JP2001222970A - イオン注入装置用の電極アセンブリおよび静電四極レンズアセンブリ - Google Patents

イオン注入装置用の電極アセンブリおよび静電四極レンズアセンブリ

Info

Publication number
JP2001222970A
JP2001222970A JP2000387423A JP2000387423A JP2001222970A JP 2001222970 A JP2001222970 A JP 2001222970A JP 2000387423 A JP2000387423 A JP 2000387423A JP 2000387423 A JP2000387423 A JP 2000387423A JP 2001222970 A JP2001222970 A JP 2001222970A
Authority
JP
Japan
Prior art keywords
assembly
electrode
electrodes
housing
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000387423A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001222970A5 (https=
Inventor
Kourosh Saadatmand
サダトマン コーローシュ
David Richard Swenson
リチャード スベンソン デイビッド
William Frank Divergilio
フランク ディベルジリオ ウイリアム
Stephen Michael Quinn
マイケル クイン ステファン
Zhimin Wan
ワン ズィーミン
Victor M Benveniste
マウリス ベンベニステ ビクター
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of JP2001222970A publication Critical patent/JP2001222970A/ja
Publication of JP2001222970A5 publication Critical patent/JP2001222970A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H01J2237/038—Insulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H01J2237/04737—Changing particle velocity accelerating with electrostatic means radio-frequency quadrupole [RFQ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2000387423A 1999-12-21 2000-12-20 イオン注入装置用の電極アセンブリおよび静電四極レンズアセンブリ Pending JP2001222970A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/469,068 US6291828B1 (en) 1999-12-21 1999-12-21 Glass-like insulator for electrically isolating electrodes from ion implanter housing
US469068 1999-12-21

Publications (2)

Publication Number Publication Date
JP2001222970A true JP2001222970A (ja) 2001-08-17
JP2001222970A5 JP2001222970A5 (https=) 2008-02-07

Family

ID=23862290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000387423A Pending JP2001222970A (ja) 1999-12-21 2000-12-20 イオン注入装置用の電極アセンブリおよび静電四極レンズアセンブリ

Country Status (6)

Country Link
US (1) US6291828B1 (https=)
EP (1) EP1111652A1 (https=)
JP (1) JP2001222970A (https=)
KR (1) KR100580749B1 (https=)
SG (1) SG88808A1 (https=)
TW (1) TW525203B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018110088A (ja) * 2017-01-06 2018-07-12 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
CN109256314A (zh) * 2018-10-11 2019-01-22 中国电子科技集团公司第四十八研究所 一种基片的定点离子注入装置及注入方法
KR20220124094A (ko) * 2021-03-02 2022-09-13 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 이온주입장치 및 정전사중극렌즈장치

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630677B1 (en) * 2001-08-29 2003-10-07 Advanced Micro Devices, Inc. Electrostatic lens having glassy graphite electrodes
US6949895B2 (en) * 2003-09-03 2005-09-27 Axcelis Technologies, Inc. Unipolar electrostatic quadrupole lens and switching methods for charged beam transport
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
CN109767969A (zh) * 2019-03-08 2019-05-17 无锡诚承电子科技有限公司 离子注入机高压绝缘件及制造方法
US11476087B2 (en) * 2020-08-03 2022-10-18 Applied Materials, Inc. Ion implantation system and linear accelerator having novel accelerator stage configuration
US11388810B2 (en) * 2020-09-17 2022-07-12 Applied Materials, Inc. System, apparatus and method for multi-frequency resonator operation in linear accelerator
US11596051B2 (en) * 2020-12-01 2023-02-28 Applied Materials, Inc. Resonator, linear accelerator configuration and ion implantation system having toroidal resonator
US11665810B2 (en) * 2020-12-04 2023-05-30 Applied Materials, Inc. Modular linear accelerator assembly
US11825590B2 (en) * 2021-09-13 2023-11-21 Applied Materials, Inc. Drift tube, apparatus and ion implanter having variable focus electrode in linear accelerator

