KR100577754B1 - 전자빔 리소그라피 장치 및 방법 - Google Patents

전자빔 리소그라피 장치 및 방법 Download PDF

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Publication number
KR100577754B1
KR100577754B1 KR1020010054187A KR20010054187A KR100577754B1 KR 100577754 B1 KR100577754 B1 KR 100577754B1 KR 1020010054187 A KR1020010054187 A KR 1020010054187A KR 20010054187 A KR20010054187 A KR 20010054187A KR 100577754 B1 KR100577754 B1 KR 100577754B1
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KR
South Korea
Prior art keywords
electron beam
projection
spherical aberration
electron
projection column
Prior art date
Application number
KR1020010054187A
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English (en)
Korean (ko)
Other versions
KR20020018981A (ko
Inventor
캐찹빅터
문로에릭
로우즈존에이.
와스키에위키즈워렌케이.
주시에킹
Original Assignee
에이저 가디언 시스템즈, 인코포레이티드
이리스, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이저 가디언 시스템즈, 인코포레이티드, 이리스, 엘엘씨 filed Critical 에이저 가디언 시스템즈, 인코포레이티드
Publication of KR20020018981A publication Critical patent/KR20020018981A/ko
Application granted granted Critical
Publication of KR100577754B1 publication Critical patent/KR100577754B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020010054187A 2000-09-04 2001-09-04 전자빔 리소그라피 장치 및 방법 KR100577754B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00307641A EP1184891B1 (en) 2000-09-04 2000-09-04 Electron beam lithography
EP00307641.1 2000-09-04

Publications (2)

Publication Number Publication Date
KR20020018981A KR20020018981A (ko) 2002-03-09
KR100577754B1 true KR100577754B1 (ko) 2006-05-10

Family

ID=8173243

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010054187A KR100577754B1 (ko) 2000-09-04 2001-09-04 전자빔 리소그라피 장치 및 방법

Country Status (6)

Country Link
US (2) US6440620B1 (zh)
EP (1) EP1184891B1 (zh)
JP (1) JP4677571B2 (zh)
KR (1) KR100577754B1 (zh)
DE (1) DE60040664D1 (zh)
TW (1) TW574720B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050048412A1 (en) * 2003-08-28 2005-03-03 Pary Baluswamy Methods for reducing spherical aberration effects in photolithography
US7489828B2 (en) * 2003-10-03 2009-02-10 Media Cybernetics, Inc. Methods, system, and program product for the detection and correction of spherical aberration
KR20070101204A (ko) * 2004-08-24 2007-10-16 셀라 세미컨덕터 엔지니어링 라보라토리스 리미티드 워크피스를 밀링하기 위해 이온빔을 가하고 다수회편향시키고, 그 정도를 결정 및 제어하기 위한 방법, 장치및 시스템
DE102004048892A1 (de) * 2004-10-06 2006-04-20 Leica Microsystems Lithography Gmbh Beleuchtungssystem für eine Korpuskularstrahleinrichtung und Verfahren zur Beleuchtung mit einem Korpuskularstrahl
US20060209410A1 (en) * 2005-03-18 2006-09-21 Smith Adlai H Method and apparatus for compensation or amelioration of lens field curvature and other imaging defects by utilizing a multi-wavelength setting illumination source
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
US8217352B2 (en) * 2009-09-11 2012-07-10 Lawrence Livermore National Security, Llc Ponderomotive phase plate for transmission electron microscopes
US8541755B1 (en) * 2012-05-09 2013-09-24 Jeol Ltd. Electron microscope
US10354206B2 (en) * 2014-10-02 2019-07-16 Airbnb, Inc. Determining host preferences for accommodation listings
US10248974B2 (en) * 2016-06-24 2019-04-02 International Business Machines Corporation Assessing probability of winning an in-flight deal for different price points

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61240553A (ja) * 1985-04-18 1986-10-25 Jeol Ltd イオンビ−ム描画装置
US5079112A (en) * 1989-08-07 1992-01-07 At&T Bell Laboratories Device manufacture involving lithographic processing
JPH06139983A (ja) * 1992-10-28 1994-05-20 Nikon Corp 荷電粒子線装置
JPH0934103A (ja) * 1995-05-17 1997-02-07 Nikon Corp 荷電粒子線転写用マスク
JPH1070059A (ja) * 1996-08-26 1998-03-10 Nikon Corp 荷電粒子線転写装置
JPH1154076A (ja) * 1997-07-31 1999-02-26 Seiko Instr Inc 走査型電子顕微鏡用対物レンズ
JPH1167642A (ja) * 1997-08-21 1999-03-09 Nikon Corp 荷電粒子線投影方法および荷電粒子線投影装置
JPH11176737A (ja) * 1997-12-10 1999-07-02 Nikon Corp 荷電ビーム露光装置
US6069363A (en) * 1998-02-26 2000-05-30 International Business Machines Corporation Magnetic-electrostatic symmetric doublet projection lens

Also Published As

Publication number Publication date
EP1184891A1 (en) 2002-03-06
US6620565B2 (en) 2003-09-16
EP1184891B1 (en) 2008-10-29
JP2002141281A (ja) 2002-05-17
US6440620B1 (en) 2002-08-27
TW574720B (en) 2004-02-01
JP4677571B2 (ja) 2011-04-27
DE60040664D1 (de) 2008-12-11
US20030022077A1 (en) 2003-01-30
KR20020018981A (ko) 2002-03-09

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