KR100572419B1 - 리소그래피시스템,리소그래피방법,노광장치와그제조방법및기판처리장치와그제조방법 - Google Patents

리소그래피시스템,리소그래피방법,노광장치와그제조방법및기판처리장치와그제조방법 Download PDF

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Publication number
KR100572419B1
KR100572419B1 KR1019980012207A KR19980012207A KR100572419B1 KR 100572419 B1 KR100572419 B1 KR 100572419B1 KR 1019980012207 A KR1019980012207 A KR 1019980012207A KR 19980012207 A KR19980012207 A KR 19980012207A KR 100572419 B1 KR100572419 B1 KR 100572419B1
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KR
South Korea
Prior art keywords
exposure
substrate
chamber
processing
environment
Prior art date
Application number
KR1019980012207A
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English (en)
Korean (ko)
Other versions
KR19980081142A (ko
Inventor
요스케 시라타
Original Assignee
가부시키가이샤 니콘
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Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR19980081142A publication Critical patent/KR19980081142A/ko
Application granted granted Critical
Publication of KR100572419B1 publication Critical patent/KR100572419B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019980012207A 1997-04-07 1998-04-07 리소그래피시스템,리소그래피방법,노광장치와그제조방법및기판처리장치와그제조방법 KR100572419B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-103814 1997-04-07
JP10381497A JP3849822B2 (ja) 1997-04-07 1997-04-07 リソク゛ラフィシステム

Publications (2)

Publication Number Publication Date
KR19980081142A KR19980081142A (ko) 1998-11-25
KR100572419B1 true KR100572419B1 (ko) 2006-06-21

Family

ID=14363885

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980012207A KR100572419B1 (ko) 1997-04-07 1998-04-07 리소그래피시스템,리소그래피방법,노광장치와그제조방법및기판처리장치와그제조방법

Country Status (2)

Country Link
JP (1) JP3849822B2 (ja)
KR (1) KR100572419B1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100359248B1 (ko) * 1999-12-22 2002-11-04 아남반도체 주식회사 레티클 입자 제거용 송풍 장치
JP3590328B2 (ja) * 2000-05-11 2004-11-17 東京エレクトロン株式会社 塗布現像処理方法及び塗布現像処理システム
JP5167572B2 (ja) * 2004-02-04 2013-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP2006024715A (ja) 2004-07-07 2006-01-26 Toshiba Corp リソグラフィー装置およびパターン形成方法
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008124335A (ja) * 2006-11-14 2008-05-29 Shimadzu Corp 結晶化装置
AT517486B1 (de) * 2015-07-29 2022-11-15 Anton Paar Gmbh Verfahren zur Bestimmung der Dichte von Flüssigkeiten

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08107062A (ja) * 1994-09-30 1996-04-23 Tokyo Electron Ltd 塗布膜形成方法
JPH0982626A (ja) * 1995-09-12 1997-03-28 Nikon Corp 投影露光装置
KR19980054334A (ko) * 1996-12-27 1998-09-25 문정환 사진 식각 장치
KR19980057583A (ko) * 1996-12-30 1998-09-25 문정환 반도체 제조장치
KR100386130B1 (ko) * 1996-01-26 2003-08-25 동경 엘렉트론 주식회사 처리 장치 및 처리 시스템과 기판 반송장치 및 기판 반송방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08107062A (ja) * 1994-09-30 1996-04-23 Tokyo Electron Ltd 塗布膜形成方法
JPH0982626A (ja) * 1995-09-12 1997-03-28 Nikon Corp 投影露光装置
KR100386130B1 (ko) * 1996-01-26 2003-08-25 동경 엘렉트론 주식회사 처리 장치 및 처리 시스템과 기판 반송장치 및 기판 반송방법
KR19980054334A (ko) * 1996-12-27 1998-09-25 문정환 사진 식각 장치
KR19980057583A (ko) * 1996-12-30 1998-09-25 문정환 반도체 제조장치

Also Published As

Publication number Publication date
JP3849822B2 (ja) 2006-11-22
KR19980081142A (ko) 1998-11-25
JPH10284405A (ja) 1998-10-23

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