DE60300157T2 - Magnetische Speichereinheit und magnetische Speichermatrix - Google Patents

Magnetische Speichereinheit und magnetische Speichermatrix Download PDF

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Publication number
DE60300157T2
DE60300157T2 DE60300157T DE60300157T DE60300157T2 DE 60300157 T2 DE60300157 T2 DE 60300157T2 DE 60300157 T DE60300157 T DE 60300157T DE 60300157 T DE60300157 T DE 60300157T DE 60300157 T2 DE60300157 T2 DE 60300157T2
Authority
DE
Germany
Prior art keywords
magnetic
magnetization
current
magnetic recording
ferromagnetic substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60300157T
Other languages
German (de)
English (en)
Other versions
DE60300157D1 (de
Inventor
Shiho Nakamura
Shigeru Haneda
Hiroaki Yoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60300157D1 publication Critical patent/DE60300157D1/de
Application granted granted Critical
Publication of DE60300157T2 publication Critical patent/DE60300157T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
DE60300157T 2002-03-29 2003-03-28 Magnetische Speichereinheit und magnetische Speichermatrix Expired - Lifetime DE60300157T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002096345 2002-03-29
JP2002096345 2002-03-29

Publications (2)

Publication Number Publication Date
DE60300157D1 DE60300157D1 (de) 2004-12-23
DE60300157T2 true DE60300157T2 (de) 2005-11-10

Family

ID=27800561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60300157T Expired - Lifetime DE60300157T2 (de) 2002-03-29 2003-03-28 Magnetische Speichereinheit und magnetische Speichermatrix

Country Status (6)

Country Link
US (2) US6906949B1 (zh)
EP (1) EP1349184B1 (zh)
KR (1) KR100574713B1 (zh)
CN (1) CN1254790C (zh)
DE (1) DE60300157T2 (zh)
TW (1) TW595025B (zh)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1349184B1 (en) * 2002-03-29 2004-11-17 Kabushiki Kaisha Toshiba Magnetic memory unit and magnetic memory array
JP2005294376A (ja) * 2004-03-31 2005-10-20 Toshiba Corp 磁気記録素子及び磁気メモリ
US7315041B2 (en) * 2004-05-21 2008-01-01 The Regents Of The University Of California Switching devices based on half-metals
US7369427B2 (en) * 2004-09-09 2008-05-06 Grandis, Inc. Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
FR2879349B1 (fr) * 2004-12-15 2007-05-11 Thales Sa Dispositif a electronique de spin a commande par deplacement de parois induit par un courant de porteurs polarises en spin
US7061797B1 (en) * 2004-12-30 2006-06-13 Infineon Technologies Ag Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
US7745893B2 (en) 2005-10-17 2010-06-29 Northern Lights Semiconductor Corp. Magnetic transistor structure
JP4187021B2 (ja) * 2005-12-02 2008-11-26 ソニー株式会社 記憶素子及びメモリ
EP2118660A4 (en) * 2007-01-24 2011-06-01 Arrayomics Inc MICRO-DEVICE SORTING
US7573736B2 (en) * 2007-05-22 2009-08-11 Taiwan Semiconductor Manufacturing Company Spin torque transfer MRAM device
US7688616B2 (en) * 2007-06-18 2010-03-30 Taiwan Semicondcutor Manufacturing Company, Ltd. Device and method of programming a magnetic memory element
JP2009049264A (ja) * 2007-08-22 2009-03-05 Toshiba Corp 磁気記憶素子及び磁気記憶装置
JP5455313B2 (ja) * 2008-02-21 2014-03-26 株式会社東芝 磁気記憶素子及び磁気記憶装置
US8102700B2 (en) 2008-09-30 2012-01-24 Micron Technology, Inc. Unidirectional spin torque transfer magnetic memory cell structure
US7876603B2 (en) 2008-09-30 2011-01-25 Micron Technology, Inc. Spin current generator for STT-MRAM or other spintronics applications
US8310861B2 (en) 2008-09-30 2012-11-13 Micron Technology, Inc. STT-MRAM cell structure incorporating piezoelectric stress material
US7944738B2 (en) * 2008-11-05 2011-05-17 Micron Technology, Inc. Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
US8553449B2 (en) 2009-01-09 2013-10-08 Micron Technology, Inc. STT-MRAM cell structures
US7957182B2 (en) 2009-01-12 2011-06-07 Micron Technology, Inc. Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
WO2011004891A1 (ja) * 2009-07-09 2011-01-13 国立大学法人九州大学 磁化反転装置、記憶素子、及び磁界発生装置
US9082497B2 (en) 2011-03-22 2015-07-14 Renesas Electronics Corporation Magnetic memory using spin orbit interaction
US8697484B2 (en) 2011-12-20 2014-04-15 Samsung Electronics Co., Ltd. Method and system for setting a pinned layer in a magnetic tunneling junction
US9082494B2 (en) 2012-01-13 2015-07-14 Micron Technology, Inc. Memory cells having a common gate terminal
US9048410B2 (en) 2013-05-31 2015-06-02 Micron Technology, Inc. Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
JP2018152432A (ja) * 2017-03-10 2018-09-27 東芝メモリ株式会社 磁気記憶装置
CN108500968B (zh) * 2018-02-26 2021-04-30 中国矿业大学 磁流变液软体机器人的控制方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695864A (en) * 1995-09-28 1997-12-09 International Business Machines Corporation Electronic device using magnetic components
US6111784A (en) * 1997-09-18 2000-08-29 Canon Kabushiki Kaisha Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
US6130814A (en) * 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
US6259586B1 (en) * 1999-09-02 2001-07-10 International Business Machines Corporation Magnetic tunnel junction sensor with AP-coupled free layer
US6611405B1 (en) * 1999-09-16 2003-08-26 Kabushiki Kaisha Toshiba Magnetoresistive element and magnetic memory device
US6730949B2 (en) * 2001-03-22 2004-05-04 Kabushiki Kaisha Toshiba Magnetoresistance effect device
EP1349184B1 (en) * 2002-03-29 2004-11-17 Kabushiki Kaisha Toshiba Magnetic memory unit and magnetic memory array

Also Published As

Publication number Publication date
KR100574713B1 (ko) 2006-04-28
CN1254790C (zh) 2006-05-03
US7042762B2 (en) 2006-05-09
US6906949B1 (en) 2005-06-14
TW595025B (en) 2004-06-21
DE60300157D1 (de) 2004-12-23
EP1349184A1 (en) 2003-10-01
TW200306026A (en) 2003-11-01
KR20030078766A (ko) 2003-10-08
EP1349184B1 (en) 2004-11-17
CN1448917A (zh) 2003-10-15
US20050190594A1 (en) 2005-09-01

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