KR100602222B1 - 개선된 열안정성을 갖는 저유전상수 재료를 제조하기 위한전구체 - Google Patents

개선된 열안정성을 갖는 저유전상수 재료를 제조하기 위한전구체 Download PDF

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KR100602222B1
KR100602222B1 KR1020007004416A KR20007004416A KR100602222B1 KR 100602222 B1 KR100602222 B1 KR 100602222B1 KR 1020007004416 A KR1020007004416 A KR 1020007004416A KR 20007004416 A KR20007004416 A KR 20007004416A KR 100602222 B1 KR100602222 B1 KR 100602222B1
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precursor
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plasma
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KR20010031399A (ko
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리청제이.
왕후이
포지아토지오반니안토니오
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퀘스터 테크놀로지, 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6338—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6924—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Medicinal Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Polymers (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020007004416A 1997-10-24 1998-10-15 개선된 열안정성을 갖는 저유전상수 재료를 제조하기 위한전구체 Expired - Fee Related KR100602222B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/957,481 US6020458A (en) 1997-10-24 1997-10-24 Precursors for making low dielectric constant materials with improved thermal stability
US8/957,481 1997-10-24
US08/957,481 1997-10-24

Publications (2)

Publication Number Publication Date
KR20010031399A KR20010031399A (ko) 2001-04-16
KR100602222B1 true KR100602222B1 (ko) 2006-07-19

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KR1020007004416A Expired - Fee Related KR100602222B1 (ko) 1997-10-24 1998-10-15 개선된 열안정성을 갖는 저유전상수 재료를 제조하기 위한전구체

Country Status (5)

