JP2002204049A - Transfer material and its manufacturing method as well as wiring board manufactured by using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a transfer material capable of surely and easily transferring a fine wiring pattern and a component pattern to a board. SOLUTION: The transfer material comprises a first metal layer 101 as a carrier, a second metal layer 103 to be transferred to the board as the wiring pattern, and a release layer 102 for releasably laminating the first and second metal layers of at least three layers. A ruggedness corresponding to the wiring pattern is formed on a surface layer of the layer 101, and the layer 102 and the layer 103 are formed on the protruding region.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transfer material for transferring a fine wiring pattern to a circuit component on a substrate and a method of manufacturing the transfer material. The present invention relates to a formed wiring board and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, with the demand for higher performance and smaller size of electronic equipment, higher density and higher function of semiconductors have been demanded. For this reason, a smaller and higher-density circuit board for mounting the semiconductor is required.

In response to these demands, for example, an inner via hole (IVH) connection method, which is an electric connection method between substrate layers, capable of connecting electric wiring between large-scale integrated circuits (LSI) and between mounted components in the shortest distance, Since the highest density wiring is possible, development is proceeding in various fields.

In general, examples of the wiring board having such an IVH structure include a multilayer ceramic wiring board, a multilayer printed wiring board by a build-up method, and a multilayer composite wiring board made of a mixture of a resin and an inorganic filler.

[0005] The multilayer ceramic wiring board is, for example,
It can be manufactured as shown below. First, a plurality of green sheets made of ceramic powder such as alumina, an organic binder, and a plasticizer are prepared. Then, a via hole is provided in each of the green sheets, and the via hole is filled with a conductive paste. Then, a wiring pattern is printed on the green sheets, and the green sheets are laminated. Then, the multilayer ceramic wiring board can be manufactured by removing the binder and firing the laminate. Since such a multilayer ceramic wiring board has an IVH structure, an extremely high-density wiring pattern can be formed, and is most suitable for miniaturization of electronic devices and the like.

[0006] Printed wiring boards, which simulate the structure of the multilayer ceramic wiring board, by the build-up method have been developed in various fields. For example, Japanese Patent Application Laid-Open No. Hei 9-116
No. 267, Japanese Unexamined Patent Publication No. 9-51168 and the like disclose a conventional general build-up method. In this method, a conventionally used glass-epoxy substrate is used as a core, a photosensitive insulating layer is formed on the surface of the substrate, a via hole is provided by a photolithography method, and copper plating is performed on the entire surface, and the copper A method for forming a wiring pattern by chemically etching plating is disclosed.

Japanese Patent Application Laid-Open No. 9-326562 discloses a method of filling a via hole processed by the photolithography method with a conductive paste as in the build-up method. JP-A-9-3655
No. 1, JP-A-10-51139, and the like, a conductive circuit is formed on one surface of an insulative hard base material, and an adhesive layer is formed on the other surface, and a through-hole is formed in the conductive paste. And then stacking and stacking a plurality of base materials.

Further, Japanese Patent No. 26001128 and Patent No. 2
No. 603053 and Japanese Patent No. 2587596 disclose that aramid-epoxy prepreg is provided with a through hole by laser processing, filled with a conductive paste, laminated with copper foil and patterned, and the substrate is used as a core to form a conductive layer. This is a method of further sandwiching between prepregs filled with paste to form a multilayer.

As described above, for example, if the resin-based printed wiring board is connected by IVH, the electrical connection between only the necessary layers can be performed similarly to the multilayer ceramic wiring board. Since there is no through hole in the top layer,
Excellent mountability.

However, such a resin-based printed wiring board having a high-density mounting having an IVH structure generally has low thermal conductivity, and dissipates heat generated from the component as the mounting density of the component increases. Will be difficult.

Further, in 2000, the clock frequency of the CPU became about 1 GHz, and the power consumption of the CPU became 100 to 15 per chip with the advance of its function.
It is estimated to reach 0W.

In general, a ceramic wiring board having excellent thermal conductivity is excellent in heat dissipation, but is relatively expensive, and has difficulty in drop resistance when applied to a board or module used in a portable terminal. And so on.

Therefore, the resin-based printed wiring board and the ceramic substrate are laminated for the purpose of complementing that the resin-based printed wiring board has a problem in thermal conductivity and for the purpose of forming a capacitor on the resin multilayer board. The structure
Japanese Patent No. 3063427 or JP-A-7-1428
No. 67 proposes this.

In order to enhance the thermal conductivity of the substrate itself, a multilayer composite wiring board is disclosed in Japanese Patent Application Laid-Open No. 9-270.
584, JP-A-8-125291, JP-A-8-288596, JP-A-10-173097, and the like. This multilayer composite wiring board is a board obtained by mixing a thermosetting resin such as an epoxy resin and an inorganic filler (for example, ceramic powder or the like) having excellent thermal conductivity to form a composite. Since this substrate can contain the inorganic filler in a high concentration, the thermal conductivity can be improved. Further, by selecting the type of the inorganic filler, for example, it is possible to arbitrarily control the dielectric constant, the coefficient of thermal expansion, and the like.

On the other hand, formation of a fine wiring pattern is important in promoting high-density mounting of a substrate. In the multilayer ceramic wiring board, in forming the wiring pattern,
For example, a method of screen-printing a thick-film conductive paste on a ceramic substrate and baking it by baking is generally used. However, in this screen printing method, 10
It is said that it is difficult to mass-produce a wiring pattern having a line width of 0 μm or less.

In a normal printed wiring board, for example, a method of forming a wiring pattern by a subtractive method is general. In this subtractive method, a wiring pattern is formed on a substrate by chemically etching a copper foil having a thickness of about 18 to 35 μm.
It is said that even with this method, it is difficult to mass-produce a wiring pattern having a line width of 75 μm or less, and it is necessary to make the copper foil thinner in order to further miniaturize the wiring pattern.

According to the subtractive method,
Since the wiring pattern has a structure protruding from the substrate surface, it is difficult to put solder or conductive adhesive for electrical connection on the bumps formed on the semiconductor, and the bumps are moved between the wiring patterns. May be short-circuited. Also,
Due to the protruding wiring pattern, for example, there is a possibility that it may become an obstacle when sealing with a sealing resin in a later step.

Further, in the printed wiring board by the build-up method, in addition to the subtractive method,
For example, the additive method tends to be adopted. The additive method is, for example, a method of selectively plating a wiring pattern on a substrate surface on which a resist is formed,
A wiring pattern having a line width of about 30 μm can be formed. However, this method has a problem that the adhesion strength of the wiring pattern to the substrate is weaker than the subtractive method.

Therefore, there has been proposed a method of forming a fine wiring pattern in advance, performing a pattern inspection, and then transferring only a good wiring pattern to a desired substrate. For example, US Pat. No. 5,407,511 discloses a method in which a fine pattern is previously formed on a surface of a carbon plate by printing and baking, and the fine pattern is transferred to a ceramic substrate. Also, JP-A-10-84186 and JP-A-10-41
No. 611 discloses a method of transferring a wiring pattern made of a copper foil formed on a release support plate to a prepreg. Similarly, Japanese Patent Application Laid-Open No. H11-261219 discloses a method of transferring a wiring pattern made of copper foil onto a template indicating plate made of copper foil via a nickel-phosphorus alloy release layer. I have. Also, Japanese Patent Application Laid-Open No. 8-330
Japanese Patent Application Laid-Open No. 709 discloses a method of transferring a copper foil as a wiring pattern to a substrate by utilizing the fact that the degree of adhesion on a roughened surface and a glossy surface of a copper foil is different.

The wiring pattern transferred by such a transfer method is embedded in the surface of the substrate, and the surface of the obtained wiring substrate has a flat structure. Therefore, the problem caused by the protrusion of the wiring pattern as described above is avoided. You. Further, Japanese Unexamined Patent Application Publication No.
JP-A-190191 also discloses an effect of compressing a conductive via paste filled in a through hole by the thickness of the wiring pattern when the wiring pattern is embedded in the substrate surface.

Recently, further miniaturization of the wiring pattern has been demanded. However, it is difficult to form a finer wiring pattern on the releasable support plate by the conventional wiring pattern transfer technique. is there. That is, for example, when patterning a copper foil adhered to the release support plate,
If the adhesive strength of the copper foil to the releasable support plate is weak, the fine wiring pattern will peel off at the time of chemical etching. Conversely, when the adhesive strength is high, the wiring pattern is also peeled off when the release support plate is peeled off after the wiring pattern is transferred to the substrate.
There is also a method of transferring the copper foil to the substrate by roughening the surface of the copper foil and making the adhesive strength of the copper foil to the substrate higher than the adhesive strength to the release support plate. With this method, it is difficult to form a fine wiring pattern.

Further, even if a method of forming a wiring pattern by sintering a conductive paste screen-printed on the ceramic substrate by firing, for example, is employed, there is a limit to the miniaturization of the wiring pattern. Moreover, in the sintering of a conductive paste containing a conductive powder, unlike a metal layer such as a copper foil, the electric conductivity is poor, and there is a possibility that a problem will be caused in the future increase in frequency.

On the other hand, it has been conventionally difficult to fabricate a ceramic multilayer substrate formed by wiring with a metal foil such as a copper foil. This is because it was difficult to form wiring on the green sheet with metal foil without impairing the properties of the green sheet.

When considering a method of manufacturing a resin-based printed wiring board, a laminating method using sequential lamination is generally common, and the pressing step is performed a plurality of times. For this reason, in order to realize reliable interlayer connection, complicated steps such as correction of curing shrinkage generated in each pressing step could not be avoided.

Further, the resin-based printed wiring board and the ceramic substrate are laminated for the purpose of complementing the problem of the thermal conductivity of the resin-based printed wiring board or for forming a capacitor on the resin multilayer board. The structure itself has already been proposed. However, in practice, cracks such as cracks mainly occur in the ceramic layer through the laminating step and the like, and it has been difficult to produce a resin-based and ceramic laminate.

According to the present invention, there is provided a transfer wiring pattern forming material for transferring a fine wiring pattern to a substrate in order to solve the above-mentioned conventional problems, and the transfer to the substrate can be performed easily and reliably. It is another object of the present invention to provide a low-cost transfer wiring pattern forming material.

Further, in order to advance the high-density mounting of the substrate, it is important not only to miniaturize the wiring pattern but also to how to form and mount the circuit components connected to the wiring pattern. Conventionally, passive components such as inductors, capacitors, and resistors are generally mounted so as to protrude from the substrate surface, and it has been difficult to bury them in the substrate. For this reason, there has been a limit in high-density mounting.

For example, in the conventional methods disclosed in the above-mentioned publications, the pattern formed on the transfer forming material is only a wiring portion such as a copper foil. In order to improve the mounting density, it is also possible to propose a method of mounting the passive components and the like on the transfer forming material in the form of a chip, but when embedding the passive components and the like in the substrate, disconnection of the connection portion with the wiring pattern, Various problems such as chip displacement have occurred.

Accordingly, the present invention is directed to a transfer component wiring pattern forming material for incorporating a fine wiring pattern and circuit components into a circuit board. It is another object of the present invention to provide a transfer component wiring pattern forming material that can accurately and cost-effectively be mounted on a circuit board.

Still another object of the present invention is to provide a wiring board on which a wiring pattern and circuit components are formed by using the above-mentioned transfer wiring pattern forming material or transfer component wiring pattern forming material (transfer material). And

[0031]

In order to achieve the above object, a transfer material according to a first aspect of the present invention comprises a first metal layer as a carrier and a second metal layer as a wiring pattern. A release layer interposed between the first metal layer and the second metal layer, the release layer bonding the first metal layer and the second metal layer in a releasable state; A protrusion having a shape corresponding to the wiring pattern is formed on a surface portion of the first metal layer, and the release layer and the second metal layer are formed on the protrusion region. It is characterized by the following.

The transfer material according to the second aspect of the present invention has at least two layers of a first metal layer as a carrier and a second metal layer as a wiring pattern. And a circuit component formed by a printing method so as to be electrically connected to the second metal layer.

According to the transfer material of the second configuration,
By printing, circuit components such as an inductor, a capacitor, and a resistor can be collectively formed. In particular,
It is easy to form resistors. The circuit components are not limited to these passive components, and active components such as semiconductor chips may be formed.

Further, since it is not necessary to mount circuit components using solder or the like, the mounting process can be simplified.
Further, the reliability of the wiring board can be improved by reducing the solder connection. Also, by forming circuit components on the transfer material by printing, the height of the circuit components can be reduced compared to the case where component chips are mounted by soldering. Can also be easier. Further, the circuit components can be freely arranged, and, for example, the wiring distance to a built-in capacitor or the like can be minimized, and high-frequency characteristics can be improved.

In the transfer material according to the second configuration, after the transfer, a new second metal layer, a wiring pattern, or a component pattern is formed on the first metal layer, which is a carrier that has been peeled off. Accordingly, the first metal layer can be reused, and the configuration of the wiring pattern is not particularly limited. For this reason, cost reduction can be achieved, and it is extremely useful industrially.

In order to achieve the above object, a first method of manufacturing a transfer material according to the present invention comprises forming a release layer on a first metal layer, and forming a second metal layer on the release layer. Forming the second metal layer, the release layer, and the surface portion of the first metal layer by a chemical etching method, thereby forming the second metal layer and the release layer into a wiring pattern shape. And at the surface of the first metal layer,
The projection forms an uneven portion having a shape corresponding to the wiring pattern.

According to a second method of manufacturing a transfer material of the present invention, a second metal layer is formed in a wiring pattern on a first metal layer, and is electrically connected to the second metal layer. In this case, the circuit component is formed by printing.

The second metal layer serving as a wiring pattern can be directly formed on the first metal layer serving as a carrier by using a plating method, an evaporation method, a sputtering method, or the like. When forming the second metal layer, a thin film resistor may be similarly formed by a sputtering method or the like.

Further, in a third method of manufacturing a transfer material according to the present invention, a release layer and a second metal layer are formed on a first metal layer, and the second metal layer and the release layer are connected to a wiring pattern. It is characterized in that it is processed into a shape and a circuit component is formed by printing so as to be electrically connected to the second metal layer.

Further, the wiring board according to the first configuration of the present invention is characterized in that an electrical insulating substrate and at least one principal surface of the electrical insulating substrate are transferred by a transfer method using the transfer material according to the first configuration. A wiring board provided with the formed wiring pattern, wherein the wiring pattern is formed in a recess formed in the main surface.

The wiring board according to the second configuration of the present invention comprises:
A multilayer wiring board having an inner via hole structure formed by laminating a plurality of wiring boards, wherein at least one
The wiring board according to the above configuration is provided.

Further, the wiring substrate according to the third configuration of the present invention is characterized in that an electrical insulating substrate and at least one principal surface of the electrical insulating substrate are transferred by a transfer method using the transfer material according to the second configuration. It is characterized by comprising a formed wiring pattern and a circuit component, wherein the circuit component is electrically connected to the wiring pattern, and the circuit component and the wiring pattern are embedded in the main surface.

The wiring board according to the fourth structure of the present invention comprises:
A multilayer wiring board having an inner via hole structure formed by laminating a plurality of wiring boards, wherein at least one
The wiring board according to the above configuration is provided.

Further, a first method of manufacturing a wiring board according to the present invention is a method of manufacturing a wiring board using the transfer material according to the first configuration, wherein at least the second material in the transfer material is used.
The side where the wiring pattern metal layer including the metal layer is formed,
Pressure bonding to at least one main surface of an uncured sheet-like base material, and peeling off the first metal layer bonded to the second metal layer by the release layer from the second metal layer. Thus, the wiring pattern metal layer is transferred to the sheet-like base material.

According to a second method of manufacturing a wiring board of the present invention, a through hole is formed in a ceramic sheet, and both surfaces of the ceramic sheet having the through hole are substantially sintered at a sintering temperature of the ceramic sheet. A constraining sheet mainly composed of an inorganic composition that does not shrink and shrink is disposed, the ceramic sheet is fired together with the constraining sheet, and after firing, the constraining sheet is removed, and a thermosetting conductive composition is formed in the through-hole. A ceramic substrate with a via conductor is obtained by filling, and the side on which the wiring pattern metal layer including at least the second metal layer in the transfer material according to the first configuration is formed contains the thermosetting resin composition The uncured sheet-shaped substrate is pressure-bonded to at least one main surface, and the second layer is formed by the release layer.
By peeling the first metal layer bonded to the metal layer from the second metal layer, the wiring pattern metal layer is transferred to the sheet-like substrate, and before or after the transfer Forming a through-hole in a sheet-like substrate containing the thermosetting resin composition, filling the through-hole with a thermosetting conductive composition, and obtaining a composite wiring board with a via conductor; A multilayer wiring board is obtained by laminating a board and the composite wiring board and pressing them together while heating.

A third method of manufacturing a wiring board according to the present invention is a method of manufacturing a wiring board using the transfer material according to the second configuration, wherein at least a second metal layer and the circuit in the transfer material are provided. The side on which the component is formed is pressed against at least one main surface of the uncured insulating sheet-like base material, and the first metal layer is peeled off. A second metal layer and the circuit component are transferred.

According to a fourth method of manufacturing a wiring board of the present invention, a through hole is formed in a ceramic sheet, and both surfaces of the ceramic sheet having the through hole are substantially sintered at a sintering temperature of the ceramic sheet. A constraining sheet mainly composed of an inorganic composition that does not shrink and shrink is disposed, the ceramic sheet is fired together with the constraining sheet, and after firing, the constraining sheet is removed, and a thermosetting conductive composition is formed in the through-hole. A ceramic substrate with a via conductor is filled, and the side of the transfer material according to the second configuration, on which the wiring pattern metal layer including at least the second metal layer is formed, contains the thermosetting resin composition The uncured sheet-shaped substrate is pressure-bonded to at least one main surface, and the second layer is formed by the release layer.
By peeling the first metal layer bonded to the metal layer from the second metal layer, the wiring pattern metal layer is transferred to the sheet-like substrate, and before or after the transfer Forming a through-hole in a sheet-like substrate containing the thermosetting resin composition, filling the through-hole with a thermosetting conductive composition, and obtaining a composite wiring board with a via conductor; A multilayer wiring board is obtained by laminating a board and the composite wiring board and pressing them together while heating.

If the transfer material according to the second configuration is used, the circuit components can be transferred to any layer of the multilayer substrate, and the location of the components can be freely set. To improve.

[0049]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) A schematic configuration example of a first embodiment (hereinafter, referred to as a first transfer material) of a transfer wiring pattern forming material according to the present invention is shown in FIG. Shown in the figure.

As shown in the figure, the first transfer material has a first metal layer 101 in which a surface portion has an uneven portion (for example, the height of the convex portion is about 1 to 12 μm). In the first metal layer 101, the protrusion has a shape corresponding to the wiring pattern. A release layer 102 made of an organic layer or a metal plating layer and a second metal layer 103
Are formed. That is, in the first transfer material, the first metal layer 101 and the second metal layer 103 are separated from each other by the release layer 10.
It is a three-layer structure bonded through the two layers.

In the first transfer material, the second metal layer 10
Reference numeral 3 denotes a wiring pattern, and the first metal layer 101 functions as a carrier for transferring the wiring pattern to a substrate. That is, the first metal layer 101 is separated from the substrate together with the separation layer 102 after transferring the second metal layer 103 as a wiring pattern to the substrate.

The method of manufacturing the first transfer material includes, for example,
(A) A three-layer structure in which a second metal layer containing a metal having the same component as the first metal layer is formed on the first metal layer via a release layer formed of an organic layer or a metal plating layer And (b) processing the surface layer portion of the first metal layer as well as the second metal layer and the release layer into a wiring pattern shape by a chemical etching method, thereby forming a surface layer portion of the first metal layer. Forming a concavo-convex portion on the substrate.

According to this manufacturing method, the second metal layer can be formed into a fine wiring pattern by using chemical etching such as photolithography. Further, the metal foil constituting the wiring pattern (second metal layer) contains the same material as the metal foil constituting the carrier (first metal layer), so that the carrier is constituted by one etching process. In the first metal layer, the concavo-convex pattern having the same pattern as the wiring pattern of the second metal layer can be formed.

Further, the first transfer material of the present embodiment reuses the first metal layer which is peeled off after use, and uses the second metal layer having the same shape as the convex portion of the first metal layer. The same transfer material can be reproduced by forming through a release layer such as a plating layer. Alternatively, the first metal layer can be applied to other uses such as a pattern forming material for letterpress printing. Therefore, since the first transfer material of the present embodiment can effectively use resources, it is extremely advantageous in saving resources and reducing waste. This is
The same applies to each transfer material described in another embodiment described later.

Note that an inductor, a capacitor, and a capacitor are electrically connected to the wiring pattern of the transfer material of the present embodiment.
It is also possible to form a circuit component such as a resistor or a semiconductor element and transfer it to a substrate together with a wiring pattern. In addition,
Passive components such as inductors, capacitors, and resistors
It is preferable to form on the transfer material by a printing method such as screen printing.

(Embodiment 2) Next, a schematic configuration of an example of a transfer material according to a second embodiment of the present invention (hereinafter, referred to as a second transfer material) is shown in a sectional view of FIG.

As shown in FIG. 2, the second transfer material has a first metal layer 101 having an uneven portion formed on a surface layer.
The projection has a shape corresponding to the wiring pattern. Second
Is a four-layered material in which a release layer 102 made of an organic layer or a metal plating layer and a second metal layer 103 are formed on the convex region, and a third metal layer 104 is further formed thereon. Structure. That is, the first metal layer 101 and the second
The metal layer 103 is bonded via the release layer 102.

In the second transfer material, the second metal layer 10
The third and third metal layers 104 are wiring patterns having a two-layer structure, and the first metal layer 101 functions as a carrier for transferring the wiring pattern to a substrate. That is, the first metal layer 101 is separated from the substrate together with the separation layer 102 after transferring the second metal layer 103 and the third metal layer 104, which are wiring patterns, to the substrate.

The method of manufacturing the second transfer material includes, for example,
(A) A second metal layer containing a metal of the same component as the first metal layer is formed on the first metal layer via a peeling layer formed of an organic layer or a metal plating layer to form a three-layer structure. Forming; and (b) forming a plating resist in an arbitrary region on the second metal layer so that an exposed region not covered with the plating resist has a wiring pattern shape. (C) forming, by pattern plating, a third metal layer made of a plating layer on the exposed region of the wiring pattern on the surface of the second metal layer; Removing the resist to form the third metal layer on the convex portion of the wiring pattern on the second metal layer; and (e) performing the chemical etching method to form the third metal layer. Of the second metal layer in a region where no is formed A release layer, and an upper portion of the first metal layer, and a step of selectively removing.

In this manufacturing method, when a metal of the same component as the second metal layer is used as the third metal layer, for example, a copper plating layer (third metal layer) is formed on a copper foil (second metal layer). When the second metal layer is formed, the second and third metal layers can be formed in a fine wiring pattern because the same reason as in the first embodiment and the additive method are employed.

Further, since the second metal layer and the peeling layer are thinner than the third metal layer, they can be removed by a short etching process, and basically, the thickness of the third metal layer is reduced. Can be left with little reduction. Therefore,
The thickness of the wiring pattern can be arbitrarily controlled.

On the other hand, when a third metal layer is formed by pattern plating a metal different from the second metal layer, for example, gold (third metal layer) on a copper foil (second metal layer). Since the third metal layer functions as an etching resist, the upper portions of the second metal layer, the release layer, and the first metal layer in a region where the third metal layer having the wiring pattern shape is not formed are formed. , Can be selectively removed. Furthermore, if gold is used for the third metal layer, the uppermost layer of the wiring pattern of the transfer material is gold.
If a (filter surface acoustic wave filter) or the like is flip-chip mounted on the wiring pattern, a stable connection with low resistance can be obtained. Note that the same effect can be obtained when silver is used for the third metal layer.

In the manufacturing method, it is preferable that a surface of the second metal layer is roughened before forming a third metal layer on the second metal layer. The “before forming the third metal layer” means before forming a mask (the plating resist) for forming a wiring pattern on the second metal layer, or the first mask formed in the wiring pattern shape. 2 on the metal layer along the wiring pattern,
Before forming the third metal layer. As described above, when the second metal layer is subjected to a surface roughening treatment, the adhesion between the second metal layer and the third metal layer is improved.

In the manufacturing method, it is preferable that the third metal layer is formed on the second metal layer by an electrolytic plating method. If the third metal layer or the metal layer for forming the wiring pattern is formed by the electroplating method, the adhesive surface between the second metal layer and the third metal layer has an appropriate adhesive property. In addition to the above, since no gap is generated between the metal layers, a good wiring pattern can be formed even if, for example, etching is performed. On the other hand, the second
After the third metal layer is formed on the metal layer by panel plating, masking may be performed on the wiring pattern to form a pattern. In this case, it is effective in preventing surface oxidation of the second metal layer after transfer and improving solder wettability.

In the above manufacturing method, it is preferable that the second and third metal layers, including the surface portion of the first metal layer, are processed into a wiring pattern by a chemical etching method.

In the above-mentioned manufacturing method, for the same reason as described above, the second metal layer contains at least one metal selected from the group consisting of copper, aluminum, silver and nickel, and particularly contains copper. preferable. The first metal layer is
Simultaneously with the etching of the second metal layer by chemical etching, a convex portion having the same shape as the wiring pattern (second metal layer) is formed on the surface layer portion, and thus has the same metal component as the second metal layer. Is desirable. Among them, it is preferable that the first and second metal layers are made of copper foil,
Particularly preferred is an electrolytic copper foil.

The method for forming the first and second metal layers is not particularly limited, and may be, for example, a known metal foil manufacturing method.

As the surface roughening treatment, for example, a blackening treatment, a soft etching treatment, a sand blasting treatment and the like can be adopted.

Note that an inductor, a capacitor, and a capacitor are electrically connected to the wiring pattern of the transfer material of the present embodiment.
It is also possible to form a circuit component such as a resistor or a semiconductor element and transfer it to a substrate together with a wiring pattern. In addition,
Passive components such as inductors, capacitors, and resistors
It is preferable to form on the transfer material by a printing method such as screen printing.

(Embodiment 3) Next, a schematic configuration of an example of a transfer material according to a third embodiment of the present invention (hereinafter, referred to as a third transfer material) is shown in a sectional view of FIG.

As shown in the drawing, the third transfer material has a first metal layer 101 in which a surface portion has an uneven portion. The projection has a shape corresponding to the wiring pattern. In the third transfer material, a release layer 102 made of an organic layer or a metal plating layer and a second metal layer 103 are formed on the convex region, and a third metal layer 104 is further formed thereon. And a five-layer structure on which a fourth metal layer 105 is formed. The first metal layer 101 and the second metal layer 103 are attached to each other with a release layer 102 interposed therebetween.

In the third transfer material, the second metal layer 10
3, the third metal layer 104, and the fourth metal layer 105
Are wiring patterns of a three-layer structure. First metal layer 10
1 functions as a carrier for transferring the wiring pattern to a substrate. That is, the first metal layer 101
After transferring the second metal layer 103, the third metal layer 104, and the fourth metal layer 105, which are wiring patterns, to the substrate, the substrate is peeled off from the substrate together with the peeling layer.

The method for manufacturing the third transfer material is, for example, as follows. (A) forming a second metal layer containing a metal of the same component as the first metal layer on the first metal layer via a release layer,
Forming a layer structure; and (b) forming a plating resist in an arbitrary region on the second metal layer so that an exposed region not covered with the plating resist has a wiring pattern shape. (C) forming a third metal layer made of a plating layer on the exposed area of the wiring pattern in the second metal layer; and (d) forming the third metal layer.
A metal component that is different from the first to third metal layers on the metal layer and is chemically stable to an etchant that corrodes the first to third metal layers. 4th
(E) removing the plating resist to form two third and fourth metal layers on the protrusions of the wiring pattern, and (f) removing the plating resist. Selectively etching the upper portions of the second metal layer, the release layer, and the first metal layer in a region where the third and fourth metal layers having the wiring pattern shape are not formed by a selective etching method. Removing.

