are partially cut by a single chemical etching, so that the wiring pattern of the surface layer of the first metal layer Portions other than this could be formed into recesses. In addition, similarly to Example 1, the film thickness can be arbitrarily controlled by the etching process to the surface layer of the 1st metal layer which is a carrier layer, and the 3rd metal layer being formed by the additive method. In addition, in a present Example, a peeling layer is not limited to a plating layer, It may be a very thin adhesive bond layer or an adhesive layer comprised from an organic layer.

In the second transfer material produced as described above, the release layer 502 connecting the first metal layer 501 and the metal layer 503 · 505 for wiring pattern formation is excellent in chemical resistance even when the adhesive force itself is weak. Even if the whole laminated body of the four-layered structure shown in (d) was etched, the interlayer did not peel and the wiring pattern could be formed without a problem.

Meanwhile, the adhesive strength of the first metal layer 501 and the second metal layer 503 through the release layer 502 was 30 gf / cm, which was excellent in peelability. Accordingly, using the second transfer material, the second metal layer 503 and the third metal layer 505 as wiring layers are transferred to the sheet-like substrate (substrate material), and then the second metal layer 503 and the release layer ( It can peel easily between 502, and can leave only the said wiring layer on a board | substrate. At this time, the peeling layer 502 which consists of a plating layer remained as it adhered to the 1st metal layer 501 side which is a carrier at the time of peeling.

In addition, the second transfer member according to the present embodiment manufactured as shown in Fig. 5E is pressed against a sheet-like base material (substrate material) containing a thermosetting resin in an uncured state, and thermally cured. The wiring layer (the second metal layer 503 and the third metal layer 505) can also be transferred to the substrate by removing the first metal layer by chemical etching later. By controlling the etching time, the substrate surface including the wiring layer can be made flat or the wiring layer can be concave with respect to the substrate surface.

In the present Example, similarly to Example 1, since the carrier layer was made of 35 μm copper foil, even if the substrate deformed during transfer, the carrier layer could withstand the strain stress. On the other hand, in the second transfer material according to the present embodiment, the recessed portion of the first metal layer serving as the carrier layer is secured to about 5 占 퐉 deep. Thereby, when this transfer material is crimped | bonded to a sheet-like base material, the base material of the part in which the wiring layer was filled is easy to flow in from the said recessed part, and the strain stress of the horizontal direction to deform a pattern can further be suppressed.

Therefore, the pattern deformation in the case of using the transfer material of this example was only 0.08% of the amount of curing shrinkage of the substrate. From this, it was etched to the surface layer part of the 1st metal layer which is a carrier layer, and the effect which forms the said wiring layer part in convex shape, and the parts other than the said pattern in concave shape was confirmed. Moreover, when the wiring resistance after transfer was measured, compared with Example 1, as long as the thickness of a wiring layer was increased in a 3rd metal layer, wiring cross-sectional area was taken large and the resistance value could be reduced by about 2-3.

In addition, in the present embodiment, as shown in Fig. 5 (e), after performing the chemical metal etching until the patterning of the first metal layer, the substrate is transferred, but the substrate is cured by using a transfer forming material that has not undergone this chemical etching. You may transfer while making it transfer. However, in this case, the wiring pattern which consists only of a 3rd metal layer is formed by peeling a peeling layer and a 1st metal layer after transfer, and removing a 2nd metal layer by soft etching etc.

Moreover, also in this Example, carrier copper foil (1st metal foil) which has a convex part wiring pattern can be reused after transfer. Moreover, since the wiring pattern transferred to the board | substrate using the transfer material of a present Example forms a recessed part with respect to the board | substrate surface, positioning is possible using this recessed part, and there also exists an advantage that flip chip mounting of a bare chip becomes easy. .

(Example 3)

The transfer material according to the present embodiment is another example of the second transfer material of the present invention. Although the structure of the wiring layer differs from the transfer material of Example 2 in the transfer material which concerns on a present Example, since drawing is common, it demonstrates using FIG. 5 (a)-(e) used in Example 2. As shown in FIG.

First, an electrolytic copper foil having a thickness of 35 μm was prepared as the first metal layer 501. The copper salt raw material was melt | dissolved in the alkaline bath, it was electrodeposited to the rotating drum so that it might become high current density, the metal layer (copper layer) was produced, and this copper layer was continuously rolled up and the electrolytic copper foil was produced.

Next, a release layer 502 composed of a nickel plating layer having a thickness of 100 nm or less was formed on the surface of the first metal layer 501. The electrolytic copper foil similar to the said 1st metal layer 501 was laminated | stacked so that it might be set to thickness 3nm as the 2nd metal layer 503 for wiring pattern formation on it. Thereby, the laminated body used as the three-layered structure of the 1st metal layer 501, the peeling layer 502, and the 2nd metal layer 503 was produced.

The roughening process was performed so that the center line average roughness Ra of the surface might be about 3 micrometers. Moreover, the said roughening process was performed by depositing fine grains of copper in the said electrolytic copper foil. Then, the same adhesive as Example 2 was apply | coated and the dry film resist (DFR) 504 used for the photolithographic method was stuck. This DFR 504 has plating resistance and functions as a plating resist. As a result, a laminate having a four-layer structure as shown in Fig. 5A was produced.

Next, as shown in FIG. 5B, after the DFR 504 of the wiring pattern portion is exposed, development is performed to form a second metal layer 503 in a region corresponding to the wiring pattern in the DFR 504. The recessed part which formed was formed. The depth of this recess was 25 nm. Thereafter, as shown in Fig. 5C, a third metal layer 505 made of a copper plating layer having a thickness of 20 nm was formed by the electrolytic copper plating method. Next, as shown in FIG.5 (d), it dipped in the stripping liquid and removed DFR (504).

Finally, as shown in FIG.5 (e), patterning was performed by the chemical etching method which immerses in ferric chloride aqueous solution. Unlike the second embodiment, since the gold plating layer 505 functions as an etching resist in the present etching step, the thin second metal layer 503 having a thickness of 3 µm and the release layer 502 which is a thin plating layer are selectively removed. can do. As a result, since the transfer material in which gold plating is performed on the outermost surface layer can be obtained, there is no fear that the surface of the wiring layer will be oxidized. Thereby, after forming a wiring pattern on a board | substrate using this transfer material, when a bare chip or a component is mounted on the said wiring pattern, connection with low resistance can be obtained.

In addition, for comparison, the wiring pattern as shown in Fig. 1 was subjected to gold plating on the entire surface of the transfer material composed of one layer of copper foil wiring, thereby producing a transfer material with gold plating and testing the transfer to the substrate. The transferability of the wiring pattern is damaged. Thereby, the effectiveness of the transfer material which concerns on this Example in which the gold plating layer was formed only in the surface layer of a wiring pattern was confirmed.

(Example 4)

As shown to Fig.6 (a)-(e), the 3rd transfer material of this invention was produced. This third transfer material is different in structure from the second transfer material of the present invention according to the second or third embodiment, and the wiring layer.

First, as shown in FIG. 6A, a laminate having a four-layer structure of a first metal layer 601, a peeling layer 602, a second metal layer 603, and a dry film resist (DFR) 604 is formed. To make. Since the structure and manufacturing method of this laminated body are the same as that of the laminated body shown in FIG. 4 (c) in Example 1, description is abbreviate | omitted.

Next, as shown in Fig. 6B, after exposing a region 607 other than the region corresponding to the wiring pattern in the DFR 604, development is performed, and the thickness of the DFR 604 is formed in the wiring pattern region. The recessed part 608 by 25 micrometers was formed. Thereafter, as shown in Fig. 6 (c), after depositing about 2 m by the electroless copper plating method, a copper plating layer (third metal layer) 605 having a thickness of 15 m was formed by the electrolytic copper plating method. In the present Example, the silver plating layer (4th metal layer 606) by electrolytic silver plating method was further deposited about 3 micrometers.

Next, similarly to Example 2, as shown in Fig. 6 (d), DFR was removed by immersing in the stripping solution. Finally, as shown in Fig. 6E, patterning was performed by a chemical etching method deposited in an aqueous ferric chloride solution. This etching is basically performed to remove the second metal layer 603 having a thickness of 3 µm, but since the fourth metal layer 606 serving as the silver plating layer functions as an etching mask, the third metal layer 605 and Since the fourth metal layer 606 is basically etched by removing some side etching, its thickness is maintained. This etching is performed until the surface layer portions of the release layer 602 and the first metal layer 601 are eroded.

Also in this embodiment, the etching for patterning the second metal layer 603 or the like is sufficient for a short time. In this manner, a third transfer material in which regions other than the wiring pattern in the surface layer portion of the first metal layer 601 were formed in a concave shape was obtained. In addition, by adjusting the etching time, the depth of the concave portion of the first metal layer 601 can be controlled arbitrarily.

Since the first, second and third metal layers are made of the same copper, part of the first metal layer is also eroded at the same time as the wiring layer (the second and third metal layers) by a single chemical etching, and the surface layer of the first metal layer Portions other than the wiring pattern could be formed in a concave shape. The third transfer material according to the present embodiment is etched to the first metal layer, which is the carrier layer, similarly to the first embodiment. Moreover, the 4th metal layer (silver plating layer) different from the 2nd and 3rd metal layers (copper plating layer) which are wiring layers is formed by the additive method.

In the third transfer material thus produced, the release layer 602 adhering the first metal layer 601 as the carrier layer, the second metal layer 603, the third metal layer 605, and the fourth metal layer 606 as the wiring layer. This adhesive strength itself is excellent even in chemical resistance. Thereby, even if etching is performed to the whole laminated body of 5 layer structure shown to Fig.6 (d), only the 2nd metal layer 603 can be removed effectively, and the interlayer of the said laminated body does not peel off, but a transfer material Can be formed. Moreover, the adhesive strength through the peeling layer 602 of the said 1st metal layer 601 and the 2nd metal layer 603 was 40 gf / cm, and was excellent in peelability.

Using such a third transfer material, a wiring pattern having a three-layer structure composed of the second metal layer 603, the third metal layer 605, and the fourth metal layer 606 was transferred to a sheet-like substrate (substrate material). As a result, the adhesion surface (peel-off layer 602) between the 1st metal layer 601 and the 2nd metal layer 603 peeled easily, and the wiring pattern of the said 3-layer structure could be transferred to the said base material.

In the present Example, since the carrier layer was comprised from 35 micrometers copper foil similarly to Example 1, even if a base material deform | transformed at the time of transfer, the carrier layer could bear the strain stress. On the other hand, in the transfer material of the present embodiment, the recessed portion of the first metal layer serving as the carrier layer is secured to about 10 mu m deep. Thereby, when this transfer material is crimped | bonded to a sheet-like base material, the base material of the part in which the wiring pattern was filled easily flows in from the said recessed part, and the strain stress of the horizontal direction to deform a pattern can further be suppressed.

Therefore, the pattern deformation in the present Example was only 0.07% of the amount of curing shrinkage of the substrate, similarly to the second example. From this to the 1st metal layer which is a carrier layer, the effect made into the uneven | corrugated shape along a wiring pattern was confirmed. When the wiring resistance after transfer is measured, the thickness of the wiring layer is increased by providing the third and fourth metal layers as compared with Example 1, whereby the wiring cross-sectional area is increased and the resistance value is reduced by 2-3. Could.

In the present embodiment, since the outermost layer in contact with the substrate in the wiring layer is the silver plating layer, as shown in the following Example 5, the connectivity with the conductive via paste provided on the substrate could be more stabilized.

Moreover, also when the wiring pattern is formed in the board | substrate using the transcription | transfer material of a present Example, it is the same as each Example mentioned above that a concave wiring pattern contributes to alignment of flip chip mounting. Moreover, of course, the pattern copper foil (1st metal layer) in which the convex part corresponding to the wiring pattern was formed can be reused after transfer.

(Example 5)

Using the third transfer material produced in Example 4, a composite wiring board was produced as shown in Figs. 7A to 7C. 7 (a) to 7 (c), the metal layer 701 corresponds to the fourth metal layer 606 of the third transfer material according to the fourth embodiment, so that the metal layer 702 is the third metal layer of the third transfer material ( 605, the metal layer 703 is the second metal layer 603 of the third transfer material, the release layer 704 is the release layer 602 of the third transfer material, and the metal layer 705 is the first metal layer of the third transfer material. Correspond to 601, respectively.

First, the board | substrate which transfers a wiring pattern was prepared. This board | substrate was produced by preparing the sheet-like base material 706 which consists of a composite material shown below, has a via hole here, and fills the said via hole with the electrically conductive paste 707. Below, the component composition of the said sheet-like base material 706 is shown.

(Component Composition of Sheet-Based Base Material 706)

90% by weight of Al ₂ O ₃ (AS-40: particle size 12㎛)

9.5% by weight of liquid epoxy resin (EF-450, Nippon Lek Co., Ltd.)

0.2% by weight of carbon black

0.3 wt% of coupling agent (Ajinomi Co., Titanate type: 46B)

Each said component was weighed out to the said composition, and the methyl ethyl ketone solvent was added to these mixture as a viscosity adjusting solvent until the slurry viscosity of the said mixture became about 20 Pa.s. Then, an aluminum gemstone was added thereto, and the mixture was rotated and mixed under conditions of a speed of 500 rpm for 48 hours in a pot to prepare a slurry.

Next, a 75-micrometer-thick PET film was prepared as a release film, and on this PET film, a film was formed with a gap of about 0.7 mm by the doctor blade method using the slurry to prepare a film forming sheet. By leaving the film sheet at a temperature of 100 ° C. for 1 hour, the methyl ethyl ketone solvent in the sheet was volatilized, the PET film was removed, and a sheet-like base material 706 having a thickness of 350 μm was produced. Since the said solvent was removed at the temperature of 100 degreeC, the said epoxy resin remains uncured, and the said sheet-like base material 706 has flexibility.

The sheet-like base material 706 is cut into a predetermined size using its flexibility, and a through hole having a diameter of 0.15 mm at a position where the pitch is equally spaced between 0.2 mm and 2 mm using a carbon dioxide laser. Beer hall). And the through hole was filled with the via-hole conductive paste 707 by the screen printing method, and the said board | substrate was produced. The said electrically conductive paste 707 prepared the following materials so that it may have the following compositions, and knead | mixed by three rolls.                     

(Component Composition of Conductive Paste 707)

85% by weight of spherical copper particles (particle diameter: 2 μm)

Bisphenol A epoxy resin (Epicoat 828, Shell Epoxy Co., Ltd.) 3 wt%

9% by weight of glycidyl ester epoxy resin (YD-171)

Amine adduct hardener (Ajinomi Co., MY-24) 3% by weight

Next, as shown in Fig. 7A, the sheet-like base material 706 is disposed on both surfaces so that the fourth metal layer 701 side of the third transfer material shown in the fourth embodiment is in contact with each other. The press was heated and pressurized at the press temperature of 120 degreeC and the pressure of about 9.8x10 <^5> Pa (10kgf / cm <2>) for 5 minutes. By this heat-pressing treatment, the epoxy resin in the sheet-like base material 706 and the conductive paste 707 is softened by melting, and as shown in Fig. 7B, the second, third and fourth metal layers ( The wiring layer which consists of 703, 702, and 701 was embedded in the sheet-like base material 706.

And the heating temperature was further raised and the said epoxy resin was hardened | cured by processing at the temperature of 175 degreeC for 60 minutes. As a result, the sheet-like base material 706 and the second, third and fourth metal layers 703, 702, and 701 are firmly bonded to each other, and the conductive paste 707 and the fourth metal layer 701 are firmly adhered to each other. Electrically connected (inner via connection), it adhere | attached firmly.

By peeling together the 1st metal layer 705 which is the said carrier layer, and the peeling layer 704 from such a laminated body shown in FIG. 7 (b), it is possible to provide both surfaces as shown in FIG. 7 (c). 2. A wiring board on which the third and fourth metal layers 703, 702, and 701 were transferred was obtained. This wiring board is called a wiring board 7A. In the wiring board 7A, a recess corresponding to the depth of the recess formed by etching is formed in the surface layer of the first metal layer 705, and the second, third and fourth metal layers 703, 702, 701 were formed.

In addition to the wiring board 7A produced in the present embodiment, a wiring board (called a wiring board 7B) was also produced by transferring the wiring pattern using the first transfer material described in the first embodiment. And these wiring boards 7A and 7B were evaluated for reliability by the solder reflow test and the temperature cycle test. Each test method is shown below.

Solder Reflow Test

The maximum temperature was set to 260 degreeC using the belt-type reflow apparatus (made by Matsushita Denki Sangyo Co., Ltd.), and the process for 10 second at the said temperature was performed 10 times.

(Temperature Cycle Test)

The high temperature side was set to 125 degreeC and the low temperature side to -60 degreeC, and 200 cycles of operation to hold | maintain for 30 minutes at each temperature were performed.