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US (3) US6020458A (https=)
JP (1) JP2001521045A (https=)
KR (1) KR100602222B1 (https=)
AU (1) AU1092099A (https=)
WO (1) WO1999021924A1 (https=)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469761B2 (ja) * 1997-10-30 2003-11-25 東京エレクトロン株式会社 半導体デバイスの製造方法
TW430882B (en) * 1997-11-20 2001-04-21 Tokyo Electron Ltd Plasma film forming method
TWI246633B (en) * 1997-12-12 2006-01-01 Applied Materials Inc Method of pattern etching a low k dielectric layen
US6660656B2 (en) * 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6593247B1 (en) * 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US20010031229A1 (en) * 1998-10-20 2001-10-18 Spjut Reed E. UV-enhanced, in-line, infrared phosphorous diffusion furnace
US6936310B1 (en) * 1999-04-02 2005-08-30 Sharp Kabushiki Kaisha Plasma processing method
US6423384B1 (en) * 1999-06-25 2002-07-23 Applied Materials, Inc. HDP-CVD deposition of low dielectric constant amorphous carbon film
US6475930B1 (en) * 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
EP1123991A3 (en) * 2000-02-08 2002-11-13 Asm Japan K.K. Low dielectric constant materials and processes
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
JP2001267310A (ja) * 2000-03-17 2001-09-28 Tokyo Electron Ltd プラズマ成膜方法及びその装置
US6596343B1 (en) * 2000-04-21 2003-07-22 Applied Materials, Inc. Method and apparatus for processing semiconductor substrates with hydroxyl radicals
JP2002009152A (ja) * 2000-06-21 2002-01-11 Nec Corp 半導体装置及びその製造方法
US6559052B2 (en) 2000-07-07 2003-05-06 Applied Materials, Inc. Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
JP2002075980A (ja) * 2000-08-30 2002-03-15 Miyazaki Oki Electric Co Ltd 真空紫外光ｃｖｄによる低誘電体膜の製造方法
KR100797385B1 (ko) * 2000-10-19 2008-01-24 로베르트 보쉬 게엠베하 유도 결합 플라즈마를 이용한 기판의 에칭 장치 및 방법
US6436822B1 (en) * 2000-11-20 2002-08-20 Intel Corporation Method for making a carbon doped oxide dielectric material
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
US6572925B2 (en) * 2001-02-23 2003-06-03 Lsi Logic Corporation Process for forming a low dielectric constant fluorine and carbon containing silicon oxide dielectric material
US6649219B2 (en) 2001-02-23 2003-11-18 Lsi Logic Corporation Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation
US6858195B2 (en) * 2001-02-23 2005-02-22 Lsi Logic Corporation Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material
US20040055539A1 (en) * 2002-09-13 2004-03-25 Dielectric Systems, Inc. Reactive-reactor for generation of gaseous intermediates
US6825303B2 (en) * 2001-02-26 2004-11-30 Dielectric Systems, Inc. Integration of low ε thin films and Ta into Cu dual damascene
US7026052B2 (en) 2001-02-26 2006-04-11 Dielectric Systems, Inc. Porous low k(<2.0) thin film derived from homo-transport-polymerization
US6797343B2 (en) 2001-12-20 2004-09-28 Dielectric Systems, Inc. Dielectric thin films from fluorinated precursors
US7192645B2 (en) 2001-02-26 2007-03-20 Dielectric Systems, Inc. Porous low E (<2.0) thin films by transport co-polymerization
US6881447B2 (en) 2002-04-04 2005-04-19 Dielectric Systems, Inc. Chemically and electrically stabilized polymer films
US20030196680A1 (en) * 2002-04-19 2003-10-23 Dielectric Systems, Inc Process modules for transport polymerization of low epsilon thin films
US20040255862A1 (en) * 2001-02-26 2004-12-23 Lee Chung J. Reactor for producing reactive intermediates for low dielectric constant polymer thin films
US6777171B2 (en) 2001-04-20 2004-08-17 Applied Materials, Inc. Fluorine-containing layers for damascene structures
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
EP1390421A1 (en) * 2001-05-23 2004-02-25 NKT Research &amp; Innovation A/S Method of plasma polymerisation of substituted benzenes, polymeric material obtainable by the method, and use thereof
US6605549B2 (en) 2001-09-29 2003-08-12 Intel Corporation Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
EP1448807A4 (en) * 2001-10-30 2005-07-13 Massachusetts Inst Technology FLUORO CARBON ORGANOSILICIUM COPOLYMERS AND COATINGS MADE ACCORDING TO THE HFCVD PROCEDURE
AU2003201488A1 (en) 2002-01-08 2003-07-24 Silecs, Inc. Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
TWI236505B (en) * 2002-01-14 2005-07-21 Nat Science Council Thermal cracking chemical vapor deposition process for nanocarbonaceous material
US6541397B1 (en) * 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
EP1354640A1 (de) * 2002-04-19 2003-10-22 Dürr Systems GmbH Verfahren und Vorrichtung zum Härten einer Beschichtung
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
DE10237787A1 (de) * 2002-08-17 2004-03-04 Robert Bosch Gmbh Schichtsystem mit einer Siliziumschicht und einer Passivierschicht, Verfahren zur Erzeugung einer Passivierschicht auf einer Siliziumschicht und deren Verwendung