According to this manufacturing method, since the same reason as described above and the additive method are employed, a fine wiring pattern can be formed. Further, the thickness of the wiring pattern can be arbitrarily controlled.

In the manufacturing method, it is preferable that the surface of the second metal layer is subjected to a roughening treatment before forming the third metal layer on the second metal layer. Before forming the third metal layer means before forming a wiring pattern forming mask on the second metal layer, or on the second metal layer masked in the wiring pattern shape. Before the third metal layer is formed along the wiring pattern.
As described above, when the second metal layer is subjected to a surface roughening treatment, the adhesion between the second metal layer and the third metal layer is improved.

In the manufacturing method, it is preferable that the third metal layer is formed on the second metal layer by an electrolytic plating method. If the third metal layer or the metal layer for forming the wiring pattern is formed by the electroplating method, the adhesive surface between the second metal layer and the third metal layer has an appropriate adhesive property. In addition to the above, since no gap is generated between the metal layers, a good wiring pattern can be formed even if, for example, etching is performed.

On the other hand, after the third metal layer is formed on the second metal layer by panel plating, the pattern may be formed by masking the wiring pattern. in this case,
This is effective in preventing surface oxidation of the second metal layer after transfer and improving solder wettability.

Further, in the manufacturing method, the third
The fourth metal layer formed on the above metal layer is preferably formed by an electrolytic plating method. As a material of the fourth metal layer, a component different from the first to third metal layers, that is,
By selecting a metal component that is chemically stable with respect to the etching solution that corrodes the first to third metal layers, the second, third, and fourth chemical etching methods of step (f) can be used.
Of the first metal layer without reducing its thickness.
It can be processed into a wiring pattern together with the surface portion of the metal layer, which is preferable.

In the above-described manufacturing method, for the same reason as described above, the second and third metal layers contain at least one metal selected from the group consisting of copper, aluminum, silver and nickel. It is preferred to include. The first metal layer is formed by forming a protrusion having the same shape as the wiring pattern (second metal layer) on the surface layer of the first metal layer simultaneously with the etching of the second metal layer by chemical etching. It is desirable to have the same metal component as the layer. Among them, for example, these metal layers are preferably made of copper foil, and particularly preferably electrolytic copper foil. On the other hand, as the fourth metal layer, for example, an Ag or Au plating layer which is chemically stable and has low resistance is desirable.

The method for forming the first and second metal layers is not particularly limited, and may be, for example, a known metal foil manufacturing method.

As the surface roughening treatment, for example, a blackening treatment, a soft etching treatment, a sand blast treatment or the like can be adopted.

Note that the first,
In the second and third transfer materials, the adhesive strength between the first metal layer and the second metal layer via the release layer is weak;
For example, it is preferably at most 50 N / m (gf / cm). As the release layer, an organic layer having an adhesive force and much thinner than 1 μm, for example, a thermosetting resin such as a urethane resin, an epoxy resin, or a phenol resin can be used, but is not limited thereto. A plastic resin or the like may be used. However, when the thickness is more than 1 μm, the peeling performance is deteriorated, and the transfer may be difficult.

In the first to third transfer materials, a plating layer may be interposed as a release layer for the purpose of intentionally lowering the adhesive strength. For example, a metal plating layer, a nickel plating layer, a nickel-phosphorus alloy layer, an aluminum plating layer, a chromium plating layer, or the like much thinner than 1 μm is provided between the copper foil (first and second metal layers) as a release layer. It is also possible to have releasability by interposing. Thereby, after transferring the second metal layer to the substrate, the second metal layer is easily separated from the first metal layer, and it is easy to transfer only the second metal layer to the substrate. become. When the release layer is formed of a metal plating layer,
A thickness level of m to 1 μm is sufficient, and the thicker the film, the higher the cost in the process.

In the first to third transfer materials, if the release layer is intentionally formed by Au plating so as to be easily separated from the first metal layer, the first metal layer is transferred to the substrate after the transfer. When peeling off from the wiring pattern, the peeling layer remains on the surface of the second metal layer of the wiring pattern. As a result, a wiring pattern whose surface is plated with Au is obtained, which is excellent in FC mounting (flip chip mounting), component mounting, and the like.

In the first to third transfer materials,
The first metal layer preferably contains at least one metal selected from the group consisting of copper, aluminum, silver and nickel, and particularly preferably contains copper. Like the first metal layer, the second metal layer preferably contains at least one metal selected from the group consisting of copper, aluminum, silver, and nickel, and particularly preferably contains copper. The metal may be one kind, or two or more kinds may be used in combination.

Further, in the first to third transfer materials, for example, when etching or the like is performed, the metal layers having the two-layer structure can be easily processed at the same time. It is preferred that the layers contain the same constituent metals. In this case, since there is no difference in thermal expansion coefficient between the first metal layer and the second metal layer, pattern distortion hardly occurs at the time of heating, which is suitable for transferring a fine wiring pattern. In addition,
When a plating layer is used as the peeling layer, it is desirable that processing can be performed with a copper etching solution. Further, as long as the metal of the same component is included, the type of the metal is not particularly limited,
It is preferably made of a copper foil, and particularly preferably an electrolytic copper foil because of its excellent conductivity. The metal may be used alone or in combination of two or more.

Further, in the first to third transfer materials,
The center line average roughness (Ra) of the surface of the second metal layer is:
It is preferably at least 2 μm, particularly preferably 3 μm.
μm or more. In the case of the first transfer material, if the center line average roughness is smaller than 2 μm, there is a possibility that the adhesiveness to the substrate to be transferred becomes insufficient. On the other hand, in the second and third transfer materials, if the center line average roughness is smaller than 2 μm, the adhesiveness between metal layers constituting a multilayer wiring pattern becomes insufficient. For example, when the metal layer is etched, In such a case, an etching solution may enter the gaps between the metal layers, resulting in a defective wiring pattern.

Further, in the first to third transfer materials,
The thickness of the second metal layer is preferably in the range of 1 to 18 μm, particularly preferably in the range of 3 to 12 μm. If the thickness is less than 3 μm, the second metal layer may not show good conductivity when transferred to a substrate, and if the thickness is more than 18 μm, a fine wiring pattern may be formed. This can be difficult.

Further, in the first to third transfer materials,
The thickness of the first metal layer is preferably in the range of 4 to 40 μm, particularly preferably in the range of 20 to 40 μm. The first metal layer functions as a carrier, but has a structure in which the surface layer is etched and has irregularities similarly to the wiring layer. Therefore, the first metal layer is preferably a metal layer having a sufficient thickness. In addition, the first to third transfer materials have sufficient mechanical strength and heat resistance against thermal distortion and stress in the plane direction generated during transfer by using a metal layer (first metal layer) as a carrier. Is shown.

The total thickness of the first to third transfer materials is
Usually, it is in the range of 40 to 150 μm, preferably 4
The range is from 0 to 80 μm. Further, the line width of the wiring pattern is usually required to be as fine as about 25 μm, and such a line width is also preferable in the present invention.

Note that an inductor, capacitor, and the like are electrically connected to the wiring pattern of the transfer material of the present embodiment.
It is also possible to form a circuit component such as a resistor or a semiconductor element and transfer it to a substrate together with a wiring pattern. In addition,
Passive components such as inductors, capacitors, and resistors
It is preferable to form on the transfer material by a printing method such as screen printing.

(Embodiment 4) In this embodiment, a method of manufacturing a wiring board using the various transfer wiring pattern forming materials (first to third transfer materials) of the present invention, and manufacturing by the manufacturing method. The configuration of the wiring board to be performed will be described.

As a method of manufacturing a wiring board using a transfer material according to the present invention, for example, there are the following two manufacturing methods.

First, the first manufacturing method is as follows: (h) preparing at least one of the first to third transfer materials described in the first to third embodiments, and preparing the transfer material on the wiring layer side (the second metal); (A side on which a layer or the like is formed) so as to be in contact with at least one surface of a sheet-like base material (substrate material), and bonding them together; Transferring the wiring layer only to the sheet-like base material by peeling the layer.

Thus, a wiring substrate in which a fine wiring pattern is formed in a concave shape on the sheet-like base material can be manufactured. In addition, since the wiring portion of the wiring substrate has a concave shape, the concave portion can be used for positioning, and is excellent in, for example, flip-chip mounting of a semiconductor.

The second manufacturing method is a method of manufacturing a multilayer wiring board, which includes a step of laminating two or more wiring boards obtained by the first manufacturing method. According to the first manufacturing method, the transfer pattern of the wiring pattern can be formed at a low temperature of 100 ° C. or less. The sheet can be maintained in an uncured state even after performing the above.
Thereby, after laminating the wiring boards in an uncured state, it is possible to simultaneously perform thermosetting shrinkage. Therefore, as compared with the conventional method of manufacturing a multilayer wiring board, the steps of laminating wiring boards one by one and repeating the process of curing and shrinking are repeated, even in the case of a multilayer wiring board having four or more layers, the curing shrinkage of each layer is reduced. There is an advantage that no correction is required. Further, the steps can be simplified.

Thus, a multilayer wiring board having a fine wiring pattern can be manufactured. However, in the multilayer wiring board, a wiring pattern formed on an inner wiring board is
It need not be concave. Therefore, the transfer material for forming this wiring pattern does not need to have the surface layer portion of the first metal layer formed in an uneven shape, and may be flat. In this case, for example, by controlling the chemical etching time when forming the wiring pattern shape, it is possible to stop the processing at the stage when the etching is performed up to the separation layer and to prevent the first metal layer from being etched. . Also, for example,
When the release layer is a Ni-based plating layer, if a base-based solution obtained by adding ammonium ions to an aqueous solution of copper chloride is used as an etchant, only the copper foil (wiring pattern) portion is removed by etching to leave the release layer. Can be. This transfer material is carrier copper foil (first metal layer) after being pressed against the substrate.
When peeling, the plating layer, which is a peeling layer, is also peeled at the same time, so that there is no problem in transfer.

When the first transfer material is used,
By pressing the first transfer material against the sheet-shaped substrate (substrate material), the convex portions of the second metal layer and the first metal layer are embedded in the sheet-shaped substrate. Thereafter, by peeling the first metal layer, a wiring substrate having a concave portion on the surface and a wiring layer made of the second metal layer at the bottom of the concave portion is manufactured.

When the second transfer material is used, for example, the second and third metal layers and the first and second metal layers are pressed by pressing the second transfer material on a sheet-like base material. After the convex part of the metal layer is embedded in the sheet-like substrate,
The first metal layer is removed. Thereby, on the surface,
A wiring having a concave portion having a depth substantially equal to the thickness of the convex portion of the first metal layer, and a wiring layer having a two-layer structure including the second and third metal layers formed at the bottom of the concave portion; It becomes a substrate.

Similarly, when the third transfer material is used, for example, the entirety of the second, third, and fourth metal layers and the projections of the first metal layer are embedded in a sheet-like base material. After that, the first metal layer is removed. Accordingly, a three-layer structure including a concave portion on the surface having a depth substantially equal to the thickness of the convex portion of the first metal layer, and the second, third, and fourth metal layers at the bottom of the concave portion Is a wiring substrate having the wiring layer formed thereon.

In the first and second methods of manufacturing a wiring board, the sheet-like base material includes an inorganic filler and a thermosetting resin composition, and has at least one through hole. Preferably, the holes are filled with a conductive paste. This makes it possible to easily obtain a high-density mounting composite wiring board having an IVH structure, which has excellent thermal conductivity, for example, in which wiring patterns on both surfaces of the substrate are electrically connected by the conductive paste. In addition, when this sheet-shaped base material is used, high-temperature processing is not required when a wiring substrate is manufactured. For example, low-temperature processing at about 200 ° C., which is the curing temperature of a thermosetting resin, is sufficient.

The sheet-like substrate preferably has an inorganic filler content of 70 to 95% by weight, and a thermosetting resin composition content of 5 to 30% by weight, particularly preferably the inorganic filler. Is 85 to 90% by weight, and the ratio of the thermosetting resin composition is 10 to 15% by weight.
It is. Since the sheet-like base material can contain the inorganic filler at a high concentration, it is possible to arbitrarily set a coefficient of thermal expansion, a thermal conductivity, a dielectric constant, and the like in the wiring board according to the content.

The inorganic filler is Al ₂ O ₃ , MgO,
It is preferable that at least one inorganic filler selected from the group consisting of BN, AlN and SiO ₂ is used.
By appropriately determining the type of the inorganic filler, it is possible to set, for example, thermal conductivity, thermal expansion, and dielectric constant to desired conditions. For example, it is possible to set the thermal expansion coefficient in the planar direction of the sheet-like base material to be substantially the same as the thermal expansion coefficient of the semiconductor to be mounted, and to impart high thermal conductivity.

Among the inorganic fillers, for example, Al
A sheet-like substrate using ₂ O ₃ , BN, AlN or the like has excellent thermal conductivity, and a sheet-like substrate using MgO has excellent thermal conductivity and a large thermal expansion coefficient. When SiO ₂ , particularly amorphous SiO _2, is used, a light, low-permittivity sheet-like substrate having a small coefficient of thermal expansion can be obtained. The inorganic filler may be of one type or two or more types may be used in combination.

The sheet-like substrate containing the inorganic filler and the thermosetting resin composition can be produced, for example, as follows. First, a viscosity adjusting solvent is added to a mixture containing the inorganic filler and the thermosetting resin composition to prepare a slurry having an arbitrary slurry viscosity. As the viscosity adjusting solvent, for example, methyl ethyl ketone, toluene and the like can be used.

Then, on the release film prepared in advance, a film is formed using the slurry by, for example, a doctor blade method or the like, and is treated at a temperature lower than the curing temperature of the thermosetting resin to obtain the viscosity. After the solvent for adjustment is volatilized, the release film is removed to obtain a sheet-like substrate.

The film thickness at the time of forming the film is appropriately determined depending on the composition of the mixture and the amount of the viscosity adjusting solvent to be added, and is usually in the range of 80 to 200 μm.
The conditions for volatilizing the viscosity adjusting solvent are appropriately determined depending on, for example, the type of the viscosity adjusting solvent and the type of the thermosetting resin.
C. for 5-15 minutes.

As the release film, generally, an organic film can be used. For example, at least one selected from the group consisting of polyethylene, polyethylene terephthalate, polyethylene naphthalate, polyphenylene sulfide (PPS), polyphenylene terephthalate, polyimide and polyamide An organic film containing one resin is preferable, and PPS is particularly preferable.

Further, another sheet-like base material is obtained by impregnating a sheet-like reinforcing material with a thermosetting resin composition,
There is a sheet-like base material having at least one through hole, and the through hole is filled with a conductive paste.

The sheet-like reinforcing material is not particularly limited as long as it is a porous material capable of holding the thermosetting resin. However, a woven fabric of glass fiber, a non-woven fabric of glass fiber, a woven fabric of heat-resistant organic fiber and a heat-resistant organic fiber can be used. It is preferable that the material is at least one sheet-like reinforcing material selected from the group consisting of nonwoven fabrics of organic fibers. Examples of the heat-resistant organic fiber include wholly aromatic polyamide (aramid resin), wholly aromatic polyester, polybutylene oxide and the like, and among them, aramid resin is preferable. Another preferred sheet substrate is a film such as a polyimide. When a film such as polyimide is used, a substrate excellent in fine-line fine vias and the like can be obtained.

The thermosetting resin is not particularly limited as long as it has heat resistance, but is selected from the group consisting of an epoxy resin, a phenol resin, a cyanate resin, and a polyphenylene phthalate resin because of its excellent heat resistance. It is preferable to include at least one resin.
Further, the thermosetting resin may be any one type, or two or more types may be used in combination.

Such a sheet-like substrate can be produced, for example, by immersing the above-mentioned sheet-like reinforcing material in the above-mentioned thermosetting resin composition, followed by drying to obtain a semi-cured state. It is preferable that the immersion is performed such that the ratio of the thermosetting resin in the entire sheet-shaped substrate is 30 to 60% by weight.

In the method for manufacturing a multilayer wiring board, when a sheet-like base material containing a thermosetting resin as described above is used, the lamination of the wiring boards is performed by heating and pressing the thermosetting resin. It is preferable to carry out by curing. According to this, in the laminating step of the wiring board,
For example, a low-temperature treatment of about 200 ° C., which is the curing temperature of the thermosetting resin, is sufficient.

Further, as another sheet-like base material,
A green sheet including an organic binder, a plasticizer, and a ceramic powder, having at least one through hole,
Some of the through holes are filled with a conductive paste. This sheet-shaped base material has high heat resistance, good airtightness, and excellent heat conductivity.

The ceramic powder is composed of Al ₂ O ₃ , Mg
O, ZrO ₂ , TiO ₂ , BeO, BN, SiO ₂ , Ca
It preferably contains at least one ceramic selected from the group consisting of O and glass, particularly preferably 50 to 55% by weight of Al ₂ O ₃ and 45 to 50% of glass powder.
% By weight. The ceramics may be of one type, or two or more types may be used in combination.

As the organic binder, for example, polyvinyl butyrate (PVB), acrylic resin, methyl cellulose resin and the like can be used. As the plasticizer, for example, butyl benzyl phthalate (BBP), dibutyl phthalate (DBP) and the like can be used. Can be used.

Such a green sheet containing the ceramic powder and the like can be produced, for example, in the same manner as the above-mentioned method for producing a sheet-like base material containing the inorganic filler and the thermosetting resin. Note that each processing condition is appropriately determined depending on the type of the constituent material and the like.

In the method of manufacturing a multilayer wiring board, when the green sheet is used as the sheet-like base material, the wiring board is laminated by bonding the sheet-like base material by heating and pressing, and by sintering the ceramic powder. And sintering.

The thickness of the above-mentioned sheet-like substrate is as follows:
Usually, it is in the range of 30 to 250 μm.

It is preferable that the sheet-like substrate has at least one through hole as described above, and the through hole is filled with a conductive paste. The position of the through-hole is not particularly limited as long as it is formed so as to be in contact with the wiring pattern.
It is preferable to form them at equal intervals of m.

The size of the through hole is not particularly limited, but is usually in the range of 100 to 200 μm in diameter, and preferably in the range of 100 to 150 μm in diameter.

The method of forming the through holes is appropriately determined depending on the type of the sheet-like base material and the like, and examples thereof include carbon dioxide laser processing, processing by a punching machine, and collective processing by a mold.

The conductive paste is not particularly limited as long as it has conductivity, but usually a resin containing particles of a conductive metal material can be used. As the conductive metal material, for example, copper, silver, gold, silver palladium, or the like can be used. As the resin, a thermosetting resin such as an epoxy resin, a phenol resin, or an acrylic resin can be used. Further, the content of the conductive metal material in the conductive paste is usually in the range of 80 to 95% by weight.
When the sheet-like base material is a ceramic green sheet, glass and an acrylic binder are used instead of the thermosetting resin.

Next, the method of bonding the transfer material and the sheet-like substrate in the step (h) and the method of peeling the first metal layer from the second metal layer in the step (i) are as follows:
Although not particularly limited, when the sheet-like substrate contains a thermosetting resin, for example, it can be performed as described below.

First, the transfer material and the sheet-like base material are arranged as described above, and these are heat-pressed to melt-soften the thermosetting resin in the sheet-like base material. A metal layer (a second metal layer or the like) for forming a wiring pattern is buried in the sheet-like base material. Subsequently, these are treated at the softening or curing temperature of the thermosetting resin, and in the latter case, the resin is cured. Thereby, the transfer material and the sheet-shaped base material can be bonded, and the bonding between the second metal layer and the sheet-shaped base material is also fixed.

The heating and pressing conditions are not particularly limited as long as the thermosetting resin is not completely cured, but usually, the pressure is about 9.8 × 10 ^{5 to} 9.8 × 10 ⁶ Pa (10 to 10 × 10 ⁶ Pa).
100 kgf / cm ² ), temperature 70 to 260 ° C., time 3
0-120 minutes.

After the transfer material and the sheet-like base material are adhered to each other, for example, the first metal layer serving as the carrier layer is pulled and peeled in a peeling layer, thereby removing the second metal layer from the second metal layer. The first metal layer can be peeled.
That is, the first metal layer and the second metal
Since the adhesive strength between the first metal layer and the second metal layer is weaker than the adhesive strength between the sheet-shaped substrate and the second metal layer serving as the wiring layer, After peeling, only the second metal layer is transferred to the sheet-like substrate, and the first metal layer is peeled. The curing of the thermosetting resin may be performed after the first metal layer is separated from the second metal layer.

On the other hand, when the sheet-like base material is a green sheet containing the ceramic, it can be carried out, for example, as follows. As before,
By performing the heating and pressurizing treatment, the metal layer forming the wiring pattern can be buried in the sheet-like substrate, and the sheet-like substrate and the transfer material can be bonded. Then, as before,
By the peeling, constituent materials of the transfer material other than the wiring layer (the second metal layer or the like) are removed. Then, on both surfaces or one surface of the green sheet to which the second metal layer or the like forming the wiring pattern is transferred, a constraint mainly composed of an inorganic composition that does not substantially shrink at the sintering temperature of the green sheet. After arranging and laminating the sheets, binder removal processing and firing processing are performed. Further, thereafter, the constraining sheet is removed, and a ceramic substrate having a wiring pattern formed of a second metal layer or the like can be formed.

The heating and pressing conditions performed in the transfer are as follows:
For example, it is appropriately determined according to the type of the thermosetting resin contained in the green sheet and the conductive paste,
Normally, the pressure is about 9.8 × 10 ^{5 to} 1.96 × 10 ⁷ Pa (1
0 to 200 kgf / cm ² ), the temperature is 70 to 100 ° C., and the time is 2 to 30 minutes. Therefore, the wiring pattern can be formed without damaging the green sheet.

On both sides or one side of the green sheet on which the wiring pattern is formed, a constraining sheet mainly composed of an inorganic composition which does not substantially shrink at the sintering temperature of the green sheet is arranged and laminated. The pressure condition is appropriately determined depending on, for example, the type of the thermosetting resin contained in the green sheet and the restraint sheet, but is usually about 1.96 × 10 ^{6 to} 1.96 × 10 ⁷ Pa (20 to 20
0 kgf / cm ² ), temperature 70-100 ° C, time 1-1
0 minutes.

In the binder removal processing, for example, the kind of the binder, the metal constituting the wiring pattern, etc.
The conditions are determined as appropriate, but usually, using an electric furnace,
The treatment can be carried out at a temperature of 500 to 700 ° C., a temperature rise time of 10 hours and a holding time of 2 to 5 hours. In particular, in the case of copper foil wiring, using a green sheet composed of an organic binder such as a methacrylic acid-based acrylic binder having excellent thermal decomposability, performing debinding and firing under a nitrogen atmosphere which is a non-oxidizing atmosphere. Become.

The conditions of the firing treatment are appropriately determined depending on, for example, the type of the ceramics and the like. Usually, the temperature is 860 to 95 in air or nitrogen using a belt furnace.
0 ° C., time 30-60 minutes.

Now, the second manufacturing method will be further described. When a multilayer wiring board is manufactured by this method, the single-layer wiring boards manufactured as described above are stacked, and the layers are bonded. In addition, after laminating a plurality of single-layer wiring boards, it is also possible to collectively fix and fix them.

For example, when a multilayer wiring board is manufactured by laminating wiring boards manufactured using a sheet-like base material containing a thermosetting resin, first, as described above, the heating and pressurizing treatment is performed. On the sheet-like base material, the transfer material is used to form the wiring layer (second
Is transferred to obtain a single-layer wiring board. When the wiring substrate is obtained, the thermosetting resin is not cured and is kept in an uncured state. A plurality of the single-layer wiring boards are prepared and laminated. Then, the laminate is heated and pressed at the curing temperature of the thermosetting resin,
By curing the thermosetting resin, the wiring boards are bonded and fixed. The temperature of the heating and pressurizing treatment for transferring the wiring layer in the single-layer wiring board is intentionally set to 100.
When the temperature is lower than ℃, the sheet-like substrate can be almost treated like a prepreg even after the transfer. This makes it possible to manufacture a multilayer wiring board by bonding and fixing the single-layer wiring boards in a lump after laminating the single-layer wiring boards, instead of sequentially bonding and fixing the single-layer wiring boards.

In the case of a build-up substrate having a core layer made of a glass epoxy substrate or the like, the transfer material of the present invention is used to transfer a wiring pattern in a state where the sheet-like base material is not cured to form a single-layer wiring substrate. Is formed, these single-layer wiring boards are sequentially laminated in an uncured state, and the laminated body can be collectively cured by a method in which the laminated bodies are collectively cured.

For example, when a multilayer wiring board is manufactured by laminating ceramic wiring boards using a sheet-like base material containing ceramic, a transfer material is pressed onto the sheet-like base material in the same manner as described above. After transferring only the wiring layer (such as the second metal layer), a plurality of the single-layer ceramic wiring boards are stacked, and the heating and pressurizing treatment and the firing of the ceramic are performed to bond the wiring boards together. Fix it.

Although the number of layers in the multilayer wiring board is not particularly limited, it is usually 4 to 10 layers, and may be as many as 20 layers. Further, the overall thickness of the multilayer wiring board is usually 200 to 1000 μm.

Since the wiring board constituting the outermost layer of the multilayer wiring board is excellent in electrical connection, as described above, the transfer material of the present invention (first, second or third transfer material) is used. ) To form a wiring layer (second
Metal layer) is preferably embedded. Further, an intermediate layer other than the outermost layer of the multilayer wiring board,
A wiring substrate having a flat surface may be used, or a wiring substrate having a wiring layer (a second metal layer or the like) formed in a concave portion on the surface may be used.

Next, the configuration of the wiring board of the present invention will be described in detail below.

The transfer material of the present invention (first, second or third transfer material)
As shown in FIG. 8, the first mode of the wiring board manufactured using the transfer material of (1) is a wiring board in which a wiring pattern 801 is formed on the surface of a sheet-like base material 805. At least one concave portion is provided on the surface, and the wiring pattern 801 is formed at the bottom of the concave portion. Further, a plating layer 802 of gold or the like is formed on the wiring pattern 801 by plating.

According to this, for example, when flip-chip mounting a semiconductor on this wiring board, as shown in FIG. 9, the concave portion is used to position the bump 904 formed on the semiconductor 905. it can. In addition, since the connection portion 903 with the semiconductor 905 is formed on a chemically stable gold plating layer or the like, contact resistance is reduced and reliability is improved. Further, since the plating process is performed using the concave portion, the creepage distance can be secured, a short circuit between the plating does not occur, and the reliability of the fine wiring pattern can be maintained.

[0142] In the wiring board, the thickness of the wiring pattern layer is preferably in the range of 3 to 35 µm. If the thickness is less than 3 μm, good conductivity may not be obtained. On the other hand, if it is thicker than 35 μm, it may be difficult to form a fine wiring pattern.

In the wiring board, it is preferable that the depth of the recess is in the range of 1 to 12 μm. If the depth is greater than 12 μm, for example, when mounting a semiconductor, there is a possibility that any of the bumps may not be able to contact the wiring pattern or a time for sealing the sealing resin may be required. If the depth is smaller than 1 μm, the recess may not be used for positioning the bump.

The second mode of the wiring board manufactured using the transfer material of the present invention is, for example, as shown in FIG.
A wiring pattern (1002) is formed on the surface of the sheet-like substrate 1001.
Etc.), wherein at least one surface has at least one concave portion, and the wiring pattern is formed at the bottom of the concave portion. By using the transfer material of the present invention, it is possible for this multilayer wiring board to form a wiring pattern on the wiring board of each layer in an uncured sheet state or a green sheet state. This makes it possible to bond and fix the single-layer wiring boards all together after lamination, or to simultaneously fire the sheet-like base material and the metal foil wiring pattern. As a result, it is possible to obtain a multilayer wiring board having extremely high positional accuracy of the wiring pattern including the interlayer via of each layer.