 As a result, neither of the wiring boards 7A and 7B exhibited a crack even in the shape even after each test, and no abnormality was observed in the ultrasonic damage detection device. In addition, the initial resistance of the inner via connection resistance by the conductive resin paste 707 was almost the same.

However, although there was almost no change with the initial performance before each test mentioned above, the change rate of the wiring board 7B was 10% or less, while the change rate of the wiring board 7A was 5% or less. Although the via connection of any wiring board can obtain sufficient stability, more stable via connection can be realized in the wiring board 7A in which the Ag plating layer exists in the connection portion of the wiring layer and the conductive resin paste.

(Example 6)

The ceramic wiring board as shown in FIG. 8 was produced using the transfer material produced in the said Example 1.

First, the board | substrate which transfers a wiring pattern was prepared. This substrate was produced by preparing a low-temperature calcined ceramic green sheet 805 containing a low-temperature calcined ceramic material and an organic binder, providing a via hole therein, and filling the via hole with a conductive paste 806. The component composition of the green sheet 805 is shown below. (Component composition of the green sheet 805)

88% by weight of a mixture of ceramic powder Al ₂ O ₃ and lead borosilicate glass (MLS-1000)

10% by weight of methacrylic acid acrylic binder (Olycox 7025)

2% by weight of BBP

Each said component was weighed out to the said composition, and toluene solvent was added to these mixture as a solvent for viscosity adjustment until the slurry clay of the said mixture became about 20 Pa.s. Then, an aluminum gemstone was added thereto, and the mixture was rotated and mixed under conditions of a speed of 500 rpm for 48 hours in a pot to prepare a slurry.

Next, a polyphenylene sulfide (PPS) film having a thickness of 75 µm was prepared as a release film, and on this PPS film, a film was formed with a gap of about 0.4 mm by the doctor blade method using the slurry, and a film forming sheet Made. The said toluene solvent in the said sheet was volatilized, the said PPS film was removed, and the green sheet 805 of thickness 200micrometer was produced. Since this plastic sheet BBP is added to the said methacrylic acid type acrylic binder which is an organic binder, this green sheet 805 had flexibility and favorable thermal decomposition property.

This green sheet 805 is cut into a predetermined size using its flexibility, and a punching machine uses a punching machine and has a through hole having a diameter of 0.15 mm at a position where the pitch is 0.2 mm to 2 mm. ) Installed. And the through hole was filled with the via-hole conductive paste 806 by the screen printing method, and the said board | substrate was produced. The said electrically conductive paste 806 prepared the following materials so that it may have the following compositions, and knead | mixed by three rolls.

(Conductive Paste 806)

75% by weight of spherical copper particles (particle diameter: 32 μm)

5% by weight of acrylic resin (polymerization degree: 100 cps)

3% by weight of borosilicate glass

12% by weight of tapineol

5% by weight of BBP

Next, on both sides of the substrate, the second alloy layer (wiring layer) side of the first transfer material shown in Example 1 was placed in contact with each other, and the press temperature was 70 ° C. and the pressure was about 5.88 × 10 using a hot press. Heat pressurization was performed at ⁶ Pa (60 kgf / cm 2) for 5 minutes. The acrylic resin in the said board | substrate melt-softened by this heat pressurization process, and the part (concave part) of the 2nd metal layer (wiring layer), the peeling layer, and the 1st metal layer (carrier) of the said 1st transfer material was buried in the said board | substrate. .

After cooling such a laminate, only the second metal layer remains by peeling the first metal layer and the peeling layer, which are the carriers, from the laminate, as shown in FIG. A wiring board 800 having a wiring layer 801 made of a metal layer was formed.

And the aluminum green sheet which does not sinter at the baking temperature was laminated | stacked on both surfaces of this wiring board, and it fixed by debindering and baking in nitrogen atmosphere. First, in order to remove the organic binder in the said green sheet 805, it heated in nitrogen to 700 degreeC at the temperature increase rate of 25 degree-C / hour using an electric furnace, and processed at the temperature of 700 degreeC for 2 hours. Then, firing was performed by treating the wiring board on which the debinding treatment was completed in 900 占 폚 for 20 minutes using a belt furnace. This condition was made into 20 minutes of temperature rise, 20 minutes of temperature fall, and 60 minutes of inout total. After baking, the aluminum green sheet could be easily removed. As a result, a low temperature fired ceramic wiring board 800 was manufactured.

On both sides of the wiring board 800, a recess having a depth corresponding to the thickness of the unevenness of the first metal layer of the first transfer material is formed, and a wiring layer 801 made of the second metal layer is formed at the bottom of the recess. It became. The wiring layers 801 on both sides of the wiring board 800 were electrically connected in the thickness direction by conductive metal sinter vias formed by sintering the conductive paste 806. In this embodiment, as shown in Fig. 8, the gold plating layer 802 is formed on the second metal layer 801 of the wiring board 805.

Next, a configuration in which the bare chip semiconductor 905 is flip-chip mounted on the surface of the low temperature calcined ceramic wiring board 800 will be described. FIG. 9 is a cross-sectional view showing an example of a configuration schematic in which the bare chip semiconductor 905 is mounted on the ceramic wiring board 800.

In addition, a bump bump 903 is formed on the aluminum pad 904 on the surface of the bare chip semiconductor 905 by wire bonding, and a thermosetting conductive adhesive (not shown) is formed on the bump 903. Not warrior). Then, by positioning the protrusion bump 903 in the recess (wiring pattern portion) of the surface of the ceramic wiring board 800, and attaching the protrusion bump 903 to the gold plated layer 802 through the conductive adhesive, The semiconductor 905 was mounted. As a result, as described above, in the concave portion formed by transferring the second metal layer (wiring layer 801) using the first transfer material, the bump 903, the wiring layer (second metal layer 801, and gold plating). Layer 802 is connected.

About this flip chip mounting board | substrate, reliability was evaluated by the solder reflow test and the temperature cycle test. Each said test was performed on the conditions similar to the said Example 4. As a result, the ceramic wiring board 800 in which the semiconductor 905 was flip-chip mounted was stabilized with little change in the bump connection resistance even after each of the above processes.

Also, in the second transfer material shown in FIG. 2 in the present embodiment, transfer was performed using a transfer material composed of an Ag plating layer and a third metal layer composed of an Ag pattern plating layer. Ag-plated wiring patterns could be formed in the ceramic green sheet 805. In this case, since it becomes possible to remove | debinder in air and baking in air in a manufacturing process, it is advantageous in terms of cost. In addition, the oxidation resistance of the wiring is remarkably improved.

(Example 7)

A multilayer wiring board was fabricated using a transfer material and a substrate made of a composite material produced in the same manner as in Example 5. 10 is a cross-sectional view showing an example of the outline of the manufacturing process of the multilayer wiring board.

10 (a) to (j), 1001a, 1001b, and 1001c are substrate sheets, 1002a, 1002b, and 1002c are carrier first metal layers, 1003a, 1003b, and 1003c are conductive pastes, 1004a, 1004b, and 1004c are wiring patterns. The second metal layers, 1005a, 1005b, and 1005c, are peeling layers, A, B, C, and D are transfer materials, and E is a multilayer wiring substrate, respectively.

10 (a) to 10 (i), FIG. 10 (a) (d) (g) show a step of producing a single-layer wiring board using the transfer material A and the substrate 1001a. Similarly, FIGS. 10B and 10H show a process of manufacturing a single-layer wiring board using the transfer material B and the substrate 1001b, and FIGS. The steps of producing a single-layer wiring board using the materials (C) and (D) and the substrate 1001c are shown. Fig. 10 (j) shows a multilayer wiring board E produced by laminating the three types of single layer wiring boards. In addition, unless otherwise shown, each said single layer wiring board was produced by the method similar to Example 5.

First, transfer materials A, B, C, and D as shown in Figs. 10A, 10B, and 10C were produced, respectively. First, the electrolytic copper foil of 35 micrometers in thickness was produced as the 1st metal layer 1002a, 1002b, 1002c, 1002d by the foil manufacturing method similar to the said Example 1.

Next, on the rough surfaces of the first metal layers 1002a, 1002b, 1002c, and 1002d, peeling layers 1005a, 1005b, 1005c, and 100d made of Ni-P alloy plating layers were formed thin so as to have a thickness of 100 nm or less. As the second metal layers 1004a, 1004b, 1004c, and 1004d for wiring pattern formation thereon, three-layer laminates were produced by laminating an electrolytic copper foil having a thickness of 9 µm by the same electrolytic plating method as in Example 1 above. . Moreover, you may use a chromium plating layer as said peeling layer.

Subsequently, etching is performed from the second metal layers 1004b and 1004c for forming the wiring pattern using a basic copper chloride aqueous solution capable of etching away only copper, and the second metal layers 1004b and 1004c are optionally etched. It formed in the wiring pattern, and obtained transfer materials (B, C) shown to FIG. 10 (b) (c). Similarly, copper and Ni-P alloy plating layers are etched from the second metal layers 1004a and 1004d for wiring pattern formation by chemical etching to form the second metal layers 1004a and 1004d in an arbitrary wiring pattern. At the same time, irregularities along the wiring pattern were formed in the surface layer portions of the first metal layers 1002a and 1002d. The convex portion corresponds to the wiring pattern region, and the concave portion corresponds to regions other than the wiring pattern. This obtained the transfer materials A and D shown to FIG. 10 (a) (d).                     

Next, as shown in FIGS. 10A, 10B, and 10C, the transfer material A, B, C, D is formed on the substrate sheets 1001a, 1001b, and 1001c. 2 metal layers 1004a, 1004b, 1004c, and 1004d were arrange | positioned, respectively. In addition, in FIG.10 (c), the transfer materials C and D were arrange | positioned on both surfaces of the board | substrate sheet 1001c, respectively.

As shown in Figs. 10 (d), 10 (e) and 10 (f), the laminate of the transfer materials A, B, C, and D and the substrates 1001a, 1001b, and 1001c is subjected to a temperature of 100 ° C. Heat-pressurizing at a pressure of about 9.8 × 10 ⁵ Pa (10 kgf / cm 2) for 5 minutes to melt-soften the epoxy resin in the substrate sheets 1001a, 1001b, and 1001c to form second metal layers 1004a, 1004b, 1004c, 1004d) is filled in the substrate sheets 1001a, 1001b, and 1001c, respectively.

Next, the first metal layers 1002a, 1002b, 1002c, and 1002d are peeled off from the laminate together with the release layers 1005a, 1005b, 1005c, and 100d to thereby release the second metal layers 1004a, 1004b, 1004c, and 1004d. ) Remains on the substrate sheets 1001a, 1001b, 1001c. As a result, the single-layer wiring board having a flat surface (Fig. 10 (h)), the single-layer wiring board having a concave shape of the wiring layer portion (see Fig. 10 (g)), and the surface of one surface are flat and the wiring of the other surface is Three types of single-layered wiring boards of single-layered wiring boards having a concave shape (see Fig. 10 (i)) were obtained.

Finally, as shown in Fig. 10 (j), the three types of single layer wiring boards were stacked and heat-treated by heating and pressing them at a temperature of 175 ° C. and a pressure of about 7.84 × 10 ⁶ Pa (80 kgf / cm 2) for 1 hour. Curing shrinkage was performed to obtain a multilayer wiring board (E). By this treatment, the epoxy resins in the substrate sheets 1001a, 1001b and 1001c and the conductive pastes 1003a, 1003b and 1003c are cured to maintain the mechanical strength of the multilayer wiring substrate E. In addition, the second metal layers 1004a, 1004b, 1004c, and 1004d were electrically connected to each other by the conductive resin vias 1003a, 1003b, and 1003c. As described above, the multilayer wiring substrate E was subjected to thermal curing shrinkage after being overlapped with the single layer wiring substrate, so that the deviation of the vias in the via on via structure did not occur completely.

The multilayer wiring board (E) manufactured by this method was able to form a fine wiring pattern with a line width of about 50 mu m and has an IVH structure, and thus was useful as a very small and high-density mounting wiring board. In particular, by transferring the wiring pattern using the transfer material according to the present invention, since the wiring position shift of the surface layer surface where the fine wiring pattern is concentrated does not occur, the yield can be improved.

Moreover, since the mounting wiring layer of the surface layer which mounts a chip | tip etc. is concave shape, flip chip mounting could be performed easily. In addition, the multilayer wiring board of this invention is not limited to the said structure, For example, you may use the single-layer wiring board which has the wiring layer which has the above-mentioned recessed part also in the inner layer. Also in the multilayer board in this case, low resistance, high reliability via connection is confirmed.

Moreover, when a 2nd metal layer is copper foil, you may form a gold plating layer for the purpose of oxidation prevention in the upper layer part. In this case, if the surface of the gold plated layer also has a recessed portion with respect to the substrate surface, the creepage distance can be ensured even in a fine wiring pattern, which is also advantageous in the sense of preventing migration.                     

In addition, although a composite substrate is used in this embodiment, the base material is not limited to this at all, A ceramic green sheet can also be used. In this case, if only the firing step of the manufacturing step described in this embodiment is changed, the multilayer wiring board can be realized by the same manufacturing step.

In the present embodiment, the first transfer material made of a single metal layer is used as the transfer material, but when the second or third transfer material is used, a multilayer wiring board having a wiring layer made of a plurality of metal layers can be realized. have.

(Example 8)

Using the first transfer material described in the first embodiment, a multilayer wiring substrate formed by laminating a ceramic substrate and a substrate containing at least a thermosetting resin was produced.

First, as a material of the ceramic wiring board 1608 (see Fig. 16B), a sheet-like base material on which a wiring pattern was transferred was prepared. This sheet-like substrate was prepared by preparing a low-temperature calcined ceramic green sheet containing a low-temperature calcined ceramic material and an organic binder, providing a via hole therein and filling the via hole with a conductive paste 1609. Below, the component composition of the said green sheet is shown.

(Component composition of the green sheet)

88% by weight of a mixture of ceramic powder Al ₂ O ₃ and lead borosilicate glass (MLS-1000)

10% by weight of methacrylic acid acrylic binder (Olycox 7025)                     

2% by weight of BBP

Each said component was weighed out to the said composition, and toluene solvent was added to these mixture as a solvent for viscosity adjustment until the slurry viscosity of the said mixture became about 20 Pa.s. Then, an aluminum gemstone was added thereto, and the mixture was rotated and mixed under conditions of a speed of 500 rpm for 48 hours in a pot to prepare a slurry.

Next, a polyphenylene sulfide (PPS) film having a thickness of 75 µm was prepared as a release film, and on this PPS film, a film was formed with a gap of about 0.4 mm by the doctor blade method using the slurry, and a film forming sheet Made. The toluene solvent in the sheet was volatilized to remove the PPS film, thereby producing a green sheet having a thickness of 220 µm. Since this plastic sheet added plasticizer BBP to the said methacrylic acid type acrylic binder which is an organic binder, it had flexibility and favorable thermal decomposition property.

This green sheet is cut into a predetermined size using its flexibility, and a through hole (empty hole) having a diameter of 0.15 mm is provided at a position where the pitch is equally spaced between 0.2 mm and 2 mm using a punching machine. did. And the through hole was filled with the via-hole filling conductive paste 1609 by the screen printing method, and the said sheet-like board | substrate was produced. The said electrically conductive paste 1609 prepared the following materials so that it may have the following compositions, and knead | mixed with three rolls.

(Component Composition of Conductive Paste 1609)

75% by weight of spherical silver particles (particle diameter: 3 μm)

5% by weight of acrylic resin (polymerization degree: 100 cps)                     

15% by weight of tapineol

5% by weight of BBP

Next, on both surfaces of the sheet-like base material, the first transfer material described in the first embodiment is disposed so that the second metal layer side is in contact with each other, and the press temperature is 70 ° C. and the pressure is about 5.88 × 10 using a hot press. Heat pressurization was performed at ⁶ Pa (60 kgf / cm 2) for 5 minutes. By this heating and pressing treatment, the acrylic resin in the sheet-like substrate is melted and softened, and the surface layer portion (convex portion) of the wiring layer (second metal layer), the peeling layer and the carrier (first metal layer) of the first transfer material is the sheet-like substrate. Sunk in the middle.

After cooling such a laminate, by peeling the carrier of the first transfer material together with the release layer from the laminate, only the second metal layer remains, and as shown in FIG. A ceramic wiring board 1608 having a wiring layer 1610 composed of two metal layers was obtained.

The aluminum green sheet not sintered at the firing temperature was laminated on both surfaces of the ceramic wiring board 1608, and fixed by debindering and firing in a nitrogen atmosphere. First, in order to remove the organic binder in the said ceramic wiring board 1608, it heated in nitrogen to 700 degreeC at the temperature increase rate of 25 degree-C / hour using an electric furnace, and processed at 700 degreeC for 2 hours. Then, firing was performed by treating the ceramic wiring board 1608 on which the debinding process was completed with 900 ° C. for 20 minutes in nitrogen using a belt furnace. This condition was made into 20 minutes of rising temperature, 20 minutes of falling temperature, and 60 minutes of inout total. After baking, the aluminum layer could be easily removed.

