KR100574713B1 - 고체 자기 소자 및 고체 자기 소자 어레이 - Google Patents
고체 자기 소자 및 고체 자기 소자 어레이 Download PDFInfo
- Publication number
- KR100574713B1 KR100574713B1 KR1020030019538A KR20030019538A KR100574713B1 KR 100574713 B1 KR100574713 B1 KR 100574713B1 KR 1020030019538 A KR1020030019538 A KR 1020030019538A KR 20030019538 A KR20030019538 A KR 20030019538A KR 100574713 B1 KR100574713 B1 KR 100574713B1
- Authority
- KR
- South Korea
- Prior art keywords
- magnetic
- recording
- ferromagnetic material
- magnetization
- solid
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00096345 | 2002-03-29 | ||
JP2002096345 | 2002-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030078766A KR20030078766A (ko) | 2003-10-08 |
KR100574713B1 true KR100574713B1 (ko) | 2006-04-28 |
Family
ID=27800561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030019538A KR100574713B1 (ko) | 2002-03-29 | 2003-03-28 | 고체 자기 소자 및 고체 자기 소자 어레이 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6906949B1 (zh) |
EP (1) | EP1349184B1 (zh) |
KR (1) | KR100574713B1 (zh) |
CN (1) | CN1254790C (zh) |
DE (1) | DE60300157T2 (zh) |
TW (1) | TW595025B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1349184B1 (en) * | 2002-03-29 | 2004-11-17 | Kabushiki Kaisha Toshiba | Magnetic memory unit and magnetic memory array |
JP2005294376A (ja) * | 2004-03-31 | 2005-10-20 | Toshiba Corp | 磁気記録素子及び磁気メモリ |
US7315041B2 (en) * | 2004-05-21 | 2008-01-01 | The Regents Of The University Of California | Switching devices based on half-metals |
US7369427B2 (en) * | 2004-09-09 | 2008-05-06 | Grandis, Inc. | Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements |
FR2879349B1 (fr) * | 2004-12-15 | 2007-05-11 | Thales Sa | Dispositif a electronique de spin a commande par deplacement de parois induit par un courant de porteurs polarises en spin |
US7061797B1 (en) * | 2004-12-30 | 2006-06-13 | Infineon Technologies Ag | Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell |
US7745893B2 (en) | 2005-10-17 | 2010-06-29 | Northern Lights Semiconductor Corp. | Magnetic transistor structure |
JP4187021B2 (ja) * | 2005-12-02 | 2008-11-26 | ソニー株式会社 | 記憶素子及びメモリ |
EP2118660A4 (en) * | 2007-01-24 | 2011-06-01 | Arrayomics Inc | MICRO-DEVICE SORTING |
US7573736B2 (en) * | 2007-05-22 | 2009-08-11 | Taiwan Semiconductor Manufacturing Company | Spin torque transfer MRAM device |
US7688616B2 (en) * | 2007-06-18 | 2010-03-30 | Taiwan Semicondcutor Manufacturing Company, Ltd. | Device and method of programming a magnetic memory element |
JP2009049264A (ja) * | 2007-08-22 | 2009-03-05 | Toshiba Corp | 磁気記憶素子及び磁気記憶装置 |
JP5455313B2 (ja) * | 2008-02-21 | 2014-03-26 | 株式会社東芝 | 磁気記憶素子及び磁気記憶装置 |
US8102700B2 (en) | 2008-09-30 | 2012-01-24 | Micron Technology, Inc. | Unidirectional spin torque transfer magnetic memory cell structure |
US7876603B2 (en) | 2008-09-30 | 2011-01-25 | Micron Technology, Inc. | Spin current generator for STT-MRAM or other spintronics applications |
US8310861B2 (en) | 2008-09-30 | 2012-11-13 | Micron Technology, Inc. | STT-MRAM cell structure incorporating piezoelectric stress material |
US7944738B2 (en) * | 2008-11-05 | 2011-05-17 | Micron Technology, Inc. | Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling |
US8553449B2 (en) | 2009-01-09 | 2013-10-08 | Micron Technology, Inc. | STT-MRAM cell structures |
US7957182B2 (en) | 2009-01-12 | 2011-06-07 | Micron Technology, Inc. | Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same |
WO2011004891A1 (ja) * | 2009-07-09 | 2011-01-13 | 国立大学法人九州大学 | 磁化反転装置、記憶素子、及び磁界発生装置 |
US9082497B2 (en) | 2011-03-22 | 2015-07-14 | Renesas Electronics Corporation | Magnetic memory using spin orbit interaction |
US8697484B2 (en) | 2011-12-20 | 2014-04-15 | Samsung Electronics Co., Ltd. | Method and system for setting a pinned layer in a magnetic tunneling junction |
US9082494B2 (en) | 2012-01-13 | 2015-07-14 | Micron Technology, Inc. | Memory cells having a common gate terminal |
US9048410B2 (en) | 2013-05-31 | 2015-06-02 | Micron Technology, Inc. | Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls |
JP2018152432A (ja) * | 2017-03-10 | 2018-09-27 | 東芝メモリ株式会社 | 磁気記憶装置 |
CN108500968B (zh) * | 2018-02-26 | 2021-04-30 | 中国矿业大学 | 磁流变液软体机器人的控制方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5695864A (en) * | 1995-09-28 | 1997-12-09 | International Business Machines Corporation | Electronic device using magnetic components |
US6111784A (en) * | 1997-09-18 | 2000-08-29 | Canon Kabushiki Kaisha | Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element |
US6130814A (en) * | 1998-07-28 | 2000-10-10 | International Business Machines Corporation | Current-induced magnetic switching device and memory including the same |
US6259586B1 (en) * | 1999-09-02 | 2001-07-10 | International Business Machines Corporation | Magnetic tunnel junction sensor with AP-coupled free layer |
US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
US6730949B2 (en) * | 2001-03-22 | 2004-05-04 | Kabushiki Kaisha Toshiba | Magnetoresistance effect device |
EP1349184B1 (en) * | 2002-03-29 | 2004-11-17 | Kabushiki Kaisha Toshiba | Magnetic memory unit and magnetic memory array |
-
2003
- 2003-03-28 EP EP03006869A patent/EP1349184B1/en not_active Expired - Lifetime
- 2003-03-28 KR KR1020030019538A patent/KR100574713B1/ko not_active IP Right Cessation
- 2003-03-28 DE DE60300157T patent/DE60300157T2/de not_active Expired - Lifetime
- 2003-03-28 TW TW092107326A patent/TW595025B/zh not_active IP Right Cessation
- 2003-03-28 CN CNB031083854A patent/CN1254790C/zh not_active Expired - Fee Related
- 2003-03-31 US US10/401,865 patent/US6906949B1/en not_active Expired - Fee Related
-
2005
- 2005-05-02 US US11/118,443 patent/US7042762B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1254790C (zh) | 2006-05-03 |
US7042762B2 (en) | 2006-05-09 |
US6906949B1 (en) | 2005-06-14 |
TW595025B (en) | 2004-06-21 |
DE60300157D1 (de) | 2004-12-23 |
EP1349184A1 (en) | 2003-10-01 |
DE60300157T2 (de) | 2005-11-10 |
TW200306026A (en) | 2003-11-01 |
KR20030078766A (ko) | 2003-10-08 |
EP1349184B1 (en) | 2004-11-17 |
CN1448917A (zh) | 2003-10-15 |
US20050190594A1 (en) | 2005-09-01 |
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Legal Events
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120418 Year of fee payment: 7 |
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LAPS | Lapse due to unpaid annual fee |