As shown in FIG. 11, a third embodiment of a wiring board manufactured using the transfer material of the present invention is an electric insulating board 1608 made of ceramic and an electric board containing at least a thermosetting resin composition. It is a multilayer wiring board having a laminated structure with an insulating substrate 1602. Electrically insulating substrate 1602
Is formed so that the wiring pattern does not protrude from the surface by using the transfer material of the present invention. Also,
The wiring pattern is transferred by the transfer material, an electrical insulating sheet containing a thermosetting resin composition in an uncured state, and an electrical insulating substrate made of ceramic are laminated, and collectively with a relatively small press pressure. Can be cured,
A multilayer wiring board can be realized without damaging the ceramic layer.

On the other hand, the multilayer wiring board is manufactured by forming a wiring pattern on a ceramic substrate in advance by printing and firing, and then bonding the wiring pattern to an electrically insulating sheet containing a thermosetting resin composition. You can also. However,
Since the wiring pattern formed by printing becomes a projection,
In the step of bonding to the electrically insulating sheet containing the thermosetting resin composition, stress concentration occurs, and often becomes a starting point of cracks in the ceramic substrate layer.

As shown in FIG. 12, the fourth embodiment of the wiring board manufactured by using the transfer material of the present invention is the same as the wiring board according to the third embodiment, except that an electric insulating substrate 1608 made of ceramic is used. And a multilayer wiring board having a laminated structure with an electrically insulating substrate 1602 containing at least a thermosetting resin composition. Further, in each layer of the laminated electrically insulating substrate, an interlayer via hole 1603 filled with a conductive via composition is disposed at a predetermined position, and a wiring pattern 1610 electrically connected to the interlayer via hole 1603 is formed. . According to this structure, it is possible to obtain the same multilayer wiring connection as the wiring rule of the multilayer wiring board composed only of the ceramic substrate or the multilayer wiring substrate composed only of the resin substrate, though it is a laminate of the ceramic substrate and the resin substrate. it can.

In this case, as the conductive composition used for the interlayer connection via of the ceramic substrate, a sintered product composed of metal powder and glass powder is used, and as the conductive composition used for the interlayer connection via of the resin substrate, A resin composition composed of a mixture of a metal powder and a thermosetting resin is used.

At the interface between the electrically insulating substrate containing the thermosetting resin composition and the ceramic substrate, the wiring layer formed on the ceramic substrate does not protrude from the surface and is built in the ceramic substrate. It is characterized by being.

In the firing step of the ceramic layer, an inorganic composition which does not substantially shrink at the sintering temperature of the green sheet is mainly used on both or one side of the green sheet to which the wiring pattern has been transferred. After arranging the constraining sheet, it is preferable to perform a baking treatment. Thus, sintering without shrinkage in the plane direction can be realized, so that even when laminating with a resin-based substrate, common interlayer via position data can be adopted.

Of course, after forming a wiring pattern on a ceramic green sheet filled with via paste in advance by printing and firing, this is joined to an electrical insulating sheet containing a thermosetting resin composition. The interlayer connection of the laminate may be realized. However, since the wiring pattern formed by printing becomes a projection, stress concentration occurs in the step of joining the electrically insulating sheet containing the thermosetting resin composition and the ceramic green sheet, and the ceramic substrate layer Cracks often start.

As shown in FIG. 13, by using the transfer material of the present invention, a ceramic having a high sintering temperature such as an alumina substrate having relatively high mechanical strength or an aluminum nitride substrate having high thermal conductivity can be obtained. With the stacked structure of the substrate 1708 and the electrically insulating substrate 1702 containing at least the thermosetting resin composition, a multilayer wiring substrate in which low-resistance wiring is formed can be manufactured. Here, the feature is that the interlayer via used for the ceramic substrate and the interlayer via used for the resin-based substrate are formed of the same thermosetting conductive resin composition.

Of course, the ceramic substrate used here is a low-temperature fired ceramic which can be fired simultaneously with copper or silver, for example, an alumina-based glass ceramic, Bi-Ca-
Nb-O-based ceramics or the like may be used.

As shown in FIG. 14, the fifth embodiment of the wiring board manufactured by using the transfer material of the present invention is the same as the wiring board according to the third or fourth embodiment, except that a thermosetting resin is used. An electrically insulating substrate 1 containing a thermosetting resin composition, which is a kind of a heterogeneous laminated wiring substrate having a laminated structure of an electrically insulating substrate containing a composition and an electrically insulating substrate made of ceramic.
Electric insulating substrates 1801 and 1802 made of different kinds of ceramics having different compositions are laminated via 807.

According to this structure, different types of magnetic ceramics and dielectric ceramics have been conventionally used, which have been technically difficult due to factors such as different sintering temperatures and firing shrinkage patterns and mutual diffusion during sintering. Lamination and different types of lamination of a high dielectric constant dielectric ceramic and a low dielectric constant dielectric ceramic can be easily configured. Incidentally, in the manufacturing process of the heterogeneous laminated wiring board of the present invention, using the transfer material of the present invention,
For example, a wiring pattern of a copper foil or the like is transferred to a green sheet or an uncured thermosetting resin-containing sheet, thereby producing a wiring substrate of each layer. As a result, a laminate having wirings with low resistance in all layers can be obtained without causing damage during lamination.

In the wiring board according to the fifth embodiment, the ceramic substrates having different sintering temperatures are laminated by interposing the electrically insulating substrate containing the thermosetting resin composition between the ceramic substrates. Is possible. Thereby, for example, a heterogeneous laminated wiring board in which the dielectric constant of each layer is different from each other, or a heterogeneous laminated wiring board in which a magnetic layer and a dielectric layer are laminated can be easily realized.

Of course, after forming a wiring pattern on a ceramic green sheet filled with via paste in advance by printing and baking, it is joined to an electrically insulating sheet containing a thermosetting resin composition to form a laminate. Interlayer connection may be performed. However, since the wiring pattern formed by printing becomes a projection, in the step of bonding to the electrically insulating sheet containing the thermosetting resin composition, stress concentration occurs and becomes a starting point of cracks in the ceramic substrate layer. Often.

As shown in FIG. 15, the sixth embodiment of the wiring board manufactured by using the transfer material of the present invention is, like the wiring board according to the fourth or fifth embodiment, made of an electric material made of ceramic. Insulating substrates 1801 and 1802, and electrically insulating substrate 1807 including at least a thermosetting resin composition
And a laminated structure. An electric insulating substrate 1807 containing the thermosetting resin composition is disposed at least on the uppermost layer or the lowermost layer, and electric insulating substrates 1801 and 1802 made of ceramic are disposed on the inner layer. According to this structure, the layer covering the outermost surface of the substrate is
Since it is formed of a thermosetting resin composition having a property of being resistant to cracking, it has excellent drop resistance and the like.

In the production process of these different kinds of laminated wiring boards, the transfer material of the present invention is used to convert a wiring pattern such as a copper foil into a green sheet or an uncured thermosetting resin-containing sheet. By transferring, a wiring board of each layer is manufactured. As a result, a multilayer wiring board having wiring with low resistance in all layers can be obtained without causing damage during lamination.

Of course, a wiring pattern is formed by printing and firing on a ceramic green sheet filled with a via paste in some cases, and then joined to an electrically insulating sheet containing a thermosetting resin composition to form a laminate. Connection between layers may be performed. However, since the wiring pattern formed by printing becomes a projection at the time of lamination, it may be a starting point of cracks in the ceramic substrate layer in the step of joining with the electrically insulating sheet containing the thermosetting resin composition. Many.

Note that an inductor, a capacitor, and a capacitor are electrically connected to the wiring pattern of the transfer material of the present embodiment.
It is also possible to form a circuit component such as a resistor or a semiconductor element and transfer it to a substrate together with a wiring pattern. In addition,
Passive components such as inductors, capacitors, and resistors
It is preferable to form on the transfer material by a printing method such as screen printing.

Next, more specific examples of the first to fourth embodiments will be described below.

Example 1 A first transfer material of the present invention was manufactured as shown in FIGS.

As shown in FIG. 4A, the first metal layer 4
As 01, an electrolytic copper foil having a thickness of 35 μm was prepared. First, a copper salt raw material is dissolved in an alkaline bath, and this is electrodeposited on a rotating drum so as to have a high current density.
Was produced, and this copper layer was continuously wound up to produce an electrolytic copper foil.

Next, as shown in FIG. 4B, on the surface of the first metal layer 401, Ni
A -P alloy layer was formed to a thickness of about 100 nm by plating. A second metal layer 40 for forming a wiring pattern is formed thereon.
As 3, the same electrolytic copper foil as the first metal layer 401 is used.
The laminate was formed by electrolytic plating so as to have a thickness of 9 μm, thereby producing a laminate having a three-layer structure.

The center line average roughness (Ra) of this surface is 4
The surface was roughened to a thickness of about μm. The roughening treatment was performed by depositing fine copper particles on the electrolytic copper foil.

Next, as shown in FIGS. 4 (c) to 4 (e), a dry film resist (DFR) 404 is attached by photolithography, and the wiring pattern portion is exposed and developed. The second metal layer 40
3. The surface layer portions of the release layer 402 and the first metal layer 401 were etched by a chemical etching method (immersion in a ferric chloride aqueous solution) to form an arbitrary wiring pattern.

Thereafter, as shown in FIG. 4F, the first transfer material was obtained by removing the mask portion (DFR404) with a release agent. Since the first metal layer and the second metal layer are made of the same copper, a single chemical etching etches not only the second metal layer but also the surface layer of the first metal layer into a wiring pattern. be able to. In the first transfer material, the surface layer of the first metal layer as the carrier layer is also
There is a structural feature in that it is processed into a wiring pattern.

In the manufactured first transfer material, the release layer 402 for bonding the first metal layer 401 and the second metal layer 403 has excellent chemical resistance even though the adhesive force itself is weak. As a result, the first metal layer 401, the release layer 402,
Even when the entire stacked body of the second metal layer 403 was subjected to the etching treatment, the wiring pattern could be formed without any problem without delamination between the layers. On the other hand, the adhesive strength between the first metal layer 401 and the second metal layer 403 is 40 N / m (gf /
cm) and excellent in peelability. As a result of transferring the second metal layer 403 to the substrate using such a first transfer material, the bonding surface between the second metal layer 403 and the release layer 402 was easily peeled off, and the second metal layer 403 was peeled off. Was transferred to the substrate.

In the first transfer material according to this embodiment, since the carrier (first metal layer) is formed of a copper foil of 35 μm, even if the transfer material is deformed at the time of transfer, the carrier layer is not deformed. It was able to withstand the deformation stress.

In the first transfer material, the surface layer of the first metal layer as a carrier layer has a wiring pattern portion as a convex portion and a portion other than the wiring pattern as a concave portion. When pressed onto a substrate (substrate material), the substrate extruded from the portion where the wiring pattern is embedded is likely to flow into the concave portion, and it is easy to suppress lateral deformation stress that tends to distort the pattern. Therefore, the pattern distortion in this example was only the amount (0.08%) caused by the shrinkage of the base material upon curing.

As a comparison, a transfer material in which the surface layer of the first metal layer 401 was not etched at all and only the second metal layer was formed with a wiring pattern (ie, a transfer material having a flat carrier layer surface) was used. When the wiring layer was transferred to the sheet-like substrate, the distortion of the pattern was 0.16% at the maximum. In this comparative example, since the carrier is a thick copper foil, the distortion is basically small as in the present embodiment. However, in a portion where the wiring is concentrated, a region into which the base material flows cannot be secured. It was confirmed that the wiring pattern was slightly distorted. Although the amount of pattern distortion is practically a sufficiently small value, for example, when the transfer material according to the comparative example is used, the formed wiring pattern becomes flat or convex with the substrate surface. Therefore, the effect of the transfer material of the present embodiment, which does not form a concave portion unlike the first transfer material according to the first embodiment, and facilitates alignment during flip chip mounting, cannot be obtained. From this, the first carrier layer
The effect of the transfer material of the present invention in which a protrusion corresponding to the wiring pattern was formed on the surface of the carrier layer by etching up to the metal layer of No. 3 was recognized.

In this embodiment, a plating layer such as a Ni plating layer, a nickel-phosphorus alloy layer, or an aluminum plating layer having a thickness of 200 nm or less is used as the peeling layer. May be used. As the organic layer, for example, a long-chain aliphatic carboxylic acid which is solid at room temperature and which can form a chemical bond with Cu may be used.
Even when these are used, a transfer material similar to the transfer material of the present embodiment described above can be realized.

Example 2 An example of the second transfer material according to the present invention was manufactured by a method different from that of Example 1 as shown in FIGS. 5A to 5E. The second transfer material differs from the first transfer material according to the first embodiment in the structure of the wiring layer.

First, as the first metal layer 501, the thickness 3
A 5 μm electrolytic copper foil was prepared. A copper salt raw material is dissolved in an alkaline bath, which is electrodeposited on a rotating drum so as to have a high current density, thereby producing a metal layer (copper layer). Was prepared.

Next, a release layer 502 composed of a thin nickel plating layer having a thickness of 100 nm or less was formed on the surface of the first metal layer 501 made of the electrolytic copper foil. As a second metal layer 503 for forming a wiring pattern thereon,
The same electrolytic copper foil as that of the first metal layer 501 was applied to a thickness of 3 μm
The first metal layer 501, the release layer 502, and the second metal layer 503 are stacked by electrolytic plating.
Of the three-layer structure was produced.

The surface of the second metal layer 503 in this laminate was subjected to a surface roughening treatment so that its center line average roughness (Ra) was about 3 μm. The roughening treatment was performed by depositing fine copper particles on the electrolytic copper foil. An adhesive (not shown) was applied thereon, and a dry film resist (DFR) 504 used for photolithography was attached. Note that this DFR
Reference numeral 504 has plating resistance and functions as a plating resist. Through the above steps, the laminate shown in FIG. 5A was manufactured.

Next, as shown in FIG. 5B, after exposing the DFR 504 to the wiring pattern shape, development is performed,
A recess reaching the second metal layer 503 was formed in the wiring pattern region of the DFR 504. The depth of the recess is 25μ
m. Thereafter, as shown in FIG. 5C, a third metal layer 505 made of a copper plating layer having a thickness of 20 μm was formed in the recess by electrolytic copper plating. Next, FIG.
As shown in (d), it is immersed in a stripping solution,
4 was removed.

Finally, as shown in FIG. 5E, patterning was performed by a chemical etching method in which the substrate was immersed in an aqueous ferric chloride solution. This etching is performed in order to remove the second metal layer 503 having a small thickness of 3 μm and the thin peeling layer 502 (plating layer). As a result, since the etching is performed in a short time, the third metal layer 505 is also slightly etched to have a thickness of about 15 μm, and the surface layer portion of the first metal layer 501 is partially eroded. As shown in ()), a second transfer material was obtained.

Since the first, second, and third metal layers are made of the same copper, the second etching can be performed by one chemical etching.
In addition, not only the third metal layer but also the first metal layer was partially removed, so that a portion other than the wiring pattern on the surface layer of the first metal layer could be formed in the concave portion. Further, as in the case of the first embodiment, since the surface of the first metal layer which is the carrier layer is etched, and the third metal layer is formed by the additive method, the film thickness can be reduced. Can be arbitrarily controlled. Further, in this embodiment, the release layer is not limited to the plating layer, but may be an extremely thin adhesive layer or an adhesive layer formed of an organic layer.

In the second transfer material manufactured as described above,
The release layer 502 for connecting the first metal layer 501 and the metal layers 503 and 505 for forming a wiring pattern is excellent in chemical resistance even though the adhesive force itself is weak, and has a four-layer structure shown in FIG. Even when the entire laminate was etched, the wiring pattern could be formed without any problem without delamination between layers.

On the other hand, the adhesive strength between the first metal layer 501 and the second metal layer 503 via the release layer 502 is 30
N / m, and was excellent in peelability. Thereby, the second metal layer 5 as a wiring layer is formed by using the second transfer material.
03 and the third metal layer 505 are transferred to a sheet-like base material (substrate material), and then the second metal layer 503 and the release layer 502 are transferred.
Can be easily separated, and only the wiring layer can be left on the substrate. At this time, at the time of peeling, the peeling layer 502 composed of a plating layer remained attached to the first metal layer 501 side as a carrier.

The second transfer material according to the present example manufactured as shown in FIG. 5E is pressure-bonded to a sheet-like substrate (substrate material) containing an uncured thermosetting resin. At the same time, the wiring layer (second metal layer 50) is thermally cured, and then the first metal layer is removed by chemical etching.
The third and third metal layers 505) can also be transferred to a substrate. By controlling the etching time, the surface of the substrate including the wiring layer can be made flat, or the wiring layer can be made concave with respect to the substrate surface.

In this embodiment, as in the first embodiment, since the carrier layer is made of a 35 μm copper foil, the carrier layer can withstand the deformation stress even if the base material is deformed during transfer. did it. On the other hand, in the second transfer material according to the present embodiment, the concave portion of the first metal layer as the carrier layer is as deep as about 5 μm. Thereby, when the transfer material is pressed against the sheet-like base material, the base material in the portion where the wiring layer is embedded is more likely to flow into the concave portion, and the lateral deformation stress that tends to distort the pattern is further suppressed. can do.

Accordingly, when the transfer material of this example was used, the pattern distortion was only 0.08% of the curing shrinkage of the substrate. From this, the effect of etching the surface layer portion of the first metal layer which is the carrier layer to form the surface layer portion in a convex shape in the wiring pattern portion and a concave portion in the portion other than the wiring pattern is recognized. Was. Further, when the wiring resistance after the transfer was measured, the wiring cross-sectional area was increased by the third metal layer and the resistance value was reduced by 20 to 30% compared to Example 1. It was able to be reduced.

In this embodiment, as shown in FIG. 5E, transfer is performed after patterning of the first metal layer is performed by the chemical etching method, but transfer formation is performed without performing the chemical etching. The transfer may be performed while curing the base material using the material. However, in this case, after the transfer,
By peeling off the release layer and the first metal layer and removing the second metal layer by soft etching or the like, a wiring pattern consisting of only the third metal layer is formed.

Also in this embodiment, the carrier copper foil (first metal foil) having the convex wiring pattern can be reused after the transfer. Furthermore, since the wiring pattern transferred to the substrate using the transfer material of the present embodiment forms a concave portion on the substrate surface, positioning can be performed using the concave portion, which facilitates flip chip mounting of bare chips. There is also the advantage of becoming.

(Embodiment 3) The transfer material according to this embodiment is
9 is another example of the second transfer material of the present invention. The transfer material according to the present embodiment differs from the transfer material according to the second embodiment in the structure of the wiring layer, but has the same drawing.
This will be described with reference to (a) to (e).

First, a first metal layer 501 having a thickness of 3
A 5 μm electrolytic copper foil was prepared. A copper salt raw material is dissolved in an alkaline bath, which is electrodeposited on a rotating drum so as to have a high current density, thereby producing a metal layer (copper layer). Was prepared.

Next, on the surface of the first metal layer 501, a release layer 502 composed of a thin nickel plating layer having a thickness of 100 nm or less was formed. An electrolytic copper foil, the same as the first metal layer 501, was laminated thereon by electrolytic plating as a second metal layer 503 for forming a wiring pattern so as to have a thickness of 3 μm. This allows
A laminate having a three-layer structure of a first metal layer 501, a release layer 502, and a second metal layer 503 was manufactured.

The center line average roughness (Ra) of this surface is 3
The surface was roughened to a thickness of about μm. The roughening treatment was performed by depositing fine copper particles on the electrolytic copper foil. The same adhesive as in Example 2 was applied thereon, and a dry film resist (DFR) 504 used for photolithography was attached. This DF
R504 has plating resistance and functions as a plating resist. As a result, as shown in FIG. 5A, a laminate having a four-layer structure was produced.

Next, as shown in FIG. 5B, after exposing the DFR 504 in the wiring pattern portion, development is performed,
In the area corresponding to the wiring pattern in the DFR 504,
A recess reaching the second metal layer 503 was formed. The depth of this recess is 25 μm. Thereafter, as shown in FIG. 5C, a third metal layer 505 made of a gold plating layer having a thickness of 2 μm was formed by an electrolytic gold plating method. Next, FIG.
As shown in Fig. 7, DFR 504 was removed by immersion in a stripping solution.

Finally, as shown in FIG. 5E, patterning was performed by a chemical etching method of immersion in an aqueous ferric chloride solution. The difference from the second embodiment is that in the present etching step, the gold plating layer 505 functions as an etching resist, so that the thin second metal layer 503 having a thickness of 3 μm and the peeling layer 502 which is a thin plating layer are selectively removed. can do. As a result, it is possible to obtain a transfer material in which the outermost surface layer is plated with gold, and there is no possibility that the surface of the wiring layer is oxidized. Accordingly, when a bare chip or a component is mounted on the wiring pattern after the wiring pattern is formed on the substrate using the present transfer material, a low-resistance connection can be obtained.

For comparison, as shown in FIG. 1, a gold-plated transfer material was prepared by applying gold plating to the entire surface of a transfer material having a wiring pattern composed of a single copper foil wiring, and the transfer material to the substrate was prepared. When the transfer was tried, the transferability of the wiring pattern was impaired. This confirmed the effectiveness of the transfer material according to the present example in which the gold plating layer was formed only on the surface layer of the wiring pattern.

Example 4 A third transfer material of the present invention was manufactured as shown in FIGS. This third
Is different from the second transfer material of the present invention according to the second or third embodiment in the structure of the wiring layer.

First, as shown in FIG. 6A, a laminate having a four-layer structure of a first metal layer 601, a release layer 602, a second metal layer 603, and a dry film resist (DFR) 604 is prepared. I do. The structure and manufacturing method of this laminate are the same as those of the laminate shown in FIG.

Next, as shown in FIG.
Area 6 other than the area corresponding to the wiring pattern in 04
07 was exposed and then developed to form a concave portion 608 having a thickness of 25 μm of the DFR 604 in the wiring pattern region. Thereafter, as shown in FIG. 6 (c), after depositing about 2 μm by electroless copper plating, 15 μm by electrolytic copper plating.
A copper plating layer (third metal layer) 605 having a thickness of μm was formed. In the present embodiment, a silver plating layer (fourth metal layer 606) is further deposited by electrolytic silver plating to a thickness of about 3 μm.

Next, as in Example 2, as shown in FIG. 6D, the DFR was removed by immersion in a stripping solution. Finally, as shown in FIG. 6E, patterning was performed by a chemical etching method in which the substrate was immersed in an aqueous ferric chloride solution.
This etching is basically performed to remove the thin second metal layer 603 having a thickness of 3 μm. However, since the fourth metal layer 606 which is a silver plating layer functions as an etching mask, the third metal layer 603 is formed. 605 and the fourth metal layer 606
Except for a slight side etching portion, etching is basically not performed, so that the thickness is maintained. This etching is performed until the release layer 602 and the surface portion of the first metal layer 601 are eroded.

Also in this embodiment, the second metal layer 603
Etching for patterning is short enough. In this way, a third transfer material was obtained in which a region other than the wiring pattern in the surface layer portion of the first metal layer 601 was formed in a concave shape. Note that the depth of the concave portion of the first metal layer 601 can be arbitrarily controlled by adjusting the etching time.

Since the first, second, and third metal layers are made of the same copper, the first metal layer is simultaneously formed with the wiring layer (second, third metal layer) by one chemical etching. Part of the layer was also eroded, and a region other than the wiring pattern in the surface layer of the first metal layer could be formed in a concave shape. The third transfer material according to the present embodiment is etched up to the first metal layer as the carrier layer, as in the first embodiment. In addition, a fourth metal layer (silver plating layer) different from the second and third metal layers (copper plating layer), which are wiring layers, is formed by an additive method.

In the third transfer material manufactured as described above,
A peeling layer 602 for bonding a first metal layer 601 as a carrier layer and a second metal layer 603, a third metal layer 605, and a fourth metal layer 606 as wiring layers has an adhesive force itself. Excellent in chemical resistance even if weak. This allows
Even when the entire laminate of the five-layer structure shown in FIG. 6D is etched, only the second metal layer 603 can be effectively removed, and the transfer material can be removed without peeling between the layers of the laminate. Could be formed. The first metal layer 601
The adhesive strength between the first metal layer 603 and the second metal layer 603 via the peeling layer 602 was 40 N / m (gf / cm), indicating excellent peelability.

By using such a third transfer material, the second metal layer 603, the third metal layer 605, and the fourth metal layer 6
06 was transferred to a sheet-like substrate (substrate material). As a result, the bonding surface between the first metal layer 601 and the second metal layer 603 (the release layer 60
2) was easily peeled off, and the wiring pattern having the three-layer structure could be transferred to the base material.

In this embodiment, as in the first embodiment, since the carrier layer is made of 35 μm copper foil, the carrier layer can withstand the deformation stress even if the base material is deformed during transfer. did it. On the other hand, in the transfer material of this embodiment, the concave portion of the first metal layer as the carrier layer is as deep as about 10 μm. Thereby, when the transfer material is pressed against the sheet-like base material, the base material in the portion where the wiring pattern is embedded is more likely to flow into the concave portion, and the lateral deformation stress that tends to distort the pattern is further suppressed. be able to.

Accordingly, the pattern distortion in the present embodiment is the same as that in the second embodiment, but is 0.0% of the curing shrinkage of the substrate.
It was only 7%. From this, the first carrier layer
Up to the metal layer, the effect of forming an uneven shape according to the wiring pattern was recognized. Further, when the wiring resistance after the transfer was measured, the thickness of the wiring layer was increased by providing the third and fourth metal layers as compared with Example 1, so that the wiring cross-sectional area could be increased. The resistance value could be reduced by about 20 to 30%.

Further, in this embodiment, since the outermost layer in contact with the base material in the wiring layer is the silver plating layer, the connection with the conductive via paste provided on the substrate was made as shown in Embodiment 5 later. The properties could be more stabilized.

Also, when a wiring pattern is formed on a substrate using the transfer material of this embodiment, the concave wiring pattern contributes to the alignment of flip-chip mounting as in the above-described embodiments. . Further, needless to say, the carrier copper foil (first metal layer) on which the convex portions corresponding to the wiring patterns are formed can be reused after the transfer.

(Embodiment 5) The third embodiment manufactured in the above Embodiment 4
As shown in FIGS. 7A to 7C, using the transfer material of
A composite wiring board was manufactured. In addition, FIG.
In (c), the metal layer 701 corresponds to the fourth metal layer 606 of the third transfer material according to the fourth embodiment,
Reference numeral 2 denotes a third metal layer on the third metal layer 605 of the third transfer material.
Reference numeral 3 denotes a release layer 70 on the second metal layer 603 of the third transfer material.
4 corresponds to the release layer 602 of the third transfer material, and the metal layer 705 corresponds to the first metal layer 601 of the third transfer material.

First, a substrate for transferring a wiring pattern was prepared. This substrate was produced by preparing a sheet-like base material 706 made of a composite material shown below, providing a via hole in this, and filling the via hole with a conductive paste 707. Hereinafter, the sheet-like base material 706
The following shows the composition of the components. (Ingredient composition of the sheet-like substrate 706) 90% by weight of Al ₂ O ₃ (manufactured by Showa Denko KK, AS-40: particle size 12 μm) ・ 9.5% by weight of liquid epoxy resin (manufactured by Nippon Reck, EF-450) % Carbon black (manufactured by Toyo Carbon Co., Ltd.) 0.2% by weight Coupling agent (manufactured by Ajinomoto Co., titanate type: 46B) 0.3% by weight , A methyl ethyl ketone solvent was added as a viscosity adjusting solvent until the slurry viscosity of the mixture became about 20 Pa · s. Then, a cobblestone of alumina was added thereto, and the mixture was rotated and mixed in a pot for 48 hours at a speed of 500 rpm to prepare a slurry.

