KR100568546B1 - 메모리 시스템, 반도체 메모리 장치, 및 이 시스템과장치의 출력 데이터 스트로우브 신호 발생 방법 - Google Patents

메모리 시스템, 반도체 메모리 장치, 및 이 시스템과장치의 출력 데이터 스트로우브 신호 발생 방법 Download PDF

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KR100568546B1
KR100568546B1 KR1020040083745A KR20040083745A KR100568546B1 KR 100568546 B1 KR100568546 B1 KR 100568546B1 KR 1020040083745 A KR1020040083745 A KR 1020040083745A KR 20040083745 A KR20040083745 A KR 20040083745A KR 100568546 B1 KR100568546 B1 KR 100568546B1
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South Korea
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signal
read
response
preamble
semiconductor memory
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Expired - Fee Related
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KR1020040083745A
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English (en)
Korean (ko)
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박광일
장성진
송호영
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삼성전자주식회사
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Priority to KR1020040083745A priority Critical patent/KR100568546B1/ko
Priority to US11/251,787 priority patent/US7362648B2/en
Priority to DE102005051206A priority patent/DE102005051206B4/de
Priority to JP2005304593A priority patent/JP4860231B2/ja
Priority to CNB2005101138289A priority patent/CN100405327C/zh
Priority to TW094136509A priority patent/TWI291701B/zh
Application granted granted Critical
Publication of KR100568546B1 publication Critical patent/KR100568546B1/ko
Priority to US12/071,347 priority patent/US7733715B2/en
Priority to US12/662,720 priority patent/US8004911B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066—Output synchronization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2254—Calibration

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KR1020040083745A 2004-10-19 2004-10-19 메모리 시스템, 반도체 메모리 장치, 및 이 시스템과장치의 출력 데이터 스트로우브 신호 발생 방법 Expired - Fee Related KR100568546B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020040083745A KR100568546B1 (ko) 2004-10-19 2004-10-19 메모리 시스템, 반도체 메모리 장치, 및 이 시스템과장치의 출력 데이터 스트로우브 신호 발생 방법
DE102005051206A DE102005051206B4 (de) 2004-10-19 2005-10-18 Speichersystem, Halbleiterspeicherbauelement und Abtastsignalerzeugungsverfahren
US11/251,787 US7362648B2 (en) 2004-10-19 2005-10-18 Memory system, memory device, and output data strobe signal generating method
CNB2005101138289A CN100405327C (zh) 2004-10-19 2005-10-19 存储器系统、存储器设备和输出数据选通信号生成方法
JP2005304593A JP4860231B2 (ja) 2004-10-19 2005-10-19 メモリシステム、半導体メモリ装置、及びこのシステムと装置の出力データストローブ信号発生方法
TW094136509A TWI291701B (en) 2004-10-19 2005-10-19 Memory system, memory device, and output data strobe signal generating method
US12/071,347 US7733715B2 (en) 2004-10-19 2008-02-20 Memory system, memory device, and output data strobe signal generating method
US12/662,720 US8004911B2 (en) 2004-10-19 2010-04-29 Memory system, memory device, and output data strobe signal generating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040083745A KR100568546B1 (ko) 2004-10-19 2004-10-19 메모리 시스템, 반도체 메모리 장치, 및 이 시스템과장치의 출력 데이터 스트로우브 신호 발생 방법

Publications (1)

Publication Number Publication Date
KR100568546B1 true KR100568546B1 (ko) 2006-04-07

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KR1020040083745A Expired - Fee Related KR100568546B1 (ko) 2004-10-19 2004-10-19 메모리 시스템, 반도체 메모리 장치, 및 이 시스템과장치의 출력 데이터 스트로우브 신호 발생 방법

Country Status (6)

Country Link
US (3) US7362648B2 (cg-RX-API-DMAC7.html)
JP (1) JP4860231B2 (cg-RX-API-DMAC7.html)
KR (1) KR100568546B1 (cg-RX-API-DMAC7.html)
CN (1) CN100405327C (cg-RX-API-DMAC7.html)
DE (1) DE102005051206B4 (cg-RX-API-DMAC7.html)
TW (1) TWI291701B (cg-RX-API-DMAC7.html)

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US7280417B2 (en) * 2005-04-26 2007-10-09 Micron Technology, Inc. System and method for capturing data signals using a data strobe signal
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KR100805004B1 (ko) * 2006-06-15 2008-02-20 주식회사 하이닉스반도체 조절 가능한 프리앰블 값에 기초하여 데이터 스트로브신호를 발생하는 데이터 스트로브 신호 발생기 및 이를포함하는 반도체 메모리 장치
WO2008079910A2 (en) 2006-12-20 2008-07-03 Rambus Inc. Strobe acquisition and tracking
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KR101529291B1 (ko) 2008-02-27 2015-06-17 삼성전자주식회사 플래시 메모리 장치 및 그것을 포함한 플래시 메모리시스템
KR101040242B1 (ko) 2008-10-13 2011-06-09 주식회사 하이닉스반도체 데이터 스트로브 신호 생성장치 및 이를 이용하는 반도체 메모리 장치
US8250287B1 (en) * 2008-12-31 2012-08-21 Micron Technology, Inc. Enhanced throughput for serial flash memory, including streaming mode operations
US9665507B2 (en) 2010-07-22 2017-05-30 Rambus Inc. Protocol including a command-specified timing reference signal
CN103312302B (zh) * 2013-06-24 2016-02-03 浙江禾川科技股份有限公司 单主站多从站结构的通信系统和多路扫描选通信号发生器
CN109343794B (zh) * 2018-09-12 2021-11-09 杭州晨晓科技股份有限公司 一种存储器的配置方法及配置装置
KR102787562B1 (ko) * 2019-11-21 2025-03-31 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
US11645155B2 (en) * 2021-02-22 2023-05-09 Nxp B.V. Safe-stating a system interconnect within a data processing system
US11816352B2 (en) * 2021-10-22 2023-11-14 Realtek Semiconductor Corporation Electronic device, data strobe gate signal generator circuit and data strobe gate signal generating method
US12223205B2 (en) * 2023-04-13 2025-02-11 Innogrit Technologies Co., Ltd. Systems, methods and devices for reading a memory of a storage device
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Publication number Publication date
US7733715B2 (en) 2010-06-08
US7362648B2 (en) 2008-04-22
DE102005051206B4 (de) 2009-08-27
US20080144406A1 (en) 2008-06-19
TW200625334A (en) 2006-07-16
US20060083081A1 (en) 2006-04-20
US8004911B2 (en) 2011-08-23
TWI291701B (en) 2007-12-21
DE102005051206A1 (de) 2006-04-27
JP2006120307A (ja) 2006-05-11
CN1783028A (zh) 2006-06-07
CN100405327C (zh) 2008-07-23
US20100284231A1 (en) 2010-11-11
JP4860231B2 (ja) 2012-01-25

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