As shown in Fig. 16 (b), as shown in Fig. 16 (a) to Fig. 16 (c), the composite wiring board 1608 manufactured by the method described above is sandwiched. The wiring boards 1605, 1606, and 1607 were laminated to obtain a laminate in which all layers were connected between layers.

Here, a manufacturing method of the composite wiring board 1605 and the like will be described. As shown in the uppermost portions of Figs. 16A and 16B, the wiring pattern formed on the first transfer material by using the first transfer material 1601 (same as Example 1) according to the present invention. Is transferred to an uncured composite sheet (composition as in Example 5) 1602, thereby producing a single-layer wiring board 1605 having a wiring pattern 1604. A through hole is formed in the composite sheet 1602 and the conductive paste 1603 is filled. In the same manner, single-layer wiring boards 1606 and 1607 using the composite sheet 1602 are fabricated.

Thereafter, the composite single-layered wiring boards 1605 through 1607 were laminated on both surfaces of the ceramic wiring board 1608 and heat-pressed for 60 minutes at a press temperature of 200 ° C. and a pressure of 2.94 × 10 ⁵ Pa (30 kgf / cm 2). Processed. By this heat-pressing treatment, the acrylic resin in the composite sheet 1602 of the single-layered wiring boards 1605-1607 melt-softens, and as shown in Fig. 16 (c), the entire wiring including the ceramic layer 1608 is provided. The substrate was cured integrally.

By the same method as in the present embodiment, a multilayer wiring board made of a composite wiring board 1602 and a ceramic wiring board 1608 as shown in FIG. 11 or 12 was produced. This configuration is the same as the multilayer wiring board shown in FIG.

As a result of observing the multilayered wiring substrates shown in Figs. 11 and 12 produced by the method of this embodiment using X-rays, no damage points such as cracks in the ceramic layer were found at all.

In addition, as a result of evaluating the via soft resistance of the multilayer wiring board, the via connection of low resistance could be confirmed.

As shown in Fig. 11, a high capacitance value of 10 to 500 nF / cm &lt; 2 &gt; is easily realized by using a Ba-Ti-O-based ceramic as a capacitor layer without forming an inner via on the ceramic wiring board 1608. Can be.

In addition, the inner layer electrode layer shown in FIG. 11 may be formed in the resin substrate layer 1602 or may be formed in the ceramic layer 1608.

In the present embodiment, the first transfer material is used to form the wiring layer of each single-layer wiring board. However, when the second or third transfer material is used, a multilayer wiring board having a wiring layer composed of a plurality of metal layers can be produced. .

(Example 9)

Although the structure is almost the same as that of Example 8, the multilayer wiring board in the case where the ceramic wiring board constituting the ceramic layer is made of a material such as Al ₂ O ₃ which is sintered only at high temperature is shown in Figs. 17A to 17C. Produced as

The multilayer wiring board according to the present embodiment is a multilayer wiring board comprising a substrate having high strength and high thermal conductivity and low resistance wiring such as copper foil, which cannot be realized in low temperature calcined ceramic.

First, the aluminum green sheet used as the material of a ceramic wiring board was prepared. Through holes were placed therein and fired before filling the conductive paste described later. In the firing step, since the position data of the through-hole is shared with a resin-based substrate (a composite wiring board) to be described later, a green sheet made of SiC which is not sintered at the firing temperature is laminated on both surfaces of the aluminum green sheet, and the binder is removed in an air atmosphere. And fixing was performed by firing. First, in order to remove the organic binder in the said aluminum green sheet, baking was performed by heating in nitrogen to 700 degreeC at the temperature increase rate of 25 degree-C / hour using an electric furnace, and processing at temperature 1600 degreeC for 2 hours. After firing, the SiC layer could be easily removed, and an Al ₂ O ₃ substrate 1708 sintered in a non-shrinkable state in the planar direction was obtained. In addition, although the non-shrinkage method using a restraint layer is used in the present Example, you may correct shrinkage and perform isotropic shrinkage sintering in a normal three-dimensional manner.

The via-cured thermosetting conductive paste 1704 was filled with a through hole having a diameter of 0.15 mm previously formed in the Al ₂ O ₃ substrate 1708 by screen printing. As the conductive paste 1704, one having the same composition as the conductive paste described in Example 8 was used.

As shown in Fig. 17B, wiring substrates 1705 to 1707 using the composite sheet 1702 are laminated to sandwich the Al ₂ O ₃ substrate 1708, and as shown in Fig. 17C. Similarly, a multilayer wiring board 1709 capable of realizing interlayer connection between layers was obtained.

Here, the manufacturing method of the wiring boards 1705-1707 using the composite sheet 1702 will be described. As shown in Fig. 17 (a), the first transfer member 1701 (same as in the eighth embodiment) of the present invention is crimped onto the composite sheet 1702 (the same as that of the eighth embodiment) in the uncured state. Let's do it.

In addition, through holes are formed in the composite sheet 1702, and a conductive paste 1704 such as a paste filled in the Al ₂ O ₃ substrate 1708 is filled. As the position data at the time of forming the through hole, the same data used in the formation of the through hole to the Al ₂ O ₃ substrate 1708 was used.

As in the eighth embodiment, by peeling the carrier of the first transfer material together with the release layer, only the wiring layer of the first transfer material remains in the composite sheet 1702. As a result, as shown at the top of Fig. 17B, a composite wiring board 1705 having a wiring layer 1703 is produced. In the same manner, a composite wiring board 1706 · 1707 is produced.

Thereafter, the composite wiring boards 1705 to 1707 were laminated on both sides of the Al ₂ O ₃ substrate 1708, and heated for 60 minutes at a press temperature of 200 ° C. and a pressure of about 2.94 × 10 ⁶ Pa (30 kgf / cm 2). Processed. By this heating and pressing process, the acrylic resin in the composite wiring boards 1705 to 1707 is softened by melting, and as shown in Fig. 17C, the entire wiring layer including the Al ₂ O ₃ substrate 1708 is cured. Integrally, the multilayer wiring board 1709 was produced. This configuration is the same as that of the multilayer wiring board shown in FIG.

As a result of observing the multilayered wiring boards shown in Figs. 17 (c) and 13 using X-rays, no damage points such as cracks were found in the Al ₂ O ₃ layer. In addition, since the Al ₂ O ₃ layer has a high mechanical strength, even if the press pressure is about 9.8 × 10 ⁶ Pa (100 kgf / cm 2), no damage such as cracking is observed, and the multilayer wiring board excellent in mechanical strength such as resistance strength. Could get

Further, as a result of evaluating the via resistance of the multilayer wiring board 1709, the copper foil wiring formed in the composite layer functions as a low resistance wiring formed in the Al ₂ O ₃ layer, whereby the via connection and wiring resistance with low resistance can be confirmed. there was. In addition, since the high thermal conductivity composite sheet was used as the resin substrate, the high thermal conductivity of about 6 W / m · K was realized.

In addition, although the inner via was formed using the same electrically conductive resin paste in a ceramic layer and a composite layer in a present Example, you may use a different thermosetting electrically conductive paste, respectively. The base material used for the ceramic layer also, Al ₂ O ₃ of not only a high thermal conductivity of AlN or no correlation with any of the low-temperature co-fired glass ceramic.

(Example 10)

In the present embodiment, as shown in FIG. 14, the multilayer wiring board according to the eighth embodiment or the ninth embodiment arranges the wiring board using the resin sheet on the surface layer and the ceramic wiring board on the inner layer. (1801), the resin sheet 1803, and the ceramic layer 1802 are laminated in this order. That is, the ceramic wiring board is arranged on the surface layer, and the wiring board using the resin sheet is arranged on the inner layer.

The multi-layered wiring board of the present embodiment has a low dielectric constant layer of glass ceramics such as Nd ₂ O ₅ , TiO _2, and SiO ₂ based ceramic layers 1801 and a low Al ₂ O ₃ layer and borosilicate glass formed on the ceramic layer 1802. By using the dielectric constant layer, heterogeneous lamination with different dielectric constants is realized through the resin sheet 1803.

However, the ceramic layer is not limited to such a combination, but a heterogeneous laminate such as a magnetic material such as ferrite and a Ba-Ti-O-based dielectric is also realized.

The advantages of the multilayer wiring board are as follows. First, in the case of directly stacking different types of ceramic layers, the combination may be difficult depending on the type of ceramic layer due to problems such as mutual diffusion and warpage. Regardless, it is possible to easily achieve heterogeneous lamination. Secondly, by interposing the resin sheet between the ceramic layers, the ceramic layer is not damaged during the lamination.

The multilayer wiring board of the present Example was produced as shown in FIG.                     

First, a glass ceramic green sheet 1801 of Nd ₂ O ₅ TiO ₂ SiO ₂ system and a green sheet 1802 (the same as in Example 8) composed of an Al ₂ O ₃ layer and borosilicate glass were prepared.

After the via holes were provided and the conductive paste 1803 (same as the eighth embodiment) was filled, as shown in Fig. 18A, the transfer materials 1804 and 1805 having the wiring patterns were double-sided. 18. The transfer material 1804, as shown in FIG. 18 (c), is formed by forming a laminated body while being aligned from each other, and peeling the carrier after heating and pressing at 80 ° C as shown in FIG. 18 (b). A wiring pattern of 1805 was transferred and formed on the green sheet 1801. In addition, the wiring pattern was also transferred to the green sheet 1802 in the same manner.

In addition, in this embodiment, since pin lamination is used for the alignment means when the laminate is produced, from 3 mm to 3.3 mm at predetermined positions of the green sheets 1801 and 1802. The through hole of was left open. Since the green sheets 1801 and 1802 share the positional data of these through holes with the resin substrate, it is necessary that the green sheets 1801 and 1802 do not cause shrinkage in the firing step. For this reason, the both surfaces of the multilayer body, laminating a green sheet consisting of Al ₂ O ₃ that does not sinter at the firing temperature to carry out a fixing by binder removal and fired in the air atmosphere. First, in order to remove the organic binder in the said green sheets 1801, 1802, it baked by nitrogen in 700 degreeC at the temperature increase rate of 25 degree-C / hour using an electric furnace, and baked by processing at 900 degreeC for 2 hours. . After firing, the Al ₂ O ₃ layer can be easily taken out, and the Nd ₂ O ₅ TiO ₂ SiO ₂ based substrate 1801 and the Al ₂ O ₃ group glass ceramic substrate sintered in a non-shrinkable state in the planar direction (1802) was obtained.

Next, as shown in Fig. 18 (d), the composite sheet 1807 filled with the conductive paste 1806 is disposed between the ceramic layers, that is, between the green sheets 1801 and 1802, and is positioned as a pin in advance. After fitting, heat press treatment was performed for 30 minutes at a press temperature of 170 ° C. and a pressure of about 7.84 × 10 ⁶ Pa (80 kgf / cm 2).

Here, in the case where the diameter of the positioning pin was set to 3 mm, some shrinkage was found in the via hole not filled with the paste, and it was difficult to pass the pin through a part of the via hole. However, in the via hole punched slightly larger than the shrinkage amount (around 3.0 mm to 3.3 mm), the pin can be penetrated without any problem. In such a case, the punching diameter may be left at 3 mm, and the pin diameter may be thinner than 3 mm.

In addition, the multi-layered wiring board (FIG. 18 (e)) integrated with the green sheet 1801 * 1802 which is the softening of the epoxy resin in the said composite sheet 1807 by the heat-pressing process at the time of lamination | stacking press, and integrated as a ceramic layer Obtained. This configuration is the same as that of FIG.

Moreover, although the wiring pattern is not formed in the composite sheet 1807 of this embodiment, you may transfer a wiring pattern in an uncured state depending on a case.

In addition, although the composite sheet which consists of an inorganic filler and an epoxy resin is used in this Example, it is not limited to this, The resin sheet which does not contain an inorganic filler, The prepreg containing glass fiber, It consists of aramid resin and a glass woven fabric. Any prepreg or the like may be used.                     

In this embodiment, the sintering method which is almost non-shrinkage is used in the planar direction. Of course, the shrinkage amount may be corrected and a three-dimensional isotropic sintering method may be used.

As a result of observing the multilayer wiring board shown in Fig. 18E, no damage spots such as cracks were found in the ceramic layer.

Moreover, the via connection resistance of this laminated body was evaluated, and the via connection which is low resistance could be confirmed. After the moisture absorption (85 ° C, 85Rh, 168hr) of the multilayer wiring board was passed through the reflow furnace at 230 ° C (JEDEC Level 1), compared with the via connection resistance when only the resin substrate was laminated, The via connection can be realized with very small resistance fluctuations. This is an effect due to the high hygroscopicity of the ceramic layer.

On the other hand, for example, as shown in FIG. 15, the resin layer 1807 is further laminated on both surfaces of the surface layer of the multilayer wiring substrate shown in FIG. 14 (or FIG. 18E) (ceramic layer and resin layer structure). Was the same as in the present example), and as a result of the drop test, it was confirmed that damage such as cracking was very unlikely compared with the configuration of the ceramic wiring board alone.

In addition, the base material used for the resin-based layer 1807 serving as the outermost surface layer need not be the composite sheet used in the inner layer, and can be selected according to the use such as glass epoxy.

Also from these results, according to the present embodiment, it was found that the substrate having both the advantages of the ceramic and the advantages of the resin system can be realized.

As described above, according to the present invention, there is provided a transfer material which can transfer a fine wiring pattern at low temperature without any pattern misalignment and can be transferred reliably and easily. Advantageous wiring boards can be realized.

Moreover, since the wiring layer is formed convexly from the transfer material, it is easy to compress IVH, and the via connection can be stabilized, which is advantageous.

In addition, since the transfer material of the present invention transfers only wiring patterns (second metal layer, etc.), it is possible to reuse the constituent material of the first metal layer serving as a carrier, thereby reducing the cost and being very useful industrially.

In the wiring board of the present invention, the wiring portion does not protrude from the board by using the transfer material of the present invention. This makes it possible to easily manufacture a multilayer wiring board in which a ceramic wiring board and a resin-based wiring board are laminated, which has been difficult to form by damage of the ceramic layer at the time of lamination using the wiring board of the present invention.

In each of the transfer materials in Examples 1 to 10, a circuit component such as an inductor, a capacitor, a resistor, or a semiconductor element may be formed so as to be electrically connected to the wiring pattern, and transferred to the substrate together with the wiring pattern. Moreover, it is preferable to form passive components, such as an inductor, a capacitor, and a resistor, on the transfer material by printing methods, such as screen printing.

(Embodiment 5)

In each of the above-described embodiments, the transfer materials (first to third transfer materials) used to transfer the wiring patterns to the substrate have been described. In the following embodiments, the wiring patterns and the circuits are used in other transfer materials according to the present invention. The transfer component wiring pattern forming material for simultaneously transferring components to a substrate will be described.

The outline of one Embodiment (henceforth a 4th transfer material) of the transfer component wiring pattern forming material which concerns on this invention is shown to sectional drawing of FIG. 19 (a) and FIG. 19 (b).

As shown in Fig. 19A, the transfer material 2001A as one embodiment of the fourth transfer material is a release carrier metal foil 2101 that is a first metal layer, and a wiring metal foil 2102 that is a second metal layer formed thereon. And a circuit component, i.e., an inductor 2103, a capacitor 2104 and a resistor 2105, were formed by a printing method so as to be electrically connected to the wiring metal foil 2101 on the transfer wiring pattern forming material formed in a two-layer structure. to be.

As shown in Fig. 19B, the transfer material 2001B as another form of the fourth transfer material is basically the same as the transfer material 2001A in Fig. 19A, but the inductor 2103, Not only passive components such as the capacitor 2104 and the resistor 2105, but also active components such as the semiconductor chip 2106 are flip chip-mounted at the connecting portion 2107 so as to connect with the wiring metal foil 2102.

After each of the transfer materials shown in FIGS. 19A and 19B is pressed onto a substrate, only the release carrier 2101 is peeled off to remove the release carrier 2101, that is, the metal foil 2102 for wiring and the inductor 2103. ), Active components such as the capacitor 2104 and the resistor 2105 and active components such as the semiconductor chip 2106 can be transferred to the substrate.

Embodiment 6

Next, FIG. 20 shows a configuration schematic of an embodiment of another transfer part wiring pattern forming material (hereinafter referred to as a fifth transfer material) of the present invention.                     

As shown in FIG. 20, the 5th transfer material 2002 is the metal foil for release carriers 2201 which is a 1st metal layer, the peeling layer 2202 formed on it, and the wiring metal foil which is a 2nd metal layer formed on it ( The inductor 2204, the condenser 2205, and the resistor 2206 were formed by the printing method so as to be electrically connected to the wiring metal foil 2203 on the transfer wiring pattern forming material formed in the three-layer structure of 2203.