Next, a release film having a thickness of 75 μm was prepared.
m PET film was prepared, and a film was formed on the PET film to a gap of about 0.7 mm using the slurry by the doctor blade method. Then, this film forming sheet is heated at a temperature of 100 ° C.
By leaving it for a while, the methyl ethyl ketone solvent in the sheet was volatilized, the PET film was removed, and a sheet substrate 706 having a thickness of 350 μm was prepared.
Since the solvent was removed at a temperature of 100 ° C., the epoxy resin remained in an uncured state, and the sheet-like substrate 706 had flexibility.

The sheet-like base material 706 is cut into a predetermined size by utilizing its flexibility, and a carbon dioxide laser is used to cut the sheet-like base material 706 at a position where the pitch is evenly spaced from 0.2 mm to 2 mm. A 0.15 mm through hole (via hole) was provided. Then, the through holes were filled with a conductive paste 707 for filling via holes by a screen printing method, thereby producing the substrate. The conductive paste 707 was prepared by preparing the following materials to have the following composition and kneading them with a three-roll mill. (Ingredient composition of conductive paste 707) Spherical copper particles (Mitsui Metal Mining Co., Ltd .: particle size 2 μm) 85% by weight Bisphenol A type epoxy resin (Yuika Shell Epoxy Co., Epicoat 828) 3% by weight -Glucidyl ester epoxy resin (YD-171, manufactured by Toto Kasei Co., Ltd.) 9% by weight-Amine adduct curing agent (MY-24, manufactured by Ajinomoto Co., Inc.) 3% by weight Next, as shown in FIG. The sheet-like substrate 7
06, the fourth transfer material layer 701 side of the third transfer material described in the fourth embodiment was placed so as to be in contact with the third transfer material, and the pressing temperature was 120 ° C. and the pressure was about 9.8 × 10 ⁵ using a hot press. P
a (10 kgf / cm ² ) for 5 minutes. By this heating and pressurizing treatment, the sheet-like substrate 706 is formed.
7B, the epoxy resin in the conductive paste 707 melts and softens, and as shown in FIG. 7B, the wiring layer including the second, third, and fourth metal layers 703, 702, and 701 is formed into a sheet-like shape. It was buried in the substrate 706.

Then, the epoxy resin was cured by further increasing the heating temperature and treating at 175 ° C. for 60 minutes. Thereby, the sheet-like base material 70
6 and second, third, and fourth metal layers 703, 702, 7
01 and the conductive paste 7
07 and the fourth metal layer 701 were electrically connected (inner via connection) and firmly adhered.

From the laminate shown in FIG. 7B,
First metal layer 705 as carrier layer and release layer 70
4 are peeled off together to form second, third, and fourth metal layers 703, 702 on both surfaces as shown in FIG.
A wiring board to which 701 was transferred was obtained. This wiring board is referred to as a wiring board 7A. A recess corresponding to the depth of the recess formed by etching in the surface layer of the first metal layer 705 is formed in the wiring board 7A, and the second, third, and fourth metal layers are formed at the bottom of the recess. 703, 702, 70
1 was formed.

Further, in addition to the wiring board 7A manufactured in the present embodiment, a wiring board (referred to as a wiring board 7B) is formed by transferring a wiring pattern using the first transfer material described in the first embodiment. Produced. The reliability of these wiring boards 7A and 7B was evaluated by a solder reflow test and a temperature cycle test. Each test method is shown below. (Solder reflow test) The maximum temperature was set to 260 ° C. using a belt type reflow apparatus (manufactured by Matsushita Electric Industrial Co., Ltd.), and the treatment at the above temperature for 10 seconds was performed 10 times. (Temperature cycle test) 125 ℃ on high temperature side, -6 on low temperature side
Set the temperature to 0 ° C and hold for 30 minutes at each temperature for 200 minutes.
Cycled.

As a result, both the wiring boards 7A and 7B
Even after performing each of the above-mentioned tests, no crack was generated even in shape, and no particular abnormality was recognized in the ultrasonic flaw detector. Also, the initial resistance of the inner via connection resistance by the conductive resin paste 707 was almost the same.

However, although there was almost no change from the initial performance before each test, the change rate was 5% or less for the wiring board 7A, and 10% for the wiring board 7B. It was below. Although sufficient stability is obtained in the via connection of any of the wiring boards, more stable via connection is realized in the wiring board 7A in which the Ag plating layer exists at the connection portion between the wiring layer and the conductive resin paste. I was able to.

Example 6 A ceramic wiring board as shown in FIG. 8 was produced using the transfer material produced in Example 1 above.

First, a substrate for transferring a wiring pattern was prepared. The substrate is a low-temperature fired ceramic green sheet 805 including a low-temperature fired ceramic material and an organic binder.
Was prepared by providing a via hole in this, and filling the via hole with a conductive paste 806.
The component composition of the green sheet 805 is shown below. Mixture of ceramic powder Al ₂ O ₃ and lead borosilicate glass (composition of the green sheet 805) (manufactured by Nippon Electric Glass Co., Ltd.: MLS-1000) 88 wt% methacrylic acid based acrylic binder (Kyoeisha Chemical Co.: cage Cox 7025) 10% by weight ・ BBP (manufactured by Kanto Chemical Co., Ltd.) 2% by weight Each of the above components was weighed so as to have the above composition, and a toluene solvent was added to the mixture as a viscosity adjusting solvent, and the slurry viscosity of the mixture was reduced. It was added until the pressure became about 20 Pa · s. Then, a cobblestone of alumina was added thereto, and the mixture was rotated and mixed in a pot for 48 hours at a speed of 500 rpm to prepare a slurry.

Next, a 75 μm thick release film was used.
m of polyphenylene sulfide (PPS) film was prepared, and a gap of about 0. 0 was formed on the PPS film by a doctor blade method using the slurry.
A film was formed to a thickness of 4 mm to form a film-formed sheet. The toluene solvent in the sheet was volatilized, and the PPS film was removed to produce a 220 μm-thick green sheet 805. The green sheet 805 is formed by adding a plasticizer BB to the methacrylic acid-based acrylic binder as an organic binder.
Since P was added, it had flexibility and good thermal decomposability.

The green sheet 805 is cut into a predetermined size by utilizing its flexibility, and a punching machine is used to cut the green sheet 805 at a position having a pitch of 0.2 mm to 2 mm and a regular interval of 0.2 mm to 2 mm. 15mm through hole (via hole)
Was provided. Then, a conductive paste 806 for filling a via hole was filled into the through-hole by a screen printing method, thereby producing the substrate. The conductive paste 806
The following materials were prepared to have the following composition and kneaded with three rolls. (Conductive paste 806) ・ Spherical silver particles (Mitsui Metal Mining Co., Ltd .: particle size 3 μm) 75% by weight ・ Acrylic resin (Kyoeisha Chemical: polymerization degree 100 cps) 5% by weight ・ Borosilicate glass (Nippon Electric Glass) 3% by weight ・ Terpineol (manufactured by Kanto Kagaku) 12% by weight ・ BBP (manufactured by Kanto Kagaku) 5% by weight Next, on both surfaces of the substrate, the first transfer material of the first transfer material manufactured in Example 1 was used. second metal layer disposed so (wiring layer) side is in contact, using a hot press, pressing temperature 70 ° C., a pressure of about ^{5.88 × 10 6 Pa (60kgf /} cm 2) for 5 minutes,
Heat and pressure treatment was performed. By this heating and pressurizing treatment, the acrylic resin in the substrate is melted and softened, and one of the second metal layer (wiring layer), the release layer, and the first metal layer (carrier) of the first transfer material is formed. The portion (projection) was buried in the substrate.

After cooling such a laminate, the first metal layer and the release layer, which are the carrier, are peeled off from the laminate, leaving only the second metal layer, as shown in FIG. Thus, the wiring substrate 800 having the wiring layer 801 made of the second metal layer on both surfaces of the substrate was formed.

An alumina green sheet that was not sintered at the firing temperature was laminated on both sides of the wiring board, and the binder was fixed and removed by firing in a nitrogen atmosphere. First, in order to remove the organic binder in the green sheet 805, the mixture was heated in an electric furnace to 700 ° C. in nitrogen at a heating rate of 25 ° C./hour.
Treated at 00 ° C. for 2 hours. Then, using a belt furnace, the wiring board after the binder removal treatment is 900
Firing was performed by treating at 20 ° C. for 20 minutes. The conditions are as follows: temperature rise 20 minutes, temperature fall 20 minutes, total in / out 6
0 minutes. After firing, the alumina green sheet could be easily removed. As a result, a low-temperature fired ceramic wiring board 800 was manufactured.

On both sides of this wiring board 800, the first
A concave portion having a depth corresponding to the thickness of the unevenness of the first metal layer of the transfer material was formed, and the wiring layer 801 made of the second metal layer was formed at the bottom of the concave portion. The wiring layers 801 on both sides of the wiring board 800 are made of a conductive paste 806.
Were electrically connected in the thickness direction by conductive metal sintered vias obtained by sintering the conductive metal. In this example, as shown in FIG. 8, a gold plating layer 802 was formed on the second metal layer 801 of the wiring board 805.

Next, the low-temperature fired ceramic wiring substrate 8
A configuration in which a bare-chip semiconductor 905 is flip-chip mounted on the surface of No. 00 will be described. FIG. 9 is a cross-sectional view showing an example of a schematic configuration in which a bare chip semiconductor 905 is mounted on the ceramic wiring board 800.

First, a bump 903 made of gold wire is formed on the aluminum pad 904 on the surface of the bare chip semiconductor 905 by using a wire bonding method.
A thermosetting conductive adhesive (not shown) was transferred onto 3. Then, the protruding bump 903 is aligned with a concave portion (wiring pattern portion) on the surface of the ceramic wiring board 800, and the protruding bump 903 is bonded to the gold plating layer 802 via the conductive adhesive, thereby forming the semiconductor 905.
Was implemented. As a result, the bumps 903 are formed in the recesses formed by transferring the second metal layer (wiring layer 801) using the first transfer material as described above.
And a wiring layer (the second metal layer 801 and the gold plating layer 80).
2) was connected.

The reliability of this flip chip mounting board was evaluated by a solder reflow test and a temperature cycle test. Each test was performed under the same conditions as in Example 4. As a result, the ceramic wiring board 800 on which the semiconductor 905 was flip-chip mounted was stable with almost no change in the bump connection resistance even after performing each of the above-described processes.

In the present embodiment, the second transfer material shown in FIG. 2 was composed of an Ag plating layer for the second metal layer and a pattern plating layer of Ag for the third metal layer. When transfer was performed using a transfer material, an Ag-plated wiring pattern could be formed on the ceramic green sheet 805. In this case, in the manufacturing process, debinding in the air and sintering in the air are possible, which is advantageous in cost. Further, the oxidation resistance of the wiring is significantly improved.

Example 7 A multilayer wiring board was manufactured using a transfer material and a substrate made of a composite material manufactured in the same manner as in Example 5. FIG. 10 is a cross-sectional view illustrating an example of a schematic process of manufacturing a multilayer wiring board.

In FIGS. 10A to 10J, 1001
a, 1001b, 1001c are substrate sheets, 1002
a, 1002b, 1002c are first metal layers as carriers, 1003a, 1003b, 1003c are conductive pastes, 1004a, 1004b, 1004c are second metal layers as wiring patterns, 1005a, 1005b,
1005c indicates a release layer, A, B, C, and D indicate transfer materials, and E indicates a multilayer wiring board.

Also, in FIGS. 10A to 10I, FIG.
(A), (d), and (g) show steps of manufacturing a single-layer wiring substrate using the transfer material A and the substrate 1001a. Similarly, FIGS. 10B, 10E, and 10H show the transfer material B and the substrate 10
01b, a step of manufacturing a single-layer wiring board, FIGS. 10C, 10F, and 10I show transfer materials C and D and substrate 1
001c, a process for manufacturing a single-layer wiring board is shown. FIG. 10 (j) shows a multilayer wiring board E manufactured by laminating the three types of single-layer wiring boards. In addition, unless otherwise indicated, the single-layer wiring board,
It was produced in the same manner as in Example 5.

First, transfer materials A, B, C and D as shown in FIGS. 10 (a), (b) and (c) were prepared, respectively. First, by the same foil making method as in the first embodiment, the first
Metal layers 1002a, 1002b, 1002c, 100
As 2d, an electrolytic copper foil having a thickness of 35 μm was prepared.

Next, the first metal layers 1002a, 1002a,
Ni- on the rough surfaces of 002b, 1002c, and 1002d.
Release layers 1005a and 1005 made of a P alloy plating layer
b, 1005c, and 1005d are formed thinly to a thickness of 100 nm or less, and second metal layers 1004a, 1004b, 1004c, and 1
As 004d, a 9-μm-thick electrolytic copper foil was laminated by the same electrolytic plating method as in Example 1 to produce a three-layer laminate. Note that a chromium plating layer may be used as the release layer.

Next, the second metal layers 1004b and 1004c are etched from the side of the second metal layers 1004b and 1004c for forming the wiring pattern using a basic copper chloride aqueous solution capable of etching and removing only copper. Transfer materials B and C shown in FIGS. 10B and 10C were obtained by forming an arbitrary wiring pattern. Similarly, the second for forming the wiring pattern
The copper and Ni-P alloy plating layers are etched by a chemical etching method from the side of the metal layers 1004a and 1004d to form the second metal layers 1004a and 1004d in an arbitrary wiring pattern and to form the first metal layer 1002a. ,
Unevenness corresponding to the wiring pattern was formed on the surface layer of 1002d. Note that the convex portions correspond to the wiring pattern region, and the concave portions correspond to regions other than the wiring pattern. This allows
Transfer materials A and D shown in FIGS. 10A and 10D were obtained.

Next, as shown in FIGS. 10 (a), (b) and (c), substrate sheets 1001a, 1001b, 1
001c, the second metal layers 1004a, 1004b, 1004c, 1004 of the transfer materials A, B, C, D
Each was arranged so that d contacted. Note that FIG.
In (c), on both sides of the substrate sheet 1001c,
Transfer materials C and D were arranged respectively.

Then, as shown in FIGS. 10 (d), (e) and (f), the transfer materials A, B, C and D are
a, 1001b and 1001c at a temperature of 100
° C., by heating and pressurizing treatment for 5 minutes at a pressure of about ^{9.8 × 10 5 Pa (10kgf /} cm 2), the substrate sheet 1001a, 1001b, epoxy resin in 1001c is melted and softened, the second metal Layers 1004a, 1004b,
1004c and 1004d are the substrate sheets 1001
a, 1001b, and 1001c, respectively.

Next, the first metal layers 1002a, 1002b, 1002c, and 1002d are separated from the laminates by the release layers 1005a, 1005b, 1005c, and 1002a.
5d, the second metal layer 10
Only 04a, 1004b, 1004c, and 1004d are left on the substrate sheets 1001a, 1001b, and 1001c. Thereby, a single-layer wiring board having a flat surface (FIG. 10 (h)), a single-layer wiring board having a concave wiring layer portion (see FIG. 10 (g)), and one surface being flat And three types of single-layer wiring boards having a concave wiring layer portion on the other surface (see FIG. 10 (i)).

Finally, as shown in FIG. 10 (j), the three types of single-layer wiring boards are overlapped,
5 ° C., pressure about 7.84 × 10 ⁶ Pa (80 kgf / c
m ² ) for 1 hour under heat and pressure to cause thermosetting shrinkage, and a multilayer wiring board E was obtained. By this process, the substrate sheets 1001a, 1001b, 100
1c and conductive pastes 1003a, 1003b, 1
The epoxy resin in 003c is cured and the multilayer wiring board E
The mechanical strength of is maintained. Also, the second metal layer 100
4a, 1004b, 1004c, and 1004d are formed by conductive resin vias 1003a, 1003b, and 1003c.
Electrically connected to each other. As described above, since the multilayer wiring board E was subjected to thermal curing shrinkage after the single-layer wiring boards were superimposed, no via displacement occurred in the via-on-via structure.

The multilayer wiring board E manufactured as described above can form a fine wiring pattern with a line width of about 50 μm and has an IVH structure, so that it is useful as a very small and high-density mounting wiring board. Was. In particular, since the wiring pattern is formed by transfer using the transfer material according to the present invention, the wiring position shift on the surface layer where the fine wiring patterns are concentrated does not occur, so that an improvement in yield can be expected.

Further, since the mounting wiring layer on the surface on which the chip or the like is mounted has a concave shape, flip-chip mounting can be easily performed. The multilayer wiring board of the present invention is not limited to the above-described structure. For example, a single-layer wiring board having a wiring layer having the above-described recess may be used as the inner layer. In this case, low-resistance and highly-reliable via connection has also been confirmed in the multilayer substrate.

When the second metal layer is a copper foil, a gold plating layer may be formed on the second metal layer for the purpose of preventing oxidation. In this case, if the surface of the gold plating layer also has a concave portion with respect to the substrate surface, the creepage distance can be increased even with a fine wiring pattern, which is advantageous in terms of preventing migration.

In this embodiment, the composite substrate is used, but the substrate is not limited to this, and a ceramic green sheet may be used.
In this case, if only the firing process of the manufacturing process described in the present embodiment is changed, a multilayer wiring board can be realized by a similar manufacturing process.

Further, in the present embodiment, the first transfer material in which the wiring layer is a single metal layer is used as the transfer material. However, if the second or third transfer material is used, a plurality of metal layers are used. Can be realized.

(Embodiment 8) The first embodiment described in the first embodiment
By using the above transfer material, a multilayer wiring board was prepared by laminating a ceramic substrate and a substrate containing at least a thermosetting resin.

First, a ceramic wiring board 1608 (FIG. 1)
6 (b)), and a sheet-like base material to which a wiring pattern was transferred was prepared. This sheet-shaped base material was prepared by preparing a low-temperature fired ceramic green sheet containing a low-temperature fired ceramic material and an organic binder, providing a via hole in the green sheet, and filling the via hole with a conductive paste 1609. The component composition of the green sheet is shown below. (Ingredient composition of green sheet) ・ A mixture of ceramic powder Al ₂ O ₃ and lead borosilicate glass (manufactured by NEC Corporation: MLS-1000) 88% by weight ・ Methacrylic acid-based acrylic binder (manufactured by Kyoeisha Chemical: Oricox 7025) 10% by weight ・ BBP (manufactured by Kanto Chemical Co.) 2% by weight Each of the above components was weighed so as to have the above composition, and a toluene solvent was added to the mixture as a viscosity adjusting solvent, and the slurry viscosity of the mixture was about 10%. It added until it became 20 Pa.s. Then, a cobblestone of alumina was added thereto, and the mixture was rotated and mixed in a pot for 48 hours at a speed of 500 rpm to prepare a slurry.

Next, a release film having a thickness of 75 μm was prepared.
m of polyphenylene sulfide (PPS) film was prepared, and a gap of about 0. 0 was formed on the PPS film by a doctor blade method using the slurry.
A film was formed to a thickness of 4 mm to form a film-formed sheet. The toluene solvent in the sheet was volatilized to remove the PPS film, thereby producing a 220 μm-thick green sheet.
This green sheet had flexibility and good thermal decomposability because a plasticizer BBP was added to a methacrylic acid-based acrylic binder as an organic binder.

The green sheet is cut into a predetermined size by utilizing its flexibility, and a punching machine is used to cut the green sheet at a position having a pitch of 0.2 mm to 2 mm and a pitch of 0.15 mm. (Via holes) were provided. Then, a conductive paste 1609 for filling a via hole was filled into the through-hole by a screen printing method to produce the sheet-like base material. The conductive paste 160
9 prepares the following materials to have the following composition,
What was kneaded with three rolls was used. (Ingredient composition of conductive paste 1609) ・ Spherical silver particles (Mitsui Metal Mining Co., Ltd .: particle size 3 μm) 75% by weight ・ Acrylic resin (Kyoeisha Chemical: polymerization degree 100 cps) 5% by weight ・ Terpineol (Kanto Chemical Co., Ltd.) 15 wt% BBP (manufactured by Kanto Chemical Co., Ltd.) 5 wt% Next, the first transfer material described in the first embodiment is brought into contact with both surfaces of the sheet-like base material on the second metal layer side. Using a hot press, a heat press treatment was performed at a press temperature of 70 ° C. and a pressure of about 5.88 × 10 ⁶ Pa (60 kgf / cm ² ) for 5 minutes. By this heating and pressurizing treatment, the acrylic resin in the sheet-shaped base material is melted and softened, and the wiring layer (second metal layer), the release layer, and the carrier (first metal layer) of the first transfer material Was buried in the sheet-like base material.

After cooling such a laminate, the carrier of the first transfer material is peeled off from the laminate together with the release layer, so that only the second metal layer is left on the laminate, and FIG. As shown in b), a ceramic wiring board 1608 having a wiring layer 1610 made of a second metal layer on both surfaces
was gotten.

Then, the ceramic wiring board 1608
Alumina green sheets that were not sintered at the firing temperature were laminated on both sides, and the binder was fixed and removed by firing in a nitrogen atmosphere. First, in order to remove the organic binder in the ceramic wiring substrate 1608, the substrate was heated to 700 ° C. in a nitrogen atmosphere at a heating rate of 25 ° C./hour for 2 hours at a temperature of 700 ° C. using an electric furnace. Then, using a belt furnace, the ceramic wiring substrate 1608 subjected to the binder removal treatment was baked by treating it at 900 ° C. for 20 minutes in nitrogen. The conditions were as follows: a rise in temperature for 20 minutes, a fall in temperature for 20 minutes, and a total of 60 minutes for in-out. After firing, the alumina layer could be easily removed.

Further, as shown in FIG. 16B, a wiring board made of a composite material is sandwiched between the ceramic wiring boards 1608 manufactured as described above and as shown in FIGS. 16A to 16C. 1605, 1606, and 1607 were laminated to obtain a laminated body in which all layers were interconnected.

Here, a method of manufacturing the composite wiring board 1605 and the like will be described. FIG. 16 (a) and FIG.
As shown in the uppermost part of (b), using the first transfer material 1601 according to the present invention (similar to the first embodiment), the wiring pattern formed on the first transfer material is replaced with an uncured composite. By transferring to a sheet (same composition as in Example 5) 1602, a single-layer wiring board 1605 having a wiring pattern 1604 is manufactured. In the composite sheet 1602, a through-hole is formed, and the conductive paste 16 is formed.
03 is filled. In a similar manner, single-layer wiring boards 1606 and 16 using composite sheet 1602
07 is produced.

Thereafter, the ceramic wiring board 16
08, the composite single-layer wiring board 1605
１６０1607, a pressing temperature of 200 ° C. and a pressure of about 2.
The hot press treatment was performed at 94 × 10 ⁶ Pa (30 kgf / cm ² ) for 60 minutes. By this heating and pressurizing treatment, the acrylic resin in the composite sheet 1602 of the single-layer wiring boards 1605 to 1607 melts and softens, and as shown in FIG. 16C, all the wiring boards including the ceramic layer 1608 are cured and integrated. Was done.

A composite wiring board 1602 as shown in FIG. 11 or FIG.
And a multilayer wiring board including the ceramic wiring board 1608 was manufactured. This configuration is the same as the multilayer wiring board shown in FIG. 11 or FIG.

FIG. 11 produced by the method of this embodiment.
When the multilayer wiring board shown in FIG. 12 was observed using X-rays, no damage such as cracks was found in the ceramic layer.

When the via connection resistance of the multilayer wiring board was evaluated, a low-resistance via connection could be confirmed.

As shown in FIG. 11, when the ceramic wiring substrate 1608 was not formed with an inner via and a Ba—Ti—O-based ceramic was used as the capacitor layer,
A high capacitance value of 500 nF / cm ² was easily realized.

The inner electrode layer shown in FIG. 11 may be formed on the resin substrate layer 1602, or may be formed on the ceramic layer 1602.
8 may be formed.

Further, in this embodiment, the first transfer material is used for forming the wiring layer of each single-layer wiring board. However, if the second or third transfer material is used, a plurality of metal layers are used. A multilayer wiring board having a wiring layer can be manufactured.

(Embodiment 9) The structure is almost the same as that of Embodiment 8, except that the ceramic wiring board constituting the ceramic layer is made of a material such as Al ₂ O _{3 which} sinters only at a high temperature. Was manufactured as shown in FIGS. 17A to 17C.

The multilayer wiring board according to the present embodiment is a multilayer wiring board characterized by having a high-strength, high-thermal-conductivity substrate that cannot be realized by a low-temperature fired ceramic, and a low-resistance wiring such as a copper foil.

First, an alumina green sheet as a material for a ceramic wiring board was prepared. This was provided with a through-hole and fired before filling with a conductive paste described later.
In the firing step, in order to share the position data of the through-holes with a resin-based substrate (composite wiring board) to be described later, a green sheet made of SiC that is not sintered at the firing temperature is provided on both sides of the alumina green sheet. The layers were stacked, fixed by performing binder removal and firing in an air atmosphere. First, in order to remove the organic binder in the alumina green sheet, by heating in an electric furnace to 700 ° C. in a nitrogen atmosphere at a heating rate of 25 ° C./hour, and treating at a temperature of 1600 ° C. for 2 hours. The firing was performed. After firing, the SiC layer can be easily removed,
Al ₂ O ₃ substrate 1 sintered without shrinkage in the plane direction
708 could be obtained. In this embodiment, the non-shrinkage method using the constraining layer is used, but the shrinkage may be corrected and normal three-dimensional isotropic shrink sintering may be performed.

A 0.15 mm diameter through-hole formed in the Al ₂ O ₃ substrate 1708 was filled with a via-hole filling thermosetting conductive paste 1704 by screen printing. The conductive paste 170
As for No. 4, the one having the same component composition as the conductive paste described in Example 8 was used.

Further, as shown in FIG.
Composite sheet 1 sandwiches ₂ O ₃ substrate 1708
By laminating wiring substrates 1705 to 1707 using 702, as shown in FIG. 17C, a multilayer wiring substrate 1709 in which all-layer interlayer connection can be realized is obtained.

Here, a method of manufacturing the wiring boards 1705 to 1707 using the composite sheet 1702 will be described. As shown in FIG. 17A, a first transfer material 1701 (similar to Example 8) of the present invention is pressed onto an uncured composite sheet 1702 (similar to the configuration of Example 8).

Note that the composite sheet 1702 has
A through hole is formed, and the same conductive paste 1704 as the paste filled in the Al ₂ O ₃ substrate 1708 is filled. The same data as that used when forming the through-hole in the Al ₂ O ₃ substrate 1708 was used as the position data when the through-hole was formed.

Then, in the same manner as in the eighth embodiment, the carrier of the first transfer material is peeled off together with the release layer, so that only the wiring layer of the first transfer material becomes a composite sheet 1702.
Will be left. As a result, as shown in the uppermost part of FIG. 17B, a composite wiring board 1705 having the wiring layer 1703 is manufactured. Composite wiring boards 1706 and 1707 are manufactured in the same manner.

Thereafter, the composite wiring substrates 1705 to 1707 are laminated on both sides of the Al ₂ O ₃ substrate 1708, and the pressing temperature is 200 ° C. and the pressure is about 2.94 × 10 ⁶ Pa
(30 kgf / cm ² ) for 60 minutes. This heating and pressing treatment, the composite wiring acrylic resin in the substrate 1705 to 1707 is melted and softened, as shown in FIG. _{17 (c), Al 2 O} 3 substrate 1708
Is cured and integrated, and the multilayer wiring board 170
9 were made. This configuration is the same as that of the multilayer wiring board shown in FIG.