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6331895B2 (https=) * 1981-11-30 1988-06-27 Kogyo Gijutsu Incho
JPH05287525A (ja) * 1992-04-10 1993-11-02 Hitachi Ltd イオン打ち込み装置
JPH05334979A (ja) * 1992-06-01 1993-12-17 Agency Of Ind Science & Technol 荷電ビーム用レンズ構体
JPH06260132A (ja) * 1993-03-02 1994-09-16 Hitachi Ltd イオン注入装置
JPH10261376A (ja) * 1997-03-18 1998-09-29 Toshiba Corp 荷電ビーム描画装置用静電偏向電極の製造方法
JPH10312770A (ja) * 1997-04-29 1998-11-24 Eaton Corp 静電３極レンズ、イオン注入装置及びイオンビームの集束方法
JPH11288800A (ja) * 1998-04-01 1999-10-19 Nissin High Voltage Co Ltd 加速管
JP2002507661A (ja) * 1998-03-16 2002-03-12 アプライド マテリアルズ インコーポレイテッド 重複端部を有するコイルを備えるスパッタリング装置

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
EP0163745B1 (en) * 1983-11-28 1989-03-29 Hitachi, Ltd. Quadrupole particle accelerator
EP0217616A3 (en) * 1985-09-23 1989-01-25 Vg Instruments Group Limited Substrate processing apparatus
EP0217676B1 (en) * 1985-10-04 1993-09-01 Fujitsu Limited Cooling system for electronic circuit device
US4885500A (en) * 1986-11-19 1989-12-05 Hewlett-Packard Company Quartz quadrupole for mass filter
IL81145A (en) * 1987-01-02 1990-08-31 Univ Ramot Device for transfer of micro-organism sample to culture medium
US4831270A (en) 1987-05-21 1989-05-16 Ion Implant Services Ion implantation apparatus
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus
US5796219A (en) 1988-07-15 1998-08-18 Shimadzu Corp Method and apparatus for controlling the acceleration energy of a radio-frequency multipole linear accelerator
JPH061678B2 (ja) 1988-11-24 1994-01-05 工業技術院長 外部共振回路型ｒｆｑ加速器
GB9110207D0 (en) * 1991-05-10 1991-07-03 Fisons Plc Process for the manufacture of a multipolar elongate-electrode lens or mass filter
JPH06196296A (ja) * 1992-12-24 1994-07-15 Tokyo Seimitsu Co Ltd 加速管
US5693939A (en) 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
AU4812097A (en) * 1996-10-09 1998-05-05 Symyx Technologies, Inc. Infrared spectroscopy and imaging of libraries
US6023060A (en) * 1998-03-03 2000-02-08 Etec Systems, Inc. T-shaped electron-beam microcolumn as a general purpose scanning electron microscope

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6331895B2 (https=) * 1981-11-30 1988-06-27 Kogyo Gijutsu Incho
JPH05287525A (ja) * 1992-04-10 1993-11-02 Hitachi Ltd イオン打ち込み装置
JPH05334979A (ja) * 1992-06-01 1993-12-17 Agency Of Ind Science & Technol 荷電ビーム用レンズ構体
JPH06260132A (ja) * 1993-03-02 1994-09-16 Hitachi Ltd イオン注入装置
JPH10261376A (ja) * 1997-03-18 1998-09-29 Toshiba Corp 荷電ビーム描画装置用静電偏向電極の製造方法
JPH10312770A (ja) * 1997-04-29 1998-11-24 Eaton Corp 静電３極レンズ、イオン注入装置及びイオンビームの集束方法
JP2002507661A (ja) * 1998-03-16 2002-03-12 アプライド マテリアルズ インコーポレイテッド 重複端部を有するコイルを備えるスパッタリング装置
JPH11288800A (ja) * 1998-04-01 1999-10-19 Nissin High Voltage Co Ltd 加速管

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018110088A (ja) * 2017-01-06 2018-07-12 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
CN109256314A (zh) * 2018-10-11 2019-01-22 中国电子科技集团公司第四十八研究所 一种基片的定点离子注入装置及注入方法
KR20220124094A (ko) * 2021-03-02 2022-09-13 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 이온주입장치 및 정전사중극렌즈장치
JP2022133882A (ja) * 2021-03-02 2022-09-14 住友重機械イオンテクノロジー株式会社 イオン注入装置および静電四重極レンズ装置
JP7557397B2 (ja) 2021-03-02 2024-09-27 住友重機械イオンテクノロジー株式会社 イオン注入装置および静電四重極レンズ装置
KR102921376B1 (ko) 2021-03-02 2026-02-02 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 이온주입장치 및 정전사중극렌즈장치

Also Published As

Publication number Publication date
KR20010067400A (ko) 2001-07-12
US6291828B1 (en) 2001-09-18
SG88808A1 (en) 2002-05-21
EP1111652A1 (en) 2001-06-27
KR100580749B1 (ko) 2006-05-15
TW525203B (en) 2003-03-21

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