(Embodiment 7)

Next, FIG. 21 shows a configuration outline of another embodiment of the transfer component wiring pattern forming material (hereinafter referred to as a sixth transfer material) of the present invention.

As shown in Fig. 21, the sixth transfer member 2003 is formed of a three-layer structure consisting of a release carrier metal foil 2301, which is a first metal layer, a peeling layer 2302, and a wiring metal foil 2303, which is a second metal. The inductor 2304, the capacitor | condenser 2305, and the resistor 2306 were formed by the printing method so that it may electrically connect with the said wiring metal foil 2303 on the wiring pattern forming material to be used.

The uneven | corrugated part is formed in the surface layer part of the metal foil 2301 for release carriers. The convex portion corresponds to the wiring pattern, and a peeling layer 2302 made of an organic layer or a metal plating layer and a wiring metal foil 2303 are formed on the convex portion region. The release metal foil 2301 and the wiring metal foil 2302 are bonded to each other through the release layer 2302.

In the fourth to sixth transfer materials, it is preferable that the adhesive strength between the first metal layer and the second metal layer is weak, for example, 50 gf / cm or less. In the fourth transfer material, by using the plating method or the vapor deposition method, the two-layer metal interlayer is not peeled off under the process of etching, plating, washing, etc., but only the second metal layer can be easily peeled off when peeling. You can see that. In addition, the passive component pattern formed by printing can be easily peeled from the first metal layer serving as a carrier.

On the other hand, in the fifth and sixth transfer materials, an organic layer thinner than 1 μm having an adhesive force is used as the release layer. As a material of this organic layer, although a urethane type resin, an epoxy type resin, a phenol resin etc. which are thermosetting resins can be used, it is not limited to this, You may use other thermoplastic resins etc., for example. However, when it is thicker than 1 micrometer, since peeling performance may deteriorate and transfer may become difficult, 1 micrometer or less is preferable.

In addition, you may interpose a plating layer as a peeling layer in order to intentionally reduce adhesive force. For example, a metal plating layer, a nickel plating layer, a nickel phosphorus alloy layer, an aluminum plating layer, etc. which are thinner than 1 micrometer may be interposed between copper foil, and may have peelability.

As a result, with respect to the wiring portion formed of the second metal layer, the second metal layer easily peels from the first metal layer when transferring to the substrate, thereby facilitating the transfer of the second metal layer and the component pattern to the substrate. . In the case where the release layer is a metal plating layer, a thickness level of 1 μm at 100 nm is sufficient, and as the thickness becomes thicker, the process cost is increased, and therefore, at least 1 μm is preferable.

Also, in the fifth and sixth transfer materials, the passive component pattern formed by the second metal layer and the printing can be easily peeled from the first metal layer serving as the carrier.

In the fourth to sixth transfer materials, the first metal layer preferably includes at least one metal selected from the group consisting of copper, aluminum, silver, and nickel. In particular, it is preferable to include copper. The second metal layer, like the first metal layer, preferably contains at least one metal selected from the group consisting of copper, aluminum, silver, and nickel, but in the case of the fourth transfer material, silver is used as the fifth or sixth. In the case of a transfer material, it is preferable to contain copper. This is because, when copper is used for the first metal layer, there are many foils having a predetermined thickness because they are inexpensive, that is, commercially available. Moreover, when copper is used for a 2nd metal layer, it is easy to produce | generate by plating.

In the case of the sixth transfer material, if the first metal layer and the second metal layer are the same, there is an effect that the processing can be controlled by the same etching solution. In particular, when the metal layer is copper, there is an advantage that the conditions for performing elaborate processing by etching are already well studied. Moreover, although the said metal may be one type, you may use two or more types together.

In the sixth transfer material, for example, when etching or removing the surface layer of the peeling layer and the first metal layer when performing etching or the like (see FIG. 21), the first metal layer and the second metal layer contain a metal having the same component. It is desirable to. In addition, when using a plating layer for a peeling layer, the structure shown in FIG. 21 can be processed with a copper etching liquid, and the structure shown in FIG. 20 cannot be processed with a copper etching liquid. Moreover, when the 1st metal layer and the 2nd metal layer contain the metal of the same component as mentioned above, although the kind of metal is not specifically limited, It is preferable that it consists of copper foil, Since it is excellent in electroconductivity, Especially preferably, it is electrolytic Copper foil. Moreover, one type may be sufficient as the said metal and it may use two or more types together.

In the fourth to sixth transfer materials, the thickness of the second metal layer is preferably in the range of 1 to 18 µm, particularly preferably in the range of 3 to 12 µm. If the thickness is thinner than 3 mu m, there is a fear that good conductivity may not be exhibited when the second metal layer is transferred to the substrate, and if the thickness is thicker than 18 mu m, there is a fear that it is difficult to form a fine wiring pattern. have.

In the fourth and fifth transfer materials, the thickness of the first metal layer is preferably in the range of 4 to 100 µm, particularly preferably in the range of 20 to 70 µm. While the first metal layer functions as a carrier, and in some cases, as shown in FIG. 21, the surface layer portion is etched like the wiring layer to form a structure having irregularities. Therefore, the first metal layer is preferably a metal layer having a sufficient thickness. The fourth to sixth transfer materials have a carrier layer as a metal layer (first metal layer), and exhibit sufficient mechanical strength and heat resistance against thermal deformation and stress deformation in the planar direction.

As the material for forming a passive component electrically connected to the wiring pattern, a paste-like material is used. Moreover, when the board | substrate with which a passive component is transferred is a board | substrate comprised, for example with thermosetting resin, it is preferable to use the thing containing a thermosetting resin as a material of a passive component similarly. When forming an inductor, magnetic metal powder or ferrite is used as a filler to mix with a thermosetting resin. In the case of forming a capacitor, a high dielectric constant ceramic powder such as barium titanate or Pb-based perovskite is used as the filler. When various resistors are used, carbon etc. are used as a filler. In this case, the resistance value can be adjusted by changing the content ratio of carbon. In the case where the resistor is formed into a thin film, a nichrome alloy, chromium silicon, tantalum nitride, ITO, or the like is used.

On the other hand, when the fourth or fifth transfer material is used, since the pattern transfer can be formed at a low temperature of 100 ° C. or lower, the component wiring pattern can also be formed on the ceramic green sheet.

On the other hand, in the case where the substrate to which the passive component is transferred is ceramic, it is preferable that only the filler remains in the material (which is in a paste form) used for printing the passive component by a binder removal process. Therefore, a paste using a vehicle in which a binder having good thermal decomposition is dissolved, for example, a vehicle in which a binder is dissolved in tapinol is used. Specifically, various fillers corresponding to the inductor, capacitor, and resistance characteristics described above are kneaded with the vehicle and three rolls or the like to form a paste-like material capable of screen printing.

In the case of forming an inductor, a magnetic metal powder or a ferrite sintered at low temperature is used as a filler, and the mixture is mixed with glass as a material. When forming a capacitor, similarly, barium titanate, glass, and Pb-based perovskite are used as the filler. When forming a resistance, ruthenium phrochlore, ruthenium oxide, and lanthanolite are used as a filler, and it mixes it with glass as a material. They can be fired at the same time as the low-temperature fired substrate ceramic, and the resistance value can be adjusted relatively easily even in the case of an inner layer resistor.

Embodiment 8                     

In this embodiment, the example of the manufacturing method of said 4th transfer material (refer FIG. 19 (a) (b)) is shown.

In this manufacturing method, as shown in Figs. 22 (a) to 22 (e), 2 in a state in which a second metal layer 2403, which is a wiring pattern, is directly attached on the first metal layer 2401, which is a carrier. A step of forming a layer structure, and (2) printing part patterns 2405 and 2406 while being positioned so as to be in electrical contact with the second metal layer 2403, as shown in Fig. 22 (e) (e '). , 2407, 2408.

In the steps shown in FIGS. 22A to 22E, after the reverse pattern of the wiring pattern is formed on the first metal layer 2401 using the dry film resist 2404, electroless plating or electroplating is performed. A wiring pattern (second metal layer 2403) made of metal foil is formed using a direct drawing method such as a pattern plating method, a sputtering method, a vapor deposition method, or the like including the above. Thereby, it is possible to form a fine wiring pattern.

In addition, in the case of a plating method, the metal foil which comprises the 2nd metal layer 2402 may be the same as the metal foil (for example, copper foil) which comprises the 1st metal layer 2401, and may be comprised by the silver plating film which is another metal. good. Moreover, the metal foil of a 1st metal layer can be reused. Therefore, cost reduction is possible and it is excellent also in industrial usability.

In addition, the printing method is optimal as a method of forming the passive component so as to be electrically connected to the wiring pattern. The printing method may be any of offset printing, gravure printing, screen printing, and the like, but screen printing is more preferably used. It is not limited to the pattern used for a resistor, and a thin film of 1 micrometer or more may be suitable in some cases, and a dielectric layer by a PVD method or a CVD method may be attached at this time.

The line width of the wiring pattern is usually required to be about 25 µm as a fine line width, and in the present invention, such a line width is preferable.

(Embodiment 9)

Next, examples of the manufacturing method of the fifth transfer material (see Fig. 20) are shown in Figs. 23A to 23F.

This manufacturing method is (1) as shown in Fig. 23A, a peeling layer 2502 composed of an organic layer or a metal plating layer on the first metal layer 2501, and the same component as that of the first metal layer 2501. Laminating a second metal layer 2503 including a metal to form a three-layer structure, and (2) the second metal layer (by chemical etching) as shown in FIGS. 23 (b) to (e). Process of forming the transfer wiring pattern 2503a (see Fig. 23 (a)) in the state where only 2503 is processed into the wiring pattern shape and the whole release layer 2502 is held, and (3) Fig. 23 (f) ), Forming a component pattern (inductor 2505, capacitor 2506, and resistor 2507) by printing while being positioned to electrically bond with the wiring pattern 2503a.

In the step of forming the wiring pattern 2503 of (2) above, in the step shown in FIG. 23B, a dry film resist 2504 is attached to the second metal layer 2503. In the process shown in Fig. 23C, the wiring pattern region 2504a is formed by the pattern exposure. In the process shown in FIG. 23D, the dry film resist in the regions 2504b other than the wiring pattern region 2504a is removed by development and etching. In the step shown in FIG. 23E, the remaining dry film resist is peeled off.                     

Specifically, a chemical etching can be performed as follows, for example. When the basic cupric chloride aqueous solution containing ammonium ions is used as the etching solution, when the release layer 2502 is made of, for example, a nickel phosphorus alloy layer, only the second metal layer 2503 can be etched. Then, using the mixed solution of nitric acid and hydrogen peroxide as the etching solution, only the release layer 2502 can be removed. According to this method, the wiring part transferred to the board | substrate does not become a recessed part, and the surface of a board | substrate can be made flat.

Embodiment 10

Next, an example of the manufacturing method of the sixth transfer material (see FIG. 21) is shown in FIGS. 24A to 24F.

Although the process of FIG.24 (a)-(c) is common with the manufacturing method of the 5th transfer material in above-mentioned Embodiment 9, the following process differs.

That is, in the manufacturing method of the 5th transfer material, only the 2nd metal layer and the peeling layer were pattern-processed by chemical etching, but the manufacturing method of the 6th transfer material is shown by chemical etching, as shown to FIG. 24 (d) (e). The surface layer portion of the first metal layer 2601 is also processed into a wiring pattern shape. That is, the uneven portion is formed in the surface layer portion of the first metal layer 2601. As shown in Fig. 24 (f), a component pattern (inductor 2605, capacitor 2606, and resistor 2608) is formed by printing while being aligned so as to be electrically bonded to the wiring pattern shape.

According to the manufacturing methods of the fourth to sixth transfer materials described above, since the metal layers of the wiring patterns are all formed by chemical etching such as a photolithography method, fine wiring patterns can be formed. Moreover, in the manufacturing method of a 6th transfer material, by making the metal foil which comprises a wiring pattern (2nd metal layer) the same as the metal foil which comprises a carrier (1st metal layer), the surface layer of a carrier is carried out by one etching process. Can be formed in the same concave-convex shape as the wiring pattern.

As described above, the constituent materials of the transfer material other than the second metal layer can be reused. In particular, in the case of the sixth transfer material, the first metal layer is processed into a wiring pattern shape, and the first metal layer can be reused for pattern formation in another method as convex printing. For this reason, cost reduction is possible and it is excellent also in industrial use.

In the method for producing the fourth to sixth transfer materials, the second metal layer may be formed by an electroplating method. Further, another metal layer (third metal layer) may be formed on the second metal layer by the electrolytic plating method. By forming the third metal layer or the second metal layer for wiring pattern formation by the electrolytic plating method, not only proper adhesion can be obtained to the bonding surface between the second metal layer and the third metal layer, but also a gap is generated between the metal layers. I never do that. Thereby, even if it etches etc., for example, a favorable wiring pattern can be formed. Alternatively, after the third metal layer is formed by panel plating on the second metal layer, masking may be performed in the shape of a wiring pattern to perform pattern formation. In this case, it is effective to prevent surface oxidation of the second metal layer after transfer and to improve solder leakage.

In the method of manufacturing the transfer wiring pattern, it is preferable to roughen the surface of the second metal layer before the third metal layer is formed on the second metal layer. Before forming the third metal layer, before forming the wiring pattern mask on the second metal layer or on the second metal layer masked in the shape of the wiring pattern, the third metal layer is formed along the wiring pattern. Says ex. As described above, when the second metal layer is roughened, adhesion between the second metal layer and the third metal layer is improved.

In the method for manufacturing the transfer material, a fourth metal layer made of a metal different from the first to third metal layers may be formed on the third metal layer by the electroplating method. As the material of the fourth metal layer, by selecting a chemically stable metal component with respect to the etching solution that corrodes the first to third metal layers, in the method of manufacturing the transfer material, the second, third and fourth metal layers may be formed by chemical etching. It is preferable because each metal layer including the surface layer portion of the first metal layer can be processed into a wiring pattern shape without reducing the thickness at all.

As the fourth metal layer, for example, a chemically stable, low resistance Ag or Au plated layer is preferable. Since these are metals that are hard to oxidize, the connectivity between the wiring layer plated with them, for example, a via formed on the substrate in advance, a bare chip pump, or a conductive adhesive can be more stabilized.

In the manufacturing method of the fifth or sixth transfer material, the printing method is most suitable as the method of forming the passive component pattern so as to be electrically connected to the wiring pattern, as in the case of the fourth transfer material. In the case where the release layer is composed of a plating layer such as a nickel plating layer or a nickel phosphorus alloy layer, all of offset printing, gravure printing, screen printing, and the like can be applied by a printing method, but screen printing is more preferably used.

Moreover, it is preferable that the material used for printing a component pattern is a paste form. As in the case of the fourth transfer material, when the substrate to which the component is transferred is a substrate composed of, for example, a thermosetting resin, one containing a thermosetting resin is used as the material of the component pattern. For example, when forming an inductor, magnetic metal powder or ferrite can be used as a filler mixed with a thermosetting resin. When forming a capacitor, similarly, barium titanate, Pb type perovskite, etc. can be used as a filler. When forming a resistance, carbon is used as a filler. The resistance value can be controlled by changing the carbon ratio. In addition, the resistor may be formed into a thin film as described above. The material of the resistor and the manufacturing method thereof are the same as described in the description of the manufacturing method of the fourth transfer material.

Similarly to the fourth transfer material, since the fifth transfer material can be pattern-transfer formed at a low temperature of 100 ° C. or lower, the component wiring pattern can also be formed on the ceramic green sheet.

In the case where the substrate for transferring the component is ceramic, it is preferable that only the filler remains in the material (paste phase) used for printing the component pattern by the binder removal process. Therefore, a paste using a vehicle in which a binder having good thermal decomposition is dissolved, such as a vehicle in which a binder is dissolved in tapineol, is used. Specifically, various fillers corresponding to the inductor, capacitor, and resistance characteristics described above are kneaded with the vehicle and three rolls or the like to form a paste-like material capable of screen printing.

When forming an inductor, the material which mixed glass and magnetic metal powder and ferrite sintered at low temperature as a filler is used. When forming a capacitor, similarly, barium titanate, glass, Pb system perovskite, etc. are used as a filler. When forming a resistance, ruthenium pyrochlore, ruthenium oxide, lanthanumite, etc. are used as a glass filler. They can be fired at the same time as the low-temperature fired substrate ceramics, and the resistance value can be adjusted relatively easily even in the case of an inner layer resistor.

These two types of fifth and sixth transfer part wiring patterns can be appropriately divided and used. For example, in the case where the component wiring pattern formed on the transfer material is transferred to the inner layer of the laminated substrate, particularly in the case where the via is formed immediately above the via, it is preferable to use the transfer material (fifth transfer material) as shown in FIG. It is preferable from the viewpoint of via connection.