When the multilayer wiring board shown in FIGS. 17 (c) and 13 was observed using X-rays, no damage such as cracks was found in the Al ₂ O ₃ layer. Since the Al ₂ O ₃ layer has a high mechanical strength, the pressing pressure is set to about 9.8 × 10 ⁶ P
Even at a (100 kgf / cm ² ), no damage such as cracks was observed, and a multilayer wiring board excellent in mechanical strength such as joint strength was obtained.

When the via connection resistance of the multilayer wiring board 1709 was evaluated, the copper foil wiring formed on the composite layer functioned as a low resistance wiring formed on the Al ₂ O ₃ layer,
Low resistance via connection and wiring resistance could be confirmed. Note that the thermal conductivity of the multilayer wiring board 1709 also achieved a high thermal conductivity of about 6 W / m · K because a high thermal conductive composite sheet was used as the resin-based substrate.

In this embodiment, the inner via is formed using the same conductive resin paste for the ceramic layer and the composite layer, but different thermosetting conductive pastes may be used. Further, the substrate used for the ceramic layer is not limited to Al ₂ O ₃ , and any of AlN having high thermal conductivity and glass ceramic fired at low temperature may be used.

(Embodiment 10) In contrast to the multilayer wiring board according to Embodiment 8 or 9 in which a wiring board using a resin-based sheet is provided on the surface layer and a ceramic wiring board is provided on the inner layer, the present embodiment is different from the present embodiment. In the example, as shown in FIG. 14, a ceramic layer 1801, a resin-based sheet 1803, a ceramic layer 18
02 are stacked in this order. That is, a ceramic wiring board is disposed on a surface layer, and a wiring board using a resin-based sheet is disposed on an inner layer.

The multilayer wiring board according to the present embodiment has a ceramic layer
Nd to 1801_TwoO_Five・ TiO_Two・ SiO_TwoGlass Sera
High dielectric constant layer such as Mic, ceramic layer 1802 Al
_TwoO _ThreeUse low dielectric constant layer composed of layer and borosilicate glass
Different types having different dielectric constants through the resin-based sheet 1803
Lamination has been realized.

However, the ceramic layer is not limited to such a combination, and a different kind of laminated body such as a magnetic material such as ferrite and a Ba-Ti-O-based dielectric is also realized.

The advantages of the present multilayer wiring board are as follows. First, when different types of ceramic layers are directly laminated,
Combination may be difficult depending on the type of ceramic layer due to problems such as mutual diffusion and warpage. However, by interposing a resin sheet between ceramic layers, different types of ceramic layers can be easily realized regardless of the type of ceramic layer. it can. Second
In addition, since the resin sheet is interposed between the ceramic layers, the ceramic layers are not damaged such as cracks during lamination.

The multilayer wiring board of this example was manufactured as shown in FIG.

First, an Nd ₂ O ₅ .TiO ₂ .SiO ₂ -based glass ceramic green sheet 1801 and a green sheet 1802 composed of an Al ₂ O ₃ layer and borosilicate glass
(Same as Example 8) was prepared.

After these were provided with via holes and filled with the conductive paste 1803 (same as in Example 8),
As shown in FIG. 8A, the transfer materials 1804 and 1805 on which the wiring patterns are formed are stacked while being aligned from both sides to form a laminate, and as shown in FIG.
By heating and pressurizing in, the carrier was peeled off, so that the wiring patterns of the transfer materials 1804 and 1805 were transferred and formed on the green sheet 1801 as shown in FIG. In the same manner, the wiring pattern was transferred to the green sheet 1802.

In this embodiment, since a pin lamination is used as a positioning means when the laminate is manufactured, a through hole of 3 mmφ to 3.3 mmφ is formed at a predetermined position of the green sheets 1801 and 1802. I left it. Since the green sheets 1801 and 1802 share the position data of the through holes with the resin-based substrate, it is necessary that the green sheets 1801 and 1802 do not shrink in the firing step. For this reason, on both sides of the laminate, A
The green sheets composed of l ₂ O ₃ were laminated, fixed by performing binder removal and firing in an air atmosphere. First, an electric furnace was used to remove the organic binder in the green sheets 1801 and 1802.
The sintering was performed by heating in a nitrogen atmosphere to 700 ° C. at a rate of temperature increase of 700 ° C./hour and treating at 900 ° C. for 2 hours. After firing, the Al ₂ O ₃ layer can be easily removed, and Nd ₂ O ₅ sintered without shrinkage in the plane direction.
A TiO ₂ .SiO ₂ based substrate (1801) and an Al ₂ O ₃ based glass ceramic substrate (1802) were obtained.

Next, as shown in FIG. 18D, between ceramic layers, that is, green sheets 1801 and 180
2, a composite sheet 1807 filled with a conductive paste 1806 is arranged, and is pre-aligned with a pin, and then pressed at a temperature of 170 ° C. and a pressure of about 7.84 × 10 ^6.
A hot press treatment was performed at Pa (80 kgf / cm ² ) for 30 minutes.

Here, the diameter of the positioning pin is 3 mm.
In the case of φ, the via holes not filled with the paste partially contracted, and it was difficult to pass the pins in some of the via holes. However, in the via hole punched slightly larger (about 3.06 mmφ to about 3.3 mmφ) in anticipation of the amount of shrinkage, the pin could be penetrated without any problem. In such a case, the punching diameter is 3 m
The diameter of the pin may be made smaller than 3 mmφ while keeping the diameter of mφ.

Further, the epoxy resin in the composite sheet 1807 is melted and softened by the heating and pressurizing treatment at the time of the laminating press, so that the green sheet 1 as a ceramic layer is formed.
Multilayer wiring board integrated with 801 and 1802 (FIG. 18)
(E)) was obtained. This configuration is similar to the configuration in FIG.

The composite sheet 18 of this embodiment
No wiring pattern is formed at 07, but in some cases, the wiring pattern may be transferred in an uncured state.

In this embodiment, a composite sheet made of an inorganic filler and an epoxy resin is used.
The present invention is not limited to this, and may be any of a resin sheet containing no inorganic filler, a prepreg containing glass cloth, and a prepreg composed of an aramid resin and a glass woven fabric.

Further, in this embodiment, the sintering method which is almost non-shrinkage in the plane direction is used. However, the sintering method which is three-dimensionally isotropic may be used by correcting the shrinkage. Absent.

When the multilayer wiring board shown in FIG. 18E was observed, no damage such as cracks was found in the ceramic layer.

Further, when the via connection resistance of this laminated body was evaluated, a low-resistance via connection could be confirmed. Further, after the multilayer wiring board has absorbed moisture (85 ° C., 85 Rh, 16
8hr) at 230 ° C through a reflow furnace (JE
DEC Level 1), it was possible to realize a via connection with extremely small resistance variation as compared with the via connection resistance when only a resin-based substrate was laminated. This is an effect due to the high moisture absorption resistance of the ceramic layer.

On the other hand, for example, as shown in FIG.
(Or the structure of the ceramic layer and the resin-based layer is the same as that of the present embodiment) in which a resin-based layer 1807 is further laminated on both surfaces of the multilayer wiring board shown in FIG.
As a result of a drop test, it was confirmed that damages such as cracks were extremely unlikely to occur as compared with the configuration of the ceramic wiring substrate alone.

The base material used for the resin-based layer 1807 as the outermost layer does not need to be the composite sheet used for the inner layer, and can be selected according to the intended use such as glass epoxy.

From these results, according to the present embodiment,
It has been found that a substrate having both the advantages of the ceramic and the advantages of the resin system can be realized.

As described above, according to the present invention, it is possible to provide a transfer material capable of transferring a fine wiring pattern reliably and easily at a low temperature without a pattern shift. It is possible to realize a wiring board having a simple wiring pattern and advantageous for flip-chip mounting of a semiconductor.

Furthermore, since the wiring layer is formed in a convex shape in the transfer material, the IVH is easily compressed, which is advantageous in stabilizing the via connection.

Further, since the transfer material of the present invention transfers only the wiring pattern (the second metal layer or the like), the constituent material of the first metal layer as a carrier can be reused, and the cost can be reduced. And is extremely useful industrially.

The wiring substrate of the present invention has a configuration in which the wiring portion does not protrude from the substrate by using the transfer material of the present invention. Thus, using the wiring board of the present invention, a multilayer wiring board in which a ceramic wiring board and a resin-based wiring board are stacked, which has conventionally been difficult to form due to damage to the ceramic layer during lamination, can be easily manufactured. be able to.

In each of the transfer materials in Examples 1 to 10, a circuit component such as an inductor, a capacitor, a resistor, or a semiconductor element is formed so as to be electrically connected to the wiring pattern, and transferred to a substrate together with the wiring pattern. It is also possible. The passive components such as the inductor, the capacitor, and the resistor are preferably formed on the transfer material by a printing method such as screen printing.

(Embodiment 5) In each of the above embodiments,
The transfer material (first to third transfer materials) used for transferring the wiring pattern to the substrate has been described. However, in the following embodiments, other transfer materials according to the present invention will be described. Will be described below.

One embodiment (hereinafter, referred to as a fourth transfer material) of the transfer component wiring pattern forming material according to the present invention is schematically shown in cross-sectional views of FIGS. 19 (a) and 19 (b).

As shown in FIG. 19A, a transfer material 2001A as one mode of the fourth transfer material includes a release carrier metal foil 2101 which is a first metal layer, and a fourth transfer material formed thereon. A circuit component, that is, an inductor is formed on a transfer wiring pattern forming material formed in a two-layer structure with a wiring metal foil 2102 which is a second metal layer so as to be electrically connected to the wiring metal foil 2102. 2103, capacitor 210
4, and the resistor 2105 are formed by a printing method.

As shown in FIG. 19B, a transfer material 2001B as another form of the fourth transfer material has basically the same configuration as the transfer material 2001A in FIG. 19A. In addition to passive components such as inductor 2103, capacitor 2104 and resistor 2105, semiconductor chip 2
In this embodiment, active components such as 106 are flip-chip mounted at the connection portion 2107 so as to be connected to the metal foil 2102 for wiring.

After each of the transfer materials shown in FIGS. 19A and 19B is pressed against a substrate,
By peeling only 1, the components excluding the release carrier 2101, that is, the passive components such as the metal foil for wiring 2102, the inductor 2103, the capacitor 2104 and the resistor 2105, and the active components such as the semiconductor chip 2106 are transferred to the substrate. can do.

(Embodiment 6) FIG. 20 shows a schematic configuration of an embodiment of another transfer component wiring pattern forming material (hereinafter, referred to as a fifth transfer material) of the present invention.

As shown in FIG. 20, the fifth transfer material 200
2 is a release carrier metal foil 220 which is a first metal layer.
1, a release layer 2202 formed thereon, and a wiring metal foil 22 as a second metal layer further formed thereon
The inductor 2204, the capacitor 2205, and the resistor 2206 are formed by a printing method on a transfer wiring pattern forming material formed in a three-layer structure of No. 03 so as to be electrically connected to the wiring metal foil 2203. Configuration.

(Embodiment 7) FIG. 21 shows a schematic configuration of an embodiment of still another transfer component wiring pattern forming material (hereinafter, referred to as a sixth transfer material) of the present invention.

As shown in FIG. 21, the sixth transfer material 200
3 is a release carrier metal foil 230 which is a first metal layer.
1, an exfoliation layer 2302, and an inductor 2304 on a transfer wiring pattern forming material having a three-layer structure of a wiring metal foil 2303 as a second metal so as to be electrically connected to the wiring metal foil 2303. , Condenser 2305
And the resistor 2306 are formed by a printing method.

The metal foil 2301 for a release carrier has an uneven portion on the surface layer. The protrusion corresponds to a wiring pattern, and a release layer 2302 made of an organic layer or a metal plating layer and a metal foil 2303 for wiring are formed on the protrusion region.
Are formed. The metal foil for release carrier 2301 and the metal foil for wiring 2303 are bonded to each other with a release layer 2302 interposed therebetween.

In the fourth to sixth transfer materials,
It is preferable that the adhesive strength between the first metal layer and the second metal layer is weak, for example, 50 N / m (gf / cm) or less. In the fourth transfer material, by using a plating method, a vapor deposition method, or the like, the two metal layers are not peeled off under processes such as etching, plating, and washing with water. Only it is recognized that it can be peeled off. Further, the passive component pattern formed by printing can be easily separated from the first metal layer as a carrier.

On the other hand, in the fifth and sixth transfer materials, an organic layer having an adhesive force and less than 1 μm is used as a release layer. As a material for the organic layer, for example, a thermosetting resin such as a urethane-based resin, an epoxy-based resin, or a phenol resin can be used. However, the material is not limited thereto, and another thermoplastic resin or the like may be used. However, when the thickness is more than 1 μm, the peeling performance is deteriorated and the transfer may be difficult.

On the other hand, for the purpose of intentionally lowering the adhesive strength, a plating layer may be interposed as a release layer. For example, a metal plating layer, a nickel plating layer, a nickel phosphorus alloy layer, an aluminum plating layer, or the like, which is thinner than 1 μm, may be interposed between the copper foils so as to have releasability.

Thus, with respect to the wiring portion made of the second metal layer, the second metal layer is easily peeled off from the first metal layer when transferred to the substrate, and the second metal layer is easily transferred. And it becomes easy to transfer the component pattern to the substrate. When the release layer is a metal plating layer, 100 nm to 1
A thickness level of μm is sufficient, and the thicker the thickness, the higher the cost in the process.

In the fifth and sixth transfer materials, the second metal layer and the passive component pattern formed by printing are:
It can be easily separated from the first metal layer which is a carrier.

Also, in the fourth to sixth transfer materials,
Preferably, the first metal layer contains at least one metal selected from the group consisting of copper, aluminum, silver and nickel. In particular, it is preferable to contain copper. Also, the second
The metal layer preferably contains at least one metal selected from the group consisting of copper, aluminum, silver and nickel as in the case of the first metal layer. In the case of the fourth transfer material, silver is used. In the case of the fifth or sixth transfer material, it is preferable to include copper. This is because when copper is used for the first metal layer, it is inexpensive, that is, there are many commercially available foils having a predetermined thickness. Also,
This is because when copper is used for the second metal layer, it can be easily formed by plating.

In the case of the sixth transfer material, if the first metal layer and the second metal layer are the same, there is an effect that processing can be controlled with the same etchant. In particular, when the metal layer is copper, there is an advantage that conditions for performing fine processing by etching have already been well studied. The metal may be one kind, or two or more kinds may be used in combination.

Further, in the sixth transfer material, for example, when etching or the like is performed to remove the release layer and the surface layer of the first metal layer by etching (see FIG. 21),
It is preferable that the first metal layer and the second metal layer include metals of the same component. Note that when a plating layer is used as the peeling layer, the configuration shown in FIG. 21 can be processed with a copper etching solution, and the configuration shown in FIG. 20 cannot be processed with a copper etching solution. When the first metal layer and the second metal layer contain the same component metal as described above, the type of the metal is not particularly limited, but is preferably made of copper foil, and is excellent in conductivity. Therefore, an electrolytic copper foil is particularly preferable. The metal may be used alone or in combination of two or more.

[0311] In the fourth to sixth transfer materials, the thickness of the second metal layer is preferably in the range of 1 to 18 µm, and particularly preferably in the range of 3 to 12 µm. If the thickness is less than 3 μm, the second metal layer may not show good conductivity when transferred to a substrate, and if the thickness is more than 18 μm, a fine wiring pattern may be formed. This can be difficult.

In the fourth and fifth transfer materials, the thickness of the first metal layer is preferably in the range of 4 to 100 μm, particularly preferably in the range of 20 to 70 μm. The first metal layer functions as a carrier, and in some cases, as shown in FIG. 21, the surface layer is etched to have a structure having irregularities as in the case of the wiring layer. It is desirable that
In addition, the fourth to sixth transfer materials have sufficient mechanical strength and heat resistance against thermal distortion generated at the time of transfer and stress distortion in a plane direction by using a metal layer (first metal layer) as a carrier layer. Shows sex.

The material for forming the passive component electrically connected to the wiring pattern is a paste-like material. When the substrate to which the passive component is to be transferred is a substrate made of, for example, a thermosetting resin, it is preferable to use a material containing the same thermosetting resin as the material of the passive component. When forming an inductor, magnetic metal powder or ferrite is used as a filler mixed with a thermosetting resin. When a capacitor is formed, similarly, a ceramic powder having a high dielectric constant such as barium titanate or a Pb-based perovskite is used as a filler. When various resistors are formed, carbon or the like is used as a filler. In this case, the resistance value can be adjusted by changing the content ratio of carbon. When the resistor is formed as a thin film, a nichrome alloy, chrome silicon,
Tantalum nitride, ITO, or the like is used.

On the other hand, if the fourth or fifth transfer material is used, pattern transfer can be performed at a low temperature of 100 ° C. or less, so that a component wiring pattern can be formed on a ceramic green sheet.

On the other hand, when the substrate to which the passive component is to be transferred is a ceramic, the material (paste) used for printing the passive component is preferably one in which only the filler remains by the debinding step. Accordingly, a vehicle in which a binder having good thermal decomposability is dissolved, for example, a paste using a vehicle in which a binder is dissolved in terpineol is used. Specifically, the inductor described above,
A capacitor and various fillers corresponding to the resistance characteristics are kneaded with the vehicle by a three-roll mill or the like to form a paste-form material that can be screen-printed.

In the case of forming an inductor, magnetic metal powder or ferrite which is sintered at a low temperature is used as a filler, and a material obtained by mixing this with glass is used. When a capacitor is formed, similarly, barium titanate and glass, Pb-based perovskite, or the like is used as a filler. When forming a resistor, ruthenium pyrochlore, ruthenium oxide, or lanthanum bolite is used as a filler, and a material obtained by mixing this with glass is used. These can be fired simultaneously with the substrate ceramic fired at a low temperature, and the resistance value can be adjusted relatively easily even in the case of the inner layer resistor.

(Embodiment 8) In this embodiment, an example of a method for manufacturing the above-described fourth transfer material (see FIGS. 19A and 19B) will be described.

This manufacturing method is described in (1) FIGS.
As shown in (e), the first metal layer 24 as a carrier is formed.
(2) forming a two-layer structure in which a second metal layer 2403 as a wiring pattern is directly attached on the first metal layer 01;
As shown in FIGS. 22E and 22E, the component patterns 2405, 2406, and 24 are printed by printing while being positioned so as to be electrically connected to the second metal layer 2403.
07, 2408.

In the steps shown in FIGS. 22A to 22E, a reverse pattern of the wiring pattern is formed on the first metal layer 2401 using the dry film resist 2404, and then the electroless plating or the electrolytic plating is performed. Using a direct drawing method such as a pattern plating method, a sputtering method, and a vapor deposition method including a metal foil (second metal layer 24).
03) is formed. As a result, a fine wiring pattern can be formed.

In the case of plating, the metal foil constituting the second metal layer 2402 may be the same as the metal foil constituting the first metal layer 2401 (eg, copper foil) or may be a different metal. It may be constituted by a silver plating film. Also,
The metal foil of the first metal layer can be reused. Therefore, the cost can be reduced and the industrial use is excellent.

A printing method is most suitable as a method for forming a passive component so as to be electrically connected to the wiring pattern. Printing methods include offset printing, gravure printing,
Although any method such as screen printing may be used, a screen printing method is more preferably used. As far as the pattern used for the resistor is limited, a thin film of 1 μm or less may be appropriate in some cases. In this case, a dielectric layer may be deposited by a PVD method or a CVD method.

The line width of the wiring pattern is usually required to be as fine as about 25 μm, and such a line width is preferable in the present invention.

(Embodiment 9) Next, an example of a method of manufacturing the fifth transfer material (see FIG. 20) will be described with reference to FIGS.
(F).

This manufacturing method comprises the steps of (1) as shown in FIG. 23A, a release layer 2502 made of an organic layer or a metal plating layer and a first metal layer 2501 formed on the first metal layer 2501. Second metal layer 2503 containing metal of the same component
And forming a three-layer structure by laminating (2) FIG.
As shown in FIGS. 3B to 3E, only the second metal layer 2503 is processed into a wiring pattern shape by the chemical etching method, and the transfer wiring pattern 2503a (FIG. (E), and (3) as shown in FIG. 23 (f), a part pattern (inductor 2503a) by printing while being aligned so as to be electrically connected to the wiring pattern 2503a.
5, forming a capacitor 2506 and a resistor 2507).

In the step (2) of forming the wiring pattern 2503, in the step shown in FIG. 23B, a dry film resist 2504 is attached on the second metal layer 2503. In the step shown in FIG. 23C, a wiring pattern region 2504a is formed by pattern exposure. In the step shown in FIG. 23D, the region (2) other than the wiring pattern region 2504a is developed and etched.
The dry film resist of 504b) is removed. In the step shown in FIG. 23E, the remaining dry film resist is stripped.

The chemical etching can be specifically performed, for example, as follows. When a basic cupric chloride aqueous solution containing ammonium ions is used as an etchant, only the second metal layer 2503 can be etched when the release layer 2502 is made of, for example, a nickel-phosphorus alloy layer. Thereafter, when a mixed solution of nitric acid and hydrogen peroxide is used as an etching solution, only the peeling layer 2502 can be removed. According to this method, the surface of the substrate can be flattened without the wiring portion transferred to the substrate becoming a concave portion.

(Embodiment 10) Next, an example of a method of manufacturing the sixth transfer material (see FIG. 21) will be described with reference to FIGS.
(F).

The steps of FIGS. 24A to 24C are the same as those of the fifth embodiment of the manufacturing method of the transfer material according to the ninth embodiment, but the following steps are different.

That is, in the fifth transfer material manufacturing method,
Only the second metal layer and the release layer were patterned by chemical etching.
4 (d) and (e), by chemical etching,
The surface portion of the first metal layer 2601 is also processed into a wiring pattern shape. That is, an uneven portion is formed in a surface layer portion of the first metal layer 2601. Then, as shown in FIG. 24 (f), component patterns (inductor 2605, capacitor 2606, resistor 2607) are formed by printing while being positioned so as to be electrically joined to the wiring pattern shape.

According to the above-described fourth to sixth transfer material manufacturing methods, since the metal layer of the wiring pattern is formed by chemical etching such as photolithography, a fine wiring pattern can be formed. Is possible.
In the case of the sixth transfer material manufacturing method, the metal foil constituting the wiring pattern (second metal layer) is transferred to the carrier (first metal layer).
Of the carrier can be formed in the same concavo-convex shape as the wiring pattern by a single etching process.

As described above, it is possible to reuse the constituent materials of the transfer material other than the second metal layer. In particular, in the case of the sixth transfer material, utilizing the fact that the first metal layer is processed into a wiring pattern shape, the first metal layer is re-formed into a different pattern formation as letterpress printing. It is also possible to use it. For this reason, cost reduction is possible and it is excellent in industrial use.

In the fourth to sixth transfer material manufacturing methods, the second metal layer may be formed by an electrolytic plating method. Further, another metal layer (third metal layer) may be formed on the second metal layer by an electrolytic plating method. If the third metal layer or the second metal layer for forming a wiring pattern is formed by an electrolytic plating method, a proper adhesive property can be obtained on the bonding surface between the second metal layer and the third metal layer. In addition, no gap is generated between the metal layers. Thereby, a good wiring pattern can be formed even when, for example, etching is performed. Alternatively, on the second metal layer,
After forming the third metal layer by panel plating, masking may be performed in a wiring pattern shape to form a pattern. In this case, it is effective in preventing surface oxidation of the second metal layer after transfer and improving solder wettability.

In this method of manufacturing a wiring pattern for transfer, it is preferable that the surface of the second metal layer is roughened before the third metal layer is formed on the second metal layer. The “before forming the third metal layer” refers to the second metal layer.
Before forming a wiring pattern mask on the second metal layer or before forming a third metal layer along the wiring pattern on the second metal layer masked in the wiring pattern. As described above, when the second metal layer is subjected to a surface roughening treatment, the adhesion between the second metal layer and the third metal layer is improved.

Further, in the above method for producing a transfer material,
A fourth metal layer made of a metal different from the first to third metal layers may be formed on the third metal layer by an electrolytic plating method. By selecting a metal component that is chemically stable to an etchant that corrodes the first to third metal layers as a material of the fourth metal layer, a chemical etching method Thereby, each metal layer including the surface layer portion of the first metal layer can be processed into a wiring pattern without reducing the thickness of the second, third, and fourth metal layers.

As the fourth metal layer, for example, a chemically stable and low-resistance Ag or Au plating layer is desirable. Since these are hardly oxidized metals, the connectivity between the wiring layers plated with them and, for example, vias formed on a substrate in advance, bumps of bare chips, or conductive adhesives can be further stabilized. .

In the method of manufacturing the fifth or sixth transfer material, the method of forming the passive component pattern so as to be electrically connected to the wiring pattern may be the same as in the case of the fourth transfer material. The method is optimal. When the release layer is composed of a plating layer such as a nickel plating layer or a nickel phosphorus alloy layer, offset printing,
Although any of gravure printing and screen printing can be applied, a screen printing method is more preferably used.

The material used for printing the component pattern is preferably in the form of a paste. As in the case of the fourth transfer material, when the substrate to which the component is to be transferred is, for example, a substrate configured with a thermosetting resin as a component, the component pattern material includes a thermosetting resin. Things are used. For example, when forming an inductor, magnetic metal powder or ferrite can be used as a filler mixed with a thermosetting resin. When forming a capacitor, similarly, barium titanate, Pb-based perovskite, or the like can be used as a filler. When forming a resistor, carbon is used as a filler. The resistance value can be controlled by changing the carbon ratio. Note that the resistor may be formed of a thin film as described above. The material of the resistor and its manufacturing method are as follows:
This is the same as described in the description of the fourth transfer material manufacturing method.

Since the fifth transfer material can perform pattern transfer formation at a low temperature of 100 ° C. or lower similarly to the fourth transfer material, a component wiring pattern can be formed on a ceramic green sheet.

When the substrate on which the component is to be transferred is a ceramic, the material (paste) used for printing the component pattern is preferably one in which only the filler remains by the debinding step. Accordingly, a vehicle in which a binder having good thermal decomposability is dissolved, for example, a paste using a vehicle in which a binder is dissolved in terpineol is used. Specifically, the above-described inductor, capacitor, and various fillers corresponding to the resistance characteristics are kneaded with the vehicle using a three-roll or the like to form a paste-form material that can be screen printed.

When forming an inductor, glass and
As the filler, a material mixed with magnetic metal powder or ferrite which sinters at a low temperature is used. When a capacitor is formed, similarly, barium titanate and glass, Pb-based perovskite, or the like is used as a filler. When forming a resistor, ruthenium pyrochlore, ruthenium oxide, lanthanum bolite, or the like is used as a glass filler. These can be fired simultaneously with the low-temperature fired substrate ceramic, and the adjustment of the resistance value is relatively easy even in the case of the inner resistor.

These two types of fifth and sixth transfer component wiring patterns can be used properly. For example, when the component wiring pattern formed on the transfer material is transferred to the inner layer of the laminated substrate, particularly when a via is formed immediately above the via, the transfer material (fifth transfer) shown in FIG. Is preferable from the viewpoint of via connection.

On the other hand, when the image is transferred to the surface layer, especially when the distance between the terminals of the inductor, the capacitor, the semiconductor chip, and the like is short, the creepage distance is increased.
The transfer forming material (sixth transfer material) partially processed up to the carrier layer shown in FIG. 21 is preferable.

(Embodiment 11) Next, the form of a circuit board manufactured using the fourth to sixth transfer materials will be described with reference to FIG.
2 (g) (g '), FIG. 23 (h), and FIG. 24 (h)
Shown in

As a method of manufacturing a circuit board using the fourth to sixth transfer materials, there are at least the following two manufacturing methods. The first manufacturing method described in the present embodiment includes the fifth to fifth methods.
The transfer material according to the seventh embodiment (see FIG. 22E)
23 (f) and 24 (f)) are prepared, and the transfer material is arranged such that the side on which the component wiring pattern is formed is in contact with at least one surface of the sheet-like base material. Bonding step (see: FIG. 22 (f), FIG. 23)
(G), FIG. 24 (g)), by peeling the first metal layer as a carrier from the transfer material adhered to the sheet-like base material, the sheet-like base material has at least a second metal layer. Transferring a component wiring pattern layer including a layer and a component pattern.
FIG. 22 (g), FIG. 23 (h), FIG. 24 (h)).