US7404990B2 (en) 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
TWI240959B (en) 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US8865271B2 (en) * 2003-06-06 2014-10-21 Neophotonics Corporation High rate deposition for the formation of high quality optical coatings
EP1670049A4 (en) * 2003-09-17 2008-06-04 Tokyo Electron Ltd PREPARATION OF A LOW DIELECTRICITY CONSTANT INSULATION FILM
US7138180B2 (en) * 2003-10-16 2006-11-21 Wisconsin Alumni Research Foundation Hard carbon films formed from plasma treated polymer surfaces
US7094661B2 (en) 2004-03-31 2006-08-22 Dielectric Systems, Inc. Single and dual damascene techniques utilizing composite polymer dielectric film
US6962871B2 (en) 2004-03-31 2005-11-08 Dielectric Systems, Inc. Composite polymer dielectric film
US7309395B2 (en) 2004-03-31 2007-12-18 Dielectric Systems, Inc. System for forming composite polymer dielectric film
US20050245693A1 (en) * 2004-05-03 2005-11-03 Bhatt Sanjiv M Fluorinated aromatic polymers
US20060201426A1 (en) * 2004-05-25 2006-09-14 Lee Chung J Reactor for Producing Reactive Intermediates for Transport Polymerization
DE102005003806B3 (de) * 2005-01-26 2006-07-20 Thermo Electron (Bremen) Gmbh Glimmentladungsquelle
US20070299176A1 (en) * 2005-01-28 2007-12-27 Markley Thomas J Photodefinable low dielectric constant material and method for making and using same
US7867779B2 (en) 2005-02-03 2011-01-11 Air Products And Chemicals, Inc. System and method comprising same for measurement and/or analysis of particles in gas stream
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
US7425350B2 (en) * 2005-04-29 2008-09-16 Asm Japan K.K. Apparatus, precursors and deposition methods for silicon-containing materials
US7749863B1 (en) * 2005-05-12 2010-07-06 Hrl Laboratories, Llc Thermal management substrates
US20060274474A1 (en) * 2005-06-01 2006-12-07 Lee Chung J Substrate Holder
US7549905B2 (en) 2005-09-30 2009-06-23 International Display Systems, Inc. Method of encapsulating an organic light emitting device
US8945684B2 (en) * 2005-11-04 2015-02-03 Essilor International (Compagnie Generale D'optique) Process for coating an article with an anti-fouling surface coating by vacuum evaporation
US7621794B2 (en) 2005-11-09 2009-11-24 International Display Systems, Inc. Method of encapsulating an organic light-emitting device
US20070264842A1 (en) * 2006-05-12 2007-11-15 Samsung Electronics Co., Ltd. Insulation film deposition method for a semiconductor device
US20070299239A1 (en) * 2006-06-27 2007-12-27 Air Products And Chemicals, Inc. Curing Dielectric Films Under A Reducing Atmosphere
US20080012074A1 (en) * 2006-07-14 2008-01-17 Air Products And Chemicals, Inc. Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors
US7514375B1 (en) * 2006-08-08 2009-04-07 Novellus Systems, Inc. Pulsed bias having high pulse frequency for filling gaps with dielectric material
US20080254233A1 (en) * 2007-04-10 2008-10-16 Kwangduk Douglas Lee Plasma-induced charge damage control for plasma enhanced chemical vapor deposition processes
US20080264672A1 (en) * 2007-04-26 2008-10-30 Air Products And Chemicals, Inc. Photoimprintable Low Dielectric Constant Material and Method for Making and Using Same
US8987039B2 (en) 2007-10-12 2015-03-24 Air Products And Chemicals, Inc. Antireflective coatings for photovoltaic applications
US20090096106A1 (en) * 2007-10-12 2009-04-16 Air Products And Chemicals, Inc. Antireflective coatings
WO2009146744A1 (de) * 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
US9711373B2 (en) * 2008-09-22 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a gate dielectric for high-k metal gate devices
JP5501807B2 (ja) * 2009-03-31 2014-05-28 東京エレクトロン株式会社 処理装置
TWI423331B (zh) * 2009-06-26 2014-01-11 東京威力科創股份有限公司 電漿處理方法
FR2950080B1 (fr) * 2009-09-17 2012-03-02 Essilor Int Procede et dispositif de depot chimique en phase gazeuse d'un film polymere sur un substrat
US9184028B2 (en) * 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
CN103105736A (zh) * 2011-11-11 2013-05-15 中芯国际集成电路制造(上海)有限公司 光刻方法、刻蚀方法
US9093265B2 (en) * 2013-10-15 2015-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. High UV curing efficiency for low-k dielectrics
CN109354903B (zh) * 2018-10-24 2020-01-17 江苏菲沃泰纳米科技有限公司 一种高透明低色差纳米涂层及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184572B1 (en) * 1998-04-29 2001-02-06 Novellus Systems, Inc. Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3274267A (en) 1963-09-23 1966-09-20 Union Carbide Corp Cyclic alpha-perfluoro-di-p-xylylenes
US3332891A (en) 1963-09-23 1967-07-25 Union Carbide Corp Process for the preparation of alpha-per-fluoro-p-xylylene polymers
US3440277A (en) * 1965-12-13 1969-04-22 Us Air Force Fluoroaromatic compounds
US3342754A (en) 1966-02-18 1967-09-19 Union Carbide Corp Para-xylylene polymers