On the other hand, in the case of being transferred to the surface layer, especially in the case where the distance between terminals such as an inductor, a capacitor, a semiconductor chip, and the like is close to each other, the transfer formation partially processed to the carrier layer shown in FIG. Ash (sixth transfer material) is preferred.

(Embodiment 11)

Next, the form of the circuit board manufactured using the said 4th-6th transfer material is shown to FIG. 22 (g) (g '), FIG. 23 (h), and FIG. 24 (h).

As a method of manufacturing a circuit board using the fourth to sixth transfer materials, there are at least the following two manufacturing methods. The first manufacturing method described in this embodiment is

The transfer material (refer to FIG. 22 (e), FIG. 23 (f), FIG. 24 (f)) of the said 5th-7th embodiment was prepared, and this transfer material was formed in the sheet form at the side in which the component wiring pattern was formed. Arranging so as to be in contact with at least one surface of the substrate and adhering them (see Figs. 22 (f), 23 (g) and 24 (g));

At least a step of transferring a component wiring pattern layer including at least a second metal layer and a component pattern to the sheet-like substrate by peeling the first metal layer serving as a carrier from the transfer material bonded to the sheet-like substrate. (Reference: Figs. 22 (g), 23 (h) and 24 (h)).

As a result, the fine wiring pattern and the wiring pattern including the inductor, the capacitor and the resistor, and the semiconductor chip are flat on the sheet-like substrate (see FIGS. 22 (g) and 23 (h)) or concave. (See: Figure 24 (h)) is formed. In the case of the wiring board fabricated by such a method, for example, when the wiring portion is concave (Fig. 24 (h)), for example, alignment of the wiring portion with the bumps of the semiconductor chip is facilitated, and the flip chip of the semiconductor is made. Excellent for mounting

(Twelfth Embodiment)

The second manufacturing method of the circuit board according to the present invention is the circuit board obtained by the manufacturing method of Embodiment 11 in the manufacturing method of the multilayer circuit board shown in Fig. 25 (Figs. 22 (g) and 23 ( h) and FIG. 24 (h) and the like).

Here, 2702 and 2709 are second metal layers forming wiring patterns, 2703 are resistors, 2704 are capacitors, 2705 are inductors, and 2706 are sheet-like substrates.

Since the circuit board can transfer and form the component pattern and the wiring pattern at a low temperature of 100 ° C. or lower, the circuit board is not limited to the ceramic green sheet and can maintain an uncured state even in a sheet using a thermosetting resin. As a result, after the circuit boards are laminated in two or more layers in an uncured state, it is possible to collectively thermally shrink shrinkage.                     

Therefore, in the multilayer circuit board having four or more layers, it is not necessary to correct hardening shrinkage for each layer. As a result, a circuit board having a multilayer structure having a fine wiring pattern and a component pattern can be manufactured. However, the wiring portion and the component portion forming the inner layer need not be concave, as described above, and may be flat, so that the circuit boards shown in Figs. 22 (g) and 23 (h) can be used. have.

In each of the eleventh embodiment and the manufacturing method described in the present embodiment, the sheet-shaped base material includes an inorganic filler and a thermosetting resin composition, has at least one through hole, and the through hole is filled with a conductive paste. desirable. As a result, a high density mounting composite wiring board having excellent thermal conductivity and having an IVH structure in which the wiring pattern is electrically connected by the conductive paste can be easily obtained.

Moreover, when this sheet-like base material is used, it is not necessary to carry out high temperature processing at the time of preparation of a wiring board, and low temperature processing of about 200 degreeC which is the hardening temperature of thermosetting resin, for example is enough.

It is preferable that the ratio of the said inorganic filler is 70 to 95 weight% with respect to the whole said sheet-like base material, and the ratio of the said thermosetting resin composition is 5 to 30 weight%, Especially preferably, the ratio of the said inorganic filler is 85 It is -90 weight%, and the ratio of the said thermosetting resin composition is 10-15 weight%. Since the sheet-like base material can contain a high concentration of the inorganic filler, the thermal expansion coefficient, thermal conductivity, dielectric constant, and the like on the wiring board can be arbitrarily set according to the content thereof.                     

The inorganic filler is preferably at least one inorganic filler selected from the group consisting of Al ₂ O ₃ , MgO, BN, AlN, and SiO ₂ . By appropriately determining the type of the inorganic filler, for example, thermal conductivity, thermal expansion, and dielectric constant can be set to desired conditions. For example, the thermal expansion coefficient in the planar direction in the sheet-like substrate can be set to the same level as that of the semiconductor to be mounted, and high thermal conductivity can be provided.

Among the inorganic fillers, for example, the sheet-like base material using Al ₂ O ₃ , BN, AlN or the like is excellent in thermal conductivity, and the sheet-like base material using MgO is excellent in thermal conductivity and can increase the coefficient of thermal expansion. Further, SiO ₂ in particular, in the case of using an amorphous SiO _2, the thermal expansion coefficient is small, light, it is possible to obtain a sheet-like substrate of low dielectric constant. Moreover, one type may be sufficient as the said inorganic filler, and it may use two or more types together.

The sheet-like base material containing the said inorganic filler and a thermosetting resin composition can be produced, for example by the following methods. First, the solvent for viscosity adjustment is added to the mixture containing the said inorganic filler and a thermosetting resin composition, and the slurry which is arbitrary slurry viscosity is prepared. As said viscosity preparation solvent, methyl ethyl ketone, toluene, etc. can be used, for example.

Then, on the release film prepared in advance, a film is prepared using the slurry, for example, by a doctor blade or the like, and treated at a temperature lower than the curing temperature of the thermosetting resin to volatilize the solvent for viscosity adjustment, and then the release film is removed. A sheet-like base material can be produced by this.                     

The film thickness at the time of producing the said film is suitably determined according to the composition of the said mixture, and the quantity of the said solvent for viscosity adjustment to add, Usually, it is the range of 80-200 micrometers in thickness. Moreover, although the conditions which volatilize the said solvent for viscosity preparation are suitably determined according to the kind of the said solvent for viscosity preparation, the kind of said thermosetting resin, etc., it is 5 to 15 minutes normally at the temperature of 70-150 degreeC.

As said release film, an organic film can be used normally, For example, polyethylene, a polyethylene terephthalate, a polyethylene terephthalate, polyphenylene sulfide (PPS), a polyphenylene terephthalate, a polyimide, and a polyamide It is preferred that it is an organic film comprising at least one resin selected from the group consisting of, particularly preferably PPS.

In addition, the sheet-like reinforcing material is impregnated with a thermosetting resin composition, and a sheet-like base material having at least one through hole and filled with a conductive paste in the through hole can be used.

The sheet-like reinforcing material is not particularly limited as long as it can hold the thermosetting resin, but at least one sheet-like selected from the group consisting of a woven fabric of glass fibers, a nonwoven fabric of glass fibers, a woven fabric of heat resistant organic fibers, and a nonwoven fabric of heat resistant organic fibers. It is preferable that it is a reinforcing material. Examples of the heat-resistant organic fibers include wholly aromatic polyamides (aramid resins), wholly aromatic polyesters, polybutylene oxides, and the like. Among them, aramid resins are preferable.

The thermosetting resin is not particularly limited as long as it is heat resistant, but is particularly excellent in heat resistance. It is preferable to include resin. Moreover, any one kind of said thermosetting resin may be used, and it may use two or more types together.

Such a sheet-like base material can be produced by, for example, immersing the sheet-like reinforcing material in the thermosetting resin composition, followed by drying to a semi-cured state. It is preferable to perform the said impregnation so that the ratio of the said thermosetting resin in the whole said sheet-like base material may be 30 to 60 weight%.

In these manufacturing methods, when using the sheet-like base material containing the above-mentioned thermosetting resin, it is preferable to perform lamination | stacking of the said wiring board by hardening of the said thermosetting resin by a heat press process. According to this, in the lamination step of the wiring board, for example, a low temperature treatment of about 200 ° C., which is a curing temperature of the thermosetting resin, is sufficient.

The sheet-like reinforcing material may be one obtained by coating a thermosetting resin on a film-like sheet such as polyimide, LCP or aramid.

In addition, these wiring boards are not limited to a resin board, but may be a ceramic board. In this case, as a sheet-like base material, in the green sheet which consists of an organic binder, a plasticizer, and a ceramic powder, what has at least 1 through hole, and the said through hole is filled with the conductive paste can be used. This sheet-like base material is high heat resistance, good sealing property, and is excellent also in thermal conductivity.                     

The ceramic powder preferably comprises at least one ceramic selected from the group consisting of Al ₂ O ₃ , MgO, ZrO ₂ , TiO ₂ , BeO, BN, SiO ₂ , CaO and glass, particularly preferably Al ₂ O _{3 It} is a mixture of 50-55 weight% and 45-50 weight% of glass powder. Moreover, one type of said ceramic may be sufficient and it may use two or more types together.

As the organic binder, for example, polyvinyl butyrate (PVB), acrylic resin, methyl cellulose resin, or the like can be used. As the plasticizer, butyl benzyl phthalate (BBP), dibutyl phthalate (DBP) or the like can be used.

The green sheet containing such ceramic powder or the like can be produced, for example, by the same method as the method for producing the sheet-like base material containing the inorganic filler and the thermosetting resin. In addition, each processing condition is suitably determined by the kind etc. of the said constituent material.

For example, when the second metal layer 2403 of the transfer material shown in FIG. 22, that is, the wiring layer is made of silver, silver is a metal having oxidation resistance, so that the binder removal in the air and the firing in the air can be performed, and the manufacturing process On the other hand, in the case where the second metal layers 2503 and 2603 shown in Figs. 23 and 24 are made of copper, since the transferred wiring portion is a non-metal which is easy to be oxidized, a non-oxidizing atmosphere, For example, a debinder treatment in a nitrogen atmosphere and a nitrogen firing process are required. Therefore, the structure corresponding to the nitrogen process is calculated | required also for the green sheet. Therefore, the thermal decomposition property in a non-oxidizing atmosphere is strongly requested | required also about the vehicle and binder used for printing inductors, capacitors, and resistors.

The thickness of the said sheet-like base material as mentioned above is 100-250 micrometers normally.

As mentioned above, it is preferable that the said sheet-like base material has at least 1 through hole, and the said through hole is filled with the electrically conductive paste. The position of the through hole is not particularly limited as long as it is usually formed in contact with the wiring pattern, but it is preferable that the pitch is formed at a position of 250 to 500 占 퐉 or the like interval.

The size of the through hole is not particularly limited, but is usually in the range of 100 to 200 mu m in diameter, and preferably in the range of 100 to 150 mu m in diameter.

The formation method of the through-hole is appropriately determined depending on the kind of the sheet-like base material, and the like, for example, carbon dioxide laser processing, processing by punching machine, batch processing by mold, and the like.

Although it will not restrict | limit especially if it has electroconductivity as said electroconductive paste, Resin etc. containing the particle | grains of electroconductive metal material can be used normally. As said conductive metal material, copper, silver, gold, silver palladium, etc. can be used, for example, As said resin, organic binders, such as an epoxy resin, a phenol resin, a cellulose resin, an acrylic resin, can be used.

In addition, the content of the conductive metal material in the conductive paste is usually in the range of 80 to 95% by weight. Moreover, when the said sheet-like base material is a ceramic green sheet, a thermoplastic binder is used instead of a thermosetting resin, and glass powder is used as an adhesive agent.

Next, the method of adhering the transfer material and the sheet-like substrate in the above step and the method of peeling the first metal layer from the transfer material bonded to the sheet-like substrate are not particularly limited, but the sheet-like substrate is other than the ceramic substrate. When it contains a thermosetting resin, it can carry out by the method as shown below, for example.

First, the transfer material (FIG. 23 (f)) and the sheet-like base material 2508 are arranged as shown in FIG. 23 (g), and the thermosetting resin in the sheet-like base material is melted and softened by heat and pressure treatment to form the sheet-like base material. The metal layer 2503 on which the wiring pattern is formed and the printed passive component patterns 2505, 2506, and 2507 are buried. 2505 is an inductor, 2506 is a capacitor, and 2507 is a resistor. However, in the case of transferring a circuit component requiring an electrode on both surfaces of the dielectric layer, such as a capacitor, as shown in Fig. 23G, only the wiring pattern 2510 corresponding to this in advance is transferred to the sheet-like base material 2508. It is preferable to form at).

Subsequently, the sheet-like substrate obtained by pressing the transfer material is treated at the softening temperature or the curing temperature of the thermosetting resin, and in the latter case, the transfer material and the sheet-like substrate can be adhered by curing the resin. In addition, adhesion between the second metal layer 2503 and the sheet-like substrate 2508 is also fixed.

The heating and pressing conditions are not particularly limited as long as the thermosetting resin is not completely cured. The pressure is usually about 9.8 × 10 ^{5 to} 9.8 × 10 ⁶ Pa (10 to 100 kg / cm 2), at a temperature of 70 to 260 ° C., The time is 30 to 120 minutes.

After the transfer material (FIG. 23 (f)) and the sheet-like base material 2508 are bonded together, the second metal layer 2503 is pulled out by peeling at the release layer interface, for example, by pulling the first metal layer 2501 serving as a carrier layer. And the first metal layer 2501 from the passive component patterns 2505, 2506, and 2507.

That is, since the adhesive strength of the second metal layer and the component pattern to the first metal layer through the release layer is weaker than the adhesive strength to the sheet-like substrate, the adhesive surface of the first metal layer and the pattern of the second metal layer and the passive component This peels off. As a result, only components and wiring patterns are transferred to the sheet-like substrate, and the first metal layer is peeled off (see Fig. 23 (h)).

Moreover, you may perform hardening of the said thermosetting resin after peeling a 1st metal layer from the said component wiring pattern.

In addition, the said sheet-like base material can be performed by the method as shown below, for example, when it is a green sheet which comprises the said ceramic substrate. For example, in FIGS. 22A to 22D, silver wiring is formed by the electroplating method as the second metal layer 2403, that is, as the wiring layer, using copper foil for the first metal layer 2401. Thereafter, passive components and the like are formed by screen printing so as to be electrically connected to the silver wiring, thereby forming transfer components and wiring patterns. However, in the case of a ceramic substrate, since baking is followed, the semiconductor chip shown in FIG. 22 (e ') is not mounted. In this configuration, by heating and pressing in the same manner as described above, the component wiring pattern is embedded in the green sheet which is a sheet-like substrate, and the green sheet and the transfer component wiring pattern forming material can be adhered to each other.

Thereafter, similarly to the above, by removing the carrier, constituent materials of the transfer material other than the component wiring pattern are removed. The restraint aluminum green sheet is laminated on the green sheet to which the component wiring pattern is transferred. Thereafter, air debinding and air firing are performed to sinter the ceramic to fix the transferred second metal layer and the component pattern to the ceramic substrate. Since the transfer material is made of silver, the transfer material is advantageous in that binder removal in the air and firing in the air can be performed.

On the other hand, in the case of the methods of Figs. 23 (a) to (h) and Figs. 24 (a) to (h), the first metal layer is formed of copper foil, and as the second metal layer, that is, the wiring layer, for example, a chemistry using a photolithography method. Copper wiring is formed by the etching method. Copper wiring can be manufactured at a lower cost than silver wiring produced by the plating method, and has excellent migration resistance. Thereafter, passive components and the like are formed by screen printing so as to be electrically connected, thereby forming a transfer component wiring pattern.

In the case of ceramic substrates, however, sintering is performed, so that the semiconductor chips are not mounted as shown in Fig. 22E. In this configuration, as described above, by performing the heating and pressing treatment, the wiring pattern is embedded in the sheet-like substrate (green sheet), and the sheet-like base material and the transfer part wiring pattern forming material can be adhered to each other. Thereafter, as described above, by removing the carrier, constituent materials other than the component wiring pattern are removed.

Then, the restraining alumina green sheet is laminated on the green sheet to which the component wiring pattern is transferred. Thereafter, debinder treatment and firing treatment are performed in an atmosphere in which copper is not oxidized, such as a nitrogen atmosphere, and the ceramic is sintered by fixing the transferred second metal layer and the component pattern on the ceramic substrate. Since the wiring of the transfer material is copper, the transfer material itself can be produced at a lower cost than in the case of silver wiring. In view of the silver wiring, it is necessary to perform the firing step in a non-oxidizing atmosphere.

Therefore, the binder of the paste which comprises a green sheet binder and a passive component needs to use what is good thermal decomposition property, such as a methacrylic acid type acrylic binder, for example.

Therefore, according to the sintering conditions of the green sheet which comprises a board | substrate and the ceramic which comprises a passive component, the structure of a transfer material is used separately.