As a result, the fine wiring pattern and the component pattern including the inductor, capacitor, resistor, and semiconductor chip are placed flat on the sheet-like base material (see FIGS. 22 (g) and 23 (h)). )) Or a concave shape (see FIG. 24 (h)). Further, in the wiring board manufactured in this manner, for example, when the wiring portion has a concave shape (FIG. 24 (h)), for example, the alignment between the wiring portion and the bump of the semiconductor chip becomes easy, and Excellent for flip chip mounting.

(Embodiment 12) A second method of manufacturing a circuit board according to the present invention is a method of manufacturing a multilayer circuit board shown in FIG. 25, and is obtained by the manufacturing method of Embodiment 11. Circuit boards (FIG. 22 (g), FIG. 23 (h),
24 (h) and the like are stacked in two or more layers.

Here, reference numerals 2702 and 2709 denote second metal layers for forming wiring patterns, and 2703 denotes a resistor, 270
4 is a capacitor, 2705 is an inductor, and 2706 is a sheet-like base material.

This circuit board can be used at a low temperature of 100 ° C. or less.
Since part patterns and wiring patterns can be transferred and formed,
The uncured state can be maintained not only in the ceramic green sheet but also in a sheet using a thermosetting resin. Thus, after laminating two or more layers of the circuit board in an uncured state, it is possible to simultaneously perform thermosetting shrinkage.

Therefore, in a multilayer circuit board having four or more layers, it is not necessary to correct cure shrinkage for each layer. Thereby, a circuit board having a multilayer structure having fine wiring patterns and component patterns can be manufactured. However, the wiring portion and the component portion forming the inner layer need not be concave as described above, and may be flat.
The circuit board shown in FIG. 3 (h) can be used.

In each of Embodiment 11 and the manufacturing method described in this embodiment, the sheet-like base material is
It is preferable that the resin composition includes an inorganic filler and a thermosetting resin composition, has at least one through hole, and the through hole is filled with a conductive paste. This makes it possible to easily obtain a high-density mounting composite wiring board having excellent heat conductivity and having an IVH structure in which the wiring patterns are electrically connected by the conductive paste.

When this sheet-shaped substrate is used, a high-temperature treatment is not required in the production of a wiring board. For example, a low-temperature treatment of about 200 ° C., which is the curing temperature of a thermosetting resin, is sufficient. .

The proportion of the inorganic filler is preferably from 70 to 95% by weight, and the proportion of the thermosetting resin composition is preferably from 5 to 30% by weight, particularly preferably from the entire sheet-like substrate. The ratio of the inorganic filler is 85 to 85;
90% by weight, and the ratio of the thermosetting resin composition is 1
0 to 15% by weight. Since the sheet-like base material can contain the inorganic filler at a high concentration, it is possible to arbitrarily set a coefficient of thermal expansion, a thermal conductivity, a dielectric constant, and the like in the wiring board according to the content.

The inorganic filler may be Al ₂ O ₃ , MgO,
It is preferable that at least one inorganic filler selected from the group consisting of BN, AlN and SiO ₂ is used.
By appropriately determining the type of the inorganic filler, it is possible to set, for example, thermal conductivity, thermal expansion, and dielectric constant to desired conditions. For example, it is possible to set the thermal expansion coefficient in the planar direction of the sheet-like base material to be substantially the same as the thermal expansion coefficient of the semiconductor to be mounted, and to impart high thermal conductivity.

Among the inorganic fillers, for example, Al
A sheet-like substrate using ₂ O ₃ , BN, AlN or the like has excellent thermal conductivity, and a sheet-like substrate using MgO has excellent thermal conductivity and a large thermal expansion coefficient. Also,
When SiO ₂ , particularly amorphous SiO _2, is used, a light, low dielectric constant sheet-like substrate having a small coefficient of thermal expansion can be obtained. The inorganic filler may be of one type or two or more types may be used in combination.

The sheet-like substrate containing the inorganic filler and the thermosetting resin composition can be produced, for example, as follows. First, a viscosity adjusting solvent is added to a mixture containing the inorganic filler and the thermosetting resin composition to prepare a slurry having an arbitrary slurry viscosity. As the viscosity adjusting solvent, for example, methyl ethyl ketone, toluene and the like can be used.

Then, a film is formed on the release film prepared in advance using the slurry by, for example, a doctor blade method or the like, and is processed at a temperature lower than the curing temperature of the thermosetting resin to obtain the viscosity. After volatilizing the adjusting solvent, the release film is removed, whereby a sheet-like substrate can be produced.

The film thickness at the time of forming the film is appropriately determined depending on the composition of the mixture and the amount of the viscosity adjusting solvent to be added, and is usually in the range of 80 to 200 μm.
The conditions for volatilizing the viscosity adjusting solvent are appropriately determined depending on, for example, the type of the viscosity adjusting solvent and the type of the thermosetting resin.
C. for 5-15 minutes.

As the release film, generally, an organic film can be used. For example, at least one selected from the group consisting of polyethylene, polyethylene terephthalate, polyethylene naphthalate, polyphenylene sulfide (PPS), polyphenylene terephthalate, polyimide and polyamide An organic film containing one resin is preferable, and PPS is particularly preferable.

In addition, a sheet-like reinforcing material impregnated with a thermosetting resin composition has at least one through hole, and the through hole is filled with a conductive paste. Substrates can be used.

The sheet-like reinforcing material is not particularly limited as long as it can hold the thermosetting resin. However, the woven fabric of glass fiber, the nonwoven fabric of glass fiber, the woven fabric of heat-resistant organic fiber, and the heat-resistant organic fiber Preferably, it is at least one sheet-like reinforcing material selected from the group consisting of nonwoven fabrics. Examples of the heat-resistant organic fiber include wholly aromatic polyamide (aramid resin), wholly aromatic polyester, polybutylene oxide and the like, and among them, aramid resin is preferable.

The thermosetting resin is not particularly limited as long as it has heat resistance. However, since it is particularly excellent in heat resistance, a group consisting of an epoxy resin, a phenol resin, a cyanate resin, a polyphenylene phthalate resin, and a polyphenylene ether resin. It is preferable to include at least one resin selected from the group consisting of: Further, the thermosetting resin may be any one type, or two or more types may be used in combination.

[0362] Such a sheet-like substrate can be produced, for example, by immersing the sheet-like reinforcing material in the thermosetting resin composition and then drying it to make it into a semi-cured state.

It is preferable that the impregnation is performed so that the ratio of the thermosetting resin in the entire sheet-like substrate is 30 to 60% by weight.

In these manufacturing methods, when a sheet-like base material containing a thermosetting resin as described above is used, the lamination of the wiring boards is performed by curing the thermosetting resin by heating and pressing. It is preferred to do so. According to this, in the laminating step of the wiring substrate, for example, a low-temperature treatment of about 200 ° C. which is a curing temperature of the thermosetting resin is sufficient.

When the sheet-like reinforcing material is polyimide, LC
A sheet obtained by coating a thermosetting resin on a film sheet such as P or aramid may be used.

On the other hand, these wiring boards are not limited to resin boards, but may be ceramic boards.
In this case, a green sheet containing an organic binder, a plasticizer, and a ceramic powder, having at least one through hole and being filled with a conductive paste, is used as the sheet substrate. Can be. This sheet-shaped base material has high heat resistance, good airtightness, and excellent heat conductivity.

The ceramic powder is made of Al ₂ O ₃ , Mg
O, ZrO ₂ , TiO ₂ , BeO, BN, SiO ₂ , Ca
Preferably contains at least one ceramic selected from O and a group consisting of glass, particularly preferably a mixture of Al ₂ O ₃ 50-55 wt% and glass powder 45-50% by weight. The ceramics may be of one type, or two or more types may be used in combination.

As the organic binder, for example, polyvinyl butyrate (PVB), acrylic resin, methyl cellulose resin and the like can be used. As the plasticizer, for example, butyl benzyl phthalate (BBP), dibutyl phthalate (DBP) and the like can be used. Can be used.

[0369] Such a green sheet containing a ceramic or the like can be produced, for example, in the same manner as the above-mentioned method for producing a sheet-like substrate containing the inorganic filler and a thermosetting resin. Note that each processing condition is appropriately determined depending on the type of the constituent material and the like.

For example, when the second metal layer 2403 of the transfer material shown in FIG. 22, that is, the wiring layer is made of silver, silver is a metal having oxidation resistance. And the advantage of facilitating the fabrication process is obtained. On the other hand, FIG. 23 and FIG.
In the case where the second metal layers 2503 and 2603 shown in FIG. 4 are made of copper, the transferred wiring portion becomes a base metal which is easily oxidized, and therefore, a binder removal treatment in a non-oxidizing atmosphere, for example, a nitrogen atmosphere, and A nitrogen firing process is required. Therefore, a structure corresponding to the nitrogen process is also required for the green sheet. Further, vehicles and binders used for printing inductors, capacitors, resistors, and the like are also required to have high thermal decomposition properties in a non-oxidizing atmosphere.

The thickness of the above-mentioned sheet-like substrate is as follows:
Usually, it is in the range of 100 to 250 μm.

As described above, it is preferable that the sheet-like substrate has at least one through hole, and the through hole is filled with a conductive paste. The position of the through-hole is not particularly limited as long as it is formed so as to be in contact with the wiring pattern.
It is preferable to form them at equal intervals of m.

The size of the through-hole is not particularly limited, but is usually in the range of 100 to 200 μm, preferably in the range of 100 to 150 μm.

The method of forming the through holes is appropriately determined depending on the type of the sheet-like base material and the like, and examples thereof include carbon dioxide laser processing, processing using a punching machine, and collective processing using a mold.

The conductive paste is not particularly limited as long as it has conductivity, but usually a resin containing particles of a conductive metal material can be used. As the conductive metal material, for example, copper, silver, gold, silver palladium or the like can be used, and as the resin, an epoxy binder, a phenolic resin, a cellulose resin, an organic binder such as an acrylic resin can be used. .

The content of the conductive metal material in the conductive paste is usually in the range of 80 to 95% by weight. When the sheet-like base material is a ceramic green sheet, a thermoplastic binder is used instead of a thermosetting resin, and glass powder is used as an adhesive.

Next, the method of bonding the transfer material to the sheet-like substrate and the method of peeling the first metal layer from the transfer material adhered to the sheet-like substrate in the above step are not particularly limited. When the sheet-like substrate contains a thermosetting resin other than the ceramic substrate, for example, it can be performed as described below.

First, the transfer material (FIG. 23 (f)) and the sheet-like substrate 2508 are arranged as shown in FIG. 23 (g), and the thermosetting resin in the sheet-like substrate is heated and pressed. By melting and softening, the metal layer 2503 on which the wiring pattern is formed and the printed passive component patterns 2505, 2506, 2507 are buried in the sheet-like base material. In addition, 2
505 is an inductor, 2506 is a capacitor, 2507
Is resistance. However, when transferring a circuit component requiring electrodes on both surfaces of a dielectric layer such as a capacitor, FIG.
As shown in (g), only the wiring pattern 2510 corresponding thereto is previously transferred to the sheet-like base material 25 by transfer or the like.
08 is desirably formed.

Subsequently, the sheet-like substrate on which the transfer material is pressed is treated at the softening temperature or the curing temperature of the thermosetting resin, and in the latter case, the resin is cured.
The transfer material and the sheet-like substrate can be bonded. Further, the adhesion between the second metal layer 2503 and the sheet-like base material 2508 is fixed.

The heating and pressurizing conditions are not particularly limited as long as the thermosetting resin is not completely cured. Usually, the pressure is about 9.8 × 10 ^{5 to} 9.8 × 10 ⁶ Pa (10 to 10 × 10 ⁵ Pa).
100 kg / cm ² ), temperature 70 to 260 ° C., time 30
~ 120 minutes.

Then, after the transfer material (FIG. 23 (f)) and the sheet-like base material 2508 are bonded, for example, the first metal layer 2501 as a carrier layer is pulled and peeled at the peeling layer interface. The first metal layer 2501 can be separated from the second metal layer 2503 and the passive component patterns 2505, 2506, and 2507.

That is, since the adhesive strength of the second metal layer and the component pattern to the first metal layer via the release layer is weaker than the adhesive strength to the sheet-like base material, the first metal layer The adhesive surface between the second metal layer and the passive component pattern is peeled off. As a result, only the component and wiring patterns are transferred to the sheet-like substrate,
Is peeled off (see FIG. 23 (h)).

The curing of the thermosetting resin may be performed after the first metal layer is peeled off from the component wiring pattern.

On the other hand, when the sheet substrate is a green sheet constituting the ceramic substrate, for example, the following method can be used. For example, in the case of FIGS. 22A to 22D, the first metal layer 240
Silver wiring is formed by electrolytic plating as a second metal layer 2403, that is, a wiring layer, using a copper foil for 1. Thereafter, a passive component or the like is formed by screen printing so as to be electrically connected to the silver wiring, thereby forming a transfer component and a wiring pattern. However, since a ceramic substrate involves firing, a semiconductor chip as shown in FIG. 22 (e ') is not mounted. In this configuration, by performing the heating and pressurizing treatment in the same manner as described above, the component wiring pattern can be buried in the green sheet as the sheet-like base material, and the green sheet and the transfer component wiring pattern forming material can be bonded to each other. .

After that, similarly to the above, the material of the transfer material other than the component wiring pattern is removed by peeling the carrier. Then, a restraining alumina green sheet is laminated on the green sheet to which the component wiring pattern has been transferred. Thereafter, a binder removal process in air and a baking process in air are performed to sinter the ceramic, and the transferred second metal layer and component pattern are fixed to the ceramic substrate. This transfer material has an advantage in that since the wiring is formed of silver, the binder can be removed in the air and baked in the air.

On the other hand, FIGS. 23 (a) to 23 (h) and FIG.
In the methods (a) to (h), a first metal layer is formed of copper foil, and a copper wiring is formed as a second metal layer, that is, a wiring layer by a chemical etching method using a photolithography method, for example. Form. Copper wiring can be manufactured at a lower cost than silver wiring manufactured by a plating method, and has excellent migration resistance. Thereafter, a passive component or the like is formed by screen printing so as to be electrically connected to the copper wiring, thereby forming a transfer component wiring pattern.

However, since a ceramic substrate involves firing, the semiconductor chip as shown in FIG. 22 (e ') is not mounted. In the same manner as described above, the heating and pressurizing treatment is performed to bury the wiring pattern in the sheet-shaped base material (green sheet), and the sheet-shaped base material and the transfer component wiring pattern forming material are separated from each other. Can be glued. afterwards,
As described above, the material other than the component wiring pattern is removed by peeling the carrier.

Then, a restraining alumina green sheet is laminated on the green sheet to which the component wiring pattern has been transferred. Thereafter, in an atmosphere in which copper is not oxidized, for example, in a nitrogen atmosphere, a binder removal process and a firing process are performed,
By sintering the ceramic, the transferred second metal layer and component pattern are fixed to the ceramic substrate. Since the wiring of the transfer material is copper, the transfer material itself can be manufactured at a lower cost than in the case of silver wiring, but the firing process needs to be performed in a non-oxidizing atmosphere in consideration of the copper wiring.

Accordingly, as the binder for the green sheet and the binder for the paste constituting the passive component, it is necessary to use, for example, a methacrylic acid-based acrylic binder having good thermal decomposability.

Therefore, the structure of the transfer material can be properly used depending on the sintering conditions of the green sheet constituting the substrate and the ceramic constituting the passive component.

The heating and pressurizing conditions are appropriately determined depending on, for example, the kind of the organic binder contained in the green sheet and the conductive paste.
8 × 10 ^{5 to} 1.96 × 10 ⁷ Pa (10 to 200 kg /
cm ² ), the temperature is 70 to 100 ° C., and the time is 2 to 30 minutes. Therefore, the wiring pattern can be formed without damaging the green sheet.

The conditions for the binder removal treatment are appropriately determined depending on, for example, the type of the binder, the metal constituting the wiring pattern, and the like. Usually, an electric furnace is used at a temperature of 500 to 700.degree. It can be performed by treating for up to 5 hours.

The conditions of the calcination treatment are appropriately determined depending on, for example, the type of the ceramics and the like. Usually, the temperature is 860 to 9 in air or nitrogen using a belt furnace.
50 ° C., time 30-60 minutes.

Further, a second method of manufacturing the wiring board, that is, a method of manufacturing a multilayer circuit board will be described. When a multilayer circuit board as shown in FIG. 25 is manufactured by this method, it can be manufactured by sequentially laminating the single-layer circuit boards manufactured as described above and bonding the layers. Naturally, two or more single-layer circuit boards are stacked,
It is also possible to cure all at once.

For example, in the case of laminating a circuit board having a sheet-like base material containing a thermosetting resin, FIG.
As shown in FIG. 26C, only the component wiring patterns are transferred to the sheet-like base material in a low temperature range where the thermosetting is not performed, as shown in FIGS. 26A to 26C. A single-layer circuit board as described above is obtained. Then, the laminate of the single-layer circuit boards is heated and pressed at the curing temperature of the thermosetting resin, and the thermosetting resin is cured, whereby the circuit boards are bonded and fixed.

If the temperature of the heating and pressurizing condition when transferring the component wiring pattern is intentionally set to 100 ° C. or less, the sheet-like base material can be handled almost like a prepreg even after the transfer. This makes it possible to manufacture a multilayer circuit board by bonding and fixing a plurality of single-layer circuit boards together instead of sequentially laminating and bonding the single-layer circuit boards.

For example, in the case of laminating a ceramic circuit board in which the sheet-like base material contains ceramic, similarly to the above, after transferring only the component wiring pattern to the sheet-like base material, the single-layer ceramic circuit board is transferred. Are laminated, and the heating and pressurizing treatment is performed, whereby the firing of the ceramic and the adhesive fixing between the circuit boards can be performed simultaneously.

Although the number of layers in the multilayer circuit board (FIG. 25) is not particularly limited, it is usually 4 to 8 layers, and may be as many as 12 layers. Further, the overall thickness of the multilayer circuit board is usually 500 to 1000 μm.

The surface of the circuit board constituting the intermediate layer other than the outermost layer of the multilayer circuit board (FIG. 25) has an uneven surface in which a wiring pattern and the like are embedded in the recess, in consideration of the electrical connection structure by the inner via. Instead of a plane, it may be flat. In order to intentionally obtain this structure, a fourth or fifth transfer material may be used. Also, the outermost layer of the multilayer circuit board may be a circuit board having a flat surface, but if the wiring board has a concave portion on the surface and a second metal layer or the like formed on the bottom thereof, FIG. This is preferable because the mounting of a semiconductor chip or the like as shown in FIG.

Hereinafter, more specific examples of the fifth to twelfth embodiments will be described.

(Embodiment 11) FIGS. 22 (a) to 22 (g ′)
FIG. 7 is a cross-sectional view illustrating an example of a schematic process of manufacturing a fourth transfer material.

FIGS. 22 (a) to 22 (e) and FIG. 22 (a)
To (e '), the passive components 2405, 24
22 (e), and a transfer material including a semiconductor chip 2408 as an active component (FIG. 22).
(E ')).

As shown in FIG. 22A, an electrolytic copper foil having a thickness of 35 μm was prepared as the first metal layer 2401.
First, a copper salt raw material is dissolved in an alkaline bath, and this is electrodeposited on a rotating drum so as to have a high current density, thereby producing a metal layer (copper layer). The copper layer was continuously wound to produce an electrolytic copper foil.

Next, as shown in FIG. 22B, a reverse pattern of wiring was formed by using a dry film resist 2404. Thereafter, as shown in FIG. 22C, a metal layer 2403 made of silver and having a thickness of 9 μm is formed on the surface of the first metal layer 2401.
22 by electroplating so that
A two-layer structure as shown in FIG. The surface was roughened so that the center line average roughness (Ra) of the surface was about 4 μm.

Next, portions corresponding to passive components (inductors, capacitors, and resistors) were formed by screen printing. In the present embodiment, the configuration of passive components that can be co-fired is set on the assumption that the passive components are mounted on a ceramic substrate.

As the inductor 2405, Ni—Zn
Using ferrite powder, 5% by weight of acrylic resin (manufactured by Kyoeisha Chemical: degree of polymerization: 100 cps), 15% by weight of terpineol (manufactured by Kanto Kagaku), and 5% by weight of BBP (manufactured by Kanto Kagaku), these three components were used. The mixture was kneaded with a roll to produce a paste.

[0407] As the capacitor 2406, Pb-based perovskite compound _{(PbO-MgO-Nb 2 O} 5 -NiO-WO 3 -TiO 2) with powder, and kneaded with three rolls in a similar configuration, pasty Was prepared. As the resistor 2407, a mixture of ruthenium oxide powder of 5 to 50% by weight and low melting point borosilicate glass of 95 to 50% by weight was used, and a paste-like one was similarly produced.

Using these pastes and a mask having a predetermined shape, the two-layer structure shown in FIG.
As shown in (e), an inductor 2405, a capacitor 2406, and a resistor 2407 were formed by printing. After printing, it was dried at 90 ° C. for 20 minutes.

When transferring, firing and fixing to a ceramic substrate, active components such as semiconductor chips are not formed on the transfer material (see FIG. 22 (e)). However, when transferring to a resin substrate, the semiconductor chip 240
8 etc. may be flip-chip mounted (FIG. 22 (e ')).
reference). After flip-chip mounting, underfill 24
11 with the semiconductor chip 2408 and the wiring pattern 2412
And filling at 150 ° C. to completely cure and integrate.

Using the transfer material shown in FIG.
As shown in (f) to (g), a ceramic circuit board was manufactured.

First, the substrate 240 for transferring the wiring pattern
9 was prepared. This substrate 2409 was produced by preparing a low-temperature fired ceramic green sheet A containing a low-temperature fired ceramic material and an organic binder, providing a via hole in the green sheet, and filling the via hole with a conductive paste 2410. The component composition of the green sheet A is shown below.

(Component Composition of Green Sheet A) Mixture of ceramic powder Al ₂ O ₃ and borosilicate glass (manufactured by Nippon Electric Glass Co., Ltd .: MLS-2000): 88% by weight Carboxylic acid-based acrylic binder (manufactured by Kyoeisha Chemical: Orientation) Cox 8125T): 10% by weight BBP (manufactured by Kanto Chemical Co.): 2% by weight Each of the above components was weighed so as to have the above-mentioned composition, and a toluene solvent was added to the mixture as a viscosity adjusting solvent, and a slurry of the mixture was used. It was added until the viscosity became about 20 Pa · s. Then, a cobblestone of alumina was added thereto, and the mixture was rotated and mixed in a pot for 48 hours at a speed of 500 rpm to prepare a slurry.

Next, a release film having a thickness of 75 μm was prepared.
m PPS film was prepared, and on this PPS film, a film was formed to a gap of about 0.4 mm by the doctor blade method using the slurry, thereby producing a film-formed sheet. The toluene solvent in the sheet was volatilized, the PPS film was removed, and a green sheet A having a thickness of 220 μm was produced. Since the plastic sheet BBP was added to the carboxylic acid-based acrylic binder as the organic binder, the green sheet A had high strength, flexibility, and good thermal decomposition.

[0414] The green sheet A is cut into a predetermined size by utilizing its flexibility, and a punching machine is used to cut the green sheet A at a position having a pitch of 0.2mm to 2mm and a diameter of 0.15mm. (Via holes) were provided. Then, the through holes were filled with a conductive paste for filling via holes by a screen printing method. Through the above steps, the substrate 2409 was manufactured. Conductive paste 241
0 prepares the following materials to have the following composition,
What was kneaded with three rolls was used.

(Conductive paste 2410) Spherical silver particles (manufactured by Mitsui Kinzoku Mining Co., Ltd .: particle size 3 μm): 75% by weight Acrylic resin (manufactured by Kyoeisha Chemical: polymerization degree 100 cps): 5% by weight Terpineol (manufactured by Kanto Chemical Co., Ltd.) ): 15% by weight BBP (manufactured by Kanto Chemical Co.): 5% by weight Next, as shown in FIG.
The transfer material shown in FIG. 22 (e) is placed in contact with both sides of the substrate, and a press temperature of 70 ° C. and a pressure of about 5.
Heat and pressure treatment was performed at 88 × 10 ⁶ Pa (60 kg / cm ² ) for 5 minutes. The capacitor 2406 has a structure in which the dielectric layer is sandwiched between upper and lower electrode surfaces.
The electrode pattern 2411 may be formed on the 409 in advance by transfer or the like. Such a method is possible only when the transfer material of the present invention in which a capacitor is formed by printing is used, and it is difficult with a conventional method of printing a dielectric layer on a substrate green sheet.

[0416] By this heating and pressing treatment, the substrate 240
9 melts and softens, and the wiring layer 2403 of the second metal layer and the circuit components 2405, 2406, 2
407 was buried in the substrate 2409.

After cooling the laminate of the substrate 2409 and the transfer material, the metal layer 2401, which is a carrier of the transfer material, is peeled from the laminate to form a wiring layer 24 on both surfaces.
03 and the circuit board sheet on which the circuit components 2405, 2406, and 2407 were transferred.

Then, the circuit board sheet was sandwiched between green sheets made of an alumina inorganic filler which was not sintered at the firing temperature, and was fixed by removing the binder and firing in the air atmosphere. First, in order to remove the organic binder in the circuit board (FIG. 22 (g)), an electric furnace was used at a heating rate of 25 ° C./hour at 500 ° C.
C. and treated at a temperature of 500.degree. C. for 2 hours. Then, using a belt furnace, the wiring substrate subjected to the binder removal treatment was baked by treating it at 900 ° C. for 20 minutes in the air. The condition is that the temperature rise is 20 minutes and the temperature fall is 20 minutes.
Minutes and in / out total 60 minutes. After firing, the alumina layer could be easily removed.

[0419] After the firing, the wiring board had a flat mounting surface. A gold plating layer may be formed on the wiring layer 2403 of this circuit board (FIG. 22G).

[0420] No warping, cracking, or distortion occurred in this circuit board. This is also due to the sintering method that does not shrink in the plane direction. By adopting this method, simultaneous firing of the copper foil wiring and the ceramic substrate can be realized. The mounting positions of the circuit components (inductor, capacitor, resistor) were also accurate, and a circuit board as strictly designed could be formed by batch transfer.

Further, even when a capacitor high-temperature load reliability test (125 ° C., 50 V, 1000 hours) was performed, the dielectric layer of the capacitor 2406 did not show any deterioration in insulation resistance.
0 was able to secure more than ^{6 Ω} of insulation resistance. The dielectric constant of the dielectric layer was 5000 and the dielectric constant of the substrate layer was 8.1.
The inductance of the inductor 2405 was able to secure 0.5 μH. In addition, the resistance value of the resistor 2407 could be arbitrarily set in a range of 100Ω to 1MΩ.

As described above, when the transfer material of the present invention is used,
Circuit formation including passive components such as inductors, capacitors, and resistors could be easily realized.

In addition, the advantage of this embodiment is that the baking process that does not shrink in the plane direction and the process of transferring a dense conductive pattern by plating can provide a wiring having extremely high conductivity, By using silver, binder removal and firing can be performed in the atmosphere. In particular, since the latter process can be adopted, each composition of the passive components such as the substrate composition, the inductor, the capacitor, and the resistor can be widely selected.

The case where the transfer material shown in FIG. 22 (e ') is transferred, mounted and fixed to a resin-based substrate is shown in FIG.
As shown in (f ′) and (g ′), it has been confirmed that batch transfer and mounting can be performed well as in the case of the ceramic green sheet.