US4291244A (en) * 1979-09-04 1981-09-22 Union Carbide Corporation Electrets
US4737379A (en) 1982-09-24 1988-04-12 Energy Conversion Devices, Inc. Plasma deposited coatings, and low temperature plasma method of making same
DE3240303C1 (de) 1982-10-30 1984-01-19 Merck Patent Gmbh, 6100 Darmstadt Verfahren zur Herstellung von [2,2]-Paracyclophan
JPS601846A (ja) 1983-06-18 1985-01-08 Toshiba Corp 多層配線構造の半導体装置とその製造方法
US5714029A (en) * 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
JPS60231442A (ja) * 1984-04-28 1985-11-18 Toyota Central Res & Dev Lab Inc 撥水処理硝子の製造方法
US4657777A (en) * 1984-12-17 1987-04-14 Canon Kabushiki Kaisha Formation of deposited film
US4911992A (en) 1986-12-04 1990-03-27 Dow Corning Corporation Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides
US5139813A (en) * 1990-09-28 1992-08-18 Union Carbide Chemicals & Plastics Technology Corporation Method for inducing fluorescence in parylene films by an active plasma
US5230929A (en) * 1992-07-20 1993-07-27 Dow Corning Corporation Plasma-activated chemical vapor deposition of fluoridated cyclic siloxanes
US5210341A (en) * 1991-12-20 1993-05-11 Union Carbide Chemicals & Plastics Technology Corporation Processes for the preparation of octafluoro-[2,2]paracyclophane
US5324813A (en) * 1992-07-22 1994-06-28 International Business Machines Corporation Low dielectric constant fluorinated polymers and methods of fabrication thereof
US5268202A (en) * 1992-10-09 1993-12-07 Rensselaer Polytechnic Institute Vapor deposition of parylene-F using 1,4-bis (trifluoromethyl) benzene
US5424097A (en) * 1993-09-30 1995-06-13 Specialty Coating Systems, Inc. Continuous vapor deposition apparatus
JP3407086B2 (ja) 1994-06-17 2003-05-19 日本テキサス・インスツルメンツ株式会社 半導体装置の製造方法
AU5674096A (en) 1995-05-05 1996-11-21 Specialty Coating Systems, Inc. Flat panel display with parylene barrier and protective film s
US5708116A (en) * 1995-05-31 1998-01-13 The United States Of America As Represented By The Secretary Of The Navy Low dielectric constant allylics
US5536892A (en) * 1995-10-18 1996-07-16 Specialty Coating Systems, Inc. Processes for the preparation of octafluoro-[2,2]paracyclophane
JP3932206B2 (ja) * 1995-10-18 2007-06-20 スペシャルティ、コーティング、システムズ、インコーポレイテッド オクタフルオロ−〔２，２〕パラシクロファンの製造方法
EP0769788A3 (en) * 1995-10-20 1998-01-14 W.L. Gore & Associates, Inc. Low dielectric constant material for use as an insulation element in an electronic device
TW297147B (en) * 1995-10-27 1997-02-01 Specialty Coating Systems Inc Multi-level circuit structure including fluorinated parylene polymer dielectric interlayers
US5536317A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a quartz crystal thickness/rate controller
US5538758A (en) * 1995-10-27 1996-07-23 Specialty Coating Systems, Inc. Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers
US5534068A (en) * 1995-10-27 1996-07-09 Specialty Coating Systems, Inc. Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement
US5556473A (en) * 1995-10-27 1996-09-17 Specialty Coating Systems, Inc. Parylene deposition apparatus including dry vacuum pump system and downstream cold trap
US5536322A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a heated and cooled support platen and an electrostatic clamping device
US5536321A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including a post-pyrolysis filtering chamber and a deposition chamber inlet filter
US5536319A (en) * 1995-10-27 1996-07-16 Specialty Coating Systems, Inc. Parylene deposition apparatus including an atmospheric shroud and inert gas source
EP0862664B1 (en) * 1995-10-27 2003-01-02 Specialty Coating Systems, Inc. Method and apparatus for the deposition of parylene af4 onto semiconductor wafers
US6284933B1 (en) * 1996-10-23 2001-09-04 William R. Dolbier, Jr. TFPX synthesis
JP2002505803A (ja) 1996-10-25 2002-02-19 スペシャルティ、コーティング、システムズ、インコーポレイテッド パリレンコーティングの製造方法
US5783614A (en) * 1997-02-21 1998-07-21 Copytele, Inc. Polymeric-coated dielectric particles and formulation and method for preparing same
US5841005A (en) * 1997-03-14 1998-11-24 Dolbier, Jr.; William R. Parylene AF4 synthesis
US5759906A (en) 1997-04-11 1998-06-02 Industrial Technology Research Institute Planarization method for intermetal dielectrics between multilevel interconnections on integrated circuits
US6051321A (en) * 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
TW522144B (en) * 1998-01-20 2003-03-01 Nippon Catalytic Chem Ind Process for production of 1,4-bis(difluoroalkyl) benzene derivative
EP1123991A3 (en) * 2000-02-08 2002-11-13 Asm Japan K.K. Low dielectric constant materials and processes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184572B1 (en) * 1998-04-29 2001-02-06 Novellus Systems, Inc. Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices

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