The heating and pressing conditions are appropriately determined depending on, for example, the type of organic binder contained in the green sheet and the conductive paste, and the pressure is generally about 9.8 × 10 ^{5 to} 1.96 × 10 ⁷ Pa (10 to 200 kg / cm 2), and the temperature is 70 It is -100 degreeC and time 2-30 minutes. Therefore, the wiring pattern can be formed without damaging the green sheet.

The debinding treatment is appropriately determined by, for example, the type of the binder, the metal constituting the wiring pattern, and the like, but can usually be performed by using an electric furnace for 2 to 5 hours at a temperature of 500 to 700 ° C. have.

Although the conditions of the said baking process are suitably determined by the kind of said ceramics etc., for example, normally, it is a temperature of 860-950 degreeC and time 30-60 minutes in air or nitrogen using a belt furnace.

The second manufacturing method of the wiring board, that is, the manufacturing method of the multilayer circuit board will be described. In this way, when a multilayer circuit board as shown in Fig. 25 is produced, it can be produced by sequentially stacking single layer circuit boards produced in the same manner as described above and bonding the layers together. Naturally, it is also possible to laminate | stack two or more layers of a single-layer circuit board, and to harden them collectively.

For example, when laminating a circuit board having a sheet-like base material containing a thermosetting resin, as shown in Figs. 26A to 26C, as described above, at a low temperature that does not thermally cure the sheet-like base material. By transferring only the component wiring patterns in the reverse direction, single-layer circuit boards as shown in Figs. 26A to 26C are obtained, respectively. Then, the laminate of the single-layered circuit board is heated and pressurized at the curing temperature of the thermosetting resin, and the thermosetting resin is cured to adhesively fix the circuit boards.

When the temperature of the heating and press condition when transferring the component wiring pattern is intentionally set to 100 ° C or lower, the sheet-like substrate is treated almost like prepreg even after the transfer. As a result, the multilayered circuit board can be manufactured by gluing together and fixing a plurality of stacked single-layered circuit boards without sequential stacking and bonding of the single-layered circuit boards.

For example, in the case where the sheet-like substrate is laminated with a ceramic circuit board containing ceramic, as described above, only the component wiring pattern is transferred to the sheet-like substrate, and then the ceramic circuit board of this single layer is laminated and heated and pressed. By carrying out the treatment, firing of the ceramic and adhesion fixing between the circuit board can be performed simultaneously.

The number of layers in the multilayer circuit board (Fig. 25) is not particularly limited, but there are usually 4 to 8 layers and up to 12 layers. The overall thickness of the multilayer circuit board is usually 500 to 1000 mu m.                     

The surface of the circuit board constituting the intermediate layer other than the outermost layer of the multilayer circuit board (FIG. 25) is considered to be flat, not an uneven surface, in which wiring patterns or the like are embedded in the recess, in consideration of the electrical connection structure by the inner via. good. In order to obtain this structure intentionally, a fourth or fifth transfer material may be used. The outermost layer of the multilayer circuit board may be a circuit board having a flat surface, but a semiconductor chip as shown in Fig. 24 (h) as long as it is a wiring board having a concave portion on the surface and a second metal layer formed on the bottom thereof. It is preferable to make it easier to mount.

Hereinafter, more specific Example is described about the said Embodiment 5-12.

(Example 11)

(A)-(g ') is sectional drawing which shows an example of the outline of the manufacturing process of a 4th transfer material.

As shown in Figs. 22A to 22E and 22A to E ', a transfer material (Fig. 22E) including passive components 2405, 2406, and 2407, A transfer material (Fig. 22 (e ')) including a semiconductor chip 2408 as an active component was produced.

As shown in FIG. 22A, an electrolytic copper foil having a thickness of 35 μm was prepared as the first metal layer 2401. First, a copper salt raw material is melt | dissolved in an alkaline bath, it is electrodeposited to a rotating drum so that it may become high current density, and a metal layer (copper layer) is produced. This copper layer was rolled continuously and an electrolytic copper foil was produced.

Next, as shown in FIG. 22B, a reverse pattern of wiring was formed using the dry film resist 2404. After that, as shown in Fig. 22C, a wiring pattern forming metal layer 2403 made of silver is laminated on the surface of the first metal layer 2401 by an electrolytic plating method so as to have a thickness of 9 µm. A two-layer structure as shown in Fig. 22 (d) was produced. The roughening process was performed so that the centerline roughness Ra of this surface might be about 4 micrometers.

Next, portions corresponding to passive components (inductors, capacitors and resistors) were formed by screen printing. In this embodiment, assuming that the ceramic substrate is mounted on a ceramic substrate, the constitution of an active component capable of simultaneous firing was set.

As the inductor 2405, Ni-Zn ferrite powder, acrylic resin 5 wt% (polymerization degree: 100 cps), tapineol 15 wt%, BBP 5 Using weight%, these components were kneaded with three rolls and the paste thing was produced.

As the capacitor 2406, a Pb-based perovskite compound (PbO-MgO-Nb ₂ O ₅ -NiO-WO ₃ -TiO ₂ ) powder was kneaded in three rolls in the same configuration to produce a paste-like one. did. As the resistor 2407, a paste-like thing was similarly produced using the thing which mixed the low melting point borosilicate glass 95-50 weight% with the ruthenium oxide powder 5-50 weight%.

Using these pastes and using a mask of a predetermined shape, on the two-layer structure shown in Fig. 22 (d), as shown in Fig. 22 (e), the inductor 2405, the capacitor 2406, and the resistor ( 2407) were formed respectively for printing. After printing, it was made to dry on 90 degreeC and the conditions of 20 minutes.

In the case of transferring, firing and fixing to the ceramic substrate, active parts such as semiconductor chips are not formed in the transfer material (see Fig. 22 (e)). However, in the case of transferring to a resin substrate, the semiconductor chip 2408 or the like may be flip chip mounted as an active component (see Fig. 22 (e ')). After flip chip mounting, the underfill 2411 may be injected so as to fill the gap between the semiconductor chip 2408 and the wiring pattern 2412 and may be completely cured and integrated at 150 ° C.

Using the transfer material of Fig. 22 (e), a ceramic circuit board was produced in the same manner as shown in Figs. 22 (f) to (g).

First, the board | substrate 2409 which transfers a wiring pattern was prepared. The substrate 2409 was prepared by preparing a low temperature calcined ceramic green sheet (A) containing a low temperature calcined ceramic material and an organic binder, forming a via hole therein, and filling the via hole with a conductive paste 2410. . Below, the component composition of the said green sheet (A) is shown.

(Component Composition of Green Sheet (A))

88% by weight of a mixture of ceramic powder Al ₂ O ₃ and borosilicate glass (MLS-2000)

Carboxylic acrylic binder (Olycox 8125T): 10% by weight

2% by weight of BBP

Each said component was weighed out to the said composition, and toluene solvent was added to these mixture as a solvent for viscosity adjustment until the slurry viscosity of the said mixture became about 20 Pa.s. Then, alumina gemstone was added thereto, and the mixture was rotated and mixed under conditions of a speed of 500 rpm for 48 hours in a pot to prepare a slurry.

Next, a PPS film having a thickness of 75 µm was prepared as a release film, and on this PPS film, a film was produced with a gap of about 0.4 mm by the doctor blade method using the slurry to prepare a film forming sheet. The said toluene solvent in the said sheet was volatilized, the said PPS film was removed, and the green sheet (A) of 220 micrometers in thickness was produced. Since this plastic sheet BBP was added to the said carboxylic acid type acrylic binder which is an organic binder, this green sheet (A) had high strength, flexibility, and favorable thermal decomposition property.

A through hole having a diameter of 0.15 mm at the position where the green sheet A is cut to a predetermined size using its flexibility, and the pitch is equally spaced between 0.2 mm and 2 mm using a punching machine (empty hole). Formed). And this through hole was filled with the via-hole conductive paste for screen printing. The board | substrate 2409 was produced by the above process. The electrically conductive paste 2409 prepared the following materials so that it may have the following compositions, and knead | mixed by three rolls.

(Conductive paste 2410)

Spherical silver particles (particle diameter: 3 μm): 75% by weight

Acrylic resin (polymerization degree: 100 cps): 5 wt%

Tapineol: 15% by weight

BBP (5% by weight)

Next, as shown in FIG.22 (f), it arrange | positions so that the transfer material of FIG.22 (e) may contact with the both surfaces 2409 of the said board | substrate, and press heat 70 degreeC and pressure about 5.88 using heat press. Heat pressurization was performed for 5 minutes at 10 ⁶ Pa (60 kg / cm 2). In addition, the capacitor 2406 has a structure in which the dielectric layer is sandwiched between the upper and lower electrode surfaces. Thus, the electrode pattern 2411 may be formed on the substrate 2409 by transfer or the like in advance. Such a method is possible only in the case of using the transfer material of the present invention in which the capacitor is printed, which is difficult in the conventional method of printing a dielectric layer on a substrate green sheet.

By this heating and pressing process, the acrylic resin in the said board | substrate 2409 melt-softened, and the wiring layer 2403 and the circuit components 2405, 2406, and 2407 of the said 2nd metal layer were buried in the board | substrate 2409.

After cooling the laminate of the substrate 2409 and the transfer material, the metal layer 2401, which is the carrier of the transfer material, is peeled from the laminate, thereby forming the wiring layers 2403 and the circuit parts 2405, 2406, and 2407 on both sides. A transferred circuit board sheet was obtained.

Then, the circuit board sheet was sandwiched by a green sheet made of an alumina inorganic filler not sintered at its firing temperature as a raw material, and fixed by debindering and firing in an atmosphere of air. First, in order to remove the organic binder in a circuit board (FIG. 22 (g)), it heated to 500 degreeC at the temperature increase rate of 25 degree-C / hour using an electric furnace, and processed at the temperature of 500 degreeC for 2 hours. Then, firing was performed by treating the wiring board on which the debinding treatment was completed in the air at 900 ° C. for 2 minutes using a belt furnace. These conditions were made into 20 minutes of temperature rise, 20 minutes of temperature fall, and 60 minutes of inout total. After firing, the alumina layer could be easily removed.                     

After the firing, the wiring board was formed with a flat mounting surface. A gold plated layer may be formed on the wiring layer 2043 of this circuit board (Fig. 22 (g)).

No warpage, cracks, or twists occurred in the circuit board. This can realize simultaneous firing of a copper foil wiring and a ceramic board | substrate by employ | adopting this method which also comes from employ | adopting the sintering method which is non-shrinkage in a planar direction. The mounting positions of the circuit components (inductors, capacitors, and resistors) were also accurate, and the circuit boards with the exact design could be formed by batch transfer.

Moreover, even if the capacitor high temperature load reliability test (125 degreeC, 50V, 1000 hours) was performed, the insulation resistance did not deteriorate in the dielectric layer of the capacitor | condenser 2406, and the insulation resistance of 10 <^6> Pa or more was ensured. The dielectric constant of the dielectric layer was 5000 and the dielectric constant of the substrate layer was 8.1. The inductance of the inductor 2405 was able to secure 0.5 μH. Moreover, about the resistance value of the resistor 2407, arbitrary values of 100 kHz-1 kHz were realizable.

Thus, by using the transfer material of the present invention, circuit formation including passive components such as an inductor, a capacitor, and a resistor can be easily realized.

In addition, an advantage of the present embodiment is that the wiring having a very high conductivity can be obtained by the firing process that is non-shrinkable in the planar direction and the transfer process of the dense conductive pattern by the plating method, and by using silver as the wiring metal, It is possible to remove the binder and fire. In particular, since the latter process can be employed, each composition of passive components such as substrate composition, inductor, capacitor and resistor can be widely selected.                     

In addition, the case where the transfer material shown in Fig. 22 (e ') is transferred, mounted and fixed to the resin substrate is shown in Fig. 22 (f') (g '). It can be confirmed that batch transfer and mounting can be performed satisfactorily.

(Example 12)

23 (a) to 23 (h) are cross-sectional views showing an example of the outline of the manufacturing process of the wiring board using the fifth transfer material.

As shown to Fig.23 (a)-(f), the 5th transfer material was produced.

First, as shown to Fig.23 (a), the 35-micrometer-thick electrolytic copper foil was prepared as the 1st metal layer 2501. As shown to FIG. Specifically, the copper salt raw material was melt | dissolved in the alkaline bath, it was electrodeposited by the rotating drum so that it might become high current density, the metal layer (copper layer) was produced, and the copper layer was continuously rolled up and the electrolytic copper foil was produced.

Next, on the surface of the first metal layer 2501, a thin plating layer of nickel phosphorus alloy was formed as the release layer 2502. As the wiring pattern formation metal layer 2503, the same electrolytic copper foil as the said 1st metal layer 2501 was laminated | stacked by the electroplating method so that it might be set to 9 micrometers in thickness, and the 2nd metal layer 2503 was formed. This produced the laminated body which consists of a 3-layered structure (refer FIG. 23 (a)).

The roughening process was performed so that the centerline average roughness Ra of the surface might be about 4 micrometers. Moreover, the said roughening process was performed by depositing fine grains of copper in the said electrolytic copper foil.

Next, as shown in Fig. 23B, a dry film resist (DFR) 2504 is attached to the laminate by a photolithography method, and as shown in Fig. 23C, a wiring pattern The part is exposed and developed. As shown in Fig. 23 (d), the second metal layer 2503 of the laminate is etched by a chemical etching method (immersed by adding ammonium ions to a cupric chloride aqueous solution and immersing it in a base system). It was formed in an arbitrary wiring pattern. According to this etching liquid, only the 2nd metal layer 2503 is etched, and the nickel phosphorus alloy layer which is a peeling layer is not etched.

Thereafter, as shown in Fig. 23E, the remaining dry film resist was removed with a release agent to obtain a transfer material.

Next, portions corresponding to passive components were formed by screen printing. In this embodiment, an inductor, a capacitor, and a resistor capable of co-firing are used, assuming mounting on a ceramic substrate.

As the inductor 2505, Ni-Zn ferrite powder, 5% by weight of acrylic resin (polymerization degree: 100 cps), 15% by weight of tapineol, BBP 5 These components were kneaded in three rolls using a weight% to prepare a paste.

As the condenser 2506, a Pb-based perovskite compound (PbO-MgO-Nb ₂ O ₅ -NiO-WO ₃ -TiO ₂ ) powder was kneaded into three rolls in the same configuration to produce a paste-like one. did.

As the resistor 2507, a paste-like one was produced in the same manner using a mixture of 5 to 50 wt% of ruthenium oxide powder and 95 to 50 wt% of low melting point borosilicate glass.                     

Using these pastes and using a mask of a predetermined shape, on the transfer material shown in Fig. 23 (e), as shown in Fig. 23 (f), the inductor 2505, the capacitor 2506, and the resistor 2507 Formed printing). Using this transfer material, a ceramic circuit board was produced as shown in Figs. 23 (g) to (h).

First, the substrate 2508 was prepared. The substrate 2508 was prepared by preparing a low temperature calcined ceramic green sheet (B) containing a low temperature calcined ceramic material and an organic binder, forming a via hole therein, and filling the via hole with a conductive paste 2509. . Below, the component composition of the said green sheet (B) is shown.

(Component Composition of Green Sheet (B))

88% by weight of a mixture of ceramic powder Al ₂ O ₃ and lead borosilicate glass (MLS-1000)

Methacrylic acid acrylic binder (Olycox 7025): 10% by weight

2% by weight of BBP

Each said component was weighed out to the said composition, and toluene solvent was added to these mixture as a solvent for viscosity adjustment until the slurry clay of the said mixture became about 20 Pa.s. And alumina gemstone was added here, it rotated and mixed on the conditions for 48 hours and the speed of 500 rpm in the pot, and prepared the slurry.

Next, a PPS film having a thickness of 75 µm was prepared as a release film, and on this PPS film, a film was formed with a gap of about 0.4 mm by the doctor blade method using the slurry to prepare a film forming sheet. The said toluene solvent in the said sheet was volatilized, the said PPS film was removed, and the green sheet (B) of thickness 220micrometer was produced. Since this plastic sheet BBP was added to the said methacrylic acid type acrylic binder which is an organic binder, this green sheet (B) had flexibility and favorable thermal decomposition property.

This green sheet B is cut to a predetermined size using its flexibility, and a punching machine uses a punching machine at a position where the pitches are equally spaced between 0.2 mm and 2 mm (via holes) with a diameter of 0.15 mm. Formed. And this through hole was filled with the via-hole filling conductive paste 2509 by the screen printing method. The board | substrate 2508 was produced by the above process. Moreover, the electrically conductive paste 2509 prepared the following materials so that it may have the following compositions, and knead | mixed by three rolls.