(Embodiment 12) FIGS. 23 (a) to 23 (h)
It is sectional drawing which shows an example of the outline of the manufacturing process of the wiring board using a 5th transfer material.

As shown in FIGS. 23A to 23F,
A fifth transfer material was produced.

First, as shown in FIG.
As the metal layer 2501, an electrolytic copper foil having a thickness of 35 μm was prepared. Specifically, a copper salt raw material is dissolved in an alkaline bath, and this is electrodeposited on a rotating drum so as to have a high current density to form a metal layer (copper layer), and the copper layer is continuously wound. Thus, an electrolytic copper foil was produced.

Next, a thin plating layer of a nickel-phosphorus alloy is formed on the surface of the first metal layer
2 was formed. Metal layer 250 for forming wiring pattern
As No. 3, a second metal layer 2503 was formed by laminating the same electrolytic copper foil as that of the first metal layer 2501 to a thickness of 9 μm by electrolytic plating. This allows
A laminate having a three-layer structure was produced (see FIG. 23A).

The center line average roughness (Ra) of this surface is 4
The surface was roughened to a thickness of about μm. The roughening treatment was performed by depositing fine copper particles on the electrolytic copper foil.

Next, as shown in FIG. 23 (b), a dry film resist (DFR) 2504 is attached to the laminate by photolithography, and as shown in FIG. And development. Then, as shown in FIG. 23 (d), the second metal layer 2503 of the laminate is immersed in a chemical etching method (basic system obtained by adding ammonium ions to a cupric chloride aqueous solution). To form an arbitrary wiring pattern. According to this etchant, the second metal layer 2
Only 503 is etched, and the nickel-phosphorus alloy layer which is a peeling layer is not etched.

Thereafter, as shown in FIG.
The remaining dry film resist was removed with a release agent to obtain a transfer material.

Next, a portion corresponding to a passive component was formed by screen printing. In this embodiment, assuming that the inductor is mounted on a ceramic substrate, an inductor that can be co-fired,
A capacitor and a resistor were used.

As the inductor 2505, Ni-Z
Using n ferrite powder, 5% by weight of an acrylic resin (manufactured by Kyoeisha Chemical Co., Ltd .: degree of polymerization: 100 cps), 15% by weight of terpineol (manufactured by Kanto Kagaku), and 5% by weight of BBP (manufactured by Kanto Kagaku), these components were used in 3 parts The mixture was kneaded with this roll to produce a paste.

As the capacitor 2506, a Pb-based perovskite compound (PbO-MgO-Nb ₂ O ₅ -NiO-WO ₃ -TiO ₂ ) powder was kneaded with three rolls in the same configuration, and paste was formed. Was prepared.

As the resistor 2507, ruthenium oxide powder of 5 to 50 wt% and low melting point borosilicate glass of 95 to 50 wt.
A paste-like product was prepared in the same manner by using a mixture of wt%.

Using these pastes and a mask of a predetermined shape, the transfer material shown in FIG.
As shown in (f), the inductor 2505, the capacitor 2506, and the resistor 2507 were formed by printing. Using this transfer material, a ceramic circuit board was manufactured as shown in FIGS. 23 (g) to 23 (h).

[0437] First, a substrate 2508 was prepared. This substrate 2508 prepares a low-temperature fired ceramic green sheet B containing a low-temperature fired ceramic material and an organic binder,
A via hole was provided in the via hole, and the via hole was filled with a conductive paste 2509 to produce the via hole. less than,
2 shows the component composition of the green sheet B.

(Component Composition of Green Sheet B) Mixture of ceramic powder Al ₂ O ₃ and lead borosilicate glass (manufactured by Nippon Electric Glass Co., Ltd .: MLS-1000): 88% by weight Methacrylic acrylic binder (manufactured by Kyoeisha Chemical: Oricox 7025): 10% by weight BBP (manufactured by Kanto Chemical Co.): 2% by weight Each of the above components was weighed so as to have the above composition, and a toluene solvent was added to the mixture as a viscosity adjusting solvent, and the mixture was mixed with a toluene solvent. It was added until the slurry viscosity became about 20 Pa · s. Then, a cobblestone of alumina was added thereto, and the mixture was rotated and mixed in a pot for 48 hours at a speed of 500 rpm to prepare a slurry.

Next, a release film having a thickness of 75 μm was prepared.
m PPS film was prepared, and a film was formed on this PPS film using the slurry by a doctor blade method so as to have a gap of about 0.4 mm. Volatilize the toluene solvent in the sheet,
The PPS film was removed to produce a green sheet B having a thickness of 220 μm. The green sheet B had flexibility and good thermal decomposability because the plasticizer BBP was added to the methacrylic acrylic binder as the organic binder.

The green sheet B is cut into a predetermined size by utilizing its flexibility, and a punching machine is used to cut the green sheet B at a position having a pitch of 0.2 mm to 2 mm and a pitch of 0.15 mm. (Via holes) were provided. Then, the through-hole was filled with a conductive paste 2509 for filling a via hole by a screen printing method.
Through the above steps, the substrate 2508 was manufactured. The conductive paste 2509 used was prepared from the following materials so as to have the following composition and kneaded with a three-roll mill.

(Conductive paste 2509) Spherical silver particles (Mitsui Metal Mining Co., Ltd .: particle size 3 μm): 75% by weight Acrylic resin (Kyoeisha Chemical: degree of polymerization 100 cps): 5% by weight Terpineol (Kanto Chemical Co., Ltd.) ): 15% by weight BBP (manufactured by Kanto Chemical Co.): 5% by weight Next, the transfer material (FIG. 23 (f)) prepared as described above is arranged on both sides of the substrate 2508 so as to be in contact with it, and hot pressing is performed. Using a press temperature of 70 ° C. and a pressure of about 5.88 × 10
Heat and pressure treatment was performed at ⁶ Pa (60 kg / cm ² ) for 5 minutes. Note that the electrode pattern 2510 may be formed in advance on the substrate 2508 by transfer or the like so that the capacitor 2506 has a structure in which the dielectric is sandwiched between the upper and lower electrode surfaces. Such a method is possible only when the transfer material of the present invention in which a capacitor is formed by printing is used, and it has been difficult with a conventional method of printing a dielectric layer directly on a substrate green sheet.

[0442] By this heating and pressing treatment, the substrate 250
8 melts and softens, the second metal layer 2503 as a wiring pattern, the inductor 2505, the capacitor 2506, and the resistor 2507 as circuit components
Were buried in the substrate 2508.

After the laminate of the transfer material and the substrate 2508 is cooled, the first metal layer 2501, which is a carrier of the transfer material, and the release layer 2502 are separated from the laminate to form a laminate on both surfaces. A circuit board sheet to which the second metal layer 2503 as a wiring pattern and the inductors 2505, capacitors 2506 and resistors 2507 as circuit components were transferred was obtained.

Then, the circuit board sheet is sandwiched between green sheets made only of alumina inorganic filler which is not sintered at the firing temperature of the board, and laminated. The binder is fixed in a nitrogen atmosphere by removing the binder and firing. Was.

First, in order to remove the organic binder in the circuit board sheet (FIG. 23H), an electric furnace was used at 25 ° C.
Heating to 600 ° C at a heating rate of
Treated at 00 ° C. for 2 hours. Then, using a belt furnace, the wiring substrate subjected to the binder removal treatment is heated at 900 ° C. for 2 hours in nitrogen.
Baking was performed by treating for 0 minutes. This condition
The temperature was raised for 20 minutes, the temperature was lowered for 20 minutes, and the total in-out time was 60 minutes. After firing, the alumina layer could be easily removed.

A flat mounting surface was formed on this wiring board (FIG. 23 (h)). This circuit board (FIG. 23)
A gold plating layer may be formed on the wiring layer 503 of (h)).

[0447] No warping, cracking, or distortion occurred on this circuit board. This is because the ceramic substrate shrinks only in the thickness direction because a sintering method that does not shrink in the plane direction is employed. As a result, simultaneous firing of the copper foil wiring and the ceramic substrate was realized. The mounting position of each circuit component was also accurate, and a circuit board as strictly designed could be formed by batch transfer.

Further, even when a capacitor high-temperature load reliability test (125 ° C., 50 V, 1000 hours) was performed, the dielectric layer of the capacitor 2506 showed no deterioration in insulation resistance.
0 was able to secure more than ^{6 Ω} of insulation resistance. The dielectric constant of the dielectric layer was 5000 and the dielectric constant of the substrate layer was 8.1.
The inductance of the inductor 2505 is 0.5 μH
Was able to secure. Further, as for the resistance value of the resistor, an arbitrary value of 100Ω to 1MΩ could be realized.

As described above, when the transfer material of the present invention is used,
A circuit including an inductor, a capacitor, a resistor, and the like could be easily formed.

(Embodiment 13) FIGS. 24A to 24H show
It is sectional drawing which shows an example of the outline of the manufacturing process of the wiring board using the said 6th transfer material.

First, as shown in FIGS. 24A to 24F, a sixth transfer material was manufactured.

First, as the first metal layer 2601, an electrolytic copper foil having a thickness of 35 μm was prepared. First, a copper salt raw material is dissolved in an alkaline bath, and this is electrodeposited on a rotating drum so as to have a high current density to form a metal layer (copper layer). A foil was made.

Next, a thin adhesive composed of an organic layer is applied on the surface of the first metal layer 2601,
02 is formed. Then, as the second metal layer 2603 for forming the wiring pattern, the same electrolytic copper foil as that of the first metal layer 2601 was laminated by electroplating so as to have a thickness of 9 μm. Thus, a laminate having a three-layer structure as shown in FIG.

The center line average roughness (Ra) of this surface is 4
The surface was roughened to a thickness of about μm. The roughening treatment was performed by depositing fine copper particles on the electrolytic copper foil.

Next, as shown in FIG. 24B, a dry film resist (DFR) 2604 was affixed to the laminate by photolithography. And FIG.
As shown in (c), exposure and development of the wiring pattern portion are performed. Thereafter, as shown in FIG. 24D, not only the second metal layer 2602 but also the surface portion of the first metal layer 2601 in the laminate is subjected to a chemical etching method (immersion in an aqueous ferric chloride solution). ) To form an arbitrary wiring pattern.

Thereafter, the DFR 2604 was removed with a release agent to obtain a three-layer structure as shown in FIG. First
Since the first metal layer and the second metal layer are made of the same copper, the wiring layer having a convex portion is formed not only on the second metal layer but also on the first metal layer by one chemical etching. Can be formed. This structure is characterized in that it is processed into a wiring pattern up to the first metal layer as a carrier layer. In this embodiment, an organic layer is used as the release layer. However, for example, a transfer material having the same function can be obtained by using a nickel plating layer or the like.

In the three-layer structure, the first metal layer 26
01 and the second metal layer 2603 for forming a wiring pattern are excellent in chemical resistance even though the adhesive force itself is weak, and even if the entire three-layer structure is etched,
A wiring pattern could be formed without any problem without delamination between layers. On the other hand, the adhesion strength between the first metal layer 2601 and the second metal layer 2603 via the release layer 2602 is 40
N / m, and was excellent in peelability.

Next, circuit components were formed by screen printing. In this embodiment, only passive components such as inductors, capacitors, and resistors that can be simultaneously cured are formed on the assumption that they are mounted on a resin-based substrate.

As the inductor 2605, Ni-Z
n ferrite powder, 10% by weight of liquid epoxy resin (manufactured by Nippon Lec, EF-450), and 0.3% by weight of coupling agent (manufactured by Ajinomoto Co., titanate: 46B),
These components were kneaded using a kneader that revolves and rotates at high speed to produce a paste.

[0460] A paste having the same constitution using magnetic alloy powder and sendust powder as filler was also prepared. The capacitor 2606, using a Pb-based perovskite compound _{(PbO-MgO-Nb 2 O} 5 -NiO-WO 3 -TiO 2) powder were kneaded with a kneader at the same configuration, making a paste-like did. As the resistor 2607, a paste-like resistor having the same configuration with a different carbon content was produced.

Using these pastes and a mask of a predetermined shape, the three-layer structure shown in FIG.
As shown in FIG. 4 (f), the sixth transfer material was formed by printing and forming circuit components. After printing, 90 ° C,
It was allowed to dry for 20 minutes.

Note that the semiconductor chip 26 is further placed on the wiring substrate after the transfer using the present transfer material.
08 is assumed to be mounted, and the wiring 2613 has been formed.

Thereafter, as shown in FIGS. 24 (g) to (h), a printed circuit board was manufactured by the following method.

First, a substrate 2610 was prepared. The substrate 2610 was manufactured by preparing a sheet-shaped base material made of a composite material, providing a via hole in the base material, and filling the via hole with a conductive paste 2611.
The component composition of the sheet-like substrate 2610 is shown below.

(Component composition of sheet-like substrate 2610) Al ₂ O ₃ (manufactured by Showa Denko KK, AS-40: particle size: 12 μm): 90% by weight Liquid epoxy resin (manufactured by Nippon Wrec, EF-450): 5% by weight Carbon black (manufactured by Toyo Carbon Co., Ltd.): 0.2% by weight Coupling agent (manufactured by Ajinomoto Co., titanate: 46B): 0.3% by weight The above components were weighed so as to have the above composition. To these mixtures, a methyl ethyl ketone solvent was added as a solvent for adjusting the viscosity until the slurry viscosity of the mixture became about 20 Pa · s. Then, a cobblestone of alumina was added thereto, and the mixture was rotated and mixed in a pot for 48 hours at a speed of 500 rpm to prepare a slurry.

Next, a release film having a thickness of 75 μm was prepared.
m PET film was prepared, and a film was formed on the PET film to a gap of about 0.7 mm using the slurry by the doctor blade method. Then, this film forming sheet is heated at a temperature of 100 ° C.
By leaving it for a while, the methyl ethyl ketone solvent in the sheet was volatilized, the PET film was removed, and a sheet substrate 601 having a thickness of 350 μm was produced.
Since the removal of the solvent was performed at a temperature of 100 ° C., the epoxy resin remained in an uncured state, and the sheet-shaped substrate had flexibility.

This sheet-shaped substrate is cut into a predetermined size by utilizing its flexibility, and a carbon dioxide gas laser is used to cut a sheet having a diameter of 0 mm at a position having a pitch of 0.2 mm to 2 mm at equal intervals. A through hole (via hole) of .15 mm was provided. Then, a conductive paste 2611 for filling a via hole was filled in the through hole by a screen printing method.
Through the above steps, the substrate 2610 was manufactured. The conductive paste 2611 was prepared by mixing the following materials to have the following composition and kneading them with a three-roll mill.

(Conductive paste 2611) Spherical copper particles (manufactured by Mitsui Mining & Smelting Co., Ltd .: particle size: 2 μm): 85% by weight Bisphenol A type epoxy resin (manufactured by Yuka Shell Epoxy, Epicoat 828): 3% by weight Glucidyl ester-based epoxy resin (manufactured by Toto Kasei Co., Ltd., YD-171): 9% by weight Amine adduct curing agent (manufactured by Ajinomoto Co., MY-24): 3% by weight Next, as shown in FIG. The substrate 2610
24, transfer material (FIG. 24)
(F)) is arranged so that the component pattern side is in contact, and using a hot press, a press temperature of 120 ° C. and a pressure of about 9.8 × 1
Heating and pressurizing treatment was performed at 0 ⁵ Pa (10 kg / cm ² ) for 5 minutes.

In the case where the capacitor 2606 has a structure in which the dielectric layer is sandwiched between the upper and lower electrode surfaces, the substrate 2
The electrode pattern 2612 may be transferred and formed on 610 in advance. Such a method is only possible when the transfer material of the present invention in which the capacitor is printed is used,
The conventional method of printing a dielectric layer on a composite sheet using ceramic as a filler has been difficult.

As a result of the heating and pressurizing treatment, the epoxy resin in the substrate 2610 (the epoxy resin in the sheet-like base material and the conductive paste 2611) is melted and softened.
As shown in (h), the circuit component pattern (inductor 2
605, capacitor 2606, and resistor 2607)
And the second metal layer 2603 as a wiring pattern
It was buried in the substrate 2610. Then, the heating temperature was further increased, and the epoxy resin was cured by treating at a temperature of 175 ° C. for 60 minutes. Then, the wiring 26
On 13, a semiconductor chip 2608 was flip-chip mounted.

As a result, the sheet-like base material and all circuit component patterns are firmly adhered to each other, and the conductive paste 2611 and each circuit component pattern are electrically connected (inner via connection) and firmly. Glued.

After that, the first metal layer 2 serving as a carrier layer
By separating the release layer 601 and the release layer 2602, circuit component patterns (inductor 2605, capacitor 2606, and resistor 2607) and wiring patterns (second metal layer 260) are formed on both surfaces as shown in FIG.
A wiring board having the condition 3) was obtained. In this wiring board, a concave portion corresponding to the depth at which the first metal layer 2603 was etched in the transfer material was formed, and all wiring patterns and circuit component patterns were formed at the bottom of the concave portion.

By using this transfer material, when the transfer of the second metal layer 2603 and the like to the substrate 2610 is performed, the first metal layer 2601 and the second metal layer 2603 are used.
The second metal layer 2603 and the circuit component pattern (the inductor 2605, the capacitor 2606, and the resistor 2)
607) could be transferred to the substrate.

In this embodiment, since the first metal layer 2601 as a carrier is formed of a copper foil having a thickness of 35 μm, even if the base material of the substrate 2610 is deformed during transfer, the carrier layer is deformed. It was able to withstand the stress. On the other hand, in the transfer material of the present example, the base portion of the substrate 2610 easily flows into the concave portion of the first metal layer 2601 which is a carrier layer at the time of pressure bonding because the wiring portion forms the convex portion. , It is easy to suppress the lateral deformation stress that tries to distort. Therefore, the pattern distortion in this example was only 0.08%, which was equivalent to the amount of shrinkage on curing of the base material.

In this example, the release layer made of an organic layer was used.
Even when a plating layer such as an i-plating layer was used as a peeling layer, the same wiring pattern transfer formation could be realized.

The semiconductor chip 2 is provided on the wiring 2613.
The flip-chip mounting of 608 was easily performed by aligning the bumps with the wiring 2613 formed in the recess.

The mounting position of each circuit component is also accurate.
Circuit board of the exact design
I was able to. The wiring board of this embodiment is a semiconductor chip.
The bonding between the bump 2608 and the wiring 2613 is good.
As a bypass capacitor for the semiconductor chip 2608
Capacitor 2606 mounted to function well
Worked. In addition, capacitor high temperature load reliability test (12
5 ° C, 50V, 1000 hours)
The dielectric layer 2606 showed no deterioration in insulation resistance, ⁶Ω
The above insulation resistance was secured.

The dielectric constant of the dielectric layer was 200, and the dielectric constant of the substrate layer was 8.1. The inductance of the inductor 2605 is 0.5 regardless of ferrite or magnetic alloy.
A sufficient value of μH or more could be secured. The resistance value of the resistor 2607 ranges from 100Ω to 1 MΩ.
Any value of can be realized.

As described above, when the transfer material of the present invention is used,
Circuit formation including active components such as wiring patterns and semiconductor chips and passive components such as inductors, capacitors, and resistors could be easily realized.

Example 14 Using the fourth to sixth transfer materials of the present invention and a substrate made of a composite material manufactured in the same manner as in Example 13, the multilayer wiring board shown in FIG. Produced. FIG. 26 is a cross-sectional view schematically showing a manufacturing process of each layer of the multilayer wiring board.

In FIG. 26, 2800A, 2800
B and 2800C indicate transfer materials, respectively. 28
00A is a transfer material on which a resistor 2803 is mainly formed by printing. The 2800B is mainly composed of the capacitor 2804
Is a transfer material on which a dielectric layer to be printed is formed. 2800
C is formed by printing a magnetic layer to be mainly the inductor 2805.

In the present embodiment, FIGS.
As shown in (c), an inner via in the substrate sheet 2806 was filled with the conductive paste 2807 in advance. The detailed configuration is the same as that of the thirteenth embodiment, and thus will not be described.

The wiring layer 2808 formed on the surface of the uppermost layer of the multilayer wiring board and one electrode 2809 of the capacitor 2804 are previously transferred to the substrate sheet 28 by transfer or the like.
06. The transfer material used for this transfer preferably has the same structure as the transfer material of the present invention.

Conventionally, when passive components formed by printing are incorporated in a multilayer substrate, a method of printing and forming individual passive components on a substrate green sheet has been adopted. However,
According to this method, a step having a thickness of several tens of μm is generated on the substrate surface. Therefore, when trying to continue the lamination of the substrate for a number of layers for multi-layering, the outer peripheral end of the capacitor or the like is deformed so as to be crushed by the pressing force at the time of pressure firing, and the insulation property is easily lowered, Frequent short-circuiting of the capacitor and the like occurred.

According to this embodiment, as shown in FIG. 26 (b), the electrode 2802 formed on the transfer material 2800B and the dielectric material are aligned with the electrode pattern 2809 formed on the substrate sheet 2806 in advance. The layer 2804 is pressed. At this time, the substrate sheet 2806 having excellent fluidity is provided.
Since the electrode 2802 and the dielectric layer 2804 are buried therein, a single-layer wiring board is formed without any step on the surface as shown in FIG. 26 (b ′).

Similarly, transfer materials 2800A and 2800A
When transfer is performed using C, no level difference occurs, and FIG.
As shown in (a ′) and (c ′), flat surfaces are respectively formed.

Finally, the single-layer wiring board shown in FIGS. 26 (a ') to (c') and the wiring board having the wiring pattern transferred and formed on both sides as shown in FIG. 26 (d ') are laminated. Then, the sheet is collectively cured by the heat and pressure treatment as described above. As a result, each layer in which circuit components such as an inductor, a capacitor, and a resistor are built up is laminated, and FIG.
A multilayer circuit board as shown in FIG. 5 can be formed.
According to the present embodiment, since each layer has a flat surface with no steps, the lamination process can be easily performed.

As described above, the fourth to sixth aspects of the present invention
The transfer material of, in addition to the fine wiring pattern, inductor,
Since circuit component patterns such as a capacitor and a resistor can be formed by printing and transferred collectively, these can be easily and accurately mounted on a substrate. Furthermore, since the wiring pattern and the component pattern are mounted by transfer, the wiring pattern and the component pattern are embedded in the surface of each layer without generating a step. This makes it possible to easily perform the subsequent laminating step without disconnection of the wiring or collapse of the pattern shape.

In the fifth to twelfth embodiments and the eleventh to fourteenth embodiments, the transfer material in which all of the inductor, the capacitor, and the resistor are formed is exemplified.
Not all of these components need be formed.

[0490]

As described above, according to the present invention, it is possible to provide a transfer material which can transfer a fine wiring pattern and a component pattern reliably and easily at a low temperature without a pattern shift. By using this, it is possible to realize a wiring board having fine wiring patterns and component patterns and advantageous for flip-chip mounting of semiconductors.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a schematic configuration of a first embodiment (first transfer material) of a transfer pattern forming material (hereinafter, referred to as a transfer material) according to the present invention.

FIG. 2 is a cross-sectional view schematically illustrating a configuration of a second embodiment (second transfer material) of the transfer material according to the present invention.

FIG. 3 is a cross-sectional view schematically illustrating a configuration of a third embodiment (third transfer material) of a transfer material according to the present invention.

FIG. 4A to FIG. 4F are cross-sectional views schematically showing a manufacturing process of the first transfer material.

FIGS. 5A to 5E are cross-sectional views schematically showing a manufacturing process of the second transfer material.

FIGS. 6A to 6E are cross-sectional views schematically showing a manufacturing process of the third transfer material.

FIGS. 7A to 7C are cross-sectional views schematically illustrating an example of a manufacturing process of a composite wiring board using the transfer material of the present invention.

FIG. 8 is a cross-sectional view schematically showing the configuration of a ceramic wiring board manufactured using the transfer material of the present invention.

9 is a cross-sectional view schematically showing a configuration in which a semiconductor chip is flip-chip mounted on the ceramic wiring board of FIG. 8;

10A to 10J are cross-sectional views schematically illustrating an example of a manufacturing process of a multilayer wiring board using the transfer material of the present invention.

FIG. 11 is a cross-sectional view illustrating a schematic configuration of an example of a multilayer wiring board manufactured using the transfer material of the present invention.

FIG. 12 is a cross-sectional view schematically illustrating the configuration of another example of a multilayer wiring board manufactured using the transfer material of the present invention.

FIG. 13 is a cross-sectional view showing a schematic configuration of still another example of a multilayer wiring board manufactured using the transfer material of the present invention.

FIG. 14 is a cross-sectional view showing a schematic configuration of still another example of a multilayer wiring board manufactured using the transfer material of the present invention.

FIG. 15 is a cross-sectional view showing a schematic configuration of still another example of a multilayer wiring board manufactured using the transfer material of the present invention.

16A to 16C are cross-sectional views schematically illustrating an example of a manufacturing process of a multilayer wiring board using the transfer material of the present invention.

FIGS. 17A to 17C are cross-sectional views schematically illustrating another example of a manufacturing process of a multilayer wiring board using the transfer material of the present invention.

FIGS. 18A to 18E are cross-sectional views schematically illustrating still another example of a manufacturing process of a multilayer wiring board using the transfer material of the present invention.

FIGS. 19A and 19B are diagrams illustrating a transfer component wiring pattern forming material (fourth embodiment) according to a fifth embodiment of the present invention;
Sectional view showing the schematic configuration of the transfer material

FIG. 20 is a sectional view schematically showing the configuration of a transfer component wiring pattern forming material (a fifth transfer material) according to a sixth embodiment of the present invention.

FIG. 21 is a sectional view schematically showing the configuration of a transfer component wiring pattern forming material (sixth transfer material) according to a seventh embodiment of the present invention.

FIGS. 22A to 22G are cross-sectional views schematically showing a manufacturing process of a multilayer circuit board using the fourth transfer material.

23 (a) to 23 (h) are cross-sectional views schematically showing a process of manufacturing a circuit board using the fifth transfer material.

FIGS. 24A to 24H are cross-sectional views schematically showing a process of manufacturing a circuit board using the sixth transfer material. FIGS.

FIG. 25 is a cross-sectional view of a multilayer circuit board manufactured using the fourth to sixth transfer materials.

