KR100561120B1 - 반응기 가열용 가열 시스템 및 반응기 가열 방법 - Google Patents

반응기 가열용 가열 시스템 및 반응기 가열 방법 Download PDF

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Publication number
KR100561120B1
KR100561120B1 KR1020037013355A KR20037013355A KR100561120B1 KR 100561120 B1 KR100561120 B1 KR 100561120B1 KR 1020037013355 A KR1020037013355 A KR 1020037013355A KR 20037013355 A KR20037013355 A KR 20037013355A KR 100561120 B1 KR100561120 B1 KR 100561120B1
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South Korea
Prior art keywords
reactor
temperature
heating
heating element
deposition
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Expired - Fee Related
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KR1020037013355A
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English (en)
Korean (ko)
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KR20040018352A (ko
Inventor
베른하르트헨리
세이데만토마스
스타트무엘러미카엘
Original Assignee
인피네온 테크놀로지즈 에스시300 게엠베하 운트 코. 카게
에이에스엠엘 유에스, 인코포레이티드
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Application filed by 인피네온 테크놀로지즈 에스시300 게엠베하 운트 코. 카게, 에이에스엠엘 유에스, 인코포레이티드 filed Critical 인피네온 테크놀로지즈 에스시300 게엠베하 운트 코. 카게
Publication of KR20040018352A publication Critical patent/KR20040018352A/ko
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Publication of KR100561120B1 publication Critical patent/KR100561120B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020037013355A 2001-04-12 2002-04-11 반응기 가열용 가열 시스템 및 반응기 가열 방법 Expired - Fee Related KR100561120B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01109164A EP1256973B1 (en) 2001-04-12 2001-04-12 Heating system and method for heating a reactor
EP01109164.2 2001-04-12
PCT/EP2002/004060 WO2002084711A1 (en) 2001-04-12 2002-04-11 Heating system and method for heating an atmospheric reactor

Publications (2)

Publication Number Publication Date
KR20040018352A KR20040018352A (ko) 2004-03-03
KR100561120B1 true KR100561120B1 (ko) 2006-03-15

Family

ID=8177130

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037013355A Expired - Fee Related KR100561120B1 (ko) 2001-04-12 2002-04-11 반응기 가열용 가열 시스템 및 반응기 가열 방법

Country Status (8)

Country Link
US (1) US6802712B2 (https=)
EP (1) EP1256973B1 (https=)
JP (1) JP2004529497A (https=)
KR (1) KR100561120B1 (https=)
CN (1) CN1288713C (https=)
DE (1) DE60108078T2 (https=)
TW (1) TW541576B (https=)
WO (1) WO2002084711A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
FR2847714B1 (fr) 2002-11-27 2005-02-18 Soitec Silicon On Insulator Procede et dispositif de recuit de tranche de semiconducteur
FR2858715B1 (fr) 2003-08-04 2005-12-30 Soitec Silicon On Insulator Procede de detachement de couche de semiconducteur
US8053324B2 (en) * 2007-08-01 2011-11-08 Texas Instruments Incorporated Method of manufacturing a semiconductor device having improved transistor performance
CN102969220A (zh) * 2011-09-02 2013-03-13 上海华虹Nec电子有限公司 使用炉管进行工艺加工的方法
US10741426B2 (en) * 2017-09-27 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for controlling temperature of furnace in semiconductor fabrication process
EP3647459A1 (en) * 2018-10-31 2020-05-06 Petroceramics S.p.A. Method and an assembly by chemical vapor infiltration of porous components
TWI750749B (zh) * 2020-07-28 2021-12-21 華邦電子股份有限公司 化學氣相沉積製程及膜層的形成方法
CN114308947A (zh) * 2020-09-30 2022-04-12 中国科学院微电子研究所 多晶硅生产设备的清洗方法、清洗装置及多晶硅生产设备
CN112941489A (zh) * 2021-01-27 2021-06-11 长鑫存储技术有限公司 薄膜沉积方法以及薄膜沉积装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960001160B1 (ko) * 1987-07-31 1996-01-19 도오교오 에레구토론 가부시끼가이샤 가열로(加熱爐)
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5418885A (en) * 1992-12-29 1995-05-23 North Carolina State University Three-zone rapid thermal processing system utilizing wafer edge heating means
US5775889A (en) * 1994-05-17 1998-07-07 Tokyo Electron Limited Heat treatment process for preventing slips in semiconductor wafers
WO1999059196A1 (en) * 1998-05-11 1999-11-18 Semitool, Inc. Temperature control system for a thermal reactor
US6548378B1 (en) 1998-12-17 2003-04-15 Vishay Semiconductor Itzehoe Gmbh Method of boron doping wafers using a vertical oven system
WO2001061736A1 (fr) * 2000-02-18 2001-08-23 Tokyo Electron Limited Procede de traitement d'une plaquette
US6495805B2 (en) * 2000-06-30 2002-12-17 Tokyo Electron Limited Method of determining set temperature trajectory for heat treatment system
US6572371B1 (en) * 2002-05-06 2003-06-03 Messier-Bugatti Gas preheater and process for controlling distribution of preheated reactive gas in a CVI furnace for densification of porous annular substrates

Also Published As

Publication number Publication date
EP1256973A1 (en) 2002-11-13
US20040157183A1 (en) 2004-08-12
KR20040018352A (ko) 2004-03-03
DE60108078T2 (de) 2005-12-01
EP1256973B1 (en) 2004-12-29
US6802712B2 (en) 2004-10-12
DE60108078D1 (de) 2005-02-03
TW541576B (en) 2003-07-11
JP2004529497A (ja) 2004-09-24
CN1559079A (zh) 2004-12-29
CN1288713C (zh) 2006-12-06
WO2002084711A1 (en) 2002-10-24

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