(Conductive paste (2509))

75% by weight of spherical silver particles (particle size: 3㎛)

5% by weight of acrylic resin (polymerization degree: 100 cps)

15% by weight of tapineol

5% by weight of BBP

Next, the transfer material (FIG. 23 (f)) produced as described above is placed on both surfaces 2508 of the substrate, and the press temperature is 70 deg. C and the pressure is about 5.88 x 10 ⁶ using a heat press. Heat press treatment was performed at Pa (60 kg / cm 2) for 5 minutes. In addition, the capacitor 2506 has a structure in which the dielectric layer is sandwiched between the upper and lower electrode surfaces. Thus, the electrode pattern 2510 may be formed on the substrate 2508 in advance by transfer or the like. Such a method is possible only in the case of using the transfer material of the present invention in which the capacitor is printed, which is difficult in the conventional method of printing a dielectric layer directly on the substrate green sheet.

By this heating and pressing process, the acrylic resin in the substrate 2508 is melted and softened, so that the second metal layer 2503, which is a wiring pattern, the inductor 2505, the capacitor 2506, and the resistor 2507, which are circuit components, are substrates. Buried in (2508).

After cooling such a laminate of the transfer material and the substrate 2508, the first metal layer 2501 and the peeling layer 2502, which are carriers of the transfer material, are peeled from the laminate, so that the second metal layer serving as a wiring layer on both surfaces ( 2503 and a circuit board sheet on which the inductor 2505, the capacitor 2506, and the resistor 2507, which are circuit components, are transferred.

Then, the circuit board sheet was sandwiched by a green sheet made of only an alumina inorganic filler which was not sintered at the firing temperature, and laminated, and then fixed by debindering and firing in an atmosphere in nitrogen.

First, in order to remove the organic binder in a circuit board sheet (FIG. 23 (h)), it heated to 600 degreeC at the temperature increase rate of 25 degree-C / hour using an electric furnace, and processed at the temperature of 600 degreeC for 2 hours. Then, firing was carried out by treating the wiring board after the debindering treatment was completed at 900 ° C. for 20 minutes in nitrogen using a belt furnace. These conditions were made into 20 minutes of temperature rise, 20 minutes of temperature fall, and 60 minutes of inout total. After firing, the alumina layer could be easily removed.

On this wiring board (Fig. 23 (h)), a flat mounting surface was formed. Further, a gold plated layer may be formed on the wiring layer 503 of this circuit board (FIG. 23 (h)).

No warpage, cracks, or twists occurred in the circuit board. This is because the ceramic substrate shrinks only in the thickness direction because the sintering method that is non-shrinkable in the planar direction is adopted. Thereby, simultaneous baking of a copper foil wiring and a ceramic substrate was realizable. The mounting position of each circuit part was also accurate, and the circuit board of the exact design could be formed by batch transfer.

Moreover, even if the capacitor high temperature load reliability test (125 degreeC, 50V, 1000 hours) was performed, there was no degradation of insulation resistance in the dielectric layer of the capacitor | condenser 2506, and the insulation resistance of 10 ⁶ kPa or more was ensured. The dielectric constant of the dielectric layer was 5000 and the dielectric constant of the substrate layer was 8.1. The inductance of the inductor 2505 could secure 0.5 μH. Moreover, about the resistance value of a resistor, arbitrary values of 100 kV-1 kV were realized.

Thus, by using the transfer material of the present invention, circuit formation including an inductor, a capacitor, a resistor, and the like could be easily realized.

(Example 13)

24A to 24H are sectional views showing an example of the outline of the manufacturing process of the wiring board using the sixth transfer material.

First, as shown to Fig.24 (a)-(f), the 6th transfer material was produced.

First, an electrolytic copper foil having a thickness of 35 μm was prepared as the first metal layer 2601. First, the copper salt raw material was melt | dissolved in the alkaline bath, it was electrodeposited to the rotating drum so that it might become high current density, the metal layer (copper layer) was produced, and the copper layer was continuously rolled up and the electrolytic copper foil was produced.

Next, on the surface of the first metal layer 2601, a thin adhesive composed of an organic layer is applied to form a release layer 2602. And the electrolytic copper foil similar to the said 1st metal layer 2601 was laminated | stacked by the electroplating method as the 2nd metal layer 2603 for wiring pattern formation so that it might be set to 9 micrometers in thickness. This produced the laminated body which consists of a three-layered structure as shown to FIG. 24 (a).

The roughening process was performed so that the centerline average roughness Ra of the surface might be about 4 micrometers. Moreover, the said roughening process was performed by depositing fine grains of copper in the said electrolytic copper foil.

Next, as shown in Fig. 24B, a dry film resist (DFR) 2604 was attached to the laminate by a photolithography method. And as shown in FIG.24 (c), exposure and image development of a wiring pattern part are performed. As shown in Fig. 24 (d), not only the second metal layer 2602 but also the surface layer portion of the first metal layer 2601 is chemically etched (immersed in an aqueous ferric chloride solution) in the laminate. It etched and formed in arbitrary wiring pattern.

Thereafter, the DFR 2604 was removed with a release agent to obtain a three-layer structure as shown in Fig. 24E. Since the first metal layer and the second metal layer are made of the same copper, the wiring layer can be partially formed on the first metal layer as well as the second metal layer by one chemical etching. This structure is characterized by being processed in a wiring pattern up to the first metal layer serving as a carrier layer. In addition, in the present Example, although the organic layer was used as a peeling layer, even if it uses a nickel plating layer etc., the transfer material which has the same effect | action can be obtained.

In this three-layer structure, the peeling layer 2602 between the first metal layer 2601 and the second metal layer 2603 for wiring pattern formation is excellent in chemical resistance even when the adhesive force itself is weak, and is etched in the entire three-layer structure. Even if it processed, the interlayer did not peel and could form a wiring pattern without a problem. On the other hand, the adhesive strength through the peeling layer 2602 between the first metal layer 2601 and the second metal layer 2603 was 40 g / cm, which was excellent in peelability.

Next, the circuit component was formed by screen printing. In this embodiment, assuming that the resin substrate is mounted on the resin substrate, only passive components such as an inductor, a capacitor, and a resistor that can be simultaneously cured are formed.

As the inductor 2605, Ni-Zn ferrite powder, 10 wt% of a liquid epoxy resin (EF-450, Japan Co., Ltd.), 0.3 wt% of a coupling agent (Ajinomi Co., Titanate series: 46B) were used. And these components were knead | mixed using the kneading machine which revolves and rotates at high speed, and the paste-form thing was produced.

Moreover, the paste which consists of the same structure which uses a magnetic alloy powder and a sender powder as a filler was also produced. As the condenser 2606, a Pb-based perovskite compound (PbO-MgO-Nb ₂ O ₅ -NiO-WO ₃ -TiO ₂ ) powder was kneaded in a kneader with the same configuration to produce a paste-like one. did. As the resistor 2607, a paste-like one having a configuration in which the carbon content was changed was produced.

Using these pastes, a sixth transfer material is formed by printing and forming a circuit component on the three-layer structure shown in Fig. 24E using a mask having a predetermined shape, as shown in Fig. 24F. Formed. After printing, it was made to dry on 90 degreeC and the conditions of 20 minutes.

In addition, on the transfer material, the wiring 2613 was formed assuming that the semiconductor chip 2608 is mounted on the wiring board after the transfer using the transfer material.

Thereafter, as shown in Fig. 24 (g) to (h), a printed circuit board was manufactured by the following method.

First, the substrate 2610 was prepared. This substrate 2610 was prepared by preparing a sheet-like base material made of a composite material, forming a via hole therein, and filling the via hole with a conductive paste 2611. The component composition of the sheet-like substrate 2610 is shown below.

(Component Composition of Sheet-like Substrate 2610)

Al ₂ O ₃ (AS-40: particle size 12㎛): 90 wt%

Liquid epoxy resin (EF-450, Nippon Lek Co., Ltd.): 9.5 wt%

Carbon black: 0.2% by weight

Coupling agent (Ajinomi Co., Titanate type: 46B): 0.3% by weight

Each said component was weighed out to the said composition, and the methyl ethyl ketone solvent was added to these mixture as a viscosity adjusting solvent until the slurry viscosity of the said mixture became about 20 Pa.s. And alumina gemstone was added here, it rotated and mixed on the conditions for 48 hours and the speed of 500 rpm in the pot, and prepared the slurry.

Next, as a mold release film, a 75-micrometer-thick PET film was prepared, the film was formed into a gap of about 0.7 mm by the doctor blade method using this slurry on this PET film, and the film-forming sheet was produced. And the film forming sheet was left to stand at 100 degreeC for 1 hour, the said methyl ethyl ketone solvent in the said sheet was volatilized, the said PET film was removed, and the sheet-like base material 601 of 350 micrometers in thickness was produced. Since the said solvent was removed at the temperature of 100 degreeC, the said epoxy resin remained uncured and the said sheet-like base material had flexibility.

This sheet-like base material is cut into a predetermined size using its flexibility, and a through hole (empty hole) having a diameter of 0.15 mm is used at a position where the pitch is equally spaced between 0.2 mm and 2 mm using a carbon dioxide gas laser. Formed. And this through-hole was filled with the via-hole filling electrically conductive paste 2611 by the screen printing method. The substrate 2610 was produced by the above process. The said electrically conductive paste 2611 prepared the following materials so that it may become the following compositions, and knead | mixed by three rolls.

(Conductive Paste (2611))

Spherical copper particles (particle diameter: 2 μm): 85 wt%

Bisphenol A epoxy resin (Epicoat 828, Shell Shell Epoxy Co., Ltd.): 3% by weight

Glycidyl ester epoxy resin (YD-171): 9% by weight                     

Amine adduct hardener (Ajinomi Co., MY-24): 3% by weight

Next, as shown in Fig. 24G, the substrate 2610 is disposed on both surfaces of the substrate 2610 so as to be in contact with the pattern side of the components of the transfer material (Fig. 24 (f)) prepared as described above. Was heated and pressurized at a press temperature of 120 ° C. and a pressure of about 9.8 × 10 ⁵ Pa (10 kg / cm 2) for 5 minutes.

In the case of the capacitor 2606 having a structure in which the dielectric layer is sandwiched between the upper and lower electrode surfaces, the electrode pattern 2612 may be transferred and formed on the substrate 2610 in advance. Such a method is possible only in the case of using the transfer material of the present invention in which the capacitor is printed, which is difficult in the conventional method of printing a dielectric layer on a composite sheet made of ceramic as a filler.

By this heating and pressing treatment, the epoxy resin (the epoxy resin in the sheet-like base material and the conductive paste 261 1) in the substrate 2610 is melt-softened, and as shown in FIG. 24 (h), the circuit part pattern (inductor) (2605), capacitor (2606) and resistor (2607), and the second metal layer 2603 as the wiring pattern were buried in the substrate 2610. And the heating temperature was further raised and the said epoxy resin was hardened by processing for 60 minutes at the temperature of 175 degreeC. Thereafter, the semiconductor chip 2608 was flip chip mounted on the wiring 2613.

As a result, the sheet-like base material and the whole circuit part pattern were firmly adhered, and the conductive paste 2611 and each circuit part pattern were electrically connected (inner via connection), and firmly adhered.                     

Thereafter, by peeling the first metal layer 2601 and the release layer 2602, which are carrier layers, as shown in Fig. 24H, the circuit component pattern (inductor 2605, capacitor 2606, and resistor) on both surfaces. (2607)) and a wiring board having a wiring pattern (second metal layer 2603) was obtained. In this wiring board, a recess corresponding to the depth where the first metal layer 2603 was etched from the transfer material was formed, and all the wiring patterns and the circuit part patterns were formed in the bottom of the recess.

Moreover, by using this transfer material, when the transfer of the second metal layer 2603 or the like to the substrate 2610 is performed, the release layer 2602 between the first metal layer 2601 and the second metal layer 2603 is formed. The adhesive surface was easily peeled off, and only the second metal layer 2603 and the circuit component patterns (inductor 2605, capacitor 2606, and resistor 2608) could be transferred to the substrate.

In the present embodiment, since the first metal layer 2601, which is the carrier, is made of copper foil having a thickness of 35 µm, the carrier layer was able to withstand the strain stress even when the substrate 2610 was deformed during transfer. On the other hand, in the transfer material of the present embodiment, since the wiring portion constitutes the convex portion, the base material of the substrate 2610 is likely to flow into the concave portion of the first metal layer 2601 which is the carrier layer at the time of crimping, and the transverse portion is intended to deform the pattern. It is easy to suppress the strain stress in the direction. Therefore, the pattern deformation in the present Example was only 0.08% corresponding to the amount of curing shrinkage of the substrate.

In addition, in the present Example, although the peeling layer which consists of organic layers was used, even if plating layers, such as Ni plating layer which has a thickness of 200 nm or less, were used as a peeling layer, the same wiring pattern transfer formation could be implement | achieved.                     

In addition, flip chip mounting of the semiconductor chip 2608 on the wiring 2613 can be easily performed by positioning the bumps on the wiring 2613 formed in the recess.

The mounting positions of the circuit components were also accurate, and the circuit boards according to the exact design could be formed by collective transfer. In the wiring board of this embodiment, the bump of the semiconductor chip 2608 and the wiring 2613 are well bonded, and the capacitor 2606 mounted so as to function as a bypass capacitor of the semiconductor chip 2608 is also preferred. Functioned. Moreover, even if the capacitor high temperature load reliability test (125 degreeC, 50V, 1000 hours) was performed, the insulation resistance did not deteriorate in the dielectric layer of the capacitor | condenser 2606, and the insulation resistance of 10 ⁶ kPa or more was ensured.

The dielectric constant of the dielectric layer was 200 and the dielectric constant of the substrate layer was 8.1. The inductance of the inductor 2605 was able to secure a sufficient value of 0.5 µH or more regardless of ferrite and magnetic alloy. Moreover, with respect to the resistance value of the resistor 2607, arbitrary values of 100 kW to 1 kW were realized.

As described above, by using the transfer material of the present invention, it was possible to easily realize a circuit formation including an active component such as a wiring pattern, a semiconductor chip, and passive components such as an inductor, a capacitor, and a resistor.

(Example 14)

Using the fourth to sixth transfer materials of the present invention, a multilayer wiring substrate shown in Fig. 25 was produced using a substrate made of a composite material produced in the same manner as in Example 13. Fig. 26 is a sectional view showing the outline of the manufacturing process of each layer of the multilayer wiring board.                     

In Fig. 26, 2800A, 2800B, and 2800C represent transfer materials, respectively. The 2800A is mainly a transfer material on which the resistor 2803 is printed. The 2800B is a transfer material in which a dielectric layer which is mainly a capacitor 2804 is formed by printing. The 2800C is formed by printing a magnetic layer which is mainly an inductor 2805.

In addition, in the present embodiment, as shown in Figs. 26A to 26C, an inner via in the substrate sheet 2806 was previously filled with the conductive paste 2807. Since the detailed structure is the same as that of Example 13, it abbreviate | omits.

The wiring layer 2808 formed on the top layer of the multilayer wiring board and one electrode 2809 of the capacitor 2804 were previously formed on the substrate sheet 2806 by transfer or the like. Moreover, the transfer material used for this transfer has the same structure as the transfer material of this invention.

Conventionally, when a passive component formed by printing is incorporated in a multilayer board, a method of printing and forming individual passive components on a substrate green sheet has been adopted. However, according to this construction method, a step of several tens of micrometers in thickness occurs on the substrate surface. Therefore, if the stacking of the substrate is to be continued in several layers for multilayering, the outer peripheral end of the condenser or the like is deformed to be pressed by the pressing force during the pressurized firing, and the insulation property tends to decrease, and the short circuit of the condenser frequently occurs. did.

According to the present embodiment, as shown in Fig. 26B, the electrode 2802 formed on the transfer material 2800B while being aligned with the electrode pattern 2809 previously formed on the substrate sheet 2806 and The dielectric layer 2804 is crimped. At this time, since these electrodes 2802 and the dielectric layer 2804 are filled in the substrate sheet 2806 having excellent fluidity, as shown in Fig. 26 (b '), no step is generated on the surface. A single layer wiring board is created.

Similarly, when the transfer is performed using the transfer materials 2800A and 2800C, no step occurs at all, and flat surfaces are formed as shown in Figs. 26A and 26C, respectively.

Finally, the single-layer wiring boards shown in Figs. 26A 'to (C') and the wiring boards on which the wiring patterns are transferred are laminated on both surfaces as shown in Fig. 26D, and as described above. The sheet is cured in a batch by heat and pressure treatment. As a result, each layer in which circuit components such as an inductor, a capacitor, and a resistor are incorporated can be stacked to form a multilayer circuit board as shown in FIG. According to this embodiment, since each layer has a flat surface without a step, a lamination process can be performed easily.