26 (a) to (c) schematically show a method of forming a single-layer wiring board constituting each layer of the multilayer circuit board shown in FIG. 25 using the sixth transfer material of the present invention. (A ′) to (c ′) are cross-sectional views of each layer of the multilayer circuit board formed by each of the methods (a) to (c), and (d ′) is a cross-sectional view of FIG. Sectional view of the lowermost wiring board of the multilayer circuit board

[Explanation of symbols] [Explanation of symbols]

101, 201, 301, 2101, 2201, 230
1 First metal layer 102, 202, 302, 2202, 2302 Release layer 103, 203, 303, 2102, 2203, 230
3 Second metal layer 105 Third metal layer 2103, 2204, 2304 Inductor 2104, 2205, 2305 Capacitor 2105, 2206, 2306 Resistance 2106 Semiconductor chip

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05K 1/16 H05K 1/16 A 5G323 1/18 1/18 L 3/40 3/40 K 3/46 3/46 NGT Q (72) Inventor Koichi Hirano 1006 Odakadoma, Kadoma City, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. 72) Inventor Yasuyuki Matsuoka 1006 Kazuma Kadoma, Osaka Pref.Matsushita Electric Industrial Co., Ltd. 1006 Kadoma Kadoma Matsushita Electric Industrial Co., Ltd. F-term (reference) 4E351 AA01 AA07 BB01 BB03 BB05 BB09 BB24 BB26 BB27 BB29 BB33 BB35 CC17 DD01 DD04 DD05 DD06 DD28 GG20 5E317 AA24 BB01 BB04 BB11 BB12 BB13 BB14 BB15 CC02 CC25 CC52 CD25 CD27 CD32 CD34 GG14 GG16 5E336 AA04 BB03 BB15 BB18 CC32 CC34 CC44 CC58 EE05 GG09 5E343 AA02 AA12 BB23 BB15 ABB23 BB15 ABB23 BB15 BB15 BB15 ABB23 BB15 BB15 BB15 AA15 AA22 AA43 BB01 BB20 CC08 CC17 CC31 CC32 CC37 CC38 CC39 DD02 DD31 DD33 EE06 EE07 EE15 EE43 FF01 FF18 FF35 FF45 GG01 GG17 GG22 GG28 HH26 HH33 5G323 AA03

Claims (123)

[Claims] A first metal layer as a carrier; a second metal layer as a wiring pattern; and a first metal layer interposed between the first metal layer and the second metal layer. And at least three layers, a release layer for bonding the layer and the second metal layer in a releasable state, and a convex portion having a shape corresponding to the wiring pattern is formed on a surface layer of the first metal layer. The transfer material, wherein the release layer and the second metal layer are formed on the convex region. 2. The transfer according to claim 1, wherein each of the first metal layer and the second metal layer includes at least one metal selected from the group consisting of copper, aluminum, silver, and nickel. Wood. 3. The transfer material according to claim 1, wherein the first metal layer and the second metal layer include metals of the same component. 4. The transfer material according to claim 2, wherein the first metal layer and the second metal layer are made of copper foil. 5. The transfer material according to claim 4, wherein the release layer is made of a material that is etched with a copper etchant. 6. The transfer material according to claim 1, wherein the height of the protrusion in the first metal layer is in a range of 1 to 12 μm. 7. The transfer material according to claim 1, wherein the release layer has a thickness of 1 μm or less. 8. The transfer material according to claim 1, wherein the release layer is an organic layer or a metal plating layer. 9. The transfer material according to claim 8, wherein the release layer is an Au plating layer. 10. The transfer material according to claim 1, wherein an adhesive strength of the first metal layer and the second metal layer via a release layer is 50 N / m or less. 11. The first metal layer has a thickness of 4 to 40.
μm, and the thickness of the second metal layer is 1 to 35 μm.
The transfer material according to any one of claims 1 to 10, which has a range of m. 12. The transfer material according to claim 1, further comprising a third metal layer on the second metal layer. 13. The method according to claim 13, wherein the thickness of the third metal layer is 2 to 30.
13. The transfer material according to claim 12, which is in a range of μm. 14. The transfer material according to claim 12, wherein the first to third metal layers include metals of the same component. 15. The method according to claim 1, wherein the third metal layer is gold.
14. The transfer material according to 2 or 13. 16. The semiconductor device according to claim 16, further comprising a fourth metal layer on the third metal layer, wherein the fourth metal layer is formed on the first to third metal layers.
The transfer material according to any one of claims 12 to 15, wherein the transfer material is composed of a metal component that is chemically stable to an etching solution that corrodes the metal layer. 17. The fourth metal layer is made of at least one metal selected from gold, silver, nickel, tin, bismuth, lead and copper, and has a thickness of 1 to 10 μm. The transfer material according to 1. 18. The transfer material according to claim 1, further comprising a circuit component formed by a printing method so as to be electrically connected to said second metal layer. 19. The transfer material according to claim 18, wherein the circuit component includes at least one component selected from an inductor, a capacitor, and a resistor. 20. The transfer material according to claim 18, wherein the circuit component is made of a material containing an inorganic filler and a resin composition. 21. The transfer material according to claim 18, wherein the circuit component is made of a material containing an inorganic filler, an organic binder, and a plasticizer. 22. At least two layers, a first metal layer as a carrier, and a second metal layer as a wiring pattern, wherein the second metal layer is electrically connected to the second metal layer on the first metal layer. A transfer material comprising a circuit component formed by a printing method so as to be electrically connected. 23. A release layer provided between the first metal layer and the second metal layer, the release layer bonding the first metal layer and the second metal layer in a releasable manner. The transfer material according to 1. 24. The transfer material according to claim 23, wherein the thickness of the release layer is 1 μm or less. 25. The transfer material according to claim 23, wherein the release layer comprises an organic layer or a metal plating layer. 26. The transfer material according to claim 25, wherein the release layer is an Au plating layer. 27. The bonding strength between the first metal layer and the second metal layer by the release layer is 10 N / m or more and 50 N / m or more.
The transfer material according to any one of claims 23 to 26, wherein the transfer material has a range of m or less. 28. The transfer material according to claim 22, wherein the circuit component includes at least one component selected from an inductor, a capacitor, and a resistor. 29. The circuit component according to claim 22, wherein the circuit component is made of a material containing an inorganic filler and a resin composition.
The transfer material according to any one of the above. 30. The transfer material according to claim 22, wherein the circuit component is made of a material containing an inorganic filler, an organic binder, and a plasticizer. 31. The thickness of the first metal layer is 4 to 10
The transfer material according to any one of claims 22 to 30, wherein the transfer material is in a range of 0 µm, and the thickness of the second metal layer and the circuit component is in a range of 1 to 35 µm. 32. An uneven portion is formed on a surface portion of the first metal layer, the convex portion corresponds to a wiring pattern of the second metal layer, and the first metal layer is formed on the convex portion. The transfer material according to any one of claims 22 to 31, wherein an upper layer is formed above the layer. 33. The transfer material according to claim 32, wherein in the first metal layer, the height of the projection is in a range of 1 to 12 μm. 34. The semiconductor device according to claim 22, wherein each of the first metal layer and the second metal layer includes at least one metal selected from the group consisting of copper, aluminum, silver, and nickel. The transfer material described in Crab. 35. The transfer material according to claim 22, wherein the first metal layer and the second metal layer include metals of the same component. 36. A release layer is formed on the first metal layer, a second metal layer is formed on the release layer, and the second metal layer, the release layer,
And etching the surface layer portion of the first metal layer to form the second metal layer and the release layer in a wiring pattern shape, and that the protrusions are formed on the surface layer portion of the first metal layer. A method of manufacturing a transfer material, comprising: forming an uneven portion having a shape corresponding to the wiring pattern. 37. After forming the second metal layer and before performing the etching, (a) forming a surface layer of the second metal layer on the second metal layer in a wiring pattern shape; (B) forming a third metal layer by a plating method in an exposed area of the second metal layer, and (c) removing the plating resist. 37. Thereafter, the surface portions of the second metal layer, the release layer, and the first metal layer in a region where the third metal layer is not formed are etched by the chemical etching. 3. The method for producing a transfer material according to item 1. 38. The third metal layer is formed of a metal component that is chemically stable to an etchant used in the chemical etching method, and the third metal layer is used as an etching resist during the chemical etching. 38. The method for producing a transfer material according to claim 37, wherein the method is operated. 39. The method according to claim 38, wherein the third metal layer is formed of gold or silver. 40. After forming the third metal layer and before stripping the plating resist, chemically etch the etchant used in the chemical etching method on the third metal layer. 4th stable metal component
After that, the plating resist is stripped and the chemical etching is performed, and the second metal layer and the stripping layer are formed in a region where the third and fourth metal layers are not formed. 38. The method for manufacturing a transfer material according to claim 37, wherein the surface layer of the first metal layer is etched. 41. The fourth metal layer is formed of a metal component chemically stable to an etchant used in the chemical etching method, and the fourth metal layer is used as an etching resist during the chemical etching. 41. The method for producing a transfer material according to claim 40, wherein the method is operated. 42. The method according to claim 41, wherein the fourth metal layer is formed of gold or silver. 43. The method according to claim 36, wherein the second metal layer is formed by an electrolytic plating method. 44. The method according to claim 36, wherein the first metal layer and the second metal layer are made of the same metal component. 45. A depth at which a surface portion of the first metal layer is etched by the chemical etching method is 1 to 1
The method for producing a transfer material according to any one of claims 36 to 44, wherein the thickness is in a range of 2 µm. 46. The method for producing a transfer material according to claim 36, further comprising a step of roughening the surface of the second metal layer. 47. The surface of the second metal layer subjected to the surface roughening treatment has a center line average roughness of 2 μm or more.
7. The method for producing a transfer material according to item 6. 48. The method for manufacturing a transfer material according to claim 36, wherein a circuit component is formed by a printing method so as to be in contact with said second metal layer. 49. The method according to claim 48, wherein the printing method is screen printing. 50. The circuit component according to claim 48, wherein the circuit component is formed of a material containing an inorganic filler and a resin composition.
10. The method for producing a transfer material according to item 9. 51. The method according to claim 48, wherein the circuit component is formed of a material containing an inorganic filler, an organic binder, and a plasticizer. 52. Forming a second metal layer in a wiring pattern shape on the first metal layer, and forming a circuit component by printing so as to be electrically connected to the second metal layer. A method for producing a transfer material, characterized in that: 53. The method according to claim 52, wherein the circuit component is formed by screen printing. 54. The method according to claim 52, wherein the second metal layer is formed by a plating method. 55. A release layer and a second metal layer on the first metal layer.
Forming a metal layer, processing the second metal layer and the release layer into a wiring pattern shape, and forming a circuit component by printing so as to be electrically connected to the second metal layer. And a method of manufacturing a transfer material. 56. The method according to claim 55, wherein the circuit component is formed by screen printing. 57. At the same time that the second metal layer and the release layer are processed into a wiring pattern shape by a chemical etching method, the projections correspond to the surface pattern portion of the first metal layer and the wiring pattern shape. 55. A concave / convex portion is formed.
Or a method for producing a transfer material according to 56. 58. After forming the second metal layer and before performing the etching, (a) forming a surface layer of the second metal layer on the second metal layer in a wiring pattern shape; (B) forming a third metal layer by a plating method in an exposed area of the second metal layer, and (c) removing the plating resist. 58. Then, the surface portions of the second metal layer, the release layer, and the first metal layer in a region where the third metal layer is not formed are etched by the chemical etching. 3. The method for producing a transfer material according to item 1. 59. The third metal layer is formed of a metal component that is chemically stable to an etchant used in the chemical etching method, and the third metal layer is used as an etching resist during the chemical etching. 59. The method for producing a transfer material according to claim 58, wherein the method is operated. 60. The method according to claim 59, wherein the third metal layer is formed of gold or silver. 61. After forming the third metal layer and before stripping the plating resist, chemically etch the etchant used in the chemical etching method on the third metal layer. 4th stable metal component
After that, the plating resist is stripped and the chemical etching is performed, and the second metal layer and the stripping layer are formed in a region where the third and fourth metal layers are not formed. 59. The method for producing a transfer material according to claim 58, wherein the surface layer of the first metal layer is etched. 62. The fourth metal layer is formed of a metal component that is chemically stable to an etchant used in the chemical etching method, and the fourth metal layer is used as an etching resist during the chemical etching. 62. The method for producing a transfer material according to claim 61, wherein the method is operated. 63. The method according to claim 62, wherein the fourth metal layer is formed of gold or silver. 64. The method according to claim 57, wherein the second metal layer is formed by an electrolytic plating method. 65. The method according to claim 57, wherein the first metal layer and the second metal layer are made of the same metal component. 66. A depth at which a surface portion of the first metal layer is etched by the chemical etching method is 1 to 1
The method for producing a transfer material according to any one of claims 57 to 65, wherein the thickness is in a range of 2 µm. 67. The method according to claim 57, further comprising a step of roughening the surface of the second metal layer. 68. The surface of the second metal layer subjected to the surface roughening treatment has a center line average roughness of 2 μm or more.
8. The method for producing a transfer material according to item 7. 69. An electric insulating substrate, comprising: a wiring pattern formed on at least one main surface of the electric insulating substrate by a transfer method using the transfer material according to any one of claims 1 to 21. A wiring board, wherein the wiring pattern is formed in a recess formed in the main surface. 70. The wiring according to claim 69, wherein the electrically insulating substrate has a through hole filled with a conductive composition, and the wiring pattern is electrically connected to the conductive composition. substrate. 71. The wiring substrate according to claim 69, wherein the depth of the concave portion is in a range of 1 to 12 μm. 72. The wiring substrate according to claim 69, wherein the electrically insulating substrate includes an inorganic filler and a thermosetting resin composition, and has a through hole filled with a conductive composition. . 73. The inorganic filler is made of Al ₂ O ₃ , Mg
At least one inorganic filler selected from the group consisting of O, BN, AlN and SiO ₂ , wherein the proportion of the inorganic filler is 70 to 95% by weight, and the proportion of the thermosetting resin composition is 5 to 30% 73. The wiring board according to claim 72, which is in terms of% by weight. 74. The electric insulating substrate, wherein at least one reinforcing material selected from the group consisting of a woven fabric of glass fiber, a nonwoven fabric of glass fiber, a woven fabric of heat-resistant organic fiber, and a nonwoven fabric of heat-resistant organic fiber, The wiring board according to any one of claims 69 to 71, comprising a material impregnated with a thermosetting resin composition. 75. The wiring substrate according to claim 69, wherein said electrically insulating substrate is made of ceramic. 76. The method according to claim 76, wherein the ceramic is Al ₂ O ₃ , MgO, ZrO ₂ , T
_{iO 2, SiO 2, BeO,} BN, at least one component selected from the group consisting of CaO and glass, or a wiring board according to claim 75 is a ceramic comprising Bi-Ca-Nb-O. 77. The wiring substrate according to claim 69, further comprising a metal layer formed by a plating method on the wiring pattern formed in the concave portion of the main surface by the transfer method. . 78. A semiconductor device connected to a wiring pattern formed in a concave portion of the main surface, wherein the semiconductor device is flip-chip bonded with its bumps aligned with the concave portion. 78. The wiring board according to any one of the above items. 79. A multilayer wiring board having an inner via hole structure formed by stacking a plurality of wiring boards, wherein at least one of the multilayer wiring boards is provided with the wiring board according to any one of claims 69 to 78. Multilayer wiring board. 80. At least one of the plurality of wiring boards is a ceramic wiring board having an electrically insulating substrate containing ceramic, and at least one of the ceramic wiring boards has a convex shape on at least one of its main surfaces. A composite wiring board having an electrically insulating substrate containing a thermosetting resin composition, wherein the wiring substrate has a formed wiring pattern, and is laminated on a main surface on which the convex wiring pattern is formed; 80. The wiring board according to claim 79, wherein a convex wiring pattern is embedded in a main surface of the composite wiring board. 81. The wiring board according to claim 80, wherein the sintering temperature of the ceramic wiring board is 1050 ° C. or higher. 82. At least two of the plurality of wiring boards are ceramic wiring boards having an electrically insulating substrate containing ceramic, and at least one of the ceramic wiring boards is a ceramic different from other ceramic wiring boards. 80. The wiring board according to claim 79, wherein a wiring board having an electrically insulating substrate containing a thermosetting resin composition is disposed between ceramic wiring boards containing materials and ceramic materials different from each other. 83. A composite wiring board having at least an uppermost layer and a lowermost layer of the plurality of wiring boards having an electrically insulating substrate containing a thermosetting resin composition, wherein the inner layer contains an electrically insulating substrate containing ceramic. 80. The wiring board according to claim 79, comprising a ceramic wiring board having the same. 84. An electrically insulative substrate;
A wiring pattern and a circuit component formed on at least one main surface of the electrically insulating substrate by a transfer method using the transfer material according to any one of the above, wherein the circuit component is electrically connected to the wiring pattern. A wiring board, wherein the circuit component and the wiring pattern are embedded in the main surface. 85. The wiring according to claim 84, wherein the electrically insulating substrate has a through hole filled with a conductive composition, and the wiring pattern is electrically connected to the conductive composition. substrate. 86. The wiring substrate according to claim 84, wherein the electrically insulating substrate includes an inorganic filler and a thermosetting resin composition, and has a through hole filled with a conductive composition. 87. The method according to claim 87, wherein the inorganic filler is Al ₂ O ₃ , Mg
At least one inorganic filler selected from the group consisting of O, BN, AlN and SiO ₂ , wherein the proportion of the inorganic filler is 70 to 95% by weight, and the proportion of the thermosetting resin composition is 5 to 30% 89. The wiring board according to claim 86, wherein the amount is by weight. 88. The electric insulating substrate, wherein at least one reinforcing member selected from the group consisting of glass fiber woven fabric, glass fiber nonwoven fabric, heat-resistant organic fiber woven fabric, and heat-resistant organic fiber nonwoven fabric, The wiring board according to claim 84 or 85, comprising a material impregnated with a thermosetting resin composition. 89. The wiring board according to claim 84, wherein the electrically insulating substrate is made of a ceramic material. 90. The method according to claim 90, wherein the ceramic material is Al ₂ O ₃ , M
gO, ZrO ₂ , TiO ₂ , SiO ₂ , BeO, BN, C
90. The wiring board according to claim 89, wherein the wiring board is at least one ceramic selected from the group consisting of aO and glass, or ceramic containing Bi-Ca-Nb-O. 91. A multilayer wiring board having an inner via hole structure formed by laminating a plurality of wiring boards, wherein at least one of the multilayer wiring boards is provided with the wiring board according to any one of claims 84 to 90. . 92. At least one of the plurality of wiring boards is a ceramic wiring board having an electrically insulating substrate containing ceramic, and at least one of the ceramic wiring boards has a convex shape on at least one of its main surfaces. A composite wiring substrate having an electrically insulating substrate containing a thermosetting resin composition, wherein the wiring substrate has a formed wiring pattern, and is laminated on a main surface on which the convex wiring pattern is formed; 92. The wiring board according to claim 91, wherein a convex wiring pattern is embedded in a main surface of the composite wiring board. 93. The wiring board according to claim 92, wherein the sintering temperature of the ceramic wiring board is 1050 ° C. or higher. 94. At least two of the plurality of wiring boards are ceramic wiring boards having an electrically insulating substrate containing ceramic, and at least one of the ceramic wiring boards is a ceramic different from other ceramic wiring boards. 92. The wiring board according to claim 91, wherein a wiring board having an electrically insulating substrate containing a thermosetting resin composition is disposed between ceramic wiring boards containing materials and ceramic materials different from each other. 95. At least the uppermost layer and the lowermost layer of the plurality of wiring boards are a composite wiring board having an electrically insulating substrate containing a thermosetting resin composition, and the inner layer contains an electrically insulating substrate containing ceramic. 92. The wiring board according to claim 91, further comprising a ceramic wiring board having the same. 96. A method of manufacturing a wiring board using the transfer material according to any one of claims 1 to 21, wherein a wiring pattern metal layer including at least a second metal layer in the transfer material is formed. Side is pressed against at least one main surface of the uncured sheet-like base material, and the first metal layer bonded to the second metal layer by the release layer is removed from the second metal layer. A method for manufacturing a wiring board, wherein the wiring pattern metal layer is transferred to the sheet-like substrate by peeling. 97. A laminate is formed by laminating two or more sheets of the sheet-like base material to which the wiring pattern metal layer has been transferred in the uncured state, and forming the sheet-like base of all layers of the laminate. The method for manufacturing a wiring board according to claim 96, wherein the material is cured at once. 98. The method for producing a wiring board according to claim 96, wherein the sheet-like substrate includes an inorganic filler and a thermosetting resin composition, and has a through hole filled with a conductive composition. . 99. The method according to claim 99, wherein the inorganic filler is Al ₂ O ₃ , Mg.
At least one inorganic filler selected from the group consisting of O, BN, AlN and SiO ₂ , wherein the ratio of the inorganic filler to the entire sheet-like base material is 70 to 95% by weight, and the thermosetting resin composition The method for producing a wiring board according to claim 98, wherein a ratio of the object to the entire sheet-like substrate is 5 to 30% by weight. 100. The sheet-like base material is at least one sheet-like reinforcing material selected from the group consisting of glass fiber woven fabric, glass fiber non-woven fabric, heat-resistant organic fiber woven fabric, and heat-resistant organic fiber non-woven fabric. The method for manufacturing a wiring board according to claim 96 or 97, wherein the wiring board is impregnated with a thermosetting resin composition. 101. The method for manufacturing a wiring board according to claim 96, wherein said sheet-like base material contains polyimide. 102. The sheet-like base material comprises an organic binder, a plasticizer, Al ₂ O ₃ , MgO, ZrO ₂ , TiO ₂ ,
The method for producing a wiring board according to claim 96 or 97, wherein the ceramic sheet comprises a ceramic sheet containing at least one ceramic selected from the group consisting of SiO ₂ , BeO, BN, CaO, and glass. 103. The transfer of the wiring pattern metal layer using the transfer material is performed on both main surfaces of the ceramic sheet, and substantially on both surfaces or one surface of the ceramic sheet at a sintering temperature of the ceramic sheet. 103. A constraining sheet mainly composed of an inorganic composition that does not substantially shrink and shrink, and the ceramic sheet is fired together with the constraining sheet, and after firing, the constraining sheet is removed to obtain a ceramic wiring board. 3. The method for manufacturing a wiring board according to claim 1. A composite wiring board is obtained by transferring the wiring pattern metal layer using the transfer material to at least one principal surface of a sheet-like base material containing a thermosetting resin composition. Stacking the ceramic wiring board and the composite wiring board, and press-bonding while heating to obtain a multilayer wiring board;
A method for manufacturing the wiring board according to claim 103. 105. Before transferring the wiring pattern metal layer to the ceramic sheet using the transfer material,
105. The method of manufacturing a wiring board according to claim 103, wherein a through-hole is formed, and the conductive composition is filled in the through-hole. 106. A through-hole formed in a ceramic sheet, and a constraint mainly composed of an inorganic composition which does not substantially shrink at the firing temperature of the ceramic sheet on both sides of the ceramic sheet having the through-hole formed therein. Arranging a sheet, firing the ceramic sheet together with the constraint sheet, removing the constraint sheet after firing, filling the through hole with a thermosetting conductive composition, and obtaining a ceramic substrate with a via conductor An uncured sheet-like base material containing a thermosetting resin composition on a side of the transfer material according to any one of claims 1 to 21 on which a wiring pattern metal layer including at least a second metal layer is formed. Pressure-bonding to at least one main surface of the first metal layer, and separating the first metal layer bonded to the second metal layer by the release layer from the second metal layer. Transferring the wiring pattern metal layer to the sheet-like substrate; forming a through hole in the sheet-like substrate containing the thermosetting resin composition before or after the transfer; Filling the curable conductive composition to obtain a composite wiring board with a via conductor, laminating the ceramic substrate and the composite wiring board, and press-bonding while heating to obtain a multilayer wiring board. A method for manufacturing a wiring board, which is characterized by 107. The through-hole according to claim 105, wherein when forming the through-hole in the ceramic sheet, a through-hole for an alignment pin in laminating the ceramic substrate and the composite wiring substrate is also formed at the same time. The method for manufacturing the wiring board according to the above. 108. The method of manufacturing a wiring board according to claim 107, wherein a hole diameter of said through hole is formed 2 to 10% larger than said pin diameter. 109. The method according to claim 96, wherein after the transfer of the wiring pattern metal layer using the transfer material, plating is performed on the wiring pattern metal layer formed on the surface of the sheet-like base material. 3. The method for manufacturing a wiring board according to claim 1. 110. A method for manufacturing a wiring board using the transfer material according to claim 22, wherein at least a side of the transfer material on which the second metal layer and the circuit component are formed is provided. By press-fitting at least one principal surface of an uncured insulating sheet-like base material and peeling the first metal layer, at least the second metal layer and the circuit are formed on the sheet-like base material. A method for manufacturing a wiring board, comprising transferring a component. 111. The sheet-like base material after the transfer is laminated in two or more layers in the uncured state to form a laminate, and the sheet-like base materials of all the layers of the laminate are collectively formed. The method for manufacturing a wiring board according to claim 110, wherein the wiring board is cured. 112. The method of manufacturing a wiring board according to claim 110, wherein the sheet-shaped base material includes an inorganic filler and a thermosetting resin composition, and has a through hole filled with a conductive composition. . 113. The inorganic filler is made of Al ₂ O ₃ , M
at least one inorganic filler selected from the group consisting of gO, BN, AlN, and SiO ₂ , wherein the ratio of the inorganic filler to the entire sheet-like substrate is 70 to 95% by weight, and the thermosetting resin composition The method for manufacturing a wiring board according to claim 112, wherein a ratio of the object to the entire sheet-like base material is 5 to 30% by weight. 114. The sheet-like base material is at least one sheet-like reinforcing material selected from the group consisting of glass fiber woven fabric, glass fiber non-woven fabric, heat-resistant organic fiber woven fabric, and heat-resistant organic fiber non-woven fabric. The method for manufacturing a wiring board according to claim 110 or 111, wherein the wiring board is impregnated with a thermosetting resin composition. 115. The method of manufacturing a wiring board according to claim 110, wherein said sheet-like base material contains polyimide. 116. The sheet-like base material is composed of an organic binder, a plasticizer, Al ₂ O ₃ , MgO, ZrO ₂ , TiO ₂ ,
The method for manufacturing a wiring board according to claim 110 or 111, wherein the ceramic sheet includes a ceramic sheet containing at least one ceramic selected from the group consisting of SiO ₂ , BeO, BN, CaO, and glass. 117. The transfer of the wiring pattern metal layer using the transfer material is performed on both main surfaces of the ceramic sheet, and substantially on both surfaces or one surface of the ceramic sheet at a sintering temperature of the ceramic sheet. 117. A ceramic wiring board, wherein a constraining sheet mainly composed of an inorganic composition which does not sinter and shrink is disposed, and the ceramic sheet is fired together with the constraining sheet. After firing, the constraining sheet is removed to obtain a ceramic wiring board. 3. The method for manufacturing a wiring board according to claim 1. 118. A composite wiring board is obtained by transferring the wiring pattern metal layer using the transfer material to at least one main surface of a sheet-like base material containing a thermosetting resin composition. Stacking the ceramic wiring board and the composite wiring board, and press-bonding while heating to obtain a multilayer wiring board;
A method for manufacturing the wiring board according to claim 117. 119. Before transferring the wiring pattern metal layer to the ceramic sheet using the transfer material,
119. The method of manufacturing a wiring board according to claim 117, wherein a through hole is formed, and the conductive composition is filled in the through hole. 120. A through-hole formed in a ceramic sheet, and a constraint mainly composed of an inorganic composition that does not substantially shrink at the firing temperature of the ceramic sheet on both sides of the ceramic sheet having the through-hole formed therein. Arranging a sheet, firing the ceramic sheet together with the constraining sheet, removing the constraining sheet after firing, filling the through-hole with a thermosetting conductive composition, and obtaining a ceramic substrate with a via conductor An uncured sheet-like base material containing a thermosetting resin composition on a side of the transfer material according to any one of claims 22 to 35 on which a wiring pattern metal layer including at least a second metal layer is formed. Pressure-bonding to at least one main surface of the first metal layer, and separating the first metal layer bonded to the second metal layer by the release layer from the second metal layer. By transferring the wiring pattern metal layer to the sheet-like base material, before or after the transfer, forming a through-hole in the sheet-like base material containing the thermosetting resin composition, and applying heat to the through-hole. Filling the curable conductive composition to obtain a composite wiring board with a via conductor, laminating the ceramic substrate and the composite wiring board, and press-bonding while heating to obtain a multilayer wiring board. A method for manufacturing a wiring board, which is characterized by the following. 121. The method according to claim 119, wherein when forming a through hole in the ceramic sheet, a through hole for an alignment pin in laminating the ceramic substrate and the composite wiring substrate is also formed at the same time. The method for manufacturing the wiring board according to the above. 122. The method of manufacturing a wiring board according to claim 121, wherein a hole diameter of said through hole is formed larger by 2 to 10% than said pin diameter. 123. A plating process is performed on the wiring pattern metal layer formed on the surface of the sheet-like base material after transferring the wiring pattern metal layer using the transfer material. 3. The method for manufacturing a wiring board according to claim 1.