KR100580749B1 - 이온 주입기 빔라인 구성 부품용 석영 절연체 - Google Patents

이온 주입기 빔라인 구성 부품용 석영 절연체 Download PDF

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Publication number
KR100580749B1
KR100580749B1 KR1020000077679A KR20000077679A KR100580749B1 KR 100580749 B1 KR100580749 B1 KR 100580749B1 KR 1020000077679 A KR1020000077679 A KR 1020000077679A KR 20000077679 A KR20000077679 A KR 20000077679A KR 100580749 B1 KR100580749 B1 KR 100580749B1
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KR
South Korea
Prior art keywords
electrodes
pair
housing
electrode
ion implanter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020000077679A
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English (en)
Korean (ko)
Other versions
KR20010067400A (ko
Inventor
사다트맨드쿠어로쉬
스웬선데이비드리챠드
디버질리오윌리암프랭크
퀸스티븐마이클
완지민
벤베니스트빅터모리아크
Original Assignee
액셀리스 테크놀로지스, 인크.
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Publication date
Application filed by 액셀리스 테크놀로지스, 인크. filed Critical 액셀리스 테크놀로지스, 인크.
Publication of KR20010067400A publication Critical patent/KR20010067400A/ko
Application granted granted Critical
Publication of KR100580749B1 publication Critical patent/KR100580749B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/038—Insulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H01J2237/04737—Changing particle velocity accelerating with electrostatic means radio-frequency quadrupole [RFQ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020000077679A 1999-12-21 2000-12-18 이온 주입기 빔라인 구성 부품용 석영 절연체 Expired - Fee Related KR100580749B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09469068 1999-12-21
US09/469,068 US6291828B1 (en) 1999-12-21 1999-12-21 Glass-like insulator for electrically isolating electrodes from ion implanter housing

Publications (2)

Publication Number Publication Date
KR20010067400A KR20010067400A (ko) 2001-07-12
KR100580749B1 true KR100580749B1 (ko) 2006-05-15

Family

ID=23862290

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000077679A Expired - Fee Related KR100580749B1 (ko) 1999-12-21 2000-12-18 이온 주입기 빔라인 구성 부품용 석영 절연체

Country Status (6)

Country Link
US (1) US6291828B1 (https=)
EP (1) EP1111652A1 (https=)
JP (1) JP2001222970A (https=)
KR (1) KR100580749B1 (https=)
SG (1) SG88808A1 (https=)
TW (1) TW525203B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630677B1 (en) * 2001-08-29 2003-10-07 Advanced Micro Devices, Inc. Electrostatic lens having glassy graphite electrodes
US6949895B2 (en) * 2003-09-03 2005-09-27 Axcelis Technologies, Inc. Unipolar electrostatic quadrupole lens and switching methods for charged beam transport
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
JP6831245B2 (ja) * 2017-01-06 2021-02-17 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
CN109256314B (zh) * 2018-10-11 2020-08-28 中国电子科技集团公司第四十八研究所 一种基片的定点离子注入装置及注入方法
CN109767969A (zh) * 2019-03-08 2019-05-17 无锡诚承电子科技有限公司 离子注入机高压绝缘件及制造方法
US11476087B2 (en) * 2020-08-03 2022-10-18 Applied Materials, Inc. Ion implantation system and linear accelerator having novel accelerator stage configuration
US11388810B2 (en) * 2020-09-17 2022-07-12 Applied Materials, Inc. System, apparatus and method for multi-frequency resonator operation in linear accelerator
US11596051B2 (en) * 2020-12-01 2023-02-28 Applied Materials, Inc. Resonator, linear accelerator configuration and ion implantation system having toroidal resonator
US11665810B2 (en) * 2020-12-04 2023-05-30 Applied Materials, Inc. Modular linear accelerator assembly
JP7557397B2 (ja) * 2021-03-02 2024-09-27 住友重機械イオンテクノロジー株式会社 イオン注入装置および静電四重極レンズ装置
US11825590B2 (en) * 2021-09-13 2023-11-21 Applied Materials, Inc. Drift tube, apparatus and ion implanter having variable focus electrode in linear accelerator

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5894745A (ja) * 1981-11-30 1983-06-06 Agency Of Ind Science & Technol 多重極レンズ
EP0163745B1 (en) * 1983-11-28 1989-03-29 Hitachi, Ltd. Quadrupole particle accelerator
EP0217616A3 (en) * 1985-09-23 1989-01-25 Vg Instruments Group Limited Substrate processing apparatus
EP0217676B1 (en) * 1985-10-04 1993-09-01 Fujitsu Limited Cooling system for electronic circuit device
US4885500A (en) * 1986-11-19 1989-12-05 Hewlett-Packard Company Quartz quadrupole for mass filter
IL81145A (en) * 1987-01-02 1990-08-31 Univ Ramot Device for transfer of micro-organism sample to culture medium
US4831270A (en) 1987-05-21 1989-05-16 Ion Implant Services Ion implantation apparatus
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus
US5796219A (en) 1988-07-15 1998-08-18 Shimadzu Corp Method and apparatus for controlling the acceleration energy of a radio-frequency multipole linear accelerator
JPH061678B2 (ja) 1988-11-24 1994-01-05 工業技術院長 外部共振回路型ｒｆｑ加速器
GB9110207D0 (en) * 1991-05-10 1991-07-03 Fisons Plc Process for the manufacture of a multipolar elongate-electrode lens or mass filter
JP2863962B2 (ja) * 1992-04-10 1999-03-03 株式会社日立製作所 イオン打ち込み装置
JPH05334979A (ja) * 1992-06-01 1993-12-17 Agency Of Ind Science & Technol 荷電ビーム用レンズ構体
JPH06196296A (ja) * 1992-12-24 1994-07-15 Tokyo Seimitsu Co Ltd 加速管
JPH0773041B2 (ja) * 1993-03-02 1995-08-02 株式会社日立製作所 イオン注入装置
US5693939A (en) 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
AU4812097A (en) * 1996-10-09 1998-05-05 Symyx Technologies, Inc. Infrared spectroscopy and imaging of libraries
JP3402998B2 (ja) * 1997-03-18 2003-05-06 株式会社東芝 荷電ビーム描画装置用静電偏向電極の製造方法
US5780863A (en) * 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
US6023060A (en) * 1998-03-03 2000-02-08 Etec Systems, Inc. T-shaped electron-beam microcolumn as a general purpose scanning electron microscope
US6506287B1 (en) * 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
JPH11288800A (ja) * 1998-04-01 1999-10-19 Nissin High Voltage Co Ltd 加速管

Also Published As

Publication number Publication date
KR20010067400A (ko) 2001-07-12
US6291828B1 (en) 2001-09-18
SG88808A1 (en) 2002-05-21
EP1111652A1 (en) 2001-06-27
JP2001222970A (ja) 2001-08-17
TW525203B (en) 2003-03-21

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