As described above, since the fourth to sixth transfer materials according to the present invention can be formed by printing circuit component patterns such as inductors, capacitors, and resistors by adding them to fine wiring patterns, and transferring them collectively, these are easily and It can be mounted on the substrate accurately. In addition, since the wiring pattern and the component pattern are mounted by transfer, the wiring pattern and the component pattern are filled on the surface of each layer without generating a step. Accordingly, the subsequent lamination step can be easily performed in a state where there is no disconnection of the wiring, collapse of the pattern shape, or the like.

In addition, although the transfer material in which all the inductor, the capacitor | condenser, and the resistor were formed was illustrated in the said Embodiment 5-12 and Examples 11-14, all these components do not necessarily need to be formed.

Claims (123)

The first metal layer 101 as a carrier, The second metal layer 103 as the wiring pattern, Having at least three layers between the first metal layer and the second metal layer, the release layer 102 bonding the first metal layer and the second metal layer in a peelable state, The surface layer portions of the second metal layer 103, the peeling layer 102 and the first metal layer 101 are simultaneously etched together by a chemical etching method so that the surface layer portions of the first metal layer correspond to the wiring pattern. The convex part of the said transfer material is formed, and the said peeling layer (102) and the said 2nd metal layer (103) are formed on the said convex part area | region. The method of claim 1, Each of the first metal layer and the second metal layer, at least one metal selected from the group consisting of copper, aluminium, silver and nickel. The method according to claim 1 or 2, The first metal layer and the second metal layer transfer material, characterized in that containing a metal of the same component. The method of claim 2, The first metal layer and the second metal layer is a transfer material, characterized in that made of copper foil. The method of claim 4, wherein The release layer is a transfer material, characterized in that made of a material etched with a copper etching solution. The method according to claim 1 or 2, In the first metal layer, the height of the convex portion is a transfer material, characterized in that the range of 1 to 12㎛. The method according to claim 1 or 2, The release layer has a thickness of 1 μm or less. The method according to claim 1 or 2, The release layer is a transfer material, characterized in that the organic layer or metal plating layer. The method of claim 8, The release layer is a transfer material, characterized in that the Au plating layer. The method according to claim 1 or 2, Adhesive strength through the release layer between the first metal layer and the second metal layer is 50gf / cm or less. The method according to claim 1 or 2, The thickness of the said 1st metal layer is the range of 4-40 micrometers, and the thickness of the 2nd metal layer is 1-35 micrometers, The transfer material characterized by the above-mentioned. The method according to claim 1 or 2, And a third metal layer on the second metal layer. The method of claim 12, The thickness of the said 3rd metal layer is a range of 2-30 micrometers, The transfer material characterized by the above-mentioned. The method of claim 12, The first to the third metal layer comprises a metal of the same component. The method of claim 12, The third metal layer is a transfer material, characterized in that gold. The method of claim 12, And a fourth metal layer on the third metal layer, wherein the fourth metal layer is composed of a metal component that is chemically stable to the etching solution that corrodes the first to third metal layers. The method of claim 16, The fourth metal layer is at least one metal selected from gold, silver, nickel, tin, bismuth, lead, and copper, and the thickness of the transfer material characterized in that the range of 1 to 10㎛. The method according to claim 1 or 2, And a circuit component formed by a printing method so as to be electrically connected to the second metal layer. The method of claim 18, And the circuit component comprises at least one component selected from an inductor, a capacitor and a resistor. The method of claim 18, The circuit component is a transfer material, characterized in that composed of a material containing an inorganic filler and a resin composition. The method of claim 18, The circuit component is a transfer material, characterized in that composed of a material comprising an inorganic filler, an organic binder and a plasticizer. delete delete delete delete delete The method of claim 1, An adhesive strength between the first metal layer and the second metal layer by the release layer is in the range of 10 gf / cm or more and 50 gf / cm or less. delete delete delete The method of claim 1, The thickness of the said 1st metal layer is the range of 4-100 micrometers, and the thickness of a 2nd metal layer and a circuit component is 1-35 micrometers. The method of claim 1, Uneven portions are formed in the surface layer portion of the first metal layer, The convex portion corresponds to a wiring pattern of the second metal layer, A transfer material, wherein an upper layer is formed on the convex portion than the first metal layer. delete delete delete Forming a release layer on the first metal layer, Forming a second metal layer on the release layer; By a chemical etching method, the second metal layer, the release layer and by etching with the date and time the surface layer of the first metal layer, said second metal layer and at the same time of forming the peeling layer to the wiring pattern shape, the surface layer portion of the first metal layer The convex portion forms a concave-convex portion having a shape corresponding to the wiring pattern. The method of claim 36, After forming the second metal layer, before performing the etching, (a) forming a plating resist on the second metal layer in a state where the surface layer of the second metal layer is exposed in a wiring pattern shape, (b) forming a third metal layer by plating in a region where the second metal layer is exposed; (c) peeling off the plating resist; Thereafter, by the chemical etching, the surface layer portions of the second metal layer, the release layer, and the first metal layer in the region where the third metal layer is not formed are etched. The method of claim 37, The third metal layer is formed of a metal component that is chemically stable with respect to the etching solution used in the chemical etching method, and the third metal layer functions as an etching resist during the chemical etching. The method of claim 38, The third metal layer is formed of gold or silver. The method of claim 37, After forming the third metal layer, before peeling the plating resist, On the said 3rd metal layer, the 4th metal layer is formed with the metal component chemically stable with respect to the etching liquid used for the said chemical etching method, Thereafter, the plating resist is peeled off and the chemical etching is performed to etch the surface layer portions of the second metal layer, the peeling layer and the first metal layer in regions where the third and fourth metal layers are not formed. Method for producing a transfer material. The method of claim 40, And the fourth metal layer is formed of a metal component that is chemically stable to the etching liquid used in the chemical etching method, and the fourth metal layer functions as an etching resist during the chemical etching. The method of claim 41, wherein And the fourth metal layer is formed of gold or silver. The method according to any one of claims 36 to 42, The second metal layer is formed by an electroplating method. The method according to any one of claims 36 to 42, The first metal layer and the second metal layer is a manufacturing method of the transfer material, characterized in that made of the same metal component. The method according to any one of claims 36 to 42, The depth by which the surface layer part of the said 1st metal layer is etched by the said chemical etching method is a range of 1-12 micrometers, The manufacturing method of the transfer material characterized by the above-mentioned. The method according to any one of claims 36 to 42, And roughening the surface of said second metal layer. 47. The method of claim 46 wherein A center line average roughness of the surface of the roughened second metal layer is 2 µm or more. The method according to any one of claims 36 to 42, A circuit component is formed by a printing method so as to contact the second metal layer. The method of claim 48, The printing method is a method of manufacturing a transfer material, characterized in that the screen printing. The method of claim 48, The circuit component is formed of a material containing an inorganic filler and a resin composition. The method of claim 48, The circuit component is formed of a material comprising an inorganic filler, an organic binder and a plasticizer. delete delete delete On the first metal layer as a carrier, a release layer and a second metal layer are formed, The second metal layer and the peeling layer are processed into a wiring pattern shape, Forming a circuit component on the first metal layer by a printing method so as to be electrically connected to the second metal layer , By the chemical etching method, the second metal layer and the peeling layer are processed into a wiring pattern shape, and at the same time, the convex portions corresponding to the convex portions in the wiring pattern shape are formed in the surface layer portion of the first metal layer. Way. The method of claim 55, The circuit component is formed by screen printing. delete The method of claim 55, After forming the second metal layer, before performing the etching, (a) forming a plating resist on the second metal layer in a state where the surface layer of the second metal layer is exposed in a wiring pattern shape; (b) forming a third metal layer by plating in a region where the second metal layer is exposed; (c) peeling off the plating resist; Thereafter, by the chemical etching, the surface layer portions of the second metal layer, the release layer, and the first metal layer in the region where the third metal layer is not formed are etched. The method of claim 58, The third metal layer is formed of a metal component that is chemically stable with respect to the etching solution used in the chemical etching method, and the third metal layer functions as an etching resist during the chemical etching. The method of claim 59, The third metal layer is formed of gold or silver. The method of claim 58, After forming the third metal layer, before peeling the plating resist, On the said 3rd metal layer, the 4th metal layer is formed with the metal component chemically stable with respect to the etching liquid used for the said chemical etching method, Thereafter, the plating resist is peeled off and the chemical etching is performed to etch the surface layer portions of the second metal layer, the peeling layer and the first metal layer in regions where the third and fourth metal layers are not formed. Method for producing a transfer material. 62. The method of claim 61, The fourth metal layer is formed of a metal component that is chemically stable with respect to the etchant used in the chemical etching method, and the fourth metal layer functions as an etching resist during the chemical etching. The method of claim 62, And the fourth metal layer is formed of gold or silver. The method of claim 55, The second metal layer is formed by an electroplating method. The method of claim 55, The first metal layer and the second metal layer is a manufacturing method of the transfer material, characterized in that made of the same metal component. The method of claim 55, The depth by which the surface layer part of the said 1st metal layer is etched by the said chemical etching method is a range of 1-12 micrometers, The manufacturing method of the transfer material characterized by the above-mentioned. The method of claim 55, And roughening the surface of said second metal layer. The method of claim 67, And a center line average roughness of the surface of the roughened second metal layer is 2 µm. A wiring board having an electrically insulating substrate and a wiring pattern formed on at least one peripheral surface of the electrically insulating substrate by a transfer method using the transfer material according to claim 1 or 2, And the wiring pattern is formed in an unevenness formed on the main surface. The method of claim 69, wherein The electrically insulating substrate has a through hole filled with a conductive composition, And the wiring pattern is electrically connected to the conductive composition. The method of claim 69, wherein The depth of the recessed portion is a wiring board, characterized in that the range of 1 to 12㎛. The method of claim 69, wherein The electrically insulating substrate includes an inorganic filler and a thermosetting resin composition, and has a through hole filled with a conductive composition. The method of claim 72, The inorganic filler is at least one inorganic filler selected from the group consisting of Al ₂ O ₃ , MgO, BN, AlN and SiO ₂ , The ratio of the inorganic filler is 70 to 95% by weight, The transfer substrate wiring board, characterized in that the ratio of the thermosetting resin composition is 5 to 30% by weight. The method of claim 69, wherein The electrically insulating substrate is a wiring board comprising a thermosetting resin composition impregnated with at least one reinforcing material selected from the group consisting of a woven fabric of glass fibers, a nonwoven fabric of glass fibers, a woven fabric of heat resistant organic fibers, and a nonwoven fabric of heat resistant organic fibers. . The method of claim 69, wherein The electrically insulating substrate is a wiring board, characterized in that made of ceramic. 76. The method of claim 75, The ceramic comprises at least one component selected from the group consisting of Al ₂ O ₃ , MgO, ZrO ₂ , TiO ₂ , SiO ₂ , BeO, BN, CaO and glass, or Bi-Ca-Nb-O. Wiring board. The method of claim 69, wherein And a metal layer formed by the plating method on the wiring pattern formed in the recessed portion of the main surface by the transfer method. The method of claim 69, wherein And a semiconductor element connected to a wiring pattern formed in the recess of the main surface, wherein the semiconductor element is flip chip bonded by positioning the bump at the recess. In a multilayer wiring board having an inner via hole structure formed by stacking a plurality of wiring boards, A multilayer wiring board, comprising the wiring board according to claim 69 in at least one layer. The method of claim 79, At least one of the plurality of wiring boards is a ceramic wiring board having an electrically insulating substrate including ceramic, At least a part of the ceramic wiring board has a wiring pattern formed in a convex shape on at least one side of the main surface thereof, The wiring board laminated on the main surface on which the convex wiring pattern is formed is a composite wiring board having an electrically insulating substrate containing a thermosetting resin composition. And the convex wiring pattern is embedded in a main surface of the composite wiring board. The method of claim 80, Sintering temperature of the ceramic wiring board is a wiring board, characterized in that more than 1050 ℃. The method of claim 79, At least two of the plurality of wiring boards are ceramic wiring boards having an electrically insulating substrate including ceramics, At least one of the ceramic wiring boards includes a ceramic material of a different kind from the other ceramic wiring boards, A wiring board comprising a wiring board having an electrically insulating substrate containing a thermosetting resin composition, between ceramic wiring boards comprising different ceramic materials. The method of claim 79, At least an uppermost layer and a lowermost layer of the plurality of wiring boards are composite wiring boards having an electrically insulating substrate containing a thermosetting resin composition, A wiring board comprising a ceramic wiring board having an electrically insulating substrate including ceramics in an inner layer. delete delete delete delete delete delete delete delete delete delete delete delete In the manufacturing method of the wiring board using the transfer material of Claim 1 or 2, The side in which the wiring pattern metal layer included in the at least 2nd metal layer in the said transfer material was formed was crimped | bonded to at least one peripheral surface of the sheet-like base material of an uncured state, A method of manufacturing a wiring board, wherein the wiring pattern metal layer is transferred to the sheet-like substrate by peeling the first metal layer bonded to the second metal layer by the peeling layer from the second metal layer. 97. The method of claim 96, The sheet-like base material on which the wiring pattern metal layer has been transferred is laminated in two or more layers as it is in the uncured state to form a laminate. A method for manufacturing a wiring board, wherein the sheet-like base material of the entire laminate layer is cured as a whole. 97. The method of claim 96, The sheet-like base material comprises an inorganic filler and a thermosetting resin composition, and has a through hole filled with a conductive composition. 99. The method of claim 98, The inorganic filler is at least one inorganic filler selected from the group consisting of Al ₂ O ₃ , MgO, BN, AlN and SiO ₂ , The ratio of the said inorganic filler with respect to the said whole sheet-like base material is 70 to 95 weight%, The ratio of the said thermosetting resin composition with respect to the said whole sheet-like base material is 5 to 30 weight%, The manufacturing method of the wiring board. 97. The method of claim 96, The sheet-like base material is a wiring made by impregnating a thermosetting resin composition with at least one reinforcing material selected from the group consisting of a woven fabric of glass fibers, a nonwoven fabric of glass fibers, a woven fabric of heat resistant organic fibers, and a nonwoven fabric of heat resistant organic fibers. Method of manufacturing a substrate. 97. The method of claim 96, And said sheet-like base material comprises a polyimide. 97. The method of claim 96, The sheet-like substrate is a ceramic powder comprising an organic binder, a plasticizer, and at least one ceramic selected from the group consisting of Al ₂ O ₃ , MgO, ZrO ₂ , TiO ₂ , SiO ₂ , BeO, BN, CaO, and glass. A method of manufacturing a wiring board, characterized in that the ceramic sheet comprising a. 103. The method of claim 102, Transferring of the wiring pattern metal layer using the transfer material is performed on both main surfaces of the ceramic sheet, On both sides or one side of the ceramic sheet, a restraining sheet mainly composed of an inorganic composition which is not substantially sintered at the sintering temperature of the ceramic sheet is disposed, Firing the ceramic sheet together with the restraint sheet, And after the firing, the restriction sheet is removed to obtain a ceramic wiring board. 103. The method of claim 103, By transferring the wiring pattern metal layer using the transfer material to at least one main surface of the sheet-like base material containing a thermosetting resin composition, a composite wiring board is obtained. A method of manufacturing a wiring board, wherein the ceramic wiring board and the composite wiring board are laminated and pressed while heating to obtain a multilayer wiring board. 103. The method of claim 103, Before the transfer of the wiring pattern metal layer using the transfer material to the ceramic sheet, a through hole is formed and a conductive composition is filled in the through hole. Through-holes are formed in the ceramic sheet, On both sides of the ceramic sheet on which the through-holes are formed, a restraining sheet mainly composed of an inorganic composition which is not substantially sintered at the firing temperature of the ceramic sheet is disposed, Firing the ceramic sheet together with the restraint sheet, After firing, the restraint sheet is removed, The through hole is filled with a thermosetting conductive composition to obtain a ceramic substrate with a via conductor, The side in which the wiring pattern metal layer containing the at least 2nd metal layer in the transfer material of Claim 1 or 2 was formed was crimped | bonded to at least one peripheral surface of the uncured sheet-like base material containing a thermosetting resin composition, The wiring pattern metal layer is transferred to the sheet-like base material by peeling the first metal layer bonded to the second metal layer by the release layer from the second metal layer. Before or after the transfer, through holes are formed in the sheet-like base material containing the thermosetting resin composition, and the through holes are filled with a thermosetting conductive composition to obtain a composite wiring board with via conductors. And a multilayer wiring board is obtained by laminating the ceramic substrate and the composite wiring board and pressing the substrate while heating. 105. The method of claim 105, And a through hole for the alignment pin when the ceramic substrate and the composite wiring board are laminated at the same time when the through hole is formed in the ceramic sheet. 107. The method of claim 107, And the hole diameter of the through hole is made 2 to 10% larger than the pin diameter. 97. The method of claim 96, After the transfer of the wiring pattern metal layer using the transfer material, A plating process is performed on a wiring pattern metal layer formed on the sheet-like base material surface. delete delete delete delete delete delete delete delete delete delete delete delete